CN106784165B - A kind of novel double-layer non-refrigerated infrared focal plane probe dot structure and preparation method thereof - Google Patents
A kind of novel double-layer non-refrigerated infrared focal plane probe dot structure and preparation method thereof Download PDFInfo
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- 239000000523 sample Substances 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 239000010410 layer Substances 0.000 claims abstract description 273
- 229910052751 metal Inorganic materials 0.000 claims abstract description 73
- 239000002184 metal Substances 0.000 claims abstract description 73
- 239000011241 protective layer Substances 0.000 claims abstract description 59
- 238000000151 deposition Methods 0.000 claims abstract description 23
- 230000000994 depressogenic effect Effects 0.000 claims abstract description 20
- 238000005530 etching Methods 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000001259 photo etching Methods 0.000 claims abstract description 16
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- 239000010408 film Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 29
- 239000010409 thin film Substances 0.000 claims description 15
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical group [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- 238000005229 chemical vapour deposition Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 7
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- 238000005240 physical vapour deposition Methods 0.000 claims description 7
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- 238000002161 passivation Methods 0.000 description 2
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- 229910052720 vanadium Inorganic materials 0.000 description 2
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- 238000000137 annealing Methods 0.000 description 1
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- 238000007254 oxidation reaction Methods 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00142—Bridges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J5/22—Electrical features thereof
- G01J5/24—Use of specially adapted circuits, e.g. bridge circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to a kind of novel double-layer non-refrigerated infrared focal plane probe dot structure and preparation method thereof, makes metallic reflector on comprising reading circuit semiconductor pedestal, insulating medium layer is deposited on metallic reflector；The first sacrifice layer, the first supporting layer, heat-sensitive layer and the first protective layer are sequentially depositing on insulating medium layer; the supporting layer of photoetching first and the first protective layer are until the first sacrifice layer of contact; depositing second sacrificial layer on first protective layer; and processing is patterned to the first sacrifice layer and the second sacrifice layer; anchor point hole is formed on the first sacrifice layer and the second sacrifice layer after graphical treatment; the anchor point hole is straight hole, deposits the second supporting layer；In the second supporting layer etching vias；In the second supporting layer and the first etching protection layer contact hole；With deposit metal electrodes layer and metal depressed place on the second supporting layer in contact hole, the second protective layer is deposited on metal electrode figure, utilizes the protective layer of photolithography patterning second and the second supporting layer, finally, carries out structure release.
Description
Technical field
The invention belongs to the MEMS technique manufacturing field in semiconductor technology, and in particular to a kind of novel double-layer is non-
Refrigerated infrared focal plane probe dot structure and preparation method thereof.
Background technology
Uncooled infrared detection technology is that the infra-red radiation (IR) of external object is perceived and turned without refrigeration system
Electric signal is melted into after processing in the technology of display terminal output, can be widely applied to national defence, space flight, medical science, production monitoring etc.
Various fields.Non-refrigerated infrared focal plane probe has light weight, volume because it can work under room temperature state
The advantages that small, long lifespan, cost are low, power is small, startup is fast and stability is good, meets civilian infrared system and part is military red
There is an urgent need to development was swift and violent in recent years to Long Wave Infrared Probe for external system.Non-refrigerated infrared detector mainly includes surveying
Bolometer, pyroelectricity and thermopile detector etc., wherein the heat of the microbolometer based on MEMS (MEMS) manufacturing process
(Micro-bolometer) infrared detector is counted because its speed of response is high, manufacture craft it is simple and with IC manufacturing work
Skill is compatible, has relatively low cross-talk and relatively low 1/f noise, higher frame speed, works without chopper, be easy to mass produce
The advantages that, it is one of mainstream technology of non-refrigerated infrared detector.
