CN116137297A - GaSe-based solar blind ultraviolet photoelectric detector integrated with asymmetric F-P cavity - Google Patents
GaSe-based solar blind ultraviolet photoelectric detector integrated with asymmetric F-P cavity Download PDFInfo
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Abstract
The invention discloses a GaSe-based solar blind ultraviolet photoelectric detector integrated with an asymmetric F-P cavity, which is characterized in that a GaSe two-dimensional sheet is transferred to the upper part of a metal/dielectric layer asymmetric F-P cavity with resonance wavelength positioned in a solar blind ultraviolet band, and the absorption of GaSe in the solar blind ultraviolet band is enhanced by utilizing cavity resonance, so that the responsivity and the solar blind ultraviolet/visible inhibition ratio of the GaSe-based photoelectric detector are improved, and the solar blind ultraviolet photoelectric detection with high performance is realized. The solar blind ultraviolet photoelectric detection method utilizes the narrow forbidden band semiconductor material to realize solar blind ultraviolet photoelectric detection, has simple preparation process and provides a new thought for solar blind ultraviolet photoelectric detection.
Description
Technical Field
The invention belongs to the technical field of photoelectric detectors, and particularly relates to a solar blind ultraviolet detection and performance improvement method of a narrow-band gap layered two-dimensional semiconductor material.
Background
Solar radiation in the 200-280 nm band is difficult to reach the surface of the earth due to the strong absorption of the advection ozone layer and the earth atmosphere, so the solar blind ultraviolet detection has higher detection precision and lower false alarm rate compared with the visible and near infrared photoelectric detection. The method has the remarkable advantage that the solar blind ultraviolet detection has remarkable application prospect in the fields of military (such as missile tracking and secret communication) and civil (such as biological detection and ozone layer monitoring) and the like. Early commercial uv photodetectors were primarily photomultiplier tubes (PMTs) and silicon-based detectors (e.g., avalanche diodes). Photomultiplier tubes have a large volume and weight, and typically require operating voltages above 100V, high power consumption and use inconvenience are limitations of such devices. The silicon-based detector has sensitive response to the spectrum of ultraviolet-near infrared band due to the inherent narrow band gap, and for application to the field of ultraviolet detection, a filter system must be strictly designed to eliminate the influence of visible and near infrared spectrum, which increases the complexity of the preparation process and also obviously reduces the effective area of the system.
With the development and maturation of the third generation of semiconductor technology, wide band gap and ultra wide band gap semiconductors such as SiC, gaN, znMgO, ga 2 O 3 And alloys thereof, etc. are widely studied for their application in the field of ultraviolet detection. The use of wide band gap semiconductor materials avoids the degradation problem of the device under long-term ultraviolet irradiation, does not need cooling to reduce dark current, and has made remarkable progress in the deep ultraviolet detection fields of high responsivity, high rejection ratio and low noise. But wide band gap uv detection has several drawbacks: (1) The process conditions associated with wide bandgap semiconductor devices are relatively severe, and generally require expensive equipment and complex process conditions such as Metal Oxide Chemical Vapor Deposition (MOCVD), molecular Beam Epitaxy (MBE), and plasma chemical vapor deposition (PECVD); (2) The inherent ultra-wide band gap and fermi level pinning effect of the material lead to the difficulty in forming good ohmic contact when in contact with metal; (3) High density surface state and severe defects of wide forbidden band materialsLimiting the response speed of the detector requires lifting by processes such as gate control, trench etching and the like. In addition, to achieve solar blind ultraviolet detection, al x Ga -x1 N and Zn x Mg -x1 The O alloy needs to use a higher Al or Mg component, which causes problems such as lattice distortion, phase change, etc., and a large number of lattice defects are formed in the material, resulting in reduced device performance. Thus, the search for simpler, more efficient solar blind ultraviolet detection is becoming a research hotspot in this area.
