CN106374019A - MEMS (Micro Electro Mechanical System) infrared light source integrated with nanometer structure and fabrication method of MEMS infrared light source - Google Patents
MEMS (Micro Electro Mechanical System) infrared light source integrated with nanometer structure and fabrication method of MEMS infrared light source Download PDFInfo
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- CN106374019A CN106374019A CN201610798788.4A CN201610798788A CN106374019A CN 106374019 A CN106374019 A CN 106374019A CN 201610798788 A CN201610798788 A CN 201610798788A CN 106374019 A CN106374019 A CN 106374019A
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- 238000000034 method Methods 0.000 title claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 title abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 43
- 239000002184 metal Substances 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 230000005855 radiation Effects 0.000 claims abstract description 18
- 238000007789 sealing Methods 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 239000002086 nanomaterial Substances 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 18
- 229920005591 polysilicon Polymers 0.000 claims description 18
- 238000005229 chemical vapour deposition Methods 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- 238000002360 preparation method Methods 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
- 150000002500 ions Chemical class 0.000 claims description 10
- 239000000725 suspension Substances 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000007654 immersion Methods 0.000 claims description 8
- 238000001312 dry etching Methods 0.000 claims description 7
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- 238000001020 plasma etching Methods 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 230000035515 penetration Effects 0.000 claims description 4
- 229910003978 SiClx Inorganic materials 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 239000007772 electrode material Substances 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims 2
- 239000000463 material Substances 0.000 abstract description 5
- 238000002955 isolation Methods 0.000 abstract 4
- 238000001035 drying Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 82
- 238000002835 absorbance Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 235000013399 edible fruits Nutrition 0.000 description 2
- 238000005485 electric heating Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 230000005457 Black-body radiation Effects 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000005543 nano-size silicon particle Substances 0.000 description 1
- RJCRUVXAWQRZKQ-UHFFFAOYSA-N oxosilicon;silicon Chemical compound [Si].[Si]=O RJCRUVXAWQRZKQ-UHFFFAOYSA-N 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
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Abstract
The invention discloses an MEMS (Micro Electro Mechanical System) infrared light source integrated with a nanometer structure and a fabrication method of the infrared light source. The MEMS infrared light source integrated with the nanometer structure comprises a bearing substrate, a support layer, an isolation layer, a patterned metal electrode and a nanometer material radiation layer, wherein the nanometer material radiation layer covers the patterned metal electrode, the patterned metal electrode is arranged on the isolation layer, the isolation layer is arranged on the support layer, and the nanometer material radiation layer, the patterned electrode, the isolation layer and the support layer are all suspended on the bearing substrate. By the MEMS infrared light source, a thermal conduction path can be substantially reduced, the thermal quality is reduced, and the performance of an infrared light source is improved; and moreover, a structure is prevented from being damaged by releasing of a subsequent drying method, and the structural stability is improved.
Description
Technical field
The present invention relates to infrared light supply technical field, more particularly, to a kind of mems infrared light supply of integrated nanometer structure and its
Preparation method.
Background technology
Infrared technique has important answering at the aspect such as atmosphere environment supervision, commercial production safety and control, information communication
With being worth.Meanwhile, it is additionally operable to object tracking and recognition, is widely used in military field.Infrared light supply is infrared technique application
Critical elements.At present, infrared light supply mainly has infrarede emitting diode, infrared laser and heat radiation infrared light supply.Tradition
Heat radiation light source such as electric filament lamp, its electro-optical efficiency is low, modulating characteristic is poor；And the output of infrared diode is very low,
Limit range of application；Infrared laser can launch high intensity arrowband iraser, but its manufacturing cost is high.Using microcomputer
The mems infrared light supply of electric system (mems) fabrication techniques can achieve fast modulating characteristic, have electric light transformation efficiency height, small volume,
The low feature of energy consumption, is therefore applied by widely through engineering approaches.
