CN103569946B - Non-brake method light reads infrared imaging focus plane array detector preparation method - Google Patents
Non-brake method light reads infrared imaging focus plane array detector preparation method Download PDFInfo
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- CN103569946B CN103569946B CN201210270383.5A CN201210270383A CN103569946B CN 103569946 B CN103569946 B CN 103569946B CN 201210270383 A CN201210270383 A CN 201210270383A CN 103569946 B CN103569946 B CN 103569946B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000003331 infrared imaging Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000004806 packaging method and process Methods 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052710 silicon Inorganic materials 0.000 abstract description 9
- 239000010703 silicon Substances 0.000 abstract description 9
- 230000005855 radiation Effects 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000009826 distribution Methods 0.000 abstract description 2
- 238000005538 encapsulation Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
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Abstract
The invention discloses a kind of non-brake method light and read infrared imaging focus plane array detector preparation method, this preparation method is based on many sacrificial layer technologies, making movable micro-cantilever array on a transparent substrate, utilize the heat of micro-cantilever array---mechanical property detects the infra-red radiation field distribution of target object.This preparation method can solve the problem such as device of non-refrigerated infrared focal plane array complex manufacturing technology, encapsulation difficulty that traditional silicon substrate makes, the focal plane array detector that this preparation method makes simultaneously had both avoided silicon substrate to be affected for target object infrared energy, improve system IR radiation utilization rate, avoid complicated body silicon to remove technique, be more easy to wafer level packaging.
Description
Technical field
The present invention relates to non-refrigerate infrared focal plane array seeker technical field in infrared imaging system, particularly relate to a kind of non-brake method light and read infrared imaging focus plane array detector preparation method.
Background technology
The light of application opto-mechanical tool principle reads un-cooled infrared focal plane array, large is key mechanics structure mainly with bi-material layers cantilever beam unit: after cantilever beam unit absorbs incident infrared light, temperature raises, concurrent raw heat deformation, again by the deformation of optical pickup system non-contact detecting, just obtain the infrared information of target.Above-mentioned bi-material layers cantilever beam unit makes usually on a silicon substrate, comprises the micro-cantilever unit with sacrifice layer and full hollow out micro-cantilever unit.The former can only utilize limited infrared energy imaging because silicon substrate is to the decay of infra-red radiation; The latter is without silicon substrate, very high to the utilization rate of infra-red radiation, but need long body silicon removal step and reliable stress control technique to make the full engraved structure array in flat film, have very high requirement to manufacture craft, and increase wafer level packaging difficulty.
Summary of the invention
In order to overcome above-mentioned defect, the invention provides a kind of non-brake method light and read infrared imaging focus plane array detector preparation method, this preparation method is based on many sacrificial layer technologies, make movable micro-cantilever display on a transparent substrate, utilizing the heat that micro-cantilever displays---mechanical property detects the infra-red radiation field distribution of target object, not only technique making is simple for it, and is convenient to encapsulation.
The present invention in order to the technical scheme solving its technical problem and adopt is: a kind of non-brake method light reads infrared imaging focus plane array detector preparation method, comprises the following steps:
1. deposit one deck first sacrifice layer on the upper side of a transparent substrates, and described transparent substrates is to the visible transparent read in light path;
2. on the upper side of above-mentioned first sacrifice layer, selective etch is carried out to obtain the figure of anchor point;
3. on the upper side of above-mentioned first sacrifice layer, make micro-cantilever unit, one end of this micro-cantilever unit is connected with described transparent substrates by the figure of described anchor point;
4. jointly on the upper side of above-mentioned micro-cantilever unit and the first sacrifice layer the second sacrifice layer is covered;
5. on the upper side of the second sacrifice layer of cantilever beam unit described in non-corresponding, selective etch goes out several blind slots, and this blind slot runs through described second sacrifice layer and the first sacrifice layer extremely described transparent substrates;
6. deposit first encapsulating material on the upper side of above-mentioned second sacrifice layer and in several blind slots, this first encapsulating material is filled several blind slots described completely and is covered the upper side of described second sacrifice layer completely;
7. on the upper side of above-mentioned first encapsulating material, make several release blind holes, this release blind hole runs through the first encapsulating material to the second sacrifice layer, so far forms the encapsulating shell of band release blind hole;
8. above-mentioned second sacrifice layer and the first sacrifice layer are removed from described release blind hole release;
9., after above-mentioned encapsulating shell being pumped residual gas under vacuum conditions, on above-mentioned first encapsulating material upper side, deposit second encapsulating material is with closed encapsulating shell, thus completes wafer-level packaging.
As a further improvement on the present invention, described second encapsulating material and the first encapsulating material are same material, and this material is to infrared light transparent.
As a further improvement on the present invention, described second sacrifice layer and described first sacrifice layer are same material.
