CN101357747A - Preparation method of no-refrigeration infrared focal plane micro-bridge structure - Google Patents
Preparation method of no-refrigeration infrared focal plane micro-bridge structure Download PDFInfo
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- CN101357747A CN101357747A CNA2008100460832A CN200810046083A CN101357747A CN 101357747 A CN101357747 A CN 101357747A CN A2008100460832 A CNA2008100460832 A CN A2008100460832A CN 200810046083 A CN200810046083 A CN 200810046083A CN 101357747 A CN101357747 A CN 101357747A
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Abstract
The invention relates to a method for preparing a non-cooling infrared focal plane micro-bridge structure, which belongs to the field of non-cooling infrared probing technology, relating to a structure and a preparing method of an MEMS device. The invention has the advantages that by means of single film growth craft, supporting structures of a pier, a bridge leg, and a deck are accomplished, thus greatly lowering the difficulty and complicity of the craft; the pier, the bridge leg, and the deck are formed into a trinity, thus assuring the mechanical support of the whole micro bridge to be firmer and to have higher stability; meanwhile, the pier manufactured by means of the single film growth craft has a hollow shape, thus ensuring that the manufacturing process of the electrical channel of the micro-bridge structure is more simple, without the need of tapping in the pier; only simple photoetching craft is needed to guarantee the connection between the electrode at the upper end and the electrode at the lower end. Compared with the prior art, the non-cooling infrared focal plane micro-bridge structure with firmer mechanical property, high stability and more guaranteed electrical connection can be prepared by the method; meanwhile, the preparing craft is simplified; the manufacturing cost is lowered.
Description
Technical field
A kind of preparation method of no-refrigeration infrared focal plane micro-bridge structure belongs to non-refrigeration infrared detection technique field, relates to MEMS device architecture and preparation method.
Background technology
Infrared detection technique has obtained using widely aspect civil and military as the additional and expansion to human sense organ.The photon type Infrared Detectors of comparative maturity has been applied to fields such as communication, medical science, military affairs and industry widely at present, but necessary cryogenic cooling during because of its work, cause whole system huge, complex structure and cost are higher, thereby can't apply on a large scale.The development of large scale integrated circuit technology makes the development of non-refrigeration infrared detector become possibility, the uncooled infrared focal plane array technology has become the most popular direction of infrared detection technique at present, this technology makes us have the ability just to obtain to have the very Infrared Detectors of hypersensitivity energy at normal temperatures, in addition, its cost is low, volume is little, in light weight, power consumption is little and response wave band is wide advantage, makes its large-scale marketization become possibility.
The basic functional principle of no-refrigeration infrared focal plane device is, the infra-red radiation of target object is absorbed by the infrared absorption layer of no-refrigeration infrared focal plane device, thereby cause that thermo-responsive film temperature raises, because thermo-responsive film has temperature-resistance (TCR) characteristic, its resistance will change, and this variation is passed to reading circuit, thereby detect the variation of this resistance value, the final detection that realizes infra-red radiation by electricity passage wherein.
The no-refrigeration infrared focal plane device be the infrared acquisition that will realize under the room temperature at all, thereby the design of its detecting structure just becomes the key of entire device.A kind of for a long time typical detecting structure adopts micro-bridge structure exactly.Whole microbridge is the micro-cavity structure that directly is produced on the device substrate, is made up of bridge pier, bridge leg and bridge floor, and bridge pier supports bridge leg and bridge floor, and bridge leg and bridge floor are suspended on the substrate, and on bridge floor deposit thermosensitive film and infrared acquisition film.When device was worked, the variation of target infra-red radiation was reflected to the variation of thermo-responsive film resistor so, was produced on electricity passage in the microbridge and this variation is delivered to the rear end reading circuit promptly detected echo signal.Therefore, micro-bridge structure plays crucial effects in non-refrigeration infrared device: 1, mechanical support effect: it supports the sensitive detection unit of device, and this requires it to have good fastness and stability; 2, electricity conduction pathway: the electronic signal that it forms the infra-red radiation that detects passes to the reading circuit on the substrate; 3, thermal conduction path: in infrared focal plane device, thermal loss mainly carries out for three kinds with heat conduction, thermal convection current and heat radiation, and thermally sensitive layer is the principal mode of thermal loss by heat insulation structure to the conduction of the heat of substrate, and this requires focal plane device to be optimized design to make it reducing thermal loss under the system requirements satisfying as far as possible to heat insulation structure.
