CN108847427A - A kind of two-dimensional material photodetector of embedded reflecting mirror and its preparation method and application - Google Patents
A kind of two-dimensional material photodetector of embedded reflecting mirror and its preparation method and application Download PDFInfo
- Publication number
- CN108847427A CN108847427A CN201810432151.2A CN201810432151A CN108847427A CN 108847427 A CN108847427 A CN 108847427A CN 201810432151 A CN201810432151 A CN 201810432151A CN 108847427 A CN108847427 A CN 108847427A
- Authority
- CN
- China
- Prior art keywords
- dimensional material
- reflecting mirror
- photodetector
- dielectric layer
- embedded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 78
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical group [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- GKCNVZWZCYIBPR-UHFFFAOYSA-N sulfanylideneindium Chemical compound [In]=S GKCNVZWZCYIBPR-UHFFFAOYSA-N 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 2
- 230000008033 biological extinction Effects 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention belongs to micro-nano photoelectron technical fields, disclose a kind of two-dimensional material photodetector and preparation method thereof of embedded reflecting mirror.The two-dimensional material photodetector successively includes substrate, metallic mirror, dielectric layer, two-dimensional material and source-drain electrode from bottom to top.The embedded metal reflecting mirror between substrate and dielectric layer, specific preparation step are：The metal of one layer of high reflectance is first plated on substrate；Dielectric layer is plated on metallic mirror；Two-dimensional material is grown or is transferred to above dielectric layer；Source-drain electrode is plated in two-dimensional material.Preparation method of the two-dimensional material photodetector of the embedded reflecting mirror have many advantages, such as easy to operate, processing step is few, it is high-efficient, effectively improve device detection performance.
Description
Technical field
The invention belongs to micro-nano photoelectron technical fields, more particularly, to a kind of two-dimensional material light of embedded reflecting mirror
Electric explorer and its preparation method and application.
Background technique
New Two Dimensional material really enters into people's sight only short several years, has rapidly become the big of global Material Field
Heat continues to bring out new discovery and new breakthrough.Two-dimensional material usually has certain band gap and unique mechanical, optically and electrically
Etc. physical properties, be increasingly becoming emerging two-dimensional material system, the research of two-dimensional material photodetector is also increasingly prosperous.So
And the area of two-dimensional material is usually smaller, thickness is also very thin, and be translucent shape, and therefore, extinction efficiency is relatively low, sternly
The performance of recasting about photodetector.
Summary of the invention
In order to solve above-mentioned the shortcomings of the prior art and disadvantage, a kind of two-dimensional material photoelectricity of embedded reflecting mirror is provided
Detector.The photodetector effectively improves the extinction efficiency of two-dimensional material photodetector, improves photodetection
Energy.
Another object of the present invention is to provide the preparation methods of the two-dimensional material photodetector of above-mentioned embedded reflecting mirror.
A further object of the present invention is to provide the applications of the two-dimensional material photodetector of above-mentioned embedded reflecting mirror.
The purpose of the present invention is realized by following technical proposals：
A kind of two-dimensional material photodetector of embedded reflecting mirror, the two-dimensional material photodetector is from bottom to top successively
Including substrate, metallic mirror, dielectric layer, two-dimensional material and source-drain electrode.
Preferably, the substrate be silicon or germanium, the metallic mirror be silver or aluminium, the dielectric layer be zirconium dioxide or
Hafnium oxide, the two-dimensional material are black phosphorus, blue phosphorus or indium sulfide, and the source-drain electrode is copper, titanium or gold.
The preparation method of the two-dimensional material photodetector of the embedded reflecting mirror, comprises the following specific steps that：
S1. the metal for first plating one layer of high reflectance on substrate, forms metallic mirror；
S2. dielectric layer is plated on metallic mirror；
S3. chemical vapor deposition method or micromechanics stripping method are used, two-dimensional material is transferred to above dielectric layer；
S4. source-drain electrode is plated in two-dimensional material, that is, forms the two-dimensional material photodetector of embedded reflecting mirror.
Application of the two-dimensional material photodetector of the embedded reflecting mirror in micro-nano photoelectron technical field.
