CN204454562U - Microheater, gas sensor and infrared light supply - Google Patents
Microheater, gas sensor and infrared light supply Download PDFInfo
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- CN204454562U CN204454562U CN201420710067.XU CN201420710067U CN204454562U CN 204454562 U CN204454562 U CN 204454562U CN 201420710067 U CN201420710067 U CN 201420710067U CN 204454562 U CN204454562 U CN 204454562U
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Abstract
The utility model provides a kind of microheater, gas sensor and infrared light supply, and described microheater has (111) type silicon chip substrate, is arranged at etching mask layer and the functional structure layer of (111) type silicon chip substrate upper surface.Described functional structure layer has the heating resistor bar and pin configuration thereof that are attached to etching mask layer upper surface.Described (111) type silicon chip substrate and etching mask layer and functional structure layer be jointly formed be positioned at upper side position place in the middle of microheater entirety and the thermal treatment zone of unsettled setting, the framework region of gap-forming around the thermal treatment zone.Described etching mask layer and functional structure layer are formed with the support overarm being connected the thermal treatment zone and framework region jointly.Described (111) type silicon chip substrate comprises and is formed in substrate framework on the downside of framework region, is formed in silicon structural layer bottom the thermal treatment zone, adopts anisotropic wet etching process to be formed in insulation chambers between substrate framework and silicon structural layer.
Description
Technical field
The utility model is positioned at technical field of microelectronic mechanical systems, particularly relates to a kind of microheater and is provided with gas sensor and the infrared light supply of this microheater.
Background technology
Heater is one of critical component of hot associated gas sensor and heat radiation type infrared light supply.Based on MEMS(Micro-Electro-Mechanical System, MEMS) microheater that manufactures of technology due to its low-power consumption, low cost, small size and batch micro operations, there is very high cost performance.On MEMS micro-heater, namely covering metal oxide semiconductor and electrode form metal-oxide semiconductor (MOS) formula gas sensor; For the resistive heater that metal platinum material is formed, because itself just has certain gas-sensitive property, cover one deck catalyst material thereon, then form catalytic combustion method gas sensor; Micro-heater makes one deck high radiant rate material and then forms infrared light supply.Because the heating-up temperature of this kind of hot associated gas sensor and infrared light supply has very large impact to output signal, therefore need in the course of the work to keep the stable of temperature.On the other hand, in order to reduce the power consumption of device, between the thermal treatment zone and substrate, usually making the heat insulating construction such as cavity, cantilever beam, being used for reducing the topmost thermal losses of device---heat transfer.From backing material, these MEMS heaters mainly contain two kinds, one adopts if silica, silicon nitride composite bed are as support membrane, form the thermal treatment zone with resistive heater, gas sensing layer or radiating layer etc., this structure has higher thermal insulation, and thermal mass is less, be applicable to the application needing temperature to be carried out to high frequency modulated, but simultaneously also because specific area is large, easily because thermal convection current causes thermal perturbation, affect the stability that signal exports; Another kind adopts SOI(Silicon-On-Insulator, silicon in dielectric substrate) substrate, except the composite bed described in the first, thereunder also there is certain thickness silicon structure, both the mechanical strength of the thermal treatment zone can have been increased, the insulation effect that also can realize the thermal treatment zone owing to having larger thermal capacitance, reduce surface heat convection current to the disturbance of Heating Zone Temperature, but this structure is also integrated with certain thickness silicon materials due to brace summer, thermal resistance is caused to diminish, increase heat transfer, thus make device power consumption increase.
Therefore, be necessary to be improved to solve the problem to existing microheater.
Utility model content
The purpose of this utility model is that providing a kind of has the thermal losses simultaneously of larger thermal capacitance less microheater, gas sensor and infrared light supply.
