CN106672891A - Double-layer uncooled infrared detector structure and preparation method thereof - Google Patents
Double-layer uncooled infrared detector structure and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 239000010410 layer Substances 0.000 claims abstract description 281
- 229910052751 metal Inorganic materials 0.000 claims abstract description 137
- 239000002184 metal Substances 0.000 claims abstract description 137
- 239000011241 protective layer Substances 0.000 claims abstract description 46
- 229910001935 vanadium oxide Inorganic materials 0.000 claims abstract description 25
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000010409 thin film Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims description 40
- 239000010408 film Substances 0.000 claims description 30
- 238000000151 deposition Methods 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 21
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 15
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 12
- 229910052720 vanadium Inorganic materials 0.000 claims description 12
- 238000001259 photo etching Methods 0.000 claims description 10
- 239000000523 sample Substances 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 8
- 238000005240 physical vapour deposition Methods 0.000 claims description 7
- 239000004642 Polyimide Substances 0.000 claims description 6
- 229910010037 TiAlN Inorganic materials 0.000 claims description 6
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims description 6
- 229910001120 nichrome Inorganic materials 0.000 claims description 6
- 229920001721 polyimide Polymers 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 238000010276 construction Methods 0.000 claims description 5
- 230000007704 transition Effects 0.000 claims description 4
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 8
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- 239000004065 semiconductor Substances 0.000 abstract description 5
- 238000002310 reflectometry Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 10
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- 238000010586 diagram Methods 0.000 description 8
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- 230000008859 change Effects 0.000 description 7
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- -1 6-1 Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000007405 data analysis Methods 0.000 description 1
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- 235000013399 edible fruits Nutrition 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000005616 pyroelectricity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
- B81C1/00468—Releasing structures
- B81C1/00476—Releasing structures removing a sacrificial layer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
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- General Health & Medical Sciences (AREA)
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- Manufacturing & Machinery (AREA)
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Abstract
The invention relates to a double-layer uncooled infrared detector structure and a preparation method thereof. The detector includes a semiconductor base and a detector body, the semiconductor base includes a readout circuit, and the detector body is provided with a microbridge supporting structure; the readout circuit of the semiconductor base is electrically connected with the detector body; the detector body comprises an insulating medium layer, a metal reflective layer, a first supporting layer, a metal electrode layer, a first protective layer, a second supporting layer, an electrode metal layer, a thermosensitive layer and a second protective layer; the thermosensitive layer is arranged on the electrode metal layer, can not cover the electrode metal layer completely, and is electrically connected with the metal electrode layer through the electrode metal layer. In the preparation process, the electrode metal layer is firstly prepared, a thermosensitive vanadium oxide thin film is then deposited, the electrode metal layer is covered with a layer of the thermosensitive vanadium oxide thin film, the infrared radiation reflectivity of the detector is largely reduced, and the infrared absorption efficiency of the detector is improved.
Description
Technical field
The invention belongs to the MEMS technique manufacture field in semiconductor technology, and in particular to a kind of uncooled ir
Focus planardetector preparation method.
Background technology
Uncooled infrared detection technology is perceived and turned without the need for the infra-red radiation (IR) of refrigeration system object to external world
The chemical conversion signal of telecommunication, in the technology of display terminal output, can be widely applied to national defence, space flight, medical science, production monitoring etc. Jing after processing
Various fields.Non-refrigerated infrared focal plane probe can be worked due to it under room temperature state, and with light weight, volume
Little, life-span length, low cost, power are little, startup is fast and the advantages of good stability, meet civilian infrared system and part is military red
External system is to Long Wave Infrared Probe in the urgent need to developing in recent years swift and violent.Non-refrigerated infrared detector mainly includes surveying
Bolometer, pyroelectricity and thermopile detector etc., wherein the microbolometer heat based on MEMS (MEMS) manufacturing process
Meter (Micro-bolometer) Infrared Detectorss are high due to its speed of response, processing technology it is simple and with IC manufacturing work
Skill is compatible, with relatively low cross-talk and relatively low 1/f noise, higher frame speed, works without the need for chopper, is easy to large-scale production
The advantages of, it is one of mainstream technology of non-refrigerated infrared detector.
