CN106373941A - Detection sensor and manufacturing method thereof - Google Patents
Detection sensor and manufacturing method thereof Download PDFInfo
- Publication number
- CN106373941A CN106373941A CN201510443737.5A CN201510443737A CN106373941A CN 106373941 A CN106373941 A CN 106373941A CN 201510443737 A CN201510443737 A CN 201510443737A CN 106373941 A CN106373941 A CN 106373941A
- Authority
- CN
- China
- Prior art keywords
- layer
- connector
- interconnection layer
- upper strata
- detection sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a detection sensor, which comprises a semiconductor substrate, an isolation layer formed on the semiconductor substrate, an interconnection layer formed on the isolation layer, a first plug formed on the semiconductor substrate, located in the isolation layer and the interconnection layer and electrically connected with the interconnection layer, a conductive gasket formed on the interconnection layer and electrically connected with the interconnection layer, an upper sacrificial layer located on the interconnection layer and covering the first plug and the conductive gasket, a second plug formed on the upper sacrificial layer and whose bottom part is electrically connected with the conductive gasket, and a sensing unit located on the upper sacrificial layer and electrically connected with the second plug. The invention also provides a detection sensor manufacturing method. According to the detection sensor and the manufacturing method thereof of the invention, the effective sensing area of the sensing unit can be effectively improved.
Description
Technical field
The present invention relates to micro-electromechanical system field, more particularly to a kind of detection sensor and its preparation side
Method.
Background technology
MEMS (microelectro mechanical systems, abbreviation mems) is in microelectronics skill
The research frontier of the multi-crossed disciplines growing up on the basis of art, is a kind of using semiconductor technology manufacture
The technology of micro-electro-mechanical device.Compared with traditional electro-mechanical device, mems device high temperature resistant, small size,
Low-power consumption aspect has fairly obvious advantage.Development through decades, it has also become it is great to attract attention in the world
One of sciemtifec and technical sphere, it is many that it is related to electronics, machinery, material, physicss, chemistry, biology, medical science etc.
Plant subject and technology, have broad application prospects.
In the preparation process of mems device, need to prepare simultaneously connector for connecting sensing unit and
For the connector of wiring, connector and the connector for connecting up for connecting sensing unit are located in same layer,
Connector for wiring occupies the area of plane of part, thus causing the actual induction area of sensing unit relatively
Little it is impossible to meet the requirement of mems device.
Content of the invention
It is an object of the invention to, a kind of preparation method of detection sensor is provided, sense can be effectively improved
Answer the actual induction area of unit.
For solving above-mentioned technical problem, the present invention provides a kind of detection sensor, comprising:
Semiconductor base；
Sealing coat, is formed on described semiconductor base；
Interconnection layer, is formed on described sealing coat；
First connector, is formed on described semiconductor base, and is located in described sealing coat and interconnection layer, institute
State the first connector to electrically connect with interconnection layer formation；
Conductive spacer, is formed on described interconnection layer, and electrically connects with the formation of described interconnection layer；
Upper strata sacrifice layer, on described interconnection layer, and covers described first connector and conductive spacer；
Second connector, is formed in the sacrifice layer of described upper strata, the bottom of described second connector and described conductive pad
Piece electrically connects；And
Sensing unit, is formed on the sacrifice layer of described upper strata, described sensing unit is electrically connected with described second connector
Connect.
Further, in described detection sensor, described sealing coat is lower floor's sacrifice layer, described sealing coat
Also form one first dielectric layer and interconnection layer between.
Further, in described detection sensor, the material of described interconnection layer is titanium, gold, tantalum, nickel,
One of cobalt, cadmium or arbitrarily several alloys in them.
Further, in described detection sensor, interconnect described in the top covering part of described first connector
The upper surface of layer.
Further, in described detection sensor, between described interconnection layer and upper strata sacrifice layer, also form one
Second dielectric layer.
