CN110289334A - A kind of photodetector - Google Patents
A kind of photodetector Download PDFInfo
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- CN110289334A CN110289334A CN201910590027.3A CN201910590027A CN110289334A CN 110289334 A CN110289334 A CN 110289334A CN 201910590027 A CN201910590027 A CN 201910590027A CN 110289334 A CN110289334 A CN 110289334A
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- 239000006096 absorbing agent Substances 0.000 claims abstract description 36
- 239000000463 material Substances 0.000 claims abstract description 23
- 238000010521 absorption reaction Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 229910052976 metal sulfide Inorganic materials 0.000 claims abstract description 14
- 230000001052 transient effect Effects 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 32
- 239000010453 quartz Substances 0.000 claims description 26
- 239000003708 ampul Substances 0.000 claims description 25
- 239000007789 gas Substances 0.000 claims description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 18
- 229920000642 polymer Polymers 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 14
- 229910052717 sulfur Inorganic materials 0.000 claims description 11
- 239000011593 sulfur Substances 0.000 claims description 11
- 239000000843 powder Substances 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- 238000000108 ultra-filtration Methods 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 5
- 229920002873 Polyethylenimine Polymers 0.000 claims description 5
- 229960001484 edetic acid Drugs 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 235000018660 ammonium molybdate Nutrition 0.000 claims description 4
- 238000004090 dissolution Methods 0.000 claims description 4
- 239000002243 precursor Substances 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 4
- 238000003756 stirring Methods 0.000 claims description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 3
- 239000005864 Sulphur Substances 0.000 claims description 3
- 239000003643 water by type Substances 0.000 claims description 3
- 238000002309 gasification Methods 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- -1 transition Metal sulfide Chemical class 0.000 claims 1
- 229910052723 transition metal Inorganic materials 0.000 claims 1
- 239000012528 membrane Substances 0.000 abstract description 6
- 230000008878 coupling Effects 0.000 abstract description 3
- 238000010168 coupling process Methods 0.000 abstract description 3
- 238000005859 coupling reaction Methods 0.000 abstract description 3
- 230000000644 propagated effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000013589 supplement Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- APUPEJJSWDHEBO-UHFFFAOYSA-P ammonium molybdate Chemical compound [NH4+].[NH4+].[O-][Mo]([O-])(=O)=O APUPEJJSWDHEBO-UHFFFAOYSA-P 0.000 description 1
- 229940010552 ammonium molybdate Drugs 0.000 description 1
- 239000011609 ammonium molybdate Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
- H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Light Receiving Elements (AREA)
Abstract
The embodiment of the invention provides a kind of photodetector, including absorber, the absorber successively includes substrate layer, reflecting layer and absorbed layer from bottom to top, wherein the absorbed layer is transient metal sulfide film；Electrode layer is set on the absorbed layer；In this way, by setting gradually the reflecting layer, the absorbed layer and the electrode layer on the substrate layer, and utilizing the absorption layer material of the absorber is transient metal sulfide, absorber is set to work in visible waveband, and it is closer to by the real and imaginary parts of the complex refractivity index of transient metal sulfide, high loss film can be formed, so that incident light is propagated in film after being absorbed, and is worn off.So that the ultra-thin membrane structure of absorbed layer can reach nearly perfect absorption by the Critical Coupling with resonant cavity on the reflecting layer.
Description
Technical field
The present invention relates to photodetector technical field more particularly to a kind of photodetectors.
Background technique
Absorber is suffered to radio frequency in visible waveband and is widely applied.Traditional optical absorber is based on one kind
Fabry-Perot (Fabry-Perot, FP) chamber, the medium of this chamber are surrounded by the reflecting mirror of different reflectivity.This absorption
Although device is applied to optical detection and other need strong light-matter interaction luminescent device, but requires method cloth
In-thickness of Perot cavity has to be larger than λ/4n (λ is lambda1-wavelength, and n is the reflection coefficient of medium).Therefore, in view of current collection
Rapid at optics development, this thicker device has not adapted to the requirement to thickness of detector.