For realizing above-mentioned utility model object, the utility model provides a kind of microheater, type silicon chip substrate that it has (111), the etching mask layer being arranged at (111) type silicon chip substrate upper surface and functional structure layer, described functional structure layer has the heating resistor bar and pin configuration thereof that are attached to etching mask layer upper surface, described (111) type silicon chip substrate and etching mask layer and functional structure layer are jointly formed and are positioned at upper side position place in the middle of microheater entirety and the thermal treatment zone of unsettled setting, the framework region of gap-forming around the thermal treatment zone, described etching mask layer and functional structure layer are jointly formed with the film-form being connected the thermal treatment zone and framework region and support overarm, described (111) type silicon chip substrate comprises the substrate framework be formed on the downside of framework region, be formed in the silicon structural layer bottom the thermal treatment zone, employing anisotropic wet etching process is formed in the insulation chambers between substrate framework and silicon structural layer.
As further improvement of the utility model, described etching mask layer adopts silicon oxide masking film or silicon nitride mask or silica and silicon nitride compound mask.
As further improvement of the utility model, the length-width ratio of described support overarm is between 1.7 to 300.
As further improvement of the utility model, in the horizontal direction, the couple positioned opposite of the described thermal treatment zone and framework region has etching mask layer.
For realizing above-mentioned utility model object, the utility model additionally provides a kind of gas sensor, and it comprises above-mentioned microheater and the insulating barrier that is molded over outside the heating resistor bar of the functional structure layer in microheater and pin configuration thereof and metal oxide gas sensing layer.
For realizing above-mentioned utility model object, the utility model additionally provides a kind of infrared light supply, and it comprises above-mentioned microheater and is molded over the high radiant rate layer outside the heating resistor bar of the functional structure layer in microheater and pin configuration thereof.
The beneficial effects of the utility model are: in the utility model, microheater utilizes the anisotropic wet corrosion mechanism of (111) silicon chip substrate, certain thickness silicon structural layer has been made on the downside of the thermal treatment zone, the thermal treatment zone is made to have larger thermal capacitance, reduce the disturbance of temperature, be formed with insulation chambers between the thermal treatment zone and substrate framework simultaneously, and support overarm is still membrane structure, there is higher heat-insulating property, heat transfer is less, thus effectively can reduce the power consumption of microheater, and it is simple that the utility model microheater has manufacture craft, the advantage that processing cost is low.
Accompanying drawing explanation
Fig. 1 a is the structural representation that in the manufacture method of the utility model microheater, step S1 presents.
Fig. 1 b is the structural representation that in the manufacture method of the utility model microheater, step S2 presents.
Fig. 1 c is the part-structure schematic diagram that in the manufacture method of the utility model microheater, step S3 presents.
Fig. 1 d is another structural representation that in the manufacture method of the utility model microheater, step S3 presents.
Fig. 1 e is the structural representation that in the manufacture method of the utility model microheater, step S4-S5 presents.
Fig. 1 f is the structural representation that in the manufacture method of the utility model microheater, step S6 presents.
Fig. 2 a is the cross section structure schematic diagram vertical with supporting axis of hanging oneself from a beam that in the manufacture method of the utility model microheater, step S2 presents.
Fig. 2 b is the cross section structure schematic diagram vertical with supporting axis of hanging oneself from a beam that in the manufacture method of the utility model microheater, step S4 presents.
Fig. 2 c is the cross section structure schematic diagram vertical with supporting axis of hanging oneself from a beam that in the manufacture method of the utility model microheater, step S5 presents.
Fig. 2 d is the cross section structure schematic diagram vertical with supporting axis of hanging oneself from a beam that in the manufacture method of the utility model microheater, step S6 presents.
Fig. 3 a is the structure schematic top plan view that in the manufacture method of the utility model microheater, step S3 presents.
Fig. 3 b is the structure schematic top plan view that in the manufacture method of the utility model microheater, step S5 presents.
Fig. 3 c is the structure schematic top plan view that in the manufacture method of the utility model microheater, step S6 presents.
