CN109873047A - A kind of novel heterojunction photon type infrared detector and preparation method and application - Google Patents
A kind of novel heterojunction photon type infrared detector and preparation method and application Download PDFInfo
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- CN109873047A CN109873047A CN201910108018.6A CN201910108018A CN109873047A CN 109873047 A CN109873047 A CN 109873047A CN 201910108018 A CN201910108018 A CN 201910108018A CN 109873047 A CN109873047 A CN 109873047A
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Abstract
The invention discloses a kind of novel hetero-junctions photon type infrared detectors and preparation method and application, detector includes two electrode layers that basal layer, hetero junction layer and top layer from top to bottom is located at two sides, and hetero junction layer is PbTe (SnTe)/CdTe, PbTe (SnTe)/ZnTe being made of IV-VI/II-VI compound semiconductor or PbSe (SnSe)/CdSe, PbSe (SnSe)/ZnSe heterojunction material development.The present invention is prepared for a kind of FET structure photon type infrared detector based on the heterojunction boundaries two-dimensional electron gas structural material such as PbTe/CdTe.The photoresponse of detector derives from the intrinsic response of PbTe, i.e. spectral response wave band is 1.2-4.0 μm.The response time of the characteristics of having benefited from two-dimensional electron gas high mobility, detector is short, less than 1 μ s.The detectivity of detector is high, has reached 3 × 10 at 2 μm10Jones is much higher than thermal detector and PbTe, PbSe monocrystal thin films infrared detector.The detector has application prospect in infrared focal plane array image-forming field.
Description
Technical field
The invention patent relates to a kind of novel hetero-junctions photon type infrared detectors and preparation method and application.
Background technique
In recent years, as the fields such as civilian, military and aerospace are to infrared detection technique application gradually deepening, to it
The requirement of device performance is also higher and higher.Infrared detector is that the infrared radiation signal of incident specific wavelength is transformed into telecommunications
Number to realize the device of detection purpose, the working mechanism of photoelectric detector is based primarily upon suction of the semiconductor to infra-red radiation
Receipts and adjoint various photoelectric effect, such as photoconductive effect and photovoltaic effect.For undoped semiconductor, there is sound
Energy corresponding to the electromagnetic wave answered should be not less than the semiconductor band gap, based on this semiconductor preparation infrared detector
Make infrared intrinsic detector.The detecting band of this detector depends on its band gap size.
We once invented a kind of PbTe/CdTe heterojunction boundary two-dimensional electron gas structure (patent No.: CN 103413827
A), which has higher face electron concentration (~1 × 10 near interface13cm-2) and higher mobility (~900cm2/ Vs,
Room temperature).These excellent material properties are undoubtedly what infrared detection technique was pursued, they to promoted infrared detector detection
Rate and response time etc. have great importance.For the infrared detector of working and room temperature, the biggest problem for needing to solve
It is exactly noise reduction problem.In general, room temperature when due to narrow gap semiconductor thermal excitation generate noise can be bigger, lead to device
Part performance is bad, is unable to satisfy requirement.But PbTe and PbSe sill, with one compared with iii-v or HgTe material
Big advantage, i.e. low 1~2 order of magnitude of auger recombination coefficient at room temperature, to have noise lower and the higher characteristic of detectivity.
Further, since the interface carrier mobility of the hetero-junctions is higher, so the response time of detector is also very short.
Summary of the invention
The present invention is based on PbTe/CdTe heterojunction boundary two-dimensional electron gas structure (patent No.: 103413827 A of CN)
By designing and preparing panel detector structure, a kind of detector that can detect infrared photon is provided.The manufacture craft letter of the detector
It is single, photoelectric properties preferably (detectivity height and fast response time).The specific technical solution of the present invention is as follows:
The invention discloses a kind of novel hetero-junctions photon type infrared detector, the detector includes from top to bottom
Basal layer, hetero junction layer and top layer be located at two electrode layers of two sides.
As a further improvement, hetero junction layer of the present invention is by IV-VI/II-VI compound semiconductor structure
At PbTe (SnTe)/CdTe, PbTe (SnTe)/ZnTe or PbSe (SnSe)/CdSe, PbSe (SnSe)/ZnSe hetero-junctions material
What material was developed.