Mems infrared light supply surface infrared emittance is an important indicator of light source performance, but the infrared light of current application
Source slin emissivity is substantially grey-body radiation (radiance is less than 1), how to prepare high temperature resistant and antioxidative black body radiation
Surface (radiance close to 1), becomes, with the material of cmos process compatible, the task of top priority improving mems infrared light supply simultaneously.
Chinese patent cn103500788a discloses a kind of nanostructured infrared light supply that can be integrated, using mems/cmos work
Amorphous silicon surfaces are carried out nano-modified processing by skill, form cone-shaped nano structure, then carry out tin coating processing；Finally adopt
Front xef2Release tech, carries out deep silicon etching to silicon substrate, separates the contact that arrowband infrared light supply is with silicon substrate, reduces heat
In the thermal losses of silicon substrate, improve the operating power of light source.This patent utilization metal-induced crystallization technology realizes infrared light supply
Surface modification, technological operation is complex；And adopt front release tech to form release cavity in the later stage, to Facad structure meeting
Cause part damage, the performance of impact light source.
Chinese patent cn104591076a discloses a kind of infrared light supply chip based on nanostructured, using close-packed arrays
Porous nanometer structure cover on electric heating layer surface；Supporting layer, electric heating layer, nanostructured radiating layer are all suspended on substrate
Side simultaneously forms suspension bridge deck structure；Finally adopt dry etching, to support silicon oxide layer as etching stop layer, form back empty
Cavity configuration.This patent adopts the method for electrochemical anodic oxidation to prepare nanostructured radiating layer, not simultaneous with the cmos technique of standard
Hold；And finally adopt dry etching, easily cause the incomplete phenomenon of release, that is, a part of silicon substrate is still connected with structure,
Lead to a part of heat to run off from substrate, substantially reduce radiation efficiency.
Content of the invention
In view of this, the present invention provides a kind of mems infrared light supply of integrated nanometer structure and preparation method thereof, and power consumption is relatively
Low, response quickly, radiant power are big, photoelectric transformation efficiency is high simple with cmos process compatible, technological operation.
The present invention provides a kind of mems infrared light supply of integrated nanometer structure, the mems infrared light of described integrated nanometer structure
Source includes carrying substrate, supporting layer, sealing coat, patterned metal electrode and nano material radiating layer；Described nano material spoke
Penetrate layer to cover in patterned metal electrode；Described patterned metal electrode is above sealing coat；Described sealing coat located at
Above support layer；Described nano material radiating layer, patterned electrodes, sealing coat, supporting layer are all suspended on described carrying substrate.
Optionally, described nano material radiating layer is compact arranged nano whiskers forest structure, is carved using reactive ion
Lose polysilicon to prepare.
Optionally, described nano material radiating layer is compact arranged nanometer column forest structure, using plasma immersion
Ion implanting performs etching to prepare.
Optionally, described supporting layer is in silicon oxide, silicon nitride or silicon oxide and silicon nitride multilayer complex films supporting layer
One kind.
Optionally, described sealing coat is silicon oxide sealing coat or nitride spacer, and described sealing coat will on silicon chip be
Row release window sutures.
Optionally, described metal electrode adopts complex metal layer electrode, and electrode under-layer adopts thin titanium as adhesion
Layer, adhesion layer deposition has platinum.
The present invention provides a kind of preparation method of the mems infrared light supply of integrated nanometer structure, comprising:
There is provided clean list to throw 100 monocrystalline silicon piece substrates, utilize lpcvd/pecvd equipment to grow in described monocrystalline substrate
Support layer film；
On the thin layer of growth, using mems technique patterned circular dry release array mouth；
Using xef2, silicon substrate is carried out with dry etching, form longitudinal depth at 50 microns to 100 microns, lateral penetration, table
Face forms the structure of suspension film layer；
Prepare sealing coat using the technique of chemical vapour deposition technique (pecvd), fill circular hole surface hole, form surface and put down
Whole, it is the structure of cavity below suspension film layer, so that the lower section of radiation areas and silicon substrate is isolated；
Splash-proofing sputtering metal electrode, graphically forms metal heating layer；
Prepare polysilicon using chemical vapour deposition technique on metal heating layer, then perform etching and obtain nanostructured；
Then in its surface splash-proofing sputtering metal.