Detailed description of the invention
Below with reference to each embodiment shown in the drawings, the utility model is described in detail.But these embodiments do not limit the utility model, the structure that those of ordinary skill in the art makes according to these embodiments, method or conversion functionally are all included in protection domain of the present utility model.
Please refer to the preferred embodiment that Fig. 1 f, Fig. 2 d and Fig. 3 c are depicted as the utility model microheater.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present utility model in a schematic way, then only the assembly relevant with the utility model is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
Microheater described in the utility model has (111) type silicon chip substrate 101, is arranged at etching mask layer 102 and the functional structure layer of (111) type silicon chip substrate 101 upper surface; Described functional structure layer has the heating resistor bar and pin configuration 103 thereof that are attached to etching mask layer 102 upper surface.
Wherein, described (111) type silicon chip substrate 101 and etching mask layer 102 and functional structure layer be jointly formed be positioned at upper side position place in the middle of microheater entirety and the thermal treatment zone 2 of unsettled setting, by the framework region 3 of corrosion window 105 gap-forming around the thermal treatment zone 2.Described etching mask layer 102 and functional structure layer are jointly formed with the film-form being connected the thermal treatment zone 2 and framework region 3 and support overarm 109.Described (111) type silicon chip substrate 101 comprises and is formed in substrate framework 1011 on the downside of framework region 3, is formed in silicon structural layer 107 bottom the thermal treatment zone 2, adopts anisotropic wet etching process to be formed in insulation chambers 106 between substrate framework 1011 and silicon structural layer 107.
Shown in Fig. 1 a to Fig. 1 f, Fig. 2 a to Fig. 2 d and Fig. 3 a to figure, the utility model also relates to the manufacture method of described microheater, and it comprises the following steps:
S1, as shown in Figure 1a, there is provided one (111) type silicon chip 101 as substrate, and be multiple grooves 1010 of t1 at this substrate 101 upper surface etching depth, to form the brace summer boss 108(of thermal treatment zone silicon structural layer 107 between groove 1010 and multiple connection thermals treatment zone silicon structural layer 107 at substrate 101 top as shown in Fig. 2 a, 3a);
S2, as shown in Fig. 1 a, 2a and 3a, step S1 obtain structure upper surface make insulation etching mask layer 102; This upper surface comprises the internal face of groove 1010; Wherein, in this step, described etching mask layer can adopt silicon oxide masking film or silicon nitride mask or silica and silicon nitride compound mask;
S3, as shown in figs. lc and ld, the structure upper surface obtained in step S2 makes functional structure layer, has the heating resistor bar and pin configuration 103 thereof that are attached to etching mask layer 102 upper surface in this functional structure layer; Wherein, described heating resistor bar and pin configuration 103 thereof can make by the method for magnetron sputtering, electron beam evaporation or thermal evaporation; In addition, when the utility model microheater is as gas sensor or the application of heat radiation type infrared light supply, in this step, the metal oxide gas sensing layer 104 that described functional structure layer shaping is also included in reshaping insulating barrier on the upside of etching mask layer 102 and is positioned on the upside of insulating barrier, or on etching mask layer 102 reshaping high radiant rate layer 104; Thus the utility model also can relate to a kind of gas sensor and a kind of infrared light supply, wherein the structure of this gas sensor and infrared light supply specifically arranges the insulating barrier be molded on the upside of etching mask layer 102 and the metal oxide gas sensing layer 104 be positioned on the upside of insulating barrier further in the functional structure layer of the above-mentioned microheater of the utility model, or is molded over the high radiant rate layer 104 on etching mask layer 102;
S4, as shown by figures 2 b and 3b, the structure that step S3 obtains makes photoresist, and to utilize bottom mask plate photoetching groove 1010 photoresist of 111 and each brace summer boss 108 two side areas adjacent with groove 1010, then the etching mask layer 102 removed aforementioned two-part photoresist and be positioned on the downside of this two parts photoresist, until expose described substrate 101; Wherein, in this step, the main negative photoresist that adopts carries out photoetching, and the removal of etching mask layer adopts the method for BOE solution wet etching or RIE dry etching (i.e. reactive ion etching);
