CN104817054B - Microspring formula cantilever beam carries soaking plate micro-heater and preparation technology thereof - Google Patents
Microspring formula cantilever beam carries soaking plate micro-heater and preparation technology thereof Download PDFInfo
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- CN104817054B CN104817054B CN201510223934.6A CN201510223934A CN104817054B CN 104817054 B CN104817054 B CN 104817054B CN 201510223934 A CN201510223934 A CN 201510223934A CN 104817054 B CN104817054 B CN 104817054B
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- cantilever beam
- insulating barrier
- soaking plate
- heater
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Abstract
The invention discloses a kind of Microspring formula cantilever beam and carry soaking plate micro-heater, including silicon pedestal, dielectric film, heating unit and soaking plate；Being provided with through hole in the middle part of silicon pedestal, dielectric film covers on pedestal and through hole thereof, and wherein dielectric film covers and is formed with cantilever beam；Heating unit includes heater strip and electrode, and heater strip is located on cantilever beam, and electrode is located on dielectric film；Soaking plate is positioned in through hole, and is connected to the lower section of cantilever beam.And disclose the preparation technology of the present invention.The present invention uses cantilever beam, reduces the heat conducting and radiating of micro-heater；Use insulation film, it is achieved that the compensation of stress, increase the structural stability of cantilever beam；Have employed Microspring, the flatulence of heat type stress produced when releasing intrinsic stress and the micro-heater work of composite membrane；Use soaking plate, substantially increase the uniform temperature of reflecting regional, improve reaction precision；Use silica-based MEMS technology, can be compatible with lsi technology perfection, be suitable to large-scale production.
Description
Technical field
The present invention relates to micro-heater, specifically a kind of Microspring formula cantilever beam carries soaking plate micro-heater
And preparation technology.
Background technology
As surface sensor based on MEMS technology, at polymeric enzyme reaction chip heater, Yi Jihong
Infrared light supply in outer analysis system, the detection of gas under extreme condition, indoor formaldehyde gas syndrome are pre-
The aspect such as anti-is widely used.In the case of power consumption is certain, how to obtain larger area uniformly divide
The temperature of cloth is to weigh a major criterion of micro-heater performance height.
At present, most micro-hotplate is all to be by the way of controlling the space layout of heater strip
Acquisition high-quality samming region, principle is by the way of changing heater strip space layout, increases anti-
Reflect the heat release of zone boundary, reduce the mode of zone line heat release.Which is empty due to heater strip to be taken into account
Between layout thus limit micro-heater miniaturization；Or by the way of sandwich interlayer by heating unit,
All hot cell, reaction members utilize high insulating coefficient, the material of high critical breakdown electric field to keep apart, by
Then three-decker, on support membrane or cantilever beam structure, preparation cost and power consumption are the most relatively large；
The structure of micro-hotplate mainly has closing membrane structure and cantilever beam structure, and the power consumption of cantilever beam structure is wanted
More low in energy consumption than closing membrane structure, and cantilever beam structure will cause device due to the thermal stress release And Spread of Solute of composite membrane
Part rises and falls in the horizontal plane, and along with the rising of device reaction temperature, composite membrane by expanded by heating, this
All can increase cantilever beam structure thermal stress localized clusters a bit.
Summary of the invention
The present invention solves the unstressed release of above-mentioned cantilever beam and reaction member non-uniform temperature problem, carry
A kind of Microspring formula cantilever beam has been supplied to carry soaking plate micro-heater and preparation technology thereof, in order to reach above-mentioned
Purpose is the present invention adopt the following technical scheme that
A kind of Microspring formula cantilever beam carries soaking plate micro-heater, including silicon pedestal, dielectric film, heating
Unit and soaking plate；Be provided with through hole in the middle part of described silicon pedestal, described dielectric film cover at described pedestal and
On its through hole, the part that wherein said dielectric film covers on described through hole is provided with air-gap and forms cantilever
Beam；Described heating unit includes that heater strip and electrode, described heater strip are located on described cantilever beam, described
Electrode is located on described dielectric film；Described soaking plate is positioned in described through hole, and is connected to described cantilever beam
Lower section.
Preferably, described dielectric film includes the compressive stress layer being made up of the first dielectric film and by the second dielectric film
The tensile stress layer constituted.
