CN103794673A - Platinum-silicon nanowire infrared detector and manufacturing method thereof - Google Patents
Platinum-silicon nanowire infrared detector and manufacturing method thereof Download PDFInfo
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- CN103794673A CN103794673A CN201410081602.4A CN201410081602A CN103794673A CN 103794673 A CN103794673 A CN 103794673A CN 201410081602 A CN201410081602 A CN 201410081602A CN 103794673 A CN103794673 A CN 103794673A
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- XRZCZVQJHOCRCR-UHFFFAOYSA-N [Si].[Pt] Chemical compound [Si].[Pt] XRZCZVQJHOCRCR-UHFFFAOYSA-N 0.000 title claims abstract description 72
- 239000002070 nanowire Substances 0.000 title claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 46
- 239000010703 silicon Substances 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 28
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 40
- 239000010408 film Substances 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 31
- 239000010409 thin film Substances 0.000 claims description 28
- 229920005591 polysilicon Polymers 0.000 claims description 25
- 229910052697 platinum Inorganic materials 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 238000005516 engineering process Methods 0.000 claims description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- 239000004411 aluminium Substances 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 9
- 238000011065 in-situ storage Methods 0.000 claims description 9
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 9
- 238000001259 photo etching Methods 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 239000012528 membrane Substances 0.000 claims description 6
- NICDRCVJGXLKSF-UHFFFAOYSA-N nitric acid;trihydrochloride Chemical compound Cl.Cl.Cl.O[N+]([O-])=O NICDRCVJGXLKSF-UHFFFAOYSA-N 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 241000588731 Hafnia Species 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- -1 phosphonium ion Chemical class 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 4
- 239000003574 free electron Substances 0.000 abstract description 3
- 238000012536 packaging technology Methods 0.000 abstract description 3
- 238000005286 illumination Methods 0.000 abstract 2
- 230000005855 radiation Effects 0.000 description 4
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 229910021340 platinum monosilicide Inorganic materials 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- SGUSHACRGOXFII-UHFFFAOYSA-N [Na].[Si].[Pt] Chemical compound [Na].[Si].[Pt] SGUSHACRGOXFII-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
A platinum-silicon nanowire infrared detector comprises a P-type epitaxial silicon substrate layer, a platinum-silicon film photo-sensitive layer, a P-type polycrystalline silicon cap layer and an antireflection film layer. The P-type epitaxial silicon substrate layer, the platinum-silicon film photo-sensitive layer, the P-type polycrystalline silicon cap layer and the antireflection film layer are sequentially overlapped. The platinum-silicon film photo-sensitive layer is a platinum-silicon nanowire, and the platinum-silicon nanowire infrared detector works in a front illumination mode. The platinum-silicon nanowire infrared detector has the advantages that absorptive rate can be increased through the platinum-silicon nanowire, a huge fringing field exists at the top end of the platinum-silicon nanowire to generate an avalanche multiplication effect, and the quantum efficiency of the platinum-silicon nanowire infrared detector is substantially improved; through the P-type polycrystalline silicon cap layer, the escape probability of photoproduction hot holes can be doubled, exchange of movable electric charges and photoproduction free electrons in the antireflection film layer is prevented, noise and dark currents of the platinum-silicon nanowire infrared detector are reduced, the front illumination mode is adopted in the detector, the packaging technology is substantially simplified, and reliability of the detector is improved.
Description
Technical field
The present invention relates to a kind of Infrared Detectors, relate in particular to a kind of platinum silicon nanowires Infrared Detectors and preparation method thereof.
Background technology
The PtSi infrared focal plane array device that adopts PtSi/P-Si Schottky barrier detector to make has the features such as pixel integrated level is high, photoresponse good uniformity, chip good stability, range of application is very extensive, but with InSb, the comparison of HgTeCd Infrared Detectors, platinum infrared silicon detector quantum efficiency is low 1 more than the order of magnitude; For many years, technical staff is devoted to improve the research of platinum infrared silicon detector quantum efficiency always.