Micro-metering bolometer (Micro-bolometer) is to be based on the material with sensitive characteristic when temperature changes
A kind of non-refrigerated infrared detector that resistance value occurs corresponding change and manufactures.Heat during work to being supported on heat insulating construction
Quick resistance two ends apply fixed bias voltage or current source, and the temperature change that incident IR radiation causes is so that critesistor resistance
Value reduces, so that electric current, voltage change, and reads the change of the signal of telecommunication by reading circuit (ROIC).As temperature-sensitive electricity
The material of resistance must have higher temperature-coefficient of electrical resistance (TCR), relatively low 1/f noise, appropriate resistance value and stable electricity
Performance, and easily prepared etc. require.At present the thermo-sensitive material of main flow includes vanadium oxide (VOx), non-crystalline silicon and high-temperature superconductor
Material (YBCO) etc..
The unit of non-refrigerate infrared focal plane array seeker generally adopts cantilever beam micro-bridge structure, is discharged using sacrifice layer
Technique forms microbridge supporting construction, and the thermo-sensitive material in support platform is connected by microbridge with substrate reading circuit.Now to visiting
The resolution requirement more and more higher of device is surveyed, array request is increasing, such as the size constancy of fruit chip, then pixel is less and less,
Can more and more higher to the flatness requirement of pixel；Both sides micro-bridge structure needs two-layer sacrifice layer, the energy that two-layer sacrifice layer absorbs
It is more.
With the progressively diminution of pixel dimension, the infrared energy incided in infrared image element is contracted in the way of square law
It is little.When pixel dimension is when 25 microns drop to 17 microns, projectile energy reduces by one times；When pixel is reduced to 12 microns, enter
Energy is only 25 microns 25% is penetrated, single layer process cannot meet performances of IR requirement.
Thermosensitive film can not bear high-temperature technology, if thermosensitive film is placed on before metal electrode time, cannot be compatible
Standard IC (intergarted circuit:Integrated circuit) technique and PVD (physical vapour deposition (PVD)) technique.
Metal electrode is deposited on after thermosensitive film vanadium oxide, contact hole (Contact) place metal electrode meeting on vanadium oxide
Reflection is infrared, can reduce detector INFRARED ABSORPTION efficiency, if first deposit metal electrodes, redeposited thermosensitive film vanadium oxide, gold
One layer of thermosensitive film vanadium oxide is covered with category electrode so as to the reflectance of infra-red radiation is substantially reduced, detection is improve
The infrared radiation absorption efficiency of device.
Vanadium oxide thermosensitive film and integrated circuit fabrication process it is compatible bad, vanadium oxide material and vanadium material are worried by factory
Material contamination equipment, need, to the equipment after vanadium oxide technique, to be separately configured and isolated, prevent stain other products and
Process equipment.
With the progressively diminution of pixel dimension, the infrared energy incided in infrared image element is contracted in the way of square law
It is little.When pixel dimension is when 25 microns drop to 17 microns, projectile energy reduces by one times；When pixel is reduced to 12 microns, enter
Penetrate energy is only 25 microns 25%.
The content of the invention
The present invention is directed to the deficiencies in the prior art, there is provided a kind of double-deck non-refrigerated infrared detector structure and its system
Preparation Method, first deposit metal electrodes, redeposited temperature-sensitive layer film, it is possible to increase INFRARED ABSORPTION efficiency.
A kind of technical scheme of double-deck non-refrigerated infrared detector is as follows in the present invention：A kind of double-deck Uncooled infrared detection
Device structure, including a quasiconductor pedestal comprising reading circuit and a detector with microbridge supporting construction, it is described semiconductor-based
The reading circuit of seat is electrically connected with the detector, and the detector includes that insulating medium layer, metallic reflector, first support
Layer, metal electrode layer, the quasiconductor pedestal is provided with metallic reflector and insulating medium layer, if the metallic reflector includes
Dry metal derby；
The metal derby is provided with the first supporting layer, and first supporting layer is provided with first through hole, the first through hole
The metallic reflector is terminated at, on first supporting layer and metal electrode layer, the metal electrode is provided with first through hole
Layer includes the metal electrode being arranged on first supporting layer and the metal connecting line being arranged in the first through hole；
The metal electrode layer is provided with the first protective layer, and first protective layer is provided with the second supporting layer, and described
Two supporting layers are provided with the second through hole, and second through hole terminates at the metal electrode, with second on second supporting layer
Electrode metal layer is provided with through hole；
The electrode metal layer is provided with heat-sensitive layer, and the heat-sensitive layer can not be completely covered electrode metal layer, the temperature-sensitive
Layer is electrically connected by the electrode metal layer with the metal electrode layer；
The second protective layer is provided with the heat-sensitive layer with electrode metal layer.
