CN105738936B - Space radiation environment and effect combination detecting structure - Google Patents
Space radiation environment and effect combination detecting structure Download PDFInfo
- Publication number
- CN105738936B CN105738936B CN201610104119.2A CN201610104119A CN105738936B CN 105738936 B CN105738936 B CN 105738936B CN 201610104119 A CN201610104119 A CN 201610104119A CN 105738936 B CN105738936 B CN 105738936B
- Authority
- CN
- China
- Prior art keywords
- layer
- neutron
- proton
- semiconductor
- electronics
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T3/00—Measuring neutron radiation
- G01T3/02—Measuring neutron radiation by shielding other radiation
Abstract
The invention discloses the detecting structures of a kind of space radiation environment and effect combination, including by be mainly used for removing the internal layer shielded layer of neutron and gamma ray interference and being mainly used for remove electronics, proton, heavy ion interference the detection shell that forms of outer shield layer i.e. metal screen layer, setting thin metal layer one is for stopping the influence of space sunlight in shell, successively three-layer semiconductor detecting layer is arranged in interval below thin metal layer, for the detection to electronics, proton, heavy ion, neutron, gamma ray；Successively double layer of metal thin layer is arranged in interval again below semiconductor probe layer, carries out interpretation with the charging potential for generating to charged particles such as electronics, proton, the heavy ions for passing through semiconductor detector and and realizes shielding to it；Then successively interval two layers of semiconductor probe layer of setting and the polymer foil that recoil proton is generated for neutron being clipped between two layers of semiconductor probe layer, two layers of semiconductor probe layer are respectively used to the detection to neutron and gamma ray again below double layer of metal thin layer.
Description
Technical field
The invention belongs to space environments and effect detection technology field, and in particular to a kind of space radiation environment and effect group
The detecting structure of conjunction.
Background technique
Spacecraft is influenced in the motion process in space by space radiation environment and radiation effect, space radiation environment
It is the essential environmental factors for causing Spacecraft Material and device performance degeneration even to fail, wherein space particle radiation environment master
It to include celestial body trapping radiation zone, solar cosmic ray, galactic cosmic rays, neutron etc..In addition, space radiation environment can cause
Single particle effect, total dose effect, surface charging and discharging effects, interior charged effect and displacement damage effect etc., these effects are deposited
It will cause Spacecraft Material or device generation on-orbit fault, or even failure.
For this purpose, development space environment and effect detection all have great importance in aerospace engineering and in science.First is that
It can be used for influence of the analysis space environment to spacecraft various aspects of performance, establish space environment effect ground simulation experiment method
Premise and basis.Second is that can be used as the significant data supplement of space weather forecast and space science research.Carry out third is that becoming
The important foundation of spacecraft on-orbit fault analysis and forecasting and warning.Fourth is that establishing the important branch of space environment environment and effect model
Support.
Currently, mainly using telescope method about the detection of space charged particle both at home and abroad, two to three layers partly lead is utilized
Body probe detects electronics, proton and heavy ion, is in the prior art with three layers of semiconductor for example, see Fig. 1, Fig. 1
Sonde configuration schematic diagram, wherein three layers of semiconductor respectively detects electronics, proton and heavy ion.And the spy to ray
Survey, some semiconductor probes, some detects with gas detector, also useful scintillation crystal detected (referring specifically to " grain
Sub- Detection Techniques " Wang Xiaolian etc. writes, China Science Tech Publishing House).
However, the space environment effect that single factors are mainly carried out in space environment and effect detection at present both at home and abroad is visited
It surveys, the disadvantage is that environment or Effect factor are single.If to be detected to multiple environment or effect, more set load are needed, are brought
The problems such as weight is big, volume is big, power consumption is high.It can be seen that proposing to utilize a set of detection device, it is each to be able to carry out integrative detection
Factor in kind space environment is highly desirable.