Summary of the invention
For the problem in background technology, the present invention proposes a kind of platinum silicon nanowires Infrared Detectors, its structure is: described platinum silicon nanowires Infrared Detectors comprises P type epitaxial silicon substrate layer, platinum silicon thin film photosensitive layer, P type polysilicon block layer, antireflection film layer, and P type epitaxial silicon substrate layer, platinum silicon thin film photosensitive layer, P type polysilicon block layer, antireflection film layer stack gradually together; Described platinum silicon thin film photosensitive layer is platinum silicon nanowires; The mode of operation of described platinum silicon nanowires Infrared Detectors adopts just according to mode.
The operation principle of aforementioned platinum silicon nanowires Infrared Detectors is: infrared radiation is from positive incident, after antireflection film layer transmission, the infrared light that photon energy is less than Si energy gap arrives platinum silicon thin film photosensitive layer through P type polysilicon block layer, and inspire electron-hole pair in platinum silicon thin film photosensitive layer, energy exceedes the hot hole of barrier height and crosses PtSi/P-Si potential barrier, enter P type epitaxial silicon substrate layer and P type polysilicon block layer, this just makes to have in platinum silicon thin film photosensitive layer the accumulation of electronics, and cuniculate accumulation in P type epitaxial silicon substrate layer and P type polysilicon block layer, P type epitaxial silicon substrate layer and all ground connection of P type polysilicon block layer, in platinum silicon thin film photosensitive layer, the electronics of accumulation is collected by diode, complete the detection to infrared radiation, due to multiple reflections between the platinum silicon nanowires of Infrared in platinum silicon thin film photosensitive layer, increase the absorptivity of platinum silicon thin film to infrared radiation, the platinum silicon thin film photosensitive layer of nanostructure and P type epitaxial silicon substrate layer form Schottky Barrier Contact, there is larger fringing field effect, produce larger fringe field, light induced electron generation avalanche multiplication effect, the quantum efficiency of increase detector, on platinum silicon sodium rice, increase one deck P type polysilicon block layer, can make the escape probability of photoproduction hot hole double, and stoped movable charge and the exchange of photoproduction free electron in antireflective coating, reduce noise and the dark current of platinum infrared silicon detector, meanwhile, detector of the present invention adopts just according to mode, can realize ultraviolet, visible ray, medium-wave infrared multispectral sensing, compared with carrying on the back the mode of photograph, except existing aforementioned advantages, has also significantly simplified packaging technology, has improved the reliability of device.
Based on the conventional structure on existing Infrared Detectors, on platinum silicon nanowires Infrared Detectors of the present invention, be also provided with output diode, the resistance of P+ ditch, contact conductor, P+ diffusely with N guard ring.
In order further to improve the absorptivity of platinum silicon thin film photosensitive layer to infrared radiation, described P type epitaxial silicon substrate layer surface is also laminated with aluminium reflector layer; The infrared ray not absorbed by platinum silicon thin film photosensitive layer transmiting through P type epitaxial silicon substrate layer, after the reflection of aluminium reflector layer, can again arrive platinum silicon nanowires photosensitive layer and be absorbed.
Preferably, described antireflection film layer adopts hafnia film.
Based on aforementioned device, the invention allows for a kind of platinum silicon nanowires Infrared Detectors manufacture method, its processing step is:
1) provide P type epitaxial silicon substrate layer;
2) at the upper surface growth grid oxygen medium layer of P type epitaxial silicon substrate layer, at grid oxygen medium layer surface deposition silicon nitride medium layer;
3) adopt boron diffusion technology on P type epitaxial silicon substrate layer, to form the resistance of P+ ditch and P+ diffusely;
4) adopt phosphonium ion injection technology to form respectively output diode and N guard ring on P type epitaxial silicon substrate layer;
5) adopt plasma etching industrial that the silicon nitride medium layer within the scope of photosensitive area is etched away; Adopt wet corrosion technique that the grid oxygen medium layer within the scope of photosensitive area is eroded; Exposed P type epitaxial silicon substrate layer region is out photosensitive area window;
6) adopt ultra high vacuum sputtering technology in photosensitive area range of deposited platinum film in-situ annealing; Adopt platinum assisted etch process wet etching photosensitive area window, form silicon nanowires, corrode and remove platinum film with chloroazotic acid;
7) erode the natural oxidizing layer on silicon nanowires, adopt ultra high vacuum sputtering technology in photosensitive area deposit platinum film in-situ annealing, generate platinum silicon thin film on silicon nanowires, form platinum silicon nanowires, platinum silicon nanowires is platinum silicon thin film photosensitive layer; Corrode and remove unreacted platinum film with chloroazotic acid;
8) utilize pecvd process in photosensitive area and photosensitive area peripheral deposit low-temperature silicon dioxide film;
9) adopt photoetching process that the low-temperature silicon dioxide thin film corrosive within the scope of photosensitive area is fallen;
10) adopt ultra high vacuum sputtering technology in photosensitive area and photosensitive area peripheral deposit P type polysilicon membrane, in-situ annealing, forms P type polysilicon block layer.
