CN109786496A - A kind of micro-structure Si-based photodetectors and preparation method thereof - Google Patents
A kind of micro-structure Si-based photodetectors and preparation method thereof Download PDFInfo
- Publication number
- CN109786496A CN109786496A CN201811635787.3A CN201811635787A CN109786496A CN 109786496 A CN109786496 A CN 109786496A CN 201811635787 A CN201811635787 A CN 201811635787A CN 109786496 A CN109786496 A CN 109786496A
- Authority
- CN
- China
- Prior art keywords
- layer
- type
- electrode
- micro
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to detecting technique more particularly to a kind of micro-structure Si-based photodetectors.The micro-structure Si-based photodetectors, including silicon intrinsic layer, P-type layer, N-type microstructured layers, ring-shaped P+Type layer, first electrode, second electrode, layer of dielectric material and N+Type silicon substrate, the P-type layer and ring-shaped P+Type layer is respectively positioned on the upper surface of silicon intrinsic layer, and the N-type microstructured layers are located at below silicon intrinsic layer, the ring-shaped P+Type layer is located at the surrounding of the P-type layer, and first electrode is located at the P-type layer and P+The top of type layer, second electrode is located at the top of N-type microstructured layers and is located at the surrounding of silicon intrinsic layer, the second electrode and silicon intrinsic layer to be arranged at the top interval of N-type microstructured layers, and the layer of dielectric material is located at the lower section of N-type microstructured layers, the N+Type silicon substrate is located at the lower section of layer of dielectric material.
Description
Technical field
The present invention relates to detecting techniques more particularly to a kind of micro-structure Si-based photodetectors and preparation method thereof.
Background technique
Compared with the compound semiconductor lights electric explorer part such as InGaAs, Si-based photodetectors part have technical maturity,
The many merits such as integrated level is high, cheap, environment resistant ability is strong, therefore it is widely used in optoelectronic switch, laser ranging tracking, position
Move the fields such as sensing.But since silicon has wider native band gap (1.12ev), using the photodetector of its preparation big
It is weaker in the near infrared band photoelectric respone of 1000nm.Therefore Si-based photodetectors part answering near infrared band is limited
With.Recently it is found that micro-structure silica-base material can make up for it the deficiency of traditional silicon materials, enhance silica-base material in near-infrared wave
The absorption of section, to improve it in the photoelectric respone of near infrared band.So-called micro-structure silica-base material, which refers to, utilizes femtosecond laser
It is micro- that the methods of processing, chemical attack prepare the micro-nano magnitude with the shapes such as taper, porous on traditional silica-base material surface
Structure.Over-saturation by reducing the multiple reflections and micro-structure surface of surface reflection, light between micro-structure, which is adulterated, to be absorbed
Etc. modes, micro-structure can enhance the near infrared absorption of silica-base material, improve Si-based photodetectors near infrared band
Photoelectric respone.
At present for common micro-structure Si-based photodetectors, it generally can be divided into two kinds with position existing for micro-structure,
A kind of is micro-structure preparation in the upper surface of detector, the i.e. photosurface of detector, and another kind is that micro-structure is prepared in detector
The lower surface of part.Although both detectors can enhance the photoelectric respone of near infrared band, current two kinds of micro- knots
Structure Si-based photodetectors there are the shortcomings that it is as follows: if micro-structure is located on the photosurface of detector, one side micro-structure
Shape influences the deposition of photosurface high-quality surface defect passivation layer, and the PN junction of another aspect micro-structure range finder is very
Closely, micro-structure surface defect is more, and these two issues are easy to cause the dark current of detector to increase；It is visited if micro-structure is located at
The bottom of device is surveyed, it farther out, is unfavorable for the conversion of photoelectric current apart from the PN junction of photosurface and detector, when silicon base is thicker,
Also need higher bias voltage.
Summary of the invention
Present invention seek to address that the dark current of detector increases in the prior art, or it is unfavorable for the conversion of photoelectric current and works as silicon
The technical issues of higher bias voltage is needed when substrate is thicker provides a kind of micro-structure Si-based photodetectors.
