CN109596225A - A kind of infrared detector and preparation method thereof with high-effect resonant cavity - Google Patents
A kind of infrared detector and preparation method thereof with high-effect resonant cavity Download PDFInfo
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
- G01J5/024—Special manufacturing steps or sacrificial layers or layer structures
Abstract
The invention discloses a kind of infrared detector and preparation method thereof with high-effect resonant cavity, in order to improve chip integration, the resonant cavity of the detector is located inside silicon wafer, compared with traditional infrared sensitive detection parts, the only several microns of height of vacuum chamber locating for sensitive thin film, cavity space greatly reduces, it is easier to form and keep high vacuum, avoid sensitive layer heat loss caused by cross-ventilation.Sensitive layer film is located at resonant cavity middle, and upper reflecting layer is the semi-transparent semi-reflecting thin metal layer of upper substrate back；Lower reflecting layer is the thick metal layers of lower upper surface of substrate total reflection, and light reflects one in resonant cavity may pass through sensitive layer film twice back and forth, and the number for permitting the pass through sensitive layer film increases, and increases absorptivity.The preparation method in resonant cavity reflecting layer is conventional photoetching, plated film, etching process, and process is simply easily realized, and makes metal column respectively on two substrates, is finally assembled into resonant cavity with flip-chip bonding, technique is skilful, at low cost, precision is high.
Description
[technical field]
The invention belongs to technical field of photoelectric detection, and in particular to a kind of infrared detector with high-effect resonant cavity and
Preparation method.
[background technique]
Infrared imaging system is the system for generating scene image by the heat radiation of target and background, and energy 24 hours round-the-clock
Work, and hiding thermal target can be detected through camouflage.Infrared detector is the core component of infrared imaging system, can be with
Incident infrared signal is changed into electric signal and exported by photoelectric effect and pyroelectric effect.But it is integrated in order to further increase device
Degree, when being superimposed other silicon substrate detecting structures above infrared detector, due to infrared light during penetrating overlying material not
It can avoid existing and absorb, so that the infrared signal that infrared sensitive thin film receives weakens, to influence the detection efficient of detector.
Therefore it there is an urgent need to design new absorbing structure, further increases and penetrates the infrared signal that top structure enters infrared acquisition structure
Utilization rate.
[summary of the invention]
The present invention to solve the above-mentioned problems, provides a kind of infrared detector with high-effect resonant cavity and its preparation
Method, the upper surface of resonant cavity are the semi-transparent semi-reflecting film at other detecting structure back sides, and the lower surface of resonant cavity is back in integrated electricity
The total reflection film of upper surface of substrate where road.Compared with traditional infrared sensitive detection parts, the housing depth of the resonant cavity only number is micro-
Rice, cavity space greatly reduce, it is easier to form and keep high vacuum, avoid heat loss caused by cross-ventilation.In addition, humorous
The intracavitary sensitive layer that shakes is located at the middle of resonant cavity, the support column for drawing electric signal in addition to two around sensitive layer film it
Outside, without other materials being in direct contact with it, heat loss caused by heat transfer is reduced, makes temperature caused by directs signal
It rises and is converted to electric signal output as much as possible.And light reflects one back and forth in resonant cavity in the panel detector structure, and it can be with
Sensitive layer film is penetrated twice, to further increase detector to the absorption rate of infrared signal.
Above-mentioned purpose is arrived to realize, the present invention is achieved by the following scheme:
A kind of infrared detector with high-effect resonant cavity, including opposite upper substrate and lower substrate；Under upper substrate
Surface is provided with reflecting layer, and the upper surface of lower substrate is provided with lower reflecting layer；
Four angles of probe unit of upper substrate lower surface are disposed with A1、B1、C1And D1Four points, A1、B1、C1And D1Shape
At the first rectangle；Four angles of probe unit of lower upper surface of substrate are disposed with A2、B2、C2And D2Four points, A2、B2、C2And D2
Form the second rectangle, the size of the first rectangle and the second rectangle is identical and 4 positions are corresponding.A1And C1If there are two what is protruded
Upper metal column, A2And C2If there are two the lower metal columns protruded；Upper metal column and lower metal column are each perpendicular to substrate and lower lining
Bottom；When upper metal column and lower metal column are bonded, upper reflecting layer, lower reflecting layer, upper metal column and lower metal column form resonant cavity；It is humorous
Intracavitary fixed setting of shaking is parallel to the sensitive layer film of substrate and lower substrate；Between sensitive layer film and upper reflecting layer and
There is gap between sensitive layer film and lower reflecting layer；The lower section of lower substrate is to carry out detector signal processing to integrate with what is stored
Circuit.