Since the absorption coefficient of semiconductor materials generally decreases significantly with increasing wavelength, it is expected to realize solar blind ultraviolet photoelectric detection by using thinner narrow bandgap semiconductor materials to suppress absorption of long wavelength light in the materials. For example, the university of Zhejiang Xu Yang teaches that the problem group reduces Si to below 100 nm, thus realizing Si-based high-performance ultraviolet photoelectric detection for the first time, and the responsivity of the MSM structural device under 365 nm illumination is 0.47 AW -1 The UV/visible rejection ratio is up to 100, comparable to GaN and SiC Schottky junction devices (Aliet al.IEDM 2017, 203）。
Compared with the traditional bulk phase material, the two-dimensional layered semiconductor material with the interlayer combined by weaker Van der Waals force is easier to regulate and control the thickness in a vapor phase growth or stripping mode, and the band gap is increased along with the reduction of the layer number, so that the absorption spectrum is gradually blue-shifted along with the reduction of the thickness, and the solar blind ultraviolet detection is hopeful to be realized. Such as two-dimensional Transition Metal Dichalcogenides (TMDCs) MoS 2 Bulk band gap of 1.2 eV, increasing band gap to about 1.8 eV when reduced in thickness to a monolayer, can extend the near infrared band to the visible band (Daset al.Nano lett. 2013, 13, 100). In the earlier work, the inventor of the present invention found through simulation that, as the light absorption coefficient of GaSe of the layered semiconductor material is significantly reduced with the increase of wavelength, 265 and nm day blind ultraviolet light is absorbed on the surface of the material, the penetration depth is about 42 and nm, and the absorption of 365 and nm incident light in this thickness is only about 16.1%, and the absorption of 450 and nm incident light is only about 8.7%, so that the absorption peak is blue-shifted with the reduction of the thickness of the nanobelt. The experimental results also show that devices based on 52.1 nm GaSe nanoribbons were illuminated with 265. 265 nmExhibits the strongest optical response, responsivity and photoconductive gain at 3V bias voltage of 663A/W and 3103 respectively, with MSM structure Ga 2 O 3 Thin film detector performance was comparable (Liuet al.IEEE Trans. Electron Dev. 2022, 69, 5595；Qinet al.Adv, sci, 2021, 8, 2101106) demonstrated that thinning the narrow bandgap semiconductor material effectively suppresses absorption of long-band incident light, and enables solar blind ultraviolet detection (Wu)et al.Small, 2022, 18, 2200594). But the solar blind UV/visible inhibition ratio (R 265 /R 430 ) Only about 2.3, and high performance solar blind ultraviolet detection cannot be achieved.
Disclosure of Invention
Based on the problems existing in the prior art, the invention provides a GaSe-based solar blind ultraviolet photoelectric detector integrated with an asymmetric Fabry-Perot (F-P) cavity, which is characterized in that a GaSe two-dimensional sheet with the thickness smaller than 8nm is transferred to the upper part of a metal/medium layer asymmetric F-P cavity with the resonance wavelength positioned in a solar blind ultraviolet band, and the absorption of GaSe in the solar blind ultraviolet band is enhanced by using cavity resonance, so that the responsivity and the solar blind ultraviolet/visible inhibition ratio of the GaSe-based photoelectric detector are improved, and the solar blind ultraviolet photoelectric detection is realized.
The invention adopts the following technical scheme to solve the technical problems:
the invention discloses a GaSe-based solar blind ultraviolet photoelectric detector integrated with an asymmetric F-P cavity, which is characterized in that: the photoelectric detector transfers the GaSe two-dimensional sheet to an asymmetric F-P cavity with resonance wavelength located above a solar blind ultraviolet band, enhances resonance absorption of the solar blind ultraviolet band by using cavity resonance, can generate multilevel resonance and regulate and control resonance conditions by changing the thickness of the cavity, and improves the solar blind ultraviolet/visible inhibition ratio of the device under specific resonance conditions, thereby realizing high-performance solar blind ultraviolet photoelectric detection.
Further, the two-dimensional sheet of GaSe is a single crystal structure obtained by mechanical exfoliation or chemical vapor deposition, etc., and has a thickness of less than 8nm and a minimum width of more than 1 μm.
Further, the asymmetric F-P cavity is a double-layer structure composed of a metal reflecting layer and a dielectric layer, wherein the metal is reflectedThe layer is Al with stronger reflectivity in the solar blind ultraviolet band, and the dielectric layer is Al 2 O 3 、SiO 2 Or Si (or) 3 N 4 . The metal reflective layer has a thickness of 60-80 a nm and is deposited by electron beam or thermal evaporation at a rate of 0.1-1 a/s. The dielectric layer is deposited on the metal reflective layer by an Atomic Layer Deposition (ALD) device. The thickness of the dielectric layer is determined by finite element analysis (FEM). When the dielectric layer is made of Al 2 O 3 When the thickness of the dielectric layer is 89-95 nm; when the dielectric layer is SiO 2 When the thickness of the dielectric layer is 110-116 nm; when the dielectric layer is Si 3 N 4 When the dielectric layer is formed, the thickness of the dielectric layer is 71-75 nm.