Since the absorber based on Meta Materials is since 2008 are reported, the ultra-thin absorbent based on Meta Materials, super surface
Device is extensively studied.But this absorber needs to come using originally sufficiently complex electron beam lithography in production
The other patterning of micro/nano level is carried out, therefore increases the difficulty manufactured.Meanwhile the Europe in this absorber metal structure
Nurse loss can generate parasitic absorption.
Summary of the invention
In order to solve the above technical problems, the embodiment of the present invention provides a kind of photodetector, by photodetector
The absorption layer material of absorber is set as transient metal sulfide, so that the membrane structure of the absorbed layer of absorber can lead to
It crosses and reaches nearly perfect absorption with the Critical Coupling of resonant cavity, avoid avoiding absorbing in the production process when layer film is made
The larger problem of technology difficulty.
In order to achieve the above object, the technical solution of the embodiment of the present invention is achieved in that
The embodiment of the present invention provides a kind of photodetector, including absorber, and the absorber successively includes from bottom to top
Substrate layer, reflecting layer and absorbed layer, wherein the absorbed layer is transient metal sulfide film；Electricity is set on the absorbed layer
Pole layer.
In embodiments of the present invention, the material of the substrate layer is silica.
In embodiments of the present invention, the material in the reflecting layer is gold or silver, with a thickness of 50~100nm.
In embodiments of the present invention, the growing method in the reflecting layer is ion sputtering or form removable method.
In embodiments of the present invention, the material of the absorbed layer is transient metal sulfide, with a thickness of 15~30nm.
In embodiments of the present invention, the r.m.s. roughness of the absorbed layer is less than 1nm.
In embodiments of the present invention, the growing method of the absorbed layer is polymer assisted deposition.
In embodiments of the present invention, the polymer assisted deposition includes:
By mass fraction by 1 part of ethylenediamine tetra-acetic acid and 1 part of polyethyleneimine mixed dissolution the shape in 30 parts of deionized waters
At solution；
Then 2 parts of ammonium molybdates or 2 parts of ammonium tungstates are added by mass fraction in the solution, thus the homogeneous polymerization formed
Object presoma；
Ultrafiltration is carried out after stirring to the homogeneous polymer presoma；
The homogeneous polymer precursor solution after the ultrafiltration is spin-coated on the reflecting layer and is obtained film,
In, spin speed 8000rpm, spin-coating time 30s；
After the film is reacted with sulfur family gas, it is heated to 500~900 DEG C in 1h, obtains sample；
It anneals to the sample, then cooled to room temperature.
In embodiments of the present invention, the method film reacted with sulfur family gas specifically:
The film is put into the inside of the quartz ampoule in tube furnace, sulfur family powder is placed in quartz ampoule inlet, and
It is passed through gas into the quartz ampoule, the sulfur family gas after gasification is delivered to adequately being reacted at film.
In embodiments of the present invention, the method for gas is passed through in Xiang Suoshu quartz ampoule are as follows:
Argon gas is passed through with 60sccm respectively into the quartz ampoule and hydrogen is passed through with 6~30sccm；
Wherein, when the sulfur family powder is sulphur powder, argon gas is only passed through with 60sccm into the quartz ampoule.
In embodiments of the present invention, the material of the electrode layer is gold.
In embodiments of the present invention, the electrode layer includes first electrode and second electrode, and the first electrode and institute
Second electrode permutation is stated to be arranged on the absorbed layer.
The embodiment of the invention provides a kind of photodetector, including absorber, the absorber successively wraps from bottom to top
Include substrate layer, reflecting layer and absorbed layer, wherein the absorbed layer is transient metal sulfide film；It is arranged on the absorbed layer
Electrode layer；In this way, by setting gradually the reflecting layer, the absorbed layer and the electrode layer, and benefit on the substrate layer
With being transient metal sulfide by the absorption layer material of the absorber, absorber is set to work in visible waveband, and pass through
The real and imaginary parts of the complex refractivity index of transient metal sulfide are closer to, and high loss film can be formed, so that incident light quilt
It propagates, and wears off in film after absorption.So that the ultra-thin membrane structure of absorbed layer can pass through on the reflecting layer
Reach nearly perfect absorption with the Critical Coupling of resonant cavity.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram for photodetector that the embodiment of the present invention one provides.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description.
