CN210866199U - Uncooled broadband infrared polarization focal plane detector - Google Patents
Uncooled broadband infrared polarization focal plane detector Download PDFInfo
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- CN210866199U CN210866199U CN201921991323.6U CN201921991323U CN210866199U CN 210866199 U CN210866199 U CN 210866199U CN 201921991323 U CN201921991323 U CN 201921991323U CN 210866199 U CN210866199 U CN 210866199U
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Abstract
The utility model relates to an uncooled broadband infrared polarization focal plane detector, the detector includes pixel structure array and the grating structure array that pixel structure constitutes, 2N × 2N, wherein N is more than or equal to 1, and individual grating structure array is fixed through a pair of support column in pixel structure array top, grating structure array includes cantilever support and grating structure, cantilever support passes through the support column to be fixed in pixel structure array's top, grating structure corresponding each pixel structure setting respectively on cantilever support, constitute the grating structure array with the looks ranks quantity looks adaptation in the pixel structure array.
Description
Technical Field
The utility model belongs to the technical field of the uncooled infrared detector, concretely relates to uncooled broadband infrared polarization focal plane detector.
Background
The discovery and the use of the infrared detection technology greatly expand the range of human vision, and the infrared detection technology has wide application prospects in the aspects of information acquisition and substance analysis, while the traditional infrared detector is only sensitive to the intensity of infrared radiation, ignores information of other dimensions such as the polarization of the infrared radiation and the like, and can improve the detection capability and the information acquisition capability of an infrared detection system, particularly the capability in the aspects of target identification, classification and the like by detecting and utilizing the information of other dimensions such as the polarization and the like.
In recent years, researchers have developed infrared polarization detection systems based on optical systems such as a time division type, a division amplitude type, and a division wavefront type. Compared with an infrared polarization detection system, the monolithic integrated infrared polarization detector not only has small volume power consumption, but also has timeliness and application efficiency superior to system performance, but no mature monolithic integrated infrared polarization detector product exists at present. Therefore, the development of the pixel-level polarization-sensitive infrared detector is of great significance, and the application efficiency of the existing infrared detector in the aspects of artificial target identification, cloud and fog weather target search and the like is improved.
The existing monolithic integrated uncooled infrared polarization detector articles and patents mainly research and develop devices with long wave bands of 8-14 microns, but few broad-band uncooled infrared polarization sensitive detectors capable of covering medium waves of 3-5 microns and very long waves are realized, and infrared detectors capable of covering medium waves of 3-16 microns can not only exert the advantages of long-wave infrared detection, but also exert the advantages of medium waves of small interference of background radiation, and have great application requirements in the aspects of target identification, classification and the like.
SUMMERY OF THE UTILITY MODEL
In order to overcome the problems in the related technology at least to a certain extent, the application provides a non-refrigeration broadband infrared polarization focal plane detector which can fully cover a photosensitive element and realize high extinction ratio.
In order to achieve the above object, the present invention provides an uncooled broadband infrared polarization focal plane detector according to an embodiment of the present application, which includes an array formed by pixel structures and a grating structure array; the grating structure array is arranged on the pixel structure array;
the grating structure array comprises a cantilever support and a grating structure, wherein the cantilever support is fixed above the pixel structure array through support columns, the grating structure is arranged on the cantilever support corresponding to each pixel structure respectively to form a grating structure array matched with the number of rows and columns in the pixel structure array, the 2N × 2N grating structure array is fixed above the pixel structure array through a pair of support columns, and N is larger than or equal to 1.
Furthermore, the cantilever support is used for supporting the grating structure, and the cantilever support adopts Si3N4Preparing materials; the grating structures all adopt Si3N4And an Al material; or the grating structures all adopt Si3N4And an Au material.
Further, Si in the grating structure array3N4The thickness of the Al or Au material is between 0.1 and 0.3 μm, and the thickness of the Al or Au material is between 0.1 and 0.5 μm.
Further, in the smallest 2 × 2 grating structure array, the grating angles of four grating structures are set in two setting modes:
the first setting mode is as follows: the grating angles in the four grating structures are different by 45 degrees; or
The second setting mode is as follows: one of the grating structures is a blank area, and the grating angles in the other three grating structures have a difference of 45 degrees.