The preparation method of the GaSe-based solar blind ultraviolet photoelectric detector integrated with the asymmetric F-P cavity comprises the following steps:
A 3M release tape was adhered to the GaSe sheet, a (hand-pulled) thin layer or even a single layer of GaSe two-dimensional sheet was mechanically prepared, then the GaSe two-dimensional sheet was transferred from the tape to the PDMS film, and the other side of the PDMS film with the GaSe two-dimensional sheet was adhered to a slide glass.
Fixing a glass slide on a glass slide clamp of a sample platform for transferring, placing a sample on a heating platform, opening an adsorption pump switch of a two-dimensional transferring platform, fixing the adsorption pump switch, enabling a sample area on the glass slide to be opposite to a target substrate, positioning a two-dimensional GaSe sheet on PDMS by using a microscope system, and slowly lowering the clamp to enable the two-dimensional GaSe sheet to be attached to the substrate.
The temperature of the heating table is set to be 70-80 o C, heating for 5-10 min, slowly lifting the PDMS film from the target substrate, and observing the transfer condition of the GaSe two-dimensional sheet.
And 5, forming electrode pair patterns at two ends of the GaSe two-dimensional sheet through a photoetching technology.
And 6, depositing a metal electrode on the sample by electron beam evaporation or thermal evaporation, removing unexposed photoresist by using acetone, and finally annealing for 400 seconds in an Ar atmosphere at 300 ℃ by using a rapid annealing furnace to finish the preparation of the GaSe-based solar blind ultraviolet photoelectric detector integrated with the asymmetric F-P cavity.
Compared with the prior art, the invention has the beneficial effects that:
1. according to the invention, the GaSe two-dimensional thin sheet with the thickness smaller than 8nm is transferred to the upper part of the metal/dielectric layer asymmetric F-P cavity with the resonance wavelength located in the solar blind ultraviolet band, and the absorption of GaSe in the solar blind ultraviolet band is enhanced by using cavity resonance, so that the performance of the GaSe-based photoelectric detector is improved, multistage resonance can be generated by changing the thickness of the cavity, and meanwhile, the solar blind ultraviolet/visible inhibition ratio of the GaSe photoelectric detector is improved under a specific resonance condition, so that solar blind ultraviolet photoelectric detection is realized. The solar blind ultraviolet photoelectric detection is realized by utilizing the narrow-band-gap semiconductor material, the preparation process is simpler than that of the traditional wide-band-gap material-based device, and a new thought is provided for high-performance solar blind ultraviolet photoelectric detection.
2. The non-layered semiconductor material generally needs to be thinned by a mechanical mask or the like or epitaxially grown by MOCVD, MBE or the like, and has expensive equipment and complex process. The two-dimensional layered semiconductor material GaSe has weaker Van der Waals force between layers, and is easy to regulate and control the thickness by chemical vapor deposition, mechanical stripping and other modes.
3. The two-dimensional layered semiconductor material GaSe has the advantages that due to van der Waals force between layers, dangling bonds do not exist on the surface, the defect density is low, good ohmic contact is easy to form with metal, the response speed of the device is high, and the response speed is improved without processes such as grid control and trench etching.
4. The asymmetric F-P cavity adopted by the invention is prepared by electron beam evaporation and atomic layer deposition technology, has good compatibility with CMOS technology, and is beneficial to the integration of devices and the existing Si technology circuit.
Drawings
FIG. 1 is a schematic diagram of a GaSe-based solar blind ultraviolet photodetector integrated with an asymmetric F-P cavity, wherein: 1 is a substrate, 2 is a metal reflecting layer, 3 is a dielectric layer, 4 is a two-dimensional sheet of GaSe, and 5 is a metal electrode.
FIG. 2 is an absorption spectrum of two-dimensional sheets of different thickness of GaSe on a quartz substrate.
