CN106800271B - A kind of non-refrigerated infrared focal plane probe dot structure and preparation method thereof - Google Patents
A kind of non-refrigerated infrared focal plane probe dot structure and preparation method thereof Download PDFInfo
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- CN106800271B CN106800271B CN201710053126.9A CN201710053126A CN106800271B CN 106800271 B CN106800271 B CN 106800271B CN 201710053126 A CN201710053126 A CN 201710053126A CN 106800271 B CN106800271 B CN 106800271B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 18
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- 239000002184 metal Substances 0.000 claims abstract description 65
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- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical group [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 15
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00142—Bridges
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/005—Bulk micromachining
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0207—Bolometers
Abstract
The present invention relates to a kind of non-refrigerated infrared focal plane probe dot structure preparation methods, and metal layer is made on comprising reading circuit semiconductor pedestal；Insulating medium layer is deposited on patterned metal layer is completed；The first sacrificial layer, the first supporting layer, heat-sensitive layer and the first protective layer are sequentially depositing on insulating medium layer; the first supporting layer of photoetching and the first protective layer are until the first sacrificial layer of contact; depositing second sacrificial layer on first protective layer, and deposit the second supporting layer on the first sacrificial layer and the second sacrificial layer for completing graphical treatment；Through-hole is carved by the method for photoetching and etching on the semiconductor pedestal of the second supporting layer deposited；Photoetching or the second supporting layer of etching and the first protective layer are to obtain contact hole, and contact hole photoetching and etch-stop are in heat-sensitive layer；With deposit metal electrodes layer on the second supporting layer in contact hole, the second protective layer is deposited on metal electrode figure, utilizes the second protective layer of photolithography patterning and the second supporting layer, finally, carries out structure release.
Description
Technical field
The invention belongs to the MEMS technique manufacturing fields in semiconductor technology, and in particular to a kind of uncooled ir
Focus planar detector and preparation method thereof.
Background technology
Uncooled infrared detection technology is that the infra-red radiation (IR) of external object is perceived and turned without refrigeration system
Electric signal is melted into after processing in the technology of display terminal output, can be widely applied to national defence, space flight, medicine, production monitoring etc.
Various fields.Non-refrigerated infrared focal plane probe has light weight, volume since it can work under room temperature state
Small, long lifespan, the advantages that at low cost, power is small, startup is fast and stability is good, meet civilian infrared system and part are military red
There is an urgent need to development was swift and violent in recent years to Long Wave Infrared Probe for external system.Non-refrigerated infrared detector mainly includes surveying
Bolometer, pyroelectricity and thermopile detector etc., wherein the heat of the microbolometer based on MEMS (MEMS) manufacturing process
(Micro-bolometer) infrared detector is counted due to its speed of response height, manufacture craft it is simple and with IC manufacturing work
Skill is compatible with, and has relatively low cross-talk and relatively low 1/f noise, and higher frame speed works without chopper, convenient for large-scale production
The advantages that, it is one of mainstream technology of non-refrigerated infrared detector.
Micro-metering bolometer (Micro-bolometer) be based on the material with sensitive characteristic when temperature changes
A kind of non-refrigerated infrared detector that resistance value occurs corresponding change and manufactures.Heat during work to being supported on heat insulating construction
Quick resistance both ends apply fixed bias voltage or current source, temperature change caused by incident IR radiation cause thermistor to hinder
Value reduces, so as to which electric current, voltage be made to change, and by the variation of reading circuit (ROIC) reading electric signal.As temperature-sensitive electricity
The material of resistance must have higher temperature-coefficient of electrical resistance (TCR), relatively low 1/f noise, appropriate resistance value and the electricity stablized
Performance and the requirement such as easily prepared.The thermo-sensitive material of mainstream includes vanadium oxide (VOx), non-crystalline silicon and high-temperature superconductor at present
Material (YBCO) etc., in addition also about research report of the materials such as titanium oxide, nickel oxide as micro-metering bolometer thermo-sensitive material
Road.