Compared with prior art, the invention has the advantages that：
1. the two-dimensional material photodetector of the embedded reflecting mirror of the present invention effectively improves two-dimensional material photodetector
Extinction efficiency, improve photodetection performance.
2. preparation method of the invention have it is easy to operate, processing step is few, it is high-efficient, effectively improve device detection performance
The advantages that.
Detailed description of the invention
Fig. 1 is the cross section structure schematic diagram that the two-dimensional material photodetector of reflecting mirror is embedded in the embodiment of the present invention 1.
Fig. 2 is that the process for the preparation method of two-dimensional material photodetector that reflecting mirror is embedded in the embodiment of the present invention 1 is shown
It is intended to.
Specific embodiment
The contents of the present invention are further illustrated combined with specific embodiments below, but should not be construed as limiting the invention.
Unless otherwise specified, the conventional means that technological means used in embodiment is well known to those skilled in the art.Except non-specifically
Illustrate, reagent that the present invention uses, method and apparatus is the art conventional reagents, method and apparatus.
Embodiment 1
A kind of two-dimensional material photodetector of embedded reflecting mirror, as shown in Figure 1, from bottom to top successively including substrate 1, gold
Belong to reflecting mirror 2, dielectric layer 3, two-dimensional material 4, source-drain electrode 5.
As shown in Fig. 2, the preparation method of the two-dimensional material photodetector of above-mentioned embedded reflecting mirror, including following step
Suddenly：
The first step first plates the metallic mirror 2 of one layer of high reflectance on substrate 1；Wherein, 1 material therefor of substrate is silicon,
2 material therefor of metallic mirror is silver.
Second step plates dielectric layer 3 on metallic mirror 2；Wherein, 3 material therefor of dielectric layer is zirconium dioxide.
Two-dimensional material 4 is grown in above dielectric layer 3 by third step using chemical vapour deposition technique；Wherein, two-dimensional material 4
Material therefor is black phosphorus.
4th step plates source-drain electrode 5 in two-dimensional material 4；Wherein, 5 material therefor of source-drain electrode is copper, is ultimately formed interior
The two-dimensional material photodetector of embedding reflecting mirror.
Embodiment 2
A kind of two-dimensional material photodetector of embedded reflecting mirror, as shown in Figure 1, from bottom to top successively including substrate 1, gold
Belong to reflecting mirror 2, dielectric layer 3, two-dimensional material 4, source-drain electrode 5.
As shown in Fig. 2, the preparation method of the two-dimensional material photodetector of above-mentioned embedded reflecting mirror, including following step
Suddenly：
The first step first plates the metallic mirror 2 of one layer of high reflectance on substrate 1；Wherein, 1 material therefor of substrate is germanium,
2 material therefor of metallic mirror is aluminium.
Second step plates dielectric layer 3 on metallic mirror 2；Wherein, 3 material therefor of dielectric layer is hafnium oxide.
Two-dimensional material 4 is grown in above dielectric layer 3 by third step using chemical vapour deposition technique；Wherein, two-dimensional material 4
Material therefor is blue phosphorus.
4th step plates source-drain electrode 5 in two-dimensional material 4；Wherein, 5 material therefor of source-drain electrode is titanium, is ultimately formed interior
The two-dimensional material photodetector of embedding reflecting mirror.
Embodiment 3
A kind of two-dimensional material photodetector of embedded reflecting mirror, as shown in Figure 1, from bottom to top successively including substrate 1, gold
Belong to reflecting mirror 2, dielectric layer 3, two-dimensional material 4, source-drain electrode 5.
As shown in Fig. 2, the preparation method of the two-dimensional material photodetector of above-mentioned embedded reflecting mirror, including following step
Suddenly：
The first step first plates the metallic mirror 2 of one layer of high reflectance on substrate 1；Wherein, 1 material therefor of substrate is germanium,
2 material therefor of metallic mirror is aluminium.
Second step plates dielectric layer 3 on metallic mirror 2；Wherein, 3 material therefor of dielectric layer is hafnium oxide.