Further, the pixel structure comprises a bottom substrate and a double-support cantilever beam structure positioned on the bottom substrate, wherein a first metal electrode layer, a first metal reflecting layer and a first metal protective layer are arranged on the bottom substrate;
the double-support cantilever beam structure comprises a first medium layer, the first medium layer is far away from and arranged above the bottom substrate, the first medium layer is a support layer of the double-support cantilever beam structure, the support layer is downwards sunken and extends to the first metal electrode layer to form at least two accommodating spaces, and the first medium layer positioned at the bottom of the accommodating spaces is provided with through holes;
the pixel structure further comprises a second metal layer, a second metal electrode layer, a photosensitive layer and a second dielectric layer, wherein
The second metal layer is arranged below the first dielectric layer, the second metal electrode layer is covered and arranged in the accommodating space, and the second metal electrode layer is electrically connected with the first metal electrode layer through a through hole in the first dielectric layer; the photosensitive layer is positioned on the first dielectric layer and covers the second metal electrode layer arranged in the accommodating space, and the photosensitive layer is electrically connected with the second metal electrode layer; the second dielectric layer covers the photosensitive layer.
Further, the base substrate includes a wafer with focal plane readout circuitry, and the first metal electrode layer is in direct electrical connection with the readout circuitry disposed on the base substrate.
Further, the first metal electrode layer and the first metal reflecting layer are arranged on the bottom substrate, the area, which is covered by the supporting layer of the bottom end face of the accommodating space, on the bottom substrate is the first metal electrode layer, and the area, which is not covered by the supporting layer of the bottom end face of the accommodating space, on the bottom substrate is the first metal reflecting layer.
Furthermore, the top end part of the second metal electrode layer extending upwards out of the accommodating space is bent towards the periphery at the opening of the accommodating space.
Further, the first metal reflecting layer is made of Al or Au and the like, and the thickness of the first metal reflecting layer is 0.05-0.4 mu m; the second metal layer is made of TiN or NiCr and other materials, and the interval between the second metal layer and the bottom substrate is less than 1.5 mu m; the photosensitive layer adopts VOxThe material is prepared, and the thickness of the photosensitive layer is 50-150 nm; the second dielectric layer adopts Si3N4Or SiO2A dielectric material.
The utility model adopts the above technical scheme, pass through the support column with the grating structure array and fix the top of pixel structure array, grating structure corresponding each pixel structure setting respectively is in constitute the grating structure array with ranks quantity looks adaptation in the pixel structure array on the cantilever support the utility model discloses an aspect has realized through adding the second metal level that the wave band covers the broadband non-refrigeration infrared polarization sensitive detector pixel structure from the medium wave to very long wave, and on the other hand non-refrigeration broadband infrared polarization focal plane detector has not only solved traditional non-refrigeration infrared polarization detector and has not responded at the medium wave problem, makes the grating structure that 2N × 2N (N is greater than or equal to 1) adjacent pixel corresponds together through a dual bracing cantilever beam simultaneously, has that technology is simple relatively, covers abundant, can realize the advantage of high extinction ratio to photosensitive element.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and together with the description, serve to explain the principles of the application.
FIG. 1 is one of the schematic structural diagrams of the uncooled broadband infrared polarization focal plane detector of the present invention;
FIG. 2 is a second schematic structural view of the uncooled broadband infrared polarization focal plane detector of the present invention;
fig. 3 is one of the top schematic views of the detector 2 × 2 array of the present invention;
fig. 4 is a second schematic top view of an array of probes 2 × 2 according to the present invention;
fig. 5 is a schematic diagram of a pixel structure array of the present invention 2 × 2;
fig. 6 is a schematic side structure diagram of the pixel structure array of the present invention 2 × 2.
In the figure: 1. a pixel structure array; 2. an array of grating structures; 21. a cantilever support; 22. a grating structure; 23. a support pillar; 3. a pixel structure; 4. a second dielectric layer; 5. a base substrate; 6. a first metal electrode layer; 7. a first metal reflective layer; 8. a first metal protection layer; 9. a first dielectric layer; 10. a second metal layer; 11. a second metal electrode layer; 12. a photosensitive layer.
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present application. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the present application, as detailed in the appended claims.
