CN101881666A - Film-type pyroelectric infrared sensor and preparation method thereof - Google Patents
Film-type pyroelectric infrared sensor and preparation method thereof Download PDFInfo
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- CN101881666A CN101881666A CN2009101072699A CN200910107269A CN101881666A CN 101881666 A CN101881666 A CN 101881666A CN 2009101072699 A CN2009101072699 A CN 2009101072699A CN 200910107269 A CN200910107269 A CN 200910107269A CN 101881666 A CN101881666 A CN 101881666A
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Abstract
The invention relates to the field of the infrared sensor, and provides a film-type pyroelectric infrared sensor and a preparation method thereof. The sensor comprises an upper electrode filme, a lower electrode film and a pyroelectric film, which are superimposed onto each other, wherein the sensor is of a 2 structure, and n is of a natural number; the 2n structure comprises a silicon substrate which is arranged on the bottom part of the lower electrode film, the upper surface of the upper electrode film is provided with a passivation layer and an infrared absorption layer, a heat insulation layer is arranged between the lower electrode and the silicon substrate, and the heat insulation layer is provided with a supporting layer. By adopting the film-type multi-factor structure, compared with the single-factor pyroelectric infrared sensor, the adaptability of the sensor to the environmental interference such as cold-hot air stream, temperature variation and the like can be improved. The sensor has low heat conductivity, high reliability and fast response speed. The film-type pyroelectric infrared sensor can be produced through a standard micro-processing technology. The processing technology is mature, the cost is lower, and the process is simpler.
Description
Technical field
The present invention relates to field of infrared sensors, especially relate to a kind of film-type pyroelectric infrared sensor.
The invention still further relates to a kind of preparation method of film-type pyroelectric infrared sensor.
Background technology
Pyroelectric infrared sensor is a kind of infrared detector commonly used, is widely used in non-contact switch and the burglar alarm equal controller, and in automatic control, electric appliance energy-saving, fields such as security protection have broad application prospects.At safety-security area, for suppressing the interference of hot and cold air or environment temperature, improve the environmental suitability of sensor to sensor, reduce wrong report, adopt two sensitive units and even the design of four sensitive units usually.The design of so-called two sensitive unit is meant that this sensor comprises the unit infrared eye of two antithesis, has positive and negative susceptibility respectively.When hot and cold air interference or variation of ambient temperature, these two antithesis cell sensor temperature together change, the positive and negative counteracting of output signal, the output of alarm free pulse signal.And when target object such as human body moved, positive negative signal was having a timing difference therefore can't offset, the output of warning pulse signal.So-called quaternary infrared eye is equipped with the infrared sensor of four antithesis in being meant, sensor is designed to only just trigger warning when each single-element detector detects signal, and reliability is higher.At present, double base or quaternary pyroelectric infrared sensor adopt the ceramic body material more on the market, and the ceramic body material need pass through machine cuts usually, grind to be thinned to tens micron thickness again at upper and lower surface making metal electrode, and operation is loaded down with trivial details and cost is higher.In addition, the ceramic body material is thick to reach tens microns, and the device thermal capacitance is bigger, and speed of response raising is restricted.
Summary of the invention
The object of the present invention is to provide a kind of film-type pyroelectric infrared sensor, this sensor thermal conductance is lower, the reliability height, and response speed is fast.
Another object of the present invention is to provide a kind of preparation method of film-type pyroelectric infrared sensor, this method technology is simple.
Upper electrode film, bottom electrode film and the electric heating film that provides a kind of film-type pyroelectric infrared sensor, this sensor to comprise to stack together mutually is provided in the present invention, and wherein: described sensor is the 2n meta structure, and wherein, n is a natural number; The bottom that this 2n meta structure is included in described bottom electrode film is provided with silicon substrate, and described upper electrode film upper surface is provided with passivation layer and infrared absorption layer, is provided with heat insulation layer between described bottom electrode and the silicon substrate, and this porous heat insulation layer is provided with supporting layer.
The present invention also provides a kind of preparation method of membrane type pyroelectric infrared sensor, and this method comprises the following steps:
(1) utilize repeatedly sol-gel technology to prepare porous silica or spin coating proceeding prepares the Polyimide Thermal-Isolation Structure film;
(2) adopt low-pressure chemical vapor deposition or plasma activated chemical vapour deposition technology to prepare supporting layer, and be deposited on the heat insulation layer;
(3) adopt evaporation or sputtering technology deposit bottom electrode film on supporting layer;
(4) adopt sol-gel or sputtering technology on the bottom electrode film, to prepare electric heating film, utilize the graphical electric heating film of ion beam or reactive ion etching process again;
(5) adopt evaporation or sputtering technology plated film on electric heating film to form the top electrode graphic films;
(6) the using plasma chemical vapor deposition method prepares one deck passivation layer, and the definition graphics shape, exposes metal pad;
(7) adopt thermal evaporation and stripping means on passivation layer, to prepare one deck dark fund film infrared absorption layer.
