CN106276773B - MEMS infrared light supplies of suspension structure and preparation method thereof - Google Patents
MEMS infrared light supplies of suspension structure and preparation method thereof Download PDFInfo
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Abstract
The present invention discloses MEMS infrared light supplies of a kind of suspension structure and preparation method thereof.The MEMS infrared light supplies of the suspension structure include the infrared light supply structure on membrane suspension structure and the suspension structure；The membrane suspension structure is patterned supporting layer, and the supporting layer is four beam fixed support structures of the concave arc shape being deposited on carrying substrate；The infrared light supply structure includes：Heating layer, separation layer, patterned metal electrode and radiating layer；The heating layer is deposited on above the supporting layer, and the patterned metal electrode is deposited on above the supporting layer and is connected with the heating layer side；The separation layer is prepared on the heating layer；The radiating layer is prepared in the separation layer upper surface；The radiating layer, separation layer, heating layer and supporting layer, which are suspended on the carrying substrate of back cavity, forms the membrane suspension structure.Heat conduction via can be greatly decreased in the present invention, reduce thermal mass, improve the performance of infrared light supply.
Description
Technical field
The present invention relates to the MEMS infrared light supplies and its preparation of infrared light supply technical field more particularly to a kind of suspension structure
Method.
Background technology
With the rapid development of global economy, earth environment is continuous worsening, caused by various toxic, pernicious gas discharges
Air pollution problems inherent is increasingly serious, has seriously affected the survival and development of mankind itself.Into 21st century, with information skill
The maturation of art and people bring the huge market demand to the concern of environmental problem for gas sensor.
It is former that gas sensor based on non-dispersive infrared absorption spectrum (NDIR) overcomes traditional Catalysis Principles, electrochemistry
Qi-regulating body sensor be easily poisoned aging, short life the shortcomings of, have that accuracy of detection is high, range is big, reliability is high, service life
The advantages of long etc. generally acknowledged, so as to as the hot spot of research and the developing direction in gas sensor future.In NDIR gas sensors
In, infrared light supply transmitting infrared light, carbon dioxide, carbon monoxide, methane etc. can generate dipole moment variation gas molecule due to
Resonance can be generated with infrared light and be absorbed, and specific gas molecule can only resonate with the infrared light of specific wavelength, no
Same gas concentration can cause infrared light absorbed energy different, thus detector can detect infrared energy in the other end
Variation, and with this come analyze gas componant and calculate gas concentration.Since infrared detector is generally to the infrared photosensitive of variation
Sense, traditional NDIR gas sensors need one mechanical chopper of installation at infrared light supply transformable infrared to generate
Light, this labyrinth cannot meet the requirement of gas sensor micromation, portability and low power consumption.The development of MEMS technology
The modulated infrared light supply of electricity is realized, successfully solves the problems, such as this.
Core component of the MEMS infrared light supplies as NDIR gas sensors, performance drastically influence gas sensor spy
The accuracy of survey and sensitivity, at present small size, low-power consumption and high emissivity feature and preparation process simply can electrical modulation
The development of MEMS infrared light supplies becomes the research hotspot of current semiconductor gas sensor.
Chinese patent CN104591076A discloses a kind of infrared light supply chip based on nanostructured, using close-packed arrays
Nanometer deep hole membrane structure as radiating layer improve radiation efficiency, chip be equipped with substrate, supporting layer, electric heating layer, nano junction
Structure radiating layer, metal electrode；Supporting layer, electric heating layer, nanostructured radiating layer are suspended in above substrate and form suspension bridge
Face structure reduces heat conduction losses.This patent forms back cavity using dry etching, it is easy to release occurs not exclusively, greatly
Part silicon substrate is connected with structure, substantially reduces radiation efficiency.
Chinese patent CN103500788A discloses a kind of nanostructured infrared light supply integrated, utilizes MEMS/CMOS works
Skill carries out nano-modified processing to amorphous silicon surfaces, forms cone-shaped nano structure, then carry out TiN coating to cone-shaped nano structure
Processing；Finally use front XeF2Release tech carries out deep silicon etching to silicon substrate, reduces heat in silicon silk ohm fever process
In loss, improve the operating power of light source.This patent forms release cavity using last front dry etching, easily to knot
It is configured to damage, and technological operation is complex.
