CN108172634A - A kind of photodetector - Google Patents

A kind of photodetector Download PDF

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Publication number
CN108172634A
CN108172634A CN201711381838.XA CN201711381838A CN108172634A CN 108172634 A CN108172634 A CN 108172634A CN 201711381838 A CN201711381838 A CN 201711381838A CN 108172634 A CN108172634 A CN 108172634A
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layer
photodetection
photodetector
dimensional material
electrode
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CN108172634B (en
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刘江涛
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Guizhou Minzu University
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Guizhou Minzu University
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
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    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/041—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
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    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
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    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H01L31/118—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors

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Abstract

The present invention provides a kind of photodetector, including：Photodetection layer and first electrode layer, first electrode layer are set to one side surface of photodetection layer, obtain photodetection structure；Photodetection layer is prepared by two-dimensional material or two-dimensional material heterojunction structure.It is very thin while by two-dimensional material or light sensitive two-dimensional material heterojunction structure（Thickness is less than 1nm（Nanometer））, minimum with probability that radiating particle reacts with this, false triggering probability is minimum；In addition, interatomic force is stronger in two-dimensional material plane, stable structure, the damage that radiating particle generates is smaller.

Description

A kind of photodetector
Technical field
The present invention relates to technical field of semiconductors more particularly to a kind of photodetectors.
Background technology
With the development of space flight and aviation technology, all kinds of novel artificial satellites, spacecraft are devoted in space.In order to Realize more functions, artificial satellite, spacecraft all carry a large amount of electronics, opto-electronic device.However, the space flight in space Device can be by various radiation, these radiation can cause integrated electronic chip serious damage, influence the performance of device, even These integrated electronic chips can be damaged, cause irremediable loss.
In addition, in nuclear industry, a large amount of intelligent chip is also needed, during particularly nuclear accident is speedily carried out rescue work, needs to use The precise electronics such as robot, opto-electronic device, nuclear weapon explosion equally can also form various electronics, photoelectron element serious It threatens.In use, each electronic device also can be by radiation effect, and so as to cause the failure of equipment, detector is wherein One more crucial device.
Invention content
In view of the above-mentioned problems, the present invention provides a kind of photodetector, efficiently solving existing photodetector cannot Radiation-resistant technical problem.
Technical solution provided by the invention is as follows：
A kind of photodetector, including：Photodetection layer and first electrode layer, the first electrode layer are set to the photoelectricity and visit One side surface of layer is surveyed, obtains photodetection structure；
The photodetection layer is prepared by two-dimensional material or two-dimensional material heterojunction structure.
It is further preferred that the two-dimensional material is graphene or molybdenum disulfide or tungsten disulfide.
It is further preferred that the two-dimensional material heterojunction structure is graphene-molybdenum disulfide or graphene-tungsten disulfide, Or molybdenum disulfide-tungsten disulfide.
It is further preferred that a basal layer and second electrode are further included in the photodetector, the basal layer and light It is isolated between electric detecting layer by air layer, the first electrode is located at the basal layer in the air layer surrounding and photoelectricity is visited It surveys between layer.
It is further preferred that the photodetector is formed by multiple photodetection folded structures, previous photodetection knot Electrode layer in structure is connect with the photodetection layer in latter photodetection structure by an insulating layer, in each photodetection structure Photodetection layer between pass through an air layer be isolated.
It is further preferred that further including a closed radioresistance container in the photodetector, each photodetection structure is put In the closed radioresistance container.
The advantageous effect that photodetector provided by the invention is brought is：
In the present invention, photodetection layer is made of two-dimensional material or two-dimensional material heterojunction structure, by two-dimensional material or two-dimentional material Expect very thin while heterojunction structure is light sensitive（Thickness is less than 1nm（Nanometer））, the probability that is reacted with this with radiating particle Minimum, false triggering probability is minimum；In addition, interatomic force is stronger in two-dimensional material plane, stable structure, radiating particle generates Damage it is smaller.
Secondly, in the present invention, basal layer and photodetection layer are separated using air layer, is conducive to reduce radiating particle The influence to channel layer and grid such as secondary radiation, defect, spur for being generated when interacting with basal layer improves device Reliability.
Again, photodetector in the present invention is by 2 or multiple photodetection folded structures form.Due to radiating grain Son reacts the probability very little for generating counterfeit signal with multiple photodetection layers simultaneously, is greatly reduced or eliminated with this by radiating institute Lead to the probability of counterfeit signal.It is important to note that traditional photodetector is usually thicker, less efficient, radiating particle The probability that counterfeit signal is generated with working media simultaneous reactions is larger, and light is that light intensity will by reaching the second layer after one layer of working media Weaken significantly, the reliability of device and improper is improved using stacked system, and two-dimensional material or two-dimensional material hetero-junctions light are inhaled Yield is suitable（2.3-20%）, it is efficient, while the probability for generating counterfeit signal is small, and superposition design method may be used.
Finally, photodetection structure is placed in vacuum tightness radioresistance container and obtains photodetector, effectively reduced and visit While surveying the exposure dose of device, reduce radiating particle and influence of the secondary radiation to detector caused by air reaction.