Micro-metering bolometer (Micro-bolometer) be based on the material with sensitive characteristic when temperature changes
A kind of non-refrigerated infrared detector that resistance value occurs corresponding change and manufactured.Heat during work to being supported on heat insulating construction
Quick resistance both ends apply fixed bias voltage or current source, and temperature change caused by incident IR radiation causes thermistor to hinder
Value reduces, so that electric current, voltage change, and the change of electric signal is read by reading circuit (ROIC).As temperature-sensitive electricity
The material of resistance must have higher temperature-coefficient of electrical resistance (TCR), relatively low 1/f noise, appropriate resistance value and stable electricity
Performance, and the requirement such as easily prepared.The thermo-sensitive material of main flow includes vanadium oxide (VOx), non-crystalline silicon and high-temperature superconductor at present
Material (YBCO) etc., research report of the materials such as titanium oxide, nickel oxide as micro-metering bolometer thermo-sensitive material is also related in addition
Road.
The unit generally use cantilever beam micro-bridge structure of non-refrigerate infrared focal plane array seeker, is discharged using sacrifice layer
Technique forms microbridge supporting construction, and the thermo-sensitive material in support platform is connected by microbridge with substrate reading circuit.Now to visiting
The resolution requirement more and more higher of device is surveyed, array request is increasing, and such as the size constancy of fruit chip, then pixel is less and less,
Can more and more higher to the flatness requirement of pixel；Two layers of micro-bridge structure needs two layers of sacrifice layer, the energy that two layers of sacrifice layer absorbs
It is more, and requirement of two layers of sacrifice layer to flatness is higher；But conventional double technique sacrifice layer needs to etch twice, due to erosion
The reason for carving first layer sacrifice layer, crystal column surface out-of-flatness after having etched, the coating of second layer sacrifice layer is influenceed, causes the second layer
Sacrifice layer out-of-flatness.
With the progressively diminution of pixel dimension, the infrared energy incided in infrared image element is contracted in a manner of square law
It is small.When pixel dimension drops to 17 microns by 25 microns, projectile energy reduces by one times；When pixel is reduced to 12 microns, enter
Penetrate energy is only 25 microns 25%.
In addition, traditional anchor point hole uses inclined hole, using PVD (physical vapour deposition (PVD)) technique, deposited metal is electric in inclined hole
Pole, be advantageous to electrode sidewall filling, but occupy effective area, it is heavy using CVD (chemical vapor deposition) using straight hole technique
Product tungsten filled sidewall, then, utilizes chemical-mechanical planarization (Chemical Mechanical Planarization, CMP) work
Skill completes tungsten grinding, can be reduced the area that anchor point hole accounts for, and improves fill factor.
The content of the invention
The present invention is directed to the deficiencies in the prior art, there is provided a kind of novel double-layer non-refrigerated infrared focal plane probe
Dot structure and preparation method thereof, when coating second layer sacrifice layer, first layer is not etched also, and crystal column surface is very flat
Whole, follow-up two layers of sacrifice layer can be carried out continuously etching, and anchor point hole is straight hole, reduce area occupied.
A kind of novel double-layer non-refrigerated infrared focal plane probe dot structure of the present invention, technical scheme are as follows：It is a kind of new
Type bilayer non-refrigerated infrared focal plane probe dot structure, including a semiconductor pedestal comprising reading circuit and one is with micro-
The detector of bridge supporting construction, the detector are formed with the reading circuit of the semiconductor pedestal and electrically connected, it is characterised in that
The detector includes metallic reflector, insulating medium layer, supporting layer, protective layer, metal electrode layer and heat-sensitive layer, the metal
Reflecting layer includes several metal derbies, and the supporting layer includes the first supporting layer and the second supporting layer, and the protective layer includes the
One protective layer and the second protective layer；
Metallic reflector and insulating medium layer are disposed with the reading circuit of the semiconductor pedestal；
First supporting layer is arranged on the top of the insulating medium layer, and first supporting layer is sequentially arranged above heat
Photosensitive layer, the first protective layer and the second supporting layer；
First protective layer and the second supporting layer are provided with contact hole, and the lower end of the contact hole terminates at the temperature-sensitive
Layer, the contact hole is interior to be full of metal electrode and metal depressed place, and the metal depressed place is arranged on the top of the metal electrode, the gold
Category electrode electrically connects with the heat-sensitive layer；
Second supporting layer is provided with anchor point hole, and the anchor point hole includes the first anchor point hole and the 3rd anchor point hole, described
Anchor point hole is straight hole, and bottom is provided with through hole, and the lower end of the through hole terminates at the metal derby, in through hole and the anchor point hole
Full of the metal electrode and metal depressed place, metal electrode layer and the metal depressed place is provided with the second protective layer.