The present invention provides a kind of micro-structure Si-based photodetectors of embodiment, and the micro-structure base photodetector includes
Silicon intrinsic layer, P-type layer, N-type microstructured layers, ring-shaped P+Type layer, first electrode, second electrode, layer of dielectric material and N+Type silicon lining
Bottom, the P-type layer and ring-shaped P+Type layer is respectively positioned on the upper surface of silicon intrinsic layer, and the N-type microstructured layers are located under silicon intrinsic layer
Side, the ring-shaped P+Type layer is located at the surrounding of the P-type layer, and first electrode is located at the P-type layer and P+The top of type layer, second
Electrode is located at the top of N-type microstructured layers and is located at the surrounding of silicon intrinsic layer, and the second electrode and silicon intrinsic layer are in the micro- knot of N-type
The top interval of structure layer is arranged, and the layer of dielectric material is located at the lower section of N-type microstructured layers, the N+Type silicon substrate is located at medium
The lower section of material layer.
Micro-structure Si-based photodetectors of the invention, by being inserted into microstructured layers in the middle position of the detector,
So that the detector can make up for it traditional silicon detector disadvantage weak to near-infrared absorption, increase the absorption of near infrared light,
Silicon detector highly effective can be improved in the photoelectric respone of near infrared light wave band；Meanwhile in the middle position of the detector
Upper surface of the microstructured layers of insertion apart from the detector farther out, can be effectively reduced the dark current of the detector；In addition
The relatively thin thinner thickness for making silicon intrinsic layer of depletion region formed in provided buried layer micro-structure Si-based photodetectors, has
It works conducive under low bias voltage, and higher response speed can be obtained.
The present invention also provides a kind of preparation method of the micro-structure Si-based photodetectors of embodiment, the preparation method packet
Include following steps:
Step 1: in the intrinsic substrate lower surface of silicon, form n-type doping layer using phosphorus re-diffusion, then by femtosecond laser or
Person's chemical corrosion method prepares micro-structure in n-type doping layer, forms N-type microstructured layers；
Step 2: in the lower section of N-type microstructured layers, using physics or chemical institute phase silicon oxide layer deposited to form medium
Material layer after carrying out polishing reduction processing to layer of dielectric material, bonds the N in the lower section of layer of dielectric material using binding technique+Type silicon substrate；
Step 3: reduction processing is carried out to silicon intrinsic layer upper surface；
Step 4: in silicon intrinsic layer upper surface cvd silicon oxide mask layer, hiding table on silicon intrinsic layer using photoetching process
Face photosurface region, then falls the intrinsic silicon layer in other regions by reactive ion beam etching (RIBE)；
Step 5: in silicon intrinsic layer upper surface cvd silicon oxide mask layer, making p type island region figure by lithography, utilize boron diffusing, doping
Or ion implanting forms P-type layer；Then P is made by lithography on silicon intrinsic layer 1+Type area figure is infused using boron diffusing, doping or ion
Enter to form P+Type layer；
Step 6: making first electrode area, P-type layer and P by lithography on N-type microstructured layers+Second electrode is made by lithography on type layer
Region, the first electrode area and the second electrode region distinguish deposited metal film with formed first electrode and second electrode and
Metallization heat treatment is carried out to first electrode and second electrode.
The preparation method of micro-structure Si-based photodetectors of the invention, by being inserted into the middle position of the detector
Microstructured layers increase near-infrared so that the detector can make up for it traditional silicon detector disadvantage weak to near-infrared absorption
The absorption of light highly effective can improve silicon detector in the photoelectric respone of near infrared light wave band；Meanwhile in the detector
Upper surface of the microstructured layers of middle position insertion apart from the detector farther out, can be effectively reduced the dark electricity of the detector
Stream；In addition the relatively thin thickness for making silicon intrinsic layer of depletion region formed in provided buried layer micro-structure Si-based photodetectors
It is relatively thin, be conducive to work under low bias voltage, and higher response speed can be obtained.
Detailed description of the invention
Fig. 1 is a kind of the schematic diagram of the section structure of embodiment of micro-structure Si-based photodetectors of the present invention；
Fig. 2 is a kind of flow chart of embodiment of preparation method of micro-structure Si-based photodetectors of the present invention.
Specific embodiment
Specific embodiments of the present invention will be further explained with reference to the accompanying drawing.