According to the another side of the present invention, a kind of preparation method of detection sensor is also provided it is characterised in that
Including:
Semiconductor substrate is provided；
One sealing coat and an interconnection layer are sequentially formed on described semiconductor base；
Described semiconductor base forms one first connector, and a conductive spacer is formed on described interconnection layer,
Described first connector is located in described sealing coat and interconnection layer, and described first connector is formed with interconnection layer and electrically connects,
Described conductive spacer is formed with described interconnection layer and electrically connects；
One upper strata sacrifice layer formed on described interconnection layer, described upper strata sacrifice layer cover described first connector and
Conductive spacer；
Form one second connector, the bottom of described second connector and described conductive spacer in the sacrifice layer of described upper strata
Electrical connection；And
Sensing unit is formed on the sacrifice layer of described upper strata, described sensing unit is electrically connected with described second connector.
Further, in the preparation method of described detection sensor, described sealing coat is lower floor's sacrifice layer,
Also form one first dielectric layer between described sealing coat and interconnection layer.
Further, in the preparation method of described detection sensor, described semiconductor base forms one
First connector, and the step of a conductive spacer is formed on described interconnection layer include:
One insulating barrier with the first opening and the second opening is formed on described interconnection layer；
Remove partly described interconnection layer and sealing coat, to form first through hole in described interconnection layer and sealing coat,
Described first through hole is located in described first opening；
Deposition one first conducting film on described insulating barrier, the described first conducting film described first through hole of covering,
First opening and the second opening；
Graphically described first conducting film, is inserted with forming described first in described first opening and first through hole
Plug, and form described conductive spacer in described second opening；
Remove the described insulating barrier exposing.
Further, in the preparation method of described detection sensor, described interconnection layer and upper strata sacrifice layer it
Between also form one second dielectric layer.
Further, in the preparation method of described detection sensor, in the sacrifice layer of described upper strata, form one the
The step of two connectors includes:
One the 3rd dielectric layer and one second conducting film are sequentially formed on the sacrifice layer of described upper strata；
Graphically described second conducting film, the 3rd dielectric layer and upper strata sacrifice layer, described second conducting film,
Form the second through hole in 3rd dielectric layer and upper strata sacrifice layer；
Deposit one the 3rd conducting film, described 3rd conducting film covers described second through hole and the second conducting film；
Graphically described 3rd conducting film and the second conducting film, described to be formed at formation in described second through hole
Second connector；
Remove described 3rd dielectric layer exposing.
Compared with prior art, detection sensor that the present invention provides and preparation method thereof has the advantage that
In described detection sensor and preparation method thereof, the first connector for being connected up is formed at described
On semiconductor base, and it is located in described sealing coat and interconnection layer, described first connector and interconnection layer form electricity
Connect；The second connector for connecting sensing unit is formed at the institute of the upper strata interconnection layer of described sealing coat
State in the sacrifice layer of upper strata, the bottom of described second connector is electrically connected with described conductive spacer；Described second connector
Pass through described conductive spacer with described first connector and interconnection layer realizes electrical connection.In this application, by inciting somebody to action
Described first connector and the second connector are made in different interconnection layers, can prevent described first connector from taking institute
State the induction area of sensing unit, the effective area of the described sensing unit of raising effectively.
Brief description
Fig. 1 is the flow chart of the preparation method of detection sensor in one embodiment of the invention；
Fig. 2 to Figure 15 is the signal of device architecture in the preparation method of detection sensor in one embodiment of the invention
Figure.
Specific embodiment
Below in conjunction with schematic diagram, detection sensor of the present invention and preparation method thereof is retouched in more detail
State, which show the preferred embodiments of the present invention it should be appreciated that those skilled in the art can change here
The present invention of description, and still realize the advantageous effects of the present invention.Therefore, description below is appreciated that
Widely known for those skilled in the art, and it is not intended as limitation of the present invention.
