CN103193190A - Infrared-terahertz dual-band array detector microbridge structure and preparation method thereof - Google Patents
Infrared-terahertz dual-band array detector microbridge structure and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a microbridge structure of an infrared-terahertz dual-band array detector and a preparation method thereof, which are used for detecting and imaging infrared and terahertz bands. The top layer of the micro-bridge structure is a double-layer vanadium oxide film, the lower vanadium oxide film is a phase-change-free vanadium oxide film with a high Temperature Coefficient of Resistance (TCR) and is used as a sensitive layer of infrared and terahertz wave bands, the upper vanadium oxide film has a lower phase-change temperature and can generate semiconductor phase-metal phase reversible phase change, the semiconductor phase and the lower vanadium oxide film are used as an infrared absorption layer together, and the semiconductor phase and the lower vanadium oxide film are used as terahertz radiation absorption layers after being changed into a metal phase. The resonance of the micro-bridge structure can be utilized to fully absorb infrared radiation, photoelectric parameters such as conductivity, refractive index and the like of the metal phase vanadium oxide film are adjusted, and the maximization of terahertz radiation absorption can be realized. The micro-bridge structure can realize dual-band detection and imaging, has simple preparation process, is compatible with MEMS process, and has wide application prospect.
Description
Technical field
The present invention relates to infrared and Terahertz and survey and technical field of imaging, be specifically related to a kind of micro-bridge structure for infrared-Terahertz two waveband detector array and preparation method thereof.
Background technology
Infrared detection technique has obtained using widely aspect civil and military as the additional and expansion to human sense organ.At present the photon detector of comparative maturity has been applied to fields such as communication, medical science, military affairs, but because must freeze during its work, causes whole system huge, and complex structure and cost are higher, thereby can't apply on a large scale.The development of large scale integrated circuit technology makes the development of non-refrigerated infrared detector become possibility.At present un-cooled infrared focal plane array (IRFPA) technology has become the direction of the main flow of infrared detection technique, and this technology makes us just can obtain to have the very Infrared Detectors of hypersensitivity energy at normal temperatures.In addition, its cost is low, volume is little, in light weight, lot of advantages such as power consumption is little and response wave band is wide, makes its large-scale marketization become possibility.
The mainstream technology of non-refrigerated infrared focal plane probe is thermistor-type micrometering bolometer at present.Realize the infrared acquisition under the room temperature, the design of detecting structure is the key of non-refrigerating infrared focal plane device.Micro-bridge structure is a kind of typical detecting structure.Adopt photoetching method to produce supporting layer and sensitive layer pattern and remove the method for sacrifice layer at last at sacrifice layer, can form a freestanding thermal isolation micro-bridge structure.Microbridge is made up of bridge pier, bridge leg and bridge floor, is produced on the substrate that has reading circuit, and bridge pier supports bridge leg and bridge floor, makes bridge leg and bridge floor unsettled, and infrared absorption layer and thermosensitive film are deposited on the bridge floor.When device is worked, infra-red radiation is collected and focused on to the lens that adopt germanium to make to the sensing element array that is positioned on the optical system focal plane, the variation of target infra-red radiation is detected by the infrared acquisition film on the bridge floor, be reflected to thermosensitive film temperature and changes in resistance, by the electricity passage that is produced in the microbridge this variation is delivered to the substrate reading circuit, be reduced into image information, realize the detection to echo signal.In order to take full advantage of the infra-red radiation of object, usually increase one deck catoptric arrangement in the sacrifice layer bottom to improve sensitive layer to the absorption of infra-red radiation, it has been generally acknowledged that sensitive layer and reflecting layer distance is best for the microcavity assimilation effect that formed of incident IR wavelength at 1/4 o'clock.
