CN204129000U - A kind of MEMS gas sensor - Google Patents
A kind of MEMS gas sensor Download PDFInfo
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- CN204129000U CN204129000U CN201420401036.6U CN201420401036U CN204129000U CN 204129000 U CN204129000 U CN 204129000U CN 201420401036 U CN201420401036 U CN 201420401036U CN 204129000 U CN204129000 U CN 204129000U
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Abstract
The utility model relates to gas detection technology field, discloses a kind of MEMS gas sensor, comprises monocrystalline substrate; Porous silicon layer, is formed at the upper surface of monocrystalline substrate and has certain depth, and upper surface and the hole wall surface of porous silicon layer are formed with silica membrane, and porous silicon layer is concordant with the upper surface of described monocrystalline substrate; Lower insulation course, covers the upper surface of porous silicon layer and described monocrystalline substrate; And be arranged at the zone of heating above lower insulation course, upper insulation course and gas sensitization layer.Porous silicon layer of the present utility model can stably support lower insulating layer of thin-film and on other gas sensor elements, avoid the uneven deformation fracture that causes of force acting on transducer and come off at the hot operation zone of heating that insulation course distortion warpage causes at present.Meanwhile, the hole wall surface of described porous silicon layer is covered with silica membrane, can play better heat insulating effect, reduces power consumption, improves detection sensitivity and the serviceable life of gas sensor.
Description
Technical field
The utility model relates to gas detection technology field, is specifically related to a kind of MEMS gas sensor.
Background technology
Atmospheric pollution, the life of air quality and people is closely bound up, and inflammable and explosive property gas is related to commercial production, national defense safety etc. especially, therefore has extremely important effect to the detection of gas.At present to the detection of gas except traditional large-scale checkout equipment is such as based on the gas detecting instrument of mass spectrum, power spectrum and chromatogram, but these instruments due to bulky, price is higher, limits the universal of them and development.Have also been developed the gas sensor that some are small-sized in recent years.In various gas sensor, being most widely used of semiconductor gas sensor.It has low in energy consumption, volume is little, reproducible, highly sensitive, cost is low, be easy to the advantages such as batch production, stable processing technology.The principle of semiconductor gas sensor is the impedance device utilizing metal-oxide film to make, and at a certain temperature, gas molecule causes the change of resistivity with reactive metal oxide on surface, thus realize the detection to gas.Because gas molecule and reactive metal oxide need higher temperature, in order to realize working at a lower temperature, needing under gas-sensitive film, make micro-heating plate and thinking the temperature that gas membrane provides enough.
MEMS (micro electro mechanical system) (MEMS, Micro-Electro-Mechanical System) is the manufacturing technology platform of a kind of advanced person.The technology of MEMS comprises microelectric technique and micro-processing technology two large divisions.The main contents of microelectric technique have: oxide layer growth, photo etched mask make, adulterate (shielding diffusion, ion implantation), film (layer) growth, line making etc. are selected in photoetching.The main contents of micro-processing technology have: the deep structure exposure of silicon face micro Process and silicon bulk micromachining (anisotropic etch, sacrifice layer) technology, wafer bonding techniques, making high aspect ratio structure and galvanoplastics (LIGA) etc.Utilize microelectric technique can manufacture integrated circuit and many sensors.Silicon-based processing techniques is a kind of micro-processing technology grown up on microelectronic processing technique basis, mainly relies on the technologies such as photoetching, diffusion, oxidation, film growth, dry etching, wet etching and evaporation sputtering.
Along with MEMS technology and microelectronic development, volume is little, and low in energy consumption and easy and other materials or combination of devices micro-heated type gas sensor more and more comes into one's own.But use micro-heating plate can bring certain power attenuation.Application number be 201110241625.3 Chinese patent disclose a kind of on a silicon substrate, heating electrode and signal electrode cohabit the silica-based copline low-power consumption micro gas sensor chip in same media plane, it can realize lower temperature work, but it does not arrange thermofin or heat insulation layer, because semiconductor gas sensor working temperature is higher, thermal losses is comparatively large, thus cannot reduce power consumption.
In prior art, for reducing power consumption, realizing structural thermal insulation and generally adopting insulated tank.The structure that the silica-based gas sensor made based on MEMS process technology at present generally adopts is: deposit one deck silicon nitride film layer as lower insulation course at the upper surface of monocrystal silicon substrate, prepare insulated tank at the lower surface of monocrystal silicon substrate.Back side wet-etching technology can be used during preparation insulated tank, also first can go out semi-girder to lower insulator layer etch, more down wet etching go out inverted pyramid formula insulated tank.Two kinds of insulated tank better can prevent scattering and disappearing to reduce power consumption of heat.Process platinum heater strip layer by stripping technology (lift-off) above lower insulation course, by can heat be produced to heater strip energising, form the temperature required for gas sensor work.Platinum heater strip deposit again on the surface one deck silicon nitride layer as on insulation course, last depositing temperature sensitive layer and gas sensitive layer.Such as application number be 201110366861.8 the gas sensor that discloses of Chinese patent and manufacturing process just have employed the technique of insulated tank.But zone of heating and gas sensitization layer only support by the silicon nitride layer of thin film structure after this method etches insulated tank, and this film is only supported by the support substrates of cantilever design at two ends, the insulation course mechanical property of this membrane structure is poor, and easily breaking when device is given a shock or collide causes component failure.In addition, due to the difference of the thermal expansivity of thermofin and heater strip, at high temperature the easy warpage of thermofin makes heater strip easily come off from thermofin, causes component failure equally.Secondly, the insulated tank of cantilever design utilizes the air heat insulation between cantilever, and because space is comparatively large, air flows faster, also can cause heat loss very fast, affect effect of heat insulation.Again, the complicated process of preparation of this kind of insulated tank, requires higher to controlled condition, thus increases difficulty of processing.