A further improvement of the present invention is that:
Preferably, B2And D2There are two the support columns protruded for upper setting, common to support sensitive layer film；Sensitive layer film position
Middle position between upper substrate and lower substrate；Support column selects conductive metallic material.
Preferably, sensitive layer film with a thickness of 50-500nm, select infrared heat-sensitive material.
Preferably, the height of resonant cavity is the 1/4 of the infrared detector operation wavelength；When detector works in resonant cavity
Portion is vacuum.
Preferably, upper substrate and lower substrate are twin polishing silicon wafer；The upper surface of upper substrate is the material to infrared transparent
Material and structure, lower surface are to infrared semi-transparent semi-reflecting upper reflecting layer.
Preferably, the material in upper reflecting layer and lower reflecting layer selects metal；Upper reflecting layer with a thickness of 5-50nm, it is lower anti-
Penetrate layer with a thickness of 100-1000nm.
Preferably, it is provided with chromium thin film between upper substrate and upper reflecting layer, is provided between lower substrate and lower reflecting layer
Lower chromium thin film；Upper chromium thin film with a thickness of the 0.1 of upper reflector thickness；Lower chromium thin film is the 0.1 of lower reflector thickness.
Preferably, integrated circuit is divided into two layers, is processing circuit and storage circuit, wherein under processing circuit and lower substrate
Surface contact.
A kind of preparation method of the infrared detector with high-effect resonant cavity, comprising the following steps:
Step 1: preparing the upper chip architecture of resonant cavity；
It takes twin polishing silicon wafer as upper substrate, upper chromium thin film is deposited by electron beam evaporation method in the lower surface of upper substrate
And upper reflecting layer, resist coating post-exposure, development, wet etching, removal photoresist on upper reflecting layer, in completion chromium thin film and
Upper reflecting layer it is graphical；In resist coating, exposure, development, the rear baking again of upper reflection layer surface, conductive metal is then plated,
Remove photoresist, the A in upper reflecting layer1Place and C1Place forms two upper metal columns, and wherein the height of metal column is in resonant cavity work
The 1/8 of cardiac wave length；To prepare the upper chip architecture including reflecting layer and upper metal column on upper substrate, upper chromium thin film；
Step 2: preparing the lower chip architecture of resonant cavity；
Chromium thin film and lower reflecting layer in the case where the upper surface of lower substrate is deposited by electron beam evaporation method apply light in lower reflecting layer
Photoresist, exposure, development, rear bakings, wet etching, removal photoresist complete the graphical of chromium thin film and lower reflecting layer；Lower anti-
Upper surface resist coating, exposure, development, the rear baking again for penetrating layer, then plates conductive metal, removes photoresist, lower reflecting layer
A2Place and C2Place forms two lower metal columns, B2Place and D2Place forms two support columns；The height phase of lower metal column and support column
It together, is highly all the 1/8 of resonant cavity operating central wavelength；To prepare including lower substrate, lower chromium thin film, lower reflecting layer, under
The lower chip architecture of metal column and support column；
Step 3: preparing sensitive layer among resonant cavity；
The spin-on sacrificial layer on lower reflecting layer, the thickness of sacrificial layer is identical as the height of lower metal column, after sacrificial layer solidification
In two upper end of support column photoetching, etching aperture, sensitive layer film, sensitive layer film are deposited on sacrificial layer and support column end face
With a thickness of 50-500nm, then sensitive layer film is patterned, formed probe unit；Plasma etching removal is sacrificed
Layer, two angles of sensitive layer film lower surface are fixedly connected with two support columns, and rest part is hanging；
Step 4: being bonded upper and lower piece, form resonant cavity；
Upper metal column and lower metal column are bonded, resonant cavity is formed；The resonant cavity be upper reflecting layer, lower reflecting layer with it is upper
There is sensitive layer film in the cavity that metal column and lower metal column are constituted, intra resonant cavity center, and sensitive layer film is fixedly connected on branch
Dagger upper end.
