CN109813446A - A kind of composite absorption film layer non-refrigerating infrared focal plane and production method - Google Patents
A kind of composite absorption film layer non-refrigerating infrared focal plane and production method Download PDFInfo
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Abstract
A kind of composite absorption film layer non-refrigerating infrared focal plane and production method are related to infrared acquisition and technical field of imaging, solve existing non-refrigeration focal surface for realize high-absorbility and increase absorber thickness, reduced performance caused by equivalent thermal capacitance increases the problems such as.The focal plane includes the array of multiple pixel compositions, and each pixel successively includes: that reading circuit is the silicon substrate or germanium base CMOS integrated circuit for having amplification and reducing noise function from the bottom to top, and read-out electrode pair is arranged in CMOS integrated circuit；Heat-insulated microbridge includes microbridge face, two micro- support constructions and two micro-cantilevers；Thermal resistor layer is that the absolute value of temperature resistance coefficient is higher than 2% material；Read-out electrode is connect by through-hole with thermal resistor layer；Passivation insulation protects thermal resistor layer；Composite absorption film layer includes metal layer, dielectric layer and metal microarray, and related production method of the invention is compatible with traditional non-refrigerated infrared detector processing technology, simple process, is conducive to large-scale low-cost preparation.
Description
Technical field
The present invention relates to infrared acquisition and technical field of imaging more particularly to a kind of composite absorption film layer uncooled ir are burnt
Plane and production method.
Background technique
Under the demand and promotion of Military Application, as the core component of infrared imaging system, infrared detector was in the past
Tens of years be developed rapidly, not only militarily realize thermal imaging, detection guidance etc., in industry, traffic, peace
The numerous areas such as anti-monitoring, meteorology, environment, medicine also have a wide range of applications.
Infrared detector mainly divides refrigeration mode and non-refrigeration type infrared detector.Non-refrigerated infrared detector is to pass through temperature-sensitive
Absorbed layer temperature change caused by tested infrared radiation signal is transformed into electric signal, and then obtains the red of target by resistance material
External information.Although it can work at room temperature compared with refrigeration type infrared detector there are gap in terms of response time, sensitivity
Make, be not required to complicated huge, expensive refrigeration mechanism, thus in quality, volume, service life, cost, power consumption, starting speed and stabilization
Property etc. have exclusive outstanding advantage, make it in military individual equipment, unmanned plane and civilian fire-fighting and security protection etc.
Numerous areas all has sizable application demand, and market is very urgent to high performance non-refrigerated infrared detector demand
It cuts.
Non-refrigerated infrared detector mainly faces infrared radiation absorption rate problem at present.The design of infrared layer and integrated production
It is a key technology of non-refrigerated infrared detector, it determines detector to the utilization rate of infra-red radiation, the height of absorbed layer
Absorptivity is the basic guarantee of non-refrigerated infrared detector performance.Improving the method that absorptivity generallys use at present includes: design
Cavity resonator structure, increase effect light path is to reach the total absorptivity for improving infra-red radiation；Improve absorber thickness.Above method
In the former craft precision is required high, the heterogencity of structure will be brought when preparing large area array focal plane, so as to cause detection at
Noise increases when picture；And the latter improves the equivalent thermal capacitance of focal plane, the increase effect of absorptivity, which is substantially offset, even to be reduced
Detector performance.Furthermore in far infrared band, small absorbing material selectable range is also an insoluble problem.
Summary of the invention
In order to solve the problems in the existing technology, it is burnt that the present invention provides a kind of composite absorption film layer uncooled irs
Plane and production method, it is intended to break through traditional far-infrared material resonant cavity structure limitation, solving existing non-refrigeration focal surface is
The problems such as realizing high-absorbility and increasing reduced performance caused by absorber thickness, the increase of equivalent thermal capacitance.