To sum up, mainly there is following problem in the heat insulation structural of gas sensor of the prior art:
(1) poor stability, breaks because discontinuity causes device to deform, causes component failure.
(2) effect of heat insulation is poor, and the airspace between insulated tank causes more greatly heat loss very fast, affects effect of heat insulation.
(3) processing technology is complicated, and the complicated process of preparation of insulated tank, preparation time is longer.
Utility model content
In order to solve the problems that in prior art, gas sensor exists, the utility model provides a kind of MEMS gas sensor, adopts hole wall surface to be formed with the porous silicon layer of silica membrane as heat insulation layer, simultaneously as supporting layer, the life-span of gas sensor can be extended, increase sensitivity.
Inventor of the present utility model finds: compared with monocrystalline silicon, the porous structure of porous silicon makes it have good heat-proof quality, can as the thermofin of sensor.Compared with con-ventional insulation groove, the hole of porous silicon is fine and closely woven, effectively can reduce speed air flow, strengthens effect of heat insulation.And porous silicon preparation technology is simple, with low cost, can be etched at silicon substrate by simple electrochemical method, in the short time, form thicker porous silicon layer.Adopt hole silicon as thermofin, because described porous silicon layer is arranged at below described zone of heating, and porous silicon has good heat-proof quality, effectively can reduce described zone of heating heat losses, reduces power consumption.And porous silicon layer is evenly distributed on the upper surface of monocrystalline substrate, stably can support the insulation course on it and other gas sensor assemblies, thus improve the stability of gas sensor, increase its serviceable life.
In addition, silicon dioxide is also a kind of heat-barrier material, and coefficient of heat conductivity is lower than monocrystalline silicon.At upper surface and the hole wall surface covering layer of silicon dioxide film of porous silicon layer, effectively can solve the thermal losses that the porous silicon surface be exposed in air causes, reduce power consumption further, improve the detection sensitivity of gas sensor.
Based on above thinking, the technical scheme that the utility model proposes is: a kind of MEMS gas sensor, comprising: monocrystalline substrate; Porous silicon layer, is formed at the upper surface of described monocrystalline substrate and has certain depth, and upper surface and the hole wall surface of described porous silicon layer are formed with silica membrane, and described porous silicon layer is concordant with the upper surface of described monocrystalline substrate; Lower insulation course, covers the upper surface of described porous silicon layer and described monocrystalline substrate; Zone of heating, be arranged at the upper surface of described lower insulation course, and described zone of heating is positioned at the area just above of described porous silicon layer; Upper insulation course, covers the upper surface of described zone of heating; Gas sensitization layer, is arranged at the upper surface of described upper insulation course, and described gas sensitization layer is positioned at the area just above of described zone of heating.
Described gas sensor also comprises: temperature sensitive, is arranged at the upper surface of described upper insulation course; Gas sensitization layer electrode, be arranged at the upper surface of described upper insulation course, and described gas sensitization layer electrode and described temperature sensitive are positioned at the diverse location of described zone of heating area just above, and described gas sensitization layer covers the upper surface of the described upper insulation course between described gas sensitization layer electrode and two electrodes, thus be communicated with described gas sensitization layer electrode.
Described zone of heating of the present utility model is positioned at the area just above of described porous silicon layer, make described porous silicon layer more stably can support zone of heating, what occur because of effectively not supporting when effectively preventing device to be given a shock collision breaks, and can also effectively avoid gas sensor to come off at the hot operation zone of heating that insulation course distortion warpage causes at present.Meanwhile, described zone of heating is positioned at the area just above of described porous silicon layer, can also ensure sufficient effect of heat insulation.
In order to ensure good effect of heat insulation, the thickness of described porous silicon layer is 20-100 μm, is preferably 50 μm.The effect of heat insulation of porous silicon is directly proportional to porosity, when porosity is 90%, its thermal conductivity can be low to moderate 1w/ (mK), the porosity of porous silicon layer of the present utility model is 50%-90%, be preferably 90%, and described in cover the silica membrane of porous silicon upper surface and hole wall surface thickness be 100-500nm, be preferably 200nm.
Described temperature sensitive of the present utility model and gas sensitive layer and gas sensitization layer electrode are all positioned at the area just above of described zone of heating, thus ensure heating and effect of heat insulation fully.
Silica coating or the thickness of described lower insulation course to be thickness be 100-500nm are the silicon nitride film layer of 100-800nm, and described upper insulation course is identical with described lower insulation course.
Described zone of heating is polysilicon heater strip layer or metal platinum zone of heating.
Described gas sensitization layer is the SnO of 20-300nm
2.
The metal platinum of described temperature sensitive and described gas sensitization layer electrode to be thickness be 150-500nm.
For the ease of zone of heating lead-in wire, described upper insulation course edge of the present utility model has some breach and forms zone of heating lead-in wire window.
Implement the utility model, following beneficial effect can be reached:
(1) porous silicon layer is set on a monocrystaline silicon substrate, because porous silicon layer is uniformly distributed in monocrystalline substrate, uniform force, therefore the lower insulating layer of thin-film on it can stably be supported, thus film-form insulation course breaks and causes gas sensor to lose efficacy when effectively avoiding device to be given a shock or to collide, improve shock resistance and the stability of gas sensor, reduce the requirement to its working environment.In addition, gas sensor effectively can also be avoided to come off at the hot operation zone of heating that insulation course distortion warpage causes at present, thus improve the serviceable life of gas sensor.
(2) hole due to porous silicon is fine and closely woven, and air flowing is therebetween comparatively slow, makes it have good heat-proof quality.Adopt porous silicon layer as thermofin, zone of heating is arranged in the area just above of porous silicon layer, the effect of better insulation can be played, thus increase the detection sensitivity of gas sensor.
