CN109115358A - A kind of microelectromechanicsystems systems array formula platinum film temperature sensor and preparation method thereof - Google Patents
A kind of microelectromechanicsystems systems array formula platinum film temperature sensor and preparation method thereof Download PDFInfo
- Publication number
- CN109115358A CN109115358A CN201811134462.7A CN201811134462A CN109115358A CN 109115358 A CN109115358 A CN 109115358A CN 201811134462 A CN201811134462 A CN 201811134462A CN 109115358 A CN109115358 A CN 109115358A
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- China
- Prior art keywords
- temperature sensor
- platinum film
- platinum
- film resistor
- kapton
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/18—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer
- G01K7/186—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer using microstructures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0278—Temperature sensors
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Thermistors And Varistors (AREA)
Abstract
The invention discloses a kind of microelectromechanicsystems systems array formula platinum film temperature sensors, including dielectric base, platinum film resistor temperature sensor, Kapton, dielectric base is made of cvd silicon oxide insulating layer in silicon base or aluminium oxide ceramics substrate, platinum film resistor temperature sensor is deposited on dielectric base, platinum film resistor temperature sensor is in array distribution, it is covered on platinum film resistor temperature sensor by Kapton protective layer, there is one layer of titanium coating between platinum film resistor temperature sensor and base insulating layer, titanium coating with a thickness of 10nm ~ 20nm.Also disclose the preparation method of the microelectromechanicsystems systems array formula platinum film temperature sensor.
Description
Technical field
The present invention relates to MEMS platinum film temperature sensors and preparation method thereof.
Background technique
With the rapid development of science and technology, requirements at the higher level are proposed to temperature sensor, resistance temperature sensor because
Its error is small, stability is good, precision is high and becomes the hot spot studied instantly.Diaphragm type resistance temperature sensor not only has generally
The features such as the advantages of resistance temperature sensor, there are also small in size, light-weight, materials to save, at low cost.Platinum is outstanding film
Formula resistance temperature sensor material, because it, with very high inoxidizability, mechanical strength, temperature-coefficient of electrical resistance, is especially being worked as
Under, many instrument and equipments all work in extreme environments, such as high temperature, high pressure, this proposes more the stability of sensor
High requirement.Platinum film temperature sensor has become a hot topic of research by its superior performance, meanwhile, how using simpler
Technique is also industrial significant consideration.
Summary of the invention
A kind of MEMS is provided the technical problem to be solved by the present invention is to overcome the above-mentioned insufficient of the prior art
Array platinum film temperature sensor, not only performance is stable, precision is high, but also is convenient for industrial production.
The present invention also provides a kind of methods for preparing above-mentioned microelectromechanicsystems systems array formula platinum film temperature sensor, make it just
In industrial production.
The present invention solves the above problems used technical solution are as follows: a kind of microelectromechanicsystems systems array formula platinum film temperature passes
Sensor includes dielectric base, platinum film resistor temperature sensor, Kapton, and dielectric base is that silicon base or aluminium oxide are made pottery
Cvd silicon oxide insulating layer is made in porcelain substrate, and platinum film resistor temperature sensor, platinum film electricity are deposited on dielectric base
Hindering temperature sensor is in array distribution, is covered on platinum film resistor temperature sensor by Kapton protective layer.
The platinum film of preferred platinum film resistor temperature sensor is with a thickness of 200nm ~ 500nm.
There are one layer of titanium coating, titanium between further improved platinum film resistor temperature sensor and base insulating layer
Layer with a thickness of 10nm ~ 20nm.
Preferred Kapton protective layer with a thickness of 8 μm ~ 20 μm.
A kind of method preparing above-mentioned microelectromechanicsystems systems array formula platinum film temperature sensor, including following step are also provided
It is rapid:
The first step cleans dielectric base with weak acid, weak base, deionized water respectively；
Second step etches array-like geometric figure using whirl coating photoetching process, using the side of magnetron sputtering on a dielectric base
Formula sputters platinum or titanium/platinum complex metal layer, obtains array-like platinum film using lift-off stripping means or mask etching method
Resistance temperature sensor；
Third step is put into Muffle furnace and is heat-treated, and 650-800 DEG C for the treatment of temperature, time 30min；
4th step gets rid of a strata acid imide on platinum film resistor temperature sensor surface, is put into baking oven and carries out semi-solid preparation processing, with
Photoresist, mask exposure, development are got rid of in Kapton upper surface afterwards, Kapton protection is obtained after all solidstate processing
Layer.