FIG. 3a is the Al/Al composition of example 1 2 O 3 Light absorption of 4.8 nm GaSe two-dimensional sheet under asymmetric F-P cavity structure with wavelength and Al 2 O 3 The contour plot of the dielectric layer thickness variation, FIG. 3b corresponds to the absorption with Al at 265 and nm in FIG. 3a 2 O 3 The thickness of the dielectric layer varies.
FIG. 4 shows three cases of the 4.8 nm two-dimensional sheet of GaSe of example 1 when the absorption at 265 and nm peaks, at which Al 2 O 3 The thickness of the dielectric layers was 19 nm, 92 nm and 165 nm, respectively.
FIG. 5 shows the absorption spectrum of a 4.8 nm GaSe two-dimensional sheet on a quartz substrate and the absorption spectrum of a non-symmetrical F-P cavity structure (4.8 nm GaSe/92 nm Al in example 1 2 O 3 80 nm Al/quartz substrate).
FIG. 6a is a graph showing the electric field distribution in a two-dimensional sheet of GaSe without an integrated F-P cavity under the illumination of 265 and nm in example 1, FIG. 6b is a graph showing the electric field distribution in a two-dimensional sheet of GaSe with an integrated F-P cavity, and FIG. 6c is a graph showing the electric field contrast at a Z-axis of 1 nm.
FIG. 7 shows the absorption of a 4.8 nm GaSe two-dimensional sheet in an integrated F-P cavity structure using different metals as metal reflectors in example 1, wherein the metals are respectively equal thickness Au, al, cu, and Al with medium layers of 92 nm 2 O 3 。
FIG. 8a is a diagram of Al/SiO in example 2 2 Light absorption of a two-dimensional sheet of 4.8 nm GaSe with an asymmetric F-P cavity structure is a function of wavelength and SiO 2 Contour diagram of dielectric layer thickness variation, FIG. 8b corresponds toAbsorption with SiO at 265 and nm in FIG. 8a 2 The thickness of the dielectric layer varies.
FIG. 9 is three cases where the absorption of the 4.8 nm two-dimensional sheet of GaSe in example 2 reaches the maximum at 265 and nm wavelengths, at which time SiO 2 The thickness of the dielectric layers was 26 nm, 113 nm and 200 nm, respectively.
FIG. 10 shows the absorption spectrum of a 4.8 nm two-dimensional sheet of GaSe on a quartz substrate and the absorption spectrum of a non-symmetrical F-P cavity structure (4.8 nm GaSe/113 nm SiO in example 2 2 80 nm Al/quartz substrate).
FIG. 11a is a graph showing the electric field distribution in a two-dimensional sheet of GaSe without an integrated F-P cavity under the illumination of 265 and nm in example 2, FIG. 11b is a graph showing the electric field distribution in a two-dimensional sheet of GaSe with an integrated F-P cavity, and FIG. 11c is a comparison of electric fields at a Z-axis of 1 nm.
FIG. 12a is a diagram of Al/Si in example 3 3 N 4 Light absorption of 4.8 nm GaSe two-dimensional flakes with asymmetric F-P cavity structure with wavelength and Si 3 N 4 The contour plot of the dielectric layer thickness variation, FIG. 12b corresponds to the absorption at 265 and nm as Si in FIG. 12a 3 N 4 The thickness of the dielectric layer varies.
FIG. 13 shows three cases when the absorption of 4.8 nm GaSe nanoplatelets reaches a maximum at 265. 265 nm wavelength in example 3, si 3 N 4 The thickness of the dielectric layers was 14 a nm a 73 a nm a 132 a nm a, respectively.
FIG. 14 shows the absorption spectrum of a 4.8 nm two-dimensional sheet of GaSe on a quartz substrate and the absorption spectrum of a two-dimensional sheet of GaSe on an asymmetric F-P cavity structure (4.8 nm GaSe/73 nm Si in example 3 3 N 4 80 nm Al/quartz substrate).
FIG. 15a is a graph showing the electric field distribution in a two-dimensional sheet of GaSe without an integrated F-P cavity under the illumination of 265 and nm in example 3, FIG. 15b is a graph showing the electric field distribution in a two-dimensional sheet of GaSe with an integrated F-P cavity, and FIG. 15c is a comparison of electric fields at a Z-axis of 1 nm.
Detailed Description
The following describes in detail the examples of the present invention, which are implemented on the premise of the technical solution of the present invention, and detailed embodiments and specific operation procedures are given, but the scope of protection of the present invention is not limited to the following examples.
