CN103745914A - Growth method of strained layer and substrate with strained layer - Google Patents
Growth method of strained layer and substrate with strained layer Download PDFInfo
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- CN103745914A CN103745914A CN201310720840.0A CN201310720840A CN103745914A CN 103745914 A CN103745914 A CN 103745914A CN 201310720840 A CN201310720840 A CN 201310720840A CN 103745914 A CN103745914 A CN 103745914A
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- H10N99/03—Devices using Mott metal-insulator transition, e.g. field effect transistors
Abstract
The invention provides a growth method of a strained layer and a substrate with the strained layer. The method comprises the following steps: the substrate, which contains a supporting layer, a buried layer and a top semiconductor layer, is provided; a cut-through corrosion window is formed in the top semiconductor layer and the buried layer; the buried layer is corroded through the corrosion window so as to suspend part of the top semiconductor layer in the air; putting the substrate at a first temperature, and a bridge strip is formed at the corrosion window of the top semiconductor layer, wherein the bridge strip is prepared from a metal-insulator phase-change material; the temperature of the bridge strip is changed to a second temperature. Thus, strain occurs to the suspended top semiconductor layer. The invention has advantages as follows: by the metal-insulator phase-change phenomenon, obvious size change characteristic is introduced at a specific phase-change temperature, and enough strain is introduced through the bridge strip. The method provided by the invention is a low-cost and efficient method.
Description
Technical field
The present invention relates to field of semiconductor materials, relate in particular to a kind of growing method of strained layer and with the substrate of strained layer.
Background technology
The high speed development of microelectric technique makes Moore's Law more and more approach its physics limit, and silicon based opto-electronics is integrated in the extension that is considered in recent years effectively to solve Moore's Law.At present, hindering the integrated major obstacle of silicon based opto-electronics is how to solve silica-based and cmos compatible light source problem.Therefore, find a kind of can with silica-based technique mutually compatible effective luminescent material be the integrated important place of silicon based opto-electronics.
The about 2%(of tensile stress in Ge film is when Ge is highly doped, the tensile stress needing is less), can be direct band gap by original indirect band gap transitions, met the integrated material requirements of silicon based opto-electronics, therefore can be used for making silicon substrate laser, thereby for the integrated approach that provides of photoelectricity is provided on low-cost sheet.
The method of preparing tensile stress Ge film mainly contains several: 1, utilize the difference of Ge and Si thermal coefficient of expansion, process the Ge film that obtains tensile strain by direct heat, but the degree of the strain Ge that this method obtains is little, only ~ 0.3%; 2, utilize III-V compounds of group as resilient coating, can obtain the strain Ge of large stress, but due to the material require MBE of extension III-V family or MOCVD, expensive, the speed of growth is slow, thereby has increased cost.
Summary of the invention
Technical problem to be solved by this invention is, a kind of growing method of strained layer is provided and with the substrate of strained layer, can obtains larger strain with lower cost.
In order to address the above problem, the invention provides a kind of growing method of strained layer, comprise the steps: to provide substrate, described substrate comprises supporting layer, the top-layer semiconductor on the buried regions of support layer surface and buried regions surface; In top-layer semiconductor and buried regions, form the corrosion window connecting; By corrosion window, corrode buried regions, so that top-layer semiconductor part is unsettled; Described substrate is placed at the first temperature, corrosion window place in top-layer semiconductor forms bridge connector, one end of described bridge connector is connected with the surface of top-layer semiconductor overhanging portion, opposite flank in corrosion window is connected the other end with overhanging portion, and described bridge connector adopts metal-insulator phase transition material to make; Change temperature to the second temperature of described bridge connector, make described bridge connector inside metal-insulator phase transition occur and shrink or stretch, thereby make unsettled top-layer semiconductor generation strain.
Optionally, the material of described top-layer semiconductor is selected from any one in germanium, silicon and III-V compound semiconductor.
Optionally, the material of described bridge connector is vanadium dioxide.
Optionally, the step of described bridge connector to the second temperature of described change, is further to adopt the mode that improves ambient temperature.
Optionally, the step of described bridge connector to the second temperature of described change, is further to adopt to passing into electric current in bridge connector to make the mode of its heating with rising temperature.