11) adopt and corrode the method for peeling off, remove low-temperature silicon dioxide and the P type polysilicon membrane of periphery, photosensitive area;
12) adopt magnetron sputtering technique deposit hafnium oxide antireflection film layer on P conformal polysilicon block layer;
13) adopt photoetching process to form fairlead;
14) utilize magnetron sputtering technique at the positive deposit aluminium of detector film, photoetching forms contact conductor;
15) polished backside, utilizes magnetron sputtering technique at detector back side deposit aluminium film, forms aluminium reflector layer.
Useful technique effect of the present invention is: utilize platinum silicon nanowires can increase absorptivity, meanwhile, platinum silicon nanowires top exists great fringing field, produces avalanche multiplication effect, increases substantially the quantum efficiency of platinum infrared silicon detector; Increase P type polysilicon block layer, can make the escape probability of photoproduction hot hole double, and stoped movable charge and the exchange of photoproduction free electron in antireflection film layer, reduce noise and the dark current of platinum infrared silicon detector; Detector adopts just according to mode, has significantly simplified packaging technology, has improved the reliability of device.
Accompanying drawing explanation
Fig. 1, structural representation of the present invention;
In figure, the corresponding title of each mark is respectively: aluminium reflector layer 1, P type epitaxial silicon substrate layer 2, platinum silicon thin film photosensitive layer 3, P type polysilicon block layer 4, antireflection film layer 5, output diode 6, P+ ditch resistance 7, contact conductor 8, P+ diffusely 9, N guard ring 10, grid oxygen medium layer 11, silicon nitride medium layer 12.
Embodiment
A kind of platinum silicon nanowires Infrared Detectors, its structure is: described platinum silicon nanowires Infrared Detectors comprises P type epitaxial silicon substrate layer 2, platinum silicon thin film photosensitive layer 3, P type polysilicon block layer 4, antireflection film layer 5, and P type epitaxial silicon substrate layer 2, platinum silicon thin film photosensitive layer 3, P type polysilicon block layer 4, antireflection film layer 5 stack gradually together; Described platinum silicon thin film photosensitive layer 3 is platinum silicon nanowires; The mode of operation of described platinum silicon nanowires Infrared Detectors adopts just according to mode.
Further, on described platinum silicon nanowires Infrared Detectors, be also provided with output diode 6, P+ ditch resistance 7, contact conductor 8, P+ diffusely 9 and N guard ring 10.
Further, described P type epitaxial silicon substrate layer 2 back sides are also laminated with aluminium reflector layer 1.
Further, described antireflection film layer 5 adopts hafnia film.