As a further improvement, PbTe of the present invention or SnTe or PbSe thickness are greater than 3 microns, CdTe or ZnTe
Or CdSe or ZnSe film thickness is less than 1 micron.
As a further improvement, on hetero junction layer of the present invention, part in addition to electrode layer is uptake zone.
The invention also discloses a kind of preparation method of novel infrared hetero-junctions photon type detector of room temperature, preparation steps
It is rapid as follows:
1) molecular beam epitaxy or Metallo-Organic Chemical Vapor deposition growing PbTe (SnTe)/CdTe, PbTe (SnTe)/ZnTe
Or PbSe (SnSe)/CdSe, PbSe (SnSe)/ZnSe hetero-junctions, form hetero structure layers；
2) photoetching electrode district；
3) electrode is prepared, deposits the gold of 100~200nm on the sample of photoetching with the method for magnetic control or electron beam evaporation
Belong to film, and remove therewith, then sample is put in vacuum environment and is annealed 5 minutes under the conditions of 100 DEG C, forms electrode layer.
The invention also discloses a kind of application method of novel hetero-junctions photon type detector, the device can be expanded
For focal plane arrays (FPA), it is applied to infrared imaging.
Beneficial effects of the present invention are as follows:
The present invention is prepared for a kind of FET knot based on the heterojunction boundaries two-dimensional electron gas structural material such as PbTe/CdTe
Structure photon type infrared detector.The photoresponse of detector derives from the intrinsic response of PbTe, i.e. spectral response wave band is 1.2-4.0
μm.The response time of the characteristics of having benefited from two-dimensional electron gas high mobility, detector is short, less than 1 μ s.The detectivity of detector
Height has reached 3 × 10 at 2 μm10Jones is much higher than thermal detector and PbTe, PbSe monocrystal thin films infrared detector.The spy
Surveying device has application prospect in infrared focal plane array image-forming field.
Detailed description of the invention
Fig. 1 be the PbTe/CdTe heterojuction infrared detector prepared plan view (on) and sectional view (under), wherein two dimension
Electron gas is located at the interface CdTe/PbTe；
Fig. 2 is the photocurrent response spectrum of detector at room temperature；
Fig. 3 is time-resolved photocurrent response figure of the detector under the 100kHz pulsed laser irradiation of different wave length；
Fig. 4 is the enlarged drawing to 2.0 μm of photocurrent responses in Fig. 3.
Specific embodiment
The invention discloses one kind with PbTe (SnTe)/CdTe, PbTe (SnTe)/ZnTe or PbSe (SnSe)/CdSe,
Photon type infrared detector based on the heterojunction boundaries two-dimensional electron gas structural material such as PbSe (SnSe)/ZnSe, photoresponse
From transition of the electronics between the narrow gap semiconductors band gap such as PbTe, as the improvement of detector performance, with traditional PbTe
Or PbSe thin film infrared detector compares, and has benefited from the heterojunction boundaries two-dimensional electron gas structure such as PbTe/CdTe median surface
The response time of the high mobility of carrier, device of the present invention is very short, by integrating several devices of the present invention
Two-dimensional array is formed to compared with small area region (such as 1cm × 1cm), and the electrode of each device is introduced into addressing circuit,
Allow to the work of any one of unrestricted choice device, thus can realize that focal plane arrays (FPA) detects, so that it is red to be applied to room temperature
Outer imaging.
Technical solution of the present invention is further described below by specific embodiment:
Fig. 1 be the PbTe/CdTe heterojuction infrared detector prepared plan view (on) and sectional view (under), wherein two dimension
Electron gas is located at the interface CdTe/PbTe；Detector includes that basal layer, hetero junction layer and top layer from top to bottom is located at two sides
Electrode layer；Hetero junction layer be made of IV-VI/II-VI compound semiconductor PbTe (SnTe)/CdTe, PbTe (SnTe)/
ZnTe or PbSe (SnSe)/CdSe, PbSe (SnSe)/ZnSe heterojunction material development；PbTe or SnTe or PbSe thickness are big
In 3 microns, CdTe or ZnTe or CdSe or ZnSe film thickness are less than 1 micron；Portion on hetero junction layer, except two electrode layers
Dividing is uptake zone.
