CN101762623A - Semiconductor-type gas sensor with A1N heat isolation panel double-side micro structure and manufacturing method thereof - Google Patents
Semiconductor-type gas sensor with A1N heat isolation panel double-side micro structure and manufacturing method thereof Download PDFInfo
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Abstract
A semiconductor-type gas sensor with an A1N heat isolation panel double-side micro structure and a manufacturing method thereof relate to a self-heat isolation panel double-side micro structural gas sensor and a manufacturing method thereof. The invention solves the problems that the existing Si-material gas sensor has high cost of process development, complex process and the like, and is characterized in that four positions of the diagonal line of a substrate are etched with heat isolation grooves; the back of the substrate is provided with heating electrodes and signal electrodes; the heating electrodes of the front and the back of the substrate are communicated by a through hole; the heating electrodes are arranged in a snakelike structure, and a sensitive film is attached on the signal electrode. The manufacturing method is as follows: 1. selecting the substrate; 2. preparing the Pt metal film signal electrode of the sensor: photoetching, coating film and stripping the metal film; 3. preparing the antarafacial heating electrodes: firstly, coating film, and then etching with laser; 4. isolating heat; 5. annealing; and 6. attaching the sensitive film. The invention can be used as a sensor for semiconductor-type C12, NOX, CO and the like.
Description
Technical field
The present invention relates to field of sensing technologies, be specifically related to a kind of self-heating and isolate panel double-side micro structure gas sensor and manufacture method thereof.
Background technology
At present, semiconductor-type gas sensor both domestic and external, be mainly used in and detect inflammable gas and toxic gas, preventing to poison and combustion explosion plays a part to become more and more important, semiconductor-type gas sensor is except gas detecting element, also must dispose a well heater, be heated to required working temperature, present SnO with practicability to gas detecting element
2Inorganic semiconductor formula gas sensors such as system, zinc oxide series gas sensor generally need be heated to 300 ℃～500 ℃ just gas-sensitive property, all need mix noble metal catalyst and improve its sensitivity and selectivity, thereby activity of such catalysts, life-span etc. are very big to the performance impact of element.So developed the organic semiconductor of low-temperature heat (150 ℃～room temperature) work again, but since natural organic semiconductor high resistance 10
-9More than the Ω, and the organic semi-conductor conductivity is always much lower than inorganic semiconductor, adopts interdigital electrode structure commonly used, its resistance is quite big, is subject to disturb, and is unfavorable for the subsequent conditioning circuit signals collecting, bring difficulty for acquired signal and subsequent conditioning circuit, limited its actual use.Therefore, to inorganic semiconductor formula gas sensor new thinking of development should be arranged.
The silicon coefficient of heat conductivity is 150W/mK in the time of 20 ℃, and heat conductivility is compared relatively poor with AlN, and the eighties in 20th century, aluminium nitride has higher heat-transfer capability as a kind of ceramics insulator, makes aluminium nitride be widely used in the microelectronics field.Different with beryllia is that aluminium nitride is nontoxic.Aluminium nitride is handled with metal, can replace alumina and beryllia and be applied to a large amount of electronic devices.Aluminium nitride can prepare by the reducing action or the direct metal nitride aluminium of aluminium oxide and carbon.Aluminium nitride is a kind of material that links to each other with covalent bond, and it has the hex crystal structure, with zinc sulphide, wurtzite similar shape.AlN is highly stable in the hot environment of inertia, and in air, when temperature was higher than 700 ℃, the low-level oxidation effect can take place material surface, forms the sull of 5～10 nanometer thickness.
Along with the development of MEMS technology, substrate material performances such as non-silicon based ceramic, glass improve constantly, and are widely used in the Microstructure Sensor field, have wide application and development prospect.
Summary of the invention
There are shortcomings such as heat conductivility is poor, process exploitation cost height, complex process in the present invention for the gas sensor that solves current material, propose a kind of semiconductor-type gas sensor and manufacture method thereof of AlN heat isolation panel double-side micro structure.
