CN110182754B - Micro-heater with micro-nano structure enhancement and preparation method thereof - Google Patents
Micro-heater with micro-nano structure enhancement and preparation method thereof Download PDFInfo
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- CN110182754B CN110182754B CN201910412251.3A CN201910412251A CN110182754B CN 110182754 B CN110182754 B CN 110182754B CN 201910412251 A CN201910412251 A CN 201910412251A CN 110182754 B CN110182754 B CN 110182754B
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- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
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Abstract
The invention provides a micro-heater with a micro-nano structure reinforcement function and a preparation method thereof, wherein the micro-heater comprises the following steps: providing a semiconductor single crystal substrate, preparing a film mask on the surface of the substrate, and etching a window array; corroding the surface of the substrate by adopting a wet process technology to form a micro-nano pyramid structure on the surface; removing the film mask, preparing a film on the surface of the substrate, and preparing a micro-nano structure film on the surface of the micro-nano pyramid structure; preparing a resistance wire and an electrode of a micro-heater on the surface of the micro-nano structure film by adopting a metal deposition technology and a metal film patterning technology; patterning and etching the film to form a release area; and releasing the micro-nano structure film by adopting a dry etching technology or a wet etching technology to obtain the micro-nano structure film. The invention adopts the micro-processing technology, changes the heat conduction characteristic of the film through the micro-nano structure of the film, can obviously reduce the heat loss, enhances the light radiation, and opens up a new path for obtaining the micro-heater with low power consumption and strong thermal stability and the light source with strong radiation.
Description
Technical Field
The invention relates to the field of MEMS sensor manufacturing, in particular to a micro-heater with a micro-nano structure enhancement function and a preparation method thereof.
Background
With the continuous development of micro-processing technology, micro-heaters based on MEMS technology have been widely used in the fields of gas detection, environmental monitoring, infrared light source, etc. However, due to the diversity and complexity of the detector application environment, the demand for low power consumption, low cost, high performance and high reliability of the micro-heater is increasingly strong. How to manufacture a micro-heater with low power consumption and high performance becomes a research hotspot in the field.
The current MEMS micro-heaters based on silicon substrates are mainly divided into two categories according to different supporting modes, wherein one category is a closed membrane type, and the other category is a cantilever membrane type. The closed membrane type MEMS micro-heater is characterized in that a hot zone of the micro-heater is connected with a silicon substrate through a membrane, and the whole membrane area on the front side is released by adopting a back dry etching or wet etching method. The cantilever membrane type MEMS micro-heater is characterized in that a micro-heating hot area is connected with a substrate through a plurality of cantilevers, and a dry etching method or a wet etching method is adopted to release the hot area and the cantilever beam area on the front side. With the continuous development of MEMS devices and the diversity of application environments, MEMS micro-heaters based on two films come in various shapes, such as: circular, rectangular, square or polygonal, etc., MEMS micro-heaters of the cantilever membrane type have developed single-cantilever, double-cantilever, triple-cantilever and quad-cantilever support membranes.
Due to the continuous popularization and deepening of the application, the requirements on low power consumption, low cost, high performance and high reliability of the micro heater are increasingly strong. The hot zone of the MEMS micro-heater, whether of a closed film type or a cantilever film type, is a two-dimensional planar structure, and the structure is easily influenced by thermal convection, so that the temperature of the hot zone of the micro-heater is unstable, and the response stability and the response sensitivity of a device are influenced. Meanwhile, the two types of micro heaters have large convection heat loss, so that the power consumption of the device in practical application is large. Therefore, how to solve the problems of high heat loss, large power consumption and insufficient thermal stability of the current two-dimensional micro-heater becomes a key research point.
The invention adopts the micro-processing technology, changes the heat conduction characteristic of the film through the micro-nano structure of the film, can obviously reduce the heat loss and enhance the light radiation, and provides an effective method for obtaining the micro-heater with low power consumption and strong thermal stability and the light source with strong radiation.
Disclosure of Invention
The invention aims to provide a micro-heater with a micro-nano structure enhancement function and a preparation method thereof, so that the problems of high heat loss, high power consumption, poor thermal stability and insufficient light radiation of a two-dimensional micro-heater in the prior art are solved.