The technical proposal for solving the technical problem of the invention is as follows:
A kind of composite absorption film layer non-refrigerating infrared focal plane, the focal plane are made of pixel array, and each pixel is under
It is supreme successively to include:
Reading circuit, the reading circuit are the silicon substrate or the integrated electricity of germanium base CMOS for having amplification and reducing noise function
Road, in CMOS production of integrated circuits electrode pair corresponding with pixel array position；
Heat-insulated microbridge, the heat-insulated microbridge include microbridge face, two micro- support constructions and two micro-cantilevers；It is described micro- outstanding
Arm beam one end connects microbridge face, and the other end connects micro- support construction, is equipped with contact hole, each contact inside micro- support construction
Hole is arranged on one of the electrodes, and the heat-insulated microbridge surface and inside are equipped with metal electrode；
Thermal resistor layer, the thermal resistor layer are that the absolute value of temperature resistance coefficient is higher than 2% material；The electrode
Metal electrode by being located at the contact hole, micro-cantilever and microbridge face is connect with thermal resistor layer；
Passivation insulation, the passivation insulation protects thermal resistor layer, and thermistor and absorbing membranous layer are insulated；
Composite absorption film layer, the composite absorption film layer include metal layer, dielectric layer and metal microarray, dielectric layer
For infrared band low-loss material；The composite absorption film layer is insulated by the passivation insulation and the thermal resistor layer,
The metal microarray is periodical sub-wavelength structure, and each metal unit is square or identical on the metal microarray
The cross sub-wavelength structure of structure is composed shape.
A kind of production method of composite absorption film layer non-refrigerating infrared focal plane, this method comprises the following steps:
Step 1: substrate of the cleaning containing CMOS integrated circuit, preparation 50~1000nm silica is as insulating layer and puts down
Smooth layer makes CMOS electrode pattern on the insulating layer and flatness layer, and etching oxidation silicon exposes the electrode pair, completes to read
Circuit flatness step；
Step 2: thickness 1000- is made using polyimides or porous silicon on the reading circuit described in step 1
The sacrificial layer of 5000nm makes contact hole on the sacrificial layer, exposes electrode pair；
Step 3: preparation is on the sacrificial layer described in step 2 with a thickness of 200-800nm silicon nitride film, in the nitridation
Heat-insulated microbridge figure is made on silicon thin film, forms heat-insulated microbridge；
Step 4: evaporation thickness is the metal electrode figure of 150-300nm on the heat-insulated microbridge described in step 3, is removed more
Remaining other parts metal；Evaporation thickness 100-800nm metal material makes contact hole graph, removes extra other parts
Metal, formed connection electrode to and thermal resistor layer metal electrode；
Step 5: the temperature-sensitive surface resistance with a thickness of 50-200nm is made on the microbridge face of the heat-insulated microbridge described in step 4
Layer；
Step 6: production is on the temperature-sensitive surface resistance layer described in step 5 with a thickness of 20-200nm passivation insulation；
Step 7: 30-200nm metal layer and 50-300nm medium are prepared in the passivation insulation described in step 6 respectively
Layer；
Step 8: evaporation metal 30-200nm on the dielectric layer described in step 7 is prepared using electron beam exposure mode
Sub-wavelength structure removes extra metal, forms metal microarray；
Step 9: removal sacrificial layer forms non-refrigerating infrared focal plane, it is red to complete a kind of composite absorption film layer non-brake method
The production method of outer focal plane.
The beneficial effects of the present invention are: a kind of composite absorption film layer non-refrigerating infrared focal plane of the present invention and production
Method provides one kind based on composite absorption film layer to replace original absorbed layer, to realize non-refrigerating infrared focal plane performance
Promotion.
50~300nm can achieve using composite absorption thicknesses of layers, any cavity resonator structure is not utilized to realize to target
The nearly perfect absorption of wavelength (absorptivity is up to 95% or more).The limitation that conventional absorbent material can be broken through using the above method, is taken
The infrared absorption layer of generation traditional non-refrigerated infrared detector and form resonant cavity and prepare reflecting layer, to reduce infrared acquisition
The noise of device, and focal plane thickness, the equivalent thermal capacitance to reduce entire device can be greatly lowered.According to formulaWherein G is equivalent thermal conductivity, is mainly determined by micro-cantilever, and C is equivalent thermal capacitance.Therefore equivalent
The reduction of thermal capacitance, may be implemented the reduction of noise equivalent temperature difference, to improve detector performance.