The unit generally use cantilever beam micro-bridge structure of non-refrigerate infrared focal plane array seeker, is discharged using sacrificial layer
Technique forms microbridge support construction, and the thermo-sensitive material in support platform is connected by microbridge with substrate reading circuit.Now to visiting
The resolution requirement for surveying device is higher and higher, and array request is increasing, and such as the size constancy of fruit chip, then pixel is less and less,
It can be higher and higher to the flatness requirement of pixel；Both sides micro-bridge structure needs two layers of sacrificial layer, the energy that two layers of sacrificial layer absorbs
It is more, but requirement higher of two layers of sacrificial layer to flatness；But conventional double technique sacrificial layer needs etching twice, due to
The reason of etched first layer sacrificial layer, crystal column surface out-of-flatness after having etched influence the coating of second layer sacrificial layer.
With the gradually diminution of pixel dimension, the infrared energy being incident in infrared image element is contracted in a manner of square law
It is small.When pixel dimension drops to 17 microns by 25 microns, projectile energy reduces by one times；When pixel is reduced to 12 microns, enter
Penetrate energy is only 25 microns 25%.
Invention content
The present invention provides a kind of uncooled ir coke of two-layer process sacrificial layer and puts down for the deficiencies in the prior art
Surface detector preparation method, when coating second layer sacrificial layer, first layer is etched not yet, and crystal column surface is very smooth, after
Etching can be carried out continuously by continuing two layers of sacrificial layer.
The technical solution that the present invention solves above-mentioned technical problem is as follows：A kind of non-refrigerated infrared focal plane probe pixel knot
Preparation Method is configured, is included the following steps：
Step 1：Metal layer is made on comprising reading circuit semiconductor pedestal；And processing is patterned to metal layer,
Metal layer after graphical forms metallic reflector and metal derby；Metal derby is electrically connected with the reading circuit on semiconductor pedestal；
Insulating medium layer is deposited on patterned metal reflecting layer is completed；
Step 2：The first sacrificial layer, the first supporting layer, heat-sensitive layer and first are sequentially depositing on the insulating medium layer
Protective layer, first supporting layer be silicon nitride film, first protective layer be low stress nitride silicon thin film, the heat-sensitive layer
For vanadium oxide or thin film of titanium oxide；
Step 3：Processing is patterned to the first supporting layer and the first protective layer, the first supporting layer of photoetching and first protect
Sheath is until contact the first sacrificial layer, after completing graphical treatment, first after the first exposed sacrificial layer and graphical treatment
Depositing second sacrificial layer on protective layer, first sacrificial layer and the second sacrificial layer use polyimides or amorphous carbon；
Step 4：It is patterned processing to the first sacrificial layer and the second sacrificial layer simultaneously, and the first anchor point hole of formation, the
Two anchor point holes and third anchor point hole, the section in the first anchor point hole, the second anchor point hole and third anchor point hole is trapezium structure,
And the second supporting layer is deposited on the first sacrificial layer and the second sacrificial layer for completing graphical treatment, second supporting layer is nitrogen
SiClx film；
Step 5：Through-hole is carved by the method for photoetching and etching on the semiconductor pedestal for deposited the second supporting layer, is led to
Pitting quarter terminates at metal derby；
Step 6：Photoetching simultaneously etches the second supporting layer and the first protective layer to obtain contact hole, the etching of contact hole
Terminate at the heat-sensitive layer；
Step 7：Depositing electrode on second supporting layer in the contact hole of formation and after graphical, and figure is carried out to electrode
Shapeization processing, electrode pattern is obtained using the method for photoetching or etching；The second protective layer, institute are deposited on obtained electrode pattern
The second protective layer is stated as low stress nitride silicon thin film；
Step 8:Using photoetching and the second protective layer of etching and the second supporting layer, passivation layer pattern is formed, structure is carried out and releases
It puts, removes the first sacrificial layer and the second sacrificial layer, form micro-bridge structure.
A kind of advantageous effect of novel non-refrigerated infrared focal plane probe dot structure preparation method is in the present invention：Make
With two layers of sacrificial layer, the energy higher of absorption, and before coating second layer sacrificial layer, first layer sacrificial layer is etched not yet,
Crystal column surface is very smooth, and follow-up two layers of sacrificial layer can be carried out continuously etching.
Further, the thickness of metallic reflector isReflecting layer metal is the infrared of 8~14um to wavelength
The reflectivity of light is more than 99%.