In order to solve the technical problems, the invention adopts the following technical scheme:
according to a first aspect of the present invention, there is provided a method for manufacturing a micro-heater with micro-nano structure enhancement, the method comprising the steps of: s1: providing a semiconductor single crystal substrate, preparing a film mask on the surface of the semiconductor single crystal substrate, etching a window array on the surface of the film mask, and exposing the surface of the semiconductor single crystal substrate in the window array; s2: corroding the surface of the semiconductor single crystal substrate exposed in the window array by adopting a wet process technology, and forming a micro-nano pyramid structure on the surface; s3: removing the film mask formed in the step S1, preparing a film on the surface of the semiconductor single crystal substrate, and preparing a micro-nano structure film on the surface of the micro-nano pyramid structure formed in the step S2; s4: preparing a micro-heater resistance wire and an electrode on the surface of the micro-nano structure film by adopting a metal deposition technology and a metal film patterning technology; s5: patterning and etching the film formed on the surface of the semiconductor single crystal substrate in the step S3 to form a release region, wherein the micro-nano structure film is supported by a support film structure; and S6: and releasing the micro-nano structure film by adopting a dry etching technology or a wet etching technology to obtain the micro-heater with the reinforced micro-nano structure.
In the step S1: the semiconductor single crystal substrate includes any one of a single crystal silicon substrate, an SOI substrate, and a germanium substrate; the film mask comprises silicon oxide formed by high-temperature thermal oxidation or silicon oxide or silicon nitride formed by chemical vapor deposition; the window array is etched by adopting a plasma etching method; the shape of the window array comprises any one of a square, a rectangle or a circle and a combination thereof.
According to one embodiment of the production method of the present invention, step S1 includes: and (3) putting the silicon wafer subjected to standard cleaning into a high-temperature oxidation furnace, and growing a silicon oxide layer on the surface of the silicon wafer through high-temperature thermal oxidation for later dry etching of the mask layer and the barrier layer in the wet etching process.
The wet technique adopted in step S2 is selected from any one of the following methods: a. adopting a silicon corrosion technology of a mixed solution of potassium hydroxide, isopropanol and deionized water at 80-85 ℃; b. adopting a silicon corrosion technology of a mixed solution of sodium hydroxide, sodium sulfite, isopropanol and deionized water at 75-80 ℃; and c, silicon etching technology by adopting TMAH solution.
The micro-nano pyramid structure obtained in the step S2 has a step height of 0.5-1.5 um, the pyramid is composed of a (111) crystal face, and an included angle between the (111) crystal face and the surface of the semiconductor single crystal substrate is 54.7 degrees.
According to one embodiment of the production method of the present invention, step S2 includes: patterning the surface of the silicon wafer by adopting a photoetching technology, and etching the pattern on the surface of the silicon wafer by using an etching technology. The specific process comprises the following steps: designing a light-emitting engraving plate, and designing regularly arranged square exposure areas in a layout; photoetching, washing with deionized water, drying with nitrogen, and baking for 30 min; finally, dry etching is carried out, silicon oxide is etched by adopting Samco plasma etching equipment, the photoresist is removed, and the surface of the substrate in the square area is exposed; and (3) processing the silicon wafer by using a wet etching process, and preparing a micro-nano pyramid structure, also called a black silicon structure, on the surface of the single crystal substrate in the square area. The method comprises the following specific steps: firstly, preparing a wet etching mixed solution, putting KOH, 40mL of isopropanol and deionized water into a beaker, fully stirring, and heating in a water bath; then flatly placing the silicon wafer into the mixed solution for corrosion; finally, the silicon wafer is placed into deionized water for washing and is dried by nitrogen.
The preparation method of the film in the step S3 is selected from any one of the following methods: high temperature thermal oxidation, chemical vapor deposition, and plasma enhanced chemical deposition.
The film prepared in step S3 includes: silicon oxide films, silicon nitride films, and the like.
