CN106395728A - Micro-bridge structure Mn-Co-Ni-O thin film infrared detector and preparation method thereof - Google Patents
Micro-bridge structure Mn-Co-Ni-O thin film infrared detector and preparation method thereof Download PDFInfo
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- CN106395728A CN106395728A CN201610893671.4A CN201610893671A CN106395728A CN 106395728 A CN106395728 A CN 106395728A CN 201610893671 A CN201610893671 A CN 201610893671A CN 106395728 A CN106395728 A CN 106395728A
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- manganese cobalt
- cobalt nickel
- nickel oxygen
- polyimides
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- 239000010409 thin film Substances 0.000 title claims abstract description 14
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 229910018553 Ni—O Inorganic materials 0.000 title abstract 4
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- 229920001721 polyimide Polymers 0.000 claims description 35
- 239000004642 Polyimide Substances 0.000 claims description 32
- YQOXCVSNNFQMLM-UHFFFAOYSA-N [Mn].[Ni]=O.[Co] Chemical compound [Mn].[Ni]=O.[Co] YQOXCVSNNFQMLM-UHFFFAOYSA-N 0.000 claims description 30
- 239000010408 film Substances 0.000 claims description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 25
- 238000011161 development Methods 0.000 claims description 15
- 238000000137 annealing Methods 0.000 claims description 13
- 235000012239 silicon dioxide Nutrition 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 238000001259 photo etching Methods 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 238000000354 decomposition reaction Methods 0.000 claims description 5
- 238000002309 gasification Methods 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 5
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910003978 SiClx Inorganic materials 0.000 claims description 2
- 150000003949 imides Chemical class 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- MZZUATUOLXMCEY-UHFFFAOYSA-N cobalt manganese Chemical compound [Mn].[Co] MZZUATUOLXMCEY-UHFFFAOYSA-N 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 7
- 238000002161 passivation Methods 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000001514 detection method Methods 0.000 abstract 1
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 239000003973 paint Substances 0.000 abstract 1
- 230000018109 developmental process Effects 0.000 description 12
- 238000007747 plating Methods 0.000 description 5
- -1 DEG C Acid imide Chemical class 0.000 description 3
- 238000005576 amination reaction Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 230000004043 responsiveness Effects 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 241000790917 Dioxys <bee> Species 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B1/00—Devices without movable or flexible elements, e.g. microcapillary devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
- B81C1/00468—Releasing structures
- B81C1/00476—Releasing structures removing a sacrificial layer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The invention discloses a micro-bridge structure Mn-Co-Ni-O thin film infrared detector and a preparation method thereof. A micro-bridge structure of the detector is a platform. A Mn-Co-Ni-O thin film material is deposited on the platform to prepare the infrared detector. A sacrificial layer of the micro-bridge structure is eliminated in a direct heating mode without depositing a passivation layer on a Mn-Co-Ni-O detection element. The sacrificial layer can form an arched support structure in the internal part. A preparation process is simplified. The cost is saved. A device preparation success rate can be improved. Moreover, the structure strength of the platform is relatively high. The platform is not liable to damage in black paint coating and packaging steps of the infrared element.
Description
Technical field
Patent of the present invention is related to Infrared Detectorss, specifically a kind of infrared detector with micro-bridge structure part and preparation method thereof.
Background technology
Excellent negative temperature resistance characteristic is had with the non-refrigeration type infrared detector that manganese cobalt nickel oxygen film material makes,
Have passed through the research and development of decades, its performance is greatly improved.Reduction due to thin-film material thickness can make infrared letter
Number absorption weaken, so typically adopting japanning to increase INFRARED ABSORPTION in technique；The reduction of thin-film material thickness also leads to visit
The thermal capacitance surveying unit reduces, so that its response time becomes big, responsiveness reduces, and therefore, should reduce the heat conductivity of thin-film material
To keep response sensitivity, increase responsiveness simultaneously.