Further, the insulating medium layer is silicon nitride film or silicon oxide film, and thickness is
Further, the thickness of first sacrificial layer and the second sacrificial layer is 1.0~2.5um.
Further, the thickness of first supporting layer is
Further, the thickness of the heat-sensitive layer isHeat-sensitive layer sheet resistance is 50~5000K Ω, described
Heat-sensitive layer uses vanadium oxide, and the vanadium oxide heat-sensitive layer uses electron beam evaporation, laser evaporation, ion beam depositing or physical vapor
The method deposition of deposition, during deposition, first depositing a layer thickness isTransition zone, the transition zone use V/V2O5/
V films.
Advantageous effect using above-mentioned further technical solution is：When depositing heat-sensitive layer, i.e. deposited oxide vanadium film
When, first deposit one layer of very thin V/V2O5/ V films, in deposition thermosensitive film vanadium oxide, by subsequent high-temperature technology or
Annealing process V/V2O5/ V films form vanadium oxide film, can reduce device noise.
Further, SF is used in step 66、CHF3、O2Or CF4、O2As etching gas, and use endpoint monitoring equipment pair
Etching reaction is monitored.
Advantageous effect using above-mentioned further technical solution is：Thermosensitive film thinner thickness needs to use endpoint monitoring
Equipment is etched reaction and terminates monitoring, in case by thermosensitive film, all etching is clean.
Further, first protective layer and the second protective layer are formed using chemical vapor deposition low stress SiNx
's.
It is detected the invention further relates to a kind of using non-refrigerating infrared focal plane novel made of preparation method as described above
Device dot structure, technical solution are as follows：A kind of novel non-refrigerated infrared focal plane probe includes the half of reading circuit including one
Conductor pedestal and a detector with microbridge support construction, the reading circuit of the detector and the semiconductor pedestal are formed
Electrical connection；The detector includes metal layer, insulating medium layer, supporting layer, protective layer, metal electrode layer and heat-sensitive layer, described
Metal layer includes metallic reflector and metal derby, and the supporting layer includes the first supporting layer and the second supporting layer, the protective layer
Including the first protective layer and the second protective layer；
Metallic reflector and insulating medium layer are disposed on the reading circuit of the semiconductor pedestal；
First supporting layer is arranged on the top of the insulating medium layer, and first supporting layer is sequentially arranged above heat
Photosensitive layer, the first protective layer and the second supporting layer；
First protective layer and the second supporting layer are equipped with contact hole, and the lower end of the contact hole terminates at the temperature-sensitive
Layer, the contact hole is interior to be full of the metal electrode；
Through-hole is additionally provided on second supporting layer, the lower end of the through-hole terminates and the metal derby, in the through-hole
Full of the metal electrode；The metal electrode layer is equipped with the second protective layer.
Further, the insulating medium layer is silicon nitride film, and the supporting layer is silicon nitride film, and the protective layer is
Silicon nitride film, the heat-sensitive layer are vanadium oxide film or thin film of titanium oxide.
The advantageous effect of novel non-refrigerated infrared focal plane probe is in the present invention：It is inverted using microbridge, below microbridge
Bridge pier is not supported, structure is not easy to be deformed, and to Stress Control tolerance higher, technique is easier to control；Employ two
Layer micro-bridge structure, first layer are infrared radiation absorption structure, and the second layer is thermal isolation micro-bridge structure, effectively promote the filling of pixel
Coefficient and the absorption efficiency for improving incident IR radiation.
Description of the drawings
Fig. 1 forms schematic diagram for metallic reflector of the present invention and insulating medium layer；
Fig. 2 is that the first sacrificial layer of the invention forms schematic diagram；
Fig. 3 forms schematic diagram for heat-sensitive layer of the present invention；
Fig. 4 is that the second sacrificial layer of the invention forms schematic diagram；
Fig. 5 is the schematic diagram after the second supporting layer of the invention is graphical；
Fig. 6 forms schematic diagram for through-hole of the present invention and contact hole；
Fig. 7 forms schematic diagram for metal electrode layer of the present invention；
Fig. 8 is panel detector structure schematic diagram of the present invention；
In the accompanying drawings, the list of designations represented by each label is as follows：1st, semiconductor pedestal, 2, metallic reflector, 3,
Metal derby, 4, insulating medium layer, the 5, first sacrificial layer, the 6, first supporting layer, 7, heat-sensitive layer, the 8, first protective layer, 9, second is sacrificial
Domestic animal layer, the 10, second supporting layer, 11, through-hole, 12, contact hole, 13, metal electrode layer, the 14, second protective layer, 15, passivation layer figure
Shape, the 16, first anchor point hole, the 17, second anchor point hole, 18, third anchor point hole.
