CN109813449A - A kind of integrated polarizing non-refrigerated infrared detector and production method - Google Patents
A kind of integrated polarizing non-refrigerated infrared detector and production method Download PDFInfo
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- CN109813449A CN109813449A CN201910101141.5A CN201910101141A CN109813449A CN 109813449 A CN109813449 A CN 109813449A CN 201910101141 A CN201910101141 A CN 201910101141A CN 109813449 A CN109813449 A CN 109813449A
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Abstract
A kind of integrated polarizing non-refrigerated infrared detector and production method are related to infrared polarization detection and technical field of imaging, solve the problems, such as the image error as caused by the deviation of the alignment between polarizing film and imaging unit.The focal plane of detector is made of the super pixel array that 2*2 pixel is constituted, the slit direction of each pixel is since 0 degree, increase or successively decrease one by one for variable quantity with 45 degree, the pixel of the focal plane successively includes: that reading circuit is the silicon substrate or germanium base CMOS integrated circuit for having amplification and reducing noise function from the bottom to top, and read-out electrode pair is arranged in CMOS integrated circuit；Heat-insulated microbridge includes microbridge face, two micro- support constructions and two micro-cantilevers；Thermal resistor layer is that the absolute value of temperature resistance coefficient is higher than 2% material；Read-out electrode is connect by through-hole with thermal resistor layer；Passivation insulation protects thermal resistor layer；Wide band absorption film layer includes metal layer, dielectric layer and metal microarray, and present invention process is simple, is conducive to large-scale low-cost preparation.
Description
Technical field
The present invention relates to infrared polarization detections and technical field of imaging more particularly to a kind of integrated polarizing uncooled ir to visit
Survey device and production method.
Background technique
Core component of the infrared detector as infrared imaging system has obtained quick hair in past tens of years
Exhibition not only militarily realizes thermal imaging, detection guidance etc., in industry, traffic, safety monitoring, meteorology, environment, medicine etc.
Numerous areas also has a wide range of applications.Infrared detector mainly divides refrigeration mode and non-refrigeration type infrared detector.Non-brake method is red
External detector is that absorbed layer temperature change caused by tested infrared radiation signal is transformed into telecommunications by thermistor material
Number, and then obtain the infrared information of target.Although compared with refrigeration type infrared detector in the presence of poor in terms of response time, sensitivity
Away from, but it can work at room temperature, be not required to complicated huge, expensive refrigeration mechanism, thus quality, volume, the service life, cost,
Power consumption, starting speed and stability etc. have exclusive outstanding advantage, make it in military individual equipment, unmanned plane and the people
The numerous areas such as fire-fighting and security protection all have sizable application demand, and market is to high performance uncooled ir
Detector demand is very urgent.
Infrared polarization Detection Techniques can obtain the intensity and polarization information of target emanation simultaneously, and it is right in complex background to meet
In the requirement of target accurately detecting, guarantee the accuracy of detection under the complex environments such as camouflage, smoke screen, for infrared detection technology
With revolutionary breakthrough.Therefore, market has more urgent demand for high performance infrared polarization detector.Outer polarization is visited
Survey is generally divided into timesharing, divides several polarization technologies such as amplitude, point aperture and point focal plane.With other Polarization Detection mode phases
Than point focal plane polarization detector has many advantages, such as that compact-sized, real-time is good, response efficiency is high and is answered extensively due to it
With.
As the core component of infrared polarization detector, it is traditional divide focal plane infrared polarization detector be by polarizing film with it is red
Outer focal plane is simply combined, i.e., the polarizing film of different directions is prepared into transparent substrates, then be attached to and prepared
On good imaging focal plane.In the matching process of polarizing film and imaging unit, inevitably introduces offset deviation, increases
The adjacent noise between pixel, leads to image error, and the response efficiency of final detector is also affected therewith.
Summary of the invention
In order to solve the problems in the existing technology, the present invention provides a kind of integrated polarizing non-refrigerated infrared detectors
And production method, i.e., structure directly is being selected at the polarization for preparing sub-wavelength dimensions on pixel, is realizing what polarization function integrated
The response rate of device is also greatly improved simultaneously, simplifies subsequent Optical System Design, to infrared polarization in structure and performance
Detector is promoted, and solves infrared polarization detector as caused by the deviation of the alignment between polarizing film and imaging unit
The problem of image error.
