CN103759838A - Infrared detector of microbridge structure and method for manufacturing same - Google Patents
Infrared detector of microbridge structure and method for manufacturing same Download PDFInfo
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- CN103759838A CN103759838A CN201410013619.6A CN201410013619A CN103759838A CN 103759838 A CN103759838 A CN 103759838A CN 201410013619 A CN201410013619 A CN 201410013619A CN 103759838 A CN103759838 A CN 103759838A
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Abstract
The invention provides an infrared detector of a microbridge structure and a method for manufacturing the infrared detector of the microbridge structure. The detector comprises a reading circuit substrate, a microbridge leg, a heat sensitive layer, an infrared reflection layer and an infrared absorption layer. The infrared absorption layer is supported by and arranged above the heat sensitive layer, a resonant cavity for incoming infrared light is formed by the infrared absorption layer and the infrared reflection layer, and the microbridge leg is arranged below the infrared reflection layer and electrically connected with the reading circuit substrate. Through the structure, the infrared absorptivity of the device can be improved while thermal conductance of the device can be reduced, the filling rate of the device is improved, the defects of the resonant cavity are overcome, and thus the thermal isolation effect and the responsivity of the device are improved and the performance of the device is optimized.
Description
Technical field
The invention belongs to field of micro electromechanical technology, be specifically related to a kind of infrared detector with micro-bridge structure and manufacture method thereof of multilayer.
Background technology
Infrared eye of the prior art is to adopt integrated MEMS micro-bridge structure on cmos circuit, utilizes sensitive material detecting layer (being generally amorphous silicon or vanadium oxide) absorb infrared ray and convert it into electric signal, realizes accordingly thermal imaging function.The main development direction of current infrared eye is for reducing pixel physical dimension and increasing array sizes, improve the image resolution ratio of detector, expand the range of application of infrared eye, the level of its MEMS manufacturing process has become the principal element of restriction properties of product.The micro-bridge structure of infrared eye narrows down to 17*17 micron pixel structure now from early stage 100*100 micron.The stress that little pixel structure can reduce film does not mate and strengthens detector sensitivity and resolution; In addition, for identical array scale, little pixel structure means less detector and Lens, thereby can dwindle weight and the size of infrared thermal imagery instrument system, increases the portability of thermal infrared imager.
It shown in accompanying drawing 1, is a kind of typical individual layer micro-bridge structure schematic diagram in prior art, comprise substrate 10, the infrared reflecting layer 11 on substrate 10 surfaces, the surface that bridge floor 12 is arranged on described infrared reflecting layer 11, and by forming resonator cavity 14 with bridge leg 13 by dielectric layer 16 cross-brace, infrared absorption layer 15 is arranged at described bridge floor 12 inside.The advantage of individual layer microbridge is simple in structure, be easy to manufacture, but shortcoming is that bridge leg 13 and bridge floor 12 are in same plane, in the situation that pixel microbridge area is certain, increase when pixel bridge leg length improves thermal resistance and must reduce the effective infrared absorption area of microbridge, thereby be difficult to improve infrared Absorption rate when reducing device thermal conductance.Particularly, along with pixel dimension reduces gradually, more and more limit to small size detector pixel design space, and its fault of construction is more and more significant, has limited the further raising of device performance.
The design of double-deck micro-bridge structure is to propose for solving the contradiction between pixel infrared Absorption useful area and device thermal conductance in traditional single sacrifice layer micro-bridge structure.It shown in accompanying drawing 2, is a kind of typical double-deck micro-bridge structure schematic diagram in prior art, comprise substrate 20, the infrared reflecting layer 21 on substrate 20 surfaces, the surface that bridge floor 22 is arranged on described infrared reflecting layer 21, and by forming resonator cavity 24 with bridge leg 23 longitudinal bracings, infrared absorption layer 25 is arranged at described bridge floor 22 inside.The emphasis of double-decker design is that infrared reflecting layer 21 and heat-insulating bridge leg 23 place planes are separated completely, it is no longer influenced each other, but also there is defect in this structure, in the resonator cavity 24 that to be large area infrared absorption layer 25 form with infrared reflecting layer 21, accompany bridge leg 23, bridge leg 23 can affect the resonance effect of infrared incident light wave, reduces infrared absorption efficiency.