According to one embodiment of the production method of the present invention, step S3 includes: removing an oxide layer mask on the surface of the silicon wafer by using a BOE solution, and after corroding for a certain time, washing by using deionized water and drying by using nitrogen; and depositing heat-insulating multilayer films on the surface of the silicon wafer to form a micro-nano structure film in the square area. The method comprises the following specific steps: firstly, putting a silicon wafer into a high-temperature oxidation furnace, and growing a silicon oxide layer on the surface of the silicon wafer through high-temperature thermal oxidation; and then placing the silicon nitride film into a low-pressure chemical vapor deposition system to deposit silicon nitride, wherein the residual stress is within the range of 50-200 MPa.
The metal deposition technology in the step S4 includes a magnetron sputtering metal deposition technology and a metal evaporation deposition technology; the metal film patterning technology comprises an organic-ultrasonic metal stripping patterning technology taking a thick photoresist as a sacrificial layer and a high-energy ion beam etching patterning technology with physical action; the metal film comprises a film formed by combining Ti/Pt, Ni/Pt, Cr/Pt and other adhesion layer metals with temperature coefficient stable metals; the resistance wire of the micro-heater has the width of 5-10 um and the thickness of 1000-5000 angstrom; the resistance wire shape comprises a snake shape, a zigzag shape or a spiral shape.
According to one embodiment of the production method of the present invention, step S4 includes: firstly, designing a micro-heater resistance mercerizing engraving; photoetching, washing with deionized water and drying with nitrogen; depositing Ti/Pt metal of 200/2000 angstrom on the patterned surface by magnetron sputtering technology; finally, stripping metal outside the pattern area by using a method of combining organic solution and ultrasound to prepare a micro-heating resistance wire and an electrode; the silicon wafer is treated using a gold alloying technique. The method comprises the following specific steps: and (3) placing the silicon wafer into a furnace tube at 350 ℃ and carrying out heat treatment in a nitrogen environment. This step makes the deposited metal more stable and more strongly adherent to the film.
In the step S5, patterning is performed by using an ultraviolet lithography technique; the film etching adopts a plasma etching technology; the support membrane structure includes a closed membrane structure and a cantilever membrane structure, the cantilever membrane structure including: single cantilever beam, double cantilever beam, three cantilever beams or four cantilever beams, etc.
According to one embodiment of the production method of the present invention, step S5 includes: and transferring the pattern to the surface of the silicon wafer by adopting a photoetching technology, and then carrying out plasma etching to obtain a pattern of a release area. The method comprises the following specific steps: firstly, designing a light engraving plate, and designing regularly arranged graphs in the layout with a period of 2 mm; photoetching, washing with deionized water and drying with nitrogen; and finally, performing dry etching, namely etching the composite film by using Samco plasma etching equipment for 1.35um for 8min30s, and removing the photoresist to expose the surface of the substrate in the pattern area.
The dry etching technique adopted in the step S6 includes a plasma etching technique and a xenon fluoride isotropic etching technique, and the wet etching technique includes an anisotropic etching technique of KOH and TMAH and an isotropic etching technique of nitric acid/hydrogen peroxide.
According to one embodiment of the production method of the present invention, step S6 includes: firstly, heating a TMAH solution to 80 ℃ in a water bath, and magnetically stirring; and then, putting the silicon wafer into a solution, performing deionized cleaning and nitrogen blow-drying after wet etching, and finally obtaining the micro-heater based on the suspended micro-nano structure film.
According to a second aspect of the invention, a micro-heater with micro-nano structure enhancement prepared according to the preparation method is provided.
In summary, the present invention provides a method for preparing a micro-heater with a micro-nano structure enhancement, comprising the steps of: providing a semiconductor single crystal substrate; firstly, growing a silicon oxide film on the surface of a single crystal substrate by adopting a high-temperature thermal oxidation technology, and etching a window on the surface of the silicon oxide film to expose the surface of the single crystal substrate; preparing a micro-nano gold tower structure on the exposed monocrystalline silicon surface by adopting a wet etching method, sequentially depositing a silicon oxide or silicon nitride composite film, preparing a micro-nano structure film in a window area, and preparing a micro-heater resistance wire on the surface of the micro-nano structure film by using a metal film patterning technology; and finally, releasing the micro-nano structure film by adopting a wet etching or dry etching method to prepare the micro-heater with the enhanced micro-nano structure.