A kind of beneficial effect of double-deck non-refrigerated infrared detector structure is in the present invention：Double-decker improves pixel structure
Effective fill factor, curve factor and INFRARED ABSORPTION efficiency；The graphical treatment of electrode metal layer is first completed, is made on electrode metal layer
With the contact hole of thermosensitive film, the size of contact hole can be expanded to pixel edge, increased the activity coefficient of pixel, reduce work
Contact resistance between skill difficulty and reduction thermosensitive film and electrode, is that the research and development and production of less pixel dimension lay the first stone；
In addition, first depositing electrode metal level, redeposited thermosensitive film vanadium oxide is covered with one layer of thermosensitive film oxygen on electrode metal layer
Change vanadium so as to the reflectance of infra-red radiation is substantially reduced, the INFRARED ABSORPTION efficiency of detector is improve.
Further, first supporting layer and the second supporting layer are silicon nitride, first protective layer and the second protective layer
For silicon nitride, the heat-sensitive layer is vanadium oxide film, and the metal electrode is V, Ti, NiCr, TiAlN thin film.
The invention further relates to the preparation method of above-mentioned double-deck non-refrigerated infrared detector structure, comprises the following steps：
Step 1：Metallic reflector is made on reading circuit quasiconductor pedestal is included, and figure is carried out to metallic reflector
Change is processed, it is graphical after metallic reflector form several metal derbies；The metal derby is electric with the reading on quasiconductor pedestal
Road electrically connects；Then, insulating medium layer is deposited on patterned metal reflecting layer is completed, and insulating medium layer is patterned
Process, and expose metal derby；
Step 2：The first sacrifice layer is deposited on described insulating medium layer, and place is patterned to the first sacrifice layer
Reason, deposits the first supporting layer on the first sacrifice layer after graphical treatment, first supporting layer is silicon nitride film, described
First sacrifice layer is polyimides；
Step 3：Using photoetching and the method for etching, etch away the supporting layer of part first, the first supporting layer etch-stop in
The metal derby, forms first through hole, deposit metal electrodes layer in the first through hole and on first supporting layer, and right
Metal electrode layer is patterned process, forms metal electrode and metal connecting line；
Step 4：The first protective layer is deposited on metal electrode layer after graphically；
Step 5：Using photoetching and the method for etching, part first protective layer and the first supporting layer are etched away, etched
Terminate at first sacrifice layer, the sacrifice layer of exposed portion first；
Step 6：The first protective layer after the etching and depositing second sacrificial layer on the first sacrifice layer for exposing, and to second
Sacrifice layer is patterned process, and the second supporting layer is deposited on the second sacrifice layer after graphical treatment, and described second supports
Layer is silicon nitride film, and second sacrifice layer is polyimides；
Step 7：Using photoetching and the method for etching, the supporting layer of part second and the first protective layer are etched away, form second
Then through hole, the second through hole etch-stop, deposits in the metal electrode in second supporting layer and the second through hole
Electrode metal layer, and process is patterned to electrode metal layer, partial electrode metal is etched away, exposed portion second supports
Layer；
Step 8:Heat-sensitive layer, and self-assembling formation are deposited on electrode metal layer after graphically and the second supporting layer for exposing
Contact hole, the hole that the contact hole is formed when being and covering graphical rear electrode metal on heat-sensitive layer；
Step 9：The second protective layer is deposited on heat-sensitive layer, and process is patterned to the second protective layer, then, carried out
Structure release, removes sacrifice layer and forms micro-bridge structure.