In the examples below, the solar blind UV/Vis ratio inhibition ratio refers to the ratio of the absorbance of GaSe to 265 nm light to the absorbance of 400 nm light.
Example 1
Referring to fig. 1, the GaSe-based solar blind ultraviolet photodetector integrated with an asymmetric F-P cavity in this embodiment uses a quartz substrate as a substrate 1, and a metal reflective layer 2 and a dielectric layer 3 are sequentially disposed on the substrate 1, and a double-layer structure composed of the metal reflective layer and the dielectric layer forms the asymmetric F-P cavity. A two-dimensional sheet 4 of GaSe is transferred onto the dielectric layer 3, and a metal electrode 5 in ohmic contact with GaSe is provided above the two-dimensional sheet 4 of GaSe.
The solar blind ultraviolet photoelectric detector of the embodiment is prepared by the following steps:
and step 1, ultrasonically cleaning a substrate sequentially through acetone, ethanol and deionized water for 10min and drying.
And 2, depositing Al with the thickness of 80 nm on the surface of the substrate treated in the step 1 by electron beam evaporation to serve as a metal reflecting layer of the asymmetric F-P cavity.
A 3M release tape was adhered to the GaSe sheet, a (hand-pulled) thin layer or even a single layer of GaSe two-dimensional sheet was mechanically prepared, then the GaSe two-dimensional sheet was transferred from the tape to the PDMS film (0.5 cm ×0.5 cm), and the other side of the PDMS film with the GaSe two-dimensional sheet was adhered to a glass slide.
Fixing a glass slide on a glass slide clamp of a sample platform for transferring, placing a sample on a heating platform, opening an adsorption pump switch of a two-dimensional transferring platform, fixing the adsorption pump switch, enabling a sample area on the glass slide to be opposite to a target substrate, positioning the GaSe on the PDMS by using a microscopic system, and slowly lowering the clamp to enable the two-dimensional GaSe sheet to be attached to the substrate.
The temperature of the heating table is set to 80 ℃, the temperature is heated for 5 min, and the PDMS film is slowly lifted from the target substrate, and meanwhile, the transfer condition of GaSe is observed.
And 5, forming electrode pair patterns with a distance of 200 nm on two ends of the GaSe two-dimensional sheet by an electron beam exposure lithography technology.
And 6, depositing a gold electrode with the thickness of 50 nm on the sample by electron beam evaporation, removing the unexposed photoresist by using acetone, and finally annealing for 400 seconds in an Ar atmosphere at 300 ℃ by using a rapid annealing furnace to finish the preparation of the GaSe-based solar blind ultraviolet photoelectric detector integrated with the asymmetric F-P cavity.
Fig. 2 is an absorption spectrum of a two-dimensional sheet of GaSe on a quartz substrate, and the results show that: as the thickness of the GaSe two-dimensional sheet is reduced, the absorption peak blue shifts. When the thickness is within 8nm, the absorption peak of GaSe is 265 nm. When the thickness is 4.8 and nm, the solar blind ultraviolet/visible inhibition ratio is only 3.5, and the solar blind ultraviolet detection performance is weaker.
FIG. 3a is the Al/Al composition of example 1 2 O 3 Light absorption of 4.8 nm GaSe two-dimensional sheet under asymmetric F-P cavity structure with wavelength and Al 2 O 3 The contour plot of the dielectric layer thickness variation, FIG. 3b corresponds to the absorption with Al at 265 and nm in FIG. 3a 2 O 3 The thickness of the dielectric layer varies. Indicating multi-level resonance enhancement at dielectric layer thicknesses of 19 nm, 92 nm and 165 nm, respectively.
FIG. 4 is a two-dimensional sheet of 4.8 nm GaSe integrated in an asymmetric F-P cavity (4.8 nm GaSe/Al) in example 1 2 O 3 80 nm Al), it can be seen that when Al 2 O 3 Is 19 nm, 92 nm and 165 nm, respectively, and when Al 2 O 3 The device has a higher solar blind uv/vis rejection ratio at a thickness of 92 nm.