With respect to prior art, beneficial effect of the present invention is: sensor construction of the present invention adopts the diaphragm type multi-factor structure, with respect to the pyroelectric unit infrared sensor, can improve the adaptability of device to environmental interference such as hot and cold air and temperature variation, sensor thermal conductance provided by the invention is lower, the reliability height, response speed is fast; This film-type pyroelectric infrared sensor can adopt the standard micro fabrication to make, the processing technology maturation, and the volume production cost is lower, and technology is simpler.
Description of drawings
Fig. 1 is the cross-sectional view of the embodiment of the invention one diaphragm type double base pyroelectric infrared sensor;
Fig. 2 is the embodiment of the invention one a diaphragm type double base pyroelectric infrared sensor structural representation;
Fig. 3 is the embodiment of the invention two diaphragm type quaternary pyroelectric infrared sensor structural representations;
Fig. 4 is an embodiment of the invention film-type pyroelectric infrared sensor work flow synoptic diagram.
Embodiment
In order to make purpose of the present invention, technical scheme and advantage clearer,, the present invention is further elaborated below in conjunction with drawings and Examples.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
As shown in Figure 1, it is the cross-sectional view of the embodiment of the invention first embodiment double base structure pyroelectric infrared sensor, the embodiment of the invention provides a kind of film-type pyroelectric infrared sensor, this sensor comprises the upper electrode film 6 that stacks together mutually, bottom electrode film 4 and electric heating film 5, described sensor is the 2n meta structure, n is a natural number, preferred n is 1,2 or 3, be that sensor is a diadactic structure, quad arrangement or eight meta structures, in the present embodiment, n=1, it is diadactic structure, as shown in Figure 2, this sensor comprises sinking device 11 and detector 12, and this detector 11 and detector 12 are formed the double base structure; The bottom that this diadactic structure is included in described bottom electrode film 4 is provided with silicon substrate 1, described upper electrode film 6 upper surfaces are provided with passivation layer 7 and infrared absorption layer 8, be provided with heat insulation layer 2 between described bottom electrode film 4 and the silicon substrate 1, this heat insulation layer 2 is selected the porous heat insulation layer for use, and this porous heat insulation layer 2 is provided with supporting layer 3.The described electric heating film of the embodiment of the invention is a ferrite thin film material, comprises zirconia titanate lead, calcium titanate lead, barium strontium titanate or strontium lead titanate.
As shown in Figure 1, sensor comprises the pyroelectric unit detector 11 and 12 of the positive and negative sensitivity of 2 series connection, when hot and cold air or variation of ambient temperature, these two single-element detectors 11 are identical with 12 response signals size but opposite in sign is cancelled each other the output of sensor alarm free signal, when the big human body of human body or other, these two sensors are response simultaneously not, and signal can't interconnectedly be offset, so output alarm signal.Supporting layer 3 in the sensor of embodiment of the invention design, bottom electrode thin layer 4, electric heating film layer 5, upper electrode film layer 6, passivation layer 7 and the infrared absorption layer 8 common photosensitive areas that constitute sensor, and between photosensitive district of sensor and substrate, increased one deck porous heat insulation layer 2, to reduce the thermal conductance of heat sink of sensor and substrate, improve response device sensitivity.
Acting as of polynary each rete of pyroelectric infrared sensor of diaphragm type of the present invention: infrared absorption layer 8 is used to improve the absorption efficiency of sensor to the infrared radiation of target incident, the general dark fund film that adopts, absorb behind the infrared radiation of target emanation self temperature raises when sensor, electric heating film layer 5 is experienced sensor temperature and is changed, discharge electric signal, for electric signal is drawn, electrode rete 6 and 4 have all been prepared in the top and bottom of electric heating film layer 5; For improving the device physical strength, under metal electrode, increased silicon nitride support layer 3; Passivation layer 7 mainly is in order to prevent pyroelectricity material performance degradation under the influence of encapsulation atmosphere; For reducing the thermal conductance between sensor and substrate, made one deck porous heat insulation layer 2 between sensor sensing district and the silicon substrate 1, like this, bottom, sensor sensing district does not just directly contact with substrate, effectively reduce the thermal conductance between sensor and substrate, this porous heat insulation layer can be selected adiabatic films such as porous silica or polyimide for use.
As shown in Figure 3, it is the structural representation of the quad arrangement pyroelectric infrared sensor of the embodiment of the invention two; Present embodiment only is illustrated the difference with embodiment one, and something in common repeats no more.
As shown in Figure 3, the embodiment of the invention two provides a kind of diaphragm type quaternary pyroelectric infrared sensor, and this quaternary sensor comprises two double base structures, and wherein 21 and 22 form a double base structure, 23 and 24 form a double base structure, the driving circuit that employing is complementary, the mistake detectivity of this structure is lower, can be applied to low false alarm and use, in circuit design, when having only these two sensors that signal output is all arranged, circuit is output alarm signal, has further reduced system's wrong report.
As shown in Figure 4, it is the film-type pyroelectric infrared sensor work flow synoptic diagram of above-mentioned two embodiment of the present invention, and the manufacturing process of described sensor is as follows:
(1) substrate 1 cleans, and substrate 1 multiselect monocrystalline silicon piece also can be selected quartz or other materials substrate for use, and it is standby that substrate cleans the back, shown in (a) among Fig. 4.
(2) heat insulation layer 2 preparation utilizes repeatedly sol-gel technology to prepare porous lower thermal conductivity film, and between 0.5～5 micron of the film thickness, shown in Fig. 4 (b), this porous heat insulation layer adopts silicon dioxide or polyimide material to make.
(3) supporting layer 3 deposits, utilize low pressure gas phase deposition (LPCVD) or plasma activated chemical vapour deposition technology (PECVD) preparation supporting layer 3, supporting layer 3 multiselects are with the laminated film of silicon dioxide or silicon nitride film or silicon dioxide and silicon nitride, its thickness generally is controlled between 0.5～2 micron, shown in Fig. 4 (c).
(4) bottom electrode 4 thin-film depositions utilize method deposit bottom electrode 4 films 4 on supporting layer such as evaporation or sputter, shown in Fig. 4 (d).The bottom electrode multiselect is with platinum or gold copper-base alloy, for improving the adhesion between bottom electrode and the supporting layer 3, Ti of sputter skim in advance or Ni-Cr alloy firm.
(5) electric heating film 5 preparation and etchings, utilize sol-gel or sputtering method on bottom electrode 4 films, to prepare electric heating film 5, about 1 micron of thickness, utilize the graphical electric heating film of ion beam or reactive ion etching process afterwards, shown in Fig. 4 (e).For improving pyroelectricity rete characteristic, often need under the temperature of 450-600, anneal, integrated for ease of sensor and treatment circuit, film annealing can be adopted laser short annealing scheme, the treatment circuit regional temperature can be controlled at like this in 450 degree.
(6) top electrode 6 film preparations.Utilize stripping means to prepare top electrode figure 6, shown in Fig. 4 (f).Upper electrode film can adopt evaporation or and sputtering method, for conveniently peeling off, coating temperature is controlled in 100 degree, the top electrode multiselect is with platinum or gold copper-base alloy.
(7) passivation layer 7 film preparations and etching utilize plasma activated chemical vapour deposition technology to prepare skim silicon nitride passivation 1-7, and the definition graphics shape, promptly make the corresponding top electrode figure as required, and the exposed portions serve metal electrode is shown in Fig. 4 (g).
(8) absorption layer 8 preparations utilize thermal evaporation and stripping means to prepare skim dark fund infrared absorption layer 8 on sensor, and shown in Fig. 4 (h), 8 pairs of incident infrared radiations of infrared absorption layer absorption efficiency can be higher than 90%.
By above-mentioned manufacture craft flow process, can obtain the polynary pyroelectric infrared sensor of the described diaphragm type of the embodiment of the invention, this sensor thermal conductance is lower, the reliability height, response speed is fast; This film-type pyroelectric infrared sensor can adopt the standard micro fabrication to make, the processing technology maturation, and the volume production cost is lower, and technology is simpler
Claims (10)
1. film-type pyroelectric infrared sensor, this sensor comprises upper electrode film, bottom electrode film and the electric heating film that stacks together mutually, it is characterized in that: described sensor is the 2n meta structure, wherein, n is a natural number; The bottom that this 2n meta structure is included in described bottom electrode film is provided with silicon substrate, and described upper electrode film upper surface is provided with passivation layer and infrared absorption layer, is provided with heat insulation layer between described bottom electrode and the silicon substrate, and this heat insulation layer is provided with supporting layer.
2. film-type pyroelectric infrared sensor according to claim 1 is characterized in that: described n is 1,2 or 3.
3. film-type pyroelectric infrared sensor according to claim 1 and 2 is characterized in that: described electric heating film is a ferroelectric thin-flim materials.
4. film-type pyroelectric infrared sensor according to claim 3 is characterized in that: described iron body thin film comprises zirconia titanate lead, calcium titanate lead, barium strontium titanate or strontium lead titanate.