According to the difference of the thermistor material that uses, non-refrigerated infrared focal plane probe can be divided into vanadium oxide (VO
x) two kinds of detector and non-crystalline silicon detectors.The vanadium oxide technology is researched and developed success in the early 1990s by the Honeywell company of the U.S., and several companies such as its license BAE, L-3/IR, FLIR-INDIGO, DRS, NEC and SCD produce at present.Amorphous silicon technology is is mainly researched and developed successfully in late nineteen nineties by the CEA/LETI/LIR laboratory of France, and main SOFRADIR and ULIS company by France produces at present.Vanadium oxide is very sensitive to the room temperature resistance variations in temperature, can obtain bigger temperature-coefficient of electrical resistance (TCR, Yi Ban Wei – 2%/K ~ – 3%/K), resistance value can be controlled in several kilo-ohms to several ten thousand Europe, 1/f noise is lower, the film deposition techniques maturation is the thermistor material of present no-refrigeration infrared focal plane detector first-selection simultaneously.Companies such as Raytheon, BAE, DRS, Indigo, NEC and SCD can both produce the vanadium oxide no-refrigeration infrared focal plane detector of 160 * 120 ~ 640 * 480 arrays, and its noise equivalent temperature difference (NETD) is 20 ~ 100mK.At present, 1024 * 1024 arrays are all being studied by BAE and DRS company, pixel dimension 15 μ m, NETD are the extensive vanadium oxide no-refrigeration infrared focal plane detector of 50mK.
The electromagnetic radiation of Terahertz (Terahertz, THz) ripple refers to that frequency is between 0.1 ~ 10THz(wavelength 3mm ~ 30 m), its electromagnetic spectrum is between microwave and infrared band.Therefore, the Terahertz system takes into account the advantage of electronics and optical system.For a long time, produce and detection method owing to lack effective terahertz emission, people are very limited for the understanding of this wave band electromagnetic radiation character, so that this wave band is called as the Terahertz space in the electromagnetic spectrum.This wave band also is last frequency window that pending comprehensive research is arranged in the electromagnetic spectrum.Compare with the electromagnetic wave of other wave band, terahertz electromagnetic wave has the character of following uniqueness: 1. transient state: the typical pulse-widths of terahertz pulse is at picosecond magnitude; 2. broadband property: the terahertz pulse source only comprises the electromagnetic viscosimeter in several cycles usually, and the frequency band of individual pulse can cover the scope of GHz to tens THz; 3. coherence: the coherent measurement technology of terahertz time-domain spectroscopic technology can directly be measured amplitude and the phase place of Terahertz electric field, can extract refractive index, the absorption coefficient of sample easily; 4. low energy: the energy of Terahertz photon has only the milli electron-volt, can not destroy detected material because of ionization, thereby can carry out detection and the diagnosis of biomedical aspect safely; 5. penetrability: terahertz emission is for a lot of nonpolar megohmite insulants, and for example packaging material such as hardboard, plastics, yarn fabric have very high through characteristic, can be used for surveying concealing object.These characteristics of THz wave make it at object image-forming, environmental monitoring, medical diagnosis, radio astronomy, broadband mobile communication, especially have great scientific value and a wide application prospect at aspects such as satellite communication and military radars.In recent years because the development of free electron laser and ultrafast laser technique, for the generation of terahertz pulse provides stable, excitation source reliably, make the research of mechanism of production, detection technique and the application technology of terahertz emission obtain flourish.
