CN102393252A - Two-layer micrometering bolometer and manufacturing method thereof - Google Patents
Two-layer micrometering bolometer and manufacturing method thereof Download PDFInfo
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- CN102393252A CN102393252A CN2011102991768A CN201110299176A CN102393252A CN 102393252 A CN102393252 A CN 102393252A CN 2011102991768 A CN2011102991768 A CN 2011102991768A CN 201110299176 A CN201110299176 A CN 201110299176A CN 102393252 A CN102393252 A CN 102393252A
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Abstract
The invention discloses a two-layer micrometering bolometer, which comprises a microbridge structure, wherein the microbridge consists of two independent bridge decks, namely an upper bridge deck and a lower bridge deck; the upper bridge deck is provided with one or more layers of light absorbing materials; the lower bridge deck comprises a support and insulation layer, a metal electrode, a thermistor film and a passivation and regulation layer; a lower optical resonant cavity is formed between the lower bridge deck and a substrate; and an upper optical resonant cavity is formed between the upper bridge deck and the lower bridge deck. The two-layer micrometering bolometer is characterized in that: the upper bridge deck and the lower bridge deck are connected with two connecting posts; and the surface of the lower bridge deck is provided with a layer of metal transfer layer made of metal. The two-layer microbridge has higher light absorption rate and filling factor, and also has higher temperature uniformity and mechanical stability. The two-layer micrometering bolometer and the manufacturing method thereof can overcome the defects in the prior art, the working performance of a device is improved, and the two-layer micrometering bolometer is suitable for large-scale industrial production.
Description
Technical field
The present invention relates to the radiation detection technology field, be specifically related to a kind of micro-metering bolometer and preparation method thereof.
Background technology
Infrared eye is converted into detectable electric signal to sightless infrared emanation, realizes the observation of affairs to external world.Infrared eye is divided into two types of quantum detector and thermal detectors.Thermal detector is claimed the non-refrigeration type infrared eye again, can at room temperature work, and has in light weight, plurality of advantages such as integrated level is high, cost is low, good reliability, has wide practical use in field such as military, commercial and civilian.Non-refrigerated infrared detector mainly comprises three types of pyroelectricities, thermopair, thermistor; Wherein, Based on the micro-metering bolometer focus planardetector of thermistor, be developed recently very swift and violent, use very widely a kind of non-refrigerated infrared detector (referring to Leonard P. Chen, " Advanced FPAs for Multiple Applications " Proc. SPIE; 4721,1-15 (2002) document).
Terahertz detector is to be converted into detectable electric signal to the electromagenetic wave radiation of the longer terahertz wave band of wavelength (30 ~ 3000 μ m), realizes the observation of affairs to external world, has important military and civilian prospect equally.Terahertz also has the detector of multiple model, and wherein, non-refrigeration Terahertz micro-metering bolometer has and the similar structure of uncooled ir micro-metering bolometer, can obtain through the improvement to the latter; Be the importance used of Terahertz (referring to Linda Marchese, Martin Bolduc, Bruno Tremblay, Michel Doucet; Hassane Oulachgar, Lo c Le Noc, Fraser Williamson; Christine Alain, Hubert Jerominek, Alain Bergeron; " A microbolometer-based THz imager ", Proc. SPIE, 7671 76710Z-8 (2010) document).
Infrared or the terahertz emission detection process of micro-metering bolometer; Mainly accomplish through the micro-bridge structure that suspends; Ultimate principle is: light absorbing zone receives extraneous infrared or Terahertz heat radiation and causes the temperature of microbridge to change; The change of temperature changes the resistance of thermistor thin film, and the variation of this electric property is through electrode detection and be delivered to sensing circuit, accomplishes signal Processing, imaging.So the suspension microbridge is to influence the key factor that this type of detector is made success or failure and performance height.Wherein, the homogeneity of the planform of the kind of the membraneous material of formation suspension microbridge and performance, microbridge and parameter, bridge deck temperature, the stability of bridge leg and insulativity etc. are the significant effects factors.
Traditional uncooled microbolometer is made up of the individual layer microbridge that only contains one deck bridge floor, the U.S. Pat P 5286976 that declares referring to the Barrett E. Cole of Honeywell company that authorized on February 15th, 1994.The advantage of this individual layer microbridge is that simple in structure, stable performance, preparation technology realize easily.But, in this individual layer microbridge, sensitive layer (vanadium oxide or amorphous silicon membrane) and light absorbing zone (silicon nitride or the silicon oxide film) bridge floor that exists together, the area of light absorbing zone and the area of sensitive layer are with rising same falling.So,, need constantly increase the area of bridge floor in order to improve the absorptivity of microbridge; But; This will make the area of sensitive layer also constantly increase, thereby cause thermal mass increase, device performance to descend, and define the further raising of device performance; And the continuous increase of bridge floor area also constantly descends with the device cell size, the ever-increasing trend of integrated level is disagreed.So traditional individual layer microbridge can't satisfy the requirement of higher device performance.
For this reason; The U.S. Pat P 6667479 that the Michael Bay of Raytheon company that authorized on Dec 23rd, 2003 declares; Propose a kind of double-deck micro-bridge structure, be characterized in: this double-deck microbridge comprises up and down two independently bridge floors, wherein; Sensitive layer and light absorbing zone all concentrate on bridge floor, like the traditional single bridge deck structure; Following bridge floor only is made up of electrode and dielectric material, and down bridge floor is crooked (S type) structure, is hidden in the below of bridge floor, so, be named as S type double-decker.The crooked bridge leg of the S type of this double-deck microbridge is longer, so thermal insulation is better, its weak point is: (1) sensitive layer and light absorbing zone remain with rising with falling, and do not break through the limitation of conventional monolayers microbridge; (2) less stable of S type bridge leg influences device performance.
