CN103794673B - Platinum silicon nanowires Infrared Detectors and preparation method thereof - Google Patents
Platinum silicon nanowires Infrared Detectors and preparation method thereof Download PDFInfo
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- CN103794673B CN103794673B CN201410081602.4A CN201410081602A CN103794673B CN 103794673 B CN103794673 B CN 103794673B CN 201410081602 A CN201410081602 A CN 201410081602A CN 103794673 B CN103794673 B CN 103794673B
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- XRZCZVQJHOCRCR-UHFFFAOYSA-N [Si].[Pt] Chemical compound [Si].[Pt] XRZCZVQJHOCRCR-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 239000002070 nanowire Substances 0.000 title claims abstract description 43
- 238000002360 preparation method Methods 0.000 title description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 45
- 239000010703 silicon Substances 0.000 claims abstract description 45
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000010408 film Substances 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 26
- 229920005591 polysilicon Polymers 0.000 claims abstract description 26
- 239000010409 thin film Substances 0.000 claims abstract description 25
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 238000005516 engineering process Methods 0.000 claims description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- 239000004411 aluminium Substances 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 9
- 238000011065 in-situ storage Methods 0.000 claims description 9
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 9
- 238000001259 photo etching Methods 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 claims description 6
- 230000007797 corrosion Effects 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 6
- NICDRCVJGXLKSF-UHFFFAOYSA-N nitric acid;trihydrochloride Chemical compound Cl.Cl.Cl.O[N+]([O-])=O NICDRCVJGXLKSF-UHFFFAOYSA-N 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- -1 phosphonium ion Chemical class 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 5
- 239000003574 free electron Substances 0.000 abstract description 3
- 238000012536 packaging technology Methods 0.000 abstract description 3
- 230000005855 radiation Effects 0.000 description 4
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 229910021340 platinum monosilicide Inorganic materials 0.000 description 3
- 241000588731 Hafnia Species 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- SGUSHACRGOXFII-UHFFFAOYSA-N [Na].[Si].[Pt] Chemical compound [Na].[Si].[Pt] SGUSHACRGOXFII-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
Classifications
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- H01L31/035227—
-
- H01L31/1804—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Light Receiving Elements (AREA)
Abstract
A kind of platinum silicon nanowires Infrared Detectors, described platinum silicon nanowires Infrared Detectors comprises P type epitaxial silicon substrate layer, platinum silicon thin film photo-sensitive layer, P type polysilicon cap, antireflection film layer, and P type epitaxial silicon substrate layer, platinum silicon thin film photo-sensitive layer, P type polysilicon cap, antireflection film layer stack gradually together; Described platinum silicon thin film photo-sensitive layer is platinum silicon nanowires; The mode of operation of described platinum silicon nanowires Infrared Detectors adopts just according to mode.Advantageous Effects of the present invention is: utilize platinum silicon nanowires to increase absorptivity, and meanwhile, platinum silicon nanowires top exists great fringing field, produces avalanche multiplication effect, increases substantially the quantum efficiency of platinum infrared silicon detector; Increase P type polysilicon cap, the escape probability of photoproduction hot hole can be made to double, and prevent the movable charge in antireflection film layer and photoproduction free electron to exchange, reduce noise and the dark current of platinum infrared silicon detector; Detector adopts just according to mode, significantly simplifies packaging technology, improves the reliability of device.
Description
Technical field
The present invention relates to a kind of Infrared Detectors, particularly relate to a kind of platinum silicon nanowires Infrared Detectors and preparation method thereof.
Background technology
The PtSi infrared focal plane array device adopting PtSi/P-Si Schottky barrier detector to make has the features such as pixel integrated level is high, photoresponse uniformity is good, chip good stability, range of application is very extensive, but compare with InSb, HgTeCd Infrared Detectors, more than low 1 order of magnitude of platinum infrared silicon detector quantum efficiency; For many years, technical staff is devoted to the research improving platinum infrared silicon detector quantum efficiency always.