(3) at upper surface and the hole wall surface covering layer of silicon dioxide film of porous silicon layer, effectively can solve the higher thermal losses caused of the hole wall thermal conductivity be exposed in air, reduce power consumption further, strengthen effect of heat insulation.
(4) compared with traditional insulated tank, the preparation technology of porous silicon layer is simple, with low cost, more easily controls, thus can improving production efficiency effectively, reduces costs.
(5) etch porous silicon layer on a monocrystaline silicon substrate as thermofin, simultaneously as supporting layer, gas sensor space can be saved, simplify gas sensor one-piece construction.
(6) adopt silica-base material as gas sensor material, make easily through MEMS process technology, processing technology is ripe, and working (machining) efficiency is high.
Accompanying drawing explanation
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only embodiments more of the present utility model, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of MEMS gas sensor of the present utility model;
Fig. 2 is the partial enlargement structural representation of porous silicon layer in MEMS gas sensor of the present utility model;
Fig. 3 is in preparation MEMS gas sensor process of the present utility model, the structural representation after step S1 completes;
Fig. 4 be in preparation MEMS gas sensor job operation of the present utility model step S1 complete after the partial enlargement structural representation of porous silicon layer;
Fig. 5 is in preparation MEMS gas sensor process of the present utility model, the structural representation after step S2 completes;
Fig. 6 is in preparation MEMS gas sensor process of the present utility model, the partial enlargement structural representation of the porous silicon layer after step S2 completes;
Fig. 7 is in preparation MEMS gas sensor process of the present utility model, the structural representation after step S3 completes;
Fig. 8 is in preparation MEMS gas sensor process of the present utility model, the structural representation after step S4 completes;
Fig. 9 is in preparation MEMS gas sensor process of the present utility model, prepares the structural representation after insulation course in step S5;
Figure 10 is in preparation MEMS gas sensor process of the present utility model, prepares the structural representation of temperature sensitive and gas sensitive layer after step S5;
Figure 11 is in preparation MEMS gas sensor process of the present utility model, the structural representation after step S6 completes;
Figure 12 is the structural representation of MEMS gas sensor of the present utility model with the gas sensor of the second adhesive linkage;
Figure 13 is MEMS gas sensor of the present utility model with the structural representation of the gas sensor of the first adhesive linkage and the second adhesive linkage.
Reference numeral in figure corresponds to: 1-monocrystalline substrate, 2-porous silicon layer, 21-silica membrane, insulation course under 3-, 31-first adhesive linkage, 4-zone of heating, the upper insulation course of 5-, 51-second adhesive linkage, 6-zone of heating lead-in wire window, 7-temperature sensitive, 8-gas sensitization layer electrode, 9 gas sensitization layers.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, be clearly and completely described the technical scheme in the utility model embodiment, obviously, described embodiment is only the utility model part embodiment, instead of whole embodiments.Based on the embodiment in the utility model, the every other embodiment that those of ordinary skill in the art obtain under the prerequisite not making creative work, all belongs to the scope of the utility model protection.
Embodiment 1
As shown in Figure 1, 2, the utility model embodiment 1 discloses a kind of MEMS gas sensor, comprising:
Monocrystalline substrate 1; Porous silicon layer 2, be formed at the upper surface of described monocrystalline substrate 1 and there is certain depth, upper surface and the hole wall surface of described porous silicon layer 2 are formed with silica membrane 21, and the upper surface of described porous silicon layer 2 is concordant with the upper surface of described monocrystalline substrate 1; Lower insulation course 3, covers the upper surface of described porous silicon layer 2 and described monocrystalline substrate 1; Zone of heating 4, is arranged at the upper surface of described lower insulation course 3, and described zone of heating 4 is positioned at the area just above of described porous silicon layer 2; Upper insulation course 5, covers the upper surface of described zone of heating 4; Gas sensitization layer 9, is arranged at the upper surface of described upper insulation course 5, and described gas sensitization layer 9 is positioned at the area just above of described zone of heating 4.Described gas sensor also comprises: temperature sensitive 7, is arranged at the upper surface of described upper insulation course 5; Gas sensitization layer electrode 8, be arranged at the upper surface of described upper insulation course 5, and described gas sensitization layer electrode 8 and described temperature sensitive 7 are positioned at the diverse location of described zone of heating 4 area just above, and described gas sensitization layer 9 covers the upper surface of the described upper insulation course 5 between described gas sensitization layer electrode 8 and two electrodes, thus be communicated with described gas sensitization layer electrode 8.
Described zone of heating 4 of the present utility model is positioned at the area just above of described porous silicon layer 2, make described porous silicon layer 2 more stably can support zone of heating, what occur because of effectively not supporting when effectively preventing device to be given a shock collision breaks, and can also effectively avoid gas sensor to come off at the hot operation zone of heating that insulation course distortion warpage causes at present.Meanwhile, described zone of heating 4 is positioned at the area just above of described porous silicon layer 2, can also ensure sufficient effect of heat insulation.
The thickness of described porous silicon layer 2 is 20 μm.The effect of heat insulation of porous silicon is directly proportional to porosity, and when porosity is 90%, its thermal conductivity can be low to moderate 1w/ (mK).The porosity of the described porous silicon layer 2 of the utility model embodiment 1 is 50%, and the thickness of described silica membrane 21 is 100nm.
Because the general conductivity of zone of heating is higher, in order to ensure safety, described monocrystalline substrate 1 and described porous silicon layer 2 arrange lower insulation course 3.Because silicon dioxide has good insulating property, the silicon dioxide of described lower insulation course 3 to be thickness be 100-500nm, is preferably 100nm in the present embodiment.
Optionally, the silicon nitride film layer of described lower insulation course 3 also can be thickness be 100-800nm.
Zone of heating is used for, to gas sensor heating, ensureing that gas sensor can work at a lower temperature.Described zone of heating 4 is the polysilicon heater strip layer of 100-500nm, elects 200nm as in the present embodiment.