Optionally, described use chemical vapour deposition technique prepares polysilicon, then performs etching and obtains nanostructured and include:
Prepare the polysilicon of 100nm to 2000nm using chemical vapour deposition technique, then in cl2:sf6Reaction in the atmosphere of=9:1
Ion etching, forms nano whiskers forest structure.
Optionally, described use chemical vapour deposition technique prepares polysilicon, then performs etching and obtains nanostructured and include:
Prepare the polysilicon of 100nm to 2000nm using chemical vapour deposition technique, then in o2:sf6Use in the atmosphere of=4:1
Plasma immersion ion injection performs etching, and forms nanometer column forest structure.
Optionally, described metal electrode adopts complex metal layer electrode, and electrode under-layer adopts thin titanium as adhesion
Layer, adhesion layer deposition has platinum.
Mems infrared light supply of integrated nanometer structure that the present invention provides and preparation method thereof, can solve nanostructured spoke
Penetrate layer make simple and with cmos process compatible, realize the effect of Enhanced Radiation Reduced Blast rate；Meanwhile, using the process of innovation, solution
Technique of the having determined later stage discharges the damage to structure and discharges incomplete problem, dramatically reduces heat and certainly carries substrate
Conduction of heat, increase radiation efficiency.
Brief description
For the technical scheme being illustrated more clearly that in the embodiment of the present invention, will make to required in embodiment description below
Accompanying drawing be briefly described it should be apparent that, drawings in the following description are only some embodiments of the present invention, for
For those of ordinary skill in the art, on the premise of not paying creative work, can also be obtained other according to these accompanying drawings
Accompanying drawing.
Fig. 1 be carry the long silica of underlayer surface, silicon nitride protective layer as mask sectional view；
Fig. 2 is etching surface, the sectional view of photoetching circle dry release array mouth；
Fig. 3 is xef2Dry etching, forms surfactant suspension, the sectional view of the cavity of longitudinal depth 50 microns；
Fig. 4 is to be filled up completely with cuing open of window effect figure using chemical vapour deposition technique (pecvd) growing silicon oxide sealing coat
View；
Fig. 5 is magnetron sputtering metal electrode patterned metal electrode, forms the sectional view of heating arrangement and electrode；
Fig. 6 is to prepare polysilicon using low-pressure chemical vapour deposition technique (lpcvd), and reactive ion etching nano-silicon
The sectional view of material radiating layer；
Fig. 7 is the top view of the radiation areas part photoetching circle dry release array mouth of the structure shown in Fig. 1；
Fig. 8 is that the structure shown in Fig. 5 uses the polysilicon that the technique of pecvd prepares 100nm to 2000nm, Ran Hou
cl2:sf6Carry out reactive ion etching, the nano whiskers forest structure schematic diagram of formation in the atmosphere of=9:1；
Fig. 9 is that the structure shown in Fig. 5 uses the polysilicon that the technique of pecvd prepares 1.2 μm to 1.5 μm, then in o2:
sf6Performed etching using plasma immersion ion injection (piii) in the atmosphere of=20:5=4:1, the nanometer column of formation
Forest structure schematic diagram；
Figure 10 is to control the depth-width ratio of the nanostructured shown in Fig. 8 and the knot of the absorbance on surface by controlling etch period
Fruit schematic diagram；
Figure 11 is to control the depth-width ratio of the nanostructured shown in Fig. 9 and the knot of the absorbance on surface by controlling etch period
Fruit schematic diagram.
In figure:
1: carry substrate；2: silicon oxide supporting layer；3: silicon nitride support layer；
4: sealing coat；5: metal electrode；6: nano material radiating layer；
101: release array mouth；102: cavity.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation description is it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is all other that those of ordinary skill in the art are obtained under the premise of not making creative work
Embodiment, broadly falls into the scope of protection of the invention.