As shown in fig. 1 and fig. 2, the present embodiment provides an uncooled broadband infrared polarization focal plane detector, where the detector includes a pixel structure array 1 and a grating structure array 2, the grating structure array 2 is disposed on the pixel structure array 1, and the 2N × 2N (where N is greater than or equal to 1) grating structure array 2 is fixed above the pixel structure array 1 through a pair of support pillars 23.
The grating structure array comprises a cantilever support 21 and a grating structure 22; the cantilever support 21 is fixed above the pixel structure array 1 through a support column 23; the grating structures 22 are respectively arranged on the cantilever support 21 corresponding to each pixel structure to form a grating structure array 2 matched with the number of rows and columns in the pixel structure array 1.
This implementationIn the example, the cantilever support 21 is fixed above the pixel structure array 1 through the support column 23, and is fixed through the diagonal position double support columns 23 corresponding to 2N × 2N (N is more than or equal to 1) pixels, the cantilever support 21 is used for supporting the grating structure array 2, and the cantilever support 21 adopts Si3N4The grating structure 22 is made of Si3N4And a material; or the grating structure 22 is made of Si3N4And Au material, wherein Si3N4The thickness is between 0.1 and 0.3 mu m; the thickness of Al or Au is 0.1-0.5 μm.
It should be added that in the smallest grating structure array 2 of 2 × 2 in this embodiment, the grating angles of the four grating structures are set in two ways, namely, in the first way, the grating angles in the four grating structures are different by 45 ° (0 °, 45 °, 90 ° and 135 ° as shown in fig. 3), or in the second way, one of the grating structures is blank, and the grating angles in the other three grating structures are different by 45 ° (0 °, 45 °, 90 ° and blank as shown in fig. 4), the grating period is not greater than 1 μm, and the duty ratio is preferably 1: 1.
As shown in fig. 5 and fig. 6, the pixel structure provided in this embodiment includes an underlying substrate 5 with a dedicated readout circuit, and a dual-support cantilever structure on the underlying substrate 5, wherein a first metal electrode layer 6, a first metal reflective layer 7, and a first metal protective layer 8 are disposed on the underlying substrate 5; the first metal reflecting layer 7 has high optical reflection characteristics, the first metal reflecting layer 7 is made of Al or Au, the thickness of the first metal reflecting layer 7 is 0.05-0.4 mu m, the first metal protective layer 8 covers the first metal reflecting layer 7, and the surface of the first metal reflecting layer 7 is prevented from being oxidized and damaged, and the first metal reflecting layer 7 is preferably made of TiN.
The double-support cantilever beam structure comprises a first medium layer 9, the first medium layer 9 is far away from the upper part of the bottom substrate 5, the first medium layer 9 is a support layer of the double-support cantilever beam structure, the support layer is downwards sunken and extends to the first metal electrode layer 6 to form at least two accommodating spaces, and the first medium layer 9 at the bottom of the accommodating spaces is provided with through holes (not shown in the figure).
In a preferred embodiment, the base substrate 5 comprises a wafer with a focal plane readout circuitry, and the first metal electrode layer 6 is electrically connected directly to the readout circuitry disposed on the base substrate 5. It should be added that the first metal electrode layer 6 and the first metal reflective layer 7 are disposed on the bottom substrate 5, an area on the bottom substrate 5 covered by the bottom end face support layer of the accommodating space is the first metal electrode layer 6, and an area on the bottom substrate 5 not covered by the bottom end face support layer of the accommodating space is the first metal reflective layer 7.
In this embodiment, the pixel structure 3 further includes a second metal layer 10, a second metal electrode layer 11, a photosensitive layer 12, and a second dielectric layer 4, where the second metal layer is formed on the photosensitive layer 12
The second metal layer 10 is arranged below the first dielectric layer 9, the second metal electrode layer 11 is covered and arranged in the accommodating space, and the second metal electrode layer 11 is electrically connected with the first metal electrode layer 6 through a through hole on the first dielectric layer 9; the photosensitive layer 12 is positioned on the first dielectric layer 9 and covers the second metal electrode layer 11 arranged in the accommodating space, and the photosensitive layer 12 is electrically connected with the second metal electrode layer 11; the second dielectric layer 4 overlies the photosensitive layer 12. In this embodiment, the top end of the second metal electrode layer 11 extending upward out of the accommodating space is bent toward the outer periphery at the opening of the accommodating space.