The beneficial effect of the preparation method of above-mentioned non-refrigerated infrared focal plane probe structure in the present invention：
(1) depositing two-layer sacrifice layer can improve effective fill factor, curve factor and INFRARED ABSORPTION efficiency of pixel structure；
(2) electrode metal layer is first completed graphical, graphically can the determining of electrode metal layer is formed on follow-up heat-sensitive layer
The size of contact hole, and contact hole self-assembling formation, it is not necessary to individually photoetching and etch process, technique is simpler, and can be with
Expand the size of contact hole to pixel edge, increased the activity coefficient of pixel, reduce technology difficulty and reduce thermosensitive film and
Contact resistance between electrode metal layer, is that the research and development and production of less pixel dimension lay the first stone；
In addition, first depositing electrode metal level, redeposited thermosensitive film vanadium oxide is covered with one layer of heat on electrode metal layer
Sensitive film vanadium oxide so as to substantially reduce to the reflectance of infra-red radiation, improves the INFRARED ABSORPTION efficiency of detector；
(3) vanadium is heavy metal, and the meeting of deposited oxide vanadium thin film causes follow-up equipment to stain, and affects follow-up processing；The work
In skill after the deposition of vanadium oxide film, pollution of the heavy metal to equipment can be reduced, improve the compatibility with IC manufacturing,
Equipment investment is reduced, the facilities and administration production technology of factory is made full use of, there is provided the yield and reduces cost of product, and more preferably
The probability to other products pollution is taken precautions against on ground, carries out risk management prevention.
Further, the thickness of metallic reflector isMetallic reflector is the infrared of 8~14um to wavelength
The reflectance of light is more than 99%.
Further, described insulating medium layer is silicon nitride film or silicon oxide film, and thickness is
Further, the thickness of first sacrifice layer and the second sacrifice layer is 1.0~2.5um.
Further, the thickness of first supporting layer is
Further, the metal electrode layer is V, Ti, NiCr, TiAlN thin film, and the thickness of the metal electrode layer is
Further, described heat-sensitive layer thickness isHeat-sensitive layer sheet resistance be 50~5000K Ω, the heat
Photosensitive layer adopts vanadium oxide, and the vanadium oxide heat-sensitive layer is heavy using electron beam evaporation, laser evaporation, ion beam depositing or physical vapor
Product method deposition, during deposition, first depositing a layer thickness isTransition zone, the transition zone adopts V/V2O5/ V is thin
Film.
It is using the beneficial effect of above-mentioned further technical scheme：When heat-sensitive layer is deposited, i.e. deposited oxide vanadium thin film
When, first deposit one layer of very thin V/V2O5/ V thin film, in deposition thermosensitive film vanadium oxide, through follow-up high-temperature technology or
Annealing process V/V2O5/ V thin film forms vanadium oxide film, can reduce device noise.
Further, first protective layer and the second protective layer are formed using chemical vapor deposition low stress SiNx
's.
Description of the drawings
Fig. 1 is that metallic reflector of the present invention and insulating medium layer form schematic diagram；
Fig. 2 is that the first sacrifice layer of the invention and the first supporting layer form schematic diagram；
Fig. 3 is that metal electrode of the present invention and the first protective layer form schematic diagram；
Fig. 4 is the first protective layer of the invention and the graphical schematic diagram of the first supporting layer；
Fig. 5 is that the second sacrifice layer of the invention and the second supporting layer form schematic diagram；
Fig. 6 is that electrode metal layer of the present invention forms schematic diagram；
Fig. 7 is that heat-sensitive layer of the present invention and the second protective layer form schematic diagram；
Fig. 8 is panel detector structure schematic diagram of the present invention；
In the accompanying drawings, the list of designations represented by each label is as follows：1st, quasiconductor pedestal, 2, metallic reflector, 2-
1st, metal derby, 3, insulating medium layer, the 4, first sacrifice layer, the 5, first supporting layer, 6, metal electrode layer, 6-1, metal electrode, 6-
2nd, metal connecting line, the 7, first protective layer, 8, first through hole, the 9, second sacrifice layer, the 10, second supporting layer, 11, electrode metal layer,
12nd, the second through hole, 13, heat-sensitive layer, the 14, second protective layer.
Specific embodiment
The principle and feature of a kind of double-deck non-refrigerated infrared detector structure in the present invention are retouched below in conjunction with accompanying drawing
State, example is served only for explaining the present invention, is not intended to limit the scope of the present invention.