Optionally, the step of described formation bridge connector further comprises: in corrosion window, form packed layer, with the surface of top-layer semiconductor described in planarization; Surface in top-layer semiconductor forms bridge connector; Remove packed layer.
Optionally, the technique of described formation bridge connector is further selected from any one in physical deposition and chemical deposition.
The present invention further provides a kind of substrate with strained layer, comprise supporting layer, the top-layer semiconductor on the buried regions of support layer surface and buried regions surface, in described top-layer semiconductor and buried regions, there is the window of a perforation, the buried regions of described window one side caves in so that top-layer semiconductor is unsettled, window place in top-layer semiconductor arranges a bridge connector, one end of described bridge connector is connected with the surface of top-layer semiconductor overhanging portion, opposite flank in window is connected the other end with overhanging portion, and described bridge connector adopts metal-insulator phase transition material to make.
Optionally, the material of described top-layer semiconductor is selected from any one in germanium, silicon and III-V compound semiconductor.
Optionally, the material of described bridge connector is vanadium dioxide.
The invention has the advantages that, utilize metal-insulator phase transition phenomenon can under a certain specific phase transition temperature, introduce the characteristic that obvious size changes, by bridge connector, introduce enough adaptabilitys to changes, is a kind of low cost and method efficiently.
Accompanying drawing explanation
It shown in accompanying drawing 1, is the implementation step schematic diagram of embodiment of the present invention.
Accompanying drawing 2A is to shown in accompanying drawing 2G being the process schematic representation of embodiment of the present invention.
Shown in accompanying drawing 3, be the metal-semiconductor phase-change characteristic figure of vanadium oxide material.
Embodiment
Below in conjunction with accompanying drawing, to the growing method of a kind of strained layer provided by the invention and with the embodiment of the substrate of strained layer, elaborate.
Shown in accompanying drawing 1, be the implementation step schematic diagram of embodiment of the present invention, comprise: step S100, substrate is provided, described substrate comprises supporting layer, the top-layer semiconductor on the buried regions of support layer surface and buried regions surface; Step S110 forms the corrosion window connecting in top-layer semiconductor and buried regions; Step S120, corrodes buried regions by corrosion window, so that top-layer semiconductor part is unsettled; Step S131 forms packed layer in corrosion window, with the surface of top-layer semiconductor described in planarization; Step S132, is placed in described substrate at the first temperature, on the surface of top-layer semiconductor, forms bridge connector; Step S133, removes packed layer; Step S140, changes temperature to the second temperature of described bridge connector, makes described bridge connector generation metal-semiconductor phase transformation and shrinks or stretch, thereby making unsettled top-layer semiconductor generation strain.
Accompanying drawing 2A is to shown in accompanying drawing 2G being the process schematic representation of embodiment of the present invention.
Shown in accompanying drawing 2A, refer step S100, provides substrate 200, and described substrate comprises supporting layer 201, the buried regions 202 on supporting layer 201 surfaces, and the top-layer semiconductor 203 on buried regions 202 surfaces.The material of described supporting layer 201 can be any one the common backing material that comprises the materials such as monocrystalline silicon and sapphire.The material of described top-layer semiconductor 203 is selected from any one in germanium, silicon and III-V compound semiconductor.The material of described buried regions 202 should select and top-layer semiconductor 203 between have and corrode optionally material, such as being silica or silicon nitride etc.
Shown in accompanying drawing 2B, refer step S110 forms the corrosion window 210 connecting in top-layer semiconductor 203 and buried regions 202.The method that forms corrosion window 210 can comprise the steps: to form graphical corrosion barrier layer on the surface of top-layer semiconductor 203; By patterned corrosion barrier layer, top-layer semiconductor 203 and buried regions 202 are implemented to dry etching to form corrosion window 210.
Shown in accompanying drawing 2C, refer step S120, by corrosion window 210 corrosion buried regions 202, so that top-layer semiconductor 203 parts are unsettled.Corrosion herein should take buried regions 202 to have the selective corrosion method of higher corrosion rate, for top-layer semiconductor 203, be for example monocrystalline silicon or monocrystalline germanium, and buried regions 202 is the execution mode of silica or silicon nitride, can adopt hydrofluoric acid to corrode as corrosive liquid.This embodiment take that the one-sided top-layer semiconductor 203 of corrosion window 210 is unsettled to be narrated as example, for the part without unsettled, can adopt the materials such as photoresist to cover to form and stop.In other embodiment, also can make the top-layer semiconductor 203 of two opposite sides of corrosion window 210 all unsettled.