It should be added that the second metal layer 10 has an absorption and reflection function on infrared light, the second metal layer 10 is preferably made of TiN or NiCr, the space between the second metal layer 10 and the substrate is preferably less than 1.5 μm, the first dielectric layer 9 is a support layer of a double-support cantilever structure, and simultaneously plays a role in protecting the second metal electrode layer 11 and the photosensitive layer 12, preferably Si3N4The thickness of the material is 0.1-0.3 mu m, the second metal electrode layer 11 is electrically connected with the first metal electrode layer 6 through a through hole on the first dielectric layer 9, the second metal layer 10 has relatively high electrical conductivity and relatively low thermal conductivity, and preferably is a Ti or TiN material; a photosensitive layer 12 is located on the first dielectric layer 9 and electrically connected to the second metalThe electrode layer 11 is electrically connected, and the photosensitive layer 12 is VOxThe thickness of the material is 50-150 nm, the second dielectric layer 4 covers the photosensitive layer 12 and plays a role in protecting the photosensitive layer 12, and the second dielectric layer 4 can be selected from Si3N4Or SiO2And the like.
On the other hand, in the double-support cantilever beam structure, the second metal layer 10 is a core for realizing broadband response, and has absorption and reflection effects on infrared light; the first dielectric layer 9 is a supporting layer of a double-support cantilever structure, and plays a role in protecting the second metal electrode layer 11 and the photosensitive layer 12.
According to the pixel structure provided by the embodiment, the double-support cantilever beam structure is thermally isolated from the substrate through the support column (the support layer sinks to form a concave accommodating space) and keeps good electrical connection. According to the method, the thin metal layer is added on the lower surface of the double-support cantilever beam structure, so that the response wave band of the device is greatly expanded, and the broadband uncooled infrared polarization sensitive pixel structure is realized.
The utility model adopts the above technical scheme, fix cantilever support 21 through support column 23 pixel structure array 1's top, grating structure is corresponding each pixel structure setting respectively and is in constitute on cantilever support 21 with pixel structure array 1 in the grating structure array 2 of ranks quantity looks adaptation the utility model discloses an aspect has realized through adding second metal level 10 that the wave band covers the broadband non-refrigeration infrared polarization sensitive detector pixel structure from the medium wave to very long wave, and on the other hand non-refrigeration broadband infrared polarization focal plane detector has not only solved traditional non-refrigeration infrared polarization detector at the unresponsive problem of medium wave, and the grating structure that simultaneously corresponds 2N × 2N (N is more than or equal to 1) adjacent pixel is in the same place through a dual bracing cantilever beam preparation, has the technology relatively simply, covers abundant, can realize the advantage of high extinction ratio to photosensitive element.
It is understood that the same or similar parts in the above embodiments may be mutually referred to, and the same or similar parts in other embodiments may be referred to for the content which is not described in detail in some embodiments.
Although embodiments of the present application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present application, and that variations, modifications, substitutions and alterations may be made to the above embodiments by those of ordinary skill in the art within the scope of the present application.
Claims (9)
1. An uncooled broadband infrared polarization focal plane detector is characterized by comprising a pixel structure array and a grating structure array, wherein the pixel structure array and the grating structure array are formed by pixel structures, the grating structure array is arranged on the pixel structure array, and a 2N × 2N grating structure array is fixed above the pixel structure array through a pair of supporting columns, wherein N is more than or equal to 1;
the grating structure array comprises a cantilever support and a grating structure; the cantilever support is fixed above the pixel structure array through a support column; the grating structures are respectively arranged on the cantilever bracket corresponding to each pixel structure to form a grating structure array matched with the number of rows and columns in the pixel structure array.
2. The uncooled broadband infrared polarized focal plane detector of claim 1, wherein: the cantilever support is used for supporting the grating structure and adopts Si3N4Preparing materials;
the grating structures all adopt Si3N4And an Al material; or
The grating structures all adopt Si3N4And an Au material.
3. The uncooled broadband infrared polarized focal plane detector of claim 2, wherein: si in the grating structure array3N4The thickness of the Al or Au material is between 0.1 and 0.3 μm, and the thickness of the Al or Au material is between 0.1 and 0.5 μm.