It is used on Infrared Detectorss as the micro-bridge structure of substrate using low-resistance silicon and can reduce thermal conductivity, improve infrared signal
Absorbance, the sensitivity for manganese cobalt nickel oxygen film material Infrared Detectorss and the raising of detectivity play an important role.In microbridge
In the manufacturing process of structure, need detecting one layer of passivation layer of deposition in unit with PECVD, to carry out reactive ion etching,
Expose sacrifice layer.Removal for sacrifice layer often selects oxygen plasma dry etching, easily causes plasma-induced damage
Wound, and be difficult to make the micro-bridge structure of high-aspect-ratio；And the reactive ion etching of slab construction is due to adopting high-energy ion bombardment
Physical etchings, chemical isotropic is poor.
The preparation method of the microbridge infrared detector that this patent is related to, can improve the intensity of microbridge, so as to spy
Survey first japanning, carry out being unlikely to damage micro-bridge structure during device encapsulation；It is at the same time it can also simplify Making programme, cost-effective,
Improve the success rate of element manufacturing.
Content of the invention
The present invention is to make a kind of infrared detector with micro-bridge structure and preparation method thereof, detects first material and adopts manganese cobalt nickel
Oxygen thin film.The sacrifice layer of the micro-bridge structure of this patent design can internally form the supporting construction of arch, improves microbridge knot
The intensity of structure is so as to can be compatible with the processing technology of manganese cobalt nickel oxygen film Infrared Detectorss, and efficiently solves film type
The low problem of the response time length of Infrared Detectorss, responsiveness.
A kind of structure chart of infrared detector with micro-bridge structure is as shown in Figure 1, Figure 2 and Fig. 3.It includes manganese cobalt nickel oxygen film 1, dioxy
SiClx layer 2, silicon nitride layer 3, polyimide sacrificial layer 4 and low-resistance silicon substrate 5；Described Infrared Detectorss are from low-resistance silicon substrate 5
On be followed successively by polyimide sacrificial layer 4, silicon nitride layer 3, silicon dioxide layer 2 and manganese cobalt nickel oxygen film 1, in manganese cobalt nickel oxygen film
There are chromium and golden clad metal electrode 6 on 1；Wherein：
Described polyimide sacrificial layer 4 is domed sacrifice layer, and dome height is 1-3 μm, and sacrificial layer thickness is 1-3
μm, sacrifice layer and silicon dioxide flat contact；
The thickness 50-500nm of described silicon nitride layer 3；
Described, the thickness 50-500nm of silicon dioxide layer 2；
0.1-2 μm of the thickness of described manganese cobalt nickel oxygen film 1.
Micro-bridge structure panel detector structure designed by the present invention is realized by processing step in detail below：
1) a strata imide membrane (PI) is precipitated on low resistance silicon chip as sacrifice layer, sacrificial layer thickness is 1-3 μm；
2) under nitrogen atmosphere protection, imidization process is carried out to polyimides；
3) to polyimides exposure, development, produce polyimides platform；
4) first deposit one layer of silicon nitride using PECVD, redeposited layer of silicon dioxide is as structure sheaf；
5) adopt certain method to deposit certain thickness manganese cobalt nickel oxygen film, and thin film is made annealing treatment；
6) photoetching, burn into development treatment are carried out to the manganese cobalt nickel oxygen film after annealing, polyimides platform is produced
Manganese cobalt nickel oxygen film detects unit；
7) adopt photoetching, development treatment, produce the photoresist of the electrode shape at cloudy quarter, using the plating of double ion sputtering method
Chrome gold electrode, thickness is respectively 30nm, 150nm；
8) wash away photoresist with acetone, whole device is put into heating in quick anneal oven, heating-up temperature is in 400-800
DEG C, make polyimides decomposition gasification, remove polyimides.
The advantage of this patent is：Remove polyimide sacrificial layer by device is placed on to anneal in quick anneal oven,
Can avoid precipitating passivation layer, thus reducing the follow-up step such as photoetching, reactive ion etching, simplify Making programme, saving into
This；Meanwhile, the shape of micro-bridge structure can improve its intensity, for keeping when detecting first japanning, carrying out device encapsulation
Certain intensity and be not destroyed, improve element manufacturing success rate.