Summary of the invention
For the problem in background technology, the present invention proposes a kind of platinum silicon nanowires Infrared Detectors, its structure is: described platinum silicon nanowires Infrared Detectors comprises P type epitaxial silicon substrate layer, platinum silicon thin film photo-sensitive layer, P type polysilicon cap, antireflection film layer, and P type epitaxial silicon substrate layer, platinum silicon thin film photo-sensitive layer, P type polysilicon cap, antireflection film layer stack gradually together; Described platinum silicon thin film photo-sensitive layer is platinum silicon nanowires; The mode of operation of described platinum silicon nanowires Infrared Detectors adopts just according to mode.
The operation principle of aforementioned platinum silicon nanowires Infrared Detectors is: infrared radiation is incident from front, after antireflection film layer transmission, the infrared light that photon energy is less than Si energy gap arrives platinum silicon thin film photo-sensitive layer through P type polysilicon cap, and electron-hole pair is inspired in platinum silicon thin film photo-sensitive layer, the hot hole that energy exceedes barrier height crosses PtSi/P-Si potential barrier, enter P type epitaxial silicon substrate layer and P type polysilicon cap, this just makes the accumulation having electronics in platinum silicon thin film photo-sensitive layer, and cuniculate accumulation in P type epitaxial silicon substrate layer and P type polysilicon cap, P type epitaxial silicon substrate layer and the equal ground connection of P type polysilicon cap, in platinum silicon thin film photo-sensitive layer, the electronics of accumulation is collected by diode, complete the detection to infrared radiation, due to multiple reflections between the platinum silicon nanowires of Infrared in platinum silicon thin film photo-sensitive layer, add the absorptivity of platinum silicon thin film to infrared radiation, platinum silicon thin film photo-sensitive layer and the P type epitaxial silicon substrate layer of nanostructure form Schottky Barrier Contact, there is larger fringing field effect, produce larger fringe field, light induced electron generation avalanche multiplication effect, increases the quantum efficiency of detector, platinum silicon sodium rice increases one deck P type polysilicon cap, the escape probability of photoproduction hot hole can be made to double, and prevent the movable charge in antireflective coating and photoproduction free electron to exchange, reduce noise and the dark current of platinum infrared silicon detector, meanwhile, detector of the present invention adopts just according to mode, can realize ultraviolet, visible ray, medium-wave infrared multispectral sensing, compared with shining mode, except there is aforementioned advantages, also significantly simplifies packaging technology, improves the reliability of device with the back of the body.
Based on the conventional structure on existing Infrared Detectors, platinum silicon nanowires Infrared Detectors of the present invention is also provided with output diode, the resistance of P+ ditch, contact conductor, P+ diffusely with N guard ring.
In order to improve platinum silicon thin film photo-sensitive layer further to the absorptivity of infrared radiation, described P type epitaxial silicon substrate layer surface is also laminated with aluminium reflector layer; Through P type epitaxial silicon substrate layer transmit not by platinum silicon thin film photo-sensitive layer absorb infrared ray, by aluminium reflector layer reflect after, can again arrive platinum silicon nanowires photosensitive layer and be absorbed.
Preferably, described antireflection film layer adopts hafnia film.