The embodiment of the present invention provides a kind of mems infrared light supply of integrated nanometer structure, as shown in fig. 6, described integrated nanometer
The mems infrared light supply of structure includes from bottom to top successively: carry substrate 1, silicon oxide supporting layer 2, silicon nitride support layer 3,
Sealing coat 4, metal electrode 5, nano material radiating layer 6；Described carrying substrate 1 has release cavity 102.
Wherein, described nano material radiating layer 6 covers in patterned metal electrode 5, for infrared radiation；Described figure
Shape metal electrode 5 above sealing coat 4, for nano material radiating layer 6 transmit energy；Described sealing coat 4 is located at oxygen
Above SiClx supporting layer 2 and silicon nitride support layer 3, for electric isolution and heat-insulating effect；Described nano material radiating layer 6,
Patterned metal electrode 5, sealing coat 4, silicon oxide supporting layer 2 and silicon nitride support layer 3 are all suspended on described carrying substrate 1.
Optionally, described nano material radiating layer 6 is compact arranged nano whiskers forest structure, is carved using reactive ion
Lose polysilicon to prepare；Or, described nano material radiating layer 6 be compact arranged nanometer column forest structure, using etc. from
Sub- immersion ion injection (piii) performs etching to prepare；
Described carrying substrate 1 adopts silicon-based substrate, and described silicon-based substrate can adopt silicon quadra substrate, and micro- electricity can be utilized
Daughter silicon processing technique prepares the quadra structure of hollow on silicon chip.
Described silicon oxide supporting layer 2 and silicon nitride support layer 3 adopt silicon oxide and silicon nitride laminated film, mainly to metal
Heated by electrodes layer provides certain support.
Described sealing coat 4 adopts silicon oxide sealing coat, primarily serves electric isolution and heat-insulating effect.
Described metal electrode 5 adopts complex metal layer electrode, and electrode under-layer adopts thin titanium as adhesion layer, viscous
Redeposited platinum on attached layer.
Wherein, described supporting layer gross thickness is between 1 μm to 1.5 μm；Described separation layer thickness is between 800nm to 1 μm.
The thickness of described monocrystalline substrate is 500um.
The structure of the mems infrared light supply based on nanostructured provided in an embodiment of the present invention has a characteristic that
Described release cavity structure, using the process of the pre-release of innovation, first in clean grown above silicon
Silicon oxide and silicon nitride mask layer, photoetching circular array aperture at sensitizing range, its diameter is between 0.5 micron to 1 micron；
Spacing between the center of circle and the center of circle between 5 microns to 10 microns, using xef2Silicon substrate is carried out with dry etching, is formed longitudinally deep
In 50 microns, lateral penetration, surface forms the structure of suspension film layer to degree；Then utilize chemical vapour deposition technique (pecvd)
Technique preparation support layer film, fill circular hole surface hole, formed surfacing, below suspension film layer be cavity structure,
Make to isolate with silicon substrate below metal electrode and nanostructured radiating layer.
Described patterned metal electrode, makes the structure of strip using magnetron sputtering metal, and the thickness of bar shaped is micro- for 1
, to 2 microns, the spacing of bar shaped is by 5 microns to 50 microns for rice；The lead point of metal electrode is located at the left and right sides of heating electrode, greatly
Little is 300 microns of 300 microns of χ；Patterned metal electrode is electrically insulated by sealing coat.
Described nano material radiating layer, using the method system of reactive ion etching or plasma immersion ion injection
Standby, using polysilicon or single crystal silicon material etching；The gas of etching is respectively cl2、sf6And o2、sf6；During by controlling etching
Between, etching gas ratio can obtain the nanoforest structure of different shape, different aspect ratios；Then sputter gold on its surface
Belong to, such as gold, silver, platinum, aluminum etc., the slin emissivity of Enhanced Radiation Reduced Blast layer.