Embodiment one
The embodiment of the invention provides a kind of photodetectors, as shown in Figure 1, including absorber and electrode layer, wherein institute
Stating absorber from bottom to top includes successively substrate layer 11, reflecting layer 12 and absorbed layer 13, and the electrode layer includes first electrode 21
With second electrode 22, the first electrode 21 and the second electrode 22 are arranged on the absorbed layer 13.
Here, the material of the substrate layer 11 is generally silica.
The reflecting layer 12 is grown on the substrate layer 11 by ion sputtering or form removable method, the reflecting layer 12
Material be gold or silver, specifically, when in use, the reflecting layer 12 with a thickness of 50~100nm.In this way, the thickness in reflecting layer
Spend it is sufficiently large, can make light all reflect, thus continue in absorbed layer propagate and gradually decay.
The absorbed layer 13 is grown in the reflecting layer 12 by polymer assisted deposition, wherein the material of absorbed layer 13
Material is transient metal sulfide, and with a thickness of 15~30nm, and the r.m.s. roughness of the absorbed layer 13 is less than 1nm.In this way, low
The transient metal sulfide absorbed layer of roughness can be further improved absorptivity, and absorber is made to reach nearly perfect absorption.
The material of the electrode layer is gold, here, the first electrode 21 and the second electrode in the electrode layer
22 can be it is identical, setting when, as described in Figure 1, the first electrode 21 and the second electrode 22 are separately positioned on institute
State the two sides of 13 upper surface of absorbed layer.
Further, in embodiments of the present invention, although transient metal sulfide (TMD) is used to solve as absorbed layer
Using the other patterned complicated technology of micro/nano level, and in this absorber produced, interference can ultrathin membrane (i.e.
The absorbed layer) in persistently exist, and can be 400nm to the absorptivity for reaching 87% between 640nm in wavelength, but actually make
In, due to ultrathin membrane (the i.e. described absorbed layer) processing when high roughness so that the absorptivity of this ultrathin membrane absorber
A degree of reduction can be generated, nearly perfect absorption is reached in a certain range in order to realize visible waveband, to have higher
Detectivity therefore make 13 film of transient metal sulfide absorbed layer prepared by the polymer assisted deposition
(the i.e. described absorbed layer 13) is smooth, uniform and smooth, has the r.m.s. roughness lower than 1nm, and realization effectively increases absorber
Absorptivity effect.
Specifically, the polymer assisted deposition includes:
By mass fraction by 1 part of ethylenediamine tetra-acetic acid and 1 part of polyethyleneimine mixed dissolution the shape in 30 parts of deionized waters
At solution；
Then 2 parts of ammonium molybdates or 2 parts of ammonium tungstates are added by mass fraction in the solution, thus the homogeneous polymerization formed
Object presoma；
Ultrafiltration is carried out after stirring to the homogeneous polymer presoma；
The homogeneous polymer precursor solution after ultrafiltration is spin-coated on the reflecting layer 12 and is obtained film,
In, spin speed 8000rpm, spin-coating time 30s；
The film is put into the center of the quartz ampoule in tube furnace, powder is placed in quartz ampoule inlet, to
Argon gas is passed through with 60sccm respectively in the quartz ampoule and hydrogen is passed through with 6~30sccm, wherein when the sulfur family powder is sulphur
When powder, argon gas is only passed through with 60sccm into the quartz ampoule；
Quartz ampoule is heated to 500~900 DEG C in 1h, obtains sample；
It anneals to the sample, then cooled to room temperature.