Based on aforementioned device, the invention allows for a kind of platinum silicon nanowires Infrared Detectors manufacture method, its processing step is:
1) P type epitaxial silicon substrate layer is provided;
2) at the upper surface growth grid oxygen medium layer of P type epitaxial silicon substrate layer, at grid oxygen medium layer surface deposition silicon nitride medium layer;
3) boron diffusion technology is adopted on P type epitaxial silicon substrate layer, to form the resistance of P+ ditch and P+ diffusely;
4) phosphonium ion injection technology is adopted to form output diode and N guard ring respectively on P type epitaxial silicon substrate layer;
5) plasma etching industrial is adopted to be etched away by the silicon nitride medium layer within the scope of photosensitive area; Wet corrosion technique is adopted to be eroded by the grid oxygen medium layer within the scope of photosensitive area; Exposed P type epitaxial silicon substrate layer region is out photosensitive area window;
6) adopt ultra high vacuum sputtering technology at photosensitive area range of deposited platinum film and in-situ annealing; Adopt platinum assisted etch process wet etching photosensitive area window, form silicon nanowires, with chloroazotic acid etching away platinum film;
7) erode the natural oxidizing layer on silicon nanowires, adopt ultra high vacuum sputtering technology at photosensitive area deposit platinum film and in-situ annealing, silicon nanowires generates platinum silicon thin film, form platinum silicon nanowires, platinum silicon nanowires is platinum silicon thin film photo-sensitive layer; With the unreacted platinum film of chloroazotic acid etching away;
8) utilize pecvd process in the peripheral deposit low temperature silicon dioxide film in photosensitive area and photosensitive area;
9) photoetching process is adopted the low temperature silicon dioxide film within the scope of photosensitive area to be eroded;
10) adopt ultra high vacuum sputtering technology at photosensitive area and photosensitive area peripheral deposit P type polysilicon membrane, in-situ annealing, forms P type polysilicon cap.
11) method adopting corrosion to peel off, removes low-temperature silicon dioxide and the P type polysilicon membrane of periphery, photosensitive area;
12) magnetron sputtering technique deposit hafnium oxide antireflection film layer in P conformal polysilicon cap is adopted;
13) photoetching process is adopted to form fairlead;
14) utilize magnetron sputtering technique at detector front deposit aluminium film, photoetching forms contact conductor;
15) polished backside, utilizes magnetron sputtering technique at detector back side deposit aluminium film, forms aluminium reflector layer.
Advantageous Effects of the present invention is: utilize platinum silicon nanowires to increase absorptivity, and meanwhile, platinum silicon nanowires top exists great fringing field, produces avalanche multiplication effect, increases substantially the quantum efficiency of platinum infrared silicon detector; Increase P type polysilicon cap, the escape probability of photoproduction hot hole can be made to double, and prevent the movable charge in antireflection film layer and photoproduction free electron to exchange, reduce noise and the dark current of platinum infrared silicon detector; Detector adopts just according to mode, significantly simplifies packaging technology, improves the reliability of device.
Accompanying drawing explanation
Fig. 1, structural representation of the present invention;
In figure, each title corresponding to mark is respectively: aluminium reflector layer 1, P type epitaxial silicon substrate layer 2, platinum silicon thin film photo-sensitive layer 3, P type polysilicon cap 4, antireflection film layer 5, output diode 6, P+ ditch resistance 7, contact conductor 8, P+ diffusely 9, N guard ring 10, grid oxygen medium layer 11, silicon nitride medium layer 12.
Embodiment
A kind of platinum silicon nanowires Infrared Detectors, its structure is: described platinum silicon nanowires Infrared Detectors comprises P type epitaxial silicon substrate layer 2, platinum silicon thin film photo-sensitive layer 3, P type polysilicon cap 4, antireflection film layer 5, P type epitaxial silicon substrate layer 2, platinum silicon thin film photo-sensitive layer 3, P type polysilicon cap 4, antireflection film layer 5 stack gradually together; Described platinum silicon thin film photo-sensitive layer 3 is platinum silicon nanowires; The mode of operation of described platinum silicon nanowires Infrared Detectors adopts just according to mode.
Further, described platinum silicon nanowires Infrared Detectors is also provided with output diode 6, P+ ditch resistance 7, contact conductor 8, P+ diffusely 9 and N guard ring 10.
Further, described P type epitaxial silicon substrate layer 2 back side is also laminated with aluminium reflector layer 1.
Further, described antireflection film layer 5 adopts hafnia film.