S5, as shown in Fig. 1 e and 2c, the upper surface of the described substrate 101 be exposed in dry etch step S4 is until a predetermined depth t2, and to form etching tank 105, described groove 1010 and etching tank 105 form corrosion window jointly; Wherein, described etching tank 105 is except the position adjacent with brace summer boss 108, there is the spacing of 1 micron in the edge at other positions and groove 1010 sidewall, brace summer boss 108 can be eroded when making thus to corrode in S6 step, and except the position adjacent with brace summer boss 108, other positions adjacent with groove can not be corroded because there being the existence of etching mask layer 102; Namely in the horizontal direction, the described thermal treatment zone 2 has etching mask layer with the opposite side of framework region 3, can not be corroded in step S6 to make the silicon structural layer 107 bottom the thermal treatment zone 2;
S6, as Fig. 1 f, shown in 2d and 3c, remove photoresist, by corrosion window, anisotropic wet etching is carried out to substrate 101, form the insulation chambers 106 that lower surface is planar projected as hexagonal t2 degree of depth, simultaneously, brace summer boss 108 between corrosion window is also corroded completely because of the removal of its surperficial etching mask layer 102, thus form the silicon structural layer 107 with t1 thickness, the thermal treatment zone 2 of the unsettled setting of etching mask layer 102 and functional structure layer, and be connected to the support overarm 109 formed around the thermal treatment zone 2 and by etching mask layer 102 and functional structure layer.Wherein, the length-width ratio of described support overarm is between 1.7 to 300; Except the thermal treatment zone 2 and other microheater parts supported except overarm 109 are framework region 3, the substrate portions being in framework region 3 is substrate framework 1011.
Wherein, the anisotropic corrosion in step S6 adopts KOH solution (potassium hydroxide solution) or TMAH solution (tetramethyl ammonium hydroxide solution) to carry out, and corrosion temperature is at 45 DEG C to 90 DEG C.
In conjunction with the manufacture method of above-mentioned the utility model microheater, the following method specifically introduced MEMS infrared light supply that a kind of manufacture method based on the above-mentioned microheater of the utility model carries out high heat capacity low-power consumption and manufacture, wherein sets the size of the required thermal treatment zone 2 as the square of 200 μm * 200 μm; Silicon structural layer 107 thickness of the setting thermal treatment zone 2 is t1=10 μm, support overarm 109 for being distributed in the Parallel Rectangular of the direction on square four angles along <112> crystal orientation, length is l=100 μm, width is w=10 μm, and between silicon structural layer 107 and substrate framework 1011, spacing (that is height of insulation chambers 106) is t2=20 μm.
The manufacture method of composition graphs 1a to Fig. 3 c and above-mentioned microheater, the manufacture method of this MEMS infrared light supply comprises the following steps:
S1: provide one (111) type silicon chip 101 as substrate, surperficial dry method etching depth is multiple grooves 1010 of 10 μm over the substrate, the brace summer boss 108 of described thermal treatment zone silicon structural layer 107 is connected to the square thermal treatment zone silicon structural layer 107 and four that form one 200 μm * 200 μm in described substrate top, the width of this brace summer boss 108 is greater than the width of object support overarm 109, in the present embodiment, the width of this brace summer boss 108 is taken as 20 μm;
S2: the body structure surface obtained in step S1 carries out thermal oxide, growth a layer thickness is the silica of 500nm, as the etching mask layer 102 of insulation;
S3: the method making of the structure upper surface sputtering obtained in step S2 is for the RTD bar that heats and pin configuration 103 thereof; And then make the thick SiNx film of one deck high radiant rate material 104, the 300nm adopting LPCVD to deposit in the present embodiment as radiating layer at upper surface; RTD bar and pin configuration 103 thereof and high radiant rate material 104 form described functional structure layer;