Specific embodiment
The principle and features of the present invention will be described below with reference to the accompanying drawings, and the given examples are served only to explain the present invention, and
It is non-to be used to limit the scope of the present invention.
Embodiment 1
The present invention proposes a kind of non-refrigerated infrared focal plane probe dot structure preparation method, includes the following steps：
Step 1：Metal layer is made on comprising reading circuit semiconductor pedestal 1；And place is patterned to metal layer
Reason, it is graphical after metal layer form metallic reflector 2 and metal derby 3；Metal derby 3 and the reading circuit on semiconductor pedestal 1
Electrical connection；Insulating medium layer 4 is deposited on patterned metal reflecting layer 2 is completed；The thickness of metallic reflector 2 isReflecting layer metal to wavelength be 8~14um infrared light reflectivity more than 99%；The insulation is situated between
Matter layer 4 is silicon nitride film or silicon oxide film, and thickness is
Step 2：The first sacrificial layer 5, the first supporting layer 6,7 and of heat-sensitive layer are sequentially depositing on the insulating medium layer 4
First protective layer 8, first supporting layer 6 be silicon nitride film, first protective layer 8 be low stress nitride silicon thin film, institute
Heat-sensitive layer 7 is stated as vanadium oxide or thin film of titanium oxide, the thickness of 5 and second sacrificial layer 9 of the first sacrificial layer is 1.0~2.5um；
The thickness of first supporting layer 6 isThe thickness of the heat-sensitive layer 7 is7 sheet resistance of heat-sensitive layer
For 50~5000K Ω, the heat-sensitive layer 7 uses vanadium oxide, the vanadium oxide heat-sensitive layer using electron beam evaporation, laser evaporation,
The method of ion beam depositing or physical vapour deposition (PVD) deposits, and during deposition, first depositing a layer thickness isTransition zone,
The transition zone uses V/V2O5/ V films, as shown in Figure 2,3.
Step 3：Processing, the first supporting layer of photoetching 6 and first are patterned to the first supporting layer 6 and the first protective layer 8
Protective layer 8 is until contact the first sacrificial layer 5, after completing graphical treatment, after the first exposed sacrificial layer 5 and graphical treatment
Depositing second sacrificial layer 9 on first protective layer 8,5 and second sacrificial layer 9 of the first sacrificial layer use polyimides or amorphous
Carbon, as shown in Figure 4.
Step 4：Processing is patterned to the first sacrificial layer 5 and the second sacrificial layer 9 simultaneously, and forms the first anchor point hole
16th, the second anchor point hole 17 and third anchor point hole 18, the first anchor point hole 16, the second anchor point hole 17 and third anchor point hole 18 are cutd open
Face is trapezium structure, and deposits the second supporting layer on the first sacrificial layer 5 and the second sacrificial layer 9 for completing graphical treatment
10, second supporting layer 10 is silicon nitride film, as shown in Figure 5.
Step 5：It is carved and led to by the method for photoetching and etching above the semiconductor pedestal of the second supporting layer 10 deposited
Hole 11,11 etch-stop of through-hole is in metal derby 3, as shown in Figure 6.
Step 6：Photoetching etches the second supporting layer 10 and the first protective layer 8 to obtain contact hole 12,12 photoetching of contact hole
With etch-stop in the heat-sensitive layer 7；Use SF6、CHF3、O2Or CF4、O2As etching gas, and use endpoint monitoring equipment
Etching reaction is monitored, as shown in Figure 6.
Step 7：Deposit metal electrodes layer on second supporting layer 10 in the contact hole 12 of formation and after graphical, and it is right
Metal electrode layer 13 is patterned processing, and metal electrode figure is obtained using the method for photoetching or etching；In obtained metal
The second protective layer 14 is deposited on electrode pattern, second protective layer 14 is low stress nitride silicon thin film；First protective layer 8
All it is to be formed using chemical vapor deposition low stress SiNx with the second protective layer 14, as shown in Figure 7.