FIG. 5 shows the absorption spectrum of a 4.8 nm two-dimensional sheet of GaSe on a quartz substrate and integrated in an asymmetric F-P cavity (4.8 nm GaSe/92 nm Al in example 1 2 O 3 80 nm Al), the result shows that: 4.8 nm GaSe/92 nm Al 2 O 3 In the asymmetric F-P cavity structure of Al of 80 nm, gaSe is irradiated under 265 and 265 nmThe absorption is 2.83 times that of the quartz substrate, the solar blind ultraviolet/visible ratio is increased to 97.4 times that of the original solar blind ultraviolet detection performance is obviously increased.
FIG. 6a is a graph showing the electric field distribution in a two-dimensional sheet of GaSe without an integrated F-P cavity under the illumination of 265 and nm in example 1, and FIG. 6b is a graph showing the electric field distribution in a two-dimensional sheet of GaSe with an integrated F-P cavity. To more intuitively observe the enhancement of the F-P cavity, FIG. 6c expands the electric field in two dimensions at a Z axis of 1 nm. The results show an integration of Al/Al 2 O 3 After the asymmetric F-P cavity, the electric field intensity in the GaSe two-dimensional sheet is obviously enhanced, and the light absorption is correspondingly enhanced.
FIG. 7 shows the absorption of 4.8 nm GaSe in an integrated F-P cavity structure using different metals as metal reflectors in example 1, wherein the metals are Au, al, cu, and the dielectric layers are 92 nm Al 2 O 3 . The results show that the use of aluminum as a metal mirror works better than other materials, which is related to the higher reflectivity of Al in the solar blind uv band.
Example 2
The device structure and fabrication steps of this example are the same as those of example 1, except that SiO is deposited in step 3 2 As a dielectric layer.
FIG. 8a is a diagram of Al/SiO in example 2 2 Light absorption of a two-dimensional sheet of 4.8 nm GaSe with an asymmetric F-P cavity structure is a function of wavelength and SiO 2 The contour plot of the dielectric layer thickness variation, FIG. 8b corresponds to the absorption vs. SiO at 265, nm in FIG. 8a 2 The thickness of the dielectric layer varies. Indicating multi-level resonance enhancement at dielectric layer thicknesses of 26 nm, 113 nm and 200 nm, respectively.
FIG. 9 shows the integration of a two-dimensional sheet of 4.8 nm GaSe in an asymmetric F-P cavity structure (4.8 nm GaSe/SiO) in example 2 2 80 nm Al), the absorption spectrum of the two-dimensional sheet of GaSe can be seen: when SiO 2 Is 26 nm, 113 nm and 200 nm, respectively, and when SiO 2 The device has a higher solar blind uv/vis rejection ratio at a thickness of 113 a nm a.
FIG. 10 shows the absorption spectrum and integration of a 4.8 nm two-dimensional sheet of GaSe on a quartz substrate in example 2In an asymmetric F-P cavity (4.8 nm GaSe/92 nm SiO) 2 Absorption spectra of GaSe two-dimensional sheet in 80 nm Al), the result shows that 4.8 nm GaSe/113 nm SiO 2 In the asymmetric F-P cavity structure of Al of/80 nm, the absorption of GaSe under 265 and nm illumination is 2.88 times that of GaSe on a quartz substrate, the solar blind ultraviolet/visible ratio is increased to 162 times that of the original solar blind ultraviolet detection performance is obviously improved.
FIG. 11a is a graph showing the electric field distribution in a two-dimensional sheet of GaSe without an integrated F-P cavity under the illumination of 265 and nm in example 2, and FIG. 11b is a graph showing the electric field distribution in a two-dimensional sheet of GaSe with an integrated F-P cavity. To more intuitively observe the enhancement of the F-P cavity, FIG. 11c expands the electric field in two dimensions at a Z axis of 1 nm. The results show an integration of Al/SiO 2 After the asymmetric F-P cavity, the electric field intensity in the GaSe two-dimensional sheet is obviously enhanced, and the light absorption is correspondingly enhanced.
Example 3
The device structure and fabrication steps of this example are the same as those of example 1, except that Si is deposited in step 3 3 N 4 As a dielectric layer.
FIG. 12a is a diagram of Al/Si in example 3 3 N 4 Light absorption of 4.8 nm GaSe two-dimensional flakes with asymmetric F-P cavity structure with wavelength and Si 3 N 4 The contour plot of the dielectric layer thickness variation, FIG. 12b corresponds to the absorption at 265 and nm as Si in FIG. 12a 3 N 4 The thickness of the dielectric layer varies. Indicating multi-level resonance enhancement at dielectric layer thicknesses of 14 nm, 73 nm and 132 nm, respectively.