Further, the insulating medium layer is silicon nitride film, and the supporting layer is silicon nitride film, and the protective layer is
Silicon nitride film, the heat-sensitive layer are vanadium oxide film or thin film of titanium oxide.
The beneficial effect of non-refrigerated infrared focal plane probe is in the present invention：It is inverted using microbridge, is not had below microbridge
Bridge pier is supported, structure is not easy to be deformed, higher to Stress Control tolerance, and technique is easier to control；Employ two layers it is micro-
Bridge structure, first layer are infrared radiation absorption structure, and the second layer is thermal isolation micro-bridge structure, effectively lift the filling system of pixel
Number, and improve the absorption efficiency of incident IR radiation.
The technical scheme of the preparation method of above-mentioned detector pixel structure is as follows in the present invention：A kind of uncooled ir is burnt flat
Surface detector dot structure preparation method, comprises the following steps：
Step 1：Metallic reflector is made on comprising reading circuit semiconductor pedestal；And figure is carried out to metallic reflector
Shapeization processing, it is graphical after metallic reflector form several metal derbies；The metal derby and the reading on semiconductor pedestal
Circuit electrically connects；Insulating medium layer is deposited on patterned metal reflecting layer is completed；
Step 2：The first sacrifice layer, the first supporting layer, heat-sensitive layer and first are sequentially depositing on described insulating medium layer
Protective layer, first supporting layer are low stress nitride silicon thin film, and first protective layer is low stress nitride silicon thin film, described
Heat-sensitive layer is vanadium oxide or thin film of titanium oxide；
Step 3：Processing is patterned to the first supporting layer and the first protective layer, the supporting layer of photoetching first and first protect
Sheath is until contact the first sacrifice layer, after completing graphical treatment, first after the first exposed sacrifice layer and graphical treatment
Depositing second sacrificial layer on protective layer, first sacrifice layer and the second sacrifice layer use polyimides or amorphous carbon；
Step 4：Processing is patterned to the first sacrifice layer and the second sacrifice layer, forms the first anchor point hole, the second anchor point
Hole and the 3rd anchor point hole, the first anchor point hole, the second anchor point hole and the 3rd anchor point hole are straight hole, and complete graphical place
The second supporting layer is deposited on the first sacrifice layer and the second sacrifice layer after reason, second supporting layer is silicon nitride film；
Step 5：Through hole is carved by the method for photoetching and etching on the semiconductor pedestal of the second supporting layer deposited,
Through hole etch-stop is in the metal derby；Photoetching simultaneously or the second supporting layer of etching and the first protective layer are connect with obtaining contact hole
Contact hole etch-stop is in the heat-sensitive layer；
Step 6：Deposit metal electrodes layer in the contact hole of formation and on graphical rear second supporting layer, in deposition gold
In through hole and contact hole after category electrode layer, depressed place is deposited using the method for chemical vapor deposition, then, is ground using chemical machinery
Grind flatening process and complete depressed place grinding；
Step 7：And processing is patterned to metal electrode layer, obtain metal electrode using the method for photoetching or etching
Figure, deposits the second protective layer on obtained metal electrode figure, and second protective layer is low stress nitride silicon thin film；
Step 8:Using the method for photoetching and etching, processing, shape are patterned to the second protective layer and the second supporting layer
Into passivation layer pattern, structure release is carried out：The first sacrifice layer and the second sacrifice layer are removed, forms micro-bridge structure.
A kind of beneficial effect of novel double-layer non-refrigerated infrared focal plane probe dot structure preparation method in the present invention
It is：Using two layers of sacrifice layer, the energy of absorption is higher, and before coating second layer sacrifice layer, first layer sacrifice layer is not carried out also
Etching, crystal column surface is very smooth, and follow-up two layers of sacrifice layer can be carried out continuously etching；In addition, anchor point hole uses straight hole technique,
Tungsten grinding is completed using CVD (chemical vapor deposition) deposits tungsten filled sidewall, and using chemical-mechanical planarization (CMP) technique,
The area that anchor point hole accounts for is can be reduced, improves fill factor.
