CN206142814U - Microbridge structure manganese cobalt nickel oxygen film infrared detector - Google Patents
Microbridge structure manganese cobalt nickel oxygen film infrared detector Download PDFInfo
- Publication number
- CN206142814U CN206142814U CN201621119724.9U CN201621119724U CN206142814U CN 206142814 U CN206142814 U CN 206142814U CN 201621119724 U CN201621119724 U CN 201621119724U CN 206142814 U CN206142814 U CN 206142814U
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- China
- Prior art keywords
- layer
- manganese cobalt
- cobalt nickel
- nickel oxygen
- oxygen film
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- Withdrawn - After Issue
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- YQOXCVSNNFQMLM-UHFFFAOYSA-N [Mn].[Ni]=O.[Co] Chemical compound [Mn].[Ni]=O.[Co] YQOXCVSNNFQMLM-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 229920001721 polyimide Polymers 0.000 claims description 29
- 239000004642 Polyimide Substances 0.000 claims description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910003978 SiClx Inorganic materials 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 26
- 239000000463 material Substances 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000010409 thin film Substances 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 238000002161 passivation Methods 0.000 abstract description 3
- 238000005538 encapsulation Methods 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000004922 lacquer Substances 0.000 abstract 1
- 238000011161 development Methods 0.000 description 12
- 230000018109 developmental process Effects 0.000 description 12
- 238000000137 annealing Methods 0.000 description 11
- 238000001259 photo etching Methods 0.000 description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000001514 detection method Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 238000000354 decomposition reaction Methods 0.000 description 4
- 238000002309 gasification Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 150000003949 imides Chemical class 0.000 description 4
- 239000012299 nitrogen atmosphere Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 238000005576 amination reaction Methods 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 230000004043 responsiveness Effects 0.000 description 3
- -1 silicon nitrides Chemical class 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 241000790917 Dioxys <bee> Species 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B1/00—Devices without movable or flexible elements, e.g. microcapillary devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
- B81C1/00468—Releasing structures
- B81C1/00476—Releasing structures removing a sacrificial layer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The utility model discloses a microbridge structure manganese cobalt nickel oxygen film infrared detector spare. The microbridge structure of detector is a platform, make infrared detector with manganese cobalt nickel oxygen thin film materials deposit on this platform, the sacrifice layer of its microbridge structure takes the mode of direct heating to get rid of, and need not redeposit one deck passivation layer on the unit is surveyed to manganese cobalt nickel oxygen, and the sacrifice layer can form arched bearing structure in inside, production process has also been simplified, and save cost, the success rate of device creation has been improved, simultaneously because its platform structure intensity is higher, coating with lacquer such as blackened of infrared device, be difficult for impairedly in the steps such as encapsulation.
Description
Technical field
This patent patent is related to Infrared Detectors, specifically a kind of infrared detector with micro-bridge structure part.
Background technology
There is excellent negative temperature resistance characteristic with the non-refrigeration type infrared detector that manganese cobalt nickel oxygen film material makes,
The research and development of decades is have passed through, its performance is greatly improved.Because the reduction of thin-film material thickness can make infrared letter
Number absorption weaken, so typically increasing INFRARED ABSORPTION using japanning in technique；The reduction of thin-film material thickness also causes to visit
The thermal capacitance for surveying unit reduces, so that its response time becomes big, responsiveness reduces, therefore, the thermal conductivity factor of thin-film material should be reduced
To keep response sensitivity, while increasing responsiveness.
Being used on Infrared Detectors as the micro-bridge structure of substrate using low-resistance silicon can reduce thermal conductivity, improve infrared signal
Absorptivity, for the sensitivity of manganese cobalt nickel oxygen film material Infrared Detectors and the raising of detectivity play an important role.In microbridge
In the manufacturing process of structure, need to deposit one layer of passivation layer in detection unit with PECVD, to carry out reactive ion etching,
Expose sacrifice layer.For oxygen plasma dry etching is often selected in the removal of sacrifice layer, plasma-induced damage is easily caused
Wound, and be difficult to make the micro-bridge structure of high-aspect-ratio；And the reactive ion etching of slab construction is due to adopting high-energy ion bombardment
Physical etchings, chemical isotropic is poor.
The preparation method of the microbridge infrared detector that this patent is related to, can improve the intensity of microbridge, so as to spy
Survey first japanning, carry out being unlikely to damage micro-bridge structure when device is encapsulated；It is cost-effective at the same time it can also simplify Making programme,
Improve the success rate of element manufacturing.