Description of the drawings
Below by a manner of clearly understandable, preferred embodiment is described with reference to the drawings, to above-mentioned characteristic, technical characteristic, Advantage and its realization method are further described.
Fig. 1 is a kind of embodiment structure diagram of photodetector in the present invention；
Fig. 2 is photodetector another embodiment structure diagram in the present invention；
Fig. 3 is photodetector another embodiment structure diagram in the present invention；
Fig. 4 is photodetector another embodiment structure diagram in the present invention.
Reference numeral：
1- photodetection layers, 2- first electrodes, 3- basal layers, 4- second electrodes, 5- air layers, 6- insulating layers, the first air of 7- Layer, the second air layers of 8-, 9- the second photodetection layers, 10- third electrodes, 11- the first photodetection layers, 12- radioresistance containers.
Specific embodiment
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, control is illustrated below The specific embodiment of the present invention.It should be evident that the accompanying drawings in the following description is only some embodiments of the present invention, for For those of ordinary skill in the art, without creative efforts, other are can also be obtained according to these attached drawings Attached drawing, and obtain other embodiments.
It is as shown in Figure 1 a kind of embodiment structure diagram of photodetector provided by the invention, it can from figure Go out, include in the photodetector：Photodetection layer 1 and first electrode layer 2, the first electrode layer are set to photodetection One side surface of layer, obtains photodetection structure；Photodetection layer is prepared by two-dimensional material or two-dimensional material heterojunction structure.
In the present embodiment, photodetection layer is prepared by two-dimensional material, and the specific two-dimensional material is graphene/bis- Molybdenum sulfide/tungsten disulfide etc. by the optics of each two-dimensional material, electricity, mechanics, thermal property, reacts with radiating particle Probability is minimum, substantially increases the capability of resistance to radiation of photodetector.In one example, photodetection layer is prepared by single graphene It forms, during the work time, when there is light incidence, the resistance value of graphene changes with the variation of illumination, passes through electrode with this The intensity of incident light can be measured by measuring the resistance value of graphene.
In the present embodiment, photodetection layer is prepared by two-dimensional material heterojunction structure, and the specific two-dimensional material is different Matter structure is graphene-molybdenum disulfide or graphene-tungsten disulfide or molybdenum disulfide-tungsten disulfide etc..In one example, light Electric detecting layer is made of single graphene-molybdenum disulfide, during the work time, when there is light incidence, single graphene-molybdenum disulfide Resistance value will change, and can measure the intensity of incident light by the resistance value of electrode measurement list graphene-molybdenum disulfide with this.
The above embodiment is improved to obtain present embodiment, as shown in Fig. 2, in the present embodiment, photoelectricity is visited In survey device other than including photodetection layer 1 and first electrode layer 2, a basal layer 3 and second electrode 4 are further included, wherein, base It is isolated between bottom 3 and photodetection layer by air layer 5, first electrode is located at basal layer and photodetection in air layer surrounding Between layer, it is conducive to reduce generated secondary radiation when radiation interacts with substrate, defect, spur etc. to two with this The influence of the heterogeneous junction resistance of material and photoelectric respone is tieed up, improves the reliability of device.
The above embodiment is improved to obtain present embodiment, in the present embodiment, photodetector is by multiple Photodetection folded structures form, the electrode layer in previous photodetection structure and the photodetection in latter photodetection structure Layer is connected by an insulating layer, is isolated between the photodetection layer in each photodetection structure by an air layer.
In the present embodiment, photodetector includes Heterolamellar photovoltaic detecting layer, and passes through between each photodetection layer Air layer is isolated.The probability very little of counterfeit signal is generated since radiating particle reacts simultaneously with multiple photodetection layers, is reduced with this Or counterfeit signal of the exclusion caused by radiation.
In one example, as shown in figure 3, including two photodetection structures in the photodetector, i.e., including first 11 and second photodetection layer 9 of photodetection layer further includes first electrode 2, second electrode 4, third electrode 10, base layer 3, the One air layer 7, the second air layer 8 and insulating layer 6, wherein, pass through insulating layer between the first photodetection layer and second electrode 4 6 connections, and be isolated between the first photodetection layer 11 and the second photodetection layer 9 by the second air layer 8, the first photodetection It is isolated between layer 11 and basal layer 3 by the first air layer 7.
The above embodiment is improved to obtain present embodiment, in the present embodiment, is also wrapped in photodetector A closed radioresistance container is included, each photodetection structure is placed in closed radioresistance container, wherein, radioresistance container is reducing The exposure dose of detector, vacuum environment is reducing secondary radiation caused by radiating particle and air reaction to detector It influences.
In one example, as shown in figure 4, in the photodetector, photodetector includes two photodetection knots Structure that is, including the first photodetection layer 11 and the second photodetection layer 9, further includes first electrode 2, second electrode 4, third electrode 10th, the 3, first air layer 7 of base layer, the second air layer 8 and insulating layer 6, wherein, the first photodetection layer and second electrode 4 Between connected by insulating layer 6, and between the first photodetection layer 11 and the second photodetection layer 9 by the second air layer 8 every From being isolated between the first photodetection layer 11 and basal layer 3 by the first air layer 7.In addition, it is also wrapped in the photodetector A radioresistance container 12 is included, and the photodetector is placed in the radioresistance container.
It should be noted that above-described embodiment can be freely combined as needed.The above is only the preferred of the present invention Embodiment, it is noted that for those skilled in the art, in the premise for not departing from the principle of the invention Under, several improvements and modifications can also be made, these improvements and modifications also should be regarded as protection scope of the present invention.