Preferably, in step 1, the thickness of second of resist coating is higher than the height of upper metal column on upper reflecting layer；Step 2
In, the thickness of second of resist coating is higher than the height of lower metal column and support column on lower reflecting layer.
Compared with prior art, the invention has the following advantages:
The invention discloses a kind of infrared detector with high-effect resonant cavity, which is placed in silicon wafer for resonant cavity
Device integration not only can be improved in internal structure, but also can greatly improve infrared signal utilization rate.Resonant cavity is located at
Device inside, and sensitive layer film is located among resonant cavity, the gap between sensitive layer film and upper reflecting layer and lower reflecting layer
It is evacuated after device encapsulation, can be avoided heat dissipation caused by cross-ventilation, and the housing depth of the resonant cavity only has
A few micrometers, cavity space is small, it is easier to form and keep high vacuum.The metal layer of upper substrate back as upper reflecting layer,
Thinner thickness is semi-transparent semi-reflecting film；For the metal layer of upper surface on lower substrate as lower reflecting layer, thickness is thicker, to be all-trans
Penetrate film；Light penetrates semi-transparent semi-reflecting upper reflecting layer, into resonant cavity, passes through sensitive layer film, reaches lower reflecting layer, then up
Total reflection, again passes by sensitive layer film, so that light reflects one back and forth in resonant cavity, so that it may across intermediate sensitive layer
Twice, the number for permitting the pass through sensitive layer film increases film, to increase absorptivity.In traditional interior resonance chamber and outside
In resonant cavity absorbing structure, for sensitive layer film respectively as reflecting surface on resonant cavity and lower reflecting surface, light is anti-in this configuration
It penetrates one back and forth, only reaches to that sensitive layer film surface is primary, and light utilization efficiency is more of the invention low, and the sensitivity in traditional structure is thin
Reflecting layer is coated on film, thermal mass is big, and identical infrared signal is incident, and caused temperature rise and change in resistance are small, causes detector clever
Sensitivity is low.And cavity resonator structure proposed by the present invention can avoid the above problem.
Further, there are two support columns to support sensitive layer film for setting in resonant cavity, so that sensitive layer film is in resonance
It is intracavitary stable and firm, and it can be evacuated up and down, reduce the heat loss that cross-ventilation causes sensitive thin film..
Further, sensitive layer film with a thickness of 50-500nm, select infrared heat-sensitive material, play thermistor
Effect, as bolometer, quality volume is the smaller the better.The thickness of film cannot be too thick, and film is thicker, and thermal mass is bigger,
Cause to absorb identical infra-red radiation, temperature rise is small, reduces detector sensitivity；If the thickness of film is too thin, it is difficult to be supported.
Further, upper metal column and lower metal column height are all the 1/8 of resonant cavity service band central wavelength, therefore humorous
The height of vibration chamber is the 1/4 of the detector operation wavelength to form resonance standing wave, enhances the absorptivity of light in resonant cavity；
Further, the thickness in upper reflecting layer is limited to 5-50nm, and the thickness in lower reflecting layer is limited to 100-1000nm.On
Reflecting layer is semi-transparent semi-reflecting metal film, and lower reflecting layer is the metal film of total reflection.
Further, chromium thin film is had additional between each substrate and reflective metal layer, to increase silicon substrate and reflection gold
Belong to the adhesiveness between layer.
Further, upper metal column and lower metal column select conductive metal, wherein two pairs of metal columns are bonded in one respectively
Play support resonant cavity；Another two metal column supports sensitive layer film, measures sensitive layer film due to absorbing caused by infra-red radiation
Change in resistance, and connect with reading circuit below detecting structure, the infrared radiation signal detected is converted to electric signal, is guided to
The integrated circuit at the back side carries out signal processing.