The embodiment of the present invention provides a kind of preparation method of the mems infrared light supply of integrated nanometer structure, walks including following
Rapid:
Silicon chip is processed according to standard cleaning, as carrying substrate 1；
As shown in figure 1, supporting layer is made with cleaned carrying substrate 1: carrying hot one layer of oxidation of oxygen on substrate 1
Silicon supporting layer 2, then deposits one layer of silicon nitride support layer 3 using low pressure chemical deposition (lpcvd) in the above, forms one layer again
The membrane structure of mould assembly, its thickness is between 1 μm to 1.5 μm.
As shown in Fig. 2 on the structure shown in figure 1 using steep photoetching and etching method carry substrate 1 radiation
Region part forms circular dry release array mouth 101, and concrete figure can refer to Fig. 7.
As shown in figure 3, using xef in the structure shown in Fig. 22Carry out dry etching to carrying substrate 1；In circular release
Below mouthful, form the etch areas of spheroid；At the end of etching, formed longitudinal depth 50 μm to 100 μm, lateral penetration, table
Face forms the structure of suspension film layer, is cavity 102 below suspension film layer.
As shown in figure 4, utilizing the technique of chemical vapour deposition technique (pecvd) to prepare silicon oxide in the structure shown in Fig. 3
Sealing coat 4, the silicon oxide at window can gradually block circular dry release array mouth 101 along window to interstitial growth, empty
Chamber 102 bottom has partial oxidation siliceous deposits, but does not affect device performance；Final insulation layer structure surface is gradually smooth, release
Cavity 102 completes, and separation layer thickness is between 800nm to 1 μm.
As shown in figure 5, the ti of method one layer of 200nm to 400nm of preparation of magnetron sputtering is utilized on the structure shown in Fig. 4
Adhesion layer, and then in the above sputter one layer of 600nm to 800nm pt electrode, using wet etching method to its figure
Change, form heating metal electrode 5 structure and the lead point at heating metal electrode 5 about two ends.
As shown in fig. 6, the structure shown in Fig. 5 uses the technique preparation 100nm of chemical vapour deposition technique (pecvd) extremely
The polysilicon of 2000nm, then in cl2:sf6Reactive ion etching (rie) in the atmosphere of=9:1, forms as shown in Figure 8
Nano whiskers forest structure, can control the depth-width ratio of nanostructured and the absorbance on surface (such as to scheme by controlling etch period
Shown in 10) it can be seen that in 3um～5um wave band, can reach 82.5% ir-absorbance.Afterwards, lead on its surface
The pt crossing one layer of 200nm to 400nm of sputtering carries out surface modification, increases its radiance, ultimately forms nano material radiating layer 6.
Optionally, the polycrystalline that the technique of chemical vapour deposition technique (pecvd) prepares 100nm to 2000nm can also be used
Silicon, then in o2:sf6Performed etching using plasma immersion ion injection (piii) in the atmosphere of=4:1, form such as Fig. 9
Shown nanometer column forest structure, can control the height of forest structure by controlling etch period and etching plasma power
The absorbance (as shown in figure 11) on wide ratio and surface is it can be seen that in 3.3um～5um wave band, receive for 7minpiii etching
Rice structure, ir-absorbance presents preferable concordance, is maintained at more than 75%.Then pass through to sputter one layer on its surface
The pt of 200nm to 400nm carries out surface modification, increases its radiance, ultimately forms nano material radiating layer 6.
So far, the mems infrared light supply preparation of integrated nanometer structure completes.
Mems infrared light supply of integrated nanometer structure provided in an embodiment of the present invention and preparation method thereof, can solve nanometer
Structural radiation layer make simple and with cmos process compatible, realize the effect of Enhanced Radiation Reduced Blast rate；Meanwhile, using the technique side of innovation
Method, solves the release of technique later stage and to the damage of structure and discharges incomplete problem, dramatically reduce heat self-supporting
Carry the conduction of heat of substrate, increase radiation efficiency.
The above, the only specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, and any
Those familiar with the art the invention discloses technical scope in, the change or replacement that can readily occur in, all answer
It is included within the scope of the present invention.Therefore, protection scope of the present invention should be defined by scope of the claims.
Claims (10)
1. a kind of mems infrared light supply of integrated nanometer structure is it is characterised in that the mems infrared light of described integrated nanometer structure
Source includes carrying substrate, supporting layer, sealing coat, patterned metal electrode and nano material radiating layer；Described nano material spoke
Penetrate layer to cover in patterned metal electrode；Described patterned metal electrode is above sealing coat；Described sealing coat located at
Above support layer；Described nano material radiating layer, patterned electrodes, sealing coat, supporting layer are all suspended on described carrying substrate.
2. the mems infrared light supply of integrated nanometer structure according to claim 1 is it is characterised in that described nano material spoke
Penetrating layer is compact arranged nano whiskers forest structure, is prepared using reactive ion etching polysilicon.
3. the mems infrared light supply of integrated nanometer structure according to claim 1 is it is characterised in that described nano material spoke
Penetrating layer is compact arranged nanometer column forest structure, performs etching to prepare using plasma immersion ion injection.
4. the mems infrared light supply of integrated nanometer structure according to claim 1 is it is characterised in that described supporting layer is oxygen
One of SiClx, silicon nitride or silicon oxide and silicon nitride multilayer complex films supporting layer.
5. the mems infrared light supply of integrated nanometer structure according to claim 1 is it is characterised in that described sealing coat is oxygen
SiClx sealing coat or nitride spacer, release window serial on silicon chip is sutured by described sealing coat.
6. the mems infrared light supply of integrated nanometer structure according to claim 1 is it is characterised in that described metal electrode is adopted
Use complex metal layer electrode, electrode under-layer adopts thin titanium as adhesion layer, and adhesion layer deposition has platinum.
7. a kind of preparation method of the mems infrared light supply of integrated nanometer structure is it is characterised in that include:
There is provided clean list to throw 100 monocrystalline silicon piece substrates, utilize the growth of lpcvd/pecvd equipment to support in described monocrystalline substrate
Layer film；
On the thin layer of growth, using mems technique patterned circular dry release array mouth；
Using xef2, silicon substrate is carried out with dry etching, form longitudinal depth at 50 microns to 100 microns, lateral penetration, surface shape
Become the structure of suspension film layer；
Prepare sealing coat using the technique of chemical vapour deposition technique (pecvd), fill circular hole surface hole, form surfacing,
It is the structure of cavity below suspension film layer, so that the lower section of radiation areas and silicon substrate is isolated；
Splash-proofing sputtering metal electrode, graphically forms metal heating layer；
Prepare polysilicon using chemical vapour deposition technique on metal heating layer, then perform etching and obtain nanostructured；
Then in its surface splash-proofing sputtering metal.
8. method according to claim 7 is it is characterised in that described use chemical vapour deposition technique prepares polysilicon, so
Perform etching afterwards and obtain nanostructured and include: prepare the polysilicon of 100nm to 2000nm, Ran Hou using chemical vapour deposition technique
cl2:sf6Reactive ion etching in the atmosphere of=9:1, forms nano whiskers forest structure.
9. method according to claim 7 is it is characterised in that described use chemical vapour deposition technique prepares polysilicon, so
Perform etching afterwards and obtain nanostructured and include: prepare the polysilicon of 100nm to 2000nm, Ran Hou using chemical vapour deposition technique
o2:sf6Performed etching using plasma immersion ion injection in the atmosphere of=4:1, form nanometer column forest structure.
10. method according to claim 7 is it is characterised in that described metal electrode adopts complex metal layer electrode, electrode
Bottom adopts thin titanium as adhesion layer, and adhesion layer deposition has platinum.
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| CN112082967A (en) * | 2020-09-18 | 2020-12-15 | 重庆大学 | Ultra-narrow band infrared thermal radiation light source and compact infrared gas sensor |
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