S4: make photoresist by the method for glue spraying in the structure that step S3 obtains, utilize the photoresist of the bottom 111 of mask plate lithography step S1 further groove 1010 and each brace summer boss 108 two side portions region (namely adjacent with groove 1010 two side areas) along its length, form pre-prepared etching tank 112.Wherein, bottom groove 1010 except the base adjacent with brace summer boss 108, the distance between other base and pre-prepared etching tank 112 is more than or equal to 2 μm; And the base adjacent with brace summer boss 108, pre-prepared etching tank 112 is extended to brace summer boss 108 upper surface by this place, limit sidewall, and during to brace summer boss 108 upper surface, pre-prepared etching tank 112 spacing in both sides is 10 μm; Then the described pre-prepared photoresist of etching tank 112 correspondence and the etching mask layer 102 under being positioned at it and functional structure layer is removed, until expose described substrate;
S5: the upper surface of the described substrate be exposed in dry etch step S4, etching depth is 20 μm, to form described etching tank 105; Described groove 1010 and etching tank 105 form corrosion window jointly;
S6: remove photoresist, by described corrosion window to described substrate at 50 DEG C, anisotropic wet corrosion is carried out in the KOH solution of 30wt%, hexagonal insulation chambers 106 is planar projected as to form lower surface, silicon structure on each brace summer boss 108 between corrosion window is corroded completely, only leave the silica that width is 10 μm, SiNx film support overarm 109, the silicon structural layer 107 that thickness is 10 μm is formed bottom the thermal treatment zone 2, and height of formation is the insulation chambers 106 of 20 μm on the downside of silicon structural layer 107, thus it is unsettled to form the thermal treatment zone 2, support the heat radiation type MEMS infrared light supply device that overarm 109 is membrane structure.
In sum, in the utility model, microheater utilizes the anisotropic wet corrosion mechanism of (111) silicon chip substrate 101, on the downside of the thermal treatment zone 2, make certain thickness silicon structural layer 107, make the thermal treatment zone 2 have larger thermal capacitance, reduce the disturbance of temperature, and support overarm 109 still for membrane structure, have higher heat-insulating property, heat transfer is less, effectively reduces the power consumption of microheater, and it is simple to have manufacture craft, the advantage that processing cost is low.
Be to be understood that, although this description is described according to embodiment, but not each embodiment only comprises an independently technical scheme, this narrating mode of description is only for clarity sake, those skilled in the art should by description integrally, technical scheme in each embodiment also through appropriately combined, can form other embodiments that it will be appreciated by those skilled in the art that.
A series of detailed description listed is above only illustrating for feasibility embodiment of the present utility model; they are also not used to limit protection domain of the present utility model, all do not depart from the utility model skill equivalent implementations of doing of spirit or change all should be included within protection domain of the present utility model.
Claims (6)
1. a microheater, type silicon chip substrate that it has (111), the etching mask layer being arranged at (111) type silicon chip substrate upper surface and functional structure layer, described functional structure layer has the heating resistor bar and pin configuration thereof that are attached to etching mask layer upper surface, it is characterized in that: described (111) type silicon chip substrate and etching mask layer and functional structure layer are jointly formed and are positioned at upper side position place in the middle of microheater entirety and the thermal treatment zone of unsettled setting, the framework region of gap-forming around the thermal treatment zone, described etching mask layer and functional structure layer are jointly formed with the film-form being connected the thermal treatment zone and framework region and support overarm, described (111) type silicon chip substrate comprises the substrate framework be formed on the downside of framework region, be formed in the silicon structural layer bottom the thermal treatment zone, employing anisotropic wet etching process is formed in the insulation chambers between substrate framework and silicon structural layer.
2. microheater according to claim 1, is characterized in that: described etching mask layer adopts silicon oxide masking film or silicon nitride mask or silica and silicon nitride compound mask.
3. microheater according to claim 1.It is characterized in that: the length-width ratio of described support overarm is between 1.7 to 300.
