CN106395728B - A kind of micro-bridge structure manganese cobalt nickel oxygen film infrared detector and preparation method thereof - Google Patents
A kind of micro-bridge structure manganese cobalt nickel oxygen film infrared detector and preparation method thereof Download PDFInfo
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- CN106395728B CN106395728B CN201610893671.4A CN201610893671A CN106395728B CN 106395728 B CN106395728 B CN 106395728B CN 201610893671 A CN201610893671 A CN 201610893671A CN 106395728 B CN106395728 B CN 106395728B
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- layer
- manganese cobalt
- cobalt nickel
- nickel oxygen
- oxygen film
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- YQOXCVSNNFQMLM-UHFFFAOYSA-N [Mn].[Ni]=O.[Co] Chemical compound [Mn].[Ni]=O.[Co] YQOXCVSNNFQMLM-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 238000002360 preparation method Methods 0.000 title abstract description 6
- 238000001514 detection method Methods 0.000 claims abstract description 9
- 229920001721 polyimide Polymers 0.000 claims description 35
- 239000004642 Polyimide Substances 0.000 claims description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 25
- 238000011161 development Methods 0.000 claims description 15
- 238000000137 annealing Methods 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 238000001259 photo etching Methods 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 238000000354 decomposition reaction Methods 0.000 claims description 5
- 238000002309 gasification Methods 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 150000003949 imides Chemical class 0.000 claims description 5
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 229910003978 SiClx Inorganic materials 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- MZZUATUOLXMCEY-UHFFFAOYSA-N cobalt manganese Chemical compound [Mn].[Co] MZZUATUOLXMCEY-UHFFFAOYSA-N 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 7
- 238000010276 construction Methods 0.000 abstract description 3
- 238000005538 encapsulation Methods 0.000 abstract description 3
- 238000002161 passivation Methods 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 25
- 230000018109 developmental process Effects 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 238000005576 amination reaction Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 230000004043 responsiveness Effects 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 241000790917 Dioxys <bee> Species 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B1/00—Devices without movable or flexible elements, e.g. microcapillary devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
- B81C1/00468—Releasing structures
- B81C1/00476—Releasing structures removing a sacrificial layer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
Abstract
The invention discloses a kind of micro-bridge structure manganese cobalt nickel oxygen film infrared detector and preparation method thereof.The micro-bridge structure of detector is a platform, manganese cobalt nickel oxygen film material deposition is made into infrared detector on the platform, the sacrifice layer of its micro-bridge structure takes direct-fired mode to remove, without redeposited one layer of passivation layer in manganese cobalt nickel oxygen detection member, and sacrifice layer can internally form the supporting construction of arch, it also simplify Making programme, cost is saved, improve the success rate of the work of device, simultaneously because its platform structure intensity is higher, it is not easily damaged in the step such as japanning, encapsulation in infrared device.
Description
Technical field
Patent of the present invention is related to infrared detector, specifically a kind of infrared detector with micro-bridge structure part and preparation method thereof.
Background technology
There is excellent negative temperature resistance characteristic with the non-refrigeration type infrared detector that manganese cobalt nickel oxygen film material makes,
The research and development of decades is have passed through, its performance is greatly improved.Because the reduction of thin-film material thickness can make infrared letter
Number absorption weaken, so general in technique increase infrared absorption using japanning；The reduction of thin-film material thickness also causes to visit
The thermal capacitance for surveying member reduces, so that its response time becomes big, responsiveness reduces, and therefore, should reduce the thermal conductivity factor of thin-film material
To keep response sensitivity, while increasing responsiveness.
Micro-bridge structure using low-resistance silicon as substrate improves infrared signal with that can reduce thermal conductivity on infrared detector
Absorptivity, the raising of sensitivity and detectivity for manganese cobalt nickel oxygen film material infrared detector plays an important role.In microbridge
, it is necessary to deposit one layer of passivation layer in detection member with PECVD in the manufacturing process of structure, to carry out reactive ion etching,
Expose sacrifice layer.Oxygen plasma dry etching is often selected in removal for sacrifice layer, easily causes plasma-induced damage
Wound, and be difficult to make the micro-bridge structure of high-aspect-ratio；And the reactive ion etching of slab construction is due to using high-energy ion bombardment
Physical etchings, chemical isotropic is poor.
The preparation method for the microbridge infrared detector that this patent is related to, can improve the intensity of microbridge, so as to spy
Survey first japanning, carry out being unlikely to damage micro-bridge structure during device encapsulation；It is cost-effective at the same time it can also simplify Making programme,
Improve the success rate of element manufacturing.