Shown in accompanying drawing 2D, refer step S131 forms packed layer 220 in corrosion window 210, with the surface of top-layer semiconductor described in planarization 203.The material of described packed layer 220 can be for example photoresist, can be also the materials such as silica or silicon nitride.
Shown in accompanying drawing 2E, refer step S132, described substrate 200 is placed at the first temperature, surface in top-layer semiconductor 203 forms bridge connector 230, one end of described bridge connector 230 is connected with the surface of top-layer semiconductor 203 overhanging portions, and the other end is connected with the opposite flank of overhanging portion in corrosion window 210.The technique of described formation bridge connector 230 is further selected from sol-gel process, any one in physical deposition and chemical deposition.What this technique formed is continuous film, needs through graphically have the bridge connector 230 of reservation shape with formation.
Shown in accompanying drawing 2F, refer step S133, removes packed layer 220.Can dissolve or corrode by the gap (perpendicular to page, not shown) between bridge connector 230 both sides and corrosion window 210, to remove packed layer 220.
Shown in accompanying drawing 2G, refer step S140, changes temperature to the second temperature of described bridge connector 230, makes described bridge connector 230 metal-insulator phase transitions occur and stretch or shrinks, thereby makes the 203 generation strains of unsettled top-layer semiconductor.Material conventionally all can expand or shrink the in the situation that of temperature change, and therefore simple dependence coefficient of thermal expansion differences is in top-layer semiconductor 203, to introduce enough stress.Metal-insulator phase transition can be introduced obvious size and change under a certain specific phase transition temperature, therefore can introduce enough adaptabilitys to changes.
This embodiment be take vanadium dioxide and is explained its effect as example.Shown in accompanying drawing 3, be the metal-semiconductor phase-change characteristic figure of vanadium oxide material.From phasor, can find out, M1 makes the axially upper contraction ~ 1% of CR of material to the transformation of R phase, and expands on other both directions; From M1 to M2 phase, material extends ~ 1% in CR direction.So from M2 to R phase, material shrinks ~ 2% in CR direction.Vanadium oxide material phase transition temperature occurs near 68 degrees Celsius, relatively approaches room temperature, and the variation of phase variable volume is than the high several orders of magnitude of general inorganic matter driver, and higher than the variation of piezoelectric volume, is therefore a kind of preferred material.
The accompanying drawing 2G of this embodiment be take top-layer semiconductor 203 and is stretched and introduces tensile stress as example.If the material of bridge connector 230 is vanadium dioxide, the first temperature should be lower than 68 degrees Celsius, and the second temperature should be higher than 68 degrees Celsius.In other embodiment, should be according to different materials, and need in top-layer semiconductor 203, obtain tensile stress or compression is determined the first different temperature values and the second temperature value.
Above-mentioned steps has obtained a kind of substrate 200 with strained layer after implementing, and comprises supporting layer 201, the top-layer semiconductor 203 on the buried regions 202 on supporting layer 201 surfaces and buried regions 202 surfaces.The window 210 in described top-layer semiconductor 203 and buried regions 202 with a perforation, the buried regions 202 of described window 210 1 sides caves in so that 203 layers of top layer semiconductors are unsettled.At the window place of top-layer semiconductor 203, a bridge connector 230 is set, one end of described bridge connector 230 is connected with the surface of top-layer semiconductor 203 overhanging portions, the other end is connected with the opposite flank of overhanging portion in window 210, and described bridge connector 230 adopts metal-insulator phase transition material to make.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (10)
1. a growing method for strained layer, is characterized in that, comprises the steps:
Substrate is provided, and described substrate comprises supporting layer, the top-layer semiconductor on the buried regions of support layer surface and buried regions surface;
In top-layer semiconductor and buried regions, form the corrosion window connecting;
By corrosion window, corrode buried regions, so that top-layer semiconductor part is unsettled;
Described substrate is placed at the first temperature, corrosion window place in top-layer semiconductor forms bridge connector, one end of described bridge connector is connected with the surface of top-layer semiconductor overhanging portion, opposite flank in corrosion window is connected the other end with overhanging portion, and described bridge connector adopts metal-insulator phase transition material to make;
Change temperature to the second temperature of described bridge connector, make described bridge connector inside metal-insulator phase transition occur and shrink or stretch, thereby make unsettled top-layer semiconductor generation strain.