Another kind of typical double-deck microbridge is the U.S. Pat P 6307194 that the Eugene T. Fitzgibbons of Boeing company of mandate on Dec 23 calendar year 2001 declares.The characteristics of this double-deck microbridge are: the sensitive layer of device is in down bridge floor, and light absorbing zone is in bridge floor independently, and the joint pin through a heat conduction couples together between two bridge floors up and down, is beveled structure, so be named as the umbellate form double-decker.The advantage of the double-deck microbridge of this umbellate form is: (1) sensitive layer is separated with light absorbing zone fully, can change sensitive layer or light absorbing zone individually, has really overcome the sensitive layer of conventional monolayers microbridge and the limitation that light absorbing zone falls together with liter; (2) the firm, stable property of the double-deck microbridge of umbellate form is superior to the double-deck microbridge of S type that Raytheon company proposes; (3) umbrella-shaped structure less demanding to technology, and bridge short legs is suitable for large-scale production.Adopt the double-deck micro-metering bolometer of this umbellate form, improved the performance of non-refrigerated infrared detector.But; There is a significant disadvantages in the double-deck micro-metering bolometer of this umbellate form; Be that it only is connected by a joint pin between two bridge floors up and down, and, do not contain between joint pin and the following bridge floor increase the heat delivered of heat transfer property layer (referring to U.S. Pat P 6307194, reach document Chuan Li; Et al.; " Recent Development of Ultra Small Pixel Uncooled Focal Plane Arrays at DRS " Proc. SPIE, 6542,65421Y (2007)).Thisly constituted and do not had the major defect of the double-deck microbridge of umbellate form of heat delivered layer to be by single joint pin: a joint pin is difficult to guarantee that the whole temperature of bridge floor down distributes equably; That is to say; In the residing bridge floor down of sensitive layer; Have only the temperature in zone under the joint pin higher, and the temperature of its outer peripheral areas is lower; Owing to also there is not the heat delivered layer, temperature is more inhomogeneous in the distribution of whole bridge floor down.So the homogeneity of the following bridge deck temperature of the double-deck microbridge of this umbellate form is relatively poor.Non-uniform temperature will cause the variation of the electric property of thermistor material (like vanadium oxide) in the following bridge floor also inhomogeneous, and the output jitter influences device performance thus.
Summary of the invention
To above-mentioned prior art, the technical matters that the present invention will solve is: microbridge will satisfy the requirement of higher device performance; Sensitive layer is separated with light absorbing zone fully, can change sensitive layer or light absorbing zone individually; The temperature that guarantees sensitive layer bridge floor of living in distributes equably, stable output signal.
In order to solve the problems of the technologies described above, the present invention adopts following technical scheme: a kind of double-deck micro-metering bolometer is provided, comprises micro-bridge structure; This micro-bridge structure by two on last bridge floor and following bridge floor independently bridge floor form; The said bridge floor of going up is provided with one or more layers light absorbing material, and following bridge floor comprises support and insulation course, metal electrode, thermistor thin film, passivation and regulation and control layer, forms lower floor's optical resonator between following bridge floor and the substrate; Last bridge floor reaches and forms the upper strata optical resonator down between the bridge floor; It is characterized in that, be connected by two joint pins between last bridge floor and the following bridge floor, and the surface of bridge floor is provided with the heat delivered layer that one deck is made up of metal down.
Among the present invention; When the last bridge floor of said double-deck micro-metering bolometer microbridge is made up of one deck light absorbing material, adopt a kind of in the middle of silicon nitride film, silicon oxide film, amorphous silicon membrane, silicon oxynitride film, silicon nitride and five kinds of membraneous materials of monox laminated film.
Among the present invention; When the last bridge floor of said double-deck micro-metering bolometer microbridge was made up of the multilayer light absorbing material, the material of employing intersects one or more layers laminated film that constitutes by a kind of and metal level in the middle of silicon nitride, monox, amorphous silicon, silicon oxynitride, silicon nitride and the monox composite membrane to be formed.
In the present invention, the following bridge floor of said double-deck micro-metering bolometer microbridge comprises five layer film materials altogether: the bottom of following bridge floor is one deck amorphous silicon nitride films, as the support and the insulation course of microbridge; Up the second layer be one deck thermistor material, up the 3rd layer be the electrode of microbridge, perhaps the second layer be the electrode of microbridge, up the 3rd layer be one deck thermistor material; Up the 4th layer is another layer amorphous silicon nitride films, as passivation protection, and stress regulation and control layer; Layer 5 up, promptly descending the top layer of bridge floor is another layer metal level, covers the surface of amorphous silicon nitride passivation layer, as the control transfer of heat layer.
First kind of preparation method of the double-deck micro-metering bolometer that the present invention proposes may further comprise the steps:
1) cleans the monocrystalline silicon piece substrate that contains integrated circuit (ROIC), utilize reactor deposition one deck amorphous silica film as passivation layer.The thickness of silica coating is 100 ~ 2500 nm, and the best is 600 nm, 700 nm, 800 nm, 900 nm, 1000 nm;
2) on the surface of silicon dioxide passivation layer, utilize reactor to deposit the metallic aluminium that a layer thickness is 50 ~ 1000 nm, the best is 150 nm, 200 nm, 250 nm, 300 nm, 350 nm, 400 nm, 450 nm, 500 nm, as the reflection horizon of microbridge;
3) carve the pier pattern of microactuator suspension bridge in the surface light of above-mentioned metallic aluminium, this metal aluminium lamination of etching to following silicon dioxide passivation layer forms microbridge bridge pier hole and metallic aluminium isolated island;-
4) on the surface of above-mentioned metallic aluminium isolated island, the ground floor thickness of spin coating microbridge is the photosensitive polyimide film of 1-10 μ m, and the best is 1 μ m, 1.5 μ m, 2 μ m, 2.5 μ m, 3 μ m;
5) the ground floor Kapton is carried out photoetching treatment, form the bridge pier hole of Kapton isolated island and suspension microbridge;
6) on the surface in ground floor Kapton isolated island and bridge pier hole, utilize the ground floor amorphous silicon nitride film of bridge floor under the reactor deposition microbridge, thickness is 10 ~ 1500 nm, as the support and the insulating material of microbridge;
7) utilize reactor, on the surface of amorphous silicon nitride support membrane, preparation thickness is the thermistor thin film of the microbridge of 5 ~ 2000 nm;
8) utilize reactor, on the surface of thermistor thin film, the ground floor metal of bridge floor under the deposition microbridge, thickness is 10 ~ 1000 nm, and is graphical, as the electrode of microbridge;
9) utilize reactor, on the surface of thermistor thin film and metal electrode, the second layer amorphous silicon nitride film of bridge floor under the deposition microbridge, thickness is 10 ~ 1500 nm, as the passivation layer of electrode and thermosensitive film and the regulation and control layer of stresses of parts;
10) on the surface of amorphous silicon nitride passivation layer, utilizing the second layer thickness of bridge floor under the reactor deposition microbridge is the metal of 10 ~ 1000 nm, graphical, as the control transfer of heat layer;
11) carve the structure graph of bridge floor under the microactuator suspension bridge in the surface light of above-mentioned laminated film, this THIN COMPOSITE rete to ground floor polyimide layer of etching forms following bridge floor, bridge leg and the pier pattern of suspension microbridge;
The surface of the heat delivered layer that 12) constitutes by metal at following bridge floor, the second layer thickness of spin coating microbridge is the photosensitive polyimide film of 1 ~ 10 μ m, the best is 1 μ m, 1.5 μ m, 2 μ m, 2.5 μ m, 3 μ m;
13) second layer Kapton is carried out photoetching treatment, form the Kapton isolated island and be connected two joint pin holes of bridge floor up and down;
14) in the surface of second layer Kapton isolated island and two joint pin holes that are connected bridge floor up and down, utilize the light absorbing material of reactor deposition microbridge;
15) carve the structure graph of bridge floor on the double-deck microbridge that suspends in the surface light of above-mentioned light absorption film, this thin layer of etching forms the last bridge floor figure of the double-deck microbridge that suspends to second layer polyimide layer;
16) adopt oxygen plasma to remove up and down the ground floor and the second layer Kapton of two bridge floors and bridge leg figure below, form independently about two cavitys, two bridge floors up and down, constitute double-deck micro-metering bolometer.