Further, the thickness of the metallic reflector isReflecting layer metal is 8~14um's to wavelength
The reflectivity of infrared light is more than 99%.
Further, described insulating medium layer is silicon nitride film or silicon oxide film, and thickness is
Further, the thickness of first sacrifice layer and the second sacrifice layer is 1.0~2.5um.
Further, the thickness of first supporting layer is
Further, the thickness of described heat-sensitive layer isHeat-sensitive layer sheet resistance is 50~5000k Ω/, institute
State heat-sensitive layer and use vanadium oxide, the vanadium oxide heat-sensitive layer uses electron beam evaporation, laser evaporation, ion beam depositing or physics gas
The mutually method deposition of deposition, first depositing a layer thickness during deposition isTransition zone, the transition zone uses V/
V2O5/ V films.
It is using the above-mentioned further beneficial effect of technical scheme：When depositing heat-sensitive layer, i.e. deposited oxide vanadium film
When, first deposit one layer of very thin V/V2O5/ V films, in deposition thermosensitive film vanadium oxide, by follow-up high-temperature technology or
Annealing process V/V2O5/ V films form vanadium oxide film, can reduce device noise.
Further, SF is used in step 56、CHF3、O2Or CF4、O2As etching gas, and use endpoint monitoring equipment pair
Etching reaction is monitored.
It is using the above-mentioned further beneficial effect of technical scheme：Thermosensitive film thinner thickness is, it is necessary to use endpoint monitoring
Equipment is etched reaction and terminates monitoring, in case by thermosensitive film, all etching is clean.
Further, first protective layer and the second protective layer are formed using chemical vapor deposition low stress SiNx
's.
Brief description of the drawings
Fig. 1 is that metallic reflector of the present invention and insulating medium layer form schematic diagram；
Fig. 2 is that the first sacrifice layer of the invention forms schematic diagram；
Fig. 3 is that heat-sensitive layer of the present invention forms schematic diagram；
Fig. 4 is that the second sacrifice layer of the invention forms schematic diagram；
Schematic diagrames of the Fig. 5 for the second supporting layer of the invention after graphical；
Fig. 6 is that through hole of the present invention and contact hole form schematic diagram；
Fig. 7 is that metal electrode layer of the present invention forms schematic diagram；
Fig. 8 forms schematic diagram for the second protective layer in the present invention；
Fig. 9 is panel detector structure schematic diagram of the present invention；
In the accompanying drawings, the list of designations represented by each label is as follows：1st, semiconductor pedestal, 2, metallic reflector, 3,
Metal derby, 4, insulating medium layer, the 5, first sacrifice layer, the 6, first supporting layer, 7, heat-sensitive layer, the 8, first protective layer, 9, second is sacrificial
Domestic animal layer, the 10, first anchor point hole, the 11, second anchor point hole, the 12, the 3rd anchor point hole, the 13, second supporting layer, 14, contact hole, 15, logical
Hole, 16, metal electrode layer, 17, metal depressed place, the 18, second protective layer.
Embodiment
The principle and feature of the present invention are described below in conjunction with accompanying drawing, the given examples are served only to explain the present invention, and
It is non-to be used to limit the scope of the present invention.
The present invention proposes a kind of non-refrigerated infrared focal plane probe dot structure, including one includes the half of reading circuit
Conductor pedestal 1 and one has the detector of microbridge supporting construction, the reading circuit shape of the detector and the semiconductor pedestal 1
Into electrical connection, the detector includes metallic reflector 2, insulating medium layer 4, supporting layer, protective layer, metal electrode layer 16 and heat
Photosensitive layer 7, the metallic reflector 2 include several metal derbies 3, and the supporting layer includes the first supporting layer 6 and the second supporting layer
13, the protective layer includes the first protective layer 8 and the second protective layer 18；
Metallic reflector 2 and insulating medium layer 4 are disposed with the reading circuit of the semiconductor pedestal 1；
First supporting layer 6 is arranged on the top of the insulating medium layer 4, and the top of the first supporting layer 6 is set successively
Put heat-sensitive layer 7, the first protective layer 8 and the second supporting layer 9；
The supporting layer 13 of first protective layer 8 and second is provided with contact hole, and the lower end of the contact hole 14 terminates at institute
Heat-sensitive layer 7 is stated, is full of metal electrode and metal depressed place 17 in the contact hole 14, the metal depressed place 17 is arranged on the metal electrode
Top, the metal electrode electrically connects with the heat-sensitive layer 7；
Second supporting layer 13 is provided with anchor point hole, and the anchor point hole includes the first anchor point hole 10 and the 3rd anchor point hole
12, the anchor point hole is straight hole, and bottom is provided with through hole 15, and the lower end of the through hole 15 terminates at the metal derby 3, described logical
The metal electrode and metal depressed place 17 are full of in hole 15 and anchor point hole, metal electrode layer and the metal depressed place 17 is provided with second and protected
Sheath 18.