The present invention proposes a kind of double-deck non-refrigerated infrared detector structure, as shown in figure 8, including reading circuit including one
Detector of the quasiconductor pedestal 1 and with microbridge supporting construction, reading circuit and the detector of the quasiconductor pedestal 1
Electrical connection, the detector includes insulating medium layer 3, metallic reflector 2, the first supporting layer 5, metal electrode layer 6, described partly to lead
Susceptor body 1 is provided with metallic reflector 2 and insulating medium layer 3, and the metallic reflector 2 includes several metal derbies 2-1；
The metal derby 2-1 is provided with the first supporting layer 5, and first supporting layer 5 is provided with first through hole 8, and described
One through hole 8 terminates at the metal derby 2-1, and on first supporting layer 5 and in first through hole 8 metal electrode layer 6 is provided with, described
Metal electrode layer 6 includes the metal electrode 6-1 being arranged on first supporting layer 5 and is arranged in the first through hole 8
Metal connecting line 6-2；
The metal electrode layer 6 is provided with the first protective layer 7, and first protective layer 7 is provided with the second supporting layer 10, institute
State the second supporting layer 10 and be provided with the second through hole 12, second through hole 12 terminates at the metal electrode 6-1, described second
Electrode metal layer 11 is provided with support layer 10 and in the second through hole 12；
The electrode metal layer 11 is provided with heat-sensitive layer 13, and the heat-sensitive layer 13 can not be completely covered electrode metal layer 11,
The heat-sensitive layer 13 is electrically connected by the electrode metal layer 11 with the metal electrode layer 6；
The second protective layer 14 is provided with the heat-sensitive layer 13 with electrode metal layer 11.
The supporting layer 10 of first supporting layer 5 and second is silicon nitride, and the protective layer 14 of first protective layer 7 and second is
Silicon nitride, the heat-sensitive layer 13 be vanadium oxide film, the metal electrode layer 6 be V, Ti, NiCr, TiAlN thin film.
A kind of operation principle of double-deck non-refrigerated infrared detector structure is as follows in the present invention：
When temperature changes, there is corresponding change in the resistance of the thin film of heat-sensitive layer 13, by electrode metal 11, metal
Electrode layer 6 and metallic reflector 2 pass the signal along to the reading circuit on quasiconductor pedestal 1, and reading circuit read output signal passes through
Data analysiss are imaged.
The invention further relates to the preparation method of above-mentioned double-deck non-refrigerated infrared detector structure, below in conjunction with accompanying drawing to the party
Method is described.
A kind of preparation method of double-deck non-refrigerated infrared detector structure, comprises the following steps：
Step 1：Metallic reflector 2 is made on reading circuit quasiconductor pedestal 1 is included, and metallic reflector 2 is carried out
Graphical treatment, it is graphical after metallic reflector 2 form several metal derbies 2-1；The metal derby 2-1 and quasiconductor pedestal
Reading circuit electrical connection on 1；Then, insulating medium layer 3 is deposited on patterned metal reflecting layer 2 is completed, and insulation is situated between
Matter layer 3 is patterned process, and exposes metal derby 2-1, and the thickness of metallic reflector 2 isMetallic reflection
The 2 pairs of wavelength of layer be the reflectance of the infrared light of 8~14um more than 99%, described insulating medium layer 3 be silicon nitride film or
Person's silicon oxide film, thickness is
Step 2：The first sacrifice layer 4 is deposited on described insulating medium layer 3, and the first sacrifice layer 4 is patterned
Process, the first supporting layer 5 is deposited on the first sacrifice layer 4 after graphical treatment, first supporting layer 5 is that silicon nitride is thin
Film, first sacrifice layer 4 is polyimides, and the thickness of first sacrifice layer 4 is 1.0~2.5um, first supporting layer
5 thickness is
Step 3：Using photoetching and the method for etching, the first supporting layer of part 5, the etch-stop of the first supporting layer 5 are etched away
In the metal derby 2-1, first through hole 8 is formed, deposited metal electricity in the first through hole 8 and on first supporting layer 5
Pole layer 6, and process is patterned to metal electrode layer 6, form metal electrode 6-1 and metal connecting line 6-2, the metal electrode
Layer 6 is V, Ti, NiCr, TiAlN thin film, and the thickness of the metal electrode layer 6 is
Step 4：The first protective layer 7 is deposited on metal electrode layer 6 after graphically.