Further, integrated circuit of the invention is divided into processing circuit and storage circuit, and processing circuit is put for signal
Big processing, noise reduction process, image generation, the identification of target and matching etc. calculate, and storage circuit is used for clarification of objective library and figure
As the storage of information.
The invention also discloses a kind of preparation method of infrared detector with high-effect resonant cavity, this method is single first
Chip architecture and lower chip architecture are solely prepared, then sacrificial layer is prepared in bottom sheet, etches contact hole, deposits sensitive thin film, removal
Sacrificial layer；Then by upper metal column and the corresponding bonding of lower metal column, the infrared detector with optical resonator is formed.The detection
Device structure novel, preparation flow is simple, and infrared detector detection efficient is improved.
Further, the thickness of second of resist coating in step 1 is higher than the height of upper metal column, and the in step 2
The thickness of secondary resist coating is higher than the height of lower metal column and support column, is for facilitating the removing of photoresist.
[Detailed description of the invention]
Fig. 1 is infrared absorption detector overall construction drawing of the invention；
Fig. 2 is the diagrammatic cross-section of resonant cavity of the invention；
Fig. 3 is the flat distribution map (Section A-A) in upper reflecting layer and upper metal column of the invention；
Fig. 4 is the flat distribution map (section C-C) in lower reflecting layer and lower metal column and support column of the invention；
Fig. 5 is the flat distribution map (section B-B) of sensitive layer film and lower metal column and support column of the invention；
Fig. 6 is the arrangement schematic diagram of resonant cavity and metal column of the invention；
Wherein: the upper substrate of 1-；The upper reflecting layer 2-；3- sensitivity layer film；Reflecting layer under 4-；Substrate under 5-；6- processing circuit；
7- storage circuit；8- integrated circuit；The upper metal column of 9-；Metal column under 10-；11- resonant cavity；The upper chromium thin film of 12-；Chromium is thin under 13-
Film；14- support column.
[specific embodiment]
The invention will be described in further detail with reference to the accompanying drawing:
Referring to Fig. 1 and Fig. 2, the invention discloses a kind of infrared detector with high-effect resonant cavity and its preparation sides
Method, the infrared detector include upper substrate 1 and lower substrate 5, and the lower surface of upper substrate 1 is provided with reflecting layer 2, lower substrate 5
Upper surface be provided with lower reflecting layer 4, the upper reflecting layer 2 of each detector cells is identical with lower 4 geomery of reflecting layer, material
Material is metal, upper reflecting layer 2 with a thickness of 5-50nm, be provided with chromium thin film 12 between upper substrate 1 and upper reflecting layer 2, on
Chromium thin film 12 with a thickness of the 1/10 of upper 2 thickness of reflecting layer；Lower reflecting layer 4 with a thickness of 100nm-1000nm, lower substrate 5 and under
Be provided with lower chromium thin film 13 between reflecting layer 4, lower chromium thin film 13 with a thickness of the 1/10 of lower 4 thickness of reflecting layer.