The content of the invention
This patent provides a kind of infrared detector with micro-bridge structure, and the first material of detection adopts manganese cobalt nickel oxygen film.This is specially
The sacrifice layer of the micro-bridge structure of profit design can internally form the supporting construction of arch, improve the intensity of micro-bridge structure, make
It can be compatible with the manufacture craft of manganese cobalt nickel oxygen film Infrared Detectors, and efficiently solves film-type Infrared Detectors
The low problem of response time length, responsiveness.
A kind of structure chart of infrared detector with micro-bridge structure is as shown in Figure 1, Figure 2 and Fig. 3.It includes manganese cobalt nickel oxygen film 1, dioxy
SiClx layer 2, silicon nitride layer 3, polyimide sacrificial layer 4 and low-resistance silicon substrate 5；Described Infrared Detectors is from low-resistance silicon substrate 5
On be followed successively by polyimide sacrificial layer 4, silicon nitride layer 3, silicon dioxide layer 2 and manganese cobalt nickel oxygen film 1, in manganese cobalt nickel oxygen film
There are chromium and golden clad metal electrode 6 on 1；Wherein：
Described polyimide sacrificial layer 4 is domed sacrifice layer, and dome height is 1-3 μm, and sacrificial layer thickness is 1-3
μm, sacrifice layer and silica flat contact；
The thickness 50-500nm of described silicon nitride layer 3；
Described, the thickness 50-500nm of silicon dioxide layer 2；
0.1-2 μm of the thickness of described manganese cobalt nickel oxygen film 1.
Micro-bridge structure panel detector structure designed by this patent is realized by processing step in detail below：
1) a strata imide membrane (PI) is precipitated in low resistance silicon chip as sacrifice layer, sacrificial layer thickness is 1-3 μm；
2) imidization process is carried out under nitrogen atmosphere protection to polyimides；
3) to polyimides exposure, development, polyimides platform is produced；
4) one layer of silicon nitride is first deposited using PECVD, redeposited layer of silicon dioxide is used as structure sheaf；
5) certain thickness manganese cobalt nickel oxygen film is deposited using certain method, and film is made annealing treatment；
6) photoetching, burn into development treatment are carried out to the manganese cobalt nickel oxygen film after annealing, is produced on polyimides platform
Manganese cobalt nickel oxygen film detection unit；
7) using photoetching, development treatment, the photoresist of the electrode shape at cloudy quarter is produced, is plated using double ion sputtering method
Chrome gold electrode, thickness is respectively 30nm, 150nm；
8) photoresist is washed away with acetone, whole device is put in quick anneal oven and is heated, heating-up temperature is in 400-800
DEG C, polyimides decomposition gasification is made, remove polyimides.
The advantage of this patent is：Annealed to remove polyimide sacrificial layer by the way that device is placed in quick anneal oven,
Can avoid precipitating passivation layer, the step follow-up so as to reduce photoetching, reactive ion etching etc. simplifies Making programme, save into
This；Meanwhile, the shape of micro-bridge structure can improve its intensity, can keep when to detect first japanning, carrying out device encapsulation
Certain intensity and be not destroyed, improve the success rate of element manufacturing.
Description of the drawings
Fig. 1 is the profile for heating the infrared detector with micro-bridge structure part structure before sacrifice layer, in figure：1st, manganese cobalt nickel oxygen is thin
Film, 2, silicon dioxide layer, 3, silicon nitride layer, 4, polyimide sacrificial layer, 5, low-resistance silicon substrate.
Fig. 2 is the profile for directly heating the microbridge infrared device structure after sacrifice layer.After heating, sacrifice layer is flat in microbridge
Platform is internally formed domes.
Fig. 3 is the top view for plating microbridge infrared device structure after Top electrode, in figure：6：Chromium and golden clad metal electrode.
Specific embodiment
Below in conjunction with accompanying drawing, this patent is described in further details by instantiation, but the protection domain of this patent
It is not limited to following instance.
Embodiment 1：
1 precipitates one layer of photosensitive polyimide film (ZKPI) as sacrifice layer in low resistance silicon chip, and the speed of sol evenning machine is adjusted
3000 turns, 20 seconds of system, the sacrificial layer thickness of institute's spin coating is 1 μm.
2 pairs of polyimides at 150 DEG C, 180 DEG C, 250 DEG C are incubated 60 minutes respectively under nitrogen atmosphere protection so as to sub-
Amination.