Detailed process is as follows:
(a) hetero-junctions is grown.
PbTe and the 500nm thickness that successively one layer of 3 μ m-thick of growth is grown in substrate are grown in molecular beam epitaxy (MBE) method
CdTe thin film, form PbTe/CdTe heterojunction structure, two-dimensional electron gas is in (under such as Fig. 1 shown in) between the two.
(b) photoetching electrode district.
It arranges dark room conditions, takes out AZ4620 photoresist from refrigerator, spin coating is carried out to sample in draught cupboard, first 500
Even 10 seconds under the conditions of rev/min, then even 40 seconds under the conditions of 4000 revs/min, about 3 μm of photoresist thickness.After spin coating, by sample
It is placed on 100 DEG C of hot plates front baking 4 minutes, while photoresist is put back into refrigerator, clean sol evenning machine with acetone.Connect litho machine and mercury
Lamp power supply is preheated, and photolithography plate is installed on litho machine.Etching condition is the time for exposure 85 seconds, and exposure intensity is by photoetching
Machine determines.After photoetching, sample is dipped in developer solution 80 seconds, stirs developer solution ceaselessly during which to develop uniformly.Take out sample
And remaining developer solution is rinsed out with deionized water, it is dried up with nitrogen gun, is dried 10 minutes after being placed on 100 DEG C of hot plates.At this point,
Mercury lamp power supply is disconnected, photoetching electromechanical source disconnects after twenty minutes.
(c) electrode is prepared.
The chromium of 10nm and the copper of 200nm are grown on the sample of photoetching with magnetically controlled sputter method, then impregnate sample
In acetone.Sample is further taken out after placing 2 hours at room temperature, to guarantee that photoresist is completely dissolved.This process namely removing, make electricity
Metal other than polar region domain falls off, and only retains the metal of electrode zone as electrode.Then, sample is put in vacuum environment
It anneals 5 minutes under the conditions of 100 DEG C, so that metallic copper diffuses through CdTe layer, (middle arrow under such as Fig. 1 is contacted with two-dimensional electron gas
Shown process).
So far, heterojuction infrared detector is just prepared and is completed.
Above embodiment is only a kind of implementation, and it is different that all steps can substitute listed by the present invention other on an equal basis
Matter knot material.
Test and result
Detector is as shown in Figure 2 in the photocurrent response spectrum of room temperature, and Fig. 2 is the photocurrent response of detector at room temperature
Spectrum, as seen from the figure, the response wave band of device are 1.2-4 μm, and meeting the intrinsic response of PbTe, (band gap when PbTe room temperature is
0.32eV, corresponding cutoff wavelength are 3.8 μm, and the result obtained with experiment is almost the same).Absorption in spectrum near 2.7 μm
Absorption of carbon dioxide of the peak in air to infrared photon.Fig. 3 is that detector swashs in the 100kHz pulse of different wave length
Time-resolved photocurrent response figure under light irradiation, it in wavelength is respectively 1.5,2.0,2.4,3.0 that Fig. 3 was provided, which is detector,
With the time-resolved photocurrent response figure under 3.5 μm of 100kHz narrow-pulse laser irradiation.Fig. 4 is to 2.0 μm of photoelectricity in Fig. 3
The enlarged drawing of response is flowed, Fig. 4 is the enlarged drawing to the photocurrent response of pulse laser, and the response time for having obtained device is less than
1.0 μ s, response speed is quickly.In addition, using standard detector with development of new device in same intensity, phase co-wavelength (2.0 μ
M) under infrared-ray irradiation, it compared the signal-to-noise ratio (S/N) of the two, then according to formula:
Our devices have been obtained at room temperature 2 μm of detectivity >=3.0 × 1010Jones。
What has been described above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill of the art
For personnel, under the premise of not departing from core technical features of the present invention, several improvements and modifications can also be made, these improvement
It also should be regarded as protection scope of the present invention with retouching.