A kind of platinum silicon nanowires Infrared Detectors manufacture method, the steps include:
1) P type epitaxial silicon substrate layer 2 is provided;
2) at the upper surface growth grid oxygen medium layer 11 of P type epitaxial silicon substrate layer 2, at grid oxygen medium layer 11 surface deposition silicon nitride medium layer 12;
3) adopt boron diffusion technology on P type epitaxial silicon substrate layer 2, form P+ ditch resistance 7 and P+ diffusely 9;
4) phosphonium ion injection technology is adopted to form output diode 6 and N guard ring 10 respectively on P type epitaxial silicon substrate layer 2;
5) plasma etching industrial is adopted to be etched away by the silicon nitride medium layer 12 within the scope of photosensitive area; Wet corrosion technique is adopted to be eroded by the grid oxygen medium layer 11 within the scope of photosensitive area; Exposed P type epitaxial silicon substrate layer 2 region is out photosensitive area window;
6) adopt ultra high vacuum sputtering technology at photosensitive area range of deposited platinum film and in-situ annealing; Adopt platinum assisted etch process wet etching photosensitive area window, form silicon nanowires, with chloroazotic acid etching away platinum film;
7) erode the natural oxidizing layer on silicon nanowires, adopt ultra high vacuum sputtering technology at photosensitive area deposit platinum film and in-situ annealing, silicon nanowires generates platinum silicon thin film, form platinum silicon nanowires, platinum silicon nanowires is platinum silicon thin film photo-sensitive layer 3; With the unreacted platinum film of chloroazotic acid etching away;
8) utilize pecvd process in the peripheral deposit low temperature silicon dioxide film in photosensitive area and photosensitive area;
9) photoetching process is adopted the low temperature silicon dioxide film within the scope of photosensitive area to be eroded;
10) adopt ultra high vacuum sputtering technology at photosensitive area and photosensitive area peripheral deposit P type polysilicon membrane, in-situ annealing, forms P type polysilicon cap 4.
11) method adopting corrosion to peel off, removes low-temperature silicon dioxide and the P type polysilicon membrane of periphery, photosensitive area;
12) magnetron sputtering technique deposit hafnium oxide antireflection film layer 5 in P conformal polysilicon cap 4 is adopted;
13) photoetching process is adopted to form fairlead;
14) utilize magnetron sputtering technique at detector front deposit aluminium film, photoetching forms contact conductor 8;
15) polished backside, utilizes magnetron sputtering technique at detector back side deposit aluminium film, forms aluminium reflector layer 1.
Claims (1)
1. a platinum silicon nanowires Infrared Detectors manufacture method, is characterized in that: following steps for manufacturing platinum silicon nanowires Infrared Detectors:
1) P type epitaxial silicon substrate layer (2) is provided;
2) at upper surface growth grid oxygen medium layer (11) of P type epitaxial silicon substrate layer (2), at grid oxygen medium layer (11) surface deposition silicon nitride medium layer (12);
3) boron diffusion technology is adopted to form P+ ditch resistance (7) and P+ diffusely (9) P type epitaxial silicon substrate layer (2) is upper;
4) adopt phosphonium ion injection technology on P type epitaxial silicon substrate layer (2), form output diode (6) and N guard ring (10) respectively;
5) plasma etching industrial is adopted to be etched away by the silicon nitride medium layer (12) within the scope of photosensitive area; Wet corrosion technique is adopted to be eroded by the grid oxygen medium layer (11) within the scope of photosensitive area; Exposed P type epitaxial silicon substrate layer (2) region is out photosensitive area window;
6) adopt ultra high vacuum sputtering technology at photosensitive area range of deposited platinum film and in-situ annealing; Adopt platinum assisted etch process wet etching photosensitive area window, form silicon nanowires, with chloroazotic acid etching away platinum film;
7) erode the natural oxidizing layer on silicon nanowires, adopt ultra high vacuum sputtering technology at photosensitive area deposit platinum film and in-situ annealing, silicon nanowires generates platinum silicon thin film, form platinum silicon nanowires, platinum silicon nanowires is platinum silicon thin film photo-sensitive layer (3); With the unreacted platinum film of chloroazotic acid etching away;
8) utilize pecvd process in the peripheral deposit low temperature silicon dioxide film in photosensitive area and photosensitive area;
9) photoetching process is adopted the low temperature silicon dioxide film within the scope of photosensitive area to be eroded;
10) adopt ultra high vacuum sputtering technology at photosensitive area and photosensitive area peripheral deposit P type polysilicon membrane, in-situ annealing, forms P type polysilicon cap (4);
11) method adopting corrosion to peel off, removes low-temperature silicon dioxide and the P type polysilicon membrane of periphery, photosensitive area;
12) adopt magnetron sputtering technique at the upper deposit hafnium oxide antireflection film layer (5) of P conformal polysilicon cap (4);
13) photoetching process is adopted to form fairlead;
14) utilize magnetron sputtering technique at detector front deposit aluminium film, photoetching forms contact conductor (8);
15) polished backside, utilizes magnetron sputtering technique at detector back side deposit aluminium film, forms aluminium reflector layer (1).