Brief description
Fig. 1 is the profile of the infrared detector with micro-bridge structure part structure before heating sacrifice layer, in figure：1st, manganese cobalt nickel oxygen is thin
Film, 2, silicon dioxide layer, 3, silicon nitride layer, 4, polyimide sacrificial layer, 5, low-resistance silicon substrate.
Fig. 2 is the profile of the microbridge infrared device structure after directly heating sacrifice layer.After heating, sacrifice layer is put down in microbridge
Platform is internally formed domes.
Fig. 3 is the top view plating microbridge infrared device structure after electrode, in figure：6：Chromium and golden clad metal electrode.
Specific embodiment
Below in conjunction with accompanying drawing, by instantiation, this patent is described in further details, but the protection domain of this patent
It is not limited to following instance.
Embodiment 1：
1 precipitates one layer of photosensitive polyimide film (ZKPI) as sacrifice layer in low resistance silicon chip, and the speed of sol evenning machine is adjusted
3000 turns, 20 seconds of system, the sacrificial layer thickness of institute's spin coating is 1 μm.
The 2 pairs of polyimides under nitrogen atmosphere protection respectively at 150 DEG C, 180 DEG C, 250 DEG C insulation 60 minutes so as to sub-
Amination.
3 pairs of polyimides exposures, developments, produce 70 × 70 μm2Platform.
4 first deposit the silicon nitride of one layer of 50nm, the silicon dioxide of redeposited one layer of 50nm using PECVD.
5 sputter, using magnetron sputtering method, the manganese cobalt nickel oxygen film that a layer thickness is 100nm, and thin film are carried out annealing treatment
Reason, annealing temperature is 200 DEG C, 5 minutes.
Manganese cobalt nickel oxygen film after 6 pairs of annealing carries out photoetching, burn into development treatment, produces on polyimides platform
50×50μm2Manganese cobalt nickel oxygen film detect unit.
7 adopt photoetching, development treatment, produce the photoresist of the electrode shape at cloudy quarter, using double ion sputtering method chromium plating/
Gold electrode, thickness is respectively 30nm, 150nm.
8 wash away photoresist with acetone, and whole device is put in quick anneal oven, heat 10 minutes, make to gather at 400 DEG C
Acid imide decomposition gasification, removes polyimides.
Embodiment 2：
1 precipitates one layer of photosensitive polyimide film (ZKPI) as sacrifice layer in low resistance silicon chip, and the speed of sol evenning machine is adjusted
3000 turns, 20 seconds of system, the sacrificial layer thickness of institute's spin coating is 2 μm.
The 2 pairs of polyimides under nitrogen atmosphere protection respectively at 150 DEG C, 180 DEG C, 250 DEG C insulation 60 minutes so as to sub-
Amination.
3 pairs of polyimides exposures, developments, produce 70 × 70 μm2Platform.
4 first deposit the silicon nitride of one layer of 200nm, the silicon dioxide of redeposited one layer of 200nm using PECVD.
5 sputter, using magnetron sputtering method, the manganese cobalt nickel oxygen film that a layer thickness is 700nm, and thin film are carried out annealing treatment
Reason, annealing temperature is 200 DEG C, 5 minutes.
Manganese cobalt nickel oxygen film after 6 pairs of annealing carries out photoetching, burn into development treatment, produces on polyimides platform
50×50μm2Manganese cobalt nickel oxygen film detect unit.
7 adopt photoetching, development treatment, produce the photoresist of the electrode shape at cloudy quarter, using double ion sputtering method chromium plating/
Gold electrode, thickness is respectively 30nm, 150nm.
8 wash away photoresist with acetone, and whole device is put in quick anneal oven, heat 10 minutes, make to gather at 500 DEG C
Acid imide decomposition gasification, removes polyimides.
Embodiment 3：
1 precipitates one layer of photosensitive polyimide film (ZKPI) as sacrifice layer in low resistance silicon chip, and the speed of sol evenning machine is adjusted
3000 turns, 20 seconds of system, the sacrificial layer thickness of institute's spin coating is 3 μm.