Second kind of preparation method of the double-deck micro-metering bolometer that the present invention proposes may further comprise the steps:
1) cleans the monocrystalline silicon piece substrate that contains integrated circuit (ROIC), utilize reactor deposition one deck amorphous silica film as passivation layer.The thickness of silica coating is 100 ~ 2500 nm, and the best is 600 nm, 700 nm, 800 nm, 900 nm, 1000 nm;
2) on the surface of silicon dioxide passivation layer, utilize reactor to deposit the metallic aluminium that a layer thickness is 50 ~ 1000 nm, the best is 150 nm, 200 nm, 250 nm, 300 nm, 350 nm, 400 nm, 450 nm, 500 nm, as the reflection horizon of microbridge;
3) carve the pier pattern of microactuator suspension bridge in the surface light of above-mentioned metallic aluminium, this metal aluminium lamination of etching to following silicon dioxide passivation layer forms microbridge bridge pier hole and metallic aluminium isolated island;
4) on the surface of above-mentioned metallic aluminium isolated island, spin coating ground floor thickness is the photosensitive polyimide film of 1-10 μ m, and the best is 1 μ m, 1.5 μ m, 2 μ m, 2.5 μ m, 3 μ m;
5) the ground floor Kapton is carried out photoetching treatment, form the bridge pier hole of Kapton isolated island and suspension microbridge;
6) on the surface in ground floor Kapton isolated island and bridge pier hole, utilize the ground floor amorphous silicon nitride film of bridge floor under the reactor deposition microbridge, thickness is 10 ~ 1500 nm, as the support and the insulating material of microbridge;
7) utilize reactor, on the surface of amorphous silicon nitride support membrane, the ground floor metal of bridge floor under the deposition microbridge, thickness is 10 ~ 1000 nm, and is graphical, as the electrode of microbridge;
8) electrode is carried out after the backwash, utilizing reactor made thickness is the thermistor thin film of the microbridge of 5 ~ 2000 nm;
9) utilize reactor, on the surface of metal electrode and thermistor thin film, the second layer amorphous silicon nitride film of bridge floor under the deposition microbridge, thickness is 10 ~ 1500 nm, as the passivation layer of electrode and thermosensitive film and the regulation and control layer of stresses of parts;
10) on the surface of amorphous silicon nitride passivation layer, utilizing the second layer thickness of bridge floor under the reactor deposition microbridge is the metal of 10 ~ 1000 nm, graphical, as the control transfer of heat layer;
11) carve the structure graph of bridge floor under the microactuator suspension bridge in the surface light of above-mentioned laminated film, this THIN COMPOSITE rete to ground floor polyimide layer of etching forms following bridge floor, bridge leg and the pier pattern of suspension microbridge;
The surface of the heat delivered layer that 12) constitutes by metal at following bridge floor, the second layer thickness of spin coating microbridge is that the photosensitive polyimide film of 1-10 μ m, the best are 1 μ m, 1.5 μ m, 2 μ m, 2.5 μ m, 3 μ m;
13) second layer Kapton is carried out photoetching treatment, form the Kapton isolated island and be connected two joint pin holes of bridge floor up and down;
14) in the surface of second layer Kapton isolated island and two joint pin holes that are connected bridge floor up and down, utilize the light absorbing material of reactor deposition microbridge;
15) carve the structure graph of bridge floor on the double-deck microbridge that suspends in the surface light of above-mentioned light absorption film, this thin layer of etching forms the last bridge floor figure of the double-deck microbridge that suspends to second layer polyimide layer;
16) adopt oxygen plasma to remove up and down the ground floor and the second layer Kapton of two bridge floors and bridge leg figure below, form independently about two cavitys, two bridge floors up and down, constitute double-deck micro-metering bolometer.
Preparation method according to double-deck micro-metering bolometer provided by the present invention is characterized in that, in step 7) or 8) in, the electrode that microbridge adopted is metal A l or metal A u, Ti, TiN
x , TiSi
x , TiW
x , W, WSi
x , Ni, NiSi
x , Ta, TaN
x , a kind of in the middle of the Fe, Pt, Cu, Ag, NiCr alloy.When adopting metallic aluminium as the electrode of micro-metering bolometer microbridge, the thickness of electrode is 10 ~ 1000 nm, and the best is 50 nm, 100 nm, 150 nm, 200 nm, 250 nm, 300 nm, 350 nm, 400 nm etc.