Preferably, described compressive stress layer is by SiO2Making, described tensile stress layer is by SixNyOr SiC makes.
Preferably, described cantilever beam includes one or more cantilever, the secondary that described cantilever is the most rectangular
Bending structure.
Preferably, the described cantilever beam of one or more described cantilever composition in overall dextrorotation or left-handed spiral configuration,
Center of rotation is positioned at described through hole center.
Preferably, described heating unit is made up of chromium or platinum.
Preferably, described soaking plate is made up of monocrystal silicon.
Preferably, described silicon pedestal is made up of 100 crystal orientation monocrystal silicon.
A kind of Microspring formula cantilever beam carries soaking plate micro-heater preparation technology, comprises the following steps:
Silicon pedestal grows insulating barrier；Grow the second insulating barrier；
Etch the second insulating barrier, expose the first insulating barrier window；
Etch away the first insulating barrier, expose silicon pedestal；Continue etching silicon pedestal 1.5-2.5 μm；
Prepare zone of heating；
Prepare electrode；
Annealing；
Micro-heater is inverted, positive and negative correct alignment, make annular etching groove, dry etching silicon pedestal 20-25
μm；
Remove first, second insulating barrier on Center Island；
Wet method or dry method synchronize etching Center Island and annular etching groove until exposing air-gap；
Continue the silicon etching away on cantilever beam, expose soaking plate.
Preferably, Microspring formula cantilever beam carries soaking plate micro-heater preparation technology, comprises the following steps:
The method combined by dry oxygen or dry oxygen wet oxygen on the silicon pedestal in 100 crystal orientation prepares SiO2First
Insulating barrier, then prepare Si by plasma enhanced chemical vapor deposition PECVD techniquexNyOr SiC
Two insulating barriers；
With refiner at one layer of positive glue BP212 of upper uniform spin coating, photoetching technique is utilized to remove at non-NULL air gap
Photoresist, then magnetron sputtering Ni is as etch mask, utilizes lift-of stripping technology to expose air-gap window
Mouthful, then carry out inductively coupled plasma ICP technology etching, etch away the second insulating barrier of air-gap；
Utilize HF acid etch liquid to continue the first insulating barrier etched away at air-gap, then utilize TMAH
Etching continues etching silicon pedestal；
Washing front Ni protecting film, utilize magnetron sputter to sputter Pt or Ni heater strip, glue is born in spin coating
BN303-30, utilizes photoetching technique to prepare heater strip；
Electron beam evaporation EBE technology and lift-off technology is utilized to prepare Au electrode；
It is heated to 500 DEG C, nitrogen atmosphere, annealing；
Micro-heater is inverted, positive and negative correcting pattern, then utilize the technique etching of etching the second insulating barrier
Go out the window of annular etching groove and lose silicon pedestal with reactive ion etching RIE dry process；
The technique utilizing step to etch the second insulating barrier etch away the first insulating barrier that soaking plate covers above,
Second insulating barrier；
Utilize Tetramethylammonium hydroxide TMAH anisotropic wet etch technique or deep reaction ion etching
DRIE dry etch process etches annular etching groove and the monocrystal silicon that covers above of soaking plate until carving simultaneously
Wear the air-gap exposing front；
This device is put into wet etching in TMAH etching liquid and falls remaining monocrystal silicon on cantilever beam, release
Go out cantilever beam, and expose silicon soaking plate.
The present invention provide Microspring formula cantilever beam carry soaking plate micro-heater strengthen cantilever beam intensity with
The hot operation limit；Carry soaking plate structure in order to be distributed at reaction member by even heat, improve
React precision and improve the space availability ratio at reaction member.The present invention's is based on MEMS technology micro-
Heater, uses cantilever beam structure, reduces the heat conducting and radiating of micro-heater；Use structure of composite membrane,
Achieve the compensation of stress, increase the structural stability of cantilever beam；Have employed Microspring structure, release
The flatulence of heat type stress produced when the intrinsic stress of composite membrane and micro-heater work；Use soaking plate structure,
Substantially increase the uniform temperature of reflecting regional, improve reaction precision；Use silica-based MEMS technology, can
With compatible with lsi technology perfection, be suitable to large-scale production.