FIG. 13 shows the integration of a two-dimensional sheet of 4.8 nm GaSe in an asymmetric F-P cavity structure (4.8 nm GaSe/Si in example 3 3 N 4 80 nm Al), the absorption spectrum of the two-dimensional sheet of GaSe can be seen: when Si is 3 N 4 Is a multi-level resonance enhancement phenomenon at thicknesses of 14 nm, 73 nm and 132 nm, respectively, and when Si 3 N 4 The device had a higher solar blind uv/vis rejection ratio at a thickness of 73 a nm a.
FIG. 14 shows the absorption spectrum of a 4.8 nm two-dimensional sheet of GaSe on a quartz substrate and integrated in an asymmetric F-P cavity (4.8 nm GaSe/73 nm Si in example 3 3 N 4 GaSe two-dimensional in 80 nm Al)Absorption spectra of the flakes, the results show that: 4.8 nm GaSe/73 nm Si 3 N 4 In the asymmetric F-P cavity structure of Al of/80 nm, the absorption of GaSe under 265 and nm illumination is 2.79 times that of GaSe on a quartz substrate, the solar blind ultraviolet/visible ratio is increased to 20.4 times that of the original solar blind ultraviolet detection performance is obviously improved.
FIG. 15a is a graph showing the electric field distribution in a two-dimensional sheet of GaSe without an integrated F-P cavity under the illumination of 265 and nm in example 3, and FIG. 15b is a graph showing the electric field distribution in a two-dimensional sheet of GaSe with an integrated F-P cavity. To more intuitively observe the enhancement of the F-P cavity, FIG. 15c is a two-dimensional expansion of the electric field at a Z axis of 1 nm. The results show that Al/Si is integrated 3 N 4 After the asymmetric F-P cavity, the electric field intensity in the GaSe two-dimensional sheet is obviously enhanced, and the light absorption is correspondingly enhanced.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.
Claims (7)
1. The GaSe-based solar blind ultraviolet photoelectric detector integrated with the asymmetric F-P cavity is characterized in that: the photoelectric detector transfers the GaSe two-dimensional sheet to the position above an asymmetric F-P cavity with resonance wavelength located in a solar blind ultraviolet band, enhances resonance absorption of the solar blind ultraviolet band by using cavity resonance, and improves the solar blind ultraviolet/visible inhibition ratio by changing the thickness of the cavity to regulate and control resonance conditions, thereby realizing solar blind ultraviolet photoelectric detection.
2. The GaSe-based solar blind ultraviolet photodetector integrated with an asymmetric F-P cavity of claim 1, wherein: the thickness of the GaSe two-dimensional sheet is smaller than 8nm, and the minimum width is larger than 1 mu m.
3. The GaSe-based solar blind ultraviolet photodetector integrated with an asymmetric F-P cavity of claim 1, wherein: the asymmetric F-P cavity is a double-layer structure composed of a metal reflecting layer and a dielectric layer, wherein the metal reflecting layer is made of Al, and the dielectric layer is made of Al 2 O 3 、SiO 2 Or Si (or) 3 N 4 。
4. A GaSe-based solar blind ultraviolet photodetector integrated with an asymmetric F-P cavity as defined in claim 3, wherein: the thickness of the metal reflecting layer is 60-80 nm.
5. A GaSe-based solar blind ultraviolet photodetector integrated with an asymmetric F-P cavity as defined in claim 3, wherein: the dielectric layer is deposited on the metal reflecting layer through an atomic layer deposition device.
6. A GaSe-based solar blind ultraviolet photodetector integrated with an asymmetric F-P cavity as defined in claim 3, wherein: when the dielectric layer is made of Al 2 O 3 When the thickness of the dielectric layer is 89-95 nm; when the dielectric layer is SiO 2 When the thickness of the dielectric layer is 110-116 nm; when the dielectric layer is Si 3 N 4 When the dielectric layer is formed, the thickness of the dielectric layer is 71-75 nm.
7. The GaSe-based solar blind ultraviolet photodetector integrated with an asymmetric F-P cavity of claim 1, wherein: and a metal electrode in ohmic contact with the GaSe is arranged above the two-dimensional GaSe sheet.
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