The content of the invention
The present invention is to make a kind of infrared detector with micro-bridge structure and preparation method thereof, and the first material of detection uses manganese cobalt nickel
Oxygen film.The sacrifice layer of the micro-bridge structure of this patent design can internally form the supporting construction of arch, improve microbridge knot
The intensity of structure, can be compatible with the manufacture craft of manganese cobalt nickel oxygen film infrared detector, and efficiently solves film-type
The response time length of infrared detector, the problem of responsiveness is low.
A kind of structure chart of infrared detector with micro-bridge structure is as shown in Figure 1, Figure 2 and Fig. 3.It includes manganese cobalt nickel oxygen film 1, dioxy
SiClx layer 2, silicon nitride layer 3, polyimide sacrificial layer 4 and low-resistance silicon substrate 5；Described infrared detector is from low-resistance silicon substrate 5
On be followed successively by polyimide sacrificial layer 4, silicon nitride layer 3, silicon dioxide layer 2 and manganese cobalt nickel oxygen film 1, in manganese cobalt nickel oxygen film
There are chromium and golden clad metal electrode 6 on 1；Wherein：
Described polyimide sacrificial layer 4 is domed sacrifice layer, and dome height is 1-3 μm, and sacrificial layer thickness is 1-3
μm, sacrifice layer and silica flat contact；
The thickness 50-500nm of described silicon nitride layer 3；
Described, the thickness 50-500nm of silicon dioxide layer 2；
0.1-2 μm of the thickness of described manganese cobalt nickel oxygen film 1.
Micro-bridge structure panel detector structure designed by the present invention is realized by processing step in detail below：
1) a strata imide membrane (PI) is precipitated in low resistance silicon chip as sacrifice layer, sacrificial layer thickness is 1-3 μm；
2) imidization processing is carried out under nitrogen atmosphere protection to polyimides；
3) to polyimides exposure, development, polyimides platform is produced；
4) silicon nitride that PECVD first deposits one layer is used, redeposited layer of silicon dioxide is used as structure sheaf；
5) certain thickness manganese cobalt nickel oxygen film is deposited using certain method, and film is made annealing treatment；
6) photoetching, burn into development treatment are carried out to the manganese cobalt nickel oxygen film after annealing, produced on polyimides platform
Manganese cobalt nickel oxygen film detection member；
7) using photoetching, development treatment, the photoresist of the electrode shape at cloudy quarter is produced, is plated using double ion sputtering method
Chrome gold electrode, thickness is respectively 30nm, 150nm；
8) photoresist is washed away with acetone, whole device is put into quick anneal oven and heated, heating-up temperature is in 400-800
DEG C, make polyimides decomposition gasification, remove polyimides.
The advantage of this patent is：Annealed by the way that device is placed in quick anneal oven to remove polyimide sacrificial layer,
It can avoid precipitating passivation layer, so as to reduce the follow-up step such as photoetching, reactive ion etching, simplify Making programme, save into
This；Meanwhile, the shape of micro-bridge structure can improve its intensity, can be kept when for the first japanning of detection, progress device encapsulation
Certain intensity improves the success rate of element manufacturing without destroyed.
Brief description of the drawings
Fig. 1 for the infrared detector with micro-bridge structure part structure before heating sacrifice layer profile, in figure：1st, manganese cobalt nickel oxygen is thin
Film, 2, silicon dioxide layer, 3, silicon nitride layer, 4, polyimide sacrificial layer, 5, low-resistance silicon substrate.
Fig. 2 is the profile for directly heating the microbridge infrared device structure after sacrifice layer.After heating, sacrifice layer is flat in microbridge
Platform is internally formed domes.
Fig. 3 for microbridge infrared device structure after plating Top electrode top view, in figure：6：Chromium and golden clad metal electrode.
Embodiment
Below in conjunction with accompanying drawing, this patent is described in further details by instantiation, but the protection domain of this patent
It is not limited to following instance.
Embodiment 1：
1 precipitates one layer of photosensitive polyimide film (ZKPI) as sacrifice layer in low resistance silicon chip, and the speed of sol evenning machine is adjusted
3000 turns, 20 seconds of system, the sacrificial layer thickness of institute's spin coating is 1 μm.
2 pairs of polyimides are incubated 60 minutes at 150 DEG C, 180 DEG C, 250 DEG C respectively under nitrogen atmosphere protection, make it sub-
Amination.
3 pairs of polyimides exposures, developments, produce 70 × 70 μm2Platform.
4 first deposit one layer of 50nm silicon nitride, one layer of 50nm of redeposition silica using PECVD.
5 use magnetron sputtering method to sputter manganese cobalt nickel oxygen film of a layer thickness for 100nm, and film is carried out at annealing
Reason, annealing temperature is 200 DEG C, 5 minutes.