A kind of platinum silicon nanowires Infrared Detectors manufacture method, the steps include:
1) provide P type epitaxial silicon substrate layer 2;
2) at the upper surface growth grid oxygen medium layer 11 of P type epitaxial silicon substrate layer 2, at grid oxygen medium layer 11 surface deposition silicon nitride medium layer 12;
3) adopt boron diffusion technology on P type epitaxial silicon substrate layer 2, to form the resistance 7 of P+ ditch and P+ diffusely 9;
4) adopt phosphonium ion injection technology to form respectively output diode 6 and N guard ring 10 on P type epitaxial silicon substrate layer 2;
5) adopt plasma etching industrial that the silicon nitride medium layer 12 within the scope of photosensitive area is etched away; Adopt wet corrosion technique that the grid oxygen medium layer 11 within the scope of photosensitive area is eroded; Exposed P type epitaxial silicon substrate layer 2 regions are out photosensitive area window;
6) adopt ultra high vacuum sputtering technology in photosensitive area range of deposited platinum film in-situ annealing; Adopt platinum assisted etch process wet etching photosensitive area window, form silicon nanowires, corrode and remove platinum film with chloroazotic acid;
7) erode the natural oxidizing layer on silicon nanowires, adopt ultra high vacuum sputtering technology in photosensitive area deposit platinum film in-situ annealing, generate platinum silicon thin film on silicon nanowires, form platinum silicon nanowires, platinum silicon nanowires is platinum silicon thin film photosensitive layer 3; Corrode and remove unreacted platinum film with chloroazotic acid;
8) utilize pecvd process in photosensitive area and photosensitive area peripheral deposit low-temperature silicon dioxide film;
9) adopt photoetching process that the low-temperature silicon dioxide thin film corrosive within the scope of photosensitive area is fallen;
10) adopt ultra high vacuum sputtering technology in photosensitive area and photosensitive area peripheral deposit P type polysilicon membrane, in-situ annealing, forms P type polysilicon block layer 4.
11) adopt and corrode the method for peeling off, remove low-temperature silicon dioxide and the P type polysilicon membrane of periphery, photosensitive area;
12) adopt magnetron sputtering technique deposit hafnium oxide antireflection film layer 5 on P conformal polysilicon block layer 4;
13) adopt photoetching process to form fairlead;
14) utilize magnetron sputtering technique at the positive deposit aluminium of detector film, photoetching forms contact conductor 8;
15) polished backside, utilizes magnetron sputtering technique at detector back side deposit aluminium film, forms aluminium reflector layer 1.
Claims (5)
1. a platinum silicon nanowires Infrared Detectors, it is characterized in that: described platinum silicon nanowires Infrared Detectors comprises P type epitaxial silicon substrate layer (2), platinum silicon thin film photosensitive layer (3), P type polysilicon block layer (4), antireflection film layer (5), and P type epitaxial silicon substrate layer (2), platinum silicon thin film photosensitive layer (3), P type polysilicon block layer (4), antireflection film layer (5) stack gradually together; Described platinum silicon thin film photosensitive layer (3) is platinum silicon nanowires; The mode of operation of described platinum silicon nanowires Infrared Detectors adopts just according to mode.
2. platinum silicon nanowires Infrared Detectors according to claim 1, is characterized in that: on described platinum silicon nanowires Infrared Detectors, be also provided with output diode (6), the resistance of P+ ditch (7), contact conductor (8), P+ (9) and N guard ring (10) diffusely.
3. platinum silicon nanowires Infrared Detectors according to claim 1, is characterized in that: described P type epitaxial silicon substrate layer (2) back side is also laminated with aluminium reflector layer (1).
4. platinum silicon nanowires Infrared Detectors according to claim 1, is characterized in that: described antireflection film layer (5) adopts hafnia film.