4. The uncooled broadband infrared polarization focal plane detector of claim 1, wherein in the smallest 2 × 2 grating structure array, the grating angles of four grating structures are set in two setting modes:
the first setting mode is as follows: the grating angles in the four grating structures are different by 45 degrees; or
The second setting mode is as follows: one of the grating structures is a blank area, and the grating angles in the other three grating structures have a difference of 45 degrees.
5. The uncooled broadband infrared polarized focal plane detector of any one of claims 1 to 4, wherein: the pixel structure comprises a bottom substrate and a double-support cantilever beam structure on the bottom substrate, wherein
A first metal electrode layer, a first metal reflecting layer and a first metal protective layer are arranged on the bottom substrate;
the double-support cantilever beam structure comprises a first medium layer, the first medium layer is far away from and arranged above the bottom substrate, the first medium layer is a support layer of the double-support cantilever beam structure, the support layer is downwards sunken and extends to the first metal electrode layer to form at least two accommodating spaces, and the first medium layer positioned at the bottom of the accommodating spaces is provided with through holes;
the pixel structure further comprises a second metal layer, a second metal electrode layer, a photosensitive layer and a second dielectric layer, wherein
The second metal layer is arranged below the first dielectric layer, the second metal electrode layer is covered and arranged in the accommodating space, and the second metal electrode layer is electrically connected with the first metal electrode layer through a through hole in the first dielectric layer; the photosensitive layer is positioned on the first dielectric layer and covers the second metal electrode layer arranged in the accommodating space, and the photosensitive layer is electrically connected with the second metal electrode layer; the second dielectric layer covers the photosensitive layer.
6. The uncooled broadband infrared polarized focal plane detector of claim 5, wherein: the bottom substrate includes a wafer with focal plane readout circuitry, and the first metal electrode layer is in direct electrical connection with the readout circuitry disposed on the bottom substrate.
7. The uncooled broadband infrared polarized focal plane detector of claim 5, wherein: the first metal electrode layer and the first metal reflecting layer are arranged on the bottom substrate, the area, covered by the supporting layer, of the bottom end face of the accommodating space on the bottom substrate is the first metal electrode layer, and the area, not covered by the supporting layer, of the bottom end face of the accommodating space on the bottom substrate is the first metal reflecting layer.
8. The uncooled broadband infrared polarized focal plane detector of claim 5, wherein: the top end part of the second metal electrode layer extending upwards out of the accommodating space is bent towards the periphery at the opening of the accommodating space.
9. The uncooled broadband infrared polarized focal plane detector of claim 5, wherein: the first metal reflecting layer is made of Al or Au materials, and the thickness of the first metal reflecting layer is 0.05-0.4 mu m;
the second metal layer is made of TiN or NiCr materials, and the interval between the second metal layer and the bottom substrate is less than 1.5 mu m;
the photosensitive layer adopts VOxThe material is prepared, and the thickness of the photosensitive layer is 50-150 nm;
the second dielectric layer adopts Si3N4Or SiO2A dielectric material.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111896122A (en) * | 2020-08-11 | 2020-11-06 | 烟台睿创微纳技术股份有限公司 | Polarization non-refrigeration infrared detector and preparation method thereof |
| CN113252173A (en) * | 2021-03-30 | 2021-08-13 | 武汉鲲鹏微纳光电有限公司 | Dual-mode detector pixel, uncooled infrared detector and using method of uncooled infrared detector |
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2019
- 2019-11-18 CN CN201921991323.6U patent/CN210866199U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111896122A (en) * | 2020-08-11 | 2020-11-06 | 烟台睿创微纳技术股份有限公司 | Polarization non-refrigeration infrared detector and preparation method thereof |
| CN113252173A (en) * | 2021-03-30 | 2021-08-13 | 武汉鲲鹏微纳光电有限公司 | Dual-mode detector pixel, uncooled infrared detector and using method of uncooled infrared detector |
| CN113252173B (en) * | 2021-03-30 | 2022-10-04 | 武汉鲲鹏微纳光电有限公司 | Dual-mode detector pixel, uncooled infrared detector and using method of uncooled infrared detector |
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