Preparation method according to double-deck micro-metering bolometer provided by the present invention; It is characterized in that; In step 7) or 8) in, the thermistor material that microbridge adopted is a kind of in the middle of vanadium oxide film or thin film of titanium oxide, amorphous silicon membrane, vanadium oxide composite membrane, titanium oxide composite film, the amorphous silicon composite membrane.When adopting vanadium oxide as the thermistor material of micro-metering bolometer microbridge; The thickness of this thermistor thin film is 5 ~ 2000nm, and the best is 50nm, 80 nm, 100 nm, 120 nm, 150 nm, 200 nm, 250 nm, 300 nm, 350 nm, 400 nm, 450 nm, 500 nm etc.; The side resistance of thermistor thin film for ~ 500 Ω/50M Ω/, the best be 10 K Ω/, 20 K Ω/, 50 K Ω/, 80 K Ω/, 100 K Ω/, 120 K Ω/, 150 K Ω/, 170 K Ω/, 200 K Ω/, 300 K Ω/, 400 K Ω/, 500 K Ω/, 800 K Ω/, 1 M Ω/, 2 M Ω/, 3 M Ω/, 4 M Ω/, 5 M Ω/, 6 M Ω/, 7 M Ω/, 8 M Ω/, 9 M Ω/, 10 M Ω/etc.; The temperature-coefficient of electrical resistance of thermistor thin film is-0.5 ~-6.5%/K, the best is-1.5%/K ,-1.8%/K ,-1.9%/K ,-2.0%/K ,-2.1%/K ,-2.2%/K ,-2.5%/K ,-3.0%/K ,-3.5%/K ,-4.0%/K etc.
Preparation method according to double-deck micro-metering bolometer provided by the present invention is characterized in that, in step 10), the heat delivered layer of employing is metal A l or metal A u, Ti, TiN
x , TiSi
x , TiW
x , W, WSi
x , Ni, NiSi
x , Ta, TaN
x , in the middle of the Fe, Pt, Cu, Ag, NiCr alloy one or more.When adopting NiCr as the heat delivered layer of micro-metering bolometer microbridge; The thickness of this heat delivered layer is 10 ~ 1000 nm, and the best is 10 nm, 20 nm, 50 nm, 100 nm, 150 nm, 200 nm, 250 nm, 300 nm, 350 nm, 400 nm etc.
Preparation method according to double-deck micro-metering bolometer provided by the present invention is characterized in that, in step 14), the light absorbing material on the microbridge of employing in the bridge floor is made up of one or more layers light absorbing material.When bridge floor on the microbridge adopted one deck light absorbing material, the material of employing was a kind of composition the in the middle of one deck silicon nitride film or one deck silicon oxide film, amorphous silicon membrane, silicon oxynitride film, silicon nitride and five kinds of materials of monox laminated film; When bridge floor on the microbridge adopts the multilayer light absorbing material; The material that adopts is that one or more layers laminated film a kind of and that metal constitutes in the middle of silicon nitride or monox, amorphous silicon, silicon oxynitride, silicon nitride and the monox composite membrane is formed; Wherein, the metal of employing is metal A l or metal Fe, Co, Ni, Ti, TiN
x , TiO
x , V, VO
x , VN
x , in the middle of the Cr, Pt, Au, Cu, Ag, NiCr alloy one or more; The thickness of metal film is 10 ~ 500 nm, and the best is 5 nm, 10nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 120 nm, 150 nm, 200 nm, 250 nm, 300 nm, 350 nm, 400 nm etc.
Preparation method according to double-deck micro-metering bolometer provided by the present invention; It is characterized in that the silicon nitride support layer of bridge floor and passivation layer and the preparation feedback device of going up the silicon nitride light absorbing zone of bridge floor are wherein a kind of such as plasma enhanced chemical vapor deposition (PECVD) system or low-pressure chemical vapor deposition (LPCVD) system, high vacuum chemical vapour deposition (UHVCVD) system, electron beam evaporation system, laser deposition system, magnetic control sputtering system under the double-deck micro-metering bolometer microbridge.The thickness of the silicon nitride light absorbing zone of the silicon nitride film supporting layer of bridge floor and passivation layer and last bridge floor is 10 ~ 1500 nm under the said double-deck micro-metering bolometer microbridge, and the best is 50 nm, 100 nm, 150 nm, 200 nm, 250 nm, 300 nm, 350 nm, 400 nm, 450 nm, 500 nm, 600 nm, 700 nm, 800 nm etc.
Beneficial effect of the present invention shows:
One, can regulate through the height of two resonator cavitys up and down and strengthen absorption of incident light;
Two, adopt up and down and be connected with two joint pins between two bridge floors, can overcome the shortcoming of the poor temperature uniformity of the existing umbellate form bilayer microbridge that only contains single joint pin;
Three, adopt the heat delivered layer that constitutes by metal can further strengthen temperature homogeneity, improve the thermal property of device, and, the also further mechanical stability that improves microbridge;
Four, the area size through regulating two bridge floors up and down, the height ratio of two resonator cavitys and the factors such as the position of arranging of two joint pins up and down; Can be more prone to, trim performance more exactly, satisfy the special requirement of terahertz detector or infrared eye.