Play crucial effects just because of micro-bridge structure in entire device, its preparation method also enjoys attention all the time.A kind of preparation method of traditional non-refrigerating infrared focal plane micro-bridge structure is: at first make one deck electrode material on backing material; Grow the then film of certain thickness satisfactory mechanical property is etched into the bridge pier shape; The sacrificial layer material of growing subsequently, and contour with bridge pier; Continue on this basis to make bridge leg and bridge floor, and link with bridge pier; On bridge floor, also to make one deck electrode material, and will in bridge pier, carry out necessary hole opening technology, can be communicated with the electrode on the substrate to guarantee the electrode on the bridge floor, to form the electricity passage of device.This preparation method's outstanding feature is: the making of its bridge pier, bridge leg and bridge floor needs just can finish through twice thin film growth process, it is non-one, and its initial bridge pier that generates is solid, has just carried out perforate in the later stage in by etching technics.Just because of its this characteristics, cause there is some intrinsic defectives: at first owing to bridge pier, bridge leg and bridge floor are not finished in a thin film growth process, therefore its mutual connectivity robustness is inevitable bad, problems such as not firm, that contact stress is big very easily appear connecting, finally cause bridge floor and bridge leg the distortion in addition come off, from but component failure; Secondly, this preparation method must leave through hole on solid bridge pier, and the surface area of bridge pier is less for its height in general, therefore the technology difficulty of perforate is very big, the electricity channel connection that differs and guarantee device surely in case this situation occurs, also can make component failure.
Summary of the invention
The preparation method who the purpose of this invention is to provide a kind of no-refrigeration infrared focal plane micro-bridge structure, the supporting construction of its bridge pier, bridge leg and bridge floor is finished by a film growth, and saved employing bridge pier opening step, the mechanical support of whole microbridge is more firm, electricity is communicated with more guaranteed, and greatly reduces technology difficulty and process complexity.
Detailed technology scheme of the present invention is:
A kind of preparation method of no-refrigeration infrared focal plane micro-bridge structure as Fig. 3-shown in Figure 4, may further comprise the steps:
Step 2, growth sacrifice layer 4, etching is exposed lower end electrode 3.
The supporting layer 5 of step 3, deposition micro-bridge structure, etching spills lower end electrode 3, and etching is made bridge leg and bridge floor.Because the supporting layer film thickness is much smaller than the thickness of thin film sacrificial layer, therefore behind the deposit supporting layer in sacrifice layer etching spill in the through hole of lower end electrode 3 and will form hollow pier, and will form a plane on sacrifice layer, this plane will form the bridge leg that connects bridge pier and bridge floor after etching.
After step 4, making and the upper end electrode 6 that lower end electrode 3 links to each other, deposit thermosensitive film 7, passivation layer 8 then successively, and remove sacrifice layer 4, form complete micro-bridge structure.
Fig. 3 has provided main technique steps flow chart block diagram of the present invention.What Fig. 4 provided is the micro-bridge structure schematic cross-section of main technique step of the present invention.Should be noted that no-refrigeration infrared focal plane micro-bridge structure vertically looks in from bridge floor, be 180 the degree rotational symmetric; Because Fig. 4 is a schematic cross-section, so can only see a bridge pier.Those skilled in the art should know the concrete structure of non-refrigerating infrared focal plane micro-bridge structure, Fig. 4 just understands the preparation method of non-refrigerating infrared focal plane micro-bridge structure of the present invention in order to allow the people be convenient to, but not the concrete structure of non-refrigerating infrared focal plane micro-bridge structure is described.In fact the non-refrigerating infrared focal plane micro-bridge structure is varied, but adopts preparation method of the present invention all can be achieved.
The present invention utilizes thin film growth process can finish the supporting construction of bridge pier, bridge leg and bridge floor, " framework " that be whole micro-bridge structure is by finishing in a thin film growth process with a kind of support layer material, greatly reduce technology difficulty and complexity, and bridge pier, bridge leg and the bridge floor Trinity, make that the mechanical support of whole microbridge is more firm, stability is higher; Simultaneously, the bridge pier that the present invention utilizes thin film growth process to produce becomes hollow shape, make the electricity passage manufacturing process of micro-bridge structure become more simple, need not perforate in bridge pier in addition, only need simple photoetching process can guarantee that upper end electrode links to each other with lower end electrode, thereby realize connection from the upper end thermosensitive film to the lower end reading circuit.