The 2 pairs of polyimides under nitrogen atmosphere protection respectively at 150 DEG C, 180 DEG C, 250 DEG C insulation 60 minutes so as to sub-
Amination.
3 pairs of polyimides exposures, developments, produce 70 × 70 μm2Platform.
4 first deposit the silicon nitride of one layer of 500nm, the silicon dioxide of redeposited one layer of 500nm using PECVD.
5 sputter, using magnetron sputtering method, the manganese cobalt nickel oxygen film that a layer thickness is 2 μm, and thin film is made annealing treatment,
Annealing temperature is 200 DEG C, 5 minutes.
Manganese cobalt nickel oxygen film after 6 pairs of annealing carries out photoetching, burn into development treatment, produces on polyimides platform
50×50μm2Manganese cobalt nickel oxygen film detect unit.
7 adopt photoetching, development treatment, produce the photoresist of the electrode shape at cloudy quarter, using double ion sputtering method chromium plating/
Gold electrode, thickness is respectively 30nm, 150nm.
8 wash away photoresist with acetone, and whole device is put in quick anneal oven, heat 10 minutes, make to gather at 800 DEG C
Acid imide decomposition gasification, removes polyimides.
Claims (2)
1. a kind of micro-bridge structure manganese cobalt nickel oxygen film Infrared Detectorss, including manganese cobalt nickel oxygen film (1), silicon dioxide layer (2), nitrogen
SiClx layer (3), polyimide sacrificial layer (4) and low-resistance silicon substrate (5)；It is characterized in that：
Described Infrared Detectorss be followed successively by from low-resistance silicon substrate (5) polyimide sacrificial layer (4), silicon nitride layer (3), two
Silicon oxide layer (2) and manganese cobalt nickel oxygen film (1), have chromium and golden clad metal electrode (6) in manganese cobalt nickel oxygen film (1)；
Described polyimide sacrificial layer (4) is domed sacrifice layer, and dome height is 1-3 μm, and sacrificial layer thickness is 1-3 μ
M, sacrifice layer and silicon dioxide flat contact；
The thickness 50-500nm of described silicon nitride layer (3)；
Described, the thickness 50-500nm of silicon dioxide layer (2)；
0.1-2 μm of the thickness of described manganese cobalt nickel oxygen film (1).
2. a kind of prepare a kind of method of micro-bridge structure manganese cobalt nickel oxygen film Infrared Detectorss as claimed in claim 1, it is special
Levy and be that method and step is as follows：
1) a strata imide membrane (PI) is precipitated on low resistance silicon chip as sacrifice layer, sacrificial layer thickness is 1-3 μm；
2) under nitrogen atmosphere protection, imidization process is carried out to polyimides；
3) to polyimides exposure, development, produce polyimides platform；
4) first deposit one layer of silicon nitride using PECVD, redeposited layer of silicon dioxide is as structure sheaf；
5) adopt certain method to deposit certain thickness manganese cobalt nickel oxygen film, and thin film is made annealing treatment；
6) photoetching, burn into development treatment are carried out to the manganese cobalt nickel oxygen film after annealing, manganese cobalt is produced on polyimides platform
Nickel oxygen thin film detects unit；
7) adopt photoetching, development treatment, produce the photoresist of the electrode shape at cloudy quarter, chrome gold is plated using double ion sputtering method
Electrode, thickness is respectively 30nm, 150nm；
8) wash away photoresist with acetone, whole device is put into heating in quick anneal oven, heating-up temperature, at 400-800 DEG C, makes
Polyimides decomposition gasification, removes polyimides.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610538776.8A CN106044696A (en) | 2016-07-11 | 2016-07-11 | Infrared detector with micro-bridge structure made of manganese-cobalt-nickel-oxygen film and manufacturing method thereof |
| CN2016105387768 | 2016-07-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106395728A true CN106395728A (en) | 2017-02-15 |
| CN106395728B CN106395728B (en) | 2017-08-25 |
Family
ID=57186561