Summary of the invention
In consideration of it, the purpose of the present invention is to provide the detecting structure of a kind of space radiation environment and effect combination, the spy
The geodesic structure status in-orbit for spacecraft, the various influence factors in conjunction with present in different spaces radiation environment and effect are real
Integrated, the miniaturization, lightness using space environment and effect detection are showed.
The technical solution adopted by the invention is as follows:
The detecting structure of space radiation environment and effect combination, including by being mainly used for removing neutron and gamma ray interference
Internal layer shielded layer and be mainly used for remove electronics, proton, heavy ion interference outer shield layer i.e. metal screen layer composition
Shell is detected, detection case top is covered with cover board, and the opening of incident space radiation, the setting of cover board bottom are provided among cover board
Thin metal layer one is for stopping the influence of space sunlight, successively interval setting three-layer semiconductor detection below thin metal layer
Layer, for the detection to electronics, proton, heavy ion, neutron, gamma ray；Successively interval setting again below semiconductor probe layer
Double layer of metal thin layer, with the charging electricity for being generated to charged particles such as electronics, proton, the heavy ions for passing through semiconductor detector
Position carries out interpretation and and realizes shielding to it；Then successively two layers of semiconductor probe layer is arranged in interval again below double layer of metal thin layer
And it is clipped in the polymer foil that recoil proton is generated for neutron between two layers of semiconductor probe layer, two layers of semiconductor probe
Layer is respectively used to the detection to neutron and gamma ray.
Wherein, thin metal layer one is identical with the material of every layer of thin metal layer in double layer of metal thin layer.
Wherein, semiconductor probe layer is PIN type semiconductor, specially lithium DRIFT TYPE or golden silicon junction etc..What it was detected
Signal includes electronics, proton, heavy ion, neutron, gamma ray, and every layer of thickness is determined according to the energy range of quasi- detection.
Wherein, identical with thickness for the material to neutron with the semiconductor probe layer of the detection of gamma ray.
Wherein, thin metal layer one with a thickness of micron dimension.
Wherein, the material of thin metal layer one and thin metal layer is the metal material of the low atomic numbers such as Al or Cu.
Wherein, the respective thickness of double layer of metal thin layer is penetrating three-layer semiconductor detection according to electronics, proton and heavy ion
The highest energy of dump energy and quasi- shielding during layer determines.
Further, polymer foil is the polymer material that polyethylene thin layer etc. only generates recoil proton to neutron.
Further, polymer foil with a thickness of 0.01~1mm.
Wherein, outer shield layer is the heavy metal materials such as W, the material of internal layer shielded layer be respectively liquified hydrogen, liquid water or
The higher polymer material of hydrogen content.
The distance between every Layer Detection device is depending on the design of detector, the usually certain value between 1~10mm.This
Invention passes through Combinatorial Optimization design and algorithm optimization, benefit compared with the structure of existing three-layer semiconductor Space environment detection device
With certain thickness semiconductor detector, may be implemented to fill electronics, proton, heavy ion, neutron, gamma ray, surface completely
The identification and detection of electric potential, charge inside current potential etc..
Detailed description of the invention
Fig. 1 is the detecting structure schematic diagram with three-layer semiconductor for being used for spacecraft space environment in the prior art.Its
In, 1- thin metal layer, with a thickness of micron dimension, for stopping the influence of space sunlight；2,3,4- semiconductor detectors are (such as
PIN type semiconductor), for the detection to electronics, proton, heavy ion；5- outer shield layer, predominantly metal screen layer, are used for
Remove the interference of electronics, proton, heavy ion etc.；6- internal layer shielded layer is mainly used for removing the interference of neutron and gamma ray.