5. film-type pyroelectric infrared sensor according to claim 3 is characterized in that: described heat insulation layer is porous silica or polyimide.
6. film-type pyroelectric infrared sensor according to claim 3 is characterized in that: described infrared absorption layer adopts the dark fund film to make.
7. film-type pyroelectric infrared sensor according to claim 3 is characterized in that: described supporting layer and passivation layer adopt monox or silicon nitride to make.
8. the preparation method of a membrane type pyroelectric infrared sensor is characterized in that: comprise the following steps:
(1) utilize repeatedly sol-gel technology to prepare porous silica or spin coating proceeding prepares the Polyimide Thermal-Isolation Structure film;
(2) adopt low-pressure chemical vapor deposition or plasma activated chemical vapour deposition technology to prepare supporting layer, and be deposited on the heat insulation layer;
(3) adopt evaporation or sputtering technology deposit bottom electrode film on supporting layer;
(4) adopt sol-gel or sputtering technology on the bottom electrode film, to prepare electric heating film, utilize the graphical electric heating film of ion beam or reactive ion etching process again;
(5) adopt evaporation or sputtering technology plated film on electric heating film to form the top electrode graphic films;
(6) the using plasma chemical vapor deposition method prepares one deck passivation layer, and the definition graphics shape;
(7) adopt thermal evaporation and stripping means on passivation layer, to prepare one deck dark fund film as infrared absorption layer.
9. the preparation method of membrane type pyroelectric infrared sensor according to claim 8 is characterized in that: in described (1) step, the heat insulation layer film adopts the porous silica material, and film thickness is the 0.5-5 micron.
10. the preparation method of membrane type pyroelectric infrared sensor according to claim 8 is characterized in that: in described (4) step, the preparation electric heating film comprises annealing process, and it carries out annealing in process at 450-600 ℃.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102023058A (en) * | 2010-09-30 | 2011-04-20 | 烟台睿创微纳技术有限公司 | Film type pyroelectric infrared sensor |
| WO2012071820A1 (en) * | 2010-12-01 | 2012-06-07 | 烟台睿创微纳技术有限公司 | Infrared detector and method of manufacture thereof and multi-band uncooled infrared focal plane |
| CN102848637A (en) * | 2012-08-29 | 2013-01-02 | 中国科学院长春光学精密机械与物理研究所 | Composite multilayer film infrared absorption layer |
| CN105345277A (en) * | 2015-11-26 | 2016-02-24 | 电子科技大学 | Preparing method of pyroelectric infrared device |
| CN106289539A (en) * | 2016-09-06 | 2017-01-04 | 西安交通大学 | A kind of method and apparatus for real-time monitoring chemical reaction process |
| CN108645520A (en) * | 2018-05-08 | 2018-10-12 | 电子科技大学 | A kind of flexible pyroelectric infrared detector sensing unit of low pressure electrical interference |
| CN109041288A (en) * | 2018-09-25 | 2018-12-18 | 佛山市昂达电器有限公司 | A kind of far infrared transmission device, array and preparation method |
-
2009
- 2009-05-08 CN CN2009101072699A patent/CN101881666A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102023058A (en) * | 2010-09-30 | 2011-04-20 | 烟台睿创微纳技术有限公司 | Film type pyroelectric infrared sensor |
| WO2012071820A1 (en) * | 2010-12-01 | 2012-06-07 | 烟台睿创微纳技术有限公司 | Infrared detector and method of manufacture thereof and multi-band uncooled infrared focal plane |
| CN102848637A (en) * | 2012-08-29 | 2013-01-02 | 中国科学院长春光学精密机械与物理研究所 | Composite multilayer film infrared absorption layer |
| CN105345277A (en) * | 2015-11-26 | 2016-02-24 | 电子科技大学 | Preparing method of pyroelectric infrared device |
| CN106289539A (en) * | 2016-09-06 | 2017-01-04 | 西安交通大学 | A kind of method and apparatus for real-time monitoring chemical reaction process |
| CN108645520A (en) * | 2018-05-08 | 2018-10-12 | 电子科技大学 | A kind of flexible pyroelectric infrared detector sensing unit of low pressure electrical interference |
| CN108645520B (en) * | 2018-05-08 | 2020-08-21 | 电子科技大学 | Flexible pyroelectric infrared detector sensitive unit with low-voltage electric interference |
| CN109041288A (en) * | 2018-09-25 | 2018-12-18 | 佛山市昂达电器有限公司 | A kind of far infrared transmission device, array and preparation method |
| CN109041288B (en) * | 2018-09-25 | 2023-12-15 | 佛山市昂达电器有限公司 | Far infrared emission device, array and preparation method |
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Application publication date: 20101110 |