The invention adopts the micro-processing technology, changes the heat conduction characteristic of the film through the micro-nano structure of the film, can obviously reduce the heat loss and enhance the light radiation, and provides an effective method for obtaining the micro-heater with low power consumption and strong thermal stability and the light source with strong radiation.
Drawings
FIG. 1 shows a (100) monocrystalline silicon substrate;
FIG. 2 is a schematic diagram showing the structure after high temperature thermal oxidation of the surface of a (100) single crystal silicon substrate to prepare a silicon oxide mask layer;
FIG. 3 is a schematic structural diagram after etching a square window in a silicon oxide mask layer by using a plasma etching technique;
fig. 4 is a schematic structural diagram of a micro-nano pyramid structure prepared by wet etching in a square window, and fig. 4A is an enlarged schematic structural diagram of the micro-nano pyramid structure;
FIG. 5 is a schematic diagram of the structure after removal of the silicon oxide mask layer by BOE;
FIG. 6 is a schematic structural diagram of a micro-nano structure film prepared by a single-layer or multi-layer film deposited by a film preparation technology;
FIG. 7 is a schematic diagram showing the structure after preparation of the micro-heating wire and electrodes on the surface of the substrate;
FIG. 8 is a schematic diagram showing the structure after the release region is etched using a plasma etching technique;
FIG. 9 shows a four cantilever beam supported micro-heater with micro-nano structure enhancement prepared using wet etching technique;
fig. 10 shows a micro-nano structure enhanced micro-heater supported by a double cantilever beam prepared according to another preferred embodiment of the present invention.
Wherein, 1 is a monocrystalline silicon substrate; 2-a silicon oxide film; 3-etching a square window; 4, a micro-nano pyramid structure; 5-single or multilayer films; 6/13-a micro-nano structure film; 7-Ti/Pt resistance wire; 8-Ti/Pt electrodes; 9-etching a release area; 10-etching a groove; 11-a suspended micro-nano structure film; 12-cantilever beam; 13-rectangular micro-nano structure film.
Detailed Description
The present invention will be further described with reference to the following specific examples. It should be understood that the following examples are illustrative only and are not intended to limit the scope of the present invention.
According to a preferred embodiment of the present invention, a method for manufacturing a micro-heater with a micro-nano structure enhancement is provided, which comprises the following specific steps:
1) a double-sided polished monocrystalline silicon substrate 1 with a (100) crystal face is selected, the large-edge-cut crystal orientation of the wafer is a <110> crystal orientation, the size of the wafer is 4 inches, the thickness of the wafer is 400-420 um, the resistivity of the wafer is 3-8 ohm centimeters, and the doping type of the wafer is an N type, as shown in figure 1. In fact, the semiconductor substrate selected in step S1 is not limited to a single crystal silicon substrate, and may be an SOI substrate, a germanium substrate, or the like.
2) The single crystal silicon substrate 1 selected in step S1 is subjected to standard cleaning using a standard cleaning process in a semiconductor process. The specific process comprises the following steps: putting the silicon chip selected in the step S1 into a mixed solution of concentrated sulfuric acid and hydrogen peroxide in a volume ratio of 7:1, cleaning at 120 ℃, and washing for 10 minutes by using deionized water; then putting the silicon wafer into a mixed solution of deionized water, hydrogen peroxide and ammonia water in a volume ratio of 7:1:1, cleaning at 75 ℃, and washing for 10 minutes by using the deionized water; and finally, putting the silicon wafer into a mixed solution of deionized water and hydrofluoric acid with the volume ratio of 50:1, washing for 10 minutes at normal temperature, washing with the deionized water, and drying with nitrogen.