The insulating medium layer 4 is silicon nitride film, and the supporting layer is silicon nitride film, and the protective layer is silicon nitride
Film, the heat-sensitive layer 7 are vanadium oxide film or thin film of titanium oxide.
The invention further relates to a kind of preparation for preparing above-mentioned novel double-layer non-refrigerated infrared focal plane probe dot structure
Method, comprise the following steps：
Step 1：Including making metallic reflector 2 on reading circuit semiconductor pedestal 1；And metallic reflector 2 is carried out
Graphical treatment, it is graphical after metallic reflector 2 form several metal derbies 3；On the metal derby 3 and semiconductor pedestal 1
Reading circuit electrical connection；Insulating medium layer 4 is deposited on patterned metal reflecting layer 2 is completed；The thickness of the metallic reflector 2
Spend and beReflecting layer metal to wavelength be 8~14um infrared light reflectivity more than 99%.
Step 2：The first sacrifice layer 5, the first supporting layer 6, the and of heat-sensitive layer 7 are sequentially depositing on described insulating medium layer 4
First protective layer 8, first supporting layer 6 are low stress nitride silicon thin film, and first protective layer 8 is that low stress SiNx is thin
Film, the heat-sensitive layer 7 are vanadium oxide or thin film of titanium oxide；The thickness of first supporting layer 6 isDescribed
The thickness of heat-sensitive layer 7 is The sheet resistance of heat-sensitive layer 7 is 50~5000k Ω/, and the heat-sensitive layer 7 is using oxidation
Vanadium, the vanadium oxide heat-sensitive layer are sunk using the method for electron beam evaporation, laser evaporation, ion beam depositing or physical vapour deposition (PVD)
Product, during deposition, first depositing a layer thickness isTransition zone, the transition zone uses V/V2O5/ V films.
Step 3：Processing, the first supporting layer of photoetching 6 and first are patterned to the first supporting layer 6 and the first protective layer 8
Protective layer 8 is until contact the first sacrifice layer 5, after completing graphical treatment, after the first exposed sacrifice layer 5 and graphical treatment
Depositing second sacrificial layer 9 on first protective layer 8, the sacrifice layer of the first sacrifice layer 5 and second adopt 9 and use polyimides or amorphous
Carbon；The thickness of the sacrifice layer 9 of first sacrifice layer 5 and second is 1.0~2.5um.
Step 4：Processing is patterned to the first sacrifice layer 5 and the second sacrifice layer 9, forms the first anchor point hole 10, second
The anchor point hole 12 of anchor point hole 11 and the 3rd, the first anchor point hole 10, the second anchor point hole 11 and the 3rd anchor point hole 12 are straight hole, and
The second supporting layer 13, second supporting layer are deposited on the first sacrifice layer 5 and the second sacrifice layer 9 after completing graphical treatment
13 be silicon nitride film；
Step 5：Through hole is carved by the method for photoetching and etching on the semiconductor pedestal of the second supporting layer 13 deposited
15, the etch-stop of through hole 15 is in the metal derby 3；Photoetching simultaneously etches the second supporting layer 13 and the first protective layer 8 to obtain
Contact hole 14, the etch-stop of contact hole 14 is in the heat-sensitive layer 7；
Step 6：Deposit metal electrodes layer 16 in the contact hole 14 of formation and on graphical rear second supporting layer 13,
In through hole 15 and contact hole 14 after deposit metal electrodes layer 16, depressed place 17 is deposited using the method for chemical vapor deposition, then,
Depressed place 17 is completed using CMP process to grind；
Step 7：And processing is patterned to metal electrode layer 16, obtain metal electricity using the method for photoetching or etching
Pole figure shape, deposits the second protective layer 18 on obtained metal electrode figure, and second protective layer 18 is low stress SiNx
Film；
Step 8:Using the method for photoetching and etching, place is patterned to the second protective layer 18 and the second supporting layer 13
Reason, passivation layer pattern is formed, carries out structure release：The first sacrifice layer 5 and the second sacrifice layer 9 are removed, forms micro-bridge structure.