The semiconductor-type gas sensor of AlN heat isolation panel double-side micro structure, it comprises the AlN ceramic substrate, two heating electrodes, the front well heater, back heater, two signal electrodes, two signals collecting sheets, sensitive membrane and hot isolation channel, on cornerwise four orientation of described AlN ceramic substrate, be etched with hot isolation channel, hot isolation channel makes and respectively forms four isolated island projectioies at AlN ceramic substrate front and back, edge along four orientation of hot isolation channel is etched with four through holes, AlN ceramic substrate front is provided with heating electrode, the front well heater, signal electrode and signals collecting sheet, heating electrode is applied in two through holes of AlN ceramic substrate one side, signal electrode is applied in two other through hole, the front well heater is the middle snakelike arrangement architecture that has breach, two signals collecting sheets insert the middle breach of snakelike arrangement architecture of front well heater, the pin of signals collecting sheet is arranged in the hot isolation channel, and be connected with signal electrode, two pins of front well heater are arranged in the hot isolation channel, and be connected with heating electrode 2, the part of inserting the snakelike arrangement architecture of heating electrode at the signals collecting sheet has sensitive membrane, the back heater at the AlN ceramic substrate back side is snakelike arrangement architecture, and be arranged on the centre position at the AlN ceramic substrate back side, two pins of back heater are arranged in the hot isolation channel, and are connected with heating electrode.
The manufacture method of the semiconductor-type gas sensor of AlN heat isolation panel double-side micro structure, concrete steps are as follows:
Step 2: the preparation of sensor Pt metallic film signal electrode, make in the following order:
The end treating fluid that production order two a, the AlN ceramic substrate after step 1 handled are put into positive photoresist soaks 20～30min, put into 150～180 ℃ of dryings of drying box again, put into sol evenning machine gluing under 2500r/min～5000r/min speed again, put into baking oven then and dry 20～40min down at 80～100 ℃; With well heater pattern mask version is the plate-making figure, and 15～30s exposes on the double-sided exposure machine; Develop in the AlN ceramic substrate developer solution after the exposure 20～40s, rinsing 20～30s in the deionized water then; The AlN ceramic substrate that will scribble photoresist is at last put into drying box, toasts 30～40min under 100～120 ℃ of temperature;
Production order two b, the AlN ceramic substrate after production order two a are handled are put into many targets of ultrahigh vacuum sputter coating machine, and plated film adopts the platinum target, and purity is 99.99%, the size Φ 60 * 2.5mm of target; Plated film vacuum tightness reaches 10
-5During Pa, toward the logical argon gas of sputtering chamber, ar pressure is 1.5Pa, adopts d.c. sputtering, and sputtering power is 32W, and the time is 30min, and the flow of argon gas is 15～20ml/min;
Production order two c, the AlN ceramic substrate of plated film is put into acetone soln soak, the dissolving photoresist, and discontinuity is little ultrasonic, till metal pattern is clear;
Step 3: the preparation of antarafacial heating electrode, make in the following order:
Production order three a, the AlN ceramic substrate after step 2 handled are put into many targets of ultrahigh vacuum sputter coating machine, make pottery at AlN
Ceramic chip back side platinum plating film, plated film adopts the platinum target, and purity is 99.99%, the size Φ 60 * 2.5mm of target; Plated film vacuum tightness reaches 10
-5During Pa, toward the logical argon gas of sputtering chamber, ar pressure is 1.5Pa, adopts d.c. sputtering, and sputtering power is 32W, and the time is 30min, and the flow of argon gas is 15～20ml/min;
Production order three b, laser ablation goes out the grid heating electrode, etching power 1200～1500W, etch rate 0.2～0.5mm/s, resistance trimming size R on the AlN ceramic substrate of platinum plating film overleaf
0Be 25～30 Ω;
Step 4: with the AlN ceramic substrate laser ablation that step 3 was handled, 4 isolation channels of etching around AlN ceramic substrate heating electrode, laser ablation power 1500～1800W, etch rate 0.1～0.5mm/s;
Step 5: with 800～1000 ℃ of annealing of AlN ceramic substrate, the 2～3h after the step 4 processing;
Step 6: the AlN ceramic substrate after the step 5 processing is utilized silk-screen printing technique or coating process, attached one deck gas sensitive material on the gas microsensor.