The technical proposal for solving the technical problem of the invention is as follows:
A kind of integrated polarizing non-refrigerated infrared detector, the super pixel array that the focal plane of detector is made of 2*2 pixel
Composition, the slit direction of each pixel increase or successively decrease one by one for variable quantity since 0 degree, with 45 degree, and each pixel is under
It is supreme successively to include:
Reading circuit, the reading circuit are the silicon substrate or the integrated electricity of germanium base CMOS for having amplification and reducing noise function
Road, in CMOS production of integrated circuits electrode pair corresponding with pixel array position；
Heat-insulated microbridge, the heat-insulated microbridge include microbridge face, two micro- support constructions and two micro-cantilevers；It is described micro- outstanding
Arm beam one end connects microbridge face, and the other end connects micro- support construction, is equipped with contact hole, each contact inside micro- support construction
Hole is arranged on one of the electrodes, and the heat-insulated microbridge surface and inside are equipped with metal electrode；
Thermal resistor layer, the thermal resistor layer are that the absolute value of temperature resistance coefficient is higher than 2% material；The electrode
Metal electrode by being located at the contact hole, micro-cantilever and microbridge face is connect with thermal resistor layer；
Passivation insulation, the passivation insulation protects thermal resistor layer, and thermistor and absorbing membranous layer are insulated；
Composite polarizing selects absorbing membranous layer, and the composite polarizing selection absorbing membranous layer includes metal layer, dielectric layer and polarization
Metal microarray is selected, dielectric layer is infrared band low-loss material；The composite polarizing selection absorbing film passes through described
Passivation insulation and the thermal resistor layer insulate, and the polarization selects metal microarray to polarize selection cycle arrangement for sub-wavelength
Structure, each metal unit is that metal period narrow slit structure combines or metal period short cord structure combination on the metal microarray
And it shapes.
A kind of production method of integrated polarizing non-refrigerated infrared detector, this method comprises the following steps:
Step 1: substrate of the cleaning containing CMOS integrated circuit, preparation 50~1000nm silica is as insulating layer and puts down
Smooth layer makes CMOS electrode pattern on the insulating layer and flatness layer, and etching oxidation silicon exposes the electrode pair, completes to read
Circuit flatness step；
Step 2: thickness 1000- is made using polyimides or porous silicon on the reading circuit described in step 1
The sacrificial layer of 5000nm makes contact hole on the sacrificial layer, exposes electrode pair；
Step 3: preparation is on the sacrificial layer described in step 2 with a thickness of 200-800nm silicon nitride film, in the nitridation
Heat-insulated microbridge figure is made on silicon thin film, forms heat-insulated microbridge；
Step 4: evaporation thickness is the metal electrode of 150-300nm on the heat-insulated microbridge described in step 3, and it is extra to remove
Other parts metal；Evaporation thickness 100-800nm metal material makes contact hole graph, removes extra other parts metal,
Formed connection electrode to and thermal resistor layer metal electrode；
Step 5: the temperature-sensitive surface resistance with a thickness of 50-200nm is made on the microbridge face of the heat-insulated microbridge described in step 4
Layer；
Step 6: production is on the temperature-sensitive surface resistance layer described in step 5 with a thickness of 20-200nm passivation insulation；
Step 7: 30-200nm metal layer and 50-300nm medium are prepared in the passivation insulation described in step 6 respectively
Layer；
Step 8: evaporation metal 30-200nm on the dielectric layer described in step 7 is prepared using electron beam exposure mode
Sub-wavelength polarization selection structure, removes extra metal, forms metal microarray；
Step 9: removal sacrificial layer, the production method for completing a kind of integrated polarizing non-refrigerated infrared detector.
The beneficial effects of the present invention are: a kind of integrated polarizing non-refrigerated infrared detector of the present invention is integrated to be had partially
The imaging unit of layer is inhaled in vibration selection, and a point focal plane Polarization Detection may be implemented.In structure, which greatly simplifies light
System is avoided when pasting polarizing film on imaging unit since alignment error generates noise；In performance, sub-wavelength polarization
For selection structure while carrying out polarization selection to incident field, near field can generate local enhancing phenomenon, improve detector coke
The light-matter interaction intensity of plane, and then improve the response rate of detector, can make up for it to a certain extent due to
Polarization selection bring light intensity loss.
Related production method of the invention is compatible with traditional non-refrigerated infrared detector processing technology, does not increase technique
Complexity is conducive to large-scale low-cost preparation.