4. microheater according to claim 1, is characterized in that: in the horizontal direction, and the couple positioned opposite of the described thermal treatment zone and framework region has etching mask layer.
5. a gas sensor, is characterized in that: comprise the microheater according to any one of Claims 1-4 and the insulating barrier that is molded over outside the heating resistor bar of the functional structure layer in microheater and pin configuration thereof and metal oxide gas sensing layer.
6. an infrared light supply, is characterized in that: comprise the microheater according to any one of Claims 1-4 and be molded over the high radiant rate layer outside the heating resistor bar of the functional structure layer in microheater and pin configuration thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420710067.XU CN204454562U (en) | 2014-11-24 | 2014-11-24 | Microheater, gas sensor and infrared light supply |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420710067.XU CN204454562U (en) | 2014-11-24 | 2014-11-24 | Microheater, gas sensor and infrared light supply |
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| CN204454562U true CN204454562U (en) | 2015-07-08 |
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| CN201420710067.XU Withdrawn - After Issue CN204454562U (en) | 2014-11-24 | 2014-11-24 | Microheater, gas sensor and infrared light supply |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104401931A (en) * | 2014-11-24 | 2015-03-11 | 苏州诺联芯电子科技有限公司 | Miniature heater and manufacturing method thereof |
| CN106185784A (en) * | 2016-08-31 | 2016-12-07 | 中国科学院微电子研究所 | MEMS infrared light supply based on wet method pre-release structure and preparation method thereof |
| CN106374019A (en) * | 2016-08-31 | 2017-02-01 | 中国科学院微电子研究所 | MEMS (Micro Electro Mechanical System) infrared light source integrated with nanometer structure and fabrication method of MEMS infrared light source |
| CN110658238A (en) * | 2018-06-29 | 2020-01-07 | 上海汽车集团股份有限公司 | Catalytic combustion gas sensor based on ceramic-based micro-hotplate and preparation method thereof |
-
2014
- 2014-11-24 CN CN201420710067.XU patent/CN204454562U/en not_active Withdrawn - After Issue
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104401931A (en) * | 2014-11-24 | 2015-03-11 | 苏州诺联芯电子科技有限公司 | Miniature heater and manufacturing method thereof |
| CN104401931B (en) * | 2014-11-24 | 2016-06-29 | 苏州诺联芯电子科技有限公司 | Microheater and manufacture method thereof |
| CN106185784A (en) * | 2016-08-31 | 2016-12-07 | 中国科学院微电子研究所 | MEMS infrared light supply based on wet method pre-release structure and preparation method thereof |
| CN106374019A (en) * | 2016-08-31 | 2017-02-01 | 中国科学院微电子研究所 | MEMS (Micro Electro Mechanical System) infrared light source integrated with nanometer structure and fabrication method of MEMS infrared light source |
| CN106374019B (en) * | 2016-08-31 | 2018-10-09 | 中国科学院微电子研究所 | MEMS infrared light supplies of integrated nanometer structure and preparation method thereof |
| CN110658238A (en) * | 2018-06-29 | 2020-01-07 | 上海汽车集团股份有限公司 | Catalytic combustion gas sensor based on ceramic-based micro-hotplate and preparation method thereof |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP02 | Change in the address of a patent holder |
Address after: 402, room 215000, building NW-02, nano City, 99 Jinji Lake Road, Suzhou Industrial Park, Suzhou, Jiangsu, Suzhou, China Patentee after: SUZHOU NUOLIANXIN ELECTRONIC TECHNOLOGY CO., LTD. Address before: 215000 A06-501 office, R & D office building, 99 Jinji Lake Road, Jiangsu, Suzhou Patentee before: SUZHOU NUOLIANXIN ELECTRONIC TECHNOLOGY CO., LTD. |
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| AV01 | Patent right actively abandoned |
Granted publication date: 20150708 Effective date of abandoning: 20160629 |
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| C25 | Abandonment of patent right or utility model to avoid double patenting |