Accompanying drawing explanation
Accompanying drawing described herein is used for providing a further understanding of the present invention, constitutes of the application
Point, it is not intended that inappropriate limitation of the present invention, in the accompanying drawings:
Fig. 1 is embodiment of the present invention left view schematic diagram；
Fig. 2 is embodiment of the present invention top view schematic diagram；
Fig. 3 is embodiment of the present invention upward view schematic diagram.
Detailed description of the invention
The present invention is described in detail, in the signal of this present invention below in conjunction with accompanying drawing and specific embodiment
Property embodiment and explanation be used for explaining the present invention, but not as a limitation of the invention.
Embodiment:
As shown in Figures 1 to 3, a kind of Microspring formula cantilever beam carries soaking plate micro-heater, including silicon pedestal 1,
Dielectric film, heating unit 4 and soaking plate 6；Silicon pedestal 1 is made up of<110>crystal orientation monocrystal silicon, described
Being provided with through hole in the middle part of silicon pedestal 1, described dielectric film covers on described pedestal and through hole thereof, wherein said
The part that dielectric film covers on described through hole is provided with air-gap 8 and forms cantilever beam 10；Described heating is single
Unit 4 includes that heater strip 11 and electrode 5, heater strip 11 width are 20 μm, a length of 1.5mm, electrode 5
For Au electrode, described heater strip 11 is located on described cantilever beam 10, and described electrode 5 is located at described insulation
On film, heating unit 4 has heating and temp sensing function simultaneously, and direct current or alternating current power supply can be used to power；
Described soaking plate 6 is positioned in described through hole, and is connected to the lower section of described cantilever beam 10.
Described dielectric film in the present embodiment includes the compressive stress layer being made up of the first dielectric film 2 and by second
The tensile stress layer that dielectric film 3 is constituted, both can carry out stress compensation by the composite membrane of composition, it is thus achieved that higher machine
The composite membrane of tool stable performance, composite membrane is all that dielectric film plays electric isolution effect.Wherein said compressive stress
Layer is by SiO2Making, described tensile stress layer is by SixNyOr SiC makes.
Described cantilever beam 10 in the present embodiment includes one or more cantilever, and the cantilever in the present embodiment is four
Bar, the twice bended structure that described cantilever is the most rectangular, i.e. cantilever generally L-shaped, including the most individual
The kink of 45 °, it is to avoid along the fracture in silicon pedestal<110>direction in preparation process, cantilever is also in addition
It can be S-shaped.The described cantilever beam 10 of one or more described cantilever composition is in overall dextrorotation or left-handed knot
Structure, center of rotation is positioned at described through hole center.
As the part preferred version of above-described embodiment scheme, described heating unit 4 can use and MEMS
The material that processing compatibility is good, Cr zone of heating can realize the heating of relatively low temperature (< 200 DEG C)；Pt resistance
Heating and the thermometric of higher temperature (200-800 DEG C) can be realized, it is also possible to be Ni.
As the part preferred version of above-described embodiment scheme, described soaking plate 6 is made up of monocrystal silicon.
Novel Microspring formula cantilever beam carries the preparation method of soaking plate structure, comprises the following steps:
(1), on silicon pedestal, insulating barrier is grown；Grow the second insulating barrier；
(2), etch the second insulating barrier, expose the first insulating barrier window；
(3), etch away the first insulating barrier, expose silicon pedestal；Continue etching silicon pedestal 1.5-2.5 μm；
(4), zone of heating is prepared；
(5), electrode is prepared；
(6), annealing；
(7), micro-heater is inverted, positive and negative correct alignment, make annular etching groove, dry etching silicon
Pedestal 20-25 μm；
(8) first, second insulating barrier on Center Island, is removed；
(9), wet method or dry method synchronize etching Center Island and annular etching groove until exposing air-gap；
(10), continue the silicon that etches away on cantilever beam, expose soaking plate.
Concrete, referring to Fig. 1～3 equally, it is micro-that the novel Microspring formula cantilever beam of this example carries soaking plate
Heater, its preparation method comprises the following steps:
(1), prepared by the method combined by dry oxygen or dry oxygen wet oxygen on the silicon pedestal 1 in<100>crystal orientation
The SiO that two-sided 800nm is thick2First insulating barrier 2, then pass through plasma enhanced chemical vapor deposition
PECVD technique prepares the Si that two-sided 600nm is thickxNy/ SiC the second insulating barrier 3；
(2), with refiner one layer of positive glue BP212 of uniform spin coating on 3, utilize photoetching technique to go unless
Photoresist at air-gap 8, then magnetron sputtering 300nm thickness Ni is as etch mask, utilizes lift-of to shell
Separating process exposes air-gap 8 window.Then inductively coupled plasma ICP technology etching, etching are carried out
Fall the second insulating barrier of air-gap 8；
(3), utilize HF acid etch liquid to continue the first insulating barrier 2 etched away at air-gap, then utilize
TMAH etching continues etching silicon pedestal 1, and the degree of depth is 1.5 μm-2.5 μm；
(4), wash front Ni protecting film, utilize magnetron sputter to sputter Pt/Ni heater strip.Thickness
It is respectively 200nm/20nm.Spin coating thickness 0.9 μm bears glue BN303-30, utilizes photoetching technique to prepare
Heater strip: long 1.5mm, wide 20 μm.
(5) electron beam evaporation EBE technology and lift-off technology, is utilized to prepare 0.5 μm Au electrode；
(6), being heated to 500 DEG C, nitrogen atmosphere, 45min makes annealing treatment；
(7), micro-heater is inverted, positive and negative correcting pattern.Then the technique utilizing step (2) etches
Go out annular etching groove 9 window and with reactive ion etching RIE dry process erosion silicon pedestal 1 degree of depth be
20-25μm；
(8) technique, utilizing step (2) etch away the first insulating barrier 2 that soaking plate 6 covers above,
Second insulating barrier 3；
(9) TMAH anisotropic wet etch technique or deep reaction ion etching DRIE dry method, are utilized
Etching technics etches annular etching groove 9 and the monocrystal silicon that covers above of soaking plate 6 until cutting through and exposing simultaneously
The air-gap 8 in front；
(10), this device is put into wet etching in TMAH etching liquid and falls on cantilever beam 10 remaining 1.5
μm-2.5 μm monocrystal silicon, discharges cantilever beam 10, and exposes silicon soaking plate 6.
The technical scheme provided the embodiment of the present invention above is described in detail, used herein
Principle and the embodiment of the embodiment of the present invention are set forth by specific case, saying of above example
The bright principle being only applicable to help to understand the embodiment of the present invention；General technology people simultaneously for this area
Member, according to the embodiment of the present invention, all will change in detailed description of the invention and range of application,
In sum, this specification content should not be construed as limitation of the present invention.
Claims (2)
1. a Microspring formula cantilever beam carries soaking plate micro-heater preparation technology, it is characterised in that include
Following steps:
Silicon pedestal grows insulating barrier；Grow the second insulating barrier；
Etch the second insulating barrier, expose the first insulating barrier window；
Etch away the first insulating barrier, expose silicon pedestal；Continue etching silicon pedestal 1.5-2.5 μm；
Prepare zone of heating；
Prepare electrode；
Annealing；
Micro-heater is inverted, positive and negative correct alignment, make annular etching groove, dry etching silicon pedestal 20-25
μm；
Remove first, second insulating barrier on Center Island；
Wet method or dry method synchronize etching Center Island and annular etching groove until exposing air-gap；
Continue the silicon etching away on cantilever beam, expose soaking plate.