As a further improvement on the present invention, described release blind hole is at least two.
As a further improvement on the present invention, dry release is 8. adopted described second sacrifice layer and the first sacrifice layer to be removed in described step.
The invention has the beneficial effects as follows: the focal plane array detector that this preparation method makes both had avoided silicon substrate to be affected for target object infrared energy, improve system IR radiation utilization rate, avoid complicated body silicon to remove technique simultaneously, be more easy to wafer level packaging.
Accompanying drawing explanation
Fig. 1 is one of the step of preparation method of the present invention structural representation;
Fig. 2 is two structural representations of the step of preparation method of the present invention;
Fig. 3 is three structural representations of the step of preparation method of the present invention;
Fig. 4 is four structural representations of the step of preparation method of the present invention;
Fig. 5 is five structural representations of the step of preparation method of the present invention;
Fig. 6 is six structural representations of the step of preparation method of the present invention;
Fig. 7 is seven structural representations of the step of preparation method of the present invention;
Fig. 8 is eight structural representations of the step of preparation method of the present invention;
Fig. 9 is nine structural representations of the step of preparation method of the present invention.
By reference to the accompanying drawings, make the following instructions:
1---transparent substrates 2---first sacrifice layer
3---micro-cantilever unit 4---second sacrifice layer
5---first encapsulating material 6---second encapsulating material
21---figure 41 of anchor point---blind slot
51---release blind hole
Detailed description of the invention
By reference to the accompanying drawings, elaborate to the present invention, but protection scope of the present invention is not limited to following embodiment, the simple equivalence namely in every case done with the present patent application the scope of the claims and description changes and modifies, and all still belongs within patent covering scope of the present invention.
A kind of non-brake method light reads infrared imaging focus plane array detector preparation method, it is characterized in that comprising the following steps:
1. deposit one deck first sacrifice layer 2 on the upper side of a transparent substrates 1, and described transparent substrates is to the visible transparent read in light path, as shown in Figure 1;
2. on the upper side of above-mentioned first sacrifice layer 2, selective etch is carried out to obtain the figure 21 of anchor point, as shown in Figure 2;
3. on the upper side of above-mentioned first sacrifice layer, make micro-cantilever unit 3, one end of this micro-cantilever unit is connected with described transparent substrates by the figure of described anchor point, as shown in Figure 3;
4. jointly on the upper side of above-mentioned micro-cantilever unit and the first sacrifice layer the second sacrifice layer 4 is covered, as shown in Figure 4;
5. on the upper side of the second sacrifice layer of cantilever beam unit described in non-corresponding, selective etch goes out several blind slots 41, and this blind slot runs through described second sacrifice layer and the first sacrifice layer extremely described transparent substrates, as shown in Figure 5;
6. deposit first encapsulating material 5 on the upper side of above-mentioned second sacrifice layer and in several blind slots, this first encapsulating material is filled several blind slots described completely and is covered the upper side of described second sacrifice layer completely, as shown in Figure 6;
7. on the upper side of above-mentioned first encapsulating material, make several release blind holes 51, this release blind hole runs through the first encapsulating material to the second sacrifice layer, as shown in Figure 7, so far forms the encapsulating shell of band release blind hole;
8. above-mentioned second sacrifice layer and the first sacrifice layer are removed from described release blind hole release, as shown in Figure 8;
9., after above-mentioned encapsulating shell being pumped residual gas under vacuum conditions, on above-mentioned first encapsulating material upper side, deposit second encapsulating material 6 is with closed encapsulating shell, thus completes wafer-level packaging, as shown in Figure 9.
Preferably, described second encapsulating material and the first encapsulating material are same material, and this material is to infrared light transparent.
Preferably, described second sacrifice layer and described first sacrifice layer are same material.
Preferably, described release blind hole is at least two.
Preferably, dry release is 8. adopted described second sacrifice layer and the first sacrifice layer to be removed in described step.
The light utilizing said method to make reads device of non-refrigerated infrared focal plane array, and operationally transparent substrates is towards the visible ray side read in light path, and the side that encapsulating material covers is head for target object then.
The infrared light that target object sends arrives micro-cantilever unit after encapsulating shell transmission, and after described micro-cantilever absorbs infrared energy, temperature raises, and deformation occurs; Emergent light in reading light path, through the transparent substrates of device, carries the deformation data of micro-cantilever unit, therefore analyze the infrared information that described deformation data just can obtain target object, that is realize infrared detection with micro-cantilever unit after interacting.