Therefore, a kind of micro-bridge structure with high absorption efficiency is proposed, be prior art problem demanding prompt solution.
Summary of the invention
Technical matters to be solved by this invention is that a kind of infrared detector with micro-bridge structure and manufacture method thereof with high absorption efficiency is provided.
In order to address the above problem, the invention provides a kind of infrared detector with micro-bridge structure, comprising: substrate, the upper surface of described substrate is provided with electrode; Bridge leg, described bridge leg adopts conductive material to make, and described bridge leg supports and is arranged at described substrate top, and the strong point is positioned at the electrode place of described substrate top surface, thereby is connected with described electrode electricity; Thermally sensitive layer, described thermally sensitive layer is arranged at described bridge leg top, and by being arranged on electrical connection stent support in described thermally sensitive layer through hole, being arranged at the surface of described bridge leg, described electrical connection support is connected with described bridge leg and then with the electricity of described electrode for described thermally sensitive layer; Infrared reflecting layer, described infrared reflecting layer is arranged between described bridge leg and described thermally sensitive layer, and by the lower surface laminating of dielectric layer and described thermally sensitive layer overhanging portion; Infrared absorption layer, described infrared absorption layer supports the surface that is arranged at described thermally sensitive layer, absorb incident infrared light, change into heat and conduct to described sensitive layer, described infrared absorption layer further forms the resonator cavity for incident infrared light with described infrared reflecting layer.
Optionally, in the body part of described bridge leg the first plane parallel with substrate in, and by the stent support being certainly bent to form, be arranged at the surface of described electrode.
Optionally, described thermally sensitive layer is with the body part of electrical connection support in second plane parallel with substrate, and described electrical connection support is further arranged at the surface of described bridge leg by the stent support being certainly bent to form.
Optionally, the body part of described infrared absorption layer, in three plane parallel with substrate, and is arranged at the surface of described thermally sensitive layer by the stent support being certainly bent to form.
Optionally, the surface of described substrate, bridge leg, thermally sensitive layer and infrared absorption layer further has overlayer.
Optionally, the material of described bridge leg is selected from any one in titanium, titanium nitride and tantalum.
Optionally, the material of described thermally sensitive layer is selected from any one in amorphous silicon and vanadium oxide.
Optionally, the material of described electrical connection support is selected from any one in titanium, tantalum, nickel, chromium, titanium nitride and nickel-chrome.
Optionally, the material of described infrared reflecting layer is selected from any one in aluminium, silver and gold.
Optionally, the material of described infrared absorption layer is selected from any one in titanium nitride and nickel-chrome.
The present invention further provides a kind of method for making of infrared detector with micro-bridge structure, comprised the steps: to provide substrate, in the surface of described substrate, be provided with electrode; At substrate surface, make bridge leg, the overhanging portion of described bridge leg is by separation between the first sacrifice layer and described substrate; On bridge leg surface, make patterned infrared reflecting layer, described infrared reflecting layer is by separation between the second sacrifice layer and described bridge leg; Surface at described infrared reflecting layer makes dielectric layer; The electrical connection support of making thermally sensitive layer and being connected with thermally sensitive layer on described dielectric layer surface, described electrical connection support is formed in the through hole in described thermally sensitive layer, through gap and the dielectric layer of described patterned infrared reflecting layer, support the surface that is arranged at described bridge leg; Surface at described thermally sensitive layer makes infrared absorption layer, and the overhanging portion of described infrared absorption layer is by separation between the 3rd sacrifice layer and described thermally sensitive layer; Remove described the first sacrifice layer, the second sacrifice layer and the 3rd sacrifice layer, thereby make bridge leg, infrared reflecting layer, thermally sensitive layer and infrared absorption layer segment unsettled, and described infrared absorption layer and described infrared reflecting layer form the resonator cavity for incident infrared light, and described thermally sensitive layer is arranged in described resonator cavity.
Optionally, in the body part of described bridge leg the first plane parallel with substrate in, and by the stent support being certainly bent to form, be arranged at the surface of described electrode.
Optionally, described thermally sensitive layer is with the body part of electrical connection support in second plane parallel with substrate, and described electrical connection support is further arranged at the surface of described bridge leg by the stent support being certainly bent to form.
Optionally, the body part of described infrared absorption layer, in three plane parallel with substrate, and is arranged at the surface of described thermally sensitive layer by the stent support being certainly bent to form.