Section A-A shown in Figure 3, the lower surface of upper substrate 1 four angles of each probe unit are disposed with A1、B1、C1
And D1Four points, A1、B1、C1And D1Form the first rectangle；The section C-C shown in Figure 4, the upper surface probe unit of lower substrate 5
Four angles are disposed with A2、B2、C2And D2Four points, A2、B2、C2And D2Form the second rectangle, the first rectangle and the second rectangle
Size is identical and 4 positions are corresponding, it may be assumed that A1And A2It is corresponding, B1And B2It is corresponding, C1And C2It is corresponding, D1And D2It is corresponding；A1And C1On
If there are two the upper metal column 9 protruded, corresponding A2And C2On set that there are two the lower metal column 10 protruded, upper metal column 9 and lower gold
After belonging to the bonding of column 10, upper chip architecture and lower chip architecture can be fixedly connected with and, common support forms resonant cavity 11；B2And D2
There are two the support columns 14 protruded for upper setting, common to support sensitive layer film 3.Upper metal column 9, lower metal column 10 and support column 14
Length be the 1/8 of resonant cavity operating central wavelength, and be conductive metal, such as gold, silver, copper, aluminium；
Referring to Fig. 6, when upper metal column 9 and lower metal column 10 are bonded together, formed between upper substrate 1 and lower substrate 5
Cavity, the cavity and upper reflecting layer 2 and lower reflecting layer 4 collectively form resonant cavity 11, and upper metal column 9 and lower metal column 10 are support
Structure, while plaing a part of to limit resonant cavity height；When upper metal column 9 and lower metal column 10 are bonded together, housing depth
For the sum of upper metal column 9 and lower 10 length of metal column, i.e. the 1/4 of resonant cavity operating central wavelength, absorbed with forming resonant check；
Referring to fig. 2 with section B-B shown in Fig. 5, resonant cavity 11 is interior to be arranged the sensitivity for being parallel to substrate 1 and lower substrate 5
Layer film 3, sensitive layer film 3 are located in resonant cavity 11 some and are parallel in the plane of substrate 1 and lower substrate 5, be distributed in
Other regions in pixel in addition to upper metal column 9 and lower metal column 10, sensitive layer film 3 is preferably in 11 height of resonant cavity
Between position, the infrared thermal sensing material of the material selection of sensitive layer film 3, such as vanadium oxide, amorphous silicon, sensitive layer film 3
With a thickness of 50-500nm；When light enters resonant cavity 11, reflection one can pass through sensitive layer film 3 twice back and forth, thus
Increase absorptivity；Sensitive layer film 3 is straight with it without other around other than two are diagonally fixedly connected with support column 14
The material of contact reduces heat loss caused by heat transfer, is conducive to temperature rise caused by directs signal to greatest extent
Ground is converted to electric signal output.
Referring to Fig. 1, the lower surface of lower substrate 5 is fixedly installed integrated circuit 8, including processing circuit 6 and storage circuit 7,
The integrated circuit 8 electric signal that the infra-red radiation that sensitive layer film 3 is absorbed is converted to can be amplified processing and
Imaging.
Working principle:
The metal layer of upper substrate back is semi-transparent semi-reflecting film as upper reflecting layer, thinner thickness；Lower upper surface of substrate
For metal layer as lower reflecting layer, thickness is thicker, is total reflection film；Light penetrates semi-transparent semi-reflecting upper reflecting layer, into resonant cavity,
Across sensitive layer film, lower reflecting layer is reached, is totally reflected then up, again passes by sensitive layer film.Therefore light is in resonant cavity
Middle reflection one may pass through sensitive layer film twice back and forth, and the number for permitting the pass through sensitive layer film increases, to improve resonance
Chamber is to the utilization rate of light and the photoelectric conversion efficiency of entire infrared detector.
The preparation method of infrared detector of the invention specifically includes the following steps:
Step 1: preparing upper chip architecture
(1) it takes twin polishing silicon wafer as upper substrate 1, is deposited on the lower surface of upper substrate 1 using electron beam evaporation method
Upper chromium thin film 12, using electron beam evaporation method on upper chromium thin film 12 aluminum metal film, i.e., upper reflecting layer 2, upper chromium thin film 12
Can increase silicon substrate and aluminum metal film adhesiveness, upper chromium thin film 12 with a thickness of the 1/10 of upper 2 thickness of reflecting layer；In upper reflection
2 resist coating post-exposure of layer, wet etching, remove photoresist at development, graphical, the general of reflecting layer 2 and chromium thin film 12 in completion
The metal erosion of area of isolation is fallen between 9 near zone of metal column and two neighboring probe unit.In the present embodiment, aluminum metal film
With a thickness of 10nm, chromium thin film 1nm；
(2) photoresist is uniformly spin-coated on the surface of silicon with aluminum metal film of upper step preparation by spin coating photoresist
Upper (on upper reflecting layer 2), spin coating photoresist thickness is about 3 μm.20min is then toasted on 95 DEG C of hot plates and is then cooled to room
Temperature.