Based on above analysis, beneficial effect of the present invention is:
Compared with prior art, but utilize the present invention's processing machinery performance more firmly, stability is higher and electricity is communicated with more secure non-refrigerating infrared focal plane micro-bridge structure; Simultaneously, the present invention has simplified preparation technology, has reduced cost of manufacture.
Description of drawings
Fig. 1 is the no-refrigeration infrared focal plane micro-bridge structure schematic diagram that U.S. Ray Thcon makes, and is a kind of micro-bridge structure that adopts bridge pier, bridge leg and twice growth technique of bridge floor to finish.
Fig. 2 is the SEM photo of the uncooled infrared focal plane array of U.S. Ray Thcon manufacturing.
Fig. 3 is a no-refrigeration infrared focal plane device micro-bridge structure preparation method's of the present invention main technique FB(flow block).
Fig. 4 is the micro-bridge structure schematic cross-section of no-refrigeration infrared focal plane device micro-bridge structure preparation method's of the present invention main technique step.
Have 9 subgraphs, Fig. 4 (a) is a schematic cross-section of making lower end electrode on the substrate, and wherein 1 is substrate, the 3rd, and lower end electrode; Fig. 4 (b) is the schematic cross-section behind the growth sacrifice layer, and wherein 4 is sacrifice layers; Fig. 4 (c) is the schematic cross-section that growth sacrifice layer and etching spill lower end electrode; Fig. 4 (d) is the schematic cross-section behind the deposition supporting layer, and wherein 5 is supporting layers; Fig. 4 (e) is the schematic cross-section that deposition supporting layer and etching spill lower end electrode; Fig. 4 (f) is the schematic cross-section after the making upper end electrode, and wherein 6 is upper end electrode; Fig. 4 (g) is the schematic cross-section behind the deposition thermosensitive film, and wherein 7 is thermosensitive films; Fig. 4 (h) is the schematic cross-section after the deposit passivation layer, and wherein 8 is passivation layers; Fig. 4 (i) is the schematic cross-section behind the removal sacrifice layer.
The profile that Fig. 3 A looks at the place, wherein 1 is substrate, the 2nd, insulating barrier, the 3rd, lower end electrode, the 4th, bridge pier, the 5th, bridge floor, the 6th, bridge leg, the 7th, reflecting layer, the 8th, supporting layer, the 9th, top electrode, the 11st, thermosensitive film, the 12nd, passivation layer, the 13rd, infrared resonance chamber.
The specific embodiment
A kind of preparation method of no-refrigeration infrared focal plane micro-bridge structure as shown in Figure 3, may further comprise the steps:
Step 2, growth sacrifice layer 4, etching is exposed lower end electrode 3.
The supporting layer 5 of step 3, deposition micro-bridge structure, etching spills lower end electrode 3, and etching is made bridge leg and bridge floor.Because the supporting layer film thickness is much smaller than the thickness of thin film sacrificial layer, therefore behind the deposit supporting layer in sacrifice layer etching spill in the through hole of lower end electrode 3 and will form hollow pier, and will form a plane on sacrifice layer, this plane will form the bridge leg that connects bridge pier and bridge floor after etching.
After step 4, making and the upper end electrode 6 that lower end electrode 3 links to each other, deposit thermosensitive film 7, passivation layer 8 then successively, and remove sacrifice layer 4, form complete micro-bridge structure.
Such scheme in order to improve and improve the performance of prepared non-refrigerating infrared focal plane micro-bridge structure, does not repel the specific processing step of increase in the specific implementation.Such as: increase the insulating treatment step between step 1 and step 2, (material can be SiO promptly to deposit a layer insulating after making lower end electrode 3
2, SiC or Si
3N
4) to guarantee mutually insulated between each unit micro-bridge structure of non-refrigerating infrared focal plane; After the insulating treatment step that is increased, can also increase planarization (as insulating barrier is polished) step and deposition of reflective layer step, to improve the infrared resonance performance in prepared micro-bridge structure infrared resonance chamber; Before step 3 deposition supporting layer, increase the planarization step, to improve the infrared resonance performance in prepared micro-bridge structure infrared resonance chamber; Increase the device encapsulation step after the step 4, to improve the stability of non-refrigerating infrared focal plane.