Fig. 2 is the space radiation environment of one embodiment of the present invention and the detecting structure schematic diagram of effect combination, wherein
1- thin metal layer, with a thickness of micron dimension, for stopping the influence of space sunlight；2,3,4- semiconductor detector (such as PIN type
Semiconductor), for the detection to electronics, proton, heavy ion, neutron, gamma ray；4,5- thin metal layers, for charging electricity
The interpretation and shielding to electronics, proton, heavy ion of position；7,9- semiconductor detectors (such as PIN type semiconductor), for neutron
With the detection of gamma ray；8- polymer foil generates recoil proton for neutron；10- outer shield layer, predominantly metal
Shielded layer, for removing the interference of electronics, proton, heavy ion etc.；11- internal layer shielded layer is mainly used for removing neutron and gamma
The interference of ray.
Fig. 3 is the charged particle energy loss figure in the detector of an embodiment of the present invention.
Specific embodiment
The satellite propulsion unit constituted with reference to the accompanying drawing to the alpha-decay propulsion unit with rigid basement of the invention carries out
It further illustrates, which is only exemplary, it is no intended to limit the scope of the invention.
Referring to fig. 2, Fig. 2 shows the space radiation environment of one embodiment of the present invention and the detecting structure of effect combination
Schematic diagram, wherein the detecting structure of the space radiation environment and effect combination, including penetrated by being mainly used for removal neutron and gamma
The internal layer shielded layer 11 and be mainly used for removing the outer shield layer 10 i.e. metal screen that electronics, proton, heavy ion interfere that line interferes
The side wall of the detection shell of layer composition is covered, detection case top is covered with cover board, and cover board is metal layer, and material can be with external shielding layer
10 is identical, and the opening of incident space radiation is provided among cover board, and thin metal layer 1 is arranged for stopping space in cover board bottom
Successively three-layer semiconductor detecting layer (semiconductor probe layer 2, semiconductor is arranged in interval in the influence of sunlight, one 1 lower section of thin metal layer
Detecting layer 3, semiconductor probe layer 4), for the detection to electronics, proton, heavy ion, neutron, gamma ray, semiconductor layer knot
Structure and thickness are depending on the energy of quasi- detection；Successively two layers of gold medal is arranged in interval again for the lower section of three-layer semiconductor detecting layer 2,3,4
Belong to thin layer 5,6, thin metal layer thickness is depending on quasi- detection current potential, for detecting across three-layer semiconductor detecting layer 2,3,4
Charging potential caused by the charged particles such as electronics, proton, heavy ion later simultaneously shields it；Then double layer of metal thin layer
5,6 lower sections are successively spaced two layers of semiconductor probe layer 7,9 of setting again and are clipped between two layers of semiconductor probe layer 7,9 and are used for
Neutron generates the polymer foil 8 of recoil proton, and thickness is depending on the sensitivity that the material of selection and needs detect, and two layers
7,9 layers of detection being respectively used to neutron and gamma ray of semiconductor probe.
Specifically, layer 1, layer 5 and layer 6 are the thin metal layer of thin metal layer, especially the 1st layer, purpose mainly hinders
It keeps off the sunshine the influence of light, therefore, it should meet under the premise of stopping sunlight, it is thin as far as possible, to avoid the screen effect to particle,
Thickness should be micron dimension, and usually 1~10 micron.
Layer 2, layer 3 and layer 4, corresponding semiconductor detector D1, D2, D3, can be selected PIN type semiconductor detector, such as here
Lithium DRIFT TYPE or golden silicon junction etc., the signal of detection include electronics, proton, heavy ion, neutron, gamma ray.Every layer
Thickness determines that thickness range is usually 0.1~5mm according to the energy range of quasi- detection.If need to be to entire detection energy model
In enclosing, to the energy of particle can further division, the quantity of detector can be increased.
Layer 5, layer 6 be thin metal layer, such as Al layer, the purpose is to shielded layer 2, layer 3, layer 4 later penetrate electronics, proton and
Heavy ion, while realizing the detection to charging potential.Its thickness is according to electronics, proton and heavy ion in penetrated bed 2, layer 3 and layer 4
During dump energy and the highest energy of quasi- shielding determine that thickness range is usually 0.01~1mm.