Description of drawings
Fig. 1 is the structural representation of traditional individual layer I type micro-metering bolometer microbridge;
Fig. 2 is the structural representation that only contains between a joint pin and joint pin and the following bridge floor not the double-deck micro-metering bolometer microbridge of umbellate form of the heat delivered layer that is made up of metal between traditional two bridge floors up and down: among the figure; (a) stereographic map of this bilayer microbridge; (b) planimetric map of the last bridge floor of this bilayer microbridge; (c) planimetric map of the following bridge floor of this bilayer microbridge, (d) sectional view of this bilayer microbridge;
Fig. 3 is the structural representation that contains the double-deck micro-metering bolometer microbridge that contains the heat delivered layer that one deck is made up of metal between two joint pins and joint pin and the following bridge floor between two bridge floors up and down of proposing of the present invention: among the figure; (a) stereographic map of this bilayer microbridge; (b) planimetric map of the last bridge floor of this bilayer microbridge; (c) planimetric map of the following bridge floor of this bilayer microbridge, (d) sectional view of this bilayer microbridge;
Fig. 4 is the simulation result of the absorptivity of different micro-metering bolometer microbridge with wavelength change.Wherein, 1L, 2L represent the result of the double-deck microbridge that traditional I type individual layer microbridge and the present invention propose respectively;
Fig. 5 is 20 W/m in identical intensity
2The radiant quantity effect under; The simulation result of the Temperature Distribution of bridge floor under the different double-deck microbridges: among the figure; (a) traditional have a double-deck microbridge of umbellate form that is not made up of metal between single joint pin and joint pin and the following bridge floor, and (b) the present invention proposes has the double-deck microbridge that contains the heat delivered layer that one deck is made up of metal between two joint pins and joint pin and the following bridge floor;
Fig. 6 is under the unrelieved stress effect of+100 MPa in identical intensity; The deformation emulating result of different microbridges: among the figure; (a) traditional I type individual layer microbridge; (b) the double-deck microbridge of traditional S type, (c) traditional umbellate form bilayer microbridge that contains between single joint pin and joint pin and the following bridge floor not the heat delivered layer that constitutes by metal, (d) the present invention's proposition contains the double-deck microbridge that contains the heat delivered layer that one deck is made up of metal between two joint pins and joint pin and the following bridge floor.
Wherein, 1, silicon substrate, 2, silicon dioxide passivation layer, 3, metallic aluminium reflection horizon; 410, ground floor Kapton, 420, second layer Kapton, 510, the ground floor silicon nitride film of bridge floor down, 520, metal electrode; 530, thermistor thin film, 540, the following second layer silicon nitride film of bridge floor, 550, metal heat transport layer, 6, bridge floor under the microbridge; 610, bridge floor bridge leg under the microbridge, 620, the microbridge bridge pier, 630, lower floor's optical resonator, 7, bridge floor on the microbridge; 710, bridge floor joint pin hole up and down, 720, go up the bridge floor silicon nitride layer, 730, bridge floor joint pin up and down, 740, go up the metal light absorption reinforcing material of bridge floor; 750, upper strata optical resonator, 8, the double-deck microbridge that suspends, 9, double-deck micro-metering bolometer.
Embodiment
To combine accompanying drawing and embodiment that the present invention is done further description below.
Adopt be connected through two joint pins and bridge floor contains the heat delivered layer that one deck is made up of metal down double-deck microbridge is made the micro-metering bolometer of terahertz detector or infrared eye provided by the present invention contain up and down between two independent bridge floors, two bridge floors; Have better optics, calorifics and mechanical property, can improve the combination property of device.
Embodiment
Making step of the present invention: (1) selects for use the silicon wafer that contains integrated circuit (ROIC) as substrate 1; After the cleaning back dries up with nitrogen; Put into plasma and strengthen (PECVD) system; Deposition one deck amorphous silica film is as passivation layer 2, and the thickness of silicon dioxide passivation layer is 100 ~ 2500 nm; (2) on the surface of silicon dioxide passivation layer, utilize magnetic control sputtering system, deposit the metallic aluminium that a layer thickness is 50 ~ 1000 nm, as the reflection horizon 3 of microbridge 8; (3) surface light in metallic aluminium reflection horizon 3 carves the figure of the bridge pier 620 of microactuator suspension bridge 8, and this metallic aluminium responding layer 3 of etching forms microbridge bridge pier hole and metallic aluminium isolated island to following silicon dioxide passivation layer 2; (4) on the surface of above-mentioned metallic aluminium responding layer 3, spin coating ground floor thickness is the photosensitive polyimide film 410 of 1-10 μ m; (5) ground floor Kapton 410 is carried out photoetching treatment, form the bridge pier hole of Kapton isolated island and suspension microbridge; (6) on the surface in Kapton isolated island and bridge pier hole, utilize PECVD 300
oUnder the C, deposit thickness is the ground floor amorphous silicon nitride 510 of bridge floor 6 under the microbridge of 10 ~ 1500 nm, as the support and the insulating material of suspension microbridge 8; (7) utilize reactor,, deposit the metallic aluminium that a layer thickness is 10 ~ 1000 nm on the surface of amorphous silicon nitride support membrane, graphical, as the electrode 520 of device; (8) electrode is carried out after the backwash, utilizing reactor made one layer thickness is the vanadium oxide film 530 of 5 ~ 2000nm, as the thermistor material and the light absorbing material of micro-metering bolometer; (9) utilize reactor; Surface at metal electrode 520 and thermistor thin film 530; The second layer amorphous silicon nitride film 540 of bridge floor 6 under the deposition microbridge, thickness is 10 ~ 1500 nm, as electrode 520 and the passivation layer of sensitive thin film 530 and the regulation and control layer of microbridge 8 stress; (10) utilize reactor to deposit the second layer metal 550 of bridge floor 6 under the microbridge, thickness is 10 ~ 1000 nm, and is graphical, as the control transfer of heat layer; (11) carve the structure graph of bridge floor under the microactuator suspension bridge in the surface light of above-mentioned laminated film, this THIN COMPOSITE rete to ground floor polyimide layer of etching forms following bridge floor 6, bridge leg 610 and bridge pier 620 figures of suspension microbridge; The surface of the heat delivered layer that (12) constitutes by metal at following bridge floor, the second layer thickness of spin coating microbridge is the photosensitive polyimide film 420 of 1-10 μ m; (13) second layer Kapton 420 is carried out photoetching treatment, form Kapton isolated island and two joint pin holes 710 of bridge floor up and down; (14) on the surface of second layer Kapton isolated island with up and down in two joint pin holes 710 of bridge floor; Utilize the 3rd layer of amorphous silicon nitride film 720 of reactor deposition microbridge; Thickness is 10 ~ 1500 nm, as the last bridge floor light absorbing material of microbridge and the joint pin 730 between the bridge floor up and down; (15) on the surface of above-mentioned silicon nitride film 720, utilizing the thickness of bridge floor on the reactor deposition microbridge is the Titanium 740 of 10 ~ 500 nm, as the light absorption reinforcing material; (16) surface light at above-mentioned composite membrane carves bridge deck structure 7 figures on the double-deck microbridge that suspends, this THIN COMPOSITE rete to second layer polyimide layer of etching, last bridge floor 7 figures of formation suspension microbridge 8; (17) ground floor 410 and the second layer 420 Kaptons of two bridge floors (7,6) and bridge leg 610 figures below about the employing oxygen plasma is removed, two cavitys (750,630) about the formation independently are as the optical resonator of device.Prepare double-deck micro-metering bolometer 9 thus.