Detailed description of the invention
A kind of integrated polarizing non-refrigerated infrared detector cellular construction schematic diagram of Fig. 1 present invention
A kind of integrated polarizing non-refrigerated infrared detector cellular construction sectional view of Fig. 2 present invention.
Fig. 3 composite polarizing of the present invention selects absorbing membranous layer sectional view.
Fig. 4 is one metal microarray structure schematic diagram of the embodiment of the present invention.
Fig. 5 is two metal micro array structure schematic diagram of the embodiment of the present invention.
In figure: 1, reading circuit, 2, heat-insulated microbridge, 2-1, microbridge face, 2-2, micro- support construction, 2-3, micro-cantilever, 2-
4, contact hole, 3, thermal resistor layer, 4, passivation insulation, 5, composite polarizing selection absorbing membranous layer, 5-1, metal layer, 5-2, medium
Layer, 5-2-1, first medium layer, 5-2-2, second dielectric layer, 5-3, metal microarray, 5-3-1, metal period narrow slit structure, 5-
3-2, metal period short-term structure.
Specific embodiment
The present invention provides a kind of integrated polarizing non-refrigerated infrared detectors, it is intended to simplify optical system, avoid being imaged
Since alignment error generates noise when pasting polarizing film on unit, realization divides focal plane Polarization Detection.The focal plane of detector is by 2*2 picture
Member constitute super pixel array composition, the slit direction of each pixel since 0 degree, with 45 degree be variable quantity increase one by one or
Successively decrease, specific structure as shown in Figure 1, include reading circuit 1, heat-insulated microbridge 2, thermal resistor layer 3, passivation insulation 4, it is compound partially
Vibration selection absorbing membranous layer 5.
The reading circuit 1 is silicon substrate or germanium base CMOS integrated circuit, has circuit amplification and reduces noise function,
Each reading circuit 1 has an electrode pair, two read-out electrodes；In the diagonal upper setting of the CMOS integrated circuit.
The heat-insulated microbridge 2 is as shown in Fig. 2, specifically include microbridge face 2-1, micro- support construction 2-2 and micro-cantilever 2-3；
The one end micro-cantilever 2-3 connects microbridge face 2-1, and the other end connects micro- support construction 2-2, setting contact in micro- support construction 2-2
Hole 2-4 need to make the electrode in thermal resistor layer 3 and reading circuit 1 to interconnection, so micro- support construction by contact hole 2-4
2-2 is arranged on the read-out electrode, the microbridge face 2-1 and two micro-cantilever 2-3 and the non-contact company of the reading circuit 1
It connects, vacantly on reading circuit 1；The position that two micro-cantilever 2-3 are connect with microbridge face 2-1 is located at the microbridge face 2-1's
Diagonal angle is used to support microbridge face 2-1.
The thermal resistor layer 3 is the material for having higher temperature resistance coefficient, including vanadium oxide, amorphous silicon, strontium titanates
Barium etc. makes to read electricity by the metal electrode of the contact hole 2-4, micro- support construction 2-2, micro-cantilever 2-3 and microbridge face 2-1
Road 1 is connect with thermal resistor layer 3.
The passivation insulation 4 mainly plays protection thermal resistor layer 3 and insulate with composite polarizing selection absorbing membranous layer 5,
The materials such as silica, aluminium oxide, silicon nitride, boron nitride can be used.
Described composite polarizing selection absorbing membranous layer 5 such as Fig. 3, specifically includes metal layer 5-1, dielectric layer 5-2, gold from the bottom to top
Belong to microarray 5-3, wherein metal microarray 5-3 is that sub-wavelength polarizes selection cycle arrangement architecture, middle dielectric layer 5-2 and metal
Layer 5-1 is antireflection metal layer.Dielectric layer 5-2 can be selected silicon, silica, silicon nitride, zinc sulphide, zinc selenide, indium phosphide, germanium,
The materials such as indium sulfide, magnesium fluoride, calcirm-fluoride；The material that metal material can select the resistance values such as gold, silver, copper, aluminium, titanium, platinum low.
As another part of the invention, a kind of production method of integrated polarizing non-refrigerated infrared detector is also provided, is had
Body realizes that steps are as follows.