The invention has the advantages that, the form of bridge leg and infrared reflecting layer, infrared absorption layer hierarchical design, effectively increased the design space of small size picture dot, when reducing device thermal conductance, increase device ir-absorbance, improved the filling rate of device, solve resonator cavity defect, thereby improved the hot isolation effect of device and responsiveness, optimized device performance.
Accompanying drawing explanation
It shown in accompanying drawing 1, is a kind of typical individual layer micro-bridge structure schematic diagram in prior art;
It shown in accompanying drawing 2, is a kind of typical double-deck micro-bridge structure schematic diagram in prior art;
It shown in accompanying drawing 3, is the manufacture craft schematic diagram of microbridge infrared eye described in the specific embodiment of the invention;
Accompanying drawing 4A is to shown in accompanying drawing 4G being the process schematic representation of this embodiment.
Embodiment
Below in conjunction with accompanying drawing, the embodiment of infrared detector with micro-bridge structure provided by the invention and manufacture method thereof is elaborated.
Shown in accompanying drawing 3, be the manufacture craft schematic diagram of microbridge infrared eye described in the specific embodiment of the invention, comprise: step S30, substrate is provided, the upper surface of described substrate is provided with electrode; Step S31, makes bridge leg at substrate surface, and the overhanging portion of described bridge leg is by separation between the first sacrifice layer and described substrate; Step S32, makes patterned infrared reflecting layer on bridge leg surface, and described infrared reflecting layer is by separation between the second sacrifice layer and described bridge leg; Step S33, makes dielectric layer on the surface of described infrared reflecting layer; Step S34, the electrical connection support of making thermally sensitive layer and being connected with thermally sensitive layer on described dielectric layer surface, described electrical connection support is formed in the through hole in described thermally sensitive layer, through gap and the dielectric layer of described patterned infrared reflecting layer, supports the surface that is arranged at described bridge leg; Step S35, makes infrared absorption layer on the surface of described thermally sensitive layer, and the overhanging portion of described infrared absorption layer is by separation between the 3rd sacrifice layer and described thermally sensitive layer; Step S36, remove described the first sacrifice layer, the second sacrifice layer and the 3rd sacrifice layer, thereby make bridge leg, infrared reflecting layer, thermally sensitive layer and infrared absorption layer segment unsettled, and described infrared absorption layer and described infrared reflecting layer form the resonator cavity for incident infrared light.
Accompanying drawing 4A is to shown in accompanying drawing 4G being the process schematic representation of this embodiment.
Shown in accompanying drawing 4A, refer step S30, provides substrate 400, in the upper surface of described substrate 400, is provided with electrode, and this embodiment is take electrode 411,412 as example.In other concrete mode, the number of electrode and position can adjust according to the shape of detector and structure.The material of described substrate 400 can be any one the conventional backing material including monocrystalline silicon.The material of electrode 411 and 412 can be metal.Electrode 411 and 412 is realized being electrically connected between detector and sensing circuit in substrate 400.Sensing circuit (not shown) in substrate 400 completed in substrate 400 by standard CMOS process before making detector.The first overlayer 491 is arranged between electrode 411 and 412, to guarantee the electric isolation between electrode.The material of the first overlayer 491 can be for example monox or silicon nitride etc.
Shown in accompanying drawing 4B, refer step S31, makes bridge leg 420 on substrate 400 surfaces, and the overhanging portion of described bridge leg 420 is by separation between the first sacrifice layer 481 and described substrate 400.In order to protect bridge leg 420, second overlayer 492 of further growing before making bridge leg 420, and make growth regulation three overlayers 493 afterwards at bridge leg 420.The effect of the second overlayer 492 and the 3rd overlayer 493 is be removed and after discharging the structure of bridge leg 420, can play a protective role to the surface of bridge leg 420 when the first sacrifice layer 481.The material of the first sacrifice layer 481 can be amorphous silicon, polyimide, polysilicon etc.The material of described the second overlayer 492 and the 3rd overlayer 493 can be for example monox or silicon nitride etc.