3) And (4) putting the silicon wafer cleaned in the step S2 standard into a high-temperature oxidation furnace, setting the temperature to be 1100 ℃, and growing a high-quality silicon oxide layer 2 with the thickness of 1000 angstroms on the surface of the silicon wafer through high-temperature thermal oxidation for a later dry etching mask layer and a barrier layer in the wet etching process. Fig. 2 shows the preparation of a silicon oxide mask layer for high temperature thermal oxidation of a (100) monocrystalline silicon substrate surface, with 1 representing monocrystalline silicon and 2 representing a high temperature grown silicon oxide layer.
4) And patterning the surface of the silicon wafer by adopting a photoetching technology, and etching the pattern 3 on the surface of the silicon wafer by adopting an etching technology. The specific process comprises the following steps: firstly, designing a light engraving plate, and designing exposure areas of regularly arranged squares 3 in a layout, wherein the side length of each square is 150um, and the period is 2 mm; carrying out photoetching, carrying out spin coating of 1.7um LC100A photoresist on an orbit glue spreader for 90s, carrying out ultraviolet exposure for 4.5s, carrying out development for 45s, washing with deionized water, carrying out blow-drying with nitrogen, and carrying out postbaking for 30 min; and finally, performing dry etching, namely etching the silicon oxide by 1000 angstroms by adopting Samco plasma etching equipment for 1min, and removing the photoresist to expose the surface of the substrate in the square area. Fig. 3 shows a square window etched by the plasma etching technique, and 3 is represented as a square pattern region.
5) And (3) processing the silicon wafer in the step 4) by using a wet etching process, and preparing a micro-nano pyramid structure 4, also called a black silicon structure, on the surface of the single crystal substrate in the square area. The method comprises the following specific steps: firstly, preparing a wet etching mixed solution, putting 16.18g of KOH, 40mL of isopropanol and 760mL of deionized water into a beaker, fully stirring, and heating in a water bath to 85 ℃; then, horizontally placing the silicon wafer in the step 4) into the mixed solution, and corroding for 5 min; finally, the silicon wafer is placed into deionized water for washing and is dried by nitrogen. Fig. 4 shows a micro-nano pyramid structure prepared by wet etching in a circular window, 4 represents the micro-nano pyramid structure, and fig. 4A shows a schematic diagram of the micro-nano structure. The step height of the micro-nano pyramid structure 4 is 0.5-1.5 um, and the pyramid is composed of a (111) crystal face, and the included angle theta between the (111) crystal face and the surface of the substrate is 54.7 degrees.
6) Removing the oxide layer mask on the surface of the silicon wafer in the step 5) by using a BOE solution, and after the etching time is 2min, washing by using deionized water and drying by using nitrogen. Fig. 5 shows the removal of the silicon oxide mask layer by BOE, and 4 represents the micro-nano pyramid structure.
7) Depositing a heat-insulating multilayer film 5 on the surface of the silicon wafer in the step 6), and forming a micro-nano structure film 6 in a square area. The method comprises the following specific steps: firstly, putting a silicon wafer into a high-temperature oxidation furnace, setting the temperature to be 1100 ℃, and growing a high-quality silicon oxide layer of 3500 angstroms on the surface of the silicon wafer through high-temperature thermal oxidation; and then placing the silicon nitride into a low-pressure chemical vapor deposition system to deposit 1um of low-stress silicon nitride, wherein the residual stress is within the range of 50-200 MPa. Fig. 6 shows a single-layer or multi-layer film deposited by the film preparation technology, a micro-nano structure film is prepared, 5 represents a composite film, and 6 represents a micro-nano structure film.
8) Preparing a micro-heating resistance wire 7 and an electrode 8 on the surface of the substrate in the step 7). The method comprises the following specific steps: firstly, designing a micro-heater resistance mercerizing engraving; carrying out photoetching, spin-coating 3um LC100A photoresist on an orbit glue spreader, prebaking for 40s, carrying out ultraviolet exposure for 7.5s, developing for 55s, then flushing with deionized water and drying with nitrogen; depositing Ti/Pt metal of 200/2000 angstrom on the patterned surface by magnetron sputtering technology; finally, metal outside the pattern area is stripped by using a method of combining organic solution and ultrasound, and the micro-heating resistance wire 7 and the electrode 8 are prepared. Fig. 7 shows the preparation of a heating resistor for a micro-heater, 6 a micro-heating wire, and 8 an electrode.