Step 1: substrate of the cleaning containing CMOS integrated circuit, preparation 50~1000nm silica is as insulating layer and puts down
Smooth layer makes CMOS electrode pattern using photo etched mask on the insulating layer and flatness layer, and etching oxidation silicon exposes CMOS and reads
Electrode pair out completes reading circuit 1；
Step 2: sacrificial layer, thickness 1000- are made on the reading circuit 1 using polyimides or porous silicon
5000nm makes contact hole 2-4 using photo etched mask, etches exposed sacrificial layer, exposes CMOS electrode；
Step 3: silicon nitride film, thickness 200-800nm, using photoetching are prepared on the sacrificial layer using PECVD
2 figure of mask fabrication heat-insulated microbridge etches extra silicon nitride material and prepares contact hole 2-4, forms heat-insulated microbridge 2；
Step 4: 2 metal electrode figure of heat-insulated microbridge, evaporation metal material, thickness 150- are made using photo etched mask
300nm, removing form metal pattern configuration；With photoetching mask fabrication contact hole 2-4 figure, evaporation metal material, thickness 100-
800nm, other parts metal on stripping photoresist, formed connection electrode to and thermal resistor layer 3 metal electrode；
Step 5: 3 figure of photoetching mask fabrication thermal resistor layer is used on the microbridge face 2-1 of the heat-insulated microbridge 2, is made
With thermo-sensitive material, removing forms thermal resistor layer 3；
Step 6: using photoetching mask fabrication microbridge face 2-1 figure, prepares passivation insulation 4, thickness 20-200nm, removing
Remove excess stock；
Step 7: 5 figure of absorbing membranous layer is selected with photoetching mask fabrication composite polarizing twice, prepares metal layer 5-1 respectively
30-200nm and dielectric layer 5-2 50-300nm, removing removal excess stock；
Step 8: using electron beam exposure mode prepare sub-wavelength polarization Response to selection structure, evaporation metal 30-200nm,
Removing forms metal microarray 5-3；
Step 9: removal sacrificial layer forms non-refrigerating infrared focal plane, completes a kind of integrated polarizing uncooled ir spy
The production method for surveying device.
To further explain a kind of integrated polarizing non-refrigerated infrared detector provided in an embodiment of the present invention and production side
Method illustrates a specific embodiment of the invention with reference to the accompanying drawing.
Embodiment one:
A kind of integrated polarizing non-refrigerated infrared detector is as shown in Figure 1.Focal plane pixel unit metal micro array structure is such as
Shown in Fig. 4, first medium layer 5-2-1 use germanium (Ge) material, metal microarray 5-3 use gold (Au), each metal unit for
Sub-wavelength metal period narrow slit structure 5-3-1.The period of sub-wavelength metal period narrow slit structure 5-3-1 is 1 micron, width 0.2
Micron.Wavelength be 8 microns nearby the polarization direction infra-red radiation vertical with metallic slit absorbed by composite absorption layer, and by light
The Joule heat of metal structure and the phonon absorption of dielectric structure can be converted to, and then thermal resistor layer 3 is heated；And it polarizes
The infra-red radiation for being oriented parallel to slit is then almost reflected entirely.Composite polarizing caused by tested polarized ir radiation signal selects
5 temperature change of absorbing membranous layer is transformed into electric signal, then the intensity and polarization information of target object are obtained by reading circuit 1.
The present embodiment the production method is as follows:
Step 1: the substrate of cleaning silicon base CMOS integrated circuit, preparation 100nm silica as insulating layer and flatness layer,
CMOS electrode pattern is made using photo etched mask on the insulating layer and flatness layer, etching oxidation silicon exposes read-out electrode, complete
At reading circuit 1；
Step 2: make sacrificial layer on the reading circuit 1, using polyimides as sacrificial layer material, thickness
1000nm makes contact hole 2-4 using photo etched mask, etches exposed sacrificial layer, exposes CMOS electrode pair；
Step 3: silicon nitride film, thickness 200nm, using photo etched mask are prepared on the sacrificial layer using PECVD
2 figure of heat-insulated microbridge is made, extra silicon nitride material is etched and prepares contact hole 2-4, forms heat-insulated microbridge 2；
Step 4: making 2 metal electrode figure of heat-insulated microbridge using photo etched mask, be deposited titanium (Ti), thickness 150nm, stripping
From formation metal pattern configuration；With photoetching mask fabrication contact hole 2-4 figure, it is deposited titanium (Ti), thickness 400nm, stripping photolithography
Other parts metal on glue, formed connection electrode to and thermal resistor layer 3 metal electrode；
Step 5: 3 figure of photoetching mask fabrication thermal resistor layer is used on the microbridge face 2-1 of the heat-insulated microbridge 2, is made
With thermo-sensitive material vanadium oxide (VOx), removing forms thermal resistor layer 3；
Step 6: photoetching mask fabrication microbridge face 2-1 figure is used, silica (SiO is prepared2) passivation insulation 4, thickness
20nm, removing removal excess stock；
Step 7: 5 figure of absorbing membranous layer is selected with photoetching mask fabrication composite polarizing twice, prepares gold (Au) 30nm respectively
With first medium layer 5-2-1 germanium (Ge) 100nm, removing removal excess stock；
Step 8: preparing sub-wavelength structure using electron beam exposure mode, and gold (Au) 30nm is deposited, and removing forms micro- battle array
Column, metal unit are metal period narrow slit structure 5-3-1.