Claims (6)
1. a kind of novel hetero-junctions photon type infrared detector, which is characterized in that the detector includes from top to bottom
Basal layer, hetero junction layer and top layer are located at two electrode layers of two sides.
2. novel hetero-junctions photon type infrared detector according to claim 1, which is characterized in that the hetero-junctions
Layer is PbTe (SnTe)/CdTe, PbTe (SnTe)/ZnTe or PbSe being made of IV-VI/II-VI compound semiconductor
(SnSe)/CdSe, PbSe (SnSe)/ZnSe heterojunction material development.
3. novel hetero-junctions photon type infrared detector according to claim 2, which is characterized in that the PbTe or
SnTe or PbSe thickness is greater than 3 microns, and CdTe or ZnTe or CdSe or ZnSe film thickness are less than 1 micron.
4. novel hetero-junctions photon type infrared detector according to claim 1 or 2 or 3, which is characterized in that described
On hetero junction layer, part in addition to electrode layer is uptake zone.
5. a kind of preparation method of the infrared hetero-junctions photon type detector of novel room temperature as described in claims 1 or 2 or 3,
It is characterized in that, its preparation step is as follows:
1) molecular beam epitaxy or Metallo-Organic Chemical Vapor deposition growing PbTe (SnTe)/CdTe, PbTe (SnTe)/ZnTe or
PbSe (SnSe)/CdSe, PbSe (SnSe)/ZnSe hetero-junctions forms hetero structure layers；
2) photoetching electrode district；
3) electrode is prepared, deposits the metal foil of 100~200nm on the sample of photoetching with the method for magnetic control or electron beam evaporation
Film, and remove therewith, then sample is put in vacuum environment and is annealed 5 minutes under the conditions of 100 DEG C, electrode layer is formed.
6. a kind of application method of the novel hetero-junctions photon type detector as described in claims 1 or 2 or 3, feature exist
In the device is applied to infrared imaging widenable to focal plane arrays (FPA).
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113013283A (en) * | 2019-12-20 | 2021-06-22 | 中国电子科技集团公司第四十八研究所 | PbSe photosensitive film infrared photoelectric detection chip, preparation method thereof and infrared photoelectric detector |
| CN114597271A (en) * | 2022-01-25 | 2022-06-07 | 国科大杭州高等研究院 | Novel photoelectric position sensitive detector based on heterojunction two-dimensional electron gas and preparation method thereof |
| CN115000208A (en) * | 2022-04-26 | 2022-09-02 | 昆明物理研究所 | Tin telluride film/germanium heterojunction wide-spectrum photoelectric detector and preparation method thereof |
| CN115058766A (en) * | 2022-06-08 | 2022-09-16 | 中国科学院重庆绿色智能技术研究院 | Lead telluride nanowire film and preparation method and application thereof |
| CN116328797A (en) * | 2023-04-07 | 2023-06-27 | 重庆邮电大学 | Heterojunction material with high solar hydrogen production rate and application thereof |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113013283A (en) * | 2019-12-20 | 2021-06-22 | 中国电子科技集团公司第四十八研究所 | PbSe photosensitive film infrared photoelectric detection chip, preparation method thereof and infrared photoelectric detector |
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| CN115000208A (en) * | 2022-04-26 | 2022-09-02 | 昆明物理研究所 | Tin telluride film/germanium heterojunction wide-spectrum photoelectric detector and preparation method thereof |
| CN115000208B (en) * | 2022-04-26 | 2023-10-20 | 昆明物理研究所 | Tin telluride film/germanium heterojunction broad spectrum photoelectric detector and preparation method thereof |
| CN115058766A (en) * | 2022-06-08 | 2022-09-16 | 中国科学院重庆绿色智能技术研究院 | Lead telluride nanowire film and preparation method and application thereof |
| CN116328797A (en) * | 2023-04-07 | 2023-06-27 | 重庆邮电大学 | Heterojunction material with high solar hydrogen production rate and application thereof |
| CN116328797B (en) * | 2023-04-07 | 2024-05-24 | 重庆邮电大学 | Heterojunction material with high solar hydrogen production rate and application thereof |
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Application publication date: 20190611 |