Related production method of the invention is compatible with traditional non-refrigerated infrared detector processing technology, does not increase technique
Complexity is conducive to large-scale low-cost preparation.
Detailed description of the invention
Fig. 1 composite absorption film layer non-refrigerating infrared focal plane cellular construction schematic diagram of the present invention
Fig. 2 composite absorption film layer non-refrigerating infrared focal plane cellular construction sectional view of the present invention.
Fig. 3 composite absorption film layer sectional view of the present invention.
Fig. 4 is one metal microarray structure schematic diagram of the embodiment of the present invention.
Fig. 5 is two metal micro array structure schematic diagram of the embodiment of the present invention.
In figure: 1, reading circuit, 2, heat-insulated microbridge, 2-1, microbridge face, 2-2, micro- support construction, 2-3, micro-cantilever, 2-
4, contact hole, 3, thermal resistor layer, 4, passivation insulation, 5, composite absorption film layer, 5-1, metal layer, 5-2, dielectric layer, 5-2-
1, first medium layer, 5-2-2, second dielectric layer, 5-3, metal microarray, 5-3-1, square structure, 5-3-2, cross knot
Structure.
Specific embodiment
The present invention provides a kind of composite absorption film layer non-refrigerating infrared focal planes, it is intended to break through traditional far-infrared material and
Cavity resonator structure limitation solves existing non-refrigeration focal surface to realize high-absorbility and increases absorber thickness, the increasing of equivalent thermal capacitance
The problems such as reduced performance caused by big.Specific structure as shown in Figure 1, include reading circuit 1, heat-insulated microbridge 2, thermal resistor layer 3,
Passivation insulation 4, composite absorption film layer 5.
The reading circuit 1 is silicon substrate or germanium base CMOS integrated circuit, has circuit amplification and reduces noise function,
Each reading circuit 1 has an electrode pair, two read-out electrodes；In the diagonal upper setting of the CMOS integrated circuit.
The heat-insulated microbridge 2 is as shown in Fig. 2, specifically include microbridge face 2-1, micro- support construction 2-2 and micro-cantilever 2-3；
The one end micro-cantilever 2-3 connects microbridge face 2-1, and the other end connects micro- support construction 2-2, setting contact in micro- support construction 2-2
Hole 2-4 need to make the electrode in thermal resistor layer 3 and reading circuit 1 to interconnection, so micro- support construction by contact hole 2-4
2-2 is arranged on the read-out electrode, the microbridge face 2-1 and two micro-cantilever 2-3 and the non-contact company of the reading circuit 1
It connects, vacantly on reading circuit 1；The position that two micro-cantilever 2-3 are connect with microbridge face 2-1 is located at the microbridge face 2-1's
Diagonal angle is used to support microbridge face 2-1.
The thermal resistor layer 3 is the material for having higher temperature resistance coefficient, including vanadium oxide, amorphous silicon, strontium titanates
Barium etc. makes to read electricity by the metal electrode of the contact hole 2-4, micro- support construction 2-2, micro-cantilever 2-3 and microbridge face 2-1
Road 1 is connect with thermal resistor layer 3.
The passivation insulation 4 mainly plays protection thermal resistor layer 3 and insulate with composite absorption film layer 5, and oxygen can be used
The materials such as SiClx, aluminium oxide, silicon nitride, boron nitride.
The composite absorption film layer 5 such as Fig. 3, specifically includes metal layer 5-1, dielectric layer 5-2, metal microarray from the bottom to top
Silicon, silica, silicon nitride, zinc sulphide, zinc selenide, indium phosphide, germanium, indium sulfide, fluorination can be selected in 5-3, dielectric layer 5-2
The materials such as magnesium, calcirm-fluoride；Metal material can select gold, silver, aluminium, tungsten, the low-loss materials such as titanium, platinum.
As another part of the invention, a kind of production side of composite absorption film layer non-refrigerating infrared focal plane is also provided
Method, the specific implementation steps are as follows.
Step 1: substrate of the cleaning containing CMOS integrated circuit, preparation 50~1000nm silica is as insulating layer and puts down
Smooth layer makes CMOS electrode pattern using photo etched mask on the insulating layer and flatness layer, and etching oxidation silicon exposes CMOS and reads
Electrode pair out completes reading circuit 1；
Step 2: sacrificial layer, thickness 1000- are made on the reading circuit 1 using polyimides or porous silicon
5000nm makes contact hole 2-4 using photo etched mask, etches exposed sacrificial layer, exposes CMOS electrode；
Step 3: silicon nitride film, thickness 200-800nm, using photoetching are prepared on the sacrificial layer using PECVD
2 figure of mask fabrication heat-insulated microbridge etches extra silicon nitride material and prepares contact hole 2-4, forms heat-insulated microbridge 2；
Step 4: 2 metal electrode figure of heat-insulated microbridge, evaporation metal material, thickness 150- are made using photo etched mask
300nm, removing form metal pattern configuration；With photoetching mask fabrication contact hole 2-4 figure, evaporation metal material, thickness 100-
800nm, other parts metal on stripping photoresist, formed connection electrode to and thermal resistor layer 3 metal electrode；
Step 5: 3 figure of photoetching mask fabrication thermal resistor layer is used on the microbridge face 2-1 of the heat-insulated microbridge 2, is made
With thermo-sensitive material, removing forms thermal resistor layer 3；
Step 6: using photoetching mask fabrication microbridge face 2-1 figure, prepares passivation insulation 4, thickness 20-200nm, removing
Remove excess stock；
Step 7: 5 figure of photoetching mask fabrication composite absorption film layer is used twice, prepares metal layer 5-1 30-200nm respectively
With dielectric layer 5-2 50-300nm, removing removal excess stock；
Step 8: sub-wavelength structure, evaporation metal 30-200nm are prepared using electron beam exposure mode, removing forms metal
Microarray 5-3；
Step 9: removal sacrificial layer forms non-refrigerating infrared focal plane, completes kind of a composite absorption film layer uncooled ir
The production method of focal plane.
To further explain composite absorption film layer non-refrigeration focal surface provided in an embodiment of the present invention and production method, under
Face illustrates a specific embodiment of the invention in conjunction with attached drawing.
Embodiment one:
A kind of composite absorption film layer non-refrigerating infrared focal plane is as shown in Figure 1.Focal plane pixel unit metal microarray knot
For structure as shown in figure 4, first medium layer 5-2-1 uses germanium (Ge) material, metal microarray 5-3 uses gold (Au), each metal list
Member is square the super pixel of structure 5-3-1.The side length of square structure 5-3-1 is 1 micron.Wavelength is red near 8 microns
External radiation is captured by composite absorption film layer 5, and converts light energy into the Joule heat of metal structure and the phonon absorption of dielectric structure,
And then thermal resistor layer 3 is heated, so that 5 temperature change of composite absorption film layer caused by tested infrared radiation signal be turned
Become electric signal, by reading circuit 1, and then obtains the infrared information of target, realize infrared detection image.
The present embodiment the production method is as follows:
Step 1: the substrate of cleaning silicon base CMOS integrated circuit, preparation 100nm silica as insulating layer and flatness layer,
CMOS electrode pattern is made using photo etched mask on the insulating layer and flatness layer, etching oxidation silicon exposes read-out electrode, complete
At reading circuit 1；
Step 2: make sacrificial layer on the reading circuit 1, using polyimides as sacrificial layer material, thickness
1000nm makes contact hole 2-4 using photo etched mask, etches exposed sacrificial layer, exposes CMOS electrode pair；
Step 3: silicon nitride film, thickness 200nm, using photo etched mask are prepared on the sacrificial layer using PECVD
2 figure of heat-insulated microbridge is made, extra silicon nitride material is etched and prepares contact hole 2-4, forms heat-insulated microbridge 2；
Step 4: making 2 metal electrode figure of heat-insulated microbridge using photo etched mask, be deposited titanium (Ti), thickness 150nm, stripping
From formation metal pattern configuration；With photoetching mask fabrication contact hole 2-4 figure, it is deposited titanium (Ti), thickness 400nm, stripping photolithography
Other parts metal on glue, formed connection electrode to and thermal resistor layer 3 metal electrode；
Step 5: 3 figure of photoetching mask fabrication thermal resistor layer is used on the microbridge face 2-1 of the heat-insulated microbridge 2, is made
With thermo-sensitive material vanadium oxide (VOx), removing forms thermal resistor layer 3；
Step 6: photoetching mask fabrication microbridge face 2-1 figure is used, silica (SiO is prepared2) passivation insulation 4, thickness
20nm, removing removal excess stock；
Step 7: using 5 figure of photoetching mask fabrication composite absorption film layer twice, prepares gold (Au) 30nm and first respectively and is situated between
Matter layer 5-2-1 germanium (Ge) 100nm, removing removal excess stock；
Step 8: preparing sub-wavelength structure using electron beam exposure mode, and gold (Au) 30nm is deposited, and removing forms micro- battle array
Column, metal unit are square structure 5-3-1.