Step 9: removal sacrificial layer forms non-refrigerating infrared focal plane, completes a kind of integrated polarizing uncooled ir spy
The production method for surveying device.
Embodiment two
A kind of integrated polarizing non-refrigerated infrared detector is as shown in Figure 1.Focal plane pixel unit metal micro array structure is such as
Shown in Fig. 5, second dielectric layer 5-2-2 use silicon (Si) material, metal microarray 5-3 use gold (Au), each metal unit for
Sub-wavelength metal period short-term structure 5-3-2.The period of sub-wavelength metal period short-term structure 5-3-2 is 2 microns, width 0.5
Micron.Wavelength is absorbed for the 10 microns neighbouring polarization direction infra-red radiation vertical with metal short-term by composite absorption layer, and will
Luminous energy is converted to the Joule heat of metal structure and the phonon absorption of dielectric structure, and then heats to thermal resistor layer 3；And it is inclined
The infra-red radiation that vibration is oriented parallel to short-term is then almost reflected entirely.Composite polarizing caused by tested polarized ir radiation signal selects
It selects 5 temperature change of absorbing membranous layer and is transformed into electric signal, then obtain the intensity and polarization information of target object by reading circuit 1.
The present embodiment the production method is as follows:
Step 1: the substrate of cleaning silicon base CMOS integrated circuit, preparation 100nm silica as insulating layer and flatness layer,
CMOS electrode pattern is made using photo etched mask on the insulating layer and flatness layer, etching oxidation silicon exposes read-out electrode, complete
At reading circuit 1；
Step 2: make sacrificial layer on the reading circuit 1, using polyimides as sacrificial layer material, thickness
1000nm makes contact hole 2-4 using photo etched mask, etches exposed sacrificial layer, exposes CMOS electrode pair；
Step 3: silicon nitride film, thickness 200nm, using photo etched mask are prepared on the sacrificial layer using PECVD
2 figure of heat-insulated microbridge is made, extra silicon nitride material is etched and prepares contact hole 2-4, forms heat-insulated microbridge 2；
Step 4: making 2 metal electrode figure of heat-insulated microbridge using photo etched mask, be deposited titanium (Ti), thickness 150nm, stripping
From formation metal pattern configuration；With photoetching mask fabrication contact hole 2-4 figure, it is deposited titanium (Ti), thickness 400nm, stripping photolithography
Other parts metal on glue, formed connection electrode to and thermal resistor layer 3 metal electrode；
Step 5: 3 figure of photoetching mask fabrication thermal resistor layer is used on the microbridge face 2-1 of the heat-insulated microbridge 2, is made
With thermo-sensitive material vanadium oxide (VOx), removing forms thermal resistor layer 3；
Step 6: photoetching mask fabrication microbridge face 2-1 figure is used, silica (SiO is prepared2) passivation insulation 4, thickness
20nm, removing removal excess stock；
Step 7: 5 figure of absorbing membranous layer is selected with photoetching mask fabrication composite polarizing twice, prepares gold (Au) 30nm respectively
With first medium layer 5-2-2 silicon (Si) 100nm, removing removal excess stock；
Step 8: preparing sub-wavelength structure using electron beam exposure mode, and gold (Au) 30nm is deposited, and removing forms micro- battle array
Column, metal unit are metal period short-term structure 5-3-2.