Terahertz detector is Terahertz Technology key in application device.In the development and application of terahertz detector, detect the terahertz emission signal and have very important meaning.Traditional un-cooled infrared focal plane array structure can be used for detection and the imaging of terahertz wave band in theory.According to 1/4 wavelength theory, be example with radiation frequency 3THz, for fully absorbing terahertz emission, the optical resonantor height of un-cooled infrared focal plane array should be 1/4 wavelength of 25 μ m(incident radiations).But such resonator height is difficult to realize (the resonator height of traditional un-cooled infrared focal plane array is about 1.5 ~ 3 μ m) in preparation of devices.If do not change the resonator height, its film structure is extremely low to the absorption of terahertz emission, makes that the difficulty of signal detection is bigger.At document (F. Simoens, etc, " Terahertz imaging with a quantum cascade laser and amorphous-silicon microbolometer array ", Proceedings of SPIE, vol. 7485, pp. 74850M-1 – 74850M-9,2009) in, to be used for terahertz imaging based on the un-cooled infrared focal plane array of non-crystalline silicon, through simulation and experiment measuring, the terahertz emission absorptivity of probe unit only is 0.16 ~ 0.17%.Therefore, solution commonly used at present is: keep the resonator height of un-cooled infrared focal plane array constant, increase the special terahertz emission absorbed layer of one deck on the top layer of film structure, to realize detection and the imaging of terahertz emission.Alan W. M. Lee etc. has reported that employing 160 * 120 un-cooled infrared focal plane arrays carry out in real time, THz wave imaging continuously.Sensitive material is the vanadium oxide film that is positioned on the silicon nitride microbridge.They propose, for improving signal to noise ratio and spatial resolution, need to improve the design of focal plane arrays (FPA), groundwork wherein is to optimize terahertz emission absorbing material (Alan W. M. Lee, etc, " Real-time; continuous-wave terahertz imaging by use of a microbolometer focal-plane array ", Optics Letters, vol. 30, pp. 2563 – 2565,2005).
Thin metal or metal composite thin film can absorb terahertz emission, and the thickness that while thickness is lower than 50nm is very little to the thermal capacitance influence of detector, is beneficial to the making of high speed of response probe unit, is commonly used for the absorbed layer of Terahertz microarray detector.N. employing such as Oda is carried out the detection of terahertz emission based on 320 * 240 and 640 * 480 un-cooled infrared focal plane arrays of vanadium oxide thermosensitive film.Because original film structure only is 2.6 ~ 4% to the absorptivity of terahertz emission.Therefore, they have the metallic film of suitable square resistance as the terahertz emission absorbed layer at top layer increase one deck of film structure, noise equivalent power when the incident radiation frequency is 3THz is down to 40pW(N. Oda, etc, " Detection of terahertz radiation from quantum cascade laser using vanadium oxide microbolometer focal plane arrays ", Proceedings of SPIE, vol. 6940, pp. 69402Y-1 – 69402Y-12,2008).Metallic film is used as the terahertz emission absorbed layer at document (L. Marchese, etc, " A microbolometer-based THz imager ", Proceedings of SPIE, vol. 7671, pp. 76710Z-1 – 76710Z-8,2010) report is arranged also, terahertz emission can be absorbed maximization by the thickness of optimizing the metal absorbed layer.
In bibliographical information, increase the layer of metal film as behind the terahertz emission absorbed layer, un-cooled infrared focal plane array can be used for detection and the imaging of terahertz wave band.But in probe unit, adopt double-deck vanadium oxide film simultaneously as absorption and sensitive layer infrared and terahertz wave band, utilize the reversible transition of upper strata vanadium oxide film to realize that two waveband is surveyed and imaging does not appear in the newspapers as yet, also do not have the application of related invention patent.
Summary of the invention
Problem to be solved by this invention is: how a kind of micro-bridge structure for infrared-Terahertz two waveband detector array is provided, and this micro-bridge structure can be realized detection and the imaging of infrared-Terahertz two waveband.
Technical problem proposed by the invention is to solve like this: a kind of micro-bridge structure for infrared-Terahertz two waveband detector array is provided, it is characterized in that: comprise substrate 10, drive circuit 20, sacrifice layer 30, described drive circuit is arranged on the substrate 10, and this drive circuit 20 is provided with circuit interface 21; Described sacrifice layer 30 preparations have on the substrate of drive circuit at this, and from bottom to top preparing successively on drive circuit has cushion 40, supporting layer 50, top electrodes 60, and this top electrodes is connected with described circuit interface; On this top electrodes and supporting layer, from bottom to top prepare successively lower floor's vanadium oxide film and upper strata vanadium oxide film are arranged.