Embodiment two
Specifically, the preparation method of the photodetector includes:
Step 1: the substrate layer that material is silica is provided；
Step 2: ion sputtering method being used to grow one layer of material for the reflecting layer of gold, thickness on the substrate layer
For 50nm；
Step 3: by ethylenediamine tetra-acetic acid described in 1g (EDTA) and 1g polyethyleneimine (PEI) mixed dissolution 30mL go from
Solution is formed in sub- water；
Step 4: 2g ammonium molybdate ((NH being added in the solution4)6Mo7O24·4H2O homogeneous polymer presoma) is formed；
Step 5: to ultrafiltration is carried out after homogeneous polymer presoma stirring, molecular weight is less than 10000g mol-1；
Step 6: gained precursor solution being spin-coated on the reflecting layer, the film containing molybdenum is obtained, spin speed is
8000rpm, spin-coating time 30s；
Step 7: the film being put into the center of the quartz ampoule in tube furnace, selenium (Se) powder is placed in quartz
At tube inlet；
Step 8: respectively with 60sccm supplement argon gas and with 6sccm hydrogen make-up in the quartz ampoule in Xiang Suoshu tube furnace；
Step 9: the quartz ampoule being heated to 550 DEG C in 1h, and is kept for 20 minutes, the sample is obtained；
Step 10: continuing for the sample to be heated to 850 DEG C and anneal twice；
Step 11: by the sample cooled to room temperature, preparing the absorber；
Step 12: the electrode layer is prepared on the absorber using ion sputtering；
Step 13: obtaining photodetector.
Embodiment three
Further, in contrast to embodiment two, parameter setting is modified in step 2 in the present embodiment three, specifically,
Ion sputtering method is used to grow one layer of material for the reflecting layer of silver, with a thickness of 50nm on the substrate layer.
Example IV
Further, in contrast to embodiment two, parameter setting is modified in step 2 in the present embodiment four, specifically,
Template removal method is used to grow one layer of material for the reflecting layer of gold, with a thickness of 50nm on the substrate layer.
Embodiment five
Further, in contrast to example IV, parameter setting is modified in step 2 in the present embodiment five, specifically,
Template removal method is used to grow one layer of material for the reflecting layer of silver, with a thickness of 50nm on the substrate layer.
Embodiment six
Further, in contrast to embodiment two, parameter setting is modified in step 9 in the present embodiment six, specifically,
Quartz ampoule is heated to 550 DEG C in 1h, and is kept for 25 minutes.
Embodiment seven
Further, in contrast to embodiment two, parameter setting is modified in step 8 in the present embodiment nine, specifically,
Respectively with 60sccm supplement argon gas and with 30sccm hydrogen make-up in quartz ampoule into the tube furnace.
Embodiment eight
Further, in contrast to embodiment two, parameter setting is modified in step 8 in the present embodiment eight, specifically,
Respectively with 60sccm supplement argon gas and with 20sccm hydrogen make-up in quartz ampoule into the tube furnace.
Embodiment nine
Further, in contrast to embodiment two, parameter setting is modified in step 9 in the present embodiment seven, specifically,
Quartz ampoule is heated to 550 DEG C in 1h, and is kept for 30 minutes.
Embodiment ten
Further, in contrast to embodiment two, parameter setting is modified in step 9 in the present embodiment eight, specifically,
Quartz ampoule is heated to 550 DEG C in 1h, and is kept for 35 minutes.
Embodiment 11
Gained photodetector in embodiment two to ten is measured, photoelectric current 3 orders of magnitude about higher than dark current.