Two-dimensional material 4 is grown in above dielectric layer 3 by third step using micromechanics stripping method；Wherein, 4 institute of two-dimensional material
It is indium sulfide with material.
4th step plates source-drain electrode 5 in two-dimensional material 4；Wherein, 5 material therefor of source-drain electrode is titanium, is ultimately formed interior
The two-dimensional material photodetector of embedding reflecting mirror.
The above embodiment is a preferred embodiment of the present invention, but embodiments of the present invention are not by above-described embodiment
Limitation, it is other it is any without departing from the spirit and principles of the present invention made by change, modification, substitution, combination and simplify,
It should be equivalent substitute mode, be included within the scope of the present invention.
Claims (4)
1. a kind of two-dimensional material photodetector of embedded reflecting mirror, which is characterized in that the two-dimensional material photodetector is certainly
It successively include substrate, metallic mirror, dielectric layer, two-dimensional material and source-drain electrode on down.
2. embedding the two-dimensional material photodetector of reflecting mirror according to claim 1, which is characterized in that the substrate is silicon
Or germanium, the metallic mirror are silver or aluminium, the dielectric layer is zirconium dioxide or hafnium oxide, and the two-dimensional material is black
Phosphorus, blue phosphorus or indium sulfide, the source-drain electrode are copper, titanium or gold.
3. the preparation method of the two-dimensional material photodetector of embedded reflecting mirror according to claim 1 or 2, feature exist
In comprising the following specific steps that：
S1. the metal for first plating one layer of high reflectance on substrate, forms metallic mirror；
S2. dielectric layer is plated on metallic mirror；
S3. chemical vapor deposition method or micromechanics stripping method are used, two-dimensional material is transferred to above dielectric layer；
S4. source-drain electrode is plated in two-dimensional material, that is, forms the two-dimensional material photodetector of embedded reflecting mirror.
4. the two-dimensional material photodetector of embedded reflecting mirror of any of claims 1 or 2 is in micro-nano photoelectron technical field
Application.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810432151.2A CN108847427A (en) | 2018-05-08 | 2018-05-08 | A kind of two-dimensional material photodetector of embedded reflecting mirror and its preparation method and application |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810432151.2A CN108847427A (en) | 2018-05-08 | 2018-05-08 | A kind of two-dimensional material photodetector of embedded reflecting mirror and its preparation method and application |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108847427A true CN108847427A (en) | 2018-11-20 |
Family
ID=64212684
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810432151.2A Pending CN108847427A (en) | 2018-05-08 | 2018-05-08 | A kind of two-dimensional material photodetector of embedded reflecting mirror and its preparation method and application |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108847427A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110289334A (en) * | 2019-07-02 | 2019-09-27 | 电子科技大学 | A kind of photodetector |
| CN112652669A (en) * | 2020-12-24 | 2021-04-13 | 上海师范大学 | Optical Tamm-state enhanced graphene photoelectric detector and preparation method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1705716A1 (en) * | 2005-03-24 | 2006-09-27 | ATMEL Germany GmbH | Semiconductor photodetector and method for making the same |
| CN103794673A (en) * | 2014-03-07 | 2014-05-14 | 中国电子科技集团公司第四十四研究所 | Platinum-silicon nanowire infrared detector and manufacturing method thereof |
| WO2014089454A2 (en) * | 2012-12-07 | 2014-06-12 | The Trustees Of Columbia University In The City Of New York | Systems and methods for graphene photodetectors |
| EP3147954A1 (en) * | 2015-09-22 | 2017-03-29 | Nokia Technologies Oy | Photodetector with conductive channel made from two dimensional material and its manufacturing method |