It is that microstructured layers are placed in entire detector device that the present invention, which provides a kind of buried layer micro-structure Si-based photodetectors,
The centre of structure, without being placed in detector upper surface or lower surface.Its, response high near infrared band Photoresponse
The features such as speed is fast, dark current is low, operating voltage is low, and preparation process is compatible with existing silicon technology.
The present invention provides a kind of micro-structure Si-based photodetectors of embodiment, as shown in Figure 1, the micro-structure base photoelectricity
Detector includes silicon intrinsic layer 1, P-type layer 2, N-type microstructured layers 3, ring-shaped P+Type layer 4, first electrode 5, second electrode 6, medium
Material layer 7 and N+Type silicon substrate 8, the P-type layer 2 and ring-shaped P+Type layer 4 is respectively positioned on the upper surface of silicon intrinsic layer 1, and the N-type is micro-
Structure sheaf 3 is located at 1 lower section of silicon intrinsic layer, the ring-shaped P+Type layer 4 is located at the surrounding of the P-type layer 2, and first electrode 5 is located at institute
State P-type layer 2 and P+The top of type layer 4, second electrode 6 are located at the top of N-type microstructured layers 3 and are located at the surrounding of silicon intrinsic layer,
The second electrode and silicon intrinsic layer are arranged at the top interval of N-type microstructured layers, and the layer of dielectric material is located at N-type micro-structure
The lower section of layer, the N+ type silicon substrate are located at the lower section of layer of dielectric material.Layer of dielectric material 7 described in Fig. 1 is silicon oxide layer,
Photodetector photosurface for structure described in the schematic diagram drawn upper surface；This detector is PIN type, upper surface photosurface
For P-type layer, micro-structure preparation is formed in n-type region i.e. lower surface, i.e. back surface micro-structure, which helps to mention
Rise the infrared corresponding of Si base detector, at the same its positioned back surface for detector dark current characteristic without influence.
Micro-structure Si-based photodetectors of the invention, by being inserted into microstructured layers in the middle position of the detector,
So that the detector can make up for it traditional silicon detector disadvantage weak to near-infrared absorption, increase the absorption of near infrared light,
Silicon detector highly effective can be improved in the photoelectric respone of near infrared light wave band；Meanwhile in the middle position of the detector
Upper surface of the microstructured layers of insertion apart from the detector farther out, can be effectively reduced the dark current of the detector；In addition
The relatively thin thinner thickness for making silicon intrinsic layer of depletion region formed in provided buried layer micro-structure Si-based photodetectors, has
It works conducive under low bias voltage, and higher response speed can be obtained.
In specific implementation, the microstructured layers 3 are located at the rear of PN junction, and the photosurface with the photodetector
It is oppositely arranged, is silicon oxide layer at the rear of microstructured layers 3.
The surface shape of the microstructured layers 3 is taper, paraboloidal, spheric, the one of which in hole type, certainly
The surface of microstructured layers 3 is not limited thereto described.Specifically, the underside shape of microstructured layers 3 be taper, paraboloidal,
Spheric, the one of which in hole type.
The typical sizes of the N-type microstructured layers 3 are as follows: 2 μm~5 μm of taper (hole) micro-structure diameter, 0.5 μm~3 μ of height
M, 1 μm~5 μm of the period.Specifically, the pillar of the microstructured layers 3 or the diameter of hole are 0.5 μm~2 μm, height or depth
It is 0.5 μm~2 μm, the distance between two adjacent pillars or the hole center of circle is 1 μm~5 μm.
Specifically, the layer of dielectric material 7 can be the silicon oxide layer mutually deposited by physics or chemistry or other are situated between
Matter layer material, material thickness are 300nm~500nm.
Specifically, the resistivity of the silicon intrinsic layer 1 is the 3000 Ω cm of Ω cm~5000, with a thickness of 20 μm~50 μ
m。
Specifically, the P-type layer 2 is boron diffusing, doping or P layers of ion implantation doping, doping concentration is 1 × 1016ion/
cm3~1 × 1017ion/cm3, junction depth is 2 μm~5 μm.
Specifically, the P+Type layer 4 is boron diffusing, doping or ion implantation doping P+Layer, doping concentration are 5 × 1018ion/
cm3~5 × 1019ion/cm3, junction depth is 2.5 μm~5.5 μm.