When absorber thickness is 14nm, the r.m.s. roughness of absorbed layer is 1.04nm, and absorber can be in the wave of 610nm to 690nm
Reach 90% or more absorption in long range；When absorber thickness is 18nm, the r.m.s. roughness of absorbed layer is
0.996nm, absorber can reach 90% or more absorption in the wave-length coverage of 590nm to 710nm；When absorber thickness is
When 22nm, the r.m.s. roughness of absorbed layer is 0.714nm, and absorber can reach in the wave-length coverage of 710nm to 800nm
85% or more absorption；When absorber thickness is 24nm, the r.m.s. roughness of absorbed layer is 0.522nm, and absorber can be
Reach 90% or more absorption in the wave-length coverage of 670nm to 780nm.These results indicate that provided by the invention based on close complete
The absorption bed roughness of the photodetector of U.S. absorber is low, can realize nearly perfect absorption in the partial region of visible waveband, and
And there is good photoresponse.
The above is only the preferred embodiment of the present invention, it is noted that above-mentioned preferred embodiment is not construed as pair
Limitation of the invention, protection scope of the present invention should be defined by the scope defined by the claims..For the art
For those of ordinary skill, without departing from the spirit and scope of the present invention, several improvements and modifications can also be made, these change
It also should be regarded as protection scope of the present invention into retouching.
Claims (12)
1. a kind of photodetector, which is characterized in that including absorber, the absorber successively includes substrate layer from bottom to top
(11), reflecting layer (12) and absorbed layer (13), wherein the absorbed layer (13) is transient metal sulfide film；The absorption
Electrode layer is set on layer (13).
2. a kind of photodetector according to claim 1, which is characterized in that the material of the substrate layer (11) is oxidation
Silicon.
3. a kind of photodetector according to claim 1, which is characterized in that the material of the reflecting layer (12) be gold or
Silver, with a thickness of 50~100nm.
4. a kind of photodetector according to claim 1, which is characterized in that the growing method of the reflecting layer (12) is
Ion sputtering or form removable method.
5. a kind of photodetector according to claim 1, which is characterized in that the material of the absorbed layer (13) is transition
Metal sulfide, with a thickness of 15~30nm.
6. a kind of photodetector according to claim 1, which is characterized in that the root mean square roughness of the absorbed layer (13)
Degree is less than 1nm.
7. a kind of photodetector according to claim 1, which is characterized in that the growing method of the absorbed layer (13) is
Polymer assisted deposition.
8. a kind of photodetector according to claim 7, which is characterized in that the polymer assisted deposition includes:
1 part of ethylenediamine tetra-acetic acid and 1 part of polyethyleneimine mixed dissolution formed in 30 parts of deionized waters by mass fraction molten
Liquid；
Then 2 parts of ammonium molybdates or 2 parts of ammonium tungstates are added by mass fraction in the solution, thus before the homogeneous polymer formed
Drive body；
Ultrafiltration is carried out after stirring to the homogeneous polymer presoma；
The homogeneous polymer precursor solution after the ultrafiltration is spin-coated on the reflecting layer (12) and is obtained film,
In, spin speed 8000rpm, spin-coating time 30s；
After the film is reacted with sulfur family gas, it is heated to 500~900 DEG C in 1h, obtains sample；
It anneals to the sample, then cooled to room temperature.
9. a kind of photodetector according to claim 8, which is characterized in that carry out the film and sulfur family gas anti-
The method answered specifically:
The film is put into the inside of the quartz ampoule in tube furnace, sulfur family powder is placed in quartz ampoule inlet, and to institute
It states and is passed through gas in quartz ampoule, the sulfur family gas after gasification is delivered to adequately being reacted at film.
10. a kind of photodetector according to claim 9, which is characterized in that be passed through gas in Xiang Suoshu quartz ampoule
Method are as follows:
Argon gas is passed through with 60sccm respectively into the quartz ampoule and hydrogen is passed through with 6~30sccm；
Wherein, when the sulfur family powder is sulphur powder, argon gas is only passed through with 60sccm into the quartz ampoule.
11. a kind of photodetector according to claim 1, which is characterized in that the material of the electrode layer is gold.
12. a kind of photodetector according to claim 1, which is characterized in that the electrode layer includes first electrode
(21) and second electrode (22), and the first electrode (21) and the second electrode (22) permutation are arranged in the absorbed layer
(13) on.
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