In order to clear, whole features of practical embodiments are not described.In the following description, it is not described in detail public affairs
The function and structure known, because they can make the present invention chaotic due to unnecessary details.It will be understood that
It is necessary to make a large amount of implementation details to realize the specific objective of developer in the exploitation of any practical embodiments,
For example according to the restriction about system or about business, another embodiment is changed into by an embodiment.Separately
Outward it should think that this development is probably complicated and time-consuming, but for people in the art
It is only routine work for member.
Referring to the drawings the present invention more particularly described below by way of example in the following passage.According to following explanation and
Claims, advantages and features of the invention will become apparent from.It should be noted that, accompanying drawing is all using very simple
The form changed and all using non-accurately ratio, only in order to convenient, lucidly aid in illustrating the embodiment of the present invention
Purpose.
The core concept of the present invention is to provide a kind of detection sensor, comprising: semiconductor base；Sealing coat,
It is formed on described semiconductor base；Interconnection layer, is formed on described sealing coat；First connector, is formed at
On described semiconductor base, and it is located in described sealing coat and interconnection layer, described first connector and interconnection layer shape
Become electrical connection；Conductive spacer, is formed on described interconnection layer, and electrically connects with the formation of described interconnection layer；On
Layer sacrifice layer, on described interconnection layer, and covers described first connector and conductive spacer；Second connector,
It is formed in the sacrifice layer of described upper strata, the bottom of described second connector is electrically connected with described conductive spacer；And
Sensing unit, is formed on the sacrifice layer of described upper strata, described sensing unit is electrically connected with described second connector.
In described detection sensor, the first connector for being connected up is formed at described semiconductor base
On, and be located in described sealing coat and interconnection layer, described first connector is formed with interconnection layer and electrically connects；For
Second connector of connection sensing unit is formed at the described upper strata sacrifice of the upper strata interconnection layer of described sealing coat
In layer, the bottom of described second connector is electrically connected with described conductive spacer；Described second connector and described first
Connector passes through described conductive spacer and interconnection layer realizes electrical connection.In this application, by inserting described first
Plug and the second connector are made in different interconnection layers, can prevent described first connector from taking described sensing unit
Induction area, effectively raising described sensing unit effective area.
According to above-mentioned core concept, the present invention provides also a kind of preparation method of detection sensor, as Fig. 1 institute
Show, comprise the steps:
Step s11, provides semiconductor substrate；
Step s12, sequentially forms a sealing coat and an interconnection layer on described semiconductor base；
Step s13, forms one first connector on described semiconductor base, and forms one on described interconnection layer
Conductive spacer, described first connector is located in described sealing coat and interconnection layer, described first connector and interconnection layer
Form electrical connection, described conductive spacer is formed with described interconnection layer and electrically connects；
Step s14, forms a upper strata sacrifice layer on described interconnection layer, and described upper strata sacrifice layer covers described the
One connector and conductive spacer；
Step s15, in the sacrifice layer of described upper strata formed one second connector, the bottom of described second connector with described
Conductive spacer electrically connects；And
Step s16, described upper strata sacrifice layer forms sensing unit, described sensing unit and described second connector
Electrical connection.
Below in conjunction with Fig. 2 to Figure 15, illustrate detection sensor of the present invention and preparation method thereof, Fig. 2
To Figure 15 for device architecture in the preparation method of detection sensor in one embodiment of the invention schematic diagram.
First, carry out step s11, as shown in Fig. 2 providing semiconductor substrate 100, in the present embodiment,
Described detection sensor is Infrared Detectorss, so, include reading in described semiconductor base 100 integrated
The circuit structures such as circuit (read out ic).The material of described semiconductor base 100 can be monocrystal silicon, list
Brilliant germanium or monocrystalline germanium silicon ,-group element compound, monocrystalline silicon carbide etc..