The present invention has the advantages that the platinum film resistor temperature sensor of 1, array distribution is fixed in dielectric base,
Convenient for integrated with signal acquisition process module, convenient for large-scale serial production, Kapton protective layer high temperature resistant, insulating properties
Energy, acid-fast alkali-proof durability performance are good.2, there are one layer of titanium coating, titanium between platinum film resistor temperature sensor and base insulating layer
Alloy connection has stronger structural stability.3, MEMS technique preparation process is simply easy to produce, and magnetron sputtering
Deposit platinum or titanium/platinum complex metal layer, it is ensured that metal layer thickness is controllable, adhesive force is strong etc..
Detailed description of the invention
Fig. 1 is the cross-sectional view of the microelectromechanicsystems systems array formula platinum film temperature sensor in the embodiment of the present invention.
Specific embodiment
With reference to the accompanying drawing, the present invention is further described for embodiment.
As shown in Figure 1, a kind of cross-sectional view of MEMS (MEMS) array platinum film temperature sensor, bottom
Layer substrate 4, on be successively insulating layer of silicon oxide 1, platinum film resistor temperature sensor 3, Kapton protective layer 2.
Substrate 4 is silicon base or aluminium oxide ceramics substrate.
Platinum film resistor temperature sensor 3 is made of the good platinum of high temperatures, and platinum film resistor is arranged in array
Column, can be arc, strip or other shapes.It is temperature sensitive due to the thermal resistance effect of platinum film, measure the change of its resistance
Change, temperature change can be obtained.
There are one layer of titanium coating, the thickness of titanium coating between platinum film resistor temperature sensor 3 and insulating layer of silicon oxide 1
For 10nm ~ 20nm.
The platinum film of platinum film resistor temperature sensor 3 is with a thickness of 200nm ~ 500nm.
Kapton protective layer 2 with a thickness of 8 μm ~ 20 μm, for protect platinum film resistor temperature sensor 3 and dew
The lead electrode of platinum film resistor temperature sensor 3 out.Polyimide high temperature-resistant possesses high insulating property up to 400 DEG C, acidproof resistance to
Alkali solvent resistant, use are safe.
Above-mentioned MEMS array formula platinum film arrangement of temperature sensor can be prepared using following preparation method, be wrapped
Include following steps:
The first step, using existing technique in silicon base 4 cvd silicon oxide insulating layer 1, later respectively with weak acid, weak base, go
Ionized water sufficiently cleans insulating layer of silicon oxide 1；
Second step, the platinum film resistor temperature for etching and being pre-designed on insulating layer of silicon oxide 1 using whirl coating photoetching process
The identical geometric figure of 3 shape of sensor sputters one layer of titanium/platinum complex metal layer, using lift- by the way of magnetron sputtering
Off stripping means obtains the platinum film resistor temperature sensor 3 for being pre-designed geometry, and wherein titanium is as articulamentum,
Platinum metal layer is as sensor；
Third step is put into Muffle furnace and is heat-treated, and 650-800 DEG C for the treatment of temperature, time 30min
4th step gets rid of a strata acid imide on 3 surface of platinum film resistor temperature sensor, is put into baking oven and carries out semi-solid preparation processing,
Photoresist, mask exposure, development are then got rid of again in Kapton upper surface, obtain patterned polyamides after all solidstate processing
Imines thinfilm protective coating 2.
Another preparation method prepares platinum film using mask etching technique substitution lift-off stripping technology in third step
Resistance temperature sensor 3, other steps are identical as above-mentioned steps.
Claims (5)
1. a kind of microelectromechanicsystems systems array formula platinum film temperature sensor, it is characterised in that: the sensor include dielectric base,
Platinum film resistor temperature sensor, Kapton, dielectric base are deposited oxide in silicon base or aluminium oxide ceramics substrate
Silicon insulating layer is made, and platinum film resistor temperature sensor is deposited on dielectric base, and platinum film resistor temperature sensor is in battle array
Column distribution is covered by Kapton protective layer on platinum film resistor temperature sensor.