Lower end electrode described in the step 13 can use materials such as Al, NiCr, Wu or Ti to make.
4 materials of sacrifice layer described in the step 2 can be SiO
2Or polyimides.
5 materials of supporting layer described in the step 3 can be Si, SiO
2, SiC or Si
3N
4
If increase deposition of reflective layer step, described reflector material can be metal material, metal oxide materials, semi-conducting material and the macromolecular material with good infrared external reflection function.
Upper end electrode described in the step 46 can use materials such as Al, NiCr, Wu or Ti to make.
Thermosensitive film described in the step 47 is made by the material with TCR characteristic, can be VO
x, Si, Ge, Si-Ge, Te, Bi, Ni-Co-Mn or GaAs etc.
Passivation layer described in the step 48, available SiC, Si
3N
4Or material such as TiN is made.
More than the various combinations of various technical characterictics on basic technical scheme of the present invention, all within the scope of the present patent application protection, give unnecessary details no longer one by one at this.
Claims (8)
1, a kind of preparation method of no-refrigeration infrared focal plane micro-bridge structure may further comprise the steps:
Step 1, the lower end electrode (3) of on substrate (1), making the micro-bridge structure that links to each other with reading circuit;
Step 2, growth sacrifice layer (4), etching is exposed lower end electrode (3);
The supporting layer (5) of step 3, deposition micro-bridge structure, etching spills lower end electrode (3), and etching is made bridge leg and bridge floor; Because the supporting layer film thickness is much smaller than the thickness of thin film sacrificial layer, therefore behind the deposit supporting layer in sacrifice layer etching spill in the through hole of lower end electrode (3) and will form hollow pier, and will form a plane on sacrifice layer, this plane will form the bridge leg that connects bridge pier and bridge floor after etching;
After step 4, making and the upper end electrode (6) that lower end electrode (3) links to each other, deposit thermosensitive film (7), passivation layer (8) then successively, and remove sacrifice layer (4), form complete micro-bridge structure.
2, the preparation method of no-refrigeration infrared focal plane micro-bridge structure according to claim 1, it is characterized in that, between step 1 and step 2, increase the insulating treatment step, promptly deposit a layer insulating afterwards to guarantee mutually insulated between each unit micro-bridge structure of non-refrigerating infrared focal plane in making lower end electrode (3).
3, the preparation method of no-refrigeration infrared focal plane micro-bridge structure according to claim 2 is characterized in that, described insulating layer material is SiO
2, SiC or Si
3N
4
4, the preparation method of no-refrigeration infrared focal plane micro-bridge structure according to claim 2, it is characterized in that, after described insulating treatment step, increase planarization step and deposition of reflective layer step, to improve the infrared resonance performance in prepared micro-bridge structure infrared resonance chamber.
5, the preparation method of no-refrigeration infrared focal plane micro-bridge structure according to claim 4 is characterized in that, described reflector material is metal material, metal oxide materials, semi-conducting material and the macromolecular material with infrared external reflection function.
6, the preparation method of no-refrigeration infrared focal plane micro-bridge structure according to claim 1 is characterized in that, increases the planarization step before step 3 deposition supporting layer, to improve the infrared resonance performance in prepared micro-bridge structure infrared resonance chamber.
According to the preparation method of claim 4 or 6 described no-refrigeration infrared focal plane micro-bridge structures, it is characterized in that 7, described planarization is polishing.
8, the preparation method of no-refrigeration infrared focal plane micro-bridge structure according to claim 1 is characterized in that, described lower end electrode (3) or upper end electrode (6) are made of Al, NiCr, Wu or Ti material; Described sacrifice layer (4) material is SiO
2Or polyimides; Described supporting layer (5) material is Si, SiO
2, SiC or Si
3N
4Described thermosensitive film (7) material is VO
x, Si, Ge, Si-Ge, Te, Bi, Ni-Co-Mn or GaAs; Described passivation layer (8) material is SiC, Si
3N
4Or TiN.