The AlN material has: (1) thermal conductivity height (about 270W/mK) near BeO and SiC, is Al
2O
3More than 5 times; (2) thermal expansivity (4.5 * 10
-6℃) and Si (3.5～4 * 10
-6℃) and GaAs (6 * 10
-6℃) coupling; (3) various electrical properties (specific inductive capacity, dielectric loss, body resistivity, dielectric strength) are good; (4) good mechanical property, rupture strength is higher than Al
2O
3With the BeO pottery, can be normal pressure-sintered; (5) purity height; (6) light-transfer characteristic is good; (7) nontoxic; (8) can adopt casting technique to make.Be a kind of up-and-coming high power integrated circuit substrate and wrappage.Be mainly used in: do high-performance substrate material and encapsulating material in the products such as high density mixing circuit, microwave power device, power electronic devices, optoelectronic component, conductor refrigeration.AlN ceramic substrate 1 self is made electrode dielectric layer, because substrate coefficient of heat conductivity height, heating part and signals collecting partly adopt the antarafacial structure, scatter and disappear for preventing the temperature lateral transport, AlN ceramic substrate 1 diagonal line four direction adopts hot isolation channel, reduced the heating power consumption penalty, there is the problem of heat conductivility difference in the gas sensor that has solved current material.
The present invention adopts the AlN substrate to combine by lithography stripping technology and Laser Micro-Machining technology, utilize the high thermoconductivity of AlN to adopt backside laser resistance trimming etching heating electrode, utilize the hot isolation channel of laser scribing etching again, reduced the heating power consumption penalty, the semiconductor-type gas sensor that has prepared a kind of AlN heat isolation panel double-side micro structure, this gas sensor has Pt film temperature sensor, can carry out the temperature signal feedback; It is little, low in energy consumption that the semiconductor-type gas sensor of AlN heat isolation panel double-side micro structure of the present invention has a volume, and advantages such as technology is simple, the process exploitation cost is low, self-temperature compensating function can be used as semiconductor-type Cl
2, NO
X, gas sensor such as CO, have wide application and development prospect.
Description of drawings
Fig. 1 is the semiconductor-type gas sensor Facad structure synoptic diagram of AlN heat isolation panel double-side micro structure.Fig. 2 is the semiconductor-type gas sensor structure synoptic diagram of AlN heat isolation panel double-side micro structure.
Embodiment
Embodiment one, in conjunction with Fig. 1 and Fig. 2 present embodiment is described, the semiconductor-type gas sensor of AlN heat isolation panel double-side micro structure, it comprises AlN ceramic substrate 1, two heating electrodes 2, front well heater 2-1, back heater 2-2, two signal electrodes 3, two signals collecting sheet 3-1, sensitive membrane 4 and hot isolation channel 5, on described AlN ceramic substrate 1 cornerwise four orientation, be etched with hot isolation channel 5, hot isolation channel 5 makes and respectively forms four isolated island projectioies 51 at AlN ceramic substrate 1 front and back, edge along 5 four orientation of hot isolation channel is etched with four through hole 1-1, AlN ceramic substrate 1 front is provided with heating electrode 2, front well heater 2-1, signal electrode 3 and signals collecting sheet 3-1, heating electrode 2 is applied among two through hole 1-1 of AlN ceramic substrate 1 one sides, signal electrode 3 is applied among two other through hole 1-1, front well heater 21 is the middle snakelike arrangement architecture that has breach, two signals collecting sheet 3-1 insert the middle breach of snakelike arrangement architecture of front well heater 2-1, the pin of signals collecting sheet 3-1 is arranged in the hot isolation channel 5, and be connected with signal electrode 3, two pins of front well heater 2-1 are arranged in the hot isolation channel 5, and be connected with heating electrode 2, the part of inserting the snakelike arrangement architecture of heating electrode 2 at signals collecting sheet 3-1 has sensitive membrane 4, the back heater 2-2 at AlN ceramic substrate 1 back side is snakelike arrangement architecture, and be arranged on the centre position at AlN ceramic substrate 1 back side, two pins of back heater 2-2 are arranged in the hot isolation channel 5, and are connected with heating electrode 2.
Embodiment two, in conjunction with Fig. 1 and Fig. 2 present embodiment is described, the difference of present embodiment and embodiment one is that AlN ceramic substrate 1 is square.