Step 9: removal sacrificial layer forms non-refrigerating infrared focal plane, completes a kind of integrated polarizing uncooled ir spy
The production method for surveying device.
Embodiment three
A kind of integrated polarizing non-refrigerated infrared detector is as shown in Figure 1.In the pixel unit metal microarray of focal plane, first
Dielectric layer uses germanium (Ge) material, and metal microarray uses golden (Au), each metal unit for sub-wavelength metal period short-term knot
Structure.The period of sub-wavelength metal period short-term structure is 4 microns, 1 micron of width.Wavelength is 10 microns of nearby polarization direction and gold
Belong to the vertical infra-red radiation of short-term to be absorbed by composite absorption layer, and converts light energy into the Joule heat and medium knot of metal structure
The phonon absorption of structure, and then thermal resistor layer 3 is heated；And the infra-red radiation that polarization direction is parallel to short-term is then almost complete
It is reflected.Composite polarizing selection 5 temperature change of absorbing membranous layer caused by tested polarized ir radiation signal is transformed into electric signal, then
The intensity and polarization information of target object are obtained by reading circuit 1.
The present embodiment the production method is as follows:
Step 1: the substrate of cleaning silicon base CMOS integrated circuit, preparation 100nm silica as insulating layer and flatness layer,
CMOS electrode pattern is made using photo etched mask on the insulating layer and flatness layer, etching oxidation silicon exposes read-out electrode, complete
At reading circuit 1；
Step 2: make sacrificial layer on the reading circuit 1, using polyimides as sacrificial layer material, thickness
1000nm makes contact hole 2-4 using photo etched mask, etches exposed sacrificial layer, exposes CMOS electrode pair；
Step 3: silicon nitride film, thickness 200nm, using photo etched mask are prepared on the sacrificial layer using PECVD
2 figure of heat-insulated microbridge is made, extra silicon nitride material is etched and prepares contact hole 2-4, forms heat-insulated microbridge 2；
Step 4: making 2 metal electrode figure of heat-insulated microbridge using photo etched mask, be deposited titanium (Ti), thickness 150nm, stripping
From formation metal pattern configuration；With photoetching mask fabrication contact hole 2-4 figure, it is deposited titanium (Ti), thickness 400nm, stripping photolithography
Other parts metal on glue, formed connection electrode to and thermal resistor layer 3 metal electrode；
Step 5: 3 figure of photoetching mask fabrication thermal resistor layer is used on the microbridge face 2-1 of the heat-insulated microbridge 2, is made
With thermo-sensitive material vanadium oxide (VOx), removing forms thermal resistor layer 3；
Step 6: photoetching mask fabrication microbridge face 2-1 figure is used, silica (SiO is prepared2) passivation insulation 4, thickness
20nm, removing removal excess stock；
Step 7: 5 figure of absorbing membranous layer is selected with photoetching mask fabrication composite polarizing twice, prepares gold (Au) 30nm respectively
With first medium layer germanium (Ge) 100nm, removing removal excess stock；
Step 8: preparing sub-wavelength structure using electron beam exposure mode, and gold (Au) 30nm is deposited, and removing forms micro- battle array
Column, metal unit are metal period short-term structure.
Step 9: removal sacrificial layer forms non-refrigerating infrared focal plane, completes a kind of integrated polarizing uncooled ir spy
The production method for surveying device.
Claims (5)
1. a kind of integrated polarizing non-refrigerated infrared detector, which is characterized in that the focal plane of detector is made of super 2*2 pixel
Pixel array composition, the slit direction of each pixel increase or successively decrease one by one for variable quantity since 0 degree, with 45 degree, each
Pixel successively includes: from the bottom to top
Reading circuit, the reading circuit are the silicon substrate or germanium base CMOS integrated circuit for having amplification and reducing noise function,
In CMOS production of integrated circuits electrode pair corresponding with pixel array position；
Heat-insulated microbridge, the heat-insulated microbridge include microbridge face, two micro- support constructions and two micro-cantilevers；The micro-cantilever
One end connects microbridge face, and the other end connects micro- support construction, is equipped with contact hole inside micro- support construction, each contact hole is set
It sets on one of the electrodes, the heat-insulated microbridge surface and inside are equipped with metal electrode；
Thermal resistor layer, the thermal resistor layer are that the absolute value of temperature resistance coefficient is higher than 2% material；The electrode is to logical
The metal electrode crossed positioned at the contact hole, micro-cantilever and microbridge face is connect with thermal resistor layer；
Passivation insulation, the passivation insulation protects thermal resistor layer, and thermistor and absorbing membranous layer are insulated；
Composite polarizing selects absorbing membranous layer, and the composite polarizing selection absorbing membranous layer includes metal layer, dielectric layer and polarization selection
Metal microarray, dielectric layer are infrared band low-loss material；The composite polarizing selection absorbing film passes through the passivation
Insulating layer and the thermal resistor layer insulate, and the polarization selects metal microarray to polarize selection cycle arrangement knot for sub-wavelength
Structure, on the metal microarray each metal unit be metal period narrow slit structure combine or metal period short cord structure combination and
Forming.