Because the general conductivity of zone of heating is higher, in order to ensure safety, described zone of heating 4 arranges insulation course 5.Because silicon dioxide has good insulating property, the silicon dioxide of described upper insulation course 5 to be thickness be 100-500nm, is preferably 100nm in the present embodiment.
Optionally, the silicon nitride film layer of described upper insulation course 5 also can be thickness be 100-800nm.
For the ease of zone of heating lead-in wire, described upper insulation course edge of the present utility model has some breach and forms zone of heating lead-in wire window 6.
Described temperature sensitive 7 is temperature detecting resistance, can obtain the temperature of zone of heating 4 by measuring its resistance.Preferably, described temperature sensitive 7 and described gas sensitization layer electrode 8 are the metal platinum of thickness 150-500nm, are preferably 150nm in the present embodiment.
Optionally, described temperature sensitive 7 and described gas sensitization layer electrode 8 also can be other metallic diaphragms that can realize above-mentioned functions.
Optionally, more firmly be connected on described upper insulation course 5 to make described temperature sensitive 7 and described gas sensitization layer electrode 8, described temperature sensitive 7 and described gas sensitization layer electrode 8 and described on the second adhesive linkage 51 is set between insulation course 5, be preferably titanium adhesive linkage, thickness is preferably 50nm, as shown in figure 12.
To react with it change of the resistivity caused by measuring the surface of gas molecule to be measured at described gas sensitization layer 9, realizing the detection to gas.Preferably, described gas sensitization layer 9 is the SnO of 20-300nm
2, in the present embodiment, elect 20nm as.Described gas sensitization layer 9 covers the surface of the described upper insulation course 5 between described gas sensitization layer electrode 8 and two electrodes, thus is communicated with described gas sensitization layer electrode 8.
Optionally, or described gas sensitization layer 9 can be other gas sensitives.
The MEMS gas sensor preparing the present embodiment comprises the following steps:
S1, prepare porous silicon layer at the upper surface of monocrystalline substrate, as shown in Figure 3,4;
S2, prepare silica membrane 21 at the upper surface of the porous silicon layer prepared and hole wall surface, as shown in Figure 5,6;
S3, have described porous silicon layer 2 monocrystalline substrate 1 upper surface preparation under insulation course 3, as shown in Figure 7;
S4, prepare zone of heating 4 at the upper surface of the lower insulation course 3 prepared, described zone of heating 4 is positioned at the area just above of described porous silicon layer 2, as shown in Figure 8;
S5, on the upper surface and exposed lower insulation course of the zone of heating 4 prepared 3, according to the upper insulation course 5 of method preparation of step S3;
Preferably, for the ease of zone of heating lead-in wire, when the utility model prepares described upper insulation course in step s 5, edge retains some breach and forms zone of heating lead-in wire window 6, as shown in Figure 9.
Preferably, the utility model is at the upper surface preparation temperature sensitive layer 7 of the upper insulation course 5 prepared and gas sensitive layer electrode 8, described gas sensitization layer electrode 8 and described temperature sensitive 7 are positioned at the diverse location of described zone of heating 4 area just above, as shown in Figure 10.
S6, prepare gas sensitization layer 9 at the upper surface of the upper insulation course 5 prepared, described gas sensitization layer 9 is positioned at the area just above of described zone of heating 4, and described gas sensitization layer 9 covers the upper surface of the described upper insulation course between described gas sensitization layer electrode 8 liang of electrodes, thus be communicated with described gas sensitization layer electrode 8, as shown in figure 11.
Optionally, the size of described monocrystalline substrate 1 can be 2 cun, 4 cun or 6 cun.
Preparation process also comprises: before described S1 step, utilizes the solution such as acid solution, organic solvent and deionized water to clean described monocrystalline substrate, then dries up with nitrogen.
The method of the described porous silicon layer 2 of the preparation in described step S1 is electrochemical method, is specially: adopt Zener breakdown to produce hole technique and prepare, corrosive liquid is 1%HF solution, and voltage is 2V.
Optionally, described porous silicon layer 2 also can adopt photochemical corrosion method, etching method or hydrothermal etching to prepare.
The method preparing silica membrane in described step S2 is thermal oxidation process, and the thickness of the described silica membrane prepared is 100nm.Detailed process is: use thermal oxidation technology to anneal the monocrystalline substrate 1 with described porous silicon layer 2, and temperature is 900 degrees Celsius, and the time is 5 hours.
In described step S1, when preparing described porous silicon layer 2, described zone of heating 4 drops in the area just above of described porous silicon layer 2, makes described porous silicon layer 2 can more stably support zone of heating 4, and what occur because of effectively not supporting when effectively preventing device to be given a shock collision breaks.Meanwhile, described zone of heating 4 is positioned at the area just above of described porous silicon layer 2, can also ensure sufficient effect of heat insulation.
The thickness of the described porous silicon layer 2 prepared in described step S1 is 20 μm.The effect of heat insulation of porous silicon is directly proportional to porosity, and when porosity is 90%, its thermal conductivity can be low to moderate 1w/ (mK).The porosity of described porous silicon layer 2 of the present utility model is 50%, and the thickness of described silica membrane 21 is 100nm.
In order to ensure safety, described monocrystalline substrate 1 and described porous silicon layer 2 arrange lower insulation course 3.Because silicon dioxide has good insulating property, insulation course can be used as.In step S3, the method for the lower insulation course 3 of preparation is: magnetron sputtering deposition layer of silicon dioxide in described monocrystalline substrate 1 and described porous silicon layer 2, its thickness is 100-500nm, is preferably 100nm in the present embodiment.
Optionally, the silicon nitride film layer of described lower insulation course 3 also can be thickness be 100-800nm.