Step 8:Using photoetching and the second protective layer 14 of etching and the second supporting layer 10, passivation layer pattern is formed, is tied
Structure discharges, and removes the first sacrificial layer and the second sacrificial layer, forms micro-bridge structure, as shown in Figure 8.
Embodiment 2
As different from Example 1, after insulating medium layer is deposited, graphical insulating medium layer, removing is covered in gold
Belong to the dielectric on block, as shown in Figure 1, there is no need to etch away the insulation on metal derby in subsequent etching vias in this way
Medium.
Using above-mentioned novel non-refrigerated infrared focal plane probe dot structure preparation method, the invention also provides one
The novel non-refrigerated infrared focal plane probe of kind, as shown in figure 8, being inverted using microbridge, structure is not allowed to be also easy to produce deformation, to stress
Tolerance higher is controlled, technique is easier to control；Two layers of micro-bridge structure is employed, first layer is infrared radiation absorption structure, the
Two layers are thermal isolation micro-bridge structure, effectively promote the fill factor of pixel and improve the absorption efficiency of incident IR radiation.
A kind of novel non-refrigerated infrared focal plane probe dot structure, the semiconductor pedestal for including reading circuit including one
1 and a detector with microbridge support construction, the reading circuit of the detector and the semiconductor pedestal, which is formed, to be electrically connected；
The detector includes metal layer, dielectric 4, supporting layer, protective layer, metal electrode layer and heat-sensitive layer, the supporting layer packet
The first supporting layer 6 and the second supporting layer 10 are included, the protective layer includes the first protective layer 8 and the second protective layer 14；
Metal layer and insulating medium layer are disposed on the reading circuit of the semiconductor pedestal, the metal layer includes
Metallic reflector 2 and metal derby 3；
First supporting layer 6 is arranged on the top of the insulating medium layer 4, and 6 top of the first supporting layer is set successively
Put heat-sensitive layer 7, the first protective layer 8 and the second supporting layer 10；
First protective layer, 8 and second supporting layer 10 is equipped with contact hole 12, and the lower end of the contact hole 12 terminates at
The heat-sensitive layer 7, the contact hole 12 is interior to be full of the metal electrode；
Through-hole 11 is additionally provided on second supporting layer 10, the lower end of the through-hole 11 terminates and the metal derby 2, described
The metal electrode is full of in through-hole 11；The metal electrode layer 13 is equipped with the second protective layer 14.
The insulating medium layer 4 is silicon nitride film, and the supporting layer is silicon nitride film, and the protective layer is silicon nitride
Film, the heat-sensitive layer 7 are vanadium oxide film or thin film of titanium oxide.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of non-refrigerated infrared focal plane probe dot structure preparation method, which is characterized in that include the following steps：
Step 1：Metal layer is made on comprising reading circuit semiconductor pedestal；And processing, figure are patterned to metal layer
Metal layer after change forms metallic reflector and metal derby；Metal derby is electrically connected with the reading circuit on semiconductor pedestal；Complete
Insulating medium layer is deposited on into patterned metal layer；
Step 2：The first sacrificial layer, the first supporting layer, heat-sensitive layer and the first protection are sequentially depositing on the insulating medium layer
Layer, first supporting layer be low stress nitride silicon thin film, first protective layer be low stress nitride silicon thin film, the temperature-sensitive
Layer is vanadium oxide or thin film of titanium oxide；
Step 3：Processing, the first supporting layer of photoetching and the first protective layer are patterned to the first supporting layer and the first protective layer
Until the first sacrificial layer of contact, after completing graphical treatment, the first protection after the first exposed sacrificial layer and graphical treatment
Depositing second sacrificial layer on layer, first sacrificial layer and the second sacrificial layer use polyimides or amorphous carbon；
Step 4：Processing is patterned to the first sacrificial layer and the second sacrificial layer, and forms the first anchor point hole, the second anchor point hole
With third anchor point hole, the section in the first anchor point hole, the second anchor point hole and third anchor point hole is trapezium structure, and is completed
The second supporting layer is deposited on the first sacrificial layer and the second sacrificial layer of graphical treatment, second supporting layer is that silicon nitride is thin
Film；
Step 5：Through-hole, through-hole etching are carved by the method for photoetching and etching on the semiconductor pedestal for deposited two supporting layers
Terminate at the metal derby；
Step 6：Photoetching simultaneously etches the second supporting layer and the first protective layer to obtain contact hole, contact hole photoetching and etching
Terminate at the heat-sensitive layer；
Step 7：Deposit metal electrodes layer on second supporting layer in the contact hole of formation and after graphical, and to metal electrode
Layer is patterned processing, and metal electrode figure is obtained using the method for photoetching or etching；On obtained metal electrode figure
The second protective layer is deposited, second protective layer is low stress nitride silicon thin film；
Step 8:Using photoetching and the second protective layer of etching and the second supporting layer, passivation layer pattern is formed, carries out structure release：
The first sacrificial layer and the second sacrificial layer are removed, forms micro-bridge structure.