| CN107507911A (en) * | 2017-08-10 | 2017-12-22 | 中国科学院上海微系统与信息技术研究所 | Superconducting nano-wire single-photon detector |
| EP3301728A1 (en) * | 2016-09-19 | 2018-04-04 | Sharp Kabushiki Kaisha | Energy selective photodetector |
-
2018
- 2018-05-08 CN CN201810432151.2A patent/CN108847427A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1705716A1 (en) * | 2005-03-24 | 2006-09-27 | ATMEL Germany GmbH | Semiconductor photodetector and method for making the same |
| WO2014089454A2 (en) * | 2012-12-07 | 2014-06-12 | The Trustees Of Columbia University In The City Of New York | Systems and methods for graphene photodetectors |
| CN103794673A (en) * | 2014-03-07 | 2014-05-14 | 中国电子科技集团公司第四十四研究所 | Platinum-silicon nanowire infrared detector and manufacturing method thereof |
| EP3147954A1 (en) * | 2015-09-22 | 2017-03-29 | Nokia Technologies Oy | Photodetector with conductive channel made from two dimensional material and its manufacturing method |
| EP3301728A1 (en) * | 2016-09-19 | 2018-04-04 | Sharp Kabushiki Kaisha | Energy selective photodetector |
| CN107507911A (en) * | 2017-08-10 | 2017-12-22 | 中国科学院上海微系统与信息技术研究所 | Superconducting nano-wire single-photon detector |
Non-Patent Citations (1)
| Title |
|---|
| MICHELE BUSCEMA: ""Fast and Broadband Photoresponse of Few-Layer Black Phosphorus Field-Effect Transistors"", 《NANO LETT.》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110289334A (en) * | 2019-07-02 | 2019-09-27 | 电子科技大学 | A kind of photodetector |
| CN110289334B (en) * | 2019-07-02 | 2021-06-04 | 电子科技大学 | Photoelectric detector |
| CN112652669A (en) * | 2020-12-24 | 2021-04-13 | 上海师范大学 | Optical Tamm-state enhanced graphene photoelectric detector and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Racka-Szmidt et al. | A review: Inductively coupled plasma reactive ion etching of silicon carbide | |
| TWI603516B (en) | Organic light emitting diode with surface modification layer | |
| CN108847427A (en) | A kind of two-dimensional material photodetector of embedded reflecting mirror and its preparation method and application | |
| US8405169B2 (en) | Handling layer for transparent substrate | |
| CN104091874B (en) | Light emitting diode | |
| CN107014799A (en) | A kind of graphene/silver nano flower-like/PMMA " sandwich " structural flexibility SERS substrates and preparation method thereof | |
| KR20170140454A (en) | Display device and mufacturing method thereof | |
| FR3012134B1 (en) | PROCESS FOR OBTAINING A SUBSTRATE COATED BY A STACK INCLUDING A TRANSPARENT CONDUCTIVE OXIDE LAYER | |
| CN103293142A (en) | Flexible surface enhanced Raman spectrum base and preparation method thereof | |
| Aybeke et al. | Homogeneous large-scale crystalline nanoparticle-covered substrate with high SERS performance | |
| Wang et al. | Protective integrated transparent conductive film with high mechanical stability and uniform electric-field distribution | |
| US10765182B2 (en) | Decorative composite body having an electrically conductive layer and an electronic sensor | |
| TWI653349B (en) | Cu alloy target material, Cu alloy target, Cu alloy film and touch panel | |
| CN212182328U (en) | Optical biometric sensor and electronic device | |
| CN108305955A (en) | The production method of luminescent device and luminescent device | |
| CN100386055C (en) | Micro-injection and microring electrode combined probe and manufacturing method thereof | |
| JP2008162181A (en) | Laminated film, optical element having the same laminated film and manufacturing method of laminated film | |
| He et al. | Uniform light emission from electrically driven plasmonic grating using multilayer tunneling barriers | |
| CN106505130A (en) | A kind of graphical substrate of LED chip and preparation method thereof | |
| US20180215660A1 (en) | Method for the Fabrication of a Reduced Reflectance Metal Mesh | |
| CN109950370A (en) | Ultra-thin ultraviolet light emitting device and preparation method thereof | |
| CN104538483A (en) | Infrared light source and preparation method thereof | |
| CN110330237A (en) | One kind being based on chemcor glass substrate film deposition method | |
| CN109375295A (en) | A kind of optical window with edge microstructures | |
| CN204155254U (en) | A kind of capacitive touch screen of improvement |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20181120 |