Then, carry out step s12, as shown in figure 3, sequentially form on described semiconductor base 100 one every
Absciss layer 110 and an interconnection layer 120.Preferably, described sealing coat 110 is lower floor's sacrifice layer, described sealing coat
For convenience of the material removing, in the present embodiment, the material of described lower floor sacrifice layer is amorphous carbon to 110 material,
Amorphous carbon can be removed using the method for ashing, to facilitate and existing process compatible, but described isolation
The material of layer 110 is not limited to amorphous carbon, and for example, described sealing coat 110 can also be silicon oxide, nitrogen oxidation
The dielectric substances such as silicon, with the thought range of the present invention.Wherein, the material of described interconnection layer 120
For titanium, gold, tantalum, nickel, cobalt, cadmium one of them or arbitrarily several alloys in them, additionally, described
It can be titanium nitride etc. so that the good conductivity of described interconnection layer 120 that the material of interconnection layer 120 is opened, and
Infrared ray can be absorbed.In the present embodiment, because the material on described sealing coat 110 is amorphous carbon, such as
Fruit directly forms described interconnection layer 120 on described sealing coat 110, then the form of described interconnection layer 120 is poor.
So, preferably, also forming one first dielectric layer 111 between described sealing coat 110 and interconnection layer 120.
Described first dielectric layer 111 can be silicon nitride, and the heat capacity ratio of silicon nitride is relatively low, has good thermal insulation
Ability.
Then, carry out step s13, described semiconductor base 100 forms one first connector, and described
One conductive spacer is formed on interconnection layer 120, described first connector is located at described sealing coat 110 and interconnection layer 120
In, described first connector and interconnection layer 120 form and electrically connects, described conductive spacer and described interconnection layer 120
Form electrical connection.Wherein, described first connector is electrically connected with the circuit structure in described semiconductor base 100,
For wiring.Specifically, in the present embodiment, step s13 includes following sub-step:
Sub-step s131, as shown in figure 4, form one have the first opening 121a on described interconnection layer 120
With the insulating barrier 121 of the second opening 121b, specifically, first on described interconnection layer 120, deposit an insulating barrier
121, then again pass through patterning process, described insulating barrier 121 is formed described first opening 121a and
Second opening 121b；
Sub-step s132, as shown in figure 5, removing partly described interconnection layer 120 and sealing coat 110, at this
In embodiment, also remove partly described first dielectric layer 111, to be situated between in described interconnection layer 120, first electricity
Form first through hole 112, described first through hole 112 is opened positioned at described first in matter layer 111 and sealing coat 110
In mouth 121a, and the characteristic size (critical dimension, abbreviation cd) of described first through hole 112 is little
In described first opening 121a characteristic size so that in described first opening 121a and described first through hole
Form a step between 112；
Sub-step s133, as shown in fig. 6, depositing one first conducting film 130 on described insulating barrier 121,
Described first conducting film 130 covers described first through hole 112, the first opening 121a and the second opening 121b.
Wherein, the material of described first conducting film 130 can be the metal such as aluminum, copper.Conductive depositing described first
During film 130, because the filling capacity of described first conducting film 130 is limited, often described first lead
Electrolemma 130 can not be filled up completely with described first through hole 112, and forms hole 112a in described first through hole 112.
In the present embodiment, depositing between described first conducting film 130, can also elder generation's titanium deposition/titanium nitride be combined
Layer, to reduce interface resistance；
Sub-step s134, as shown in fig. 7, graphically described first conducting film 130, removes described first electricity
Described first conducting film 130 on dielectric layer 111, with described first opening 121a and first through hole 112
Described first connector 131 of interior formation, and form described conductive spacer 132 in described second opening 121b.
In sub-step s134, due to due to patterning process, described first dielectric layer 111 is gone back reserve part
Divide described first conducting film 130.In described first connector 131 ultimately forming, described first connector 131
Interconnection layer 120 described in the covering part of top upper surface, as shown in annular region in Fig. 7, be conducive to carrying
Conductive capability between high described first connector 131 and described interconnection layer 120；
Sub-step s135, as shown in figure 8, remove the described insulating barrier 121 exposing.In the present embodiment,
Described first through hole 112 and conductive spacer 132 are prepared by sub-step s131- sub-step s135, is conducive to carrying
The performance of high described interconnection layer 120 is so that described interconnection layer 120 is more solid.