The foregoing is only presently preferred embodiments of the present invention, be not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent substitution and improvements made etc., it should be included in the scope of the protection.
Claims (10)
1. a kind of novel double-layer non-refrigerated infrared focal plane probe dot structure, including one semiconductor-based comprising reading circuit
The reading circuit of seat and a detector with microbridge supporting construction, the detector and the semiconductor pedestal, which is formed, to be electrically connected
Connect, it is characterised in that the detector include metallic reflector, insulating medium layer, supporting layer, protective layer, metal electrode layer and
Heat-sensitive layer, the metallic reflector include several metal derbies, and the supporting layer includes the first supporting layer and the second supporting layer, institute
Stating protective layer includes the first protective layer and the second protective layer；
Metallic reflector and insulating medium layer are disposed with the reading circuit of the semiconductor pedestal；
First supporting layer is arranged on the top of the insulating medium layer, and first supporting layer is sequentially arranged above temperature-sensitive
Layer, the first protective layer and the second supporting layer；
First protective layer and the second supporting layer are provided with contact hole, and the lower end of the contact hole terminates at the heat-sensitive layer,
Metal electrode and metal depressed place are full of in the contact hole, the metal depressed place is arranged on the top of the metal electrode, the metal
Electrode electrically connects with the heat-sensitive layer；
Second supporting layer is provided with anchor point hole, and the anchor point hole includes the first anchor point hole and the 3rd anchor point hole, the anchor point
Hole is straight hole, and bottom is provided with through hole, and the lower end of the through hole terminates at the metal derby, is full of in through hole and the anchor point hole
Metal electrode and the metal depressed place, metal electrode layer and the metal depressed place are provided with the second protective layer.
2. novel double-layer non-refrigerated infrared focal plane probe dot structure according to claim 1, it is characterised in that institute
It is silicon nitride film to state insulating medium layer, and the supporting layer is silicon nitride film, and the protective layer is silicon nitride film, the heat
Photosensitive layer is vanadium oxide film or thin film of titanium oxide.
A kind of 3. preparation side of novel double-layer non-refrigerated infrared focal plane probe dot structure as claimed in claim 1 or 2
Method, it is characterised in that comprise the following steps：
Step 1：Metallic reflector is made on comprising reading circuit semiconductor pedestal；And metallic reflector is patterned
Processing, it is graphical after metallic reflector form several metal derbies；The metal derby and the reading circuit on semiconductor pedestal
Electrical connection；Insulating medium layer is deposited on patterned metal reflecting layer is completed；
Step 2：The first sacrifice layer, the first supporting layer, heat-sensitive layer and the first protection are sequentially depositing on described insulating medium layer
Layer, first supporting layer are low stress nitride silicon thin film, and first protective layer is low stress nitride silicon thin film, the temperature-sensitive
Layer is vanadium oxide or thin film of titanium oxide；
Step 3：Processing, the supporting layer of photoetching first and the first protective layer are patterned to the first supporting layer and the first protective layer
Until the first sacrifice layer of contact, after completing graphical treatment, the first protection after the first exposed sacrifice layer and graphical treatment
Depositing second sacrificial layer on layer, first sacrifice layer and the second sacrifice layer use polyimides or amorphous carbon；
Step 4：Be patterned processing to the first sacrifice layer and the second sacrifice layer, formed the first anchor point hole, the second anchor point hole and
3rd anchor point hole, the first anchor point hole, the second anchor point hole and the 3rd anchor point hole are straight hole, and after graphical treatment is completed
The first sacrifice layer and the second sacrifice layer on deposit the second supporting layer, second supporting layer is silicon nitride film；
Step 5：Through hole, through hole are carved by the method for photoetching and etching on the semiconductor pedestal of the second supporting layer deposited
Etch-stop is in the metal derby；Photoetching simultaneously etches the second supporting layer and the first protective layer to obtain contact hole, contact hole
Etch-stop is in the heat-sensitive layer；
Step 6：Deposit metal electrodes layer in the contact hole of formation and on graphical rear second supporting layer, in deposited metal electricity
In through hole and contact hole after the layer of pole, depressed place is deposited using the method for chemical vapor deposition, then, utilizes chemical-mechanical planarization
Technique completes depressed place grinding；
Step 7：And processing is patterned to metal electrode layer, metal electrode figure is obtained using the method for photoetching or etching,
The second protective layer is deposited on obtained metal electrode figure, second protective layer is low stress nitride silicon thin film；
Step 8:Using the method for photoetching and etching, processing is patterned to the second protective layer and the second supporting layer, is formed blunt
Change layer pattern, carry out structure release：The first sacrifice layer and the second sacrifice layer are removed, forms micro-bridge structure.