2. microelectromechanicsystems systems array formula platinum film temperature sensor according to claim 1, it is characterised in that: the platinum is thin
The platinum film of film resistance temperature sensor is with a thickness of 200nm ~ 500nm.
3. microelectromechanicsystems systems array formula platinum film temperature sensor according to claim 1, it is characterised in that: the platinum is thin
Have one layer of titanium coating between film resistance temperature sensor and base insulating layer, titanium coating with a thickness of 10nm ~ 20nm.
4. microelectromechanicsystems systems array formula platinum film temperature sensor according to claim 1, it is characterised in that: the polyamides
Imines thinfilm protective coating with a thickness of 8 μm ~ 20 μm.
5. a kind of method for preparing any one of Claims 1-4 microelectromechanicsystems systems array formula platinum film temperature sensor, feature
It is: preparation method step:
The first step cleans dielectric base with weak acid, weak base, deionized water respectively；
Second step etches array-like geometric figure using whirl coating photoetching process, using the side of magnetron sputtering on a dielectric base
Formula sputters platinum or titanium/platinum complex metal layer, obtains array-like platinum film using lift-off stripping means or mask etching method
Resistance temperature sensor；
Third step is put into Muffle furnace and is heat-treated, and 650-800 DEG C for the treatment of temperature, time 30min；
4th step gets rid of a strata acid imide on platinum film resistor temperature sensor surface, is put into baking oven and carries out semi-solid preparation processing, with
Photoresist, mask exposure, development are got rid of in Kapton upper surface afterwards, Kapton protection is obtained after all solidstate processing
Layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811134462.7A CN109115358A (en) | 2018-09-27 | 2018-09-27 | A kind of microelectromechanicsystems systems array formula platinum film temperature sensor and preparation method thereof |
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| CN201811134462.7A CN109115358A (en) | 2018-09-27 | 2018-09-27 | A kind of microelectromechanicsystems systems array formula platinum film temperature sensor and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113023658A (en) * | 2021-03-04 | 2021-06-25 | 上海迈振电子科技有限公司 | Resonant micro-cantilever chip and preparation method thereof |
| CN115219056A (en) * | 2022-07-18 | 2022-10-21 | 山东大学 | Quick-response and high-temperature-resistant film type temperature sensor and preparation method thereof |
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| CN1796951A (en) * | 2004-12-22 | 2006-07-05 | 中国科学院合肥智能机械研究所 | Flexible array of temperature sensor, and preparation method |
| JP2007027541A (en) * | 2005-07-20 | 2007-02-01 | Tateyama Kagaku Kogyo Kk | Ntc thermistor element and its manufacturing method |
| CN102495119A (en) * | 2011-11-23 | 2012-06-13 | 中国科学院上海微系统与信息技术研究所 | Multi-parameter water quality monitoring integrated microarray electrodes and preparation method |
| CN106959169A (en) * | 2017-04-18 | 2017-07-18 | 上海交通大学 | A kind of Multifunction sensor chip and preparation method thereof |
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2018
- 2018-09-27 CN CN201811134462.7A patent/CN109115358A/en active Pending
Patent Citations (4)
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| CN1796951A (en) * | 2004-12-22 | 2006-07-05 | 中国科学院合肥智能机械研究所 | Flexible array of temperature sensor, and preparation method |
| JP2007027541A (en) * | 2005-07-20 | 2007-02-01 | Tateyama Kagaku Kogyo Kk | Ntc thermistor element and its manufacturing method |
| CN102495119A (en) * | 2011-11-23 | 2012-06-13 | 中国科学院上海微系统与信息技术研究所 | Multi-parameter water quality monitoring integrated microarray electrodes and preparation method |
| CN106959169A (en) * | 2017-04-18 | 2017-07-18 | 上海交通大学 | A kind of Multifunction sensor chip and preparation method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113023658A (en) * | 2021-03-04 | 2021-06-25 | 上海迈振电子科技有限公司 | Resonant micro-cantilever chip and preparation method thereof |
| CN113023658B (en) * | 2021-03-04 | 2024-05-28 | 上海迈振电子科技有限公司 | Resonant micro-cantilever beam chip and preparation method thereof |
| CN115219056A (en) * | 2022-07-18 | 2022-10-21 | 山东大学 | Quick-response and high-temperature-resistant film type temperature sensor and preparation method thereof |
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Application publication date: 20190101 |