Step 9: removal sacrificial layer forms non-refrigerating infrared focal plane, completes kind of a composite absorption film layer uncooled ir
The production method of focal plane.
Embodiment two
A kind of composite absorption film layer non-refrigerating infrared focal plane structure is as shown in Figure 1.The micro- battle array of focal plane pixel unit metal
For array structure as shown in figure 5, second dielectric layer 5-2-2 uses silicon (Si) material, metal microarray 5-3 uses gold (Au), Mei Gejin
Category unit is cross-shaped structure 5-3-2, and 2 microns of long side length, short side is 1 micron long, and wavelength is that the infra-red radiation near 9 microns is answered
It closes absorbing membranous layer 5 to capture, and converts light energy into the Joule heat of metal structure and the phonon absorption of dielectric structure, and then to temperature-sensitive
Resistive layer 3 is heated, so that 5 temperature change of composite absorption film layer caused by tested infrared radiation signal is transformed into telecommunications
Number, by reading circuit 1, and then the infrared information of target is obtained, realizes infrared detection image.
The present embodiment the production method is as follows
Step 1: the substrate of cleaning silicon base CMOS integrated circuit, preparation 100nm silica as insulating layer and flatness layer,
CMOS electrode pattern is made using photo etched mask on the insulating layer and flatness layer, etching oxidation silicon exposes read-out electrode pair,
Complete reading circuit 1；
Step 2: making sacrificial layer on the reading circuit 1, using porous silicon as sacrificial layer material, thickness 1500nm,
2 figure of heat-insulated microbridge is made using photo etched mask, carves and contact hole 2-4 is made using photo etched mask, etch exposed sacrificial layer, is revealed
CMOS electrode pair out；
Step 3: silicon nitride film, thickness 300nm, using photo etched mask are prepared on the sacrificial layer using PECVD
2 figure of heat-insulated microbridge is made, extra silicon nitride material is etched and prepares contact hole 2-4, forms heat-insulated microbridge 2；
Step 4: making 2 metal electrode figure of heat-insulated microbridge using photo etched mask, be deposited nickel (Ni), thickness 150nm, stripping
From formation metal pattern configuration；With photoetching mask fabrication contact hole 2-4 figure, it is deposited nickel (Ni), thickness 400nm, stripping photolithography
Other parts metal on glue, formed connection electrode to and thermal resistor layer 3 metal electrode；
Step 5: 3 figure of photoetching mask fabrication thermal resistor layer is used on the microbridge face 2-1 of the heat-insulated microbridge 2, is made
With thermo-sensitive material amorphous silicon (α-Si), removing forms thermal resistor layer 3；
Step 6: photoetching mask fabrication microbridge face 2-1 figure is used, silica (SiO is prepared2) passivation insulation 4, thickness
50nm, removing removal excess stock；
Step 7: using 5 figure of photoetching mask fabrication composite absorption film layer twice, prepares gold (Au) 50nm and second respectively and is situated between
Matter layer 5-2-2 silicon (Si) 130nm, removing removal excess stock；
Step 8: preparing sub-wavelength structure using electron beam exposure mode, and gold (Au) 50nm is deposited, and removing forms micro- battle array
Column, metal unit are cross-shaped structure 5-3-2.
Step 9: removal sacrificial layer forms non-refrigerating infrared focal plane, completes kind of a composite absorption film layer uncooled ir
The production method of focal plane.