2. the growing method of strained layer according to claim 1, is characterized in that, the material of described top-layer semiconductor is selected from any one in germanium, silicon and III-V compound semiconductor.
3. the growing method of strained layer according to claim 1, is characterized in that, the material of described bridge connector is vanadium dioxide.
4. the growing method of strained layer according to claim 1, is characterized in that, the step of described bridge connector to the second temperature of described change is further to adopt the mode that improves ambient temperature.
5. the growing method of strained layer according to claim 1, is characterized in that, the step of described bridge connector to the second temperature of described change is further to adopt to passing into electric current in bridge connector to make the mode of its heating with rising temperature.
6. the growing method of strained layer according to claim 1, is characterized in that, the step of described formation bridge connector further comprises:
In corrosion window, form packed layer, with the surface of top-layer semiconductor described in planarization;
Surface in top-layer semiconductor forms bridge connector;
Remove packed layer.
7. the growing method of strained layer according to claim 5, is characterized in that, the technique of described formation bridge connector is further selected from any one in physical deposition and chemical deposition.
8. the substrate with strained layer, comprise supporting layer, the top-layer semiconductor on the buried regions of support layer surface and buried regions surface, it is characterized in that, in described top-layer semiconductor and buried regions, there is the window of a perforation, the buried regions of described window one side caves in so that top-layer semiconductor is unsettled, window place in top-layer semiconductor arranges a bridge connector, one end of described bridge connector is connected with the surface of top-layer semiconductor overhanging portion, opposite flank in window is connected the other end with overhanging portion, and described bridge connector adopts metal-insulator phase transition material to make.
9. the substrate with strained layer according to claim 8, is characterized in that, the material of described top-layer semiconductor is selected from any one in germanium, silicon and III-V compound semiconductor.
10. the substrate with strained layer according to claim 8, is characterized in that, the material of described bridge connector is vanadium dioxide.
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| CN201310720840.0A CN103745914B (en) | 2013-12-24 | 2013-12-24 | The growing method of strained layer and the substrate with strained layer |
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| CN201310720840.0A CN103745914B (en) | 2013-12-24 | 2013-12-24 | The growing method of strained layer and the substrate with strained layer |
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Citations (5)
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|---|---|---|---|---|
| CN1851900A (en) * | 2006-03-30 | 2006-10-25 | 上海理工大学 | Making method of adopting phase-change to realizing strain silicon on insulator |
| CN101174671A (en) * | 2007-10-18 | 2008-05-07 | 天津大学 | Production method for vanadium dioxide nano thin film with phase-change characteristic |
| JP2008203102A (en) * | 2007-02-20 | 2008-09-04 | Osaka Univ | Method for manufacturing cantilever beam and force sensor |
| CN102556937A (en) * | 2011-12-30 | 2012-07-11 | 上海新傲科技股份有限公司 | Strained germanium device with cantilever structure and preparation method thereof |
| CN103193190A (en) * | 2013-04-11 | 2013-07-10 | 电子科技大学 | Infrared-terahertz dual-band array detector microbridge structure and production method thereof |
-
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- 2013-12-24 CN CN201310720840.0A patent/CN103745914B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1851900A (en) * | 2006-03-30 | 2006-10-25 | 上海理工大学 | Making method of adopting phase-change to realizing strain silicon on insulator |
| JP2008203102A (en) * | 2007-02-20 | 2008-09-04 | Osaka Univ | Method for manufacturing cantilever beam and force sensor |
| CN101174671A (en) * | 2007-10-18 | 2008-05-07 | 天津大学 | Production method for vanadium dioxide nano thin film with phase-change characteristic |
| CN102556937A (en) * | 2011-12-30 | 2012-07-11 | 上海新傲科技股份有限公司 | Strained germanium device with cantilever structure and preparation method thereof |
| CN103193190A (en) * | 2013-04-11 | 2013-07-10 | 电子科技大学 | Infrared-terahertz dual-band array detector microbridge structure and production method thereof |
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