As shown in Figure 3, contain two joint pins between two bridge floors up and down that the present invention proposes, bridge floor contains the double-deck uncooled microbolometer micro-bridge structure of the heat delivered layer that one deck is made up of metal down.As a comparison, Fig. 1 and 2 shows traditional individual layer I type microbridge and traditional having only between single joint pin and joint pin and the following bridge floor less than the double-deck micro-bridge structure of the umbellate form of the heat delivered layer that is made up of metal between two bridge floors up and down respectively.
As preferably: under the double-deck micro-metering bolometer microbridge that the present invention proposes the supporting layer of bridge floor and passivation layer and on the light absorbing zone of bridge floor, except silicon nitride (SiN
x ) film, can also be the monox (SiO of amorphous silicon (a-Si) film, other thickness and component
x ) film, silicon oxynitride (SiN
x O
y ) film, or the aluminium oxide (AlO that is known in the industry
x ) film, hafnia (HfO
x ) film, hafnium aluminum oxide (HfAlO
x ) wherein a kind of such as film and their composite membrane.
As preferably: microbridge electrode and heat delivered layer that the present invention proposes can be metal A l or metal A u, Ti, TiN
x , TiSi
x , TiW
x , W, WSi
x , Ni, NiSi
x , Ta, TaN
x , one or more the potpourri in the middle of the Fe, Pt, Cu, Ag, NiCr alloy.
As preferably: thermistor material of the present invention can be a kind of in the middle of vanadium oxide film or thin film of titanium oxide, amorphous silicon membrane, vanadium oxide composite membrane, titanium oxide composite film, the amorphous silicon composite membrane.The shape of the bridge leg of bridge floor does not receive special restriction yet under the microbridge that the present invention proposes, and can be a kind of in the middle of I type, L type, S type or other microactuator suspension bridge shape of being known in the industry.
Fig. 4 shows that at 3 ~ 14 mu m wavebands, the absorptivity of traditional individual layer microbridge (Fig. 1) is merely 0.50 ~ 0.58, and (Fig. 4 a).But at identical wave band, the absorptivity of the double-deck microbridge (Fig. 3) that the present invention proposes obviously is superior to traditional individual layer microbridge (Fig. 1) up to 0.78 ~ 0.88 (Fig. 4 b).So; Change the individual layer microbridge into double-deck microbridge (Fig. 3) proposed by the invention; The optical property of infrared eye is obviously promoted (absorptivity increases 34 ~ 76%), and its reason is that this bilayer micro-bridge structure (Fig. 3) comprises two optical resonators up and down, helps strengthening the absorption of photon; And the silicon nitride layer under the double-deck microbridge in the bridge floor can also continue to absorb the infrared radiation of the silicon nitride layer that penetrated bridge floor.In addition, the fill factor, curve factor higher (> 90% of the double-deck microbridge that the present invention shown in Figure 3 proposes), obviously be superior to traditional individual layer microbridge (50 ~ 60 %) shown in Figure 1.
Fig. 5 is radiant quantity (20 W/m in same intensity
2) effect under, when supposing that incident light is absorbed by microbridge fully, the simulation result of the Temperature Distribution of bridge floor under the different double-deck microbridges.Only contain between single joint pin and joint pin and the following bridge floor less than the double-deck microbridge (Fig. 2) of the umbellate form of the heat transfer layer that constitutes by metal between two bridge floors up and down for existing; In the residing bridge floor 6 down of thermistor material; The variation of temperature wide ranges reaches 48.1 ~ 57.7 mk, and
=(Fig. 5 a) for 9.6 mk.And under the same conditions; Contain the double-deck microbridge (Fig. 3) that contains the heat delivered layer that one deck is made up of metal between two joint pins and joint pin and the following bridge floor between two bridge floors up and down that adopt that the present invention proposes; Range of temperature of bridge floor 6 is 47.5 ~ 48.4 mk under it, is merely 1.1 mk (Fig. 5 b).Be worth more for a short time, explain that the homogeneity of temperature is good more, the resistance value of thermistor material 530 is even more, and the read output signal that spreads out of is stable more.So; The thermal property that contains the double-deck microbridge that contains the heat delivered layer that one deck is made up of metal between two joint pins and joint pin and the following bridge floor between two bridge floors up and down that the present invention shown in Figure 3 proposes obviously is superior to shown in Figure 2 containing the umbellate form bilayer microbridge that does not contain the heat transfer layer that is made up of metal between single joint pin and joint pin and the following bridge floor between two bridge floors about existing.
Fig. 6 result shows, is under the unrelieved stress effect of+100 PMa in identical intensity, the deformation maximal value of conventional monolayers I type microbridge (Fig. 1) be 0.03013 μ m Fig. 6 a).When identical unrelieved stress acted in the double-deck microbridge of existing S type, the maximal value of this double-deck microbridge deformation was up to 0.05124 μ m (Fig. 6 b), and (Fig. 6 a) to be higher than individual layer I type far away.Deformation values is big more, and the stability of micro-bridge structure is poor more.So, the less stable of the double-deck microbridge of S type.Under the same terms; The deformation maximal value that contains between existing up and down two bridge floors between single joint pin and joint pin and the following bridge floor less than the umbellate form bilayer microbridge (Fig. 2) of the heat transfer layer that is made up of metal is 0.02959 μ m (Fig. 6 c); Suitable with individual layer I type (Fig. 1), be superior to the double-deck microbridge of S type.If contain the double-deck micro-bridge structure that contains the heat delivered layer that one deck is made up of metal between two joint pins and joint pin and the following bridge floor between two bridge floors up and down that adopt that the present invention shown in Figure 3 proposes; Its deformation maximal value is 0.03454 μ m (Fig. 6 d); With traditional individual layer (Fig. 6 a) and the deformation values of the double-deck microbridge of existing umbellate form (Fig. 6 c) suitable; Far below the deformation values (Fig. 6 b) of the double-deck microbridge of existing S type, explain that the mechanical stability of the double-deck microbridge (Fig. 3) that the present invention proposes is good.