Claims (6)

1. a kind of photodetector, which is characterized in that the photodetector includes：Photodetection layer and first electrode layer, The first electrode layer is set to one side surface of photodetection layer, obtains photodetection structure；
The photodetection layer is prepared by two-dimensional material or two-dimensional material heterojunction structure.
2. photodetector as described in claim 1, which is characterized in that the two-dimensional material for graphene or molybdenum disulfide or Tungsten disulfide.
3. photodetector as described in claim 1, which is characterized in that the two-dimensional material heterojunction structure is graphene-two Molybdenum sulfide or graphene-tungsten disulfide or molybdenum disulfide-tungsten disulfide.
4. the photodetector as described in claims 1 or 2 or 3 a, which is characterized in that base is further included in the photodetector Bottom and second electrode are isolated between the basal layer and photodetection layer by air layer, and the first electrode is in the sky Gas-bearing formation surrounding is between the basal layer and photodetection layer.
5. the photodetector as described in claims 1 or 2 or 3, which is characterized in that the photodetector is visited by multiple photoelectricity Geodesic structure is formed by stacking, and the electrode layer in previous photodetection structure passes through with the photodetection layer in latter photodetection structure One insulating layer connects, and is isolated between the photodetection layer in each photodetection structure by an air layer.
6. photodetector as claimed in claim 5, which is characterized in that a closed anti-spoke is further included in the photodetector Container is penetrated, each photodetection structure is placed in the closed radioresistance container.
CN201711381838.XA 2017-12-20 2017-12-20 Photoelectric detector Active CN108172634B (en)

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Cited By (7)

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CN109446937A (en) * 2018-10-12 2019-03-08 贵州民族大学 Shield lower finger-print recognising instrument
CN110071191A (en) * 2019-04-18 2019-07-30 贵州民族大学 A kind of two-dimensional hetero-junction photovoltaic cell
CN110289334A (en) * 2019-07-02 2019-09-27 电子科技大学 A kind of photodetector
CN112271230A (en) * 2020-05-20 2021-01-26 深圳大学 Working electrode, preparation method and application thereof, and photoelectric detector
CN113299779A (en) * 2021-05-26 2021-08-24 哈尔滨工业大学 Molybdenum disulfide/tungsten disulfide infrared two-color detector and preparation method thereof
CN113555417A (en) * 2021-07-20 2021-10-26 中国科学院半导体研究所 Rectifier
CN114324537A (en) * 2021-12-13 2022-04-12 中国科学院上海微系统与信息技术研究所 Photoelectric integrated biosensor and biomolecule detection equipment

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CN106197687A (en) * 2016-07-19 2016-12-07 中国科学院重庆绿色智能技术研究院 A kind of micro-metering bolometer based on graphene quantum dot
CN106328720A (en) * 2016-09-07 2017-01-11 鲍小志 Graphene-phosphorus heterojunction photodetector and manufacturing method
CN107026217A (en) * 2017-04-10 2017-08-08 华中科技大学 A kind of two waveband thin-film photodetector and preparation method thereof

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Publication number Priority date Publication date Assignee Title
CN105789367A (en) * 2016-04-15 2016-07-20 周口师范学院 Asymmetrical electrode two-dimensional material/graphene heterojunction cascaded photodetector and manufacturing method thereof
CN106197687A (en) * 2016-07-19 2016-12-07 中国科学院重庆绿色智能技术研究院 A kind of micro-metering bolometer based on graphene quantum dot
CN106328720A (en) * 2016-09-07 2017-01-11 鲍小志 Graphene-phosphorus heterojunction photodetector and manufacturing method
CN107026217A (en) * 2017-04-10 2017-08-08 华中科技大学 A kind of two waveband thin-film photodetector and preparation method thereof

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109446937A (en) * 2018-10-12 2019-03-08 贵州民族大学 Shield lower finger-print recognising instrument
CN109446937B (en) * 2018-10-12 2022-03-01 贵州民族大学 Finger print recognition instrument under screen
CN110071191A (en) * 2019-04-18 2019-07-30 贵州民族大学 A kind of two-dimensional hetero-junction photovoltaic cell
CN110289334A (en) * 2019-07-02 2019-09-27 电子科技大学 A kind of photodetector
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CN112271230A (en) * 2020-05-20 2021-01-26 深圳大学 Working electrode, preparation method and application thereof, and photoelectric detector
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CN113555417A (en) * 2021-07-20 2021-10-26 中国科学院半导体研究所 Rectifier
CN113555417B (en) * 2021-07-20 2024-06-07 中国科学院半导体研究所 Rectifier device
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