The method preparing described zone of heating in described step S4 is: on described lower insulation course, deposit one deck polysilicon, even glue lithographic definition goes out the shape of zone of heating and position as restraining barrier on the polysilicon, utilize ion reaction etching to remove unnecessary polysilicon and obtain polysilicon heater strip layer, the thickness of described polysilicon heater strip layer is 100-500nm, is preferably 200nm in the present embodiment.
In order to ensure safety, described zone of heating 4 arranges insulation course 5.Because silicon dioxide has good insulating property, insulation course can be used as.In step S5, the method for the upper insulation course 5 of preparation is: magnetron sputtering deposition layer of silicon dioxide on described zone of heating 4, and its thickness is 100-500nm, is preferably 100nm in the present embodiment.
Optionally, the silicon nitride film layer of described upper insulation course 5 also can be thickness be 100-800nm.
Optionally, more firmly be connected on described upper insulation course 5 to make described temperature sensitive 7 and described gas sensitization layer electrode 8, after described step S5, also comprise: insulation course 5 prepares the second adhesive linkage 51 on described, preparation method is: on insulation course 5, magnetron sputtering deposition layer of metal titanium forms the second adhesive linkage 51 on described, thickness is preferably 50nm, as shown in figure 12.
Described temperature sensitive 7 is temperature detecting resistance, can obtain the temperature of zone of heating 4 by measuring its resistance.After described step S5, the method for preparation temperature sensitive layer 7 and described gas sensitization layer electrode 8 is: the even glue lithographic definition of upper surface of the second adhesive linkage 51 obtained in above-mentioned steps goes out shape and the position of temperature sensitive and gas sensitive layer electrode, magnetron sputtering deposition layer of metal platinum, adopt stripping technology to remove photoresist, obtain metal platinum temperature detecting resistance and gas sensitization layer electrode.The thickness 150-500nm of described temperature sensitive 7 and described gas sensitization layer electrode 8, is preferably 150nm in the present embodiment.
Optionally, described temperature sensitive 7 and described gas sensitization layer electrode 8 also can for realizing other metallic diaphragms of above-mentioned functions.
To react with it on described gas sensitization layer 9 surface the change of the resistivity caused by measuring gas molecule to be measured, realizing the detection to gas.Described gas sensitization layer 9 covers the surface of the described upper insulation course 5 between described gas sensitization layer electrode 8 and two electrodes, thus is communicated with described gas sensitization layer electrode 8.The method preparing gas sensitization layer 9 in described step S6 is: even glue lithographic definition goes out the position of gas sensitive layer, adopts the mode of magnetron sputtering to sputter layer of metal oxide, adopts stripping technology to remove photoresist and obtains gas sensitization layer 9.Preferably, described metal oxide is the SnO of 20-300nm
2, be preferably 20nm.
Optionally, described metal oxide can be other gas sensitives.
Implement the utility model, following beneficial effect can be reached:
(1) porous silicon layer is set on a monocrystaline silicon substrate, because porous silicon layer is uniformly distributed in monocrystalline substrate, uniform force, therefore the lower insulating layer of thin-film on it can stably be supported, thus film-form insulation course breaks and causes gas sensor to lose efficacy when effectively avoiding device to be given a shock or to collide, improve shock resistance and the stability of gas sensor, reduce the requirement to its working environment.In addition, gas sensor effectively can also be avoided to come off at the hot operation zone of heating that insulation course distortion warpage causes at present, thus improve the serviceable life of gas sensor.
(2) hole due to porous silicon is fine and closely woven, and air flowing is therebetween comparatively slow, makes it have good heat-proof quality.Adopt porous silicon layer as thermofin, zone of heating is arranged in the area just above of porous silicon layer, the effect of better insulation can be played, thus increase the detection sensitivity of gas sensor.
(3) at upper surface and the hole wall surface covering layer of silicon dioxide film of porous silicon layer, effectively can solve the higher thermal losses caused of the hole wall thermal conductivity be exposed in air, reduce power consumption further, strengthen effect of heat insulation.
(4) compared with traditional insulated tank, the preparation technology of porous silicon layer is simple, with low cost, more easily controls, thus can improving production efficiency effectively, reduces costs.
(5) etch porous silicon layer on a monocrystaline silicon substrate as thermofin, simultaneously as supporting layer, gas sensor space can be saved, simplify gas sensor one-piece construction.
(6) adopt silica-base material as gas sensor material, make easily through MEMS process technology, processing technology is ripe, and working (machining) efficiency is high.
Embodiment 2
As shown in Figure 1, 2, the utility model embodiment 2 discloses a kind of MEMS gas sensor, comprising:
Monocrystalline substrate 1; Porous silicon layer 2, be formed at the upper surface of described monocrystalline substrate 1 and there is certain depth, upper surface and the hole wall surface of described porous silicon layer 2 are formed with silica membrane 21, and the upper surface of described porous silicon layer 2 is concordant with the upper surface of described monocrystalline substrate 1; Lower insulation course 3, covers the upper surface of described porous silicon layer 2 and described monocrystalline substrate 1; Zone of heating 4, is arranged at the upper surface of described lower insulation course 3, and described zone of heating 4 is positioned at the area just above of described porous silicon layer 2; Upper insulation course 5, covers the upper surface of described zone of heating 4; Gas sensitization layer 9, is arranged at the upper surface of described upper insulation course 5, and described gas sensitization layer 9 is positioned at the area just above of described zone of heating 4.Described gas sensor also comprises: temperature sensitive 7, is arranged at the upper surface of described upper insulation course 5; Gas sensitization layer electrode 8, be arranged at the upper surface of described upper insulation course 5, and described gas sensitization layer electrode 8 and described temperature sensitive 7 are positioned at the diverse location of described zone of heating 4 area just above, and described gas sensitization layer 9 covers the upper surface of the described upper insulation course 5 between described gas sensitization layer electrode 8 and two electrodes, thus be communicated with described gas sensitization layer electrode 8.
Described zone of heating 4 of the present utility model is positioned at the area just above of described porous silicon layer 2, make described porous silicon layer 2 more stably can support zone of heating, what occur because of effectively not supporting when effectively preventing device to be given a shock collision breaks, and can also effectively avoid gas sensor to come off at the hot operation zone of heating that insulation course distortion warpage causes at present.Meanwhile, described zone of heating 4 is positioned at the area just above of described porous silicon layer 2, can also ensure sufficient effect of heat insulation.
In order to ensure good effect of heat insulation, the thickness of described porous silicon layer 2 is 100 μm.The effect of heat insulation of porous silicon is directly proportional to porosity, and when porosity is 90%, its thermal conductivity can be low to moderate 1w/ (mK).The porosity of described porous silicon layer 2 of the present utility model is 90%, and the thickness of described silica membrane 21 is 500nm.
Because the general conductivity of zone of heating is higher, in order to ensure safety, described monocrystalline substrate 1 and described porous silicon layer 2 arrange lower insulation course 3.Because silicon dioxide has good insulating property, the silicon dioxide of described lower insulation course 3 to be thickness be 100-500nm, elects 500nm as in the present embodiment.
Optionally, the silicon nitride film layer of described lower insulation course 3 also can be thickness be 100-800nm.
Zone of heating is used for, to gas sensor heating, ensureing that gas sensor can work at a lower temperature.Described zone of heating 4 is the metal platinum heater strip layer that 50-200nm is thick, elects 200nm as in the present embodiment.
Optionally, in order to make described zone of heating 4 more firmly be connected on described lower insulation course 3, on the upper surface of described lower insulation course 3, the position corresponding with described zone of heating 4 arranges the first adhesive linkage 31, is preferably titanium adhesive linkage, thickness is preferably 50nm, as shown in figure 13.
Because the general conductivity of zone of heating is higher, in order to ensure safety, described zone of heating 4 arranges insulation course 5.Because silicon dioxide has good insulating property, the silicon dioxide of described upper insulation course 5 to be thickness be 100-500nm, is preferably 500nm in the present embodiment.
Optionally, the silicon nitride film layer of described upper insulation course 5 also can be thickness be 100-800nm.
For the ease of zone of heating lead-in wire, described upper insulation course edge of the present utility model has some breach and forms zone of heating lead-in wire window 6.
Described temperature sensitive 7 is temperature detecting resistance, can obtain the temperature of zone of heating 4 by measuring its resistance.Preferably, described temperature sensitive 7 and described gas sensitization layer electrode 8 are the metal platinum of thickness 150-500nm, are preferably 500nm in the present embodiment.
Optionally, described temperature sensitive 7 and described gas sensitization layer electrode 8 also can be other metallic diaphragms that can realize above-mentioned functions.
Optionally, more firmly be connected on described upper insulation course 5 to make described temperature sensitive 7 and described gas sensitization layer electrode 8, described temperature sensitive 7 and described gas sensitization layer electrode 8 and described on the second adhesive linkage 51 is set between insulation course 5, be preferably titanium adhesive linkage, thickness is preferably 50nm, as shown in figure 13.
To react with it change of the resistivity caused by measuring the surface of gas molecule to be measured at described gas sensitization layer 9, realizing the detection to gas.Preferably, described gas sensitization layer 9 is the SnO of 20-300nm
2, be preferably 300nm.Described gas sensitization layer 9 covers the surface of the described upper insulation course 5 between described gas sensitization layer electrode 8 and two electrodes, thus is communicated with described gas sensitization layer electrode 8.
Optionally, or described gas sensitization layer 9 can be other gas sensitives.
The MEMS gas sensor preparing the present embodiment comprises the following steps:
S1, prepare porous silicon layer at the upper surface of monocrystalline substrate, as shown in Figure 3,4;
S2, prepare silica membrane 21 at the upper surface of the porous silicon layer prepared and hole wall surface, as shown in Figure 5,6;
S3, have described porous silicon layer 2 monocrystalline substrate 1 upper surface preparation under insulation course 3, as shown in Figure 7;
S4, prepare zone of heating 4 at the upper surface of the lower insulation course 3 prepared, described zone of heating 4 is positioned at the area just above of described porous silicon layer 2, as shown in Figure 8;
S5, on the upper surface and exposed lower insulation course of the zone of heating 4 prepared 3, according to the upper insulation course 5 of method preparation of step S3;
Preferably, for the ease of zone of heating lead-in wire, when the utility model prepares described upper insulation course in step s 5, edge retains some breach and forms zone of heating lead-in wire window 6, as shown in Figure 9.
Preferably, the utility model is at the upper surface preparation temperature sensitive layer 7 of the upper insulation course 5 prepared and gas sensitive layer electrode 8, described gas sensitization layer electrode 8 and described temperature sensitive 7 are positioned at the diverse location of described zone of heating 4 area just above, as shown in Figure 10.
S6, prepare gas sensitization layer 9 at the upper surface of the upper insulation course 5 prepared, described gas sensitization layer 9 is positioned at the area just above of described zone of heating 4, and described gas sensitization layer 9 covers the upper surface of the described upper insulation course between described gas sensitization layer electrode 8 liang of electrodes, thus be communicated with described gas sensitization layer electrode 8, as shown in figure 11.
Optionally, the size of described monocrystalline substrate 1 can be 2 cun, 4 cun or 6 cun.
Preparation process also comprises: before described S1 step, utilizes the solution such as acid solution, organic solvent and deionized water to clean described monocrystalline substrate, then dries up with nitrogen.
The method of the described porous silicon layer 2 of the preparation in described step S1 is electrochemical method, is specially: adopt Zener breakdown to produce hole technique and prepare, corrosive liquid is 5%HF solution, and voltage is 5V.