5. a platinum silicon nanowires Infrared Detectors manufacture method, is characterized in that: following steps for manufacturing platinum silicon nanowires Infrared Detectors:
1) provide P type epitaxial silicon substrate layer (2);
2) at the upper surface growth grid oxygen medium layers (11) of P type epitaxial silicon substrate layer (2), at grid oxygen medium layer (11) surface deposition silicon nitride medium layer (12);
3) adopt boron diffusion technology in the upper P+ of formation of P type epitaxial silicon substrate layer (2) ditch resistance (7) and P+ (9) diffusely;
4) adopt phosphonium ion injection technology on P type epitaxial silicon substrate layer (2), to form respectively output diode (6) and N guard ring (10);
5) adopt plasma etching industrial that the silicon nitride medium layer (12) within the scope of photosensitive area is etched away; Adopt wet corrosion technique that the grid oxygen medium layer (11) within the scope of photosensitive area is eroded; Exposed P type epitaxial silicon substrate layer (2) region is out photosensitive area window;
6) adopt ultra high vacuum sputtering technology in photosensitive area range of deposited platinum film in-situ annealing; Adopt platinum assisted etch process wet etching photosensitive area window, form silicon nanowires, corrode and remove platinum film with chloroazotic acid;
7) erode the natural oxidizing layer on silicon nanowires, adopt ultra high vacuum sputtering technology in photosensitive area deposit platinum film in-situ annealing, generate platinum silicon thin film on silicon nanowires, form platinum silicon nanowires, platinum silicon nanowires is platinum silicon thin film photosensitive layer (3); Corrode and remove unreacted platinum film with chloroazotic acid;
8) utilize pecvd process in photosensitive area and photosensitive area peripheral deposit low-temperature silicon dioxide film;
9) adopt photoetching process that the low-temperature silicon dioxide thin film corrosive within the scope of photosensitive area is fallen;
10) adopt ultra high vacuum sputtering technology in photosensitive area and photosensitive area peripheral deposit P type polysilicon membrane, in-situ annealing, forms P type polysilicon block layer (4);
11) adopt and corrode the method for peeling off, remove low-temperature silicon dioxide and the P type polysilicon membrane of periphery, photosensitive area;
12) adopt magnetron sputtering technique at the upper deposit hafnium oxide antireflection film layer (5) of P conformal polysilicon block layer (4);
13) adopt photoetching process to form fairlead;
14) utilize magnetron sputtering technique at the positive deposit aluminium of detector film, photoetching forms contact conductor (8);
15) polished backside, utilizes magnetron sputtering technique at detector back side deposit aluminium film, forms aluminium reflector layer (1).
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Cited By (6)
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| CN104143581A (en) * | 2014-08-12 | 2014-11-12 | 中国电子科技集团公司第四十四研究所 | Palladium silicon nanowire room temperature infrared detector and manufacturing method thereof |
| CN105841823A (en) * | 2016-04-14 | 2016-08-10 | 董友强 | Manganese-silicon nanowire infrared detector and manufacturing method thereof |
| CN107394000A (en) * | 2017-08-08 | 2017-11-24 | 中国电子科技集团公司第四十四研究所 | Silicon substrate platinum nano-tube detector and preparation method thereof |
| CN107895743A (en) * | 2016-10-04 | 2018-04-10 | 豪威科技股份有限公司 | The apparatus and method of single-photon avalanche photodiode detector |
| CN108847427A (en) * | 2018-05-08 | 2018-11-20 | 广东工业大学 | A kind of two-dimensional material photodetector of embedded reflecting mirror and its preparation method and application |
| CN112582495A (en) * | 2020-12-03 | 2021-03-30 | 无锡中微晶园电子有限公司 | Infrared enhanced silicon-based photoelectric detector |
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| CN105841823A (en) * | 2016-04-14 | 2016-08-10 | 董友强 | Manganese-silicon nanowire infrared detector and manufacturing method thereof |
| CN107895743A (en) * | 2016-10-04 | 2018-04-10 | 豪威科技股份有限公司 | The apparatus and method of single-photon avalanche photodiode detector |
| CN107895743B (en) * | 2016-10-04 | 2020-07-10 | 豪威科技股份有限公司 | Apparatus and method for single photon avalanche photodiode detector |
| CN107394000A (en) * | 2017-08-08 | 2017-11-24 | 中国电子科技集团公司第四十四研究所 | Silicon substrate platinum nano-tube detector and preparation method thereof |
| CN108847427A (en) * | 2018-05-08 | 2018-11-20 | 广东工业大学 | A kind of two-dimensional material photodetector of embedded reflecting mirror and its preparation method and application |
| CN112582495A (en) * | 2020-12-03 | 2021-03-30 | 无锡中微晶园电子有限公司 | Infrared enhanced silicon-based photoelectric detector |
| CN112582495B (en) * | 2020-12-03 | 2024-04-09 | 无锡中微晶园电子有限公司 | Infrared reinforced silicon-based photoelectric detector |
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