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| CNA2008100460832A CN101357747A (en) | 2008-09-17 | 2008-09-17 | Preparation method of no-refrigeration infrared focal plane micro-bridge structure |
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| CN102226721A (en) * | 2011-04-06 | 2011-10-26 | 电子科技大学 | Non-refrigerated infrared detection focal plane device |
| CN102280455A (en) * | 2011-05-11 | 2011-12-14 | 武汉高德红外股份有限公司 | Non-refrigeration infrared focal plane array seeker |
| CN102951597A (en) * | 2011-08-19 | 2013-03-06 | 烟台睿创微纳技术有限公司 | Preparation method of micro-bridge structured infrared detector, and micro-bridge structure |
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| CN102226721A (en) * | 2011-04-06 | 2011-10-26 | 电子科技大学 | Non-refrigerated infrared detection focal plane device |
| CN102280455A (en) * | 2011-05-11 | 2011-12-14 | 武汉高德红外股份有限公司 | Non-refrigeration infrared focal plane array seeker |
| CN102951597A (en) * | 2011-08-19 | 2013-03-06 | 烟台睿创微纳技术有限公司 | Preparation method of micro-bridge structured infrared detector, and micro-bridge structure |
| CN102951597B (en) * | 2011-08-19 | 2016-03-30 | 烟台睿创微纳技术有限公司 | A kind of preparation method of infrared detector with micro-bridge structure and micro-bridge structure |
| CN103569946A (en) * | 2012-07-31 | 2014-02-12 | 昆山光微电子有限公司 | Manufacturing method for non-refrigeration optical readout infrared imaging focal plane array detector |
| CN103569946B (en) * | 2012-07-31 | 2015-10-07 | 昆山光微电子有限公司 | Non-brake method light reads infrared imaging focus plane array detector preparation method |
| CN103112817B (en) * | 2013-02-04 | 2016-01-13 | 烟台睿创微纳技术有限公司 | A kind of non-refrigerated infrared detector tower pier and preparation method thereof |
| CN103112817A (en) * | 2013-02-04 | 2013-05-22 | 烟台睿创微纳技术有限公司 | Tower-type pier of uncooled infrared detector and manufacture method thereof |
| CN103763668A (en) * | 2013-10-18 | 2014-04-30 | 张小友 | MEMS microphone |
| CN103763668B (en) * | 2013-10-18 | 2016-08-17 | 张小友 | A kind of MEMS microphone |
| CN105933837A (en) * | 2013-10-18 | 2016-09-07 | 张小友 | MEMS microphone vibrating diaphragm |
| CN105933837B (en) * | 2013-10-18 | 2019-02-15 | 张小友 | A kind of MEMS microphone vibrating diaphragm |
| CN105060237A (en) * | 2015-08-26 | 2015-11-18 | 无锡艾立德智能科技有限公司 | Bridge leg composite structure of focal plane array microbridge unit |
| CN105439082A (en) * | 2015-11-16 | 2016-03-30 | 北方广微科技有限公司 | Manufacturing method of TiAlV film for bridge arm of infrared detector |
| CN106098846A (en) * | 2016-06-29 | 2016-11-09 | 烟台睿创微纳技术股份有限公司 | A kind of for non-refrigerated infrared detector reference pixel and manufacture method thereof |
| CN106098846B (en) * | 2016-06-29 | 2017-09-05 | 烟台睿创微纳技术股份有限公司 | One kind is used for non-refrigerated infrared detector and refers to pixel and its manufacture method |
| CN106800271A (en) * | 2017-01-24 | 2017-06-06 | 烟台睿创微纳技术股份有限公司 | A kind of new non-refrigerated infrared focal plane probe dot structure and preparation method thereof |
| CN106800271B (en) * | 2017-01-24 | 2018-06-26 | 烟台睿创微纳技术股份有限公司 | A kind of non-refrigerated infrared focal plane probe dot structure and preparation method thereof |
| CN110672211A (en) * | 2019-09-11 | 2020-01-10 | 中国科学院上海技术物理研究所 | Nano-gold modified non-refrigeration infrared detector and manufacturing method thereof |
| CN114088201A (en) * | 2021-03-26 | 2022-02-25 | 北京北方高业科技有限公司 | Infrared detector pixel and infrared detector based on CMOS (complementary metal oxide semiconductor) process |
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