In the present invention, described lower floor vanadium oxide film is the no phase transformation vanadium oxide film with high temperature coefficient of resistance, as sensitive layer infrared and terahertz wave band,
In the present invention, the reversible transition of semiconductor phase-metal phase can take place in described upper strata vanadium oxide film, for the semiconductor phase time is used as infrared absorption layer with lower floor's vanadium oxide film; For metal is used as the terahertz emission absorbed layer in the back mutually.
In the present invention, the phase transition temperature of described upper strata vanadium oxide film is 20 ~ 60 ℃, and thickness is 5 ~ 100nm; The temperature-coefficient of electrical resistance Wei – 2%/K ~ – 6%/K of described lower floor vanadium oxide film, thickness is 30 ~ 200nm.
In the present invention, after described sacrifice layer discharged, the position of former sacrifice layer formed resonator, this resonator height be the about infra-red radiation wavelength of 1.5 ~ 3 μ m(1/4), with the target emanation of abundant absorption infrared band.
In the present invention, described sacrificial layer material is a kind of in the porous silicon of polyimides, silica, oxidation and the phosphorosilicate glass.
Described supporting layer is made of single thin film or is made of plural layers, and material is silica or silicon nitride, and the thickness of supporting layer is between 0.1 ~ 1 μ m.
Described cushioning layer material is metal or metal alloy or nonmetallic materials; Described top electrodes layer material is aluminium, tungsten, titanium, platinum, nickel, chromium or any their alloy.
Preparation method according to micro-bridge structure provided by the present invention is characterized in that, may further comprise the steps:
1. at the substrate growth sacrifice layer that has drive circuit and graphical, make the section configuration of sacrifice layer pattern edge present the trapezoid shape, expose the circuit interface of drive circuit;
2. the substrate at existing sacrifice layer pattern prepares the cushion pattern;
3. step 2. the device of gained prepare supporting layer, and form the supporting layer pattern with photoetching process, expose electrode interface;
4. step 3. the device of gained prepare top electrode layer, and form the top electrodes layer pattern with photoetching process, require top electrode layer to be electrically connected with electrode interface;
5. in the substrate preparation for preparing top electrode layer as lower floor's vanadium oxide film of sensitive layer and it is graphical;
6. preparation has the upper strata vanadium oxide film of low transformation temperature and it is graphical;
7. releasing sacrificial layer forms micro-bridge structure, encapsulates the formation probe unit then.
Lower floor's vanadium oxide film as sensitive layer adopts the magnetron sputtering method preparation; The control sputtering power is 100 ~ 500W during sputter, and partial pressure of oxygen is 0.5% ~ 10%, and sputtering time is 5 ~ 60min, and annealing temperature is 200 ~ 600 ℃.
Upper strata vanadium oxide film with low transformation temperature adopts the magnetron sputtering method preparation; Doping elements is titanium, molybdenum, tungsten etc. during preparation, and doping content is 0.1 ~ 10%; The control sputtering power is 50 ~ 300W, and partial pressure of oxygen is 0.5% ~ 8%, and sputtering time is 2 ~ 30min, and annealing temperature is 200 ~ 600 ℃.
Compared with prior art, the present invention has following beneficial effect:
The present invention adopts double-deck vanadium oxide film simultaneously as absorption and sensitive layer infrared and terahertz wave band, utilizes the reversible transition of upper strata vanadium oxide film to realize two waveband detection and imaging, and preparation technology's advantages of simple.