2. a kind of integrated polarizing non-refrigerated infrared detector according to claim 1, which is characterized in that the dielectric layer is
Germanium, it is polarization side near 1 micron, 0.2 micron of width, 8 microns that the polarization, which selects the metal period slit on metal microarray,
It is absorbed to the infra-red radiation vertical with metal period slit by composite polarizing selection absorbed layer.
3. a kind of integrated polarizing non-refrigerated infrared detector according to claim 1, which is characterized in that the dielectric layer is
Silicon, it is polarization side near 2 microns, 0.5 micron of width, 10 microns that the polarization, which selects the metal period short-term on metal microarray,
It is absorbed to the infra-red radiation vertical with metal period slit by composite polarizing selection absorbed layer.
4. a kind of integrated polarizing non-refrigerated infrared detector according to claim 1, which is characterized in that the dielectric layer is
Germanium, it is polarization direction near 4 microns, 1 micron of width, 10 microns that the polarization, which selects the metal period short-term on metal microarray,
The infra-red radiation vertical with metal period slit is absorbed by composite polarizing selection absorbed layer.
5. based on a kind of production method of integrated polarizing non-refrigerated infrared detector described in claim 1, which is characterized in that should
Method includes the following steps:
Step 1: substrate of the cleaning containing CMOS integrated circuit, preparation 50~1000nm silica as insulating layer and flatness layer,
CMOS electrode pattern is made on the insulating layer and flatness layer, etching oxidation silicon exposes the electrode pair, completes reading circuit
Planarisation step；
Step 2: make thickness 1000-5000nm's using polyimides or porous silicon on the reading circuit described in step 1
Sacrificial layer makes contact hole on the sacrificial layer, exposes electrode pair；
Step 3: preparation is thin in the silicon nitride with a thickness of 200-800nm silicon nitride film on the sacrificial layer described in step 2
Heat-insulated microbridge figure is made on film, forms heat-insulated microbridge；
Step 4: evaporation thickness is the metal electrode figure of 150-300nm on the heat-insulated microbridge described in step 3, and it is extra to remove
Other parts metal；Evaporation thickness 100-800nm metal material makes contact hole graph, removes extra other parts metal,
Formed connection electrode to and thermal resistor layer metal electrode；
Step 5: the temperature-sensitive surface resistance layer with a thickness of 50-200nm is made on the microbridge face of the heat-insulated microbridge described in step 4；
Step 6: production is on the temperature-sensitive surface resistance layer described in step 5 with a thickness of 20-200nm passivation insulation；
Step 7: 30-200nm metal layer and 50-300nm dielectric layer are prepared in the passivation insulation described in step 6 respectively；
Step 8: evaporation metal 30-200nm on the dielectric layer described in step 7 prepares sub- wave using electron beam exposure mode
Long polarization selection structure, removes extra metal, forms metal microarray；
Step 9: removal sacrificial layer, the production method for completing a kind of integrated polarizing non-refrigerated infrared detector.
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| CN111121978A (en) * | 2019-11-18 | 2020-05-08 | 中国空间技术研究院 | Broadband non-refrigeration infrared polarization sensitive pixel structure, array and preparation method |
| CN111896122A (en) * | 2020-08-11 | 2020-11-06 | 烟台睿创微纳技术股份有限公司 | Polarization non-refrigeration infrared detector and preparation method thereof |
| CN113432724A (en) * | 2021-06-25 | 2021-09-24 | 北京北方高业科技有限公司 | Uncooled tuned infrared detector |
| CN113447142A (en) * | 2021-06-25 | 2021-09-28 | 北京北方高业科技有限公司 | Reinforced CMOS infrared detector |
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Application publication date: 20190528 |