Manganese cobalt nickel oxygen film after 6 pairs of annealing carries out photoetching, burn into development treatment, is produced on polyimides platform
50×50μm2Manganese cobalt nickel oxygen film detection member.
7, using photoetching, development treatment, produce the photoresist of the electrode shape at cloudy quarter, using the chromium plating of double ion sputtering method/
Gold electrode, thickness is respectively 30nm, 150nm.
8 wash away photoresist with acetone, and whole device is put into quick anneal oven, are heated 10 minutes at 400 DEG C, make to gather
Acid imide decomposition gasification, removes polyimides.
Embodiment 2：
1 precipitates one layer of photosensitive polyimide film (ZKPI) as sacrifice layer in low resistance silicon chip, and the speed of sol evenning machine is adjusted
3000 turns, 20 seconds of system, the sacrificial layer thickness of institute's spin coating is 2 μm.
2 pairs of polyimides are incubated 60 minutes at 150 DEG C, 180 DEG C, 250 DEG C respectively under nitrogen atmosphere protection, make it sub-
Amination.
3 pairs of polyimides exposures, developments, produce 70 × 70 μm2Platform.
4 first deposit one layer of 200nm silicon nitride, one layer of 200nm of redeposition silica using PECVD.
5 use magnetron sputtering method to sputter manganese cobalt nickel oxygen film of a layer thickness for 700nm, and film is carried out at annealing
Reason, annealing temperature is 200 DEG C, 5 minutes.
Manganese cobalt nickel oxygen film after 6 pairs of annealing carries out photoetching, burn into development treatment, is produced on polyimides platform
50×50μm2Manganese cobalt nickel oxygen film detection member.
7, using photoetching, development treatment, produce the photoresist of the electrode shape at cloudy quarter, using the chromium plating of double ion sputtering method/
Gold electrode, thickness is respectively 30nm, 150nm.
8 wash away photoresist with acetone, and whole device is put into quick anneal oven, are heated 10 minutes at 500 DEG C, make to gather
Acid imide decomposition gasification, removes polyimides.
Embodiment 3：
1 precipitates one layer of photosensitive polyimide film (ZKPI) as sacrifice layer in low resistance silicon chip, and the speed of sol evenning machine is adjusted
3000 turns, 20 seconds of system, the sacrificial layer thickness of institute's spin coating is 3 μm.
2 pairs of polyimides are incubated 60 minutes at 150 DEG C, 180 DEG C, 250 DEG C respectively under nitrogen atmosphere protection, make it sub-
Amination.
3 pairs of polyimides exposures, developments, produce 70 × 70 μm2Platform.
4 first deposit one layer of 500nm silicon nitride, one layer of 500nm of redeposition silica using PECVD.
5 use magnetron sputtering method to sputter a layer thickness for 2 μm of manganese cobalt nickel oxygen film, and film is made annealing treatment,
Annealing temperature is 200 DEG C, 5 minutes.
Manganese cobalt nickel oxygen film after 6 pairs of annealing carries out photoetching, burn into development treatment, is produced on polyimides platform
50×50μm2Manganese cobalt nickel oxygen film detection member.
7, using photoetching, development treatment, produce the photoresist of the electrode shape at cloudy quarter, using the chromium plating of double ion sputtering method/
Gold electrode, thickness is respectively 30nm, 150nm.
8 wash away photoresist with acetone, and whole device is put into quick anneal oven, are heated 10 minutes at 800 DEG C, make to gather
Acid imide decomposition gasification, removes polyimides.
Claims (2)
1. a kind of micro-bridge structure manganese cobalt nickel oxygen film infrared detector, including manganese cobalt nickel oxygen film (1), silicon dioxide layer (2), nitrogen
SiClx layer (3), polyimide sacrificial layer (4) and low-resistance silicon substrate (5)；It is characterized in that：
Described infrared detector is followed successively by polyimide sacrificial layer (4), silicon nitride layer (3), two from low-resistance silicon substrate (5)
Silicon oxide layer (2) and manganese cobalt nickel oxygen film (1), there is chromium and golden clad metal electrode (6) in manganese cobalt nickel oxygen film (1)；
Described polyimide sacrificial layer (4) is domed sacrifice layer, and dome height is 1-3 μm, and sacrificial layer thickness is 1-3 μ
M, sacrifice layer and silica flat contact；
The thickness 50-500nm of described silicon nitride layer (3)；
The thickness 50-500nm of described silicon dioxide layer (2)；
0.1-2 μm of the thickness of described manganese cobalt nickel oxygen film (1).