4. the preparation method of novel double-layer non-refrigerated infrared focal plane probe dot structure according to claim 3, its
It is characterised by, the thickness of the metallic reflector isInfrared light of the reflecting layer metal to wavelength for 8~14um
Reflectivity more than 99%.
5. the preparation method of novel double-layer non-refrigerated infrared focal plane probe dot structure according to claim 3, its
It is characterised by, described insulating medium layer is silicon nitride film or silicon oxide film, and thickness is
6. the preparation method of novel double-layer non-refrigerated infrared focal plane probe dot structure according to claim 3, its
It is characterised by, the thickness of first sacrifice layer and the second sacrifice layer is 1.0~2.5um.
7. the preparation method of novel double-layer non-refrigerated infrared focal plane probe dot structure according to claim 3, its
It is characterised by, the thickness of first supporting layer is
8. the preparation method of novel double-layer non-refrigerated infrared focal plane probe dot structure according to claim 3, its
It is characterised by, the thickness of described heat-sensitive layer isHeat-sensitive layer sheet resistance is 50~5000k Ω/, the temperature-sensitive
Layer uses vanadium oxide, and the vanadium oxide heat-sensitive layer uses electron beam evaporation, laser evaporation, ion beam depositing or physical vapour deposition (PVD)
Method deposition, first depositing a layer thickness during deposition isTransition zone, the transition zone uses V/V2O5/ V is thin
Film.
9. the preparation method of novel double-layer non-refrigerated infrared focal plane probe dot structure according to claim 3, its
It is characterised by, SF is used in step 56、CHF3、O2Or CF4、O2As etching gas, and it is anti-to etching using endpoint monitoring equipment
It should be monitored.
10. the preparation method of novel double-layer non-refrigerated infrared focal plane probe dot structure according to claim 3, its
It is characterised by, first protective layer and the second protective layer are formed using chemical vapor deposition low stress SiNx.
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| JPWO2021117818A1 (en) * | 2019-12-11 | 2021-06-17 | ||
| CN112071956B (en) * | 2020-09-08 | 2022-08-16 | 山西国惠光电科技有限公司 | Preparation process of novel InGaAs infrared focal plane detector |
| CN113049115B (en) * | 2021-01-29 | 2022-11-22 | 武汉高芯科技有限公司 | Pixel-level packaged uncooled infrared detector and manufacturing method thereof |
| CN113720482A (en) * | 2021-03-26 | 2021-11-30 | 北京北方高业科技有限公司 | Infrared detector pixel and infrared detector based on CMOS (complementary metal oxide semiconductor) process |
| CN113532661A (en) * | 2021-07-12 | 2021-10-22 | 北京北方高业科技有限公司 | Single-layer infrared focal plane detector |
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| CN102169919A (en) * | 2011-03-17 | 2011-08-31 | 上海集成电路研发中心有限公司 | Detector and manufacturing method thereof |
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| CN102169919A (en) * | 2011-03-17 | 2011-08-31 | 上海集成电路研发中心有限公司 | Detector and manufacturing method thereof |
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