Specifically, the first electrode 5 and second electrode 6 are metal electrode, the material of first electrode 5 and second electrode 6
For aluminium, gold, silver or chromium aluminium, with a thickness of 100nm~500nm.As long as the contact of first electrode 5 is good, can be in the P
Type layer 2 and the P+Setting is spaced on type layer 4, the first electrode 5 can also be ring structure.The structure of second electrode 6 is also
It is such.
Specifically, the N+8 resistivity of type silicon substrate be the 0.001 Ω cm of Ω cm~0.01, with a thickness of 400 μm~
600μm。
In specific implementation, the present invention also provides a kind of preparation method of micro-structure Si-based photodetectors, the preparations
Method the following steps are included:
Step 1: in the intrinsic substrate lower surface of silicon, form n-type doping layer using phosphorus re-diffusion, then by femtosecond laser or
Person's chemical corrosion method prepares micro-structure in n-type doping layer, forms N-type microstructured layers；
Step 2: in the lower section of N-type microstructured layers, using physics or chemical institute phase silicon oxide layer deposited to form medium
Material layer after carrying out polishing reduction processing to layer of dielectric material, bonds the N in the lower section of layer of dielectric material using binding technique+Type silicon substrate；
Step 3: reduction processing is carried out to silicon intrinsic layer upper surface；
Step 4: in silicon intrinsic layer upper surface cvd silicon oxide mask layer, hiding table on silicon intrinsic layer using photoetching process
Then the silicon intrinsic layer in other regions is fallen in face photosurface region by reactive ion beam etching (RIBE)；
Step 5: in silicon intrinsic layer upper surface cvd silicon oxide mask layer, making p type island region figure by lithography, utilize boron diffusing, doping
Or ion implanting forms P-type layer；Then P is made by lithography on silicon intrinsic layer 1+Type area figure is infused using boron diffusing, doping or ion
Enter to form P+Type layer；
Step 6: making first electrode area, P-type layer and P by lithography on N-type microstructured layers+Second electrode is made by lithography on type layer
Region, the first electrode area and the second electrode region distinguish deposited metal film with formed first electrode and second electrode and
Metallization heat treatment is carried out to first electrode and second electrode.
In specific implementation, for step 1 specifically: in intrinsic 1 lower surface of substrate of silicon, form N-type using phosphorus re-diffusion
Then doped layer prepares micro-structure by femtosecond laser or chemical corrosion method in n-type doping layer, form the micro- knot of N-type
Structure layer 3, typical sizes are as follows: 2 μm~5 μm of taper (hole) micro-structure diameter, 2 μm~5 μm, 2 μm~5 μm of the period of height.
For step 2 specifically: thick using physics or chemical institute phase silicon oxide layer deposited 7 on N-type microstructured layers 3
Degree is 3 μm~6 μm, carries out polishing reduction processing to it, and it is 2.5 μm~5.5 μm that its thickness, which is thinned, after, utilize binding technique
It is bonded in N+On type silicon substrate 8.
For step 3 specifically: carry out reduction processing to 1 upper surface of silicon intrinsic layer, its thickness is thinned for 20 μm~50 μ
m。
For step 4 specifically: in 1 upper surface cvd silicon oxide mask layer of silicon intrinsic layer, hidden using photoetching process
1 upper surface photosurface region of silicon intrinsic layer, then falls the intrinsic silicon layer in other regions by reactive ion beam etching (RIBE).
For step 5 specifically: in 1 upper surface cvd silicon oxide mask layer of silicon intrinsic layer, make p type island region figure by lithography, benefit
P layer 2 is formed with boron diffusing, doping or ion implanting, doping concentration is 1 × 1016ion/cm3~1 × 1017ion/cm3, junction depth 2
μm~5 μm.Then P is made by lithography again+Type area figure forms P using boron diffusing, doping or ion implanting+Layer 4, doping concentration be 5 ×
1018ion/cm3~5 × 1019ion/cm3, junction depth is 2.5 μm~5.5 μm.
For step 6 specifically: in N-type microstructured layers 3 and P+Type layer 4 makes electrode zone by lithography above, deposits respectively
100nm~500nm metallic film forms metal electrode, finally carries out metallization heat treatment.