Embodiment three, in conjunction with Fig. 1 and Fig. 2 present embodiment is described, present embodiment and embodiment one or twos' difference is that the length of side d of AlN ceramic substrate 1 is 3.1～3.3mm, between adjacent two through hole 1-1 outer boundaries is 2.9～3.1mm apart from l, the isolated island projection 5-1 that is formed by hot isolation channel 5 is four isosceles trapezoids, wherein per two relative isosceles trapezoid congruences, the upper base n1 of a pair of isolated island projection 5-1 isosceles trapezoid is 0.45～0.55mm, the m1 that goes to the bottom is 1.35～1.45mm, high h1 is 0.25～0.35mm, another upper base n2 to isolated island projection 51 isosceles trapezoids is 0.85～0.95mm, the m2 that goes to the bottom is 1.55～1.65mm, high h2 is 0.45～0.55mm, the snakelike arrangement architecture length k of back heater 2-2 is 0.95～1.05mm, spacing r is 0.045～0.055mm, sensitive membrane 4 length e are 0.5～0.6mm, width f is 0.2～0.25mm, the length p of the snakelike arrangement architecture of front well heater 2-1 is 1.04～1.06mm, sensitive membrane 4 width f are less than the width of front well heater 2-1 central indentation, through hole 1-1 is a square, length of side w is 0.3～0.5mm, and what two signals collecting sheet 3-1 inserted barbed portion in the middle of the snakelike arrangement architecture of front well heater 2-1 is 0.09～0.11mm apart from s.
The manufacture method of the semiconductor-type gas sensor of embodiment four, AlN heat isolation panel double-side micro structure, concrete steps are as follows:
Step 2: the preparation of sensor Pt metallic film signal electrode, make in the following order:
The end treating fluid that production order two a, the AlN ceramic substrate after step 1 handled are put into positive photoresist soaks 20～30min, put into 150～180 ℃ of dryings of drying box again, put into sol evenning machine gluing under 2500r/min～5000r/min speed again, put into baking oven then and dry 20～40min down at 80～100 ℃; With well heater pattern mask version is the plate-making figure, and 15～30s exposes on the double-sided exposure machine; Develop in the AlN ceramic substrate developer solution after the exposure 20～40s, rinsing 20～30s in the deionized water then; The AlN ceramic substrate that will scribble photoresist is at last put into drying box, toasts 30～40min under 100～120 ℃ of temperature;
Production order two b, the AlN ceramic substrate after production order two a are handled are put into many targets of ultrahigh vacuum sputter coating machine, and plated film adopts the platinum target, and purity is 99.99%, the size Φ 60 * 2.5mm of target; Plated film vacuum tightness reaches 10
-5During Pa, toward the logical argon gas of sputtering chamber, ar pressure is 1.5Pa, adopts d.c. sputtering, and sputtering power is 32W, and the time is 30min, and the flow of argon gas is 15～20ml/min;
Production order two c, the AlN ceramic substrate of plated film is put into acetone soln soak, the dissolving photoresist, and discontinuity is little ultrasonic, till metal pattern is clear;
Step 3: the preparation of antarafacial heating electrode, make in the following order:
Production order three a, the AlN ceramic substrate after step 2 handled are put into many targets of ultrahigh vacuum sputter coating machine, and at AlN ceramic substrate back side platinum plating film, plated film adopts the platinum target, and purity is 99.99%, the size Φ 60 * 2.5mm of target; Plated film vacuum tightness reaches 10
-5During Pa, toward the logical argon gas of sputtering chamber, ar pressure is 1.5Pa, adopts d.c. sputtering, and sputtering power is 32W, and the time is 30min, and the flow of argon gas is 15～20ml/min;
Production order three b, laser ablation goes out the grid heating electrode, etching power 1200～1500W, etch rate 0.2～0.5mm/s, resistance trimming size R on the AlN ceramic substrate of platinum plating film overleaf
0Be 25～30 Ω;
Step 4: with the AlN ceramic substrate laser ablation that step 3 was handled, 4 isolation channels of etching around AlN ceramic substrate heating electrode, laser ablation power 1500～1800W, etch rate 0.1～0.5mm/s;
Step 5: with 800～1000 ℃ of annealing of AlN ceramic substrate, the 2～3h after the step 4 processing;
Step 6: the AlN ceramic substrate after the step 5 processing is utilized silk-screen printing technique or coating process, attached one deck gas sensitive material on the gas microsensor.