Layer 7 and layer 9 correspond to semiconductor detector D4, D5, for the detection to neutron and gamma ray；Layer 8 is polymerization
Object thin layer (such as polyethylene thin layer) generates recoil proton for neutron；After neutron and gamma ray penetrated bed 7 and layer 9, Ying Bao
The effect that card generates is consistent, and 8 main purpose of layer is that neutron is allowed to generate recoil proton, will after recoil proton acts on layer 9
Additional signal is generated, which is used to distinguish the content and energy of neutron.
Layer 10 is outer shield layer, predominantly metal screen layer, such as W thin metal layer, for remove electronics, proton, again from
The interference of son, gamma ray etc.；11 be internal layer shielded layer, is mainly used for removing the interference of neutron, ingredient meets to neutron
Shielding.
Implementation process is as follows:
Firstly, ground staking-out work.Respectively to D1, D2, D3 to electronics, proton, heavy ion, neutron, gamma ray sound
It should be demarcated, D4, D5 demarcate the response of neutron and gamma ray.
Second, in detection process, the equal biasing of D1, D2, D3, D4, D5 detector, layer 5 and 6 metal layer of layer keep outstanding
It is floating, i.e., it insulate with surrounding, to detect current potential.
Third realizes the detection of neutron and gamma ray according to space exploration signal.If there is no layer 8, then neutron
It should be consistent with gamma ray in the signal for passing through layer 7 (D4) and layer 9 (D5), after increasing layer 8, be generated for neutron anti-
Proton is rushed, then the signal of D5 also includes the signal of a part of neutron recoil proton.It is poor by the detectable signal and D4 detectable signal of D5
It is different, the information of neutron can be gone out with interpretation, while the also information of available gamma ray.
4th, it is remaining after D1, D2, D3 detectable signal are removed by the obtained neutron of D4 and D5 and gamma ray information
The as detection information of electronics, proton, heavy ion.When charged particle injects sensor D1, D2, D3 by collimator, fifty-fifty
Sedimentary energy in conductor detector generates corresponding electron hole pair in a manner of ionizing, these electron hole pairs are in high voltage electric field
Under the action of, it is pooled to output end and generates charge pulse.The charge pulse height and particle sink in the semiconductor detector
Long-pending energy is directly proportional.
Energy loss of the particle in detector, is reflected in and is electrically just different pulse height.Different-energy it is each
Energy loss of the kind particle in detector is different, corresponding to different pulse heights, passes through the identification to pulse height, so that it may
To remove those very low particles of energy loss in detector, to carry out the identification of particle.It is this referring specifically to Fig. 3, Fig. 3
Invent the charged particle energy loss figure in the detector of an embodiment.Abscissa is projectile energy in figure, and ordinate is grain
The off-energy of son in the sensor.Energy loss of the electronics in detector is lower, and corresponding pulse height is also low, chooses one
Fixed pulse height amplitude 1, the pulse height under amplitude 1 are exactly electronics, and between amplitude 1 and amplitude 2 is exactly proton,
On amplitude 2 is other heavy ions.Identification threshold analysis is carried out to signal and meets repeatedly and handles, particle spectra can be obtained
Information is shown in Fig. 4.Therefore, by the analysis to the pulse height in such as Fig. 3, it can analyze the energy of electronics, proton and heavy ion
And quantity.
Space radiation environment and effect covering scope is wide, factor is more, most important space radiation environment be electronics, proton,
Heavy ion, neutron, gamma ray, and Space Radiation Effects threaten one of larger factor to imitate for surface charging and discharging effects and interior electrification
It answers.
Firstly, the influence using the thin metal layer shielding solar photon of layer to detector.