2. non-refrigerated infrared focal plane probe dot structure preparation method according to claim 1, which is characterized in that gold
Belong to reflecting layer thickness beReflecting layer metal to wavelength be 8~14um infrared light reflectivity 99%
More than.
3. non-refrigerated infrared focal plane probe dot structure preparation method according to claim 1, which is characterized in that institute
The insulating medium layer stated is silicon nitride film or silicon oxide film, and thickness is
4. non-refrigerated infrared focal plane probe dot structure preparation method according to claim 1, which is characterized in that institute
The thickness for stating the first sacrificial layer and the second sacrificial layer is 1.0~2.5um.
5. non-refrigerated infrared focal plane probe dot structure preparation method according to claim 1, which is characterized in that institute
The thickness for stating the first supporting layer is
6. non-refrigerated infrared focal plane probe dot structure preparation method according to claim 1, which is characterized in that institute
The thickness for the heat-sensitive layer stated isHeat-sensitive layer sheet resistance is 50~5000K Ω, and the heat-sensitive layer uses vanadium oxide,
The vanadium oxide heat-sensitive layer is sunk using the method deposition of electron beam evaporation, laser evaporation, ion beam depositing or physical vapour deposition (PVD)
During product, first depositing a layer thickness isTransition zone, the transition zone use V/V2O5/ V films.
7. non-refrigerated infrared focal plane probe dot structure preparation method according to claim 1, which is characterized in that step
SF is used in rapid six6、CHF3、O2Or CF4、O2Etching reaction is monitored as etching gas, and using endpoint monitoring equipment.
8. non-refrigerated infrared focal plane probe dot structure preparation method according to claim 1, which is characterized in that institute
Stating the first protective layer and the second protective layer is formed using chemical vapor deposition low stress SiNx.
9. a kind of non-refrigerated infrared focal plane probe dot structure, including a semiconductor pedestal comprising reading circuit and a tool
There is the detector of microbridge support construction, the detector is electrically connected with the reading circuit formation of the semiconductor pedestal；Its feature
It is, the detector includes metal layer, insulating medium layer, supporting layer, protective layer, metal electrode layer and heat-sensitive layer, the gold
Belong to layer and include metallic reflector and metal derby, the supporting layer includes the first supporting layer and the second supporting layer, the protective layer packet
Include the first protective layer and the second protective layer；
Metallic reflector and insulating medium layer are disposed on the reading circuit of the semiconductor pedestal；
First supporting layer is arranged on the top of the insulating medium layer, and first supporting layer is sequentially arranged above temperature-sensitive
Layer, the first protective layer and the second supporting layer；
First protective layer and the second supporting layer are equipped with contact hole, and the lower end of the contact hole terminates at the heat-sensitive layer,
It is electrically connected in the contact hole full of metal electrode, the metal electrode with the heat-sensitive layer；
Through-hole is additionally provided on second supporting layer, the lower end of the through-hole terminates and the metal derby, is full of in the through-hole
The metal electrode；The metal electrode layer is equipped with the second protective layer.
10. non-refrigerated infrared focal plane probe dot structure according to claim 9, which is characterized in that the insulation
Dielectric layer is silicon nitride film, and the supporting layer is silicon nitride film, and the protective layer is silicon nitride film, and the heat-sensitive layer is
Vanadium oxide film or thin film of titanium oxide.
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