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104143581A (en) * | 2014-08-12 | 2014-11-12 | 中国电子科技集团公司第四十四研究所 | Palladium silicon nanowire room temperature infrared detector and manufacturing method thereof |
| CN105841823A (en) * | 2016-04-14 | 2016-08-10 | 董友强 | Manganese-silicon nanowire infrared detector and manufacturing method thereof |
| US10312391B2 (en) * | 2016-10-04 | 2019-06-04 | Omnivision Technologies, Inc. | Apparatus and method for single-photon avalanche-photodiode detectors with reduced dark count rate |
| CN107394000B (en) * | 2017-08-08 | 2019-01-29 | 中国电子科技集团公司第四十四研究所 | Silicon substrate platinum nano-tube detector and preparation method thereof |
| CN108847427A (en) * | 2018-05-08 | 2018-11-20 | 广东工业大学 | A kind of two-dimensional material photodetector of embedded reflecting mirror and its preparation method and application |
| CN112582495B (en) * | 2020-12-03 | 2024-04-09 | 无锡中微晶园电子有限公司 | Infrared reinforced silicon-based photoelectric detector |
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| US4536658A (en) * | 1983-01-05 | 1985-08-20 | The United States Of America As Represented By The Secretary Of The Air Force | Hybrid Schottky infrared focal plane array |
| US4544939A (en) * | 1981-08-25 | 1985-10-01 | Rca Corporation | Schottky-barrier diode radiant energy detector with extended longer wavelength response |
| US4875082A (en) * | 1986-06-20 | 1989-10-17 | Ford Aerospace Corporation | Schottky barrier photodiode structure |
| CN102030309A (en) * | 2010-11-10 | 2011-04-27 | 中国科学院理化技术研究所 | Mn27Si47-Si heterostructure nanowire arrays or Mn27Si47Method for preparing nanowire array |
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2014
- 2014-03-07 CN CN201410081602.4A patent/CN103794673B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4544939A (en) * | 1981-08-25 | 1985-10-01 | Rca Corporation | Schottky-barrier diode radiant energy detector with extended longer wavelength response |
| US4536658A (en) * | 1983-01-05 | 1985-08-20 | The United States Of America As Represented By The Secretary Of The Air Force | Hybrid Schottky infrared focal plane array |
| US4875082A (en) * | 1986-06-20 | 1989-10-17 | Ford Aerospace Corporation | Schottky barrier photodiode structure |
| CN102030309A (en) * | 2010-11-10 | 2011-04-27 | 中国科学院理化技术研究所 | Mn27Si47-Si heterostructure nanowire arrays or Mn27Si47Method for preparing nanowire array |
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Address after: No.23 Xiyong Avenue, Shapingba District, Chongqing 401332 Patentee after: CETC Chip Technology (Group) Co.,Ltd. Address before: No. 367 Xiyong Road, Weidian Garden, Xiyong Town, Shapingba District, Chongqing, 401331 Patentee before: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION CHONGQING ACOUSTIC-OPTIC-ELECTRONIC CO.,LTD. |