2. Microspring formula cantilever beam as claimed in claim 1 carries soaking plate micro-heater preparation technology,
It is characterized in that comprising the following steps:
The method combined by dry oxygen or dry oxygen wet oxygen on the silicon pedestal in 100 crystal orientation prepares SiO2First
Insulating barrier, then prepare Si by plasma enhanced chemical vapor deposition PECVD techniquexNyOr SiC
Two insulating barriers；
With refiner at one layer of positive glue BP212 of upper uniform spin coating, photoetching technique is utilized to remove at non-NULL air gap
Photoresist, then magnetron sputtering Ni is as etch mask, utilizes lift-of stripping technology to expose air-gap window
Mouthful, then carry out inductively coupled plasma ICP technology etching, etch away the second insulating barrier of air-gap；
Utilize HF acid etch liquid to continue the first insulating barrier etched away at air-gap, then utilize TMAH
Etching continues etching silicon pedestal；
Washing front Ni protecting film, utilize magnetron sputter to sputter Pt or Ni heater strip, glue is born in spin coating
BN303-30, utilizes photoetching technique to prepare heater strip；
Electron beam evaporation EBE technology and lift-off technology is utilized to prepare Au electrode；
It is heated to 500 DEG C, nitrogen atmosphere, annealing；
Micro-heater is inverted, positive and negative correcting pattern, then utilize the technique etching of etching the second insulating barrier
Go out the window of annular etching groove and lose silicon pedestal with reactive ion etching RIE dry process；
The technique utilizing step to etch the second insulating barrier etch away the first insulating barrier that soaking plate covers above,
Second insulating barrier；
Utilize Tetramethylammonium hydroxide TMAH anisotropic wet etch technique or deep reaction ion etching
DRIE dry etch process etches annular etching groove and the monocrystal silicon that covers above of soaking plate until carving simultaneously
Wear the air-gap exposing front；
This device is put into wet etching in TMAH etching liquid and falls remaining monocrystal silicon on cantilever beam, release
Go out cantilever beam, and expose silicon soaking plate.
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| US10347814B2 (en) | 2016-04-01 | 2019-07-09 | Infineon Technologies Ag | MEMS heater or emitter structure for fast heating and cooling cycles |
| US10681777B2 (en) | 2016-04-01 | 2020-06-09 | Infineon Technologies Ag | Light emitter devices, optical filter structures and methods for forming light emitter devices and optical filter structures |
| US10955599B2 (en) | 2016-04-01 | 2021-03-23 | Infineon Technologies Ag | Light emitter devices, photoacoustic gas sensors and methods for forming light emitter devices |
| CN106744652B (en) * | 2017-02-10 | 2019-04-30 | 苏州甫一电子科技有限公司 | The micro- heating chip of the MEMS of composite construction and its manufacturing method and application |
| CN107089638A (en) * | 2017-04-24 | 2017-08-25 | 广东美的制冷设备有限公司 | Microheater and its processing method |
| CN109031534B (en) * | 2018-08-28 | 2020-08-11 | 中山大学 | Thermal tuning grating coupler |
| CN109786422B (en) * | 2019-01-23 | 2020-11-10 | 西安交通大学 | Piezoelectric excitation tension type silicon micro-resonance pressure sensor chip and preparation method thereof |
| CN110040678B (en) * | 2019-04-18 | 2021-06-18 | 中国科学院上海微系统与信息技术研究所 | Micro sensor and preparation method thereof |
| DE102022122536A1 (en) | 2022-09-06 | 2024-03-07 | Lpkf Laser & Electronics Aktiengesellschaft | Micro-heating element with at least one heatable base and a micro-heating element and a method for producing the micro-heating element |
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| FI112005B (en) * | 1995-11-24 | 2003-10-15 | Valtion Teknillinen | Electrically modulated thermal radiation source |
| ES2118041B1 (en) * | 1996-07-12 | 1999-04-16 | Consejo Superior Investigacion | TEMPERATURE HOMOGENIZING PLATE FOR THERMALLY INSULATED MICRODISVICES. |
| WO2002080620A1 (en) * | 2001-03-28 | 2002-10-10 | Ecole Polytechnique Federale De Lausanne (Epfl) | High temperature micro-hotplate |
| CN100423311C (en) * | 2005-12-29 | 2008-10-01 | 中国科学院上海微系统与信息技术研究所 | Production of micromechanical infrared detector array based on double material effect |
| KR100917792B1 (en) * | 2007-07-06 | 2009-09-24 | 전자부품연구원 | Fabricating method for Micro Heater Having Reflection Thin Film and the same |
| CN100549643C (en) * | 2007-12-12 | 2009-10-14 | 李鹏 | A kind of microbridge of micro-metering bolometer |
| US8859303B2 (en) * | 2010-01-21 | 2014-10-14 | Cambridge Cmos Sensors Ltd. | IR emitter and NDIR sensor |
| CN202869656U (en) * | 2012-06-06 | 2013-04-10 | 武汉高德红外股份有限公司 | Highly stress-balanced infrared detector |
| CN204873818U (en) * | 2015-05-05 | 2015-12-16 | 广州大学 | Little spring cantilever beam is from taking little heater of soaking board |
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