Through above analysis; The present invention proposes a kind of employing and contains two independent bridge floors (7,6) up and down and be connected, contain in the bridge floor down terahertz detector or the infrared eye micro-metering bolometer (9) that the special double-deck microbridge 8 (Fig. 3) of the heat delivered layer 550 that is made up of metal is made through two joint pins 730 between two bridge floors up and down; Can improve optics (absorptivity increase), the calorifics performances such as (temperature homogeneity are better) of micro-metering bolometer; Obtain more excellent combination property, meet the needs of terahertz detector or infrared eye.And the double-deck microbridge 8 (Fig. 3) that the present invention proposes just adds traditional handicrafts such as some follow-up spin coatings, photoetching, plated film on the basis of conventional monolayers I type microbridge (Fig. 1), the extensive manufacturing that technical difficulty is little, help device.
Claims (10)
1. double-deck micro-metering bolometer; Comprise micro-bridge structure, this micro-bridge structure by two on last bridge floor and following bridge floor independently bridge floor form, said on bridge floor be provided with one or more layers light absorbing material; Following bridge floor comprises support and insulation course, metal electrode, thermistor thin film, passivation and regulation and control layer; Form lower floor's optical resonator between following bridge floor and the substrate, last bridge floor reaches and forms the upper strata optical resonator down between the bridge floor, it is characterized in that; Be connected by two joint pins between last bridge floor and the following bridge floor, and the surface of bridge floor is provided with the heat delivered layer that one deck is made up of metal down.
2. double-deck micro-metering bolometer according to claim 1; It is characterized in that; Said when going up bridge floor and being made up of one deck light absorbing material, said light absorbing material is a kind of in the middle of silicon nitride film, silicon oxide film, amorphous silicon membrane, silicon oxynitride film, silicon nitride and five kinds of membraneous materials of monox laminated film.
3. double-deck micro-metering bolometer according to claim 1; It is characterized in that; When said last bridge floor is provided with multilayer light absorbing material institute; Structure is intersected one or more layers laminated film of formation by a kind of and metal level in the middle of silicon nitride, monox, amorphous silicon, silicon oxynitride, silicon nitride and the monox composite membrane and is formed, and wherein, the metal in the composite membrane is metal A l or metal Fe, Co, Ni, Ti, TiN
x , TiO
x , V, VO
x , VN
x , in the middle of the Cr, Pt, Au, Cu, Ag, NiCr alloy one or more.
4. double-deck micro-metering bolometer according to claim 1 is characterized in that, said bridge floor down comprises five layer film materials altogether, and the position concerns as follows: the bottom of following bridge floor is one deck amorphous silicon nitride films, as the support and the insulation course of microbridge; Up the second layer be one deck thermistor thin film, up the 3rd layer be metal electrode; Up the 4th layer is another layer amorphous silicon nitride films, as the passivation protection and the stress regulation and control layer of electrode and thermosensitive film; Up layer 5 is the heat delivered layer that is made up of metal, covers the surface of amorphous silicon nitride passivation layer.
5. double-deck micro-metering bolometer according to claim 1 is characterized in that, said bridge floor down comprises five layer film materials altogether, and the position concerns as follows: the bottom of following bridge floor is one deck amorphous silicon nitride films, as the support and the insulation course of microbridge; Up the second layer is a metal electrode; Up the 3rd layer is thermistor thin film; Up the 4th layer is another layer amorphous silicon nitride films, as the passivation layer of electrode and thermosensitive film and the regulation and control layer of stresses of parts; Up layer 5 is the heat delivered layer that is made up of metal, covers the surface of amorphous silicon nitride passivation layer.
6. according to claim 1,4 and 5 arbitrary described double-deck micro-metering bolometers, it is characterized in that described metal electrode is metal A l or metal A u, Ti, TiN
x , TiSi
x , TiW
x , W, WSi
x , Ni, NiSi
x , Ta, TaN
x , a kind of in the middle of the Fe, Pt, Cu, Ag, NiCr alloy.
7. according to claim 1,4 and 5 arbitrary described double-deck micro-metering bolometers; It is characterized in that described thermistor material is a kind of in the middle of vanadium oxide film or thin film of titanium oxide, amorphous silicon membrane, vanadium oxide composite membrane, titanium oxide composite film, the amorphous silicon composite membrane.
8. according to claim 1,4 and 5 arbitrary described double-deck micro-metering bolometers, it is characterized in that described heat delivered layer is metal A l or metal A u, Ti, TiN
x , TiSi
x , TiW
x , W, WSi
x , Ni, NiSi
x , Ta, TaN
x , in the middle of the Fe, Pt, Cu, Ag, NiCr alloy one or more.