Description of drawings
A ~ h is the simple and easy preparation flow of micro-bridge structure of the present invention among Fig. 1, wherein Fig. 1-a is for having the substrate of bottom drive circuit, Fig. 1-b is the substrate for preparing the sacrifice layer figure, Fig. 1-c is the substrate of preparing the cushion figure, Fig. 1-d is the substrate for preparing the supporting layer figure, Fig. 1-e is the substrate for preparing the top electrodes layer pattern, 1-f is the substrate for preparing lower floor's vanadium oxide film figure, 1-g is the substrate for preparing upper strata vanadium oxide film figure, and 1-h is the device architecture generalized section that discharges behind the sacrifice layer;
Fig. 2 is that the resistance of lower floor's vanadium oxide film in the embodiments of the invention 2 is with the variation of temperature curve;
Fig. 3 be embodiments of the invention 2 at the middle and upper levels the resistance of vanadium oxide film with the variation of temperature curve;
Reference numeral: 10 is that substrate, 20 is that drive circuit, 21 is that circuit interface, 30 is that sacrifice layer, 40 is that cushion, 50 is that supporting layer, 60 is that top electrode layer, 70 is that lower floor's vanadium oxide film, 80 is the upper strata vanadium oxide film.
The specific embodiment
Be further described below in conjunction with accompanying drawing and the present invention of embodiment:
The invention provides a kind of micro-bridge structure for infrared-Terahertz two waveband detector array, it is characterized in that: comprise substrate 10, drive circuit 20, sacrifice layer 30, described drive circuit is arranged on the substrate 10, and this drive circuit 20 is provided with circuit interface 21; Described sacrifice layer 30 preparations have on the substrate of drive circuit at this, and from bottom to top preparing successively on drive circuit has cushion 40, supporting layer 50, top electrodes 60, and this top electrodes is connected with described circuit interface; On this top electrodes and supporting layer, from bottom to top prepare successively lower floor's vanadium oxide film and upper strata vanadium oxide film are arranged.
The preparation flow of micro-bridge structure of the present invention comprises: carry out the preparation of sacrifice layer 30 at the substrate 10 that has drive circuit 20, and form the sacrifice layer pattern with photoetching process, formed sacrifice layer pattern will expose bottom circuit interface 21; Preparation cushion 40 patterns; Preparation supporting layer 50, and with photoetching process formation supporting layer pattern, expose electrode interface 21; Preparation top electrode layer 60, and with photoetching process formation top metal electrode pattern, require top electrodes to link to each other with electrode interface 21; Preparation is as lower floor's vanadium oxide film 70 of sensitive layer and it is graphical; Preparation is as the upper strata vanadium oxide film 80 of absorbed layer and it is graphical; Behind releasing sacrificial layer, form infrared and the terahertz emission probe unit.
In the micro-bridge structure, the resonator height be the about infra-red radiation wavelength of 1.5 ~ 3 μ m(1/4), with the target emanation of abundant absorption infrared band; Described sacrificial layer material is porous silicon, phosphorosilicate glass of polyimides, silica, oxidation etc., and sacrifice layer can be removed with oxygen plasma bombardment, reactive ion etching or with chemical reagent.Backing material requires it to have the stability that certain rigid guarantees micro-bridge structure, have low stress and guarantee that microbridge is subjected to thermal deformation less, select the lower material of heat conduction to prepare bridge floor simultaneously as far as possible, described supporting layer is made of single thin film or is made of plural layers, material is silica or silicon nitride, and the thickness of supporting layer is between 0.1 ~ 1 μ m.The purpose that cushion is set is the difference in height that weakens between circuit interface and the top electrode layer, and with being connected of convenient bottom circuit and top metal wires, described cushioning layer material is metal or metal alloy or nonmetallic materials; Described top electrodes layer material is aluminium, tungsten, titanium, platinum, nickel, chromium or any their alloy.
Lower floor's vanadium oxide film is the no phase transformation vanadium oxide film with high temperature coefficient of resistance, as sensitive layer infrared and terahertz wave band, adopts the magnetron sputtering method preparation.The control sputtering power is 100 ~ 500W during sputter, and partial pressure of oxygen is 0.5% ~ 10%, and sputtering time is 5 ~ 60min, and annealing temperature is 200 ~ 600 ℃.The temperature-coefficient of electrical resistance Wei – 2%/K ~ – 6%/K of the vanadium oxide film of preparation, thickness is 30 ~ 200nm.