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610538776.8A Pending CN106044696A (en) | 2016-07-11 | 2016-07-11 | Infrared detector with micro-bridge structure made of manganese-cobalt-nickel-oxygen film and manufacturing method thereof |
| CN201610893671.4A Active CN106395728B (en) | 2016-07-11 | 2016-10-13 | A kind of micro-bridge structure manganese cobalt nickel oxygen film infrared detector and preparation method thereof |
| CN201621119724.9U Withdrawn - After Issue CN206142814U (en) | 2016-07-11 | 2016-10-13 | Microbridge structure manganese cobalt nickel oxygen film infrared detector |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610538776.8A Pending CN106044696A (en) | 2016-07-11 | 2016-07-11 | Infrared detector with micro-bridge structure made of manganese-cobalt-nickel-oxygen film and manufacturing method thereof |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201621119724.9U Withdrawn - After Issue CN206142814U (en) | 2016-07-11 | 2016-10-13 | Microbridge structure manganese cobalt nickel oxygen film infrared detector |
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| CN (3) | CN106044696A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109238475A (en) * | 2018-08-20 | 2019-01-18 | 中国科学院上海技术物理研究所 | There are the manganese cobalt nickel oxygen thermistor detector and method of bent support leg micro-bridge structure |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106044696A (en) * | 2016-07-11 | 2016-10-26 | 中国科学院上海技术物理研究所 | Infrared detector with micro-bridge structure made of manganese-cobalt-nickel-oxygen film and manufacturing method thereof |
| CN110672211B (en) * | 2019-09-11 | 2020-11-20 | 中国科学院上海技术物理研究所 | Nano-gold modified non-refrigeration infrared detector and manufacturing method thereof |
| CN110793648A (en) * | 2019-11-11 | 2020-02-14 | 中国科学院上海技术物理研究所 | Aerogel heat insulation structure broadband infrared detector and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101298313A (en) * | 2008-05-30 | 2008-11-05 | 中国科学院上海技术物理研究所 | Technological process for quickly releasing edge millimeter-level large area film |
| US20090278217A1 (en) * | 2006-03-20 | 2009-11-12 | Richard Ian Laming | Mems device |
| CN102732848A (en) * | 2012-06-25 | 2012-10-17 | 中国科学院上海技术物理研究所 | Method for preparing single oriented manganese cobalt nickel oxygen film by magnetron sputtering |
| CN103193190A (en) * | 2013-04-11 | 2013-07-10 | 电子科技大学 | Infrared-terahertz dual-band array detector microbridge structure and production method thereof |
| CN206142814U (en) * | 2016-07-11 | 2017-05-03 | 中国科学院上海技术物理研究所 | Microbridge structure manganese cobalt nickel oxygen film infrared detector |
-
2016
- 2016-07-11 CN CN201610538776.8A patent/CN106044696A/en active Pending
- 2016-10-13 CN CN201610893671.4A patent/CN106395728B/en active Active
- 2016-10-13 CN CN201621119724.9U patent/CN206142814U/en not_active Withdrawn - After Issue
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090278217A1 (en) * | 2006-03-20 | 2009-11-12 | Richard Ian Laming | Mems device |
| CN101298313A (en) * | 2008-05-30 | 2008-11-05 | 中国科学院上海技术物理研究所 | Technological process for quickly releasing edge millimeter-level large area film |
| CN102732848A (en) * | 2012-06-25 | 2012-10-17 | 中国科学院上海技术物理研究所 | Method for preparing single oriented manganese cobalt nickel oxygen film by magnetron sputtering |
| CN103193190A (en) * | 2013-04-11 | 2013-07-10 | 电子科技大学 | Infrared-terahertz dual-band array detector microbridge structure and production method thereof |
| CN206142814U (en) * | 2016-07-11 | 2017-05-03 | 中国科学院上海技术物理研究所 | Microbridge structure manganese cobalt nickel oxygen film infrared detector |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109238475A (en) * | 2018-08-20 | 2019-01-18 | 中国科学院上海技术物理研究所 | There are the manganese cobalt nickel oxygen thermistor detector and method of bent support leg micro-bridge structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106395728B (en) | 2017-08-25 |
| CN106044696A (en) | 2016-10-26 |
| CN206142814U (en) | 2017-05-03 |
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