9. the preparation method of double-deck micro-metering bolometer according to claim 1 is characterized in that, may further comprise the steps:
1) clean the monocrystalline silicon piece substrate contain integrated circuit, utilizing reactor to deposit a layer thickness is that the amorphous silica film of 100-2500nm is as passivation layer;
2), utilize reactor to deposit the metallic aluminium that a layer thickness is 50-1000nm, as the reflection horizon of microbridge on the surface of silicon dioxide passivation layer;
3) carve the pier pattern of microactuator suspension bridge in the surface light of above-mentioned metallic aluminium, this metal aluminium lamination of etching to following silicon dioxide passivation layer forms microbridge bridge pier hole and metallic aluminium isolated island;
4) on the surface of above-mentioned metallic aluminium isolated island, spin coating ground floor thickness is the photosensitive polyimide film of 1-10 μ m;
5) the ground floor Kapton is carried out photoetching treatment, form the bridge pier hole of Kapton isolated island and suspension microbridge;
6) on the surface in ground floor Kapton isolated island and bridge pier hole, utilize the ground floor amorphous silicon nitride film of bridge floor under the reactor deposition microbridge, thickness is 10-1500 nm, as the support and the insulating material of microbridge;
7) utilize reactor, on the surface of amorphous silicon nitride support membrane, preparation thickness is the thermistor thin film of the microbridge of 5-2000nm;
8) utilize reactor, on the surface of thermistor thin film, the ground floor metal of bridge floor under the deposition microbridge, thickness is 10-1000 nm, and is graphical, as the electrode of microbridge;
9) utilize reactor, on the surface of metal electrode and thermistor thin film, the second layer amorphous silicon nitride film of bridge floor under the deposition microbridge, thickness is 10-1500 nm, as the passivation layer of electrode and thermosensitive film and the regulation and control layer of stresses of parts;
10) on the surface of amorphous silicon nitride passivation layer, utilize the second layer metal of bridge floor under the reactor deposition microbridge, thickness is 10-1000 nm, and is graphical, as the control transfer of heat layer;
11) carve the structure graph of bridge floor under the microactuator suspension bridge in the surface light of above-mentioned laminated film, this THIN COMPOSITE rete to ground floor polyimide layer of etching forms following bridge floor, bridge leg and the pier pattern of suspension microbridge;
The surface of the heat delivered layer that 12) constitutes by metal at following bridge floor, the second layer thickness of spin coating microbridge is the photosensitive polyimide film of 1-10 μ m;
13) second layer Kapton is carried out photoetching treatment, form the Kapton isolated island and be connected two joint pin holes of bridge floor up and down;
14) in the surface of second layer Kapton isolated island and two joint pin holes that are connected bridge floor up and down, utilize the light absorbing material of reactor deposition microbridge;
15) carve the structure graph of bridge floor on the double-deck microbridge that suspends in the surface light of above-mentioned light absorption film, this thin layer of etching forms the last bridge floor figure of the double-deck microbridge that suspends to second layer polyimide layer;
16) adopt oxygen plasma to remove up and down the ground floor and the second layer Kapton of two bridge floors and bridge leg figure below, form independently about two cavitys, two bridge floors up and down, constitute double-deck micro-metering bolometer.
10. the preparation method of double-deck micro-metering bolometer according to claim 1 is characterized in that, may further comprise the steps:
1) clean the monocrystalline silicon piece substrate contain integrated circuit, utilizing reactor to deposit a layer thickness is that the amorphous silica film of 100-2500 nm is as passivation layer;
2), utilize reactor to deposit the metallic aluminium that a layer thickness is 50-1000 nm, as the reflection horizon of microbridge on the surface of silicon dioxide passivation layer;
3) carve the pier pattern of microactuator suspension bridge in the surface light of above-mentioned metallic aluminium, this metal aluminium lamination of etching to following silicon dioxide passivation layer forms microbridge bridge pier hole and metallic aluminium isolated island;
4) on the surface of above-mentioned metallic aluminium isolated island, spin coating ground floor thickness is the photosensitive polyimide film of 1-10 μ m;
5) the ground floor Kapton is carried out photoetching treatment, form the bridge pier hole of Kapton isolated island and suspension microbridge;
6) on the surface in ground floor Kapton isolated island and bridge pier hole, utilize the ground floor amorphous silicon nitride film of bridge floor under the reactor deposition microbridge, thickness is 10-1500 nm, as the support and the insulating material of microbridge;
7) utilize reactor, on the surface of amorphous silicon nitride support membrane, the ground floor metal of bridge floor under the deposition microbridge, thickness is 10-1000 nm, and is graphical, as the electrode of microbridge;
8) electrode is carried out after the backwash, utilizing reactor made thickness is the thermistor thin film of the microbridge of 5-2000 nm;
9) utilize reactor, on the surface of metal electrode and thermistor thin film, the second layer amorphous silicon nitride film of bridge floor under the deposition microbridge, thickness is 10-1500 nm, as the passivation layer of electrode and thermosensitive film and the regulation and control layer of stresses of parts;
10) on the surface of amorphous silicon nitride passivation layer, utilize the second layer metal of bridge floor under the reactor deposition microbridge, thickness is 10-1000 nm, and is graphical, as the control transfer of heat layer;
11) carve the structure graph of bridge floor under the microactuator suspension bridge in the surface light of above-mentioned laminated film, this THIN COMPOSITE rete to ground floor polyimide layer of etching forms following bridge floor, bridge leg and the pier pattern of suspension microbridge;
The surface of the heat delivered layer that 12) constitutes by metal at following bridge floor, the second layer thickness of spin coating microbridge is the photosensitive polyimide film of 1-10 μ m;
13) second layer Kapton is carried out photoetching treatment, form the Kapton isolated island and be connected two joint pin holes of bridge floor up and down;
14) in the surface of second layer Kapton isolated island and two joint pin holes that are connected bridge floor up and down, utilize the light absorbing material of reactor deposition microbridge;
15) carve the structure graph of bridge floor on the double-deck microbridge that suspends in the surface light of above-mentioned light absorption film, this thin layer of etching forms the last bridge floor figure of the double-deck microbridge that suspends to second layer polyimide layer;
16) adopt oxygen plasma to remove up and down the ground floor and the second layer Kapton of two bridge floors and bridge leg figure below, form independently about two cavitys, two bridge floors up and down, constitute double-deck micro-metering bolometer.
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| CN105712284A (en) * | 2014-12-02 | 2016-06-29 | 无锡华润上华半导体有限公司 | Fabrication method of MEMS (Micro Electro Mechanical Systems) double layer suspended micro structure and MEMS infrared detector |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6307194B1 (en) * | 1999-06-07 | 2001-10-23 | The Boeing Company | Pixel structure having a bolometer with spaced apart absorber and transducer layers and an associated fabrication method |
| CN101881667A (en) * | 2010-06-24 | 2010-11-10 | 电子科技大学 | Uncooled microbolometer and preparation method thereof |
-
2011
- 2011-09-29 CN CN 201110299176 patent/CN102393252B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6307194B1 (en) * | 1999-06-07 | 2001-10-23 | The Boeing Company | Pixel structure having a bolometer with spaced apart absorber and transducer layers and an associated fabrication method |
| CN101881667A (en) * | 2010-06-24 | 2010-11-10 | 电子科技大学 | Uncooled microbolometer and preparation method thereof |
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