Step 5：Using photoetching and the method for etching, the part supporting layer 5 of the first protective layer 7 and first is etched away, lost
Terminate at first sacrifice layer 4, the first sacrifice layer of exposed portion 4 quarter.
Step 6：The first protective layer 7 after the etching and depositing second sacrificial layer 9 on the first sacrifice layer 4 for exposing, and it is right
Second sacrifice layer 9 is patterned process, and the second supporting layer 10 is deposited on the second sacrifice layer 9 after graphical treatment, described
Second supporting layer 10 is silicon nitride film, and second sacrifice layer 9 is polyimides, the thickness of the second sacrifice layer 9 is 1.0~
2.5um。
Step 7：Using photoetching and the method for etching, part the second supporting layer 10 and the first protective layer 7 are etched away, form the
Two through holes 12, the etch-stop of the second through hole 12 in the metal electrode 6-1, then, in second supporting layer 10 and
Depositing electrode metal level 11 in two through holes 12, and process is patterned to electrode metal layer 11, partial electrode metal is etched away,
The second supporting layer of exposed portion 10.
Step 8:Electrode metal layer 11 after graphical and deposition heat-sensitive layer 13 on the second supporting layer 10 for exposing, it is described
The thickness of heat-sensitive layer 13 beThe sheet resistance of heat-sensitive layer 13 is 50~5000K Ω, and the heat-sensitive layer 13 is using oxidation
Vanadium, and self-assembling formation contact hole (not marking in figure), the contact hole is to cover graphical rear electrode metal 11 on heat-sensitive layer 13
When the hole that formed, the vanadium oxide heat-sensitive layer 13 adopts electron beam evaporation, laser evaporation, ion beam depositing or physical vapour deposition (PVD)
Method deposition, during deposition, first deposit a layer thickness beTransition zone, the transition zone adopts V/V2O5/ V is thin
Film.
Step 9：The second protective layer 14 is deposited on heat-sensitive layer 13, and process is patterned to the second protective layer 14, so
Afterwards, structure release is carried out, removes sacrifice layer and form micro-bridge structure, the protective layer 14 of first protective layer 7 and second is all to utilize
What chemical vapor deposition low stress SiNx was formed.
The foregoing is only presently preferred embodiments of the present invention, not to limit the present invention, all spirit in the present invention and
Within principle, any modification, equivalent substitution and improvements made etc. should be included within the scope of the present invention.
Claims (10)
1. a kind of double-deck non-refrigerated infrared detector structure, it is characterised in that including a quasiconductor pedestal comprising reading circuit
With a detector with microbridge supporting construction, the reading circuit of the quasiconductor pedestal electrically connects with the detector, the spy
Surveying device includes insulating medium layer, metallic reflector, the first supporting layer, metal electrode layer, and the quasiconductor pedestal is provided with metal
Reflecting layer and insulating medium layer, the metallic reflector includes several metal derbies；
The metal derby is provided with the first supporting layer, and first supporting layer is provided with first through hole, and the first through hole terminates
Metal electrode layer is provided with the metal derby, first supporting layer and in first through hole, the metal electrode layer includes setting
Put the metal electrode on first supporting layer and the metal connecting line being arranged in the first through hole；
The metal electrode layer is provided with the first protective layer, and first protective layer is provided with the second supporting layer, described second
Support layer is provided with the second through hole, and second through hole terminates at the metal electrode, with the second through hole on second supporting layer
Inside it is provided with electrode metal layer；
The electrode metal layer is provided with heat-sensitive layer, and the heat-sensitive layer can not be completely covered electrode metal layer, and the heat-sensitive layer leads to
Cross the electrode metal layer to electrically connect with the metal electrode layer；
The second protective layer is provided with the heat-sensitive layer with electrode metal layer.
2. a kind of double-deck non-refrigerated infrared detector structure according to claim 1, it is characterised in that described first supports
Layer and the second supporting layer are silicon nitride, and first protective layer and the second protective layer are silicon nitride, and the heat-sensitive layer is vanadium oxide
Thin film, the metal electrode be V, Ti, NiCr, TiAlN thin film.