Claims (5)
1. non-brake method light reads an infrared imaging focus plane array detector preparation method, it is characterized in that comprising the following steps:
1. deposit one deck first sacrifice layer (2) on the upper side of a transparent substrates (1), and described transparent substrates is to the visible transparent read in light path;
2. on the upper side of above-mentioned first sacrifice layer (2), selective etch is carried out to obtain the figure (21) of anchor point;
3. on the upper side of above-mentioned first sacrifice layer, make micro-cantilever unit (3), one end of this micro-cantilever unit is connected with described transparent substrates by the figure of described anchor point;
4. jointly on the upper side of above-mentioned micro-cantilever unit and the first sacrifice layer the second sacrifice layer (4) is covered;
5. on the upper side of the second sacrifice layer of cantilever beam unit described in non-corresponding, selective etch goes out several blind slots (41), and this blind slot runs through described second sacrifice layer and the first sacrifice layer extremely described transparent substrates;
6. deposit first encapsulating material (5) on the upper side of above-mentioned second sacrifice layer and in several blind slots, this first encapsulating material is filled several blind slots described completely and is covered the upper side of described second sacrifice layer completely;
7. on the upper side of above-mentioned first encapsulating material, make several release blind hole (51), this release blind hole runs through the first encapsulating material to the second sacrifice layer, so far forms the encapsulating shell of band release blind hole;
8. above-mentioned second sacrifice layer and the first sacrifice layer are removed from described release blind hole release;
9., after above-mentioned encapsulating shell being pumped residual gas under vacuum conditions, on above-mentioned first encapsulating material upper side, deposit second encapsulating material (6) is with closed encapsulating shell, thus completes wafer-level packaging.
2. non-brake method light according to claim 1 reads infrared imaging focus plane array detector preparation method, it is characterized in that: described second encapsulating material and the first encapsulating material are same material, and this material is to infrared light transparent.
3. non-brake method light according to claim 1 and 2 reads infrared imaging focus plane array detector preparation method, it is characterized in that: described second sacrifice layer and described first sacrifice layer are same material.
4. non-brake method light according to claim 3 reads infrared imaging focus plane array detector preparation method, it is characterized in that: described release blind hole is at least two.
5. non-brake method light according to claim 3 reads infrared imaging focus plane array detector preparation method, it is characterized in that: 8. adopt dry release described second sacrifice layer and the first sacrifice layer to be removed in described step.
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| CN105712284B (en) * | 2014-12-02 | 2017-09-29 | 无锡华润上华半导体有限公司 | The preparation method and MEMS infrared detectors of MEMS Double-layered suspended micro-structurals |
| CN116130546A (en) * | 2021-11-10 | 2023-05-16 | 浙江珏芯微电子有限公司 | Preparation method of refrigeration infrared detector |
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| CN101140185A (en) * | 2006-09-06 | 2008-03-12 | 中国科学院微电子研究所 | Non-refrigerate infrared focal plane array seeker and preparation method thereof |
| CN101249935A (en) * | 2007-03-31 | 2008-08-27 | 浙江大立科技股份有限公司 | Thermal isolation micro-bridge structure and processing method thereof |
| CN101357747A (en) * | 2008-09-17 | 2009-02-04 | 电子科技大学 | Preparation method of no-refrigeration infrared focal plane micro-bridge structure |
| CN101439841A (en) * | 2008-12-25 | 2009-05-27 | 中国传媒大学 | Non-refrigeration infrared image sensor chip and preparation thereof |
| CN101713688A (en) * | 2009-12-11 | 2010-05-26 | 中国电子科技集团公司第十三研究所 | MEMS non-refrigerated two-band infrared detector and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20070116703A (en) * | 2006-06-06 | 2007-12-11 | 임용근 | Uncooled infrared sensor |
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Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7265429B2 (en) * | 2002-08-07 | 2007-09-04 | Chang-Feng Wan | System and method of fabricating micro cavities |
| CN1864274A (en) * | 2003-10-09 | 2006-11-15 | Ocas株式会社 | Bolometric infrared sensor having two layer structure and method for manufacturing the same |
| CN101140185A (en) * | 2006-09-06 | 2008-03-12 | 中国科学院微电子研究所 | Non-refrigerate infrared focal plane array seeker and preparation method thereof |
| CN101249935A (en) * | 2007-03-31 | 2008-08-27 | 浙江大立科技股份有限公司 | Thermal isolation micro-bridge structure and processing method thereof |
| CN101357747A (en) * | 2008-09-17 | 2009-02-04 | 电子科技大学 | Preparation method of no-refrigeration infrared focal plane micro-bridge structure |
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Effective date of registration: 20220804 Address after: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee after: Institute of Microelectronics of the Chinese Academy of Sciences Address before: 215325 No. 145, Daqiao Road, Zhouzhuang Town, Kunshan City, Suzhou City, Jiangsu Province Patentee before: KUNSHAN MICROOPTIC ELECTRONIC CO.,LTD. |
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