The AlN ceramic substrate that the AlN ceramic substrate that step 1 is chosen can adopt science and technology group 13 of China Electronics to be developed, thickness 0.3mm, thermal conductivity 180W/mk, surfaceness≤05 μ m; The thick more thermal loss of the AlN ceramic substrate of choosing is big more, and is thin more, and mechanical property is poor more; The big more heat conducting thermal loss of thermal conductivity is big more, and the more little thermal equilibrium of thermal conductivity is slow more; Surfaceness is big more, and the film continuity is poor more, and surfaceness membranelle adhesiveness more is poor more, easily comes off.
Can adopt the end treating fluid of BP212 (CP45) the type positive photoresist that Beijing Ke Hua Microtronic A/S produces in the step 2 during production order two a pre-service formulas, the purpose of doing like this is the adhesiveness that increases photoresist; The desk-top drying box of DG/20-002A type that can adopt Chongqing milky way experimental apparatus company to produce when dry; The H52-10 type sol evenning machine that can adopt Yuhuan county Li An Electronics Equipment Co., Ltd to produce when sparing glue; Can adopt the SB-401B type double-sided exposure machine of CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO. 45 RESEARCH INSTITUTE's development during exposure; The BP212 developer solution that can adopt Beijing Ke Hua Microtronic A/S to produce during development;
Many targets of JGP560C type ultrahigh vacuum sputter coating machine that can adopt when production order b and production order three a plated films Shenyang science and technology instrument plant to produce in the step 2;
Adopt Beijing CW-4B of Hua Laiyin photoelectricity technology corporation, Ltd. laser scribing means in the step 3 during laser ablation of production order three b and step 4; Etching power and speed can be selected according to actual conditions, guarantee that the isolation channel etching is saturating;
In the step 4 around the AlN ceramic substrate heating electrode 4 isolation channels of etching to obtain effect be to reduce the temperature cross conduction to scatter and disappear;
The effect of annealing in process is the continuity that improves film in the step 5, thereby has improved film resistance stability.
Claims (4)
1.AlN the semiconductor-type gas sensor of heat isolation panel double-side micro structure, it is characterized in that it comprises AlN ceramic substrate (1), two heating electrodes (2), front well heater (2-1), back heater (2-2), two signal electrodes (3), two signals collecting sheets (3-1), sensitive membrane (4) and hot isolation channel (5), on cornerwise four orientation of described AlN ceramic substrate (1), be etched with hot isolation channel (5), hot isolation channel (5) makes and respectively forms four isolated island projectioies (5-1) at AlN ceramic substrate (1) front and back, edge along (5) four orientation of hot isolation channel is etched with four through holes (1-1), AlN ceramic substrate (1) front is provided with heating electrode (2), front well heater (2-1), signal electrode (3) and signals collecting sheet (3-1), heating electrode (2) is applied in two through holes (1-1) of AlN ceramic substrate (1) one side, signal electrode (3) is applied in two other through hole (1-1), front well heater (2-1) is the middle snakelike arrangement architecture that has breach, two signals collecting sheets (3-1) insert the middle breach of snakelike arrangement architecture of front well heater (2-1), the pin of signals collecting sheet (3-1) is arranged in the hot isolation channel (5), and be connected with signal electrode (3), two pins of front well heater (2-1) are arranged in the hot isolation channel (5), and be connected with heating electrode (2), the part of inserting the snakelike arrangement architecture of heating electrode (2) at signals collecting sheet (3-1) has sensitive membrane (4), the back heater (2-2) at AlN ceramic substrate (1) back side is snakelike arrangement architecture, and be arranged on the centre position at AlN ceramic substrate (1) back side, two pins of back heater (22) are arranged in the hot isolation channel (5), and are connected with heating electrode (2).
2. the semiconductor-type gas sensor of AlN heat isolation panel double-side micro structure according to claim 1 is characterized in that AlN ceramic substrate (1) is square.