In specific implementation, before step 1, it needs to carry out silicon intrinsic layer 1 chemical cleaning, what silicon intrinsic layer 1 was selected
Be with a thickness of 300 μm, resistivity be 3000 Ω cm,<100>crystal orientation twin polishing HR-Si substrate, chemical cleaning select
It is by solution such as diluted hydrochloric acid, hydrofluoric acid or acetone.
It can be further for step 2 specifically: phosphorus re-diffusion is carried out to the lower surface of silicon intrinsic layer 1 and adulterates to form N-type
Then doped layer prepares micro-structure by femtosecond laser processing in n-type doping layer, forms N-type taper microstructure layer 3, N-type
The diameter of taper microstructure layer 3 is 3 μm, highly 2 μm, 3 μm of the period.Preparation low-resistance N+Type monocrystalline substrate 8, resistivity are
Silicon oxide layer 7 is fully bonded to N using binding technique with a thickness of 600 μm by 0.01 Ω cm+On type silicon substrate 8
It can be further for step 3 specifically: on N-type microstructured layers 3, utilize plasma reinforced chemical vapour deposition
Technology silicon oxide layer deposited 7, deposition thickness are 4 μm, carry out polishing reduction processing to it, it is 3.5 μm that its thickness, which is thinned,.
It can be further for step 4 specifically: 1 upper surface of silicon intrinsic layer is subtracted using cmp method
Thin processing, it is 30 μm that its thickness, which is thinned,.In 1 upper surface cvd silicon oxide mask layer of silicon intrinsic layer, covered using photoetching process
Firmly 1 upper surface photosurface region of silicon intrinsic layer, then falls the intrinsic silicon layer in other regions by reactive ion beam etching (RIBE).In silicon sheet
1 upper surface cvd silicon oxide mask layer of layer is levied, makes p type island region figure by lithography, forms P layer 2 using boron diffusing, doping or ion implanting,
Doping concentration is 1 × 1017ion/cm3, junction depth is 3 μm.
It can be further for step 5 specifically: in 1 upper surface cvd silicon oxide mask layer of silicon intrinsic layer, then light again
Carve P+Type area figure forms P using boron diffusing, doping or ion implanting+Layer 4, doping concentration are 1 × 1019ion/cm3Junction depth is
3.5μm。
It can be further for step 6 specifically: photoetching process is utilized, in P+Type layer 4 makes the first region by lithography above
Domain, 5nm chromium thin film is deposited using electron beam evaporation technique respectively and 100nm gold thin film forms first electrode；Then micro- in N-type again
Structure sheaf 3 makes the second electrode region by lithography above, forms second electrode using electron beam evaporation technique deposition 300nm aluminium film.
And move to detector in tube furnace, the heat treatment of metallization in 10 minutes is carried out in 400 DEG C of high temperature under nitrogen atmosphere and is obtained finally
Micro-structure Si-based photodetectors.
The above embodiments and description only illustrate the principle of the present invention and most preferred embodiment, is not departing from this
Under the premise of spirit and range, various changes and improvements may be made to the invention, these changes and improvements both fall within requirement and protect
In the scope of the invention of shield.
Claims (10)
1. a kind of micro-structure Si-based photodetectors, which is characterized in that the micro-structure base photodetector include silicon intrinsic layer,
P-type layer, N-type microstructured layers, ring-shaped P+Type layer, first electrode, second electrode, layer of dielectric material and N+Type silicon substrate, the p-type
Layer and ring-shaped P+Type layer is respectively positioned on the upper surface of silicon intrinsic layer, and the N-type microstructured layers are located at below silicon intrinsic layer, the annular
P+Type layer is located at the surrounding of the P-type layer, and first electrode is located at the P-type layer and P+The top of type layer, second electrode are located at N-type
The top of microstructured layers and the surrounding for being located at silicon intrinsic layer, the second electrode and silicon intrinsic layer are in the top of N-type microstructured layers
Interval setting, the layer of dielectric material are located at the lower section of N-type microstructured layers, the N+Type silicon substrate is located under layer of dielectric material
Side.
2. micro-structure Si-based photodetectors as described in claim 1, which is characterized in that the microstructured layers are located at PN junction
Rear, and be oppositely arranged with the photosurface of the photodetector, it is silicon oxide layer at the rear of microstructured layers.
3. micro-structure Si-based photodetectors as claimed in claim 1 or 2, which is characterized in that the surface of the microstructured layers
Shape are as follows: taper, paraboloidal, spheric, the one of which in hole type.