3 pairs of polyimides exposures, developments, produce 70 × 70 μm2Platform.
4 silicon nitrides that one layer of 50nm is first deposited using PECVD, the silica of one layer of 50nm of redeposition.
5 adopt magnetron sputtering method to sputter a layer thickness for 100nm manganese cobalt nickel oxygen film, and film is carried out at annealing
Reason, annealing temperature is 200 DEG C, 5 minutes.
Manganese cobalt nickel oxygen film after 6 pairs of annealing carries out photoetching, burn into development treatment, produces on polyimides platform
50×50μm2Manganese cobalt nickel oxygen film detection unit.
7 adopt photoetching, development treatment, produce the photoresist of the electrode shape at cloudy quarter, using double ion sputtering method chromium plating/
Gold electrode, thickness is respectively 30nm, 150nm.
8 wash away photoresist with acetone, and whole device is put in quick anneal oven, heat 10 minutes at 400 DEG C, make to gather
Acid imide decomposition gasification, removes polyimides.
Embodiment 2：
1 precipitates one layer of photosensitive polyimide film (ZKPI) as sacrifice layer in low resistance silicon chip, and the speed of sol evenning machine is adjusted
3000 turns, 20 seconds of system, the sacrificial layer thickness of institute's spin coating is 2 μm.
2 pairs of polyimides at 150 DEG C, 180 DEG C, 250 DEG C are incubated 60 minutes respectively under nitrogen atmosphere protection so as to sub-
Amination.
3 pairs of polyimides exposures, developments, produce 70 × 70 μm2Platform.
4 silicon nitrides that one layer of 200nm is first deposited using PECVD, the silica of one layer of 200nm of redeposition.
5 adopt magnetron sputtering method to sputter a layer thickness for 700nm manganese cobalt nickel oxygen film, and film is carried out at annealing
Reason, annealing temperature is 200 DEG C, 5 minutes.
Manganese cobalt nickel oxygen film after 6 pairs of annealing carries out photoetching, burn into development treatment, produces on polyimides platform
50×50μm2Manganese cobalt nickel oxygen film detection unit.
7 adopt photoetching, development treatment, produce the photoresist of the electrode shape at cloudy quarter, using double ion sputtering method chromium plating/
Gold electrode, thickness is respectively 30nm, 150nm.
8 wash away photoresist with acetone, and whole device is put in quick anneal oven, heat 10 minutes at 500 DEG C, make to gather
Acid imide decomposition gasification, removes polyimides.
Embodiment 3：
1 precipitates one layer of photosensitive polyimide film (ZKPI) as sacrifice layer in low resistance silicon chip, and the speed of sol evenning machine is adjusted
3000 turns, 20 seconds of system, the sacrificial layer thickness of institute's spin coating is 3 μm.
2 pairs of polyimides at 150 DEG C, 180 DEG C, 250 DEG C are incubated 60 minutes respectively under nitrogen atmosphere protection so as to sub-
Amination.
3 pairs of polyimides exposures, developments, produce 70 × 70 μm2Platform.
4 silicon nitrides that one layer of 500nm is first deposited using PECVD, the silica of one layer of 500nm of redeposition.
5 adopt magnetron sputtering method to sputter a layer thickness for 2 μm of manganese cobalt nickel oxygen film, and film is made annealing treatment,
Annealing temperature is 200 DEG C, 5 minutes.
Manganese cobalt nickel oxygen film after 6 pairs of annealing carries out photoetching, burn into development treatment, produces on polyimides platform
50×50μm2Manganese cobalt nickel oxygen film detection unit.
7 adopt photoetching, development treatment, produce the photoresist of the electrode shape at cloudy quarter, using double ion sputtering method chromium plating/
Gold electrode, thickness is respectively 30nm, 150nm.
8 wash away photoresist with acetone, and whole device is put in quick anneal oven, heat 10 minutes at 800 DEG C, make to gather
Acid imide decomposition gasification, removes polyimides.