Claims (4)
1. a kind of composite absorption film layer non-refrigerating infrared focal plane, which is characterized in that the focal plane is made of pixel array, each
Pixel successively includes: from the bottom to top
Reading circuit, the reading circuit are the silicon substrate or germanium base CMOS integrated circuit for having amplification and reducing noise function,
In CMOS production of integrated circuits electrode pair corresponding with pixel array position；
Heat-insulated microbridge, the heat-insulated microbridge include microbridge face, two micro- support constructions and two micro-cantilevers；The micro-cantilever
One end connects microbridge face, and the other end connects micro- support construction, is equipped with contact hole inside micro- support construction, each contact hole is set
It sets on one of the electrodes, the heat-insulated microbridge surface and inside are equipped with metal electrode；
Thermal resistor layer, the thermal resistor layer are that the absolute value of temperature resistance coefficient is higher than 2% material；The electrode is to logical
The metal electrode crossed positioned at the contact hole, micro-cantilever and microbridge face is connect with thermal resistor layer；
Passivation insulation, the passivation insulation protects thermal resistor layer, and thermistor and absorbing membranous layer are insulated；
Composite absorption film layer, the composite absorption film layer include metal layer, dielectric layer and metal microarray, and dielectric layer is red
Wave section low-loss material；The composite absorption film layer is insulated by the passivation insulation and the thermal resistor layer, described
Metal microarray is periodical sub-wavelength structure, and each metal unit is square or waits identical knot on the metal microarray
The cross sub-wavelength structure of structure is composed shape.
2. a kind of composite absorption film layer non-refrigerating infrared focal plane according to claim 1, which is characterized in that the metal
Unit is square on microarray, side length is 1 micron, can capture the infra-red radiation near 8 microns.
3. a kind of composite absorption film layer non-refrigerating infrared focal plane according to claim 1, which is characterized in that the metal
It is cross-shaped element on microarray, a length of 2 microns of long side, a length of 1 micron of short side, the infra-red radiation near 9 microns can be captured.
4. based on a kind of production method of composite absorption film layer non-refrigerating infrared focal plane described in claim 1, feature exists
In this method comprises the following steps:
Step 1: substrate of the cleaning containing CMOS integrated circuit, preparation 50~1000nm silica as insulating layer and flatness layer,
CMOS electrode pattern is made on the insulating layer and flatness layer, etching oxidation silicon exposes the electrode pair, completes reading circuit
Planarization；
Step 2: make thickness 1000-5000nm's using polyimides or porous silicon on the reading circuit described in step 1
Sacrificial layer makes contact hole on the sacrificial layer, exposes electrode；
Step 3: preparation is thin in the silicon nitride with a thickness of 200-800nm silicon nitride film on the sacrificial layer described in step 2
Heat-insulated microbridge figure is made on film, forms heat-insulated microbridge；
Step 4: evaporation thickness is the metal material of 150-300nm on the heat-insulated microbridge figure described in step 3, and production insulation is micro-
Bridge metal electrode figure removes extra other parts metal；Evaporation thickness 100-800nm metal material, production contact hole pattern
Shape, removes extra other parts metal, formed connection electrode to and thermal resistor layer metal electrode；
Step 5: the temperature-sensitive surface resistance layer with a thickness of 50-200nm is made on the microbridge face of the heat-insulated microbridge described in step 4；
Step 6: production is on the temperature-sensitive surface resistance layer described in step 5 with a thickness of 20-200nm passivation insulation；
Step 7: 30-200nm metal layer and 50-300nm dielectric layer are prepared in the passivation insulation described in step 6 respectively；
Step 8: evaporation metal 30-200nm on the dielectric layer described in step 7 prepares sub- wave using electron beam exposure mode
Long structure removes extra metal, forms metal microarray；
Step 9: removal sacrificial layer forms non-refrigerating infrared focal plane, completes composite absorption film layer non-refrigerating infrared focal plane
Production method.
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| CN113624347A (en) * | 2021-07-14 | 2021-11-09 | 东北师范大学 | Wave absorber long-wave infrared focal plane of metamaterial |
| CN113624347B (en) * | 2021-07-14 | 2024-06-07 | 东北师范大学 | Super-structure material wave-absorbing body wavelength infrared focal plane |
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