Optionally, described porous silicon layer 2 also can adopt photochemical corrosion method, etching method or hydrothermal etching to prepare.
The method preparing silica membrane in described step S2 is thermal oxidation process, and the thickness of the described silica membrane prepared is 500nm.Be specially: use thermal oxidation technology to anneal the monocrystalline substrate 1 with described porous silicon layer 2, temperature is 1200 degrees Celsius, and the time is 10 hours.
In described step S1, when preparing described porous silicon layer 2, described zone of heating 4 drops in the area just above of described porous silicon layer 2, makes described porous silicon layer 2 can more stably support zone of heating 4, and what occur because of effectively not supporting when effectively preventing device to be given a shock collision breaks.Meanwhile, described zone of heating 4 is positioned at the area just above of described porous silicon layer 2, can also ensure sufficient effect of heat insulation.
In order to ensure good effect of heat insulation, the thickness of the described porous silicon layer 2 prepared in described step S1 is 100 μm.The effect of heat insulation of porous silicon is directly proportional to porosity, and when porosity is 90%, its thermal conductivity can be low to moderate 1w/ (mK), and therefore, the porosity of the described porous silicon layer 2 of the utility model embodiment 2 is 90%.
In order to ensure safety, described monocrystalline substrate 1 and described porous silicon layer 2 arrange lower insulation course 3.Because silicon dioxide has good insulating property, insulation course can be used as.In step S3, the method for the lower insulation course 3 of preparation is: magnetron sputtering deposition layer of silicon dioxide in described monocrystalline substrate 1 and described porous silicon layer 2, its thickness is 100-500nm, is preferably 500nm.
Optionally, the silicon nitride film layer of described lower insulation course 3 also can be thickness be 100-800nm.
Optionally, in order to make described zone of heating 4 more firmly be connected on described lower insulation course 3, at position magnetron sputtering deposition first adhesive linkage 31 that the upper surface of described lower insulation course 3 is corresponding with described zone of heating 4, be preferably titanium adhesive linkage, thickness is preferably 50nm, as shown in figure 13.
The method preparing described zone of heating in described step S4 is: on described lower insulation course, even glue lithographic definition goes out shape and the position of zone of heating, magnetron sputtering deposition layer of metal platinum, adopts stripping technology to remove photoresist, obtains metal platinum heater strip layer.Preferably, described metal platinum heater strip layer thickness is 50-200nm, is preferably 200nm.
In order to ensure safety, described zone of heating 4 arranges insulation course 5.Because silicon dioxide has good insulating property, insulation course can be used as.In step S5, the method for the upper insulation course 5 of preparation is: magnetron sputtering deposition layer of silicon dioxide on described zone of heating 4, and its thickness is 100-500nm, is preferably 500nm.
Optionally, the silicon nitride film layer of described upper insulation course 5 also can be thickness be 100-800nm.
Optionally, more firmly be connected on described upper insulation course 5 to make described temperature sensitive 7 and described gas sensitization layer electrode 8, after described step S5, also comprise: insulation course 5 prepares the second adhesive linkage 51 on described, preparation method is: on insulation course 5, magnetron sputtering deposition layer of metal titanium forms the second adhesive linkage 51 on described, thickness is preferably 50nm, as shown in figure 13.
Described temperature sensitive 7 is temperature detecting resistance, can obtain the temperature of zone of heating 4 by measuring its resistance.In after described step S5, the method for preparation temperature sensitive layer 7 and described gas sensitization layer electrode 8 is: the even glue lithographic definition of upper surface of the second adhesive linkage 51 obtained in above-mentioned steps goes out shape and the position of temperature sensitive and gas sensitive layer electrode, magnetron sputtering deposition layer of metal platinum, adopt stripping technology to remove photoresist, obtain metal platinum temperature detecting resistance and gas sensitization layer electrode.Preferably, the thickness 150-500nm of described temperature sensitive 7 and described gas sensitization layer electrode 8, is preferably 500nm in the present embodiment.
Optionally, described temperature sensitive 7 and described gas sensitization layer electrode 8 also can for realizing other metallic diaphragms of above-mentioned functions.
To react with it on described gas sensitization layer 9 surface the change of the resistivity caused by measuring gas molecule to be measured, realizing the detection to gas.Described gas sensitization layer 9 covers the surface of the described upper insulation course 5 between described gas sensitization layer electrode 8 and two electrodes, thus is communicated with described gas sensitization layer electrode 8.The method preparing gas sensitization layer 9 in described step S6 is: even glue lithographic definition goes out the position of gas sensitive layer, adopts the mode of magnetron sputtering to sputter layer of metal oxide, adopts stripping technology to remove photoresist and obtains gas sensitization layer 9.Preferably, described metal oxide is the SnO of 20-300nm
2, be preferably 300nm.
Optionally, described metal oxide can be other gas sensitives.
Implement the utility model, following beneficial effect can be reached:
(1) porous silicon layer is set on a monocrystaline silicon substrate, because porous silicon layer is uniformly distributed in monocrystalline substrate, uniform force, therefore the lower insulating layer of thin-film on it can stably be supported, thus film-form insulation course breaks and causes gas sensor to lose efficacy when effectively avoiding device to be given a shock or to collide, improve shock resistance and the stability of gas sensor, reduce the requirement to its working environment.In addition, gas sensor effectively can also be avoided to come off at the hot operation zone of heating that insulation course distortion warpage causes at present, thus improve the serviceable life of gas sensor.
(2) hole due to porous silicon is fine and closely woven, and air flowing is therebetween comparatively slow, makes it have good heat-proof quality.Adopt porous silicon layer as thermofin, zone of heating is arranged in the area just above of porous silicon layer, the effect of better insulation can be played, thus increase the detection sensitivity of gas sensor.