3. the semiconductor-type gas sensor of AlN heat isolation panel double-side micro structure according to claim 2, the length of side (d) that it is characterized in that AlN ceramic substrate (1) is 3.1～3.3mm, distance (l) between adjacent two through holes (1-1) outer boundary is 2.9～3.1mm, the isolated island projection (5-1) that is formed by hot isolation channel (5) is four isosceles trapezoids, wherein per two relative isosceles trapezoid congruences, the upper base (n1) of a pair of isolated island projection (5-1) isosceles trapezoid is 0.45～0.55mm, go to the bottom (m1) be 1.35～1.45mm, high (h1) is 0.25～0.35mm, another upper base (n2) to isolated island projection (5-1) isosceles trapezoid is 0.85～0.95mm, go to the bottom (m2) be 1.55～1.65mm, high (h2) is 0.45～0.55mm, the snakelike arrangement architecture length (k) of back heater (2-2) is 0.95～1.05mm, spacing (r) is 0.045～0.055mm, sensitive membrane (4) length (e) is 0.5～0.6mm, width (f) is 0.2～0.25mm, the length (p) of the snakelike arrangement architecture of front well heater (2-1) is 1.04～1.06mm, sensitive membrane (4) width (f) is less than the width of front well heater (2-1) central indentation, through hole (1-1) is a square, the length of side (w) is 0.3～0.5mm, and the distance (s) of the barbed portion in the middle of the snakelike arrangement architecture of two signals collecting sheets (3-1) insertion front well heaters (2-1) is 0.09～0.11mm.
4. the manufacture method of the semiconductor-type gas sensor of the described AlN heat isolation panel double-side micro structure of claim 1 is characterized in that concrete steps are as follows:
Step 1, selection AlN ceramic substrate, described AlN ceramic substrate thickness is 0.2～0.3mm, thermal conductivity is 180～270W/mk, surfaceness 0.1～0.5 μ m; Under 30～50khz frequency, described AlN ceramic substrate is carried out ultrasonic cleaning 10～20min with acetone, under 30～50khz frequency, carry out ultrasonic cleaning 10～15min, 120～150 ℃ of oven dry AlN ceramic substrates with alcohol.
Step 2: the preparation of sensor Pt metallic film signal electrode, make in the following order:
The end treating fluid that production order two a, the AlN ceramic substrate after step 1 handled are put into positive photoresist soaks 20～30min, put into 150～180 ℃ of dryings of drying box again, put into sol evenning machine gluing under 2500r/min～5000r/min speed again, put into baking oven then and dry 20～40min down at 80～100 ℃; With well heater pattern mask version is the plate-making figure, and 15～30s exposes on the double-sided exposure machine; Develop in the AlN ceramic substrate developer solution after the exposure 20～40s, rinsing 20～30s in the deionized water then; The AlN ceramic substrate that will scribble photoresist is at last put into drying box, toasts 30～40min under 100～120 ℃ of temperature;
Production order two b, the AlN ceramic substrate after production order two a are handled are put into many targets of ultrahigh vacuum sputter coating machine, and plated film adopts the platinum target, and purity is 99.99%, the size Φ 60 * 2.5mm of target; Plated film vacuum tightness reaches 10
-5During Pa, toward the logical argon gas of sputtering chamber, ar pressure is 1.5Pa, adopts d.c. sputtering, and sputtering power is 32W, and the time is 30min, and the flow of argon gas is 15～20ml/min;
Production order two c, the AlN ceramic substrate of plated film is put into acetone soln soak, the dissolving photoresist, and discontinuity is little ultrasonic, till metal pattern is clear;
Step 3: the preparation of antarafacial heating electrode, make in the following order:
Production order three a, the AlN ceramic substrate after step 2 handled are put into many targets of ultrahigh vacuum sputter coating machine, and at AlN ceramic substrate back side platinum plating film, plated film adopts the platinum target, and purity is 99.99%, the size Φ 60 * 2.5mm of target; Plated film vacuum tightness reaches 10
-5During Pa, toward the logical argon gas of sputtering chamber, ar pressure is 1.5Pa, adopts d.c. sputtering, and sputtering power is 32W, and the time is 30min, and the flow of argon gas is 15～20ml/min;
Production order three b, laser ablation goes out the grid heating electrode, etching power 1200～1500W, etch rate 0.2～0.5mm/s, resistance trimming size R on the AlN ceramic substrate of platinum plating film overleaf
0Be 25～30 Ω;
Step 4: with the AlN ceramic substrate laser ablation that step 3 was handled, 4 isolation channels of etching around AlN ceramic substrate heating electrode, laser ablation power 1500～1800W, etch rate 0.1～0.5mm/s;
Step 5: with 800～1000 ℃ of annealing of AlN ceramic substrate, the 2～3h after the step 4 processing;
Step 6: the AlN ceramic substrate after the step 5 processing is utilized silk-screen printing technique or coating process, attached one deck gas sensitive material on the gas microsensor.
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