4. micro-structure Si-based photodetectors as claimed in claim 3, which is characterized in that the microstructured layers pillar or hole
Diameter be 0.5 μm~2 μm, height or depth are 0.5 μm~2 μm, and distance between two adjacent pillars or the hole center of circle is 1 μm
~5 μm.
5. micro-structure Si-based photodetectors as described in claim 1, which is characterized in that the layer of dielectric material is by physics
Or the chemistry silicon oxide layer or other dielectric layer materials that mutually deposit, the material thickness of layer of dielectric material for 300nm~
500nm。
6. micro-structure Si-based photodetectors as described in claim 1, which is characterized in that the resistivity of the silicon intrinsic layer is
The 3000 Ω cm of Ω cm~5000, with a thickness of 20 μm~50 μm.
7. micro-structure Si-based photodetectors as described in claim 1, which is characterized in that the P-type layer is boron diffusing, doping
Or P layers of ion implantation doping, doping concentration is 1 × 1016ion/cm3~1 × 1017ion/cm3, junction depth is 2 μm~5 μm.
8. micro-structure Si-based photodetectors as described in claim 1, which is characterized in that the P+Type layer is boron diffusing, doping
Or ion implantation doping P+Layer, doping concentration are 5 × 1018ion/cm3~5 × 1019ion/cm3, junction depth is 2.5 μm~5.5 μm.
9. micro-structure Si-based photodetectors as described in claim 1, which is characterized in that the first electrode and second electrode
Be metal electrode, the material of the first electrode and second electrode all can be aluminium, gold, silver or chromium aluminium, and first electricity
Pole and second electrode thickness are 100nm~500nm.
10. a kind of preparation method of micro-structure Si-based photodetectors, which is characterized in that the preparation method includes following step
It is rapid:
Step 1: in the intrinsic substrate lower surface of silicon, forming n-type doping layer using phosphorus re-diffusion, then pass through femtosecond laser or change
It learns caustic solution and prepares micro-structure in n-type doping layer, form N-type microstructured layers；
Step 2: in the lower section of N-type microstructured layers, using physics or chemical institute phase silicon oxide layer deposited to form dielectric material
Layer after carrying out polishing reduction processing to layer of dielectric material, bonds the N in the lower section of layer of dielectric material using binding technique+Type
Silicon substrate；
Step 3: reduction processing is carried out to silicon intrinsic layer upper surface；
Step 4: in silicon intrinsic layer upper surface cvd silicon oxide mask layer, hiding silicon intrinsic layer upper surface sense using photoetching process
Then the intrinsic silicon layer in other regions is fallen in smooth surface region by reactive ion beam etching (RIBE)；
Step 5: in silicon intrinsic layer upper surface cvd silicon oxide mask layer, make p type island region figure by lithography, using boron diffusing, doping or from
Son injection forms P-type layer；Then P is made by lithography on silicon intrinsic layer 1+Type area figure utilizes boron diffusing, doping or ion implanting shape
At P+Type layer；
Step 6: making first electrode area, P-type layer and P by lithography on N-type microstructured layers+The second electrode region is made by lithography on type layer,
The first electrode area and the second electrode region distinguish deposited metal film to form first electrode and second electrode and to
One electrode and second electrode carry out metallization heat treatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811635787.3A CN109786496A (en) | 2018-12-29 | 2018-12-29 | A kind of micro-structure Si-based photodetectors and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811635787.3A CN109786496A (en) | 2018-12-29 | 2018-12-29 | A kind of micro-structure Si-based photodetectors and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109786496A true CN109786496A (en) | 2019-05-21 |
Family
ID=66497952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811635787.3A Pending CN109786496A (en) | 2018-12-29 | 2018-12-29 | A kind of micro-structure Si-based photodetectors and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109786496A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6303967B1 (en) * | 1998-02-05 | 2001-10-16 | Integration Associates, Inc. | Process for producing an isolated planar high speed pin photodiode |