(3) it exposes, sample is exposed in litho machine.The figure exposed is two holes on probe unit one diagonal
(position where two upper metal columns 9).
(4) develop, the figure of photoetching then by the way that sample is impregnated 1min in developer solution, is then rinsed with deionized water
Fixing, is dried up with nitrogen gun.
(5) the then plating metal on upper step photoetching offset plate figure, metal does not completely fill out in hole, one as this example
Example, metal is 1.25 μm in hole, and about 3 μm of photoresist thickness, thicker than metal thickness is more.
(6) photoresist is removed.Sample is immersed in acetone and other organic solvent, the region of unfilled metal out of photoresist hole
Photoresist is dissolved.The metal layer on glue is eliminated while the glue of large area is removed, finally only in remaining photoresist hole
Upper metal column 9.
Step 2: preparing lower chip architecture
(1) chromium thin film 13 in the case where the upper surface of lower substrate 5 is using electron beam evaporation method deposition, is existed using electron beam evaporation method
Aluminum metal film on lower chromium thin film 13 descends reflecting layer 4, lower chromium thin film 13 can increase silicon substrate and aluminum metal film adheres to
Property, lower chromium thin film 13 with a thickness of 1/10th of lower 4 thickness of reflecting layer；Again in lower 4 upper surface resist coating of reflecting layer, exposure
Light, development, rear bakings, wet etching, removal photoresist complete the graphical of reflecting layer 4 and lower chromium thin film 13, thus by metal
The metal erosion of area of isolation is fallen between column 10 and 14 near zone of support column and two neighboring probe unit；In the present embodiment,
Reflector thickness can be 100nm, and chromium thin film is with a thickness of 10nm.
(2) spin coating photoresist.Photoresist is uniformly spin-coated on to the surface of silicon with aluminum metal film of upper step preparation
Upper (on lower reflecting layer 4), resist coating thickness is about 3 μm.20min is then dried at 95 DEG C and is then cooled to room temperature.
(3) it exposes.Gained print is exposed in litho machine.As an example of this example, the figure of exposure is detection
Four holes (position where lower metal column 10 and support column 14) on four angles of unit.
(4) develop, sample is impregnated into 1min in developer solution, then rinsed with deionized water and dried up with nitrogen gun.
(5) the then plating metal on the resulting photoetching offset plate figure of upper step, metal does not completely fill out gold in photoresist hole
Belong to, as an example of this example, about 3 microns of photoresist hole depth, metal is 1.25 μm in hole, i.e., photoresist thickness is about gold
Belong to twice of thickness thickness or more.
(6) photoresist is removed.Sample is immersed in acetone and other organic solvent, the area of unfilled metal out of photoresist hole
Photoresist is dissolved in domain.Metal layer on glue is eliminated while removing large area glue, finally the only lower metal column in remaining hole
10, support column 14.
Step 3: preparing sensitive layer
(1) spin-on sacrificial layer.The uniform spin-on sacrificial layer on the lower reflecting layer 4 that (5) step in above-mentioned steps two is formed,
The height for being applied to thickness and metal column 10 and support column 14 is equal, then solidifies；The material of the sacrificial layer includes that Photosensitive is poly-
Acid imide or non-photosensitivity type polyimides (PI), benzocyclobutene (BCB) etc..Then by lithography and etching, by metal column
The sacrificial layer removal of top covering, forms contact hole.
(2) sensitive layer film 3 is deposited.It will be aoxidized by the method or plasma reinforced chemical vapour deposition method of reactive sputtering
Other infrared heat-sensitive materials such as vanadium, amorphous silicon are deposited on cured sacrificial layer, and graphical to its by lithography and etching,
Form such as Fig. 5 shape.As an example of this example, sensitive 3 Thickness range 50nm to 500nm of layer film.Sensitive layer is thin
Film 3 be deposited on sacrificial layer upper surface and for support sensitive thin film support column 14 top, thus realize sensitive layer and support
Being fixedly connected between column 14.
(3) sacrificial layer is removed.Sacrificial layer is removed using oxygen plasma dry etching, is obtained by two support columns 14 and one
Piece rides over the detecting structure of the composition of the sensitive thin film 3 on support column 14.