The upper strata vanadium oxide film has low transformation temperature, and the reversible transition of semiconductor phase-metal phase can take place, and the semiconductor phase time, becomes metal mutually and is used as the terahertz emission absorbed layer in the back mutually as infrared absorption layer with lower floor's vanadium oxide film.Excite the reversible transition of upper strata vanadium oxide film by adding methods such as heat, bias voltage, regulate the photoelectric parameters such as electrical conductivity, refractive index of its metal phase, can realize the maximization that terahertz emission is absorbed.Described upper strata vanadium oxide film adopts the magnetron sputtering method preparation.Low transformation temperature obtains by mixing.Doping elements is titanium, molybdenum, tungsten etc. during preparation, and doping content is 0.1 ~ 10%.The control sputtering power is 50 ~ 300W, and partial pressure of oxygen is 0.5% ~ 8%, and sputtering time is 2 ~ 30min, and annealing temperature is 200 ~ 600 ℃.The phase transition temperature of the vanadium oxide film of preparation is 20 ~ 60 ℃, and thickness is 5 ~ 100nm.
The present invention will be further described by the following examples:
Embodiment 1
A kind of micro-bridge structure for infrared-Terahertz two waveband detector array, its preparation flow as shown in Figure 1.
The substrate 10 of this micro-bridge structure drive circuit 20 bottom preparing launches, and drive circuit 20 has been reserved circuit interface 21, shown in Fig. 1-a.
Clean substrate surface, remove surface contamination, and substrate is carried out 200
oToast under the C, to remove the steam on surface, strengthen adhesive property.Carry out the coating of light-sensitive polyimide (sacrifice layer) with the automatic glue application track, regulate the thickness of Kapton by rotating speed, the light-sensitive polyimide that applies is carried out 120
oBaking under the C is beneficial to the neat of exposure lines to remove the solvent in the part glue.Adopt the NIKON litho machine that light-sensitive polyimide is carried out exposure process, deliver to automatic development track through the substrate of overexposure and carry out the development of glue, developer solution is the developer for positive photoresist TMAH of standard.Light-sensitive polyimide figure after the development presents the bridge pier sectional hole patterns, shown in Fig. 1-b.Subsequently Kapton is placed on and carries out imidization in the annealing baking oven of blanketing with inert gas and handle, the imidization temperature is set to the stage and rises, and maximum temperature is 250
oC ~ 400
oC, constant temperature time is 30 ~ 120min, the polyimides thickness after the imidization is in 1.5 ~ 3 mu m ranges.
Adopt the AZ5214 photoresist to carry out the preparation of metallic aluminium cushion figure.At first the rotation of AZ5214 photoresist is coated in substrate surface, carries out mask exposure then, toast (110 with hot plate after exposure is finished
oC 1.5min) allows the glue of exposed portion change, and carries out general exposure process then, develops then to obtain the pattern that need peel off.Adopt magnetron sputtering method to prepare the metallic aluminium film, the thickness of aluminium film is in 0.3 ~ 1.5 mu m range.Under ultrasound condition, carry out peeling off of photoresist with acetone soln then.Peel off the back at the unilateral aluminium cushion figure that stays shown in Fig. 1-c.
Adopt PECVD equipment and mixing sputtering technology to make the silicon nitride support layer of low stress, the thickness range of preparation silicon nitride layer is in 0.2 ~ 1 mu m range.Then this layer film is carried out photoetching and etching, etch the figure that supports bridge floor.This layer silicon nitride is at the visuals aluminium coating cushion pattern at bridge pier place, shown in Fig. 1-d.