In this embodiment, in the body part of described bridge leg 420 the first plane A parallel with substrate 400 in, and by being arranged at from the stent support being bent to form on the electrode 411 and 412 on described substrate 400 surfaces.In other embodiment, the body part of described bridge leg 420 also can be realized support function by pillar or other rigid structure.Described bridge leg 420 should be selected the conductive material of low heat conductivity, for example, be selected from any one in titanium, titanium nitride and tantalum.Select low Heat Conduction Material can prevent that the heat in described substrate 400 from diffusing in infrared eye by described bridge leg 420.
Shown in accompanying drawing 4C, refer step S32, makes patterned infrared reflecting layer 430 on bridge leg 420 surfaces, and described infrared reflecting layer 430 is by separation between the second sacrifice layer 482 and described bridge leg 420.The patterned object of described infrared reflecting layer 430 is that the electrical connection support of follow-up making can contact with bridge leg 420 by the gap between figure, forms the mechanical support to the infrared-sensitive parts in resonator cavity, and the electrical signal producing can be derived.The material of described the second sacrifice layer 482 can be amorphous silicon, polyimide, polysilicon etc.The material of described infrared reflecting layer 430 should be material infrared light to high reflectance, can be selected from any one in aluminium, silver and gold.
Shown in accompanying drawing 4D, refer step S33, makes dielectric layer 440 on the surface of described infrared reflecting layer 430.Because the second sacrifice layer 482 will be removed, therefore infrared reflecting layer 430 can be attached to by dielectric layer 440 surface of other parts, and dielectric layer 440 further plays electric isolation effect to infrared reflecting layer 430 and other parts.The material of dielectric layer 440 can be for example individual layer or the lamination layer structure of the materials such as monox, silicon nitride and polysilicon.
Shown in accompanying drawing 4E, refer step S34, the electrical connection support 460 of making thermally sensitive layer 450 and being connected with thermally sensitive layer 450 on described dielectric layer 440 surfaces, described electrical connection support 460 is arranged in the through hole of thermally sensitive layer 450, and through gap and the dielectric layer 440 of described patterned infrared reflecting layer 430, support the surface that is arranged at described bridge leg 420.Infrared reflecting layer 430 is attached to the lower surface of thermally sensitive layer 450 by dielectric layer 440, can guarantee that infrared reflecting layer 430 is unlikely to come off after the second sacrifice layer 482 is removed.And dielectric layer 440 has played the electric isolation effect between infrared reflecting layer 430 and thermally sensitive layer 450.
The material of described thermally sensitive layer 450 is selected from any one in amorphous silicon and vanadium oxide, and the effect of this layer is absorb the heat of infrared radiation generation and convert it into electric signal.Due to mechanically coupled together by described electrical connection support 460 between described thermally sensitive layer 450 and described bridge leg 420, therefore similar with described bridge leg 420, the material of described electrical connection support 460 should be low heat conductivity conductive material, for example, can be to be selected from any one in titanium, tantalum, nickel, chromium, titanium nitride and nickel-chrome.
In this embodiment, thermally sensitive layer 450 is with the body part of electrical connection support 460 in a second plane B parallel with substrate 400, and described electrical connection support 460 is further arranged at the surface of described bridge leg 420 by the stent support being certainly bent to form.In other embodiment, described electrical connection support 460 also can be realized support function by pillar or other rigid structure.
Shown in accompanying drawing 4F, refer step S35, makes infrared absorption layer 470 on the surface of described thermally sensitive layer 450, and the overhanging portion of described infrared absorption layer 470 is by separation between the 3rd sacrifice layer 483 and described thermally sensitive layer 450.The material of described the 3rd sacrifice layer 483 can be amorphous silicon, polyimide, polysilicon etc.
The material of described infrared absorption layer 470 is selected from any one membraneous material in titanium nitride and nickel-chrome, the square resistance of its membraneous material is in 377 Ω/ left and right, maximizing improves infrared absorption effect, the body part of described infrared absorption layer 470, in three plane C parallel with substrate 400, and is arranged at the surface of described thermally sensitive layer 450 by the stent support being certainly bent to form.In other embodiment, the body part of described infrared absorption layer 470 also can be realized support function by pillar or other rigid structure.Infrared absorption layer 470 can absorb the infrared light of incident and change into heat, and heat further conducts to thermally sensitive layer 450 by the contact site of infrared absorption layer 470 and thermally sensitive layer 450, and converts it into electric signal by thermally sensitive layer 450.
In order to protect described thermally sensitive layer 450, before making the 3rd sacrifice layer 483, can first on the surface of described thermally sensitive layer 450, make the 4th overlayer 494.In order to protect described infrared absorption layer 470, before making described infrared absorption layer 470, can first make the 5th overlayer 495, and can make the 6th overlayer 496 after making described infrared absorption layer 470.The material of described the 4th overlayer 494, the 5th overlayer 495 and the 6th overlayer 496 can be for example monox or silicon nitride etc.
Shown in accompanying drawing 4G, refer step S36, remove described the first sacrifice layer 481, the second sacrifice layer 482 and the 3rd sacrifice layer 483, thereby make bridge leg 420, infrared reflecting layer 430, thermally sensitive layer 450 and infrared absorption layer 470 parts unsettled, and described infrared absorption layer 470 forms the resonator cavity for incident infrared light with described infrared reflecting layer 430, and described thermally sensitive layer 450 is arranged in described resonator cavity.Can adopt the method for selective corrosion or selective dissolution to remove described the first sacrifice layer 481, the second sacrifice layer 482 and the 3rd sacrifice layer 483.The resonator cavity that described infrared absorption layer 470 and described infrared reflecting layer 430 form, it is along the degree of depth perpendicular to substrate 400 directions, along the degree of depth of incident light direction, should be 1/4 of incident infrared light wavelength, to form infrared waves incident resonator cavity, strengthen the ir-absorbance of thermally sensitive layer 450.
With reference to the structural representation that is infrared detector with micro-bridge structure described in this embodiment shown in accompanying drawing 4G, comprise substrate 400, bridge leg 420, infrared reflecting layer 430, thermally sensitive layer 450 and infrared absorption layer 470.The upper surface of described 400 substrates is provided with electrode.Described bridge leg 420 adopts conductive material to make, and described bridge leg 420 supports and is arranged at described substrate 400 tops, and the strong point is positioned at electrode 411 and 412 places of described substrate 400 upper surfaces, thereby is connected with described electrode 411 and 412 electricity.Described thermally sensitive layer 450 is arranged at described bridge leg 420 tops, and supporting by the electrical connection support 460 being arranged in described thermally sensitive layer 450 through holes the surface that is arranged at described bridge leg 420, described electrical connection support 460 is connected with described bridge leg 420 and then with the electricity of described electrode 411 and 412 for described thermally sensitive layer 450.Described infrared reflecting layer 430 is arranged between described bridge leg 420 and described thermally sensitive layer 450, and the lower surface laminating with described thermally sensitive layer 450 overhanging portions by dielectric layer 440.Described infrared absorption layer 470 supports and is arranged at the top of described thermally sensitive layer 450, and forms the resonator cavity for incident infrared light with described infrared reflecting layer 430, and described thermally sensitive layer 450 is arranged in described resonator cavity.
The advantage of said structure is the form of described bridge leg 420 and described infrared reflecting layer 430, infrared absorption layer 470 hierarchical design.Described infrared absorption layer 470 has almost been covered with all horizontal spaces of device, and described thermally sensitive layer 450 is except the space being preserved for through described electrical connection support 460, also all horizontal spaces of device have almost been covered with, so said structure has increased the design space of small size picture dot effectively.Described infrared absorption layer 470 and special infrared reflecting layer 430 form the resonator cavity for incident infrared light, have strengthened infrared absorption efficiency.Described thermally sensitive layer 450 and described bridge leg 420 are isolated, and have avoided the impact of thermal effect on described thermally sensitive layer 450.Therefore said structure can increase device ir-absorbance when reducing device thermal conductance, has improved the filling rate of device, solves resonator cavity defect, thereby has improved the hot isolation effect of device and responsiveness, optimized device performance.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (14)
1. an infrared detector with micro-bridge structure, is characterized in that, comprising:
Substrate, the upper surface of described substrate is provided with electrode;
Bridge leg, described bridge leg adopts conductive material to make, and described bridge leg supports and is arranged at described substrate top, and the strong point is positioned at the electrode place of described substrate top surface, thereby is connected with described electrode electricity;
Thermally sensitive layer, described thermally sensitive layer is arranged at described bridge leg top, and by being arranged on electrical connection stent support in described thermally sensitive layer through hole, being arranged at the surface of described bridge leg, described electrical connection support is connected with described bridge leg and then with the electricity of described electrode for described thermally sensitive layer;
Infrared reflecting layer, described infrared reflecting layer is arranged between described bridge leg and described thermally sensitive layer, and by the lower surface laminating of dielectric layer and described thermally sensitive layer overhanging portion;
Infrared absorption layer, described infrared absorption layer supports the surface that is arranged at described thermally sensitive layer, absorb incident infrared light, change into heat and conduct to described thermally sensitive layer, described infrared absorption layer further forms the resonator cavity for incident infrared light with described infrared reflecting layer.
2. infrared detector with micro-bridge structure according to claim 1, is characterized in that, in the body part of described bridge leg the first plane parallel with substrate in, and by the stent support being certainly bent to form, is arranged at the surface of described electrode.
3. infrared detector with micro-bridge structure according to claim 1, it is characterized in that, described thermally sensitive layer is with the body part of electrical connection support in second plane parallel with substrate, and described electrical connection support is further arranged at the surface of described bridge leg by the stent support being certainly bent to form.
4. infrared detector with micro-bridge structure according to claim 1, is characterized in that, the body part of described infrared absorption layer, in three plane parallel with substrate, and is arranged at the surface of described thermally sensitive layer by the stent support being certainly bent to form.
5. infrared detector with micro-bridge structure according to claim 1, is characterized in that, the surface of described substrate, bridge leg, thermally sensitive layer and infrared absorption layer further has overlayer.
6. infrared detector with micro-bridge structure according to claim 1, is characterized in that, the material of described bridge leg is selected from any one in titanium, titanium nitride and tantalum.
7. infrared detector with micro-bridge structure according to claim 1, is characterized in that, the material of described thermally sensitive layer is selected from any one in amorphous silicon and vanadium oxide.
8. infrared detector with micro-bridge structure according to claim 1, is characterized in that, the material of described electrical connection support is selected from any one in titanium, tantalum, nickel, chromium, titanium nitride and nickel-chrome.
9. infrared detector with micro-bridge structure according to claim 1, is characterized in that, the material of described infrared reflecting layer is selected from any one in aluminium, silver and gold.
10. infrared detector with micro-bridge structure according to claim 1, is characterized in that, the material of described infrared absorption layer is selected from any one in titanium nitride and nickel-chrome.
The method for making of 11. 1 kinds of infrared detector with micro-bridge structure, is characterized in that, comprises the steps:
Substrate is provided, in the surface of described substrate, is provided with electrode;
At substrate surface, make bridge leg, the overhanging portion of described bridge leg is by separation between the first sacrifice layer and described substrate;
On bridge leg surface, make patterned infrared reflecting layer, described infrared reflecting layer is by separation between the second sacrifice layer and described bridge leg;
Surface at described infrared reflecting layer makes dielectric layer;
The electrical connection support of making thermally sensitive layer and being connected with thermally sensitive layer on described dielectric layer surface, described electrical connection support is formed in the through hole in described thermally sensitive layer, through gap and the dielectric layer of described patterned infrared reflecting layer, support the surface that is arranged at described bridge leg;
Surface at described thermally sensitive layer makes infrared absorption layer, and the overhanging portion of described infrared absorption layer is by separation between the 3rd sacrifice layer and described thermally sensitive layer;
Remove described the first sacrifice layer, the second sacrifice layer and the 3rd sacrifice layer, thereby make bridge leg, infrared reflecting layer, thermally sensitive layer and infrared absorption layer segment unsettled, and described infrared absorption layer and described infrared reflecting layer form the resonator cavity for incident infrared light.
The method for making of 12. infrared detector with micro-bridge structure according to claim 11, is characterized in that, in the body part of described bridge leg the first plane parallel with substrate in, and by the stent support being certainly bent to form, is arranged at the surface of described electrode.
The method for making of 13. infrared detector with micro-bridge structure according to claim 11, it is characterized in that, described thermally sensitive layer is with the body part of electrical connection support in second plane parallel with substrate, and described electrical connection support is further arranged at the surface of described bridge leg by the stent support being certainly bent to form.
The method for making of 14. infrared detector with micro-bridge structure according to claim 11, it is characterized in that, the body part of described infrared absorption layer, in three plane parallel with substrate, and is arranged at the surface of described thermally sensitive layer by the stent support being certainly bent to form.
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