Step 4: bonding fluctuating plate
Using reverse chip key binder, two upper metal columns 9 and two lower correspondences of metal column 10 are bonded together, simultaneously
Upper chip architecture and lower chip architecture are fixed together, and form resonant cavity 11, and resonant cavity height is the 1/4 of operating central wavelength,
Sensitive layer film 3 is in the centre of resonant cavity 11.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Within mind and principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of infrared detector with high-effect resonant cavity, which is characterized in that including opposite upper substrate (1) and lower substrate
(5)；The lower surface of upper substrate (1) is provided with reflecting layer (2), and the upper surface of lower substrate (5) is provided with lower reflecting layer (4)；
Four angles of probe unit of upper substrate (1) lower surface are disposed with A1、B1、C1And D1Four points, A1、B1、C1And D1It is formed
First rectangle；Four angles of probe unit of lower substrate (5) upper surface are disposed with A2、B2、C2And D2Four points, A2、B2、C2With
D2Form the second rectangle, the size of the first rectangle and the second rectangle is identical and 4 positions are corresponding；A1And C1If there are two protrusions
Upper metal column (9), A2And C2If there are two the lower metal columns (10) protruded；Upper metal column (9) and lower metal column (10) are vertical
In upper substrate (1) and lower substrate (5)；When upper metal column (9) and lower metal column (10) are bonded, upper reflecting layer (2), lower reflecting layer
(4), upper metal column (9) and lower metal column (10) composition resonant cavity (11)；Fixed setting is parallel to lining in resonant cavity (11)
The sensitive layer film (3) at bottom (1) and lower substrate (5)；Between sensitive layer film (3) and upper reflecting layer (2) and sensitive layer film
(3) there is gap between lower reflecting layer (4)；The lower section of lower substrate (5) is to carry out detector signal processing to integrate with what is stored
Circuit (8).
2. a kind of infrared detector with high-effect resonant cavity according to claim 1, which is characterized in that B2And D2On
It is arranged there are two the support column (14) protruded, it is common to support sensitive layer film (3)；Sensitive layer film (3) be located at upper substrate (1) and
Middle position between lower substrate (5)；Support column (14) selects conductive metallic material.
3. a kind of infrared detector with high-effect resonant cavity according to claim 1, which is characterized in that sensitive layer is thin
Film (3) with a thickness of 50-500nm, select infrared heat-sensitive material.
4. a kind of infrared detector with high-effect resonant cavity according to claim 1, which is characterized in that resonant cavity
(11) height is the 1/4 of the infrared detector operation wavelength；It is vacuum inside resonant cavity (11) when detector works.
5. a kind of infrared detector with high-effect resonant cavity according to claim 1, which is characterized in that upper substrate
(1) and lower substrate (5) is twin polishing silicon wafer；The upper surface of upper substrate (1) is the material and structure to infrared transparent, following table
Face is to infrared semi-transparent semi-reflecting upper reflecting layer (2).
6. a kind of infrared detector with high-effect resonant cavity according to claim 1, which is characterized in that upper reflecting layer
(2) and the material in lower reflecting layer (4) selects metal；Upper reflecting layer (2) with a thickness of 5-50nm, the thickness of lower reflecting layer (4)
For 100-1000nm.
7. a kind of infrared detector with high-effect resonant cavity according to claim 1, which is characterized in that upper substrate
(1) it is provided between upper reflecting layer (2) chromium thin film (12), it is thin to be provided with lower chromium between lower substrate (5) and lower reflecting layer (4)
Film (13)；Upper chromium thin film (12) with a thickness of the 0.1 of upper reflecting layer (2) thickness；Lower chromium thin film (13) is lower reflecting layer (4) thickness
0.1.
8. a kind of infrared detector with high-effect resonant cavity, feature described in -7 any one exist according to claim 1
In integrated circuit (8) is divided into two layers, is processing circuit (6) and storage circuit (7), wherein processing circuit (6) and lower substrate (5)
Following table face contact.