3. the preparation method of a kind of double-deck non-refrigerated infrared detector structure described in claim 1 or 2, it is characterised in that bag
Include following steps：
Step 1：Metallic reflector is made on reading circuit quasiconductor pedestal is included, and place is patterned to metallic reflector
Reason, it is graphical after metallic reflector form several metal derbies；The metal derby is electric with the reading circuit on quasiconductor pedestal
Connection；Then, insulating medium layer is deposited on patterned metal reflecting layer is completed, and place is patterned to insulating medium layer
Reason, and expose metal derby；
Step 2：The first sacrifice layer is deposited on described insulating medium layer, and process is patterned to the first sacrifice layer,
Deposit the first supporting layer on the first sacrifice layer after graphical treatment, first supporting layer is silicon nitride film, described first
Sacrifice layer is polyimides；
Step 3：Using photoetching and the method for etching, the supporting layer of part first is etched away, the first supporting layer etch-stop is in described
Metal derby, forms first through hole, deposit metal electrodes layer in the first through hole and on first supporting layer, and to metal
Electrode layer is patterned process, forms metal electrode and metal connecting line；
Step 4：The first protective layer is deposited on metal electrode layer after graphically；
Step 5：Using photoetching and the method for etching, part first protective layer and the first supporting layer, etch-stop are etched away
In first sacrifice layer, the sacrifice layer of exposed portion first；
Step 6：The first protective layer after the etching and depositing second sacrificial layer on the first sacrifice layer for exposing, and sacrifice to second
Layer is patterned process, and the second supporting layer is deposited on the second sacrifice layer after graphical treatment, and second supporting layer is
Silicon nitride film, second sacrifice layer is polyimides；
Step 7：Using photoetching and the method for etching, the supporting layer of part second and the first protective layer are etched away, form the second through hole,
The second through hole etch-stop is in the metal electrode, then, the depositing electrode in second supporting layer and the second through hole
Metal level, and process is patterned to electrode metal layer, etch away partial electrode metal, the supporting layer of exposed portion second；
Step 8:Heat-sensitive layer is deposited on electrode metal layer after graphically and the second supporting layer for exposing；
Step 9：The second protective layer is deposited on heat-sensitive layer, and process is patterned to the second protective layer, then, carry out structure
Release, removes sacrifice layer and forms micro-bridge structure.
4. the preparation method of non-refrigerated infrared focal plane probe structure according to claim 3, it is characterised in that metal
The thickness in reflecting layer isMetallic reflector be to wavelength the infrared light of 8~14um reflectance 99% with
On.
5. the preparation method of non-refrigerated infrared focal plane probe structure according to claim 3, it is characterised in that described
Insulating medium layer be silicon nitride film or silicon oxide film, thickness is
6. the preparation method of non-refrigerated infrared focal plane probe structure according to claim 3, it is characterised in that described
The thickness of the first sacrifice layer and the second sacrifice layer is 1.0~2.5um.
7. the preparation method of non-refrigerated infrared focal plane probe structure according to claim 3, it is characterised in that described
Metal electrode layer is V, Ti, NiCr, TiAlN thin film, and the thickness of the metal electrode layer is
8. the preparation method of non-refrigerated infrared focal plane probe structure according to claim 3, it is characterised in that described
The thickness of the first supporting layer is
9. the preparation method of non-refrigerated infrared focal plane probe structure according to claim 3, it is characterised in that described
The thickness of heat-sensitive layer beHeat-sensitive layer sheet resistance is 50~5000K Ω, and the heat-sensitive layer adopts vanadium oxide, institute
State vanadium oxide heat-sensitive layer to deposit using the method for electron beam evaporation, laser evaporation, ion beam depositing or physical vapour deposition (PVD), deposition
When, first depositing a layer thickness is Transition zone, the transition zone adopts V/V2O5/ V thin film.
10. the preparation method of non-refrigerated infrared focal plane probe structure according to claim 3, it is characterised in that institute
Stating the first protective layer and the second protective layer is formed using chemical vapor deposition low stress SiNx.
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