| CN102800717A (en) * | 2012-08-30 | 2012-11-28 | 中山大学 | PIN structural ultraviolet photoelectric detector for avalanche and preparation method thereof |
| CN105185845A (en) * | 2015-08-17 | 2015-12-23 | 电子科技大学 | Si-PIN photodetector introducing micro-structure silicon in P layer and N layer and preparation method thereof |
| CN105556680A (en) * | 2013-05-22 | 2016-05-04 | 王士原 | Microstructure enhanced absorption photosensitive devices |
| CN106057957A (en) * | 2016-08-01 | 2016-10-26 | 中国科学技术大学 | Avalanche photodiode with periodic nanostructure |
| CN106206831A (en) * | 2016-08-26 | 2016-12-07 | 电子科技大学 | Based on femtosecond laser ablation infrared enhancing Si PIN detector and preparation method thereof |
-
2018
- 2018-12-29 CN CN201811635787.3A patent/CN109786496A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6303967B1 (en) * | 1998-02-05 | 2001-10-16 | Integration Associates, Inc. | Process for producing an isolated planar high speed pin photodiode |
| CN102800717A (en) * | 2012-08-30 | 2012-11-28 | 中山大学 | PIN structural ultraviolet photoelectric detector for avalanche and preparation method thereof |
| CN105556680A (en) * | 2013-05-22 | 2016-05-04 | 王士原 | Microstructure enhanced absorption photosensitive devices |
| CN105185845A (en) * | 2015-08-17 | 2015-12-23 | 电子科技大学 | Si-PIN photodetector introducing micro-structure silicon in P layer and N layer and preparation method thereof |
| CN106057957A (en) * | 2016-08-01 | 2016-10-26 | 中国科学技术大学 | Avalanche photodiode with periodic nanostructure |
| CN106206831A (en) * | 2016-08-26 | 2016-12-07 | 电子科技大学 | Based on femtosecond laser ablation infrared enhancing Si PIN detector and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| YANG, HG 等: "An extending broadband near-infrared absorption of Si-based deep-trench microstructures", 《OPTICS COMMUNICATIONS》 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106784122B (en) | Photodetector and preparation method based on graphene/boron-doping silicon quantum dot/silicon | |
| CN106169516B (en) | A kind of silicon substrate UV photodetector based on graphene and preparation method thereof | |
| CN105405916B (en) | Silicon-based wide spectrum detector and preparation method therefor | |
| EP2380203B1 (en) | Solar cell | |
| CN105977338B (en) | Low-dark current PIN detector and its processing method | |
| CN101714591B (en) | Method for manufacturing silicon photoelectric diode | |
| CN105789347A (en) | GeSn-GeSi material based heterogeneous phototransistor and fabrication method thereof | |
| CN101527308B (en) | Plane-structure InGaAs array infrared detector | |
| CN104465853B (en) | Avalanche photodiode and manufacturing method thereof | |
| CN102903781A (en) | Silicon-based near infrared photoelectric detector structure and manufacturing method thereof | |
| CN104993009B (en) | Counter doping stops impurity band terahertz detector chip and preparation method thereof | |
| CN105789336B (en) | Alpha irradiation scintillator detector based on carborundum PIN diode structure | |
| CN205944122U (en) | Low dark current PIN detector | |
| CN103794673B (en) | Platinum silicon nanowires Infrared Detectors and preparation method thereof | |
| CN106252456B (en) | A kind of high-sensitivity phototransistors and its manufacture method | |
| CN105185845A (en) | Si-PIN photodetector introducing micro-structure silicon in P layer and N layer and preparation method thereof | |
| CN105845746B (en) | γ irradiation scintillator detectors based on carborundum PIN diode structure | |
| CN109786496A (en) | A kind of micro-structure Si-based photodetectors and preparation method thereof | |
| EP2013915A1 (en) | Bonded wafer avalanche photodiode and method for manufacturing same | |
| CN104701420A (en) | Manufacturing method of silicon-based ultraviolet intensified photodiode | |
| CN104505421B (en) | A kind of avalanche photodide with self-gravitation self-recovering function | |
| CN107240616B (en) | InGaAs/InP photistor infrared detectors with intrinsic layer structure | |
| CN109686805B (en) | Silicon-based high-speed high-response PIN photoelectric detector and manufacturing method thereof | |
| CN205863193U (en) | Low-dark current high speed PIN detector | |
| CN102376815A (en) | Silicon photoelectric diode and manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190521 |
|
| RJ01 | Rejection of invention patent application after publication |