Adopt the AZ5214 photoresist to carry out the preparation of NiCr top electrodes figure.At first the rotation of AZ5214 photoresist is coated in the substrate surface that has prepared the substrate supports layer, carries out mask exposure then, toasting (110 with hot plate after exposure is finished
oC 1.5min) allows the glue of exposed portion change, and carries out general exposure process then, develops then to obtain the pattern that need peel off.Adopt magnetron sputtering method to prepare the NiCr film, the thickness of NiCr film is in 0.05 ~ 0.3 mu m range.Under ultrasound condition, carry out peeling off of photoresist with acetone soln then.Peel off the back at the unilateral NiCr electrode pattern that stays shown in Fig. 1-e.This figure links to each other with the bottom circuit interface.
After preparing contact conductor, prepare lower floor's vanadium oxide film as sensitive layer infrared and terahertz wave band with sputtering equipment again.The control sputtering power is 100 ~ 500W during sputter, and partial pressure of oxygen is 0.5% ~ 10%, and sputtering time is 5 ~ 60min, and annealing temperature is 200 ~ 600 ℃.The temperature-coefficient of electrical resistance Wei – 2%/K ~ – 6%/K of the vanadium oxide film of preparation, thickness is 30 ~ 200nm.Then this layer vanadium oxide film carried out photoetching and etching, etch the lower floor's vanadium oxide film figure shown in Fig. 1-f.
After preparing lower floor's vanadium oxide film, prepare the upper strata vanadium oxide film as absorbed layer infrared and terahertz wave band with sputtering equipment again.Obtain low transformation temperature by mixing, doping elements is titanium, molybdenum, tungsten etc., and doping content is 0.1 ~ 10%.The control sputtering power is 50 ~ 300W, and partial pressure of oxygen is 0.5% ~ 8%, and sputtering time is 2 ~ 30min, and annealing temperature is 200 ~ 600 ℃.The phase transition temperature of the vanadium oxide film of preparation is 20 ~ 60 ℃, and thickness is 5 ~ 100nm.Then this layer vanadium oxide film carried out photoetching and etching, etch the upper strata vanadium oxide film figure shown in Fig. 1-g.
Finish the device of double-deck vanadium oxide film pattern with the oxygen gas plasma bombardment, the light-sensitive polyimide (sacrifice layer) of imidization is removed, formation has the infrared and terahertz emission probe unit of silicon nitride bridge floor supporting construction, and the generalized section of this probe unit is shown in Fig. 1-h.
Embodiment 2
Double-deck vanadium oxide film, wherein lower floor's vanadium oxide film is the no phase transformation vanadium oxide film with high temperature coefficient of resistance, as sensitive layer infrared and terahertz wave band; The upper strata vanadium oxide film has low transformation temperature, as absorbed layer infrared and terahertz wave band.
Lower floor's vanadium oxide film adopts the magnetron sputtering method preparation.The control sputtering power is 450W during sputter, and partial pressure of oxygen is 7%, and sputtering time is 30min, the about 70nm of film thickness, and annealing temperature is 350 ℃.The resistance of the vanadium oxide film of preparation with the variation of temperature curve as shown in Figure 2, film is at 20 ~ 80 ℃ temperature-coefficient of electrical resistance Wei – 3%/K ~ – 5%/K.
Adopt magnetron sputtering method to prepare the upper strata vanadium oxide film.Obtain low transformation temperature by mixing, the element that mixes is tungsten, and doping content is 4%.The control sputtering power is 150W during sputter, and partial pressure of oxygen is 5%, and sputtering time is 15min, the about 20nm of film thickness, and annealing temperature is 350 ℃.The preparation vanadium oxide film resistance with the variation of temperature curve as shown in Figure 3, the phase transition temperature of film is 50 ℃.
Claims (10)
1. infrared-Terahertz two waveband detector array micro-bridge structure, it is characterized in that, comprise substrate (10), drive circuit (20), sacrifice layer (30), described drive circuit is arranged on the substrate (10), and this drive circuit (20) is provided with circuit interface (21); Described sacrifice layer (30) preparation has on the substrate of drive circuit at this, and from bottom to top preparing successively on drive circuit has cushion (40), supporting layer (50), top electrodes (60), and this top electrodes is connected with described circuit interface; On this top electrodes and supporting layer, from bottom to top prepare successively lower floor's vanadium oxide film and upper strata vanadium oxide film are arranged.