9. a kind of preparation method of the infrared detector with high-effect resonant cavity, which comprises the following steps:
Step 1: preparing the upper chip architecture of resonant cavity；
Take twin polishing silicon wafer as upper substrate (1), it is thin by the upper chromium of electron beam evaporation method deposition in the lower surface of upper substrate (1)
Film (12) and upper reflecting layer (2), resist coating post-exposure, development, wet etching, removal photoresist, complete on upper reflecting layer (2)
At the graphical of upper chromium thin film (12) and upper reflecting layer (2)；In upper reflecting layer (2) surface resist coating, exposure, aobvious again
Shadow, rear baking, then plate conductive metal, remove photoresist, the A of upper reflecting layer (2)1Place and C1Place forms two upper metal column (9),
Wherein the height of metal column (9) is the 1/8 of resonant cavity operating central wavelength；To prepare including upper substrate (1), upper chromium thin film
(12) the upper chip architecture of reflecting layer (2) and upper metal column (9) on；
Step 2: preparing the lower chip architecture of resonant cavity；
Chromium thin film (13) and lower reflecting layer (4) in the case where the upper surface of lower substrate (5) is deposited by electron beam evaporation method, in lower reflection
Layer (4) resist coating, exposure, development, rear baking, wet etching, removal photoresist complete lower chromium thin film (13) and lower reflecting layer
(4) graphical；Upper surface resist coating, exposure, development, rear baking again in lower reflecting layer (4), then plates conductive gold
Belong to, removes photoresist, the A of lower reflecting layer (4)2Place and C2Place forms two lower metal columns (10), B2Place and D2Place forms two branch
Dagger (14)；Lower metal column (10) is identical with the height of support column (14), is highly all the 1/8 of resonant cavity operating central wavelength；
To prepare including under lower substrate (5), lower chromium thin film (13), lower reflecting layer (4), lower metal column (10) and support column (14)
Chip architecture；
Step 3: preparing sensitive layer among resonant cavity；
The spin-on sacrificial layer on lower reflecting layer (4), the thickness of sacrificial layer is identical as the height of lower metal column (10), sacrificial layer solidification
Afterwards in two support column (14) upper end photoetching, etching aperture, sensitive layer film (3) is deposited on sacrificial layer and support column end face,
Sensitive layer film (3) with a thickness of 50-500nm, then sensitive layer film (3) is patterned, formed probe unit；Deng from
Son etching removal sacrificial layer, two angles of sensitive layer film (3) lower surface are fixedly connected with two support columns (14), rest part
Vacantly；
Step 4: being bonded upper and lower piece, form resonant cavity；
Upper metal column (9) and lower metal column (10) are bonded, formed resonant cavity (11)；The resonant cavity (11) is upper reflecting layer
(2), the cavity that lower reflecting layer (4) and upper metal column (9) and lower metal column (10) are constituted, resonant cavity (11) center of inside have sensitivity
Layer film (3), sensitive layer film (3) are fixedly connected on support column (14) upper end.
10. a kind of preparation method of infrared detector with high-effect resonant cavity according to claim 9, feature exist
In in step 1, the thickness of second of resist coating is higher than the height of upper metal column (9) on upper reflecting layer (2)；In step 2, under
The thickness of second of resist coating is higher than the height of lower metal column (10) and support column (14) on reflecting layer (4).
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| PCT/CN2019/120448 WO2020125324A1 (en) | 2018-12-20 | 2019-11-23 | Infrared detector with high-efficacy resonant cavity and preparation method therefor |
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| WO2020125324A1 (en) * | 2018-12-20 | 2020-06-25 | 西安工业大学 | Infrared detector with high-efficacy resonant cavity and preparation method therefor |
| CN113720483A (en) * | 2021-03-26 | 2021-11-30 | 北京北方高业科技有限公司 | Infrared detector pixel and infrared detector based on CMOS (complementary metal oxide semiconductor) process |
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| CN114088209A (en) * | 2021-03-26 | 2022-02-25 | 北京北方高业科技有限公司 | Infrared detector based on CMOS (complementary Metal oxide semiconductor) process |
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