2. a kind of prepare a kind of method of micro-bridge structure manganese cobalt nickel oxygen film infrared detector as claimed in claim 1, it is special
Levy and be that method and step is as follows：
1) a strata imide membrane (PI) is precipitated in low resistance silicon chip as sacrifice layer, sacrificial layer thickness is 1-3 μm；
2) imidization processing is carried out under nitrogen atmosphere protection to polyimides；
3) to polyimides exposure, development, polyimides platform is produced；
4) silicon nitride that PECVD first deposits one layer is used, redeposited layer of silicon dioxide is used as structure sheaf；
5) certain thickness manganese cobalt nickel oxygen film is deposited using certain method, and film is made annealing treatment；
6) photoetching, burn into development treatment are carried out to the manganese cobalt nickel oxygen film after annealing, manganese cobalt is produced on polyimides platform
Nickel oxygen film detection member；
7) using photoetching, development treatment, the photoresist of the electrode shape at cloudy quarter is produced, chrome gold is plated using double ion sputtering method
Electrode, thickness is respectively 30nm, 150nm；
8) photoresist is washed away with acetone, whole device is put into quick anneal oven and heated, heating-up temperature makes at 400-800 DEG C
Polyimides decomposition gasification, removes polyimides.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610538776.8A CN106044696A (en) | 2016-07-11 | 2016-07-11 | Infrared detector with micro-bridge structure made of manganese-cobalt-nickel-oxygen film and manufacturing method thereof |
| CN2016105387768 | 2016-07-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106395728A CN106395728A (en) | 2017-02-15 |
| CN106395728B true CN106395728B (en) | 2017-08-25 |
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| CN201610538776.8A Pending CN106044696A (en) | 2016-07-11 | 2016-07-11 | Infrared detector with micro-bridge structure made of manganese-cobalt-nickel-oxygen film and manufacturing method thereof |
| CN201610893671.4A Active CN106395728B (en) | 2016-07-11 | 2016-10-13 | A kind of micro-bridge structure manganese cobalt nickel oxygen film infrared detector and preparation method thereof |
| CN201621119724.9U Withdrawn - After Issue CN206142814U (en) | 2016-07-11 | 2016-10-13 | Microbridge structure manganese cobalt nickel oxygen film infrared detector |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610538776.8A Pending CN106044696A (en) | 2016-07-11 | 2016-07-11 | Infrared detector with micro-bridge structure made of manganese-cobalt-nickel-oxygen film and manufacturing method thereof |
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| CN106044696A (en) * | 2016-07-11 | 2016-10-26 | 中国科学院上海技术物理研究所 | Infrared detector with micro-bridge structure made of manganese-cobalt-nickel-oxygen film and manufacturing method thereof |
| CN109238475A (en) * | 2018-08-20 | 2019-01-18 | 中国科学院上海技术物理研究所 | There are the manganese cobalt nickel oxygen thermistor detector and method of bent support leg micro-bridge structure |
| CN110672211B (en) * | 2019-09-11 | 2020-11-20 | 中国科学院上海技术物理研究所 | Nano-gold modified non-refrigeration infrared detector and manufacturing method thereof |
| CN110793648A (en) * | 2019-11-11 | 2020-02-14 | 中国科学院上海技术物理研究所 | Aerogel heat insulation structure broadband infrared detector and preparation method thereof |
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| GB0605576D0 (en) * | 2006-03-20 | 2006-04-26 | Oligon Ltd | MEMS device |
| CN101298313A (en) * | 2008-05-30 | 2008-11-05 | 中国科学院上海技术物理研究所 | Technological process for quickly releasing edge millimeter-level large area film |
| CN102732848B (en) * | 2012-06-25 | 2014-07-30 | 中国科学院上海技术物理研究所 | Method for preparing single oriented manganese cobalt nickel oxygen film by magnetron sputtering |
| CN103193190B (en) * | 2013-04-11 | 2015-07-29 | 电子科技大学 | A kind of infrared-Terahertz two waveband detector array micro-bridge structure and preparation method thereof |
| CN106044696A (en) * | 2016-07-11 | 2016-10-26 | 中国科学院上海技术物理研究所 | Infrared detector with micro-bridge structure made of manganese-cobalt-nickel-oxygen film and manufacturing method thereof |
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2016
- 2016-07-11 CN CN201610538776.8A patent/CN106044696A/en active Pending
- 2016-10-13 CN CN201610893671.4A patent/CN106395728B/en active Active
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Also Published As
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| CN106044696A (en) | 2016-10-26 |
| CN106395728A (en) | 2017-02-15 |
| CN206142814U (en) | 2017-05-03 |
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