Secondly, the characteristic sensitive to electronics, proton, heavy ion, neutron, gamma ray using semiconductor detector, real
The detection of existing several environment；While realization using metal layer to electronics, proton, heavy ion shielding, charging potential is realized
Detection, at the same it is insensitive to neutron and gamma ray using metal layer, realize the high-penetration of neutron and gamma ray；Using partly leading
Bulk detector is sensitive to neutron and gamma ray, while neutron and high molecular material can produce the characteristic of recoil proton, realizes
The resolution of neutron and gamma ray.
Third obtains energy and the influence of neutron and gamma ray first by the resolution of neutron and gamma ray；By metal layer
Potentiometric analysis go out the characteristics of surface charging and discharging effects and interior charged effect；Electronics, proton, heavy ion, neutron and gamma are penetrated
The detector signal of line removes known neutron and gamma ray signal, that is, is left the detectable signal of electronics, proton and heavy ion,
Meet analysis and anticoincidence analysis to the signal of three layers or multi-layer detector, using the methods of impulse amplitude method, it can be achieved that
The discrimination of electronics, the energy of proton and heavy ion and flux.
The present invention, which is respectively combined, is utilized a certain number of metal layers, semiconductor probe layer and polymer foil, Ke Yishi
Existing shielding of the metal layer to high energy particle such as electronics, proton and heavy ion, and neutron and gamma ray then can be with complete penetration gold
Belong to layer, realizes the effective discrimination and separation of neutron and gamma ray using metal layer in this way.Through semiconductor detector in
The recoil proton effect of son in the polymer, may be implemented effective discrimination of varying environment element.
Although the detailed description and description of the specific embodiments of the present invention are given above, it should be noted that
We can carry out various equivalent changes and modification to above embodiment according to the concept of the present invention, and generated function is made
It, should all be within protection scope of the present invention when with the spirit still covered without departing from specification and attached drawing.
Claims (10)
1. the detecting structure of space radiation environment and effect combination, including by being mainly used for removing neutron and gamma ray interference
Internal layer shielded layer and be mainly used for remove electronics, proton, heavy ion interference outer shield layer i.e. metal screen layer composition spy
Shell is surveyed, detection case top is covered with cover board, and the opening of incident space radiation, cover board bottom setting gold are provided among cover board
Belong to thin layer one so that for stopping the influence of space sunlight, successively setting three-layer semiconductor in interval detects one lower section of thin metal layer
Layer, for the detection to electronics, proton, heavy ion, neutron, gamma ray；Successively interval setting again below semiconductor probe layer
Double layer of metal thin layer, with the charging electricity for being generated to the electronics, proton or heavy ion charged particle that pass through semiconductor detector
Position carries out interpretation and and realizes shielding to it；Then successively two layers of semiconductor probe layer is arranged in interval again below double layer of metal thin layer
And it is clipped in the polymer foil that recoil proton is generated for neutron between two layers of semiconductor probe layer, two layers of semiconductor probe
Layer is respectively used to the detection to neutron and gamma ray.
2. the detecting structure of space radiation environment as described in claim 1 and effect combination, wherein one He of thin metal layer
The material of the double layer of metal thin layer is identical.
3. the detecting structure of space radiation environment as described in claim 1 and effect combination, wherein semiconductor probe layer is
PIN type semiconductor, specially lithium DRIFT TYPE or golden silicon junction.
4. the detecting structure of space radiation environment as claimed in claim 3 and effect combination, wherein PIN type semiconductor probe
Signal include electronics, proton, heavy ion, neutron, gamma ray, every layer of thickness is according to the energy range of quasi- detection come true
It is fixed.
5. the detecting structure of space radiation environment as claimed in claim 4 and effect combination, wherein for neutron and gamma
The material of the semiconductor probe layer of the detection of ray is identical with thickness.
6. the detecting structure of space radiation environment as described in claim 1 and effect combination, wherein the thickness of thin metal layer one
For micron dimension.