Invention content
In view of this, the present invention provides a kind of MEMS infrared light supplies of suspension structure and preparation method thereof, can substantially subtract
Few heat conduction loss, improves the radiation efficiency of light source, and easy to operate, power consumption is relatively low, and stability is high, and compatible with CMOS technology.
The present invention provides a kind of MEMS infrared light supplies of suspension structure, including in membrane suspension structure and the suspension structure
Infrared light supply structure；The membrane suspension structure is patterned supporting layer, and the supporting layer is is deposited on carrying substrate
Concave arc shape four beam fixed support structures；The infrared light supply structure includes：Heating layer, separation layer, patterned metal electrode and
Radiating layer；The heating layer is deposited on above the supporting layer, and the patterned metal electrode is deposited on above the supporting layer
And it is connected with the heating layer side；The separation layer is prepared on the heating layer；The radiating layer is prepared described
Separation layer upper surface；The radiating layer, separation layer, heating layer and supporting layer are suspended on the carrying substrate of back cavity and are formed
The membrane suspension structure.
Optionally, the supporting layer be silica, silicon nitride or silica and silicon nitride multilayer complex films supporting layer, institute
Supporting layer is stated with carrying substrate contact and intermediate four isolation moat structures for concave arc shape；The carrying substrate is rectangular for silicon
The silicon-based substrate of frame.
Optionally, the separation layer is silica separation layer or nitride spacer, by the heating layer and the radiation
Layer is electrically isolated.
Optionally, the heating layer is semi-conducting material rectangle heating layer, is deposited on the supporting layer.
Optionally, the metal electrode is single-layer metal electrode or complex metal layer electrode, electrode under-layer using titanium or
Chromium metal is as adhesion layer, and deposition has gold, platinum or aluminum metal on adhesion layer.
Optionally, the radiating layer uses reactive ion etching etches polycrystalline silicon, and it is gloomy to form the taper closely uprightly arranged
The nano silicon material of woods structure.
The present invention provides a kind of preparation method of the MEMS infrared light supplies of suspension structure, including：
Clean 100 monocrystalline silicon piece substrate of double throwings is provided, supporting layer is grown in the monocrystalline substrate front, then anti-
Etching mask layer is grown in the film layer of face；
Semi-conducting material heating layer, separation layer after being adulterated successively on the supporting layer using LPCVD/PECVD equipment
And radiating layer；
To the heating layer, separation layer, radiating layer by Twi-lithography, figure dissolves heating layer sensitizing range and radiating layer is quick
Sensillary area；
In growth supporting layer, heating layer, separation layer, radiating layer film layer, metal electricity is dissolved using MEMS technology figure
Pole figure case；
Using reactive ion etching or plasma immersion ion injection device etching top layer polycrystalline silicon material radiating layer, lead to
It overregulates control etch period and obtains the nanoforest structure of different-shape and depth-width ratio, utilize vapor deposition or electric plating method
Summoning film is formed in the nanoforest superstructure deposited metal layer；
Prepare suspension structure.
Optionally, it is described in growth supporting layer, heating layer, separation layer, radiating layer film layer, utilize MEMS technology figure
Metal electrode pattern is dissolved to include：
Utilize magnetron sputtering or one layer of metal electrode of evaporation or complex metal layer electrode；
Wet etching equipment patterned electrodes pattern is utilized in the metal electrode layer.
Optionally, the suspension structure for preparing includes：
To four isolation moat structures of the Film patterning concave arc shape of the supporting layer；
Chamber release window is graphically carried on the back to the monocrystalline substrate backside mask；
Wet method is carried out to back of the body chamber using wet etching to discharge to the stopping at the support layer film 50um~100um,
Then go out suspension structure using XeF2 dry releases.
MEMS infrared light supplies of suspension structure provided by the invention and preparation method thereof provide the four of a kind of new concave arc shape
The structure of the clamped suspension of beam, can be greatly decreased heat conduction loss, improve the radiation efficiency of light source；It employs wet etching and does
The process of method etching mixing release, first carries out back wet etching release, then carries out dry method XeF2 release process, can
Processing compatibility is improved, it is endless to the release of back silicon substrate to avoid common process later stage progress deep reaction ion etching (DRIE)
Entirely, the drawbacks of also wet method cavity in back is excessive, while the stability that back of the body chamber discharges completely is increased, reduce technology difficulty.
Description of the drawings
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, the accompanying drawings in the following description is only some embodiments of the present invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is the sectional view for carrying substrate face thermal oxide silica, then two-sided lpcvd silicon nitride film；
Fig. 2 is in positive LPCVD two-layer polysilicons, respectively as heating layer and radiating layer, middle PE CVD silica conducts
Separation layer, and change the sectional view of resistance value in heating layer polycrystalline silicon material heavy doping B；
Fig. 3 is two-layer polysilicon layer pattern, forms the sectional view of radiating layer and heating layer；
Fig. 4 is graphical silicon nitride support layer, forms isolation channel and the sectional view of positive gas phase HF etching windows；
Fig. 5 is graphical silicon nitride support layer, forms the vertical view of isolation channel；
Fig. 6 is the graphical of back side silicon nitride silicon mask, forms the sectional view of back of the body chamber liberation port；
Fig. 7 is the graphical of back side silicon nitride silicon mask, forms the bottom view of back of the body chamber liberation port；
Fig. 8 is the sectional view that graphical Al electrodes and RIE radiating layers polysilicon form nano silicon material；
Fig. 9 be magnetron sputtering Al, electrode patterning and RIE polysilicon radiating layers vertical view；
Figure 10 is the sectional view that TMAH wet etchings carry on the back chamber liberation port；
Figure 11 is XeF2Dry release carries on the back the sectional view of chamber liberation port；
Figure 12 is the sectional view that front gas phase HF etches the break-through of silica supporting layer；
Figure 13 is that the preparation of suspension structure is completed, the vertical view of the completion of final infrared light supply device.
In figure：
1：Carry substrate；2：Silica supporting layer；3：Silicon nitride support layer；
4：Polysilicon heating layer；5：Silica separation layer；6：Polysilicon radiating layer；
7：Silicon nitride mask layer；8：Nano-silicon radiating layer；
101：Irradiation structure；102：Heating layer structure；103：Isolation moat structure；
104：Carry on the back chamber release mouth structure；105：Metal electrode structure；106：Carry on the back chamber wet method release structure；
107：Dry release structure；108：Break-through etching structure.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained all other without making creative work
Embodiment shall fall within the protection scope of the present invention.
The embodiment of the present invention provides a kind of MEMS infrared light supplies of suspension structure, as shown in Figure 12 and Figure 13, the suspension
The MEMS infrared light supplies of structure include successively from bottom to top：Silicon nitride mask layer 7, carrying substrate 1, silica supporting layer 2,
Silicon nitride support layer 3, polysilicon heating layer 4, silica separation layer 5, polysilicon radiating layer 6；The MEMS of the suspension structure is red
Outer light source further includes patterned metal electrode structure 105, isolation moat structure 103, dry release structure 107 and break-through etching structure
108。
Wherein, the polysilicon radiating layer 6 uses reactive ion etching (RIE) etches polycrystalline silicon, forms forest nano-silicon
Radiating layer 8 for infrared radiation, and is covered in by silica separation layer 5 on polysilicon heating layer 4；Polysilicon heats
Layer 4 is set on silica supporting layer 2 and silicon nitride support layer 3, for providing energy to polysilicon radiating layer 6；The oxidation
Silicon supporting layer 2 and silicon nitride support layer 3, polysilicon heating layer 4, silica separation layer 5, polysilicon radiating layer 6 are suspended in and hold
It carries 1 top of substrate and forms the clamped suspension structure of four beams.
The carrying substrate is silicon-based substrate, and silicon square frame substrate can be used in the silicon-based substrate, using microelectronics
Body silicon processing technique prepares hollow square frame structure on silicon chip.
The supporting layer be silica, silicon nitride or silica and silicon nitride multilayer complex films supporting layer, supporting layer and
Silicon substrate contacts and intermediate four isolation moat structures for making concave arc shape；The separation layer uses silica or silicon nitride
Heating layer and radiating layer are electrically isolated by separation layer, the separation layer.
The heating layer uses semi-conducting material heating layer, thin using method deposition layer of semiconductor physically or chemically
Film, and semi-conducting material is doped and makes it have resistance heating characteristic；Rectangle heating layer can be used in heating layer, and is deposited on
On supporting layer；Single-layer metal electrode can be used in the metal electrode, such as copper, platinum, aluminium, titanium, tungsten, can also use complex metal layer
Electrode, electrode under-layer can use titanium or chromium metal as adhesion layer, redeposited metal, such as gold, platinum, aluminium on adhesion layer.
Wherein, the metal electrode layer overall thickness be 0.8 μm~1.2 μm or the thickness of connection electrode layer be 200~
400nm, the thickness of electrode layer is 600~800nm；The semi-conducting material heating layer thickness is 500nm~600nm.
The overall thickness of the support layer film is 0.6 μm~1 μm, and the separation layer thickness is 30nm~50nm.
The thickness of the monocrystalline silicon carrying substrate is 500 μm.
The MEMS infrared light supplies of suspension structure provided in an embodiment of the present invention have the following structure feature：
The supporting layer structure reduces the internal stress of film using silica and silicon nitride two film construction.First in cleaning
Double throwings (100) silicon chip on positive one layer of SiO of thermal oxide2, then in two-sided use low-pressure chemical vapor deposition (LPCVD) deposition one
Layer Si3N4.Supporting layer of the positive two film construction as entire suspension structure, the mask knot as subsequent wet release at the back side
Structure.The heating layer structure, using the polysilicon after doping B as adding thermal resistance structure, and by controlling doping concentration
The resistance of polysilicon is controlled with dosage；
The radiating layer is prepared using etches polycrystalline silicon materials.It is grown between doped polysilicon layer and etches polycrystalline silicon layer
One layer of thin silicon oxide layer, plays the role of isolation.The electrode structure is prepared using the method for magnetron sputtering, and use is pure
Metallic target as bombardment material, the crystal grain diameter of preparation is at 50 nanometers, and the thickness of film layer is at 800 nanometers.Later in surface light
It carves, the graphical of electrode is carried out using the method for wet etching；
The release structure uses the release process method of the mixing of innovation.After completion Facad structure is prepared, at back
Under the action of mask, wet etching release is carried out to back silicon substrate, it is micro- apart from front self-stopping technology supporting layer 50~100 being discharged into
The place of rice stops corrosion；Then XeF is used2Dry etching is carried out to silicon substrate, forms the structure of entire device release；
The suspension structure is using the clamped Novel suspending structure of four beam of concave arc shape, and heating layer, electricity isolated layer, radiating layer are all
Only be connected by four concave arc shape cantilever beams with silicon substrate, using arc form suspending film structure solve suspension closed film type and
The problem of cantilever film-type infrared light supply thermal stress is greatly and structure is easily rupturable, and effectively improve radiation efficiency.So that this is infrared
Light source has the characteristics that small, low in energy consumption, fast, the modulated and reliability of response is high.
The suspension structure uses the release process method of the mixing of innovation.After completion Facad structure is prepared, at back
Under the action of silicon nitride mask layer 7, wet etching release 106 is carried out to back silicon substrate, is being discharged into apart from front side supports layer
SiO250~100 microns of place stops corrosion；It is continuing with XeF2Dry etching is carried out to silicon substrate, is etching into positive SiO2
Self-stopping technology during layer forms the release structure 107 of back side silicon substrate；Then gas phase HF is used in front to SiO2Layer carries out break-through etching
108, form the structure of entire device release.
The embodiment of the present invention provides a kind of preparation method of the MEMS infrared light supplies of suspension structure, includes the following steps：
Step S11, the double silicon chips of throwing of p-type (100) are handled according to standard cleaning；
Step S12, as shown in Figure 1, with cleaned silicon wafer to manufacture supporting layer：One layer of thermal oxide on silicon chip
500nm~700nm thin layer of silicon oxide, then in two-sided mono- layer of silicon nitride of LPCVD again, thickness is in 150nm~200nm, formation
One layer of compound membrane structure；
Step S13, as shown in Fig. 2, and then LPCVD mono- layer of 600nm~800nm in front is more on the structure shown in figure 1
Crystal silicon then using the method doping of diffusion, forms n-type doping, improves the electric conductivity of polysilicon.Then it is more after doping again
Crystal silicon surface makes one layer of 50nm~100nm silica and is isolated, and last mono- layer of 500nm~800nm polysilicon of LPCVD is used for
The preparation of nano silicon material；
Step S14, as shown in figure 3, Twi-lithography in structure shown in Fig. 2, is radiating layer 101 and heating layer respectively
102 it is graphical, step is in electrical contact for heating layer and electrode；
Step S15, as shown in figure 4, continuing photoetching in structure shown in Fig. 3, graphical silicon nitride support layer formed every
From slot, for the release window of final front gas phase HF break-through etching, vertical view is shown in Fig. 5；
Step S16, as shown in fig. 6, on the basis of Facad structure shown in Fig. 5, the figure of back of the body chamber silicon nitride mask is carried out
Shape, corrodes for subsequent wet and discharges, and bottom view is shown in Fig. 7；
Step S17, as shown in figure 8, magnetron sputtering Pt electrodes on Facad structure shown in Fig. 6, and patterned electrodes, electricity
Pole shape is shown in Fig. 9；And then reactive ion etching (RIE) etching top layer polysilicon radiating layer is continuing in front, uses Cl2
And SF6Gas etching, He form the nano silicon material of forest structure for cooling down, and radiance is close to black matrix；
Step S18, as shown in Figure 10~13, on the basis of Facad structure shown in Fig. 8, back of the body chamber release window is carried out first
Wet etching, due to the anisotropy of monocrystalline silicon, corrosion mouth is presented 54.47 °, as shown in Figure 10；Eroding to distance oxidation
At 50~70 microns of silicon layer, dry method XeF2 etchings are continuing with, etches at silica and stops, as shown in figure 11；Finally just
Face carries out break-through etching using gas phase HF in isolation channel liberation port, and as shown in figure 12, the final structure that discharges is completed, such as Figure 13 institutes
Show.
So far, prepared by the MEMS infrared light supplies of suspension structure completes.
The embodiment of the present invention provides the preparation method of the MEMS infrared light supplies of another suspension structure, including walking as follows
Suddenly：
Step S21, the double silicon chips of throwing of p-type (100) are handled according to standard cleaning；
Step S22, with cleaned silicon wafer to manufacture supporting layer：One layer of 500nm~700nm oxygen of thermal oxide on silicon chip
SiClx thin layer, then in two-sided mono- layer of silicon nitride of LPCVD again, thickness is formed one layer compound thin in 150nm~200nm
Membrane structure；
Step S23, and then mono- layer of 600nm polysilicon of front LPCVD, the method for then using diffusion are adulterated, and form N-type
Doping improves the electric conductivity of polysilicon.Then again polysilicon surface after doping make one layer of 50nm~100nm silica into
Row isolation, last mono- layer of 500nm~800nm polysilicon of LPCVD are used for the preparation of nano silicon material；
Step S24, the Twi-lithography on above structure is graphical, the step of radiating layer 101 and heating layer 102 respectively
For the in electrical contact of heating layer and electrode；
Step S25, continue photoetching on above structure, graphical silicon nitride and silica supporting layer form isolation channel, use
In front dry release window；
Step S26, on the basis of above-mentioned Facad structure, the graphical of back of the body chamber silicon nitride mask is carried out, for follow-up wet
Method corrosion release；
Step S27, the magnetron sputtering Pt electrodes on Facad structure, and patterned electrodes；And then it is continuing in front
Reactive ion etching (RIE) etches top layer polysilicon radiating layer, uses Cl2And SF6Gas etching, He are formed gloomy for cooling down
The nano silicon material of woods structure, radiance is close to black matrix；
Step S28, on the basis of above-mentioned Facad structure, the wet etching of back of the body chamber release window is carried out first, due to monocrystalline
The anisotropy of silicon, corrosion mouth are presented 54.47 °；It is eroding at 50~70 microns of silicon oxide layer, XeF is used in front2
Break-through etching is carried out by isolation channel release window, the final structure that discharges is completed.
So far, prepared by the MEMS infrared light supplies of suspension structure completes.
MEMS infrared light supplies of suspension structure provided in an embodiment of the present invention and preparation method thereof provide a kind of new concave arc
The structure of the clamped suspension of four beams of shape, can be greatly decreased heat conduction loss, improve the radiation efficiency of light source；Employ wet method corruption
Erosion and the process of dry etching mixing release, first carry out back wet etching release, then carry out dry method XeF2 release works
Skill can improve processing compatibility, avoid common process later stage progress deep reaction ion etching (DRIE) to back silicon substrate
The drawbacks of release is incomplete, and also wet method cavity in back is excessive, while the stability that back of the body chamber discharges completely is increased, reduce work
Skill difficulty.
The above description is merely a specific embodiment, but protection scope of the present invention is not limited thereto, any
Those familiar with the art in the technical scope disclosed by the present invention, all should by the change or replacement that can be readily occurred in
It is included within the scope of the present invention.Therefore, protection scope of the present invention should be subject to the protection scope in claims.
Claims (8)
1. the MEMS infrared light supplies of a kind of suspension structure, which is characterized in that including membrane suspension structure and the membrane suspension knot
Infrared light supply structure on structure；The membrane suspension structure is patterned supporting layer, and the supporting layer is is deposited on carrying lining
Four beam fixed support structures of the concave arc shape on bottom, the supporting layer and carrying substrate contact and it is intermediate four for concave arc shape every
From slot structure, the carrying substrate is the silicon-based substrate of silicon square frame；The infrared light supply structure includes：Heating layer, isolation
Layer, patterned metal electrode and radiating layer；The heating layer is deposited on above the supporting layer, the patterned metal electrode
It is deposited on above the supporting layer and is connected with the heating layer side；The separation layer is prepared on the heating layer；
The radiating layer is prepared in the separation layer upper surface；The radiating layer, separation layer, heating layer and supporting layer are suspended in back
The membrane suspension structure is formed on the carrying substrate of cavity.
2. the MEMS infrared light supplies of suspension structure according to claim 1, which is characterized in that the supporting layer is oxidation
Silicon, silicon nitride or silica and silicon nitride multilayer complex films supporting layer.
3. the MEMS infrared light supplies of suspension structure according to claim 1, which is characterized in that the separation layer is silica
The heating layer and the radiating layer are electrically isolated by separation layer or nitride spacer.
4. the MEMS infrared light supplies of suspension structure according to claim 1, which is characterized in that the heating layer is semiconductor
Material rectangular heating layer is deposited on the supporting layer.
5. the MEMS infrared light supplies of suspension structure according to claim 1, which is characterized in that the metal electrode is individual layer
Metal electrode or complex metal layer electrode, electrode under-layer use titanium or chromium metal as adhesion layer, and being deposited on adhesion layer has
Gold, platinum or aluminum metal.
6. the MEMS infrared light supplies of suspension structure according to claim 1, which is characterized in that the radiating layer is using reaction
Ion etching etches polycrystalline silicon forms the nano silicon material of taper forest structure closely uprightly arranged.
7. a kind of preparation method of the MEMS infrared light supplies of suspension structure, which is characterized in that including：
Clean double throwings (100) monocrystalline silicon piece substrate is provided, supporting layer is grown in the monocrystalline silicon piece substrate face, then anti-
Etching mask layer is grown in the film layer of face；
Semi-conducting material heating layer, separation layer after adulterating are sequentially formed on the supporting layer using LPCVD/PECVD equipment
And radiating layer；
To the heating layer, separation layer, radiating layer by Twi-lithography, figure dissolves heating layer sensitizing range and radiating layer is sensitive
Area；
In growth supporting layer, heating layer, separation layer, radiating layer film layer, metal electrode figure is dissolved using MEMS technology figure
Case；
Using reactive ion etching or plasma immersion ion injection device etching top layer polycrystalline silicon material radiating layer, pass through tune
Section control etch period obtains the nanoforest structure of different-shape and depth-width ratio, using vapor deposition or electric plating method in institute
It states nanoforest superstructure deposited metal layer and forms Summoning film；
To four isolation moat structures of the graphical concave arc shape of the supporting layer；
Chamber release window is carried on the back to the monocrystalline silicon piece substrate back mask patternization；
Back of the body chamber progress wet method is discharged at the support layer film 50um~100um using wet etching and is stopped, then
Utilize XeF2Dry release goes out suspension structure.
It is 8. the method according to the description of claim 7 is characterized in that described in growth supporting layer, heating layer, separation layer, radiation
On layer film layer, dissolve metal electrode pattern using MEMS technology figure and include：
Utilize magnetron sputtering or one layer of metal electrode of evaporation or complex metal layer electrode；
Wet etching equipment patterned electrodes pattern is utilized in the metal electrode or complex metal layer electrode.
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