Claims (1)
1. a kind of micro-bridge structure manganese cobalt nickel oxygen film Infrared Detectors, including manganese cobalt nickel oxygen film (1), silicon dioxide layer (2), nitrogen
SiClx layer (3), polyimide sacrificial layer (4) and low-resistance silicon substrate (5)；It is characterized in that：
Described Infrared Detectors be followed successively by from low-resistance silicon substrate (5) polyimide sacrificial layer (4), silicon nitride layer (3), two
Silicon oxide layer (2) and manganese cobalt nickel oxygen film (1), there is chromium and golden clad metal electrode (6) in manganese cobalt nickel oxygen film (1)；
Described polyimide sacrificial layer (4) is domed sacrifice layer, and dome height is 1-3 μm, and sacrificial layer thickness is 1-3 μ
M, sacrifice layer and silica flat contact；
The thickness 50-500nm of described silicon nitride layer (3)；
Described, the thickness 50-500nm of silicon dioxide layer (2)；
0.1-2 μm of the thickness of described manganese cobalt nickel oxygen film (1).
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610538776.8A CN106044696A (en) | 2016-07-11 | 2016-07-11 | Infrared detector with micro-bridge structure made of manganese-cobalt-nickel-oxygen film and manufacturing method thereof |
| CN2016105387768 | 2016-07-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206142814U true CN206142814U (en) | 2017-05-03 |
Family
ID=57186561
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610538776.8A Pending CN106044696A (en) | 2016-07-11 | 2016-07-11 | Infrared detector with micro-bridge structure made of manganese-cobalt-nickel-oxygen film and manufacturing method thereof |
| CN201610893671.4A Active CN106395728B (en) | 2016-07-11 | 2016-10-13 | A kind of micro-bridge structure manganese cobalt nickel oxygen film infrared detector and preparation method thereof |
| CN201621119724.9U Withdrawn - After Issue CN206142814U (en) | 2016-07-11 | 2016-10-13 | Microbridge structure manganese cobalt nickel oxygen film infrared detector |
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| CN201610538776.8A Pending CN106044696A (en) | 2016-07-11 | 2016-07-11 | Infrared detector with micro-bridge structure made of manganese-cobalt-nickel-oxygen film and manufacturing method thereof |
| CN201610893671.4A Active CN106395728B (en) | 2016-07-11 | 2016-10-13 | A kind of micro-bridge structure manganese cobalt nickel oxygen film infrared detector and preparation method thereof |
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| Country | Link |
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| CN (3) | CN106044696A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106395728A (en) * | 2016-07-11 | 2017-02-15 | 中国科学院上海技术物理研究所 | Micro-bridge structure Mn-Co-Ni-O thin film infrared detector and preparation method thereof |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109238475A (en) * | 2018-08-20 | 2019-01-18 | 中国科学院上海技术物理研究所 | There are the manganese cobalt nickel oxygen thermistor detector and method of bent support leg micro-bridge structure |
| CN110672211B (en) * | 2019-09-11 | 2020-11-20 | 中国科学院上海技术物理研究所 | Nano-gold modified non-refrigeration infrared detector and manufacturing method thereof |
| CN110793648A (en) * | 2019-11-11 | 2020-02-14 | 中国科学院上海技术物理研究所 | Aerogel heat insulation structure broadband infrared detector and preparation method thereof |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB0605576D0 (en) * | 2006-03-20 | 2006-04-26 | Oligon Ltd | MEMS device |
| CN101298313A (en) * | 2008-05-30 | 2008-11-05 | 中国科学院上海技术物理研究所 | Technological process for quickly releasing edge millimeter-level large area film |
| CN102732848B (en) * | 2012-06-25 | 2014-07-30 | 中国科学院上海技术物理研究所 | Method for preparing single oriented manganese cobalt nickel oxygen film by magnetron sputtering |
| CN103193190B (en) * | 2013-04-11 | 2015-07-29 | 电子科技大学 | A kind of infrared-Terahertz two waveband detector array micro-bridge structure and preparation method thereof |
| CN106044696A (en) * | 2016-07-11 | 2016-10-26 | 中国科学院上海技术物理研究所 | Infrared detector with micro-bridge structure made of manganese-cobalt-nickel-oxygen film and manufacturing method thereof |
-
2016
- 2016-07-11 CN CN201610538776.8A patent/CN106044696A/en active Pending
- 2016-10-13 CN CN201610893671.4A patent/CN106395728B/en active Active
- 2016-10-13 CN CN201621119724.9U patent/CN206142814U/en not_active Withdrawn - After Issue
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106395728A (en) * | 2016-07-11 | 2017-02-15 | 中国科学院上海技术物理研究所 | Micro-bridge structure Mn-Co-Ni-O thin film infrared detector and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106395728B (en) | 2017-08-25 |
| CN106044696A (en) | 2016-10-26 |
| CN106395728A (en) | 2017-02-15 |
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