7. the detecting structure of space radiation environment as claimed in claim 3 and effect combination, wherein thin metal layer one and metal
The material of thin layer is Al or Cu.
8. the detecting structure of space radiation environment as claimed in claim 7 and effect combination, wherein double layer of metal thin layer is respectively
Thickness according to dump energy during penetrating three-layer semiconductor detecting layer of electronics, proton and heavy ion and quasi- shielding
Highest energy determine.
9. the detecting structure of space radiation environment as described in claim 1 and effect combination, wherein polymer foil is poly- second
Alkene layer material, polymer foil with a thickness of 0.01 ~ 1mm.
10. the detecting structure of space radiation environment as described in claim 1 and effect combination, wherein outer shield layer is attached most importance to
Metal material, the material of internal layer shielded layer are respectively liquified hydrogen, liquid water or the higher polymer material of hydrogen content.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610104119.2A CN105738936B (en) | 2016-02-25 | 2016-02-25 | Space radiation environment and effect combination detecting structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610104119.2A CN105738936B (en) | 2016-02-25 | 2016-02-25 | Space radiation environment and effect combination detecting structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105738936A CN105738936A (en) | 2016-07-06 |
| CN105738936B true CN105738936B (en) | 2019-04-09 |
Family
ID=56249441
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610104119.2A Active CN105738936B (en) | 2016-02-25 | 2016-02-25 | Space radiation environment and effect combination detecting structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105738936B (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107894608B (en) * | 2017-12-06 | 2023-09-26 | 中国工程物理研究院激光聚变研究中心 | Ultra-wideband neutron detector based on optical refractive index change |
| CN108169785A (en) * | 2017-12-07 | 2018-06-15 | 山东航天电子技术研究所 | A kind of component Space Radiation Effects detection device |
| CN108072888B (en) * | 2017-12-15 | 2019-10-29 | 北京卫星环境工程研究所 | Medium-Earth Orbit space environment and the integrated detection device of effect |
| CN108106667B (en) * | 2017-12-15 | 2019-11-26 | 北京卫星环境工程研究所 | Geostationary orbit space environment and the integrated detection device of effect |
| CN109581471B (en) * | 2018-11-27 | 2023-02-28 | 山东航天电子技术研究所 | Multilayer combined type energy meter |
| CN111273334A (en) * | 2019-12-26 | 2020-06-12 | 兰州空间技术物理研究所 | Composite energy particle detector for deep space detection and design method thereof |
| CN111736198A (en) * | 2020-06-19 | 2020-10-02 | 中国科学院西安光学精密机械研究所 | Compact gamma ray detection optical system and detection method |
| CN114063141B (en) * | 2021-11-22 | 2024-03-26 | 山东大学 | Ultra-thin anti-coincidence fast neutron detection structure and neutron energy spectrum acquisition method |
| CN113820737B (en) * | 2021-11-22 | 2022-02-08 | 山东大学 | Compact anti-coincidence fast neutron detection structure and method for acquiring neutron energy spectrum |
| CN114415225A (en) * | 2021-12-20 | 2022-04-29 | 核工业西南物理研究院 | Nuclear fusion alpha particle loss detector |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101907662A (en) * | 2009-06-04 | 2010-12-08 | 中国科学院空间科学与应用研究中心 | Single-event effect detection device and method |
| CN102798878A (en) * | 2012-07-26 | 2012-11-28 | 北京卫星环境工程研究所 | Flight test device for detecting space radiation environment using solar battery chip, and method thereof |
| CN103698801A (en) * | 2013-11-29 | 2014-04-02 | 西北核技术研究所 | Multi-layer scintillation detector and measurement method for high-energy proton and neutron energy spectrum measurement |
| JP2015004594A (en) * | 2013-06-21 | 2015-01-08 | 株式会社東芝 | Radiation detector |