Preferably, as shown in figure 9, forming one second dielectric layer 122 on the described interconnection layer 120 exposing,
To improve the performance of described interconnection layer 120, and protect described mutual in the technique of postorder removal upper strata sacrifice layer
Even layer 120.The material of described second dielectric layer 122 can be silicon nitride or silicon oxide etc..
Then, carry out step s14, as shown in Figure 10, a upper strata sacrifice is formed on described interconnection layer 120
Layer 140, in the present embodiment, forms a upper strata sacrifice layer 140, institute on described second dielectric layer 122
State upper strata sacrifice layer 140 and cover described first connector 131 and conductive spacer 132, and fill described hole 112a.
In the present embodiment, the material of described upper strata sacrifice layer 140 is amorphous carbon, and amorphous carbon can be using ashing
Method is removed, but the material of described upper strata sacrifice layer 140 is not limited to amorphous carbon.
Afterwards, carry out step s15, in described upper strata sacrifice layer 140, form one second connector, described second inserts
The bottom of plug is electrically connected with described conductive spacer 132.Specifically, in the present embodiment, step s15 includes
Following sub-step:
Sub-step s151, as shown in figure 11, sequentially forms one the 3rd electricity on described upper strata sacrifice layer 140 and is situated between
Matter layer 141 and one second conducting film 144, in the present embodiment, described 3rd dielectric layer 141 includes a nitrogen
SiClx layer 142 and monoxide layer 143, the material of described second conducting film 144 can be the metal such as aluminum, copper；
Sub-step s152, as shown in figure 11, graphically described second conducting film 144, the 3rd dielectric layer 141
With upper strata sacrifice layer 140, in described second conducting film 144, the 3rd dielectric layer 141 and upper strata sacrifice layer 140
Middle formation the second through hole 146.Specifically, in the present embodiment, can be first on described second conducting film 144
Deposit a mask layer, the material of described mask layer can be oxide；Then graphically described mask layer with shape
Become mask window, now, described second conducting film 144 is as etching barrier layer；Afterwards with described mask layer
For mask, graphically described second conducting film 144, the 3rd dielectric layer 141 and upper strata sacrifice layer 140,
Form described second through hole 146 under described mask window；
Sub-step s153, as shown in figure 12, deposits one the 3rd conducting film 150, described 3rd conducting film 150
Cover described second through hole 146 and the second conducting film 144, wherein, the material of described 3rd conducting film 150 can
Think the metals such as aluminum, copper.During depositing described 3rd conducting film 150, because the described 3rd is conductive
The filling capacity of film 150 is limited, and often described 3rd conducting film 150 can not be filled up completely with described second through hole
146, and form hole 146a in described second through hole 146；
Sub-step s154, as shown in figure 13, graphically described 3rd conducting film 150 and the second conducting film 144,
Form described second connector 151 to be formed in described second through hole 146；
Sub-step s155, as shown in figure 13, removes described 3rd dielectric layer 141 exposing.
Afterwards, carry out step s16, described upper strata sacrifice layer 140 forms sensing unit, described sensing unit
Electrically connect with described second connector 151.In the present embodiment, described detection sensor is Infrared Detectorss,
So described sensing unit is temperature responsive unit.Specifically, as shown in figure 14, formed using CVD method
4th dielectric layer 160, described 4th dielectric layer 160 covers described upper strata sacrifice layer 140, described 4th medium
The material of layer 160 is silicon nitride, or other dielectric materials being known to the skilled person.Using light
Carve, etching technics is patterned to described 4th dielectric layer 160；Then as shown in figure 15, form thermal sensation
Answer layer 170, described thermoinduction layer 170 covers described 4th dielectric layer 160, upper strata sacrifice layer 140, second
Connector 151, and fill described hole 146a, the material of described thermoinduction layer 170 is non-crystalline silicon or microcrystal silicon,
But it is not limited to non-crystalline silicon, microcrystal silicon or well known to a person skilled in the art other thermoinduction materials,
Described thermoinduction layer 170 passes through described second connector 151, conductive spacer 132 is realized and described interconnection layer 120
Be conductively connected, thus realizing being conductively connected of described sensing unit and described interconnection layer 120.In this enforcement
In example, described temperature responsive unit can also include structure known to some other, and this is those skilled in the art
It should be understood that therefore not to repeat here.
Through above-mentioned steps, define detection sensor 1 as shown in figure 15, comprising: semiconductor base 100；
Described sealing coat 110 and interconnection layer 120 are sequentially formed in 100 on described semiconductor base；Described first connector
131 are formed on described semiconductor base 100, and are located in described sealing coat 110 and interconnection layer 120, institute
State the first connector 131 to electrically connect with interconnection layer 120 formation；Described conductive spacer 132 is formed at described interconnection
On layer 120, and electrically connect with the formation of described interconnection layer 120；Described upper strata sacrifice layer 140 is located at described mutual
Even on layer 120, and cover described first connector 131 and conductive spacer 132；Described second connector 151 is formed
In described upper strata sacrifice layer 140, the bottom of described second connector 151 and described conductive spacer 132 are electrically connected
Connect；Described sensing unit is formed on described upper strata sacrifice layer 140, and described sensing unit is inserted with described second
Plug 151 electrical connection.Wherein, but the preferable preparation method of described detection sensor 1 is as described above, described
The preparation method of detection sensor 1 is not limited to scope disclosed above, and those of ordinary skill in the art can
To change to above-mentioned preparation method, as long as described detection sensor 1 can be obtained, also in the think of of the present invention
Within the scope of thinking.
In the present embodiment, for the first connector 131 being connected up and the second connector being used for infrared induction
151 are made in different interconnection layers, can prevent described first connector 131 from taking the sensing of described sensing unit
Area, the effective area of the described sensing unit of raising effectively.And, described first connector 131 and institute
State the second connector 151 and pass through described interconnection layer 120 realization electrical connection, the infrared signal detecting is derived.
In the present embodiment, in follow-up processing step, described upper strata sacrifice layer 140 can be removed, also may be used
To remove lower floor sacrifice layer, this be it will be appreciated by those skilled in the art that, therefore not to repeat here；And,
Described first connector 131 can also be electrically connected with other interconnection structures, and to realize connecting up, this is ability
The technical staff in domain is it should be understood that can be interconnected as needed connecting, therefore not to repeat here.
Obviously, those skilled in the art can carry out various changes and modification without deviating from this to the present invention
Bright spirit and scope.So, if the present invention these modification and modification belong to the claims in the present invention and
Within the scope of its equivalent technologies, then the present invention is also intended to comprise these changes and modification.
Claims (10)
1. a kind of detection sensor is it is characterised in that include:
Semiconductor base；
Sealing coat, is formed on described semiconductor base；
Interconnection layer, is formed on described sealing coat；
First connector, is formed on described semiconductor base, and is located in described sealing coat and interconnection layer, institute
State the first connector to electrically connect with interconnection layer formation；
Conductive spacer, is formed on described interconnection layer, and electrically connects with the formation of described interconnection layer；
Upper strata sacrifice layer, on described interconnection layer, and covers described first connector and conductive spacer；
Second connector, is formed in the sacrifice layer of described upper strata, the bottom of described second connector and described conductive pad
Piece electrically connects；And
Sensing unit, is formed on the sacrifice layer of described upper strata, described sensing unit is electrically connected with described second connector
Connect.
2. detection sensor as claimed in claim 1 is it is characterised in that described sealing coat is lower floor's sacrifice
Layer, also forms one first dielectric layer between described sealing coat and interconnection layer.
3. detection sensor as claimed in claim 1 it is characterised in that described interconnection layer material be titanium,
One of gold, tantalum, nickel, cobalt, cadmium or arbitrarily several alloys in them.
4. detection sensor as claimed in claim 1 is it is characterised in that the top of described first connector is covered
The upper surface of interconnection layer described in cover.
5. detection sensor as claimed in claim 1 is it is characterised in that described interconnection layer and upper strata are sacrificed
Also form one second dielectric layer between layer.
6. a kind of preparation method of detection sensor is it is characterised in that include:
Semiconductor substrate is provided；
One sealing coat and an interconnection layer are sequentially formed on described semiconductor base；
Described semiconductor base forms one first connector, and a conductive spacer is formed on described interconnection layer,
Described first connector is located in described sealing coat and interconnection layer, and described first connector is formed with interconnection layer and electrically connects,
Described conductive spacer is formed with described interconnection layer and electrically connects；
One upper strata sacrifice layer formed on described interconnection layer, described upper strata sacrifice layer cover described first connector and
Conductive spacer；
Form one second connector, the bottom of described second connector and described conductive spacer in the sacrifice layer of described upper strata
Electrical connection；And
Sensing unit is formed on the sacrifice layer of described upper strata, described sensing unit is electrically connected with described second connector.
7. the preparation method of detection sensor as claimed in claim 6 is it is characterised in that described sealing coat
For lower floor's sacrifice layer, between described sealing coat and interconnection layer, also form one first dielectric layer.
8. the preparation method of detection sensor as claimed in claim 6 is it is characterised in that partly lead described
Form one first connector in body substrate, and the step of a conductive spacer formed on described interconnection layer and include:
One insulating barrier with the first opening and the second opening is formed on described interconnection layer；
Remove partly described interconnection layer and sealing coat, to form first through hole in described interconnection layer and sealing coat,
Described first through hole is located in described first opening；
Deposition one first conducting film on described insulating barrier, the described first conducting film described first through hole of covering,
First opening and the second opening；
Graphically described first conducting film, is inserted with forming described first in described first opening and first through hole
Plug, and form described conductive spacer in described second opening；
Remove the described insulating barrier exposing.
9. the preparation method of detection sensor as claimed in claim 6 is it is characterised in that described interconnection layer
Also form one second dielectric layer and the sacrifice layer of upper strata between.
10. the preparation method of the detection sensor as described in any one in claim 6 to 9, its feature exists
In the step forming one second connector in the sacrifice layer of described upper strata includes:
One the 3rd dielectric layer and one second conducting film are sequentially formed on the sacrifice layer of described upper strata；
Graphically described second conducting film, the 3rd dielectric layer and upper strata sacrifice layer, described second conducting film,
Form the second through hole in 3rd dielectric layer and upper strata sacrifice layer；
Deposit one the 3rd conducting film, described 3rd conducting film covers described second through hole and the second conducting film；
Graphically described 3rd conducting film and the second conducting film, described to be formed at formation in described second through hole
Second connector；
Remove described 3rd dielectric layer exposing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510443737.5A CN106373941B (en) | 2015-07-24 | 2015-07-24 | Detection sensor and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510443737.5A CN106373941B (en) | 2015-07-24 | 2015-07-24 | Detection sensor and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106373941A true CN106373941A (en) | 2017-02-01 |
| CN106373941B CN106373941B (en) | 2019-05-31 |
Family
ID=57880971
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510443737.5A Active CN106373941B (en) | 2015-07-24 | 2015-07-24 | Detection sensor and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106373941B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101713688A (en) * | 2009-12-11 | 2010-05-26 | 中国电子科技集团公司第十三研究所 | MEMS non-refrigerated two-band infrared detector and preparation method thereof |
| US20100155601A1 (en) * | 2008-12-22 | 2010-06-24 | Electronics And Telecommunications Research Institute | Infrared sensor and method of fabricating the same |
| CN102169919A (en) * | 2011-03-17 | 2011-08-31 | 上海集成电路研发中心有限公司 | Detector and manufacturing method thereof |
| CN102983145A (en) * | 2012-12-07 | 2013-03-20 | 上海丽恒光微电子科技有限公司 | Infrared image sensor and forming method thereof |
| CN103759838A (en) * | 2014-01-13 | 2014-04-30 | 浙江大立科技股份有限公司 | Infrared detector of microbridge structure and method for manufacturing same |
-
2015
- 2015-07-24 CN CN201510443737.5A patent/CN106373941B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100155601A1 (en) * | 2008-12-22 | 2010-06-24 | Electronics And Telecommunications Research Institute | Infrared sensor and method of fabricating the same |
| CN101713688A (en) * | 2009-12-11 | 2010-05-26 | 中国电子科技集团公司第十三研究所 | MEMS non-refrigerated two-band infrared detector and preparation method thereof |
| CN102169919A (en) * | 2011-03-17 | 2011-08-31 | 上海集成电路研发中心有限公司 | Detector and manufacturing method thereof |
| CN102983145A (en) * | 2012-12-07 | 2013-03-20 | 上海丽恒光微电子科技有限公司 | Infrared image sensor and forming method thereof |
| CN103759838A (en) * | 2014-01-13 | 2014-04-30 | 浙江大立科技股份有限公司 | Infrared detector of microbridge structure and method for manufacturing same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106373941B (en) | 2019-05-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105612610B (en) | In conjunction with conductive interconnecting structure and related system, the device and method of negative thermal expansion material | |
| CN105814674B (en) | Device, system and for manufacturing the method for wearing substrate through vias and front side structure | |
| CN102689874A (en) | Three-dimensional integrated method of sensor array and signal processing circuits | |
| JP2012195514A (en) | Substrate with element, infrared sensor, and through electrode formation method | |
| CN109616458A (en) | Through electrode substrate and the semiconductor device for utilizing through electrode substrate | |
| US7868362B2 (en) | SOI on package hypersensitive sensor | |
| CN104659020A (en) | Electronic device incorporating a randomized interconnection layer | |
| Sato et al. | Novel surface structure and its fabrication process for MEMS fingerprint sensor | |
| CN104854694A (en) | Devices, systems, and methods related to forming through-substrate vias with sacrificial plugs | |
| KR20080003795A (en) | Junction-isolated vias | |
| TW201025501A (en) | Method of manufacturing through-silicon-via and through-silicon-via structure | |
| CN105977203A (en) | Semiconductor device and method for manufacturing the same | |
| CN102372249B (en) | Method for producing an electrical feedthrough in a substrate, and substrate having an electrical feedthrough | |
| CN107644838A (en) | Wafer three-dimensional integration lead technique and its structure for three-dimensional storage | |
| CN106206535A (en) | Semiconductor device and the manufacture method of semiconductor device | |
| CN104051424B (en) | Interconnection structure and its manufacture method for connecting tube core | |
| CN105895648A (en) | Integrated circuit and image sensing device having metal shielding layer and related fabricating method | |
| CN107644839B (en) | Wafer three-dimensional integration lead technique and its structure for three-dimensional storage | |
| CN107644841B (en) | Wafer three-dimensional integration lead technique and its structure for three-dimensional storage | |
| CN106373941A (en) | Detection sensor and manufacturing method thereof | |
| CN109148360B (en) | Manufacturing method of semiconductor device | |
| CN103794553B (en) | For manufacturing the method for electric plating through hole in the substrate and there is the substrate of electric plating through hole | |
| CN105845663B (en) | A kind of semiconductor devices and preparation method thereof and electronic device | |
| Agarwal et al. | Polysilicon interconnections (FEOL): Fabrication and characterization | |
| CN111243966B (en) | Flexible sensor manufacturing process and flexible sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230529 Address after: 323000 room 307, block B, building 1, No.268 Shiniu Road, nanmingshan street, Liandu District, Lishui City, Zhejiang Province Patentee after: Zhejiang Core Microelectronics Co.,Ltd. Address before: Room 501B, Building 5, 3000 Longdong Avenue, Zhangjiang High-tech Park, Pudong New Area, Shanghai, 201203 Patentee before: LEXVU OPTO MICROELECTRONICS TECHNOLOGY (SHANGHAI) Ltd. |