(3) at upper surface and the hole wall surface covering layer of silicon dioxide film of porous silicon layer, effectively can solve the higher thermal losses caused of the hole wall thermal conductivity be exposed in air, reduce power consumption further, strengthen effect of heat insulation.
(4) compared with traditional insulated tank, the preparation technology of porous silicon layer is simple, with low cost, more easily controls, thus can improving production efficiency effectively, reduces costs.
(5) etch porous silicon layer on a monocrystaline silicon substrate as thermofin, simultaneously as supporting layer, gas sensor space can be saved, simplify gas sensor one-piece construction.
(6) adopt silica-base material as gas sensor material, make easily through MEMS process technology, processing technology is ripe, and working (machining) efficiency is high.
Above disclosedly be only a kind of preferred embodiment of the utility model, certainly can not limit the interest field of the utility model with this, therefore according to the equivalent variations that the utility model claim is done, still belong to the scope that the utility model is contained.
Claims (10)
1. a MEMS gas sensor, is characterized in that, comprising:
Monocrystalline substrate (1);
Porous silicon layer (2), be formed at the upper surface of described monocrystalline substrate (1) and there is certain depth, the upper surface of described porous silicon layer (2) and hole wall surface are formed with silica membrane (21), and described porous silicon layer (2) is concordant with the upper surface of described monocrystalline substrate (1);
Lower insulation course (3), covers the upper surface of described porous silicon layer (2) and described monocrystalline substrate (1);
Zone of heating (4), be arranged at the upper surface of described lower insulation course (3), and described zone of heating (4) is positioned at the area just above of described porous silicon layer (2);
Upper insulation course (5), covers the upper surface of described zone of heating (4);
Gas sensitization layer (9), be arranged at the upper surface of described upper insulation course (5), and described gas sensitization layer (9) is positioned at the area just above of described zone of heating (4).
2. MEMS gas sensor as claimed in claim 1, it is characterized in that, described gas sensor also comprises:
Temperature sensitive (7), is arranged at the upper surface of described upper insulation course (5);
Gas sensitization layer electrode (8), be arranged at the upper surface of described upper insulation course (5), and described gas sensitization layer electrode (8) and described temperature sensitive (7) are positioned at the diverse location of described zone of heating (4) area just above, and described gas sensitization layer (9) covers the upper surface of the described upper insulation course (5) between described gas sensitization layer electrode (8) and two electrodes, thus be communicated with described gas sensitization layer electrode (8).
3. MEMS gas sensor as claimed in claim 1 or 2, it is characterized in that, the thickness of described porous silicon layer (2) is 20-100 μm.
4. MEMS gas sensor as claimed in claim 1 or 2, it is characterized in that, the porosity of described porous silicon layer (2) is 50%-90%.
5. MEMS gas sensor as claimed in claim 1 or 2, it is characterized in that, the thickness of described silica membrane (21) is 100-500nm.
6. MEMS gas sensor as claimed in claim 1 or 2, it is characterized in that, described lower insulation course (3) is the silicon nitride film layer of 100-800nm for thickness is the silica coating of 100-500nm or thickness, and described upper insulation course (5) is identical with described lower insulation course (3).
7. MEMS gas sensor as claimed in claim 1 or 2, it is characterized in that, described zone of heating (4) is polysilicon heater strip layer or metal platinum zone of heating.
8. MEMS gas sensor as claimed in claim 1 or 2, is characterized in that, the SnO that described gas sensitization layer (9) is 20-300nm
2.
9. MEMS gas sensor as claimed in claim 2, is characterized in that, described temperature sensitive (7) and described gas sensitization layer electrode (8) for thickness be the metal platinum of 150-500nm.
10. MEMS gas sensor as claimed in claim 1 or 2, is characterized in that, described upper insulation course (5) edge has some breach and forms zone of heating lead-in wire window (6).
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| CN104142359A (en) * | 2014-07-18 | 2014-11-12 | 苏州能斯达电子科技有限公司 | MEMS gas sensor and machining method thereof |
| CN106226268A (en) * | 2016-07-06 | 2016-12-14 | 燕山大学 | A kind of porous silicon silicon porous silicon gas sensor based on evanescent wave resonance |
| CN107064222A (en) * | 2017-05-04 | 2017-08-18 | 歌尔股份有限公司 | Gas sensor and its processing method |
| US10631368B2 (en) | 2015-12-28 | 2020-04-21 | Industrial Technology Research Institute | Micro-electromechanical temperature control system with thermal reservoir |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104142359A (en) * | 2014-07-18 | 2014-11-12 | 苏州能斯达电子科技有限公司 | MEMS gas sensor and machining method thereof |
| CN104142359B (en) * | 2014-07-18 | 2016-08-31 | 苏州能斯达电子科技有限公司 | A kind of MEMS gas sensor and processing method thereof |
| US10631368B2 (en) | 2015-12-28 | 2020-04-21 | Industrial Technology Research Institute | Micro-electromechanical temperature control system with thermal reservoir |
| CN106226268A (en) * | 2016-07-06 | 2016-12-14 | 燕山大学 | A kind of porous silicon silicon porous silicon gas sensor based on evanescent wave resonance |
| CN107064222A (en) * | 2017-05-04 | 2017-08-18 | 歌尔股份有限公司 | Gas sensor and its processing method |
| CN107064222B (en) * | 2017-05-04 | 2024-04-19 | 潍坊歌尔微电子有限公司 | Gas sensor and processing method thereof |
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Inventor after: Shen Fangping Inventor after: Qi Mingfeng Inventor after: Liu Rui Inventor after: Ding Haiyan Inventor after: Gu Wen Inventor before: Shen Fangping Inventor before: Zhang Ting Inventor before: Qi Mingfeng Inventor before: Liu Rui Inventor before: Ding Haiyan Inventor before: Gu Wen |