9) The silicon wafer of step S8 is processed using a gold alloying technique. The method comprises the following specific steps: and (3) placing the silicon wafer in the step 8) into a furnace tube at 350 ℃, and carrying out heat treatment for 30min in a nitrogen environment. This step makes the deposited metal more stable and more strongly adherent to the film.
10) And (3) transferring the pattern 9 to the surface of the silicon wafer in the step 9) by adopting a photoetching technology, and then carrying out plasma etching to obtain a release area pattern 9. The method comprises the following specific steps: firstly, designing a photoetching plate, and designing a pattern 7 which is regularly arranged and is shown in figure 6 in a layout, wherein the period is 2 mm; carrying out photoetching, carrying out spin coating of 3um LC100A photoresist by using an orbit glue spreader for 90s, carrying out ultraviolet exposure for 14s, developing for 55s, then washing by using deionized water and drying by using nitrogen, and carrying out postbaking for 30 min; and finally, performing dry etching, namely etching the composite film by using Samco plasma etching equipment for 1.35um for 8min30s, and removing the photoresist to expose the surface of the substrate in the region of the pattern 9. Fig. 8 shows the relieved areas etched for the plasma etching technique and 9 shows the relieved areas for the dry etching.
11) And (5) etching the silicon wafer in the step S8 by using an anisotropic wet etching process to obtain the micro heater based on the suspended micro-nano structure film 11. The method comprises the following specific steps: firstly, heating a TMAH solution to 80 ℃ in a water bath, wherein the magnetic stirring speed is 500 r/s; and then, putting the silicon wafer obtained in the step S8 into a solution, performing wet etching for 4 hours, then performing deionized cleaning and nitrogen blow-drying, and finally obtaining the micro heater of the suspended micro-nano structure film supported by the four cantilever beams. Fig. 9 shows a micro-heater with micro-nano structure enhancement prepared by wet etching, 10 denotes an etching tank, 11 denotes a suspended micro-nano structure film, and 12 denotes a cantilever beam. In the present embodiment, a supporting membrane structure of four cantilever beams is adopted, but it should be understood that the structure is only used as an example and is not limited thereto, and may actually be adjusted to any other structure such as a single cantilever beam, a double cantilever beam, three cantilever beams, or a closed membrane structure according to the requirement, as long as the supporting function for the micro-nano structure membrane can be achieved.
12) And (4) repeating the steps 1) to 11), wherein the difference lies in that the micro-nano structure area is changed into a rectangle, the original four cantilever beams are changed into double cantilever beams for supporting the membrane structure, and finally, the suspended micro-nano structure reinforced micro-heater supported by the double cantilever beams is obtained by wet etching and releasing. Fig. 10 shows a micro-heater with micro-nano structure enhancement supported as a double cantilever beam, and 13 shows a rectangular micro-nano structure film.
The above embodiments are merely preferred embodiments of the present invention, which are not intended to limit the scope of the present invention, and various changes may be made in the above embodiments of the present invention. All simple and equivalent changes and modifications made according to the claims and the content of the specification of the present application fall within the scope of the claims of the present patent application. The invention has not been described in detail in order to avoid obscuring the invention.
Claims (10)
1. A preparation method of a micro-heater with a micro-nano structure enhancement is characterized by comprising the following steps:
s1: providing a semiconductor single crystal substrate, preparing a film mask on the surface of the semiconductor single crystal substrate, etching a window array on the surface of the film mask, and exposing the surface of the semiconductor single crystal substrate in the window array;
s2: corroding the surface of the semiconductor single crystal substrate exposed in the window array by adopting a wet process technology, and forming a micro-nano pyramid structure on the surface;
s3: removing the film mask formed in the step S1, preparing a single-layer film or a composite film on the surface of the semiconductor single crystal substrate, and preparing a micro-nano structure film on the surface of the micro-nano pyramid structure formed in the step S2;
s4: preparing a micro-heater resistance wire and an electrode on the surface of the micro-nano structure film by adopting a metal deposition technology and a metal film patterning technology;
s5: patterning and film etching are carried out on the single-layer film or the composite film formed on the surface of the semiconductor single crystal substrate in the step S3 to form a release region, and the micro-nano structure film is supported through a support film structure; and
s6: and releasing the micro-nano structure film by adopting a dry etching technology or a wet etching technology to obtain the micro-heater with the reinforced micro-nano structure.
2. The production method according to claim 1, wherein in the step S1: the semiconductor single crystal substrate includes any one of a single crystal silicon substrate, an SOI substrate, and a germanium substrate; the film mask comprises silicon oxide formed by high-temperature thermal oxidation or silicon oxide or silicon nitride formed by chemical vapor deposition; the window array is etched by adopting a plasma etching method; the shape of the window array includes any one of a rectangle or a circle and a combination thereof.
3. The method according to claim 1, wherein the wet technique used in step S2 is selected from any one of the following methods: a. adopting a silicon corrosion technology of a mixed solution of potassium hydroxide, isopropanol and deionized water at 80-85 ℃; b. adopting a silicon corrosion technology of a mixed solution of sodium hydroxide, sodium sulfite, isopropanol and deionized water at 75-80 ℃; and c, silicon etching technology by adopting TMAH solution.
4. The preparation method according to claim 1, wherein the micro-nano pyramid structure obtained in the step S2 has a step height of 0.5um to 1.5um, the pyramid is composed of a (111) crystal plane, and an included angle between the (111) crystal plane and the surface of the semiconductor single crystal substrate is 54.7 degrees.
5. The preparation method according to claim 1, wherein the preparation method of the single-layer film or the composite film and the micro-nano structure film in the step S3 is selected from any one of the following methods: high temperature thermal oxidation method, chemical vapor deposition method.
6. The preparation method according to claim 5, wherein the single-layer film or the composite film and the micro-nano structure film prepared in the step S3 comprise: silicon oxide film, silicon nitride film.
7. The method according to claim 1, wherein the metal deposition technique in the step S4 includes a magnetron sputtering metal deposition technique and a metal evaporation deposition technique; the metal film patterning technology comprises an organic-ultrasonic metal stripping patterning technology taking a thick photoresist as a sacrificial layer and a high-energy ion beam etching patterning technology with physical action; the metal film comprises Ti/Pt, Ni/Pt and Cr/Pt; the resistance wire of the micro-heater is 5-10 um in width and 1000-5000 angstrom in thickness; the resistance wire shape comprises a snake shape, a zigzag shape or a spiral shape.
8. The manufacturing method according to claim 1, wherein in the step S5, patterning is performed by using an ultraviolet lithography technique; the film etching adopts a plasma etching technology; the support membrane structure includes a closed membrane structure and a cantilever membrane structure, the cantilever membrane structure including: any one of a single cantilever beam, a double cantilever beam, three cantilever beams or four cantilever beams.
9. The preparation method according to claim 1, wherein the dry etching technique adopted in step S6 includes a plasma etching technique and a xenon fluoride isotropic etching technique, and the wet etching technique includes an anisotropic etching technique of KOH and TMAH and an isotropic etching technique of nitric acid/hydrogen peroxide.
10. A micro-heater with micro-nano structure enhancement prepared according to the preparation method of any one of claims 1-9.
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| CN1538934A (en) * | 2001-07-31 | 2004-10-20 | ����Ĭ������˹�����ҿ�ѧ�о����� | Method for fabrication of suspended porous silicon microstructures and application in gas sensors |
| CN101762623A (en) * | 2010-01-08 | 2010-06-30 | 哈尔滨理工大学 | Semiconductor-type gas sensor with A1N heat isolation panel double-side micro structure and manufacturing method thereof |
| CN101917784A (en) * | 2010-09-10 | 2010-12-15 | 中国科学院上海微系统与信息技术研究所 | Three-dimensional micro heater with groove-shaped heating film region and manufacturing method thereof |
| CN101932146A (en) * | 2010-09-10 | 2010-12-29 | 中国科学院上海微系统与信息技术研究所 | Three-dimensional microheater with arc groove heating membrane area and manufacturing method thereof |
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