According to claim 1 infrared-Terahertz two waveband detector array micro-bridge structure, it is characterized in that described lower floor vanadium oxide film is the no phase transformation vanadium oxide film with high temperature coefficient of resistance, make infrared and sensitive layer terahertz wave band.
According to claim 1 infrared-Terahertz two waveband detector array micro-bridge structure, it is characterized in that, the reversible transition of semiconductor phase-metal phase can take place in described upper strata vanadium oxide film, for the semiconductor phase time is used as infrared absorption layer with lower floor's vanadium oxide film; For metal is made the terahertz emission absorbed layer after mutually.
According to claim 1 to 3 arbitrary described infrared-Terahertz two waveband detector array micro-bridge structure, it is characterized in that the phase transition temperature of described upper strata vanadium oxide film is 20 ~ 60 ℃, thickness is 5 ~ 100nm; The temperature-coefficient of electrical resistance Wei – 2%/K ~ – 6%/K of described lower floor vanadium oxide film, thickness is 30 ~ 200nm.
According to claim 1 infrared-Terahertz two waveband detector array micro-bridge structure, it is characterized in that after described sacrifice layer discharged, the position of former sacrifice layer formed resonator, this resonator height is 1.5 ~ 3 μ m; Described sacrificial layer material is a kind of in the porous silicon of polyimides, silica, oxidation and the phosphorosilicate glass.
According to claim 1 infrared-Terahertz two waveband detector array micro-bridge structure, it is characterized in that, described supporting layer is made of single thin film or is made of plural layers, and material is silica or silicon nitride, and the thickness of supporting layer is between 0.1 ~ 1 μ m.
According to claim 1 infrared-Terahertz two waveband detector array micro-bridge structure, it is characterized in that described cushioning layer material is metal or metal alloy or nonmetallic materials; Described top electrodes layer material is aluminium, tungsten, titanium, platinum, nickel, chromium or any their alloy.
According to claim 1 infrared-preparation method of Terahertz two waveband detector array micro-bridge structure, it is characterized in that, may further comprise the steps:
1. at the substrate growth sacrifice layer that has drive circuit and graphical, make the section configuration of sacrifice layer pattern edge present the trapezoid shape, expose the circuit interface of drive circuit;
2. the substrate at existing sacrifice layer pattern prepares the cushion pattern;
3. step 2. the device of gained prepare supporting layer, and form the supporting layer pattern with photoetching process, expose electrode interface;
4. step 3. the device of gained prepare top electrode layer, and form the top electrodes layer pattern with photoetching process, require top electrode layer to be electrically connected with electrode interface;
5. in the substrate preparation for preparing top electrode layer as lower floor's vanadium oxide film of sensitive layer and it is graphical;
6. preparation has the upper strata vanadium oxide film of low transformation temperature and it is graphical;
7. releasing sacrificial layer forms micro-bridge structure, encapsulates the formation probe unit then.
According to claim 8 infrared-preparation method of Terahertz two waveband detector array micro-bridge structure, it is characterized in that, adopt the magnetron sputtering method preparation as lower floor's vanadium oxide film of sensitive layer; The control sputtering power is 100 ~ 500W during sputter, and partial pressure of oxygen is 0.5% ~ 10%, and sputtering time is 5 ~ 60min, and annealing temperature is 200 ~ 600 ℃.
According to claim 8 infrared-preparation method of Terahertz two waveband detector array micro-bridge structure, it is characterized in that the upper strata vanadium oxide film with low transformation temperature adopts the magnetron sputtering method preparation; Doping elements is titanium, molybdenum, tungsten etc. during preparation, and doping content is 0.1 ~ 10%; The control sputtering power is 50 ~ 300W, and partial pressure of oxygen is 0.5% ~ 8%, and sputtering time is 2 ~ 30min, and annealing temperature is 200 ~ 600 ℃.
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