| CN104962128A (en) * | 2015-06-09 | 2015-10-07 | 上海卫星工程研究所 | Preparation and coating method of total dose radiation shielding coating layer material |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2900242B1 (en) * | 2006-04-19 | 2008-08-22 | Aeds Ccr | METHOD AND DEVICE FOR CHARACTERIZING SENSITIVITY TO ENERGY INTERACTIONS IN AN ELECTRONIC COMPONENT |
-
2016
- 2016-02-25 CN CN201610104119.2A patent/CN105738936B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101907662A (en) * | 2009-06-04 | 2010-12-08 | 中国科学院空间科学与应用研究中心 | Single-event effect detection device and method |
| CN102798878A (en) * | 2012-07-26 | 2012-11-28 | 北京卫星环境工程研究所 | Flight test device for detecting space radiation environment using solar battery chip, and method thereof |
| JP2015004594A (en) * | 2013-06-21 | 2015-01-08 | 株式会社東芝 | Radiation detector |
| CN103698801A (en) * | 2013-11-29 | 2014-04-02 | 西北核技术研究所 | Multi-layer scintillation detector and measurement method for high-energy proton and neutron energy spectrum measurement |
| CN104962128A (en) * | 2015-06-09 | 2015-10-07 | 上海卫星工程研究所 | Preparation and coating method of total dose radiation shielding coating layer material |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105738936A (en) | 2016-07-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105738936B (en) | Space radiation environment and effect combination detecting structure | |
| Bonomi et al. | Applications of cosmic-ray muons | |
| CN103954988B (en) | A kind of particles detection and data acquisition treatment method thereof | |
| Mitrofanov et al. | Dynamic albedo of neutrons (DAN) experiment onboard NASA’s Mars Science Laboratory | |
| Baccani et al. | The MIMA project. Design, construction and performances of a compact hodoscope for muon radiography applications in the context of archaeology and geophysical prospections | |
| Nishino et al. | Solar‐wind proton access deep into the near‐Moon wake | |
| Okubo et al. | Imaging the density profile of a volcano interior with cosmic-ray muon radiography combined with classical gravimetry | |
| Cully et al. | Electrostatic structure around spacecraft in tenuous plasmas | |
| Kedar et al. | Muon radiography for exploration of Mars geology | |
| Chilingarian et al. | Aragats Space-Environmental Centre: status and SEP forecasting possibilities | |
| CN108072888A (en) | Medium-Earth Orbit space environment and the integrated detection device of effect | |
| Gershman et al. | MESSENGER observations of solar energetic electrons within Mercury's magnetosphere | |
| Grimani et al. | A Hydrogenated amorphous silicon detector for Space Weather Applications | |
| Mitrofanov et al. | Search for water in Martian soil using global neutron mapping by the Russian HEND instrument onboard the US 2001 Mars Odyssey spacecraft | |
| Yan et al. | The regular features recorded by the Langmuir probe onboard the low earth polar orbit satellite CSES | |
| Davis et al. | An enhancement of the ionospheric sporadic‐E layer in response to negative polarity cloud‐to‐ground lightning | |
| Kuo et al. | Extraterrestrial neutrinos and Earth structure | |
| CN113189633B (en) | Medium and high energy particle detector | |
| CN106680859B (en) | Sonde configuration and omnidirectional's detector with it | |
| CN106610500B (en) | A kind of multidirectional high energy electron detection device based on distributed multiple satellites | |
| Aprile et al. | The polarization sensitivity of the liquid xenon imaging telescope | |
| Cesarini et al. | Interplanetarymedium monitoring with LISA: Lessons from LISA Pathfinder | |
| Guillemant et al. | A Study of Solar Orbiter Spacecraft–Plasma Interactions Effects on Electric Field and Particle Measurements | |
| Matéo-Vélez et al. | Assessment of Space Environment Effects on ESD Cubesat through new Spacesuite Code | |
| Haines et al. | Measuring planetary neutron albedo fluxes by remote gamma-ray sensing |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |