CN110416333A - A kind of UV photodetector and preparation method thereof - Google Patents
A kind of UV photodetector and preparation method thereof Download PDFInfo
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- CN110416333A CN110416333A CN201910625116.7A CN201910625116A CN110416333A CN 110416333 A CN110416333 A CN 110416333A CN 201910625116 A CN201910625116 A CN 201910625116A CN 110416333 A CN110416333 A CN 110416333A
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- 238000000825 ultraviolet detection Methods 0.000 claims abstract description 94
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 49
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 49
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Abstract
The invention belongs to minute manufacturing correlative technology fields, it discloses a kind of UV photodetector and preparation method thereof, the preparation method is the following steps are included: (1) prepares electrode layer in the silicon base with silicon nitride dielectric layer using photoetching alignment process and evaporation coating technique；(2) ultraviolet detection film is prepared on electrode layer, the ultraviolet detection film is Mn doping CsPbBr3xCl3(1‑x)Ultraviolet detection film is by the way that PbCl is successively deposited on the electrode layer2Layer, CsBr layers, CsCl layers and MnCl2Layer and formed；Wherein, x is 0.05~0.1；(3) packaging protection layer is prepared on the ultraviolet detection film using drop coating mode, the ultraviolet detection film is packaged, the UV photodetector is thus obtained.Cost of the invention is lower and is more easy to get, and preparation process is simpler, and the absorption coefficient of light is higher, and carrier transport is more rapidly, with strong applicability.
Description
Technical field
The invention belongs to minute manufacturing correlative technology fields, more particularly, to a kind of UV photodetector and its system
Preparation Method.
Background technique
Photodetector is the important component of electro-optical system, has in national defense safety and daily life and answers extensively
With.In recent years, ultraviolet band Detection Techniques (10nm~40nm) become except laser acquisition, infrared acquisition another extremely
Important detecting technique.Cosmic space, flame, gaseous contamination molecule and power transmission line corona etc. can generate ultraviolet light spoke
It penetrates, ultraviolet detection technology applies valence with important with fields such as civilian detections in space technology, space early warning, communication, biology
Value and wide application prospect.
Traditional UV photodetector is broadly divided into two major classes: photoemission ultraviolet detector and semiconductor ultraviolet detection
Device, the working principle that the former is are external photoeffects, and the latter then mainly utilizes photoconductive effect or photovoltaic effect.Tradition
Photoemission ultraviolet detector, such as be based on tellurium caesium (Cs2Te) and tellurium rubidium (Rb2Te) photocathode photoemission ultraviolet detection
Device technically comparative maturity, but have that detectivity is low, and photoelectric conversion efficiency is low in practical applications, it can not achieve
Real day is blind and the disadvantages such as comparision of production is difficult.With the maturation of semiconductor material and large scale integrated circuit technology, GaN
The wide bandgap semiconductors ultraviolet detectors such as base, SiC base, zno-based are quickly grown in recent years, they are small in size, low in energy consumption, at low cost
And forbidden band is easily adjusted and is good at, it is widely used, but such device still has that detectivity is lower, and dark current is big, thick material shortage
(Ga) the defects of and preparation process is complicated.Therefore, new high quality, the ultraviolet photo-conductive film in broad stopband are developed to ultraviolet detector
Development is of great significance.
Perovskite material is high with the absorption coefficient of light, charge mobility is high, dielectric constant is small, internal flaw is few and surface is multiple
The low good characteristic of conjunction rate, and while being illuminated by the light can show quick response characteristics to light (delicate or even nanosecond scale), be high speed,
The ideal structures of highly sensitive photodetector.At present, it has been reported that perovskite photodetector sensitivity, dynamic range with
And response speed etc. has more advantage than the conventional photodetectors based on inorganic semiconductor materials such as Si, InGaAs, GaN,
And it is substantially better than the novel photoelectric sensors such as organic photodetector, quantum dot light electric explorer.In addition, intersecting at other types
Detector, perovskite photodetector also have that dim light responsiveness is good, preparation process is simple, production cost is low, to production equipment
It is required that more low huge advantage, therefore there is very wide application prospect in photodetection neighborhood.To realize the ultraviolet spy of high-precision
Survey while reducing the noise jamming of visible light wave range, ultraviolet detection film need to have a wider band gap, and traditional organic-inorganic
Hydridization perovskite MAPbI3Photonic band gap be only 1.53eV, there is biggish response to the visible light of 400~810nm wave band,
It is and smaller less than the ultraviolet light response of 400nm to wavelength, it is clear that not to be suitable for ultraviolet detection.Full-inorganic CsPbX3(X=Br, Cl)
Perovskite has photonic band gap more broader than organic inorganic hybridization perovskite, higher stability and lower material cost,
Highest forbidden band is 2.85eV, and absorbing wavelength lower limit is lower than 410nm (suitable with the wider SiC material of ultraviolet detection field application),
To visible light wave range almost without response, and there is excellent absorptivity and response speed to ultraviolet band light, therefore be more satisfactory
Ultraviolet detection material.
Full-inorganic broad stopband CsPbX3Perovskite material is that the development of ultraviolet light spy technology brings new opportunity, but tradition
Perovskite nano-crystal film be to be prepared based on solwution method mostly, there are CsPbX3Materials synthesis is difficult, and (such as quantum dot closes
At), preparation CsPbX3Depth of film defect state is poor compared with high (such as vacancy Cl is more) and film forming, and (such as continuity is low, crystal grain ruler
It is very little it is small, grain boundary density is high) the problems such as, these defects can all significantly reduce carrier mobility and speed of photoresponse, and solwution method
Technique itself is unfavorable for large area CsPbX3The deposition of perovskite thin film limits the preparation of large area ultraviolet detector.Accordingly
Ground, there is the technical needs for developing a kind of preferable UV photodetector of quality and preparation method thereof for this field.
Summary of the invention
Aiming at the above defects or improvement requirements of the prior art, the present invention provides a kind of UV photodetector and its systems
A kind of preferable ultraviolet light photo of quality is studied and devised to Preparation Method based on the work characteristics of existing UV photodetector
Detector and preparation method thereof.The preparation method adulterates CsPbBr using multistep evaporation process preparation Mn3xCl3(1-x)Ultraviolet spy
Film is surveyed, by finely tuning the element ratio of Cl and Br, the fine tuning of photonic band gap not only may be implemented, while promoting the biography of carrier
Defeated rate and the defect state density for reducing film itself, film crystallite dimension and pattern are also improved, and photoelectric properties are conducive to
Raising.In addition, Mn doping can further decrease CsPbBr3xCl3(1-x)Nanocrystalline intrinsic defect, improve film conductivity and
Carrier mobility reduces unfavorable non-radiative recombination loss, improves the sensitivity and the speed of response of UV photodetector.
To achieve the above object, according to one aspect of the present invention, a kind of preparation side of UV photodetector is provided
Method, the preparation method the following steps are included:
(1) electrode is prepared in the silicon base with silicon nitride dielectric layer using photoetching alignment process and evaporation coating technique
Layer；
(2) ultraviolet detection film is prepared on the electrode layer, the ultraviolet detection film is Mn doping
CsPbBr3xCl3(1-x)Ultraviolet detection film is by the way that PbCl is successively deposited on the electrode layer2Layer, CsBr layers, CsCl layers
And MnCl2Layer and formed；Wherein, x is 0.05~0.1；
(3) packaging protection layer is prepared on the ultraviolet detection film using drop coating mode, the ultraviolet detection is thin
Film is packaged, and thus obtains the UV photodetector.
Further, the electrode rule arrangement of the electrode layer, and the spacing between electrode is 10 μm~40 μm.
Further, the evaporation rate used in step (2) for
Further, in step (2), the ultraviolet detection film is with 250 DEG C~350 DEG C annealing 15min.
Further, in step (3), the packaging protection layer heats 15min~20min progress at 80 DEG C~100 DEG C
Drying.
Other side according to the invention, provides a kind of UV photodetector, and the UV photodetector is
It is prepared using the preparation method of UV photodetector as described above.
Further, the UV photodetector includes the silicon base for having silicon nitride dielectric layer, is formed in the silicon
Electrode layer, the ultraviolet detection film being formed on the electrode layer in substrate and the envelope being formed on the ultraviolet detection film
Fill protective layer；The ultraviolet detection film includes the PbCl set gradually2Layer, CsBr layers, CsCl layers and MnCl2Layer.
Further, the PbCl2Layer with a thickness of 150nm~200nm；The MnCl2Layer with a thickness of 10nm~
15nm。
Further, the electrode layer with a thickness of 80nm~100nm.
Further, the packaging protection layer is PDMS layer；The forbidden band of the ultraviolet detection film is 2.85eV.
In general, through the invention it is contemplated above technical scheme is compared with the prior art, purple provided by the invention
Outer photodetector and preparation method thereof mainly has the advantages that
1. the ultraviolet detection film is by the way that PbCl is successively deposited on the electrode layer2Layer, CsBr layers, CsCl layers and
MnCl2Layer and formed, i.e. continuous evaporating-plating PbCl2Layer, CsBr layer and CsCl layers prepare CsPbBr3xCl3(1-x)Perovskite nanometer
It is brilliant；By adjusting CsBr layers, CsCl layers and PbCl2The thickness proportion of layer is, it can be achieved that accurate control to thin film composition, uses
The bis- halogen inorganic perovskites of Br, Cl can be effectively improved the level structure of film, reduce the defect state density of film itself；In addition,
Compared to traditional solwution method, the CsPbBr of technique preparation3xCl3(1-x)Film coverage is high, crystallite dimension is big, crystal boundary is few and
Defect is few, light absorpting ability is strong, carrier diffusion is apart from longer, has more preferably optically and electrically performance.
2. the ultraviolet detection film is Mn doping CsPbBr3xCl3(1-x)Ultraviolet detection film, compared to photoemission purple
External detector and semiconductor ultraviolet detection device, perovskite photodetector have cost of material lower and are more easy to get, preparation process
It is simpler, the absorption coefficient of light is higher, carrier transport more rapidly, detectivity is higher and that dark current is smaller etc. is a series of excellent
Gesture is the ideal structures of new ultra-violet photodetector；Meanwhile it is widely applied organic compared in perovskite photodetector
Inorganic hybridization perovskite detecting core material, full-inorganic CsPbBr3xCl3(1-x)Perovskite is nanocrystalline to be had than organic inorganic hybridization
The broader photonic band gap of perovskite, higher stability and lower material cost, highest forbidden band are 2.85eV, absorbing wavelength
Lower limit is lower than 410nm, to visible light wave range almost without response, and has excellent absorptivity and response speed to ultraviolet band light
Degree, greatly reduces interference of the visible light wave range to ultraviolet detection, therefore be comparatively ideal ultraviolet detection material.
3. couple CsPbBr3xCl3(1-x)Nanocrystalline progress Mn doping, can effectively reduce CsPbBr3xCl3(1-x)Nanocrystalline sheet
Defect is levied, the electric conductivity and carrier mobility of film are improved, dark current and unfavorable non-radiative recombination loss is reduced, improves purple
The sensitivity and the speed of response of outer photodetector.
4. it is prepared as encapsulation layer material by drop coating mode using the PDMS of cheap, high stability and high hydrophobicity, it is former
Material is easy to get, simple process, easily operated, is conducive to improve the job stability of ultraviolet detector and reduces production cost, favorably
In the large-scale commercial production of detector.
Detailed description of the invention
Fig. 1 is the flow diagram of the preparation method for the UV photodetector that better embodiment of the present invention provides；
Fig. 2 is the structural schematic diagram of UV photodetector provided by the invention.
In all the appended drawings, identical appended drawing reference is used to denote the same element or structure, in which: 1- has silicon nitride
The silicon base of insulating layer, 2- electrode layer, 3- ultraviolet detection film, 4- packaging protection layer.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in the various embodiments of the present invention described below
Not constituting a conflict with each other can be combined with each other.
Referring to Fig. 1, the preparation method for the UV photodetector that better embodiment of the present invention provides mainly include with
Lower step:
Step 1 provides one and has the silicon base of silicon nitride dielectric layer, and cleans to the silicon base.
Specifically, the silicon base for having silicon nitride dielectric layer is provided, uses detergent, acetone, ethyl alcohol, deionization respectively
Water is cleaned by ultrasonic the silicon base 15~20 minutes；Then, the silicon base is dried up using stream of nitrogen gas, then to the silicon
Substrate carries out UV ozone and handles 15~30 minutes.
Step 2 prepares electrode layer in the silicon base using photoetching alignment process and evaporation coating technique.
Specifically, electrode layer, the electricity are prepared in the silicon base using photoetching alignment process and evaporation coating technique
Pole layer electrode rule arrangement, and between electrode between be divided into 10 μm~40 μm；The electrode layer with a thickness of 80nm~
100nm。
Step 3, prepares ultraviolet detection film on the electrode layer, and the ultraviolet detection film is Mn doping
CsPbBr3xCl3(1-x)Ultraviolet detection film is by the way that PbCl is successively deposited on the electrode layer2Layer, CsBr layers, CsCl layers
And MnCl2Layer and formed.
Specifically, ultraviolet detection film is prepared on the electrode layer, the ultraviolet detection film is Mn doping
CsPbBr3xCl3(1-x)Ultraviolet detection film.The ultraviolet detection film is that PbCl is deposited by multistep2Layer, CsBr layers, CsCl layers
And MnCl2What layer was prepared into, whole preparation process is in pressure less than 1 × 10-3It is carried out in the high-vacuum chamber of Pa.
In present embodiment, firstly, the PbCl of 150nm~200nm thickness is deposited on the electrode layer2Presoma, successively
CsBr layers, CsCl layers and PbCl of vapor deposition2Layer, wherein by changing CsBr layers, CsCl layers and PbCl2The thickness proportion of layer changes
CsPbBr3xCl3(1-x)Nanocrystalline ingredient, wherein x is controlled between 0.05~0.1, and each layer evaporation rate controlsThen, the MnCl of 10nm~15nm thickness is prepared on the CsCl layer by being vaporized on2Layer is with right
CsPbBr3xCl3(1-x)Nano-crystal film carries out Mn doping, and thin film evaporation rate isFinally, with 250 DEG C~
350 DEG C of annealing 15min promote Mn to adulterate CsPbBr3xCl3(1-x)Crystallization.
Step 4 prepares packaging protection layer on the ultraviolet detection film using drop coating mode, by the ultraviolet spy
It surveys film to be packaged, thus obtains the UV photodetector.
Specifically, packaging protection layer is prepared on the ultraviolet detection film in a manner of drop coating, then at 80 DEG C~100 DEG C
Heating 15min~20min is dried.So far, it completes to adulterate CsPbBr based on Mn3xCl3(1-x)The ultraviolet light photo of nano-crystal film
The preparation of detector.In present embodiment, the packaging protection layer is low cost, compactness is good, high stability and high hydrophobicity
PDMS layer.
Referring to Fig. 2, the UV photodetector is using institute as above the present invention also provides UV photodetector
What the preparation method for the UV photodetector stated was prepared.The UV photodetector includes having silicon nitride dielectric layer
Silicon base 1, the electrode layer 2 being formed in the silicon base 1, the ultraviolet detection film 3 that is formed on the electrode layer 2 and shape
At the packaging protection layer 4 on the ultraviolet detection film, the packaging protection layer 4 and the electrode layer 2, the silicon base 1
The ultraviolet detection film 3 is packaged.In present embodiment, the ultraviolet detection film 3 is Mn doping
CsPbBr3xCl3(1-x)Perovskite nano-crystal film, x are 0.05~0.1；The highest forbidden band of the ultraviolet detection film is
2.85eV, absorbing wavelength lower limit is lower than 410nm (suitable with the wider SiC material of ultraviolet detection field application), to visible light wave
Section has excellent absorptivity and response speed to ultraviolet light wave band almost without response, greatly reduces visible light wave range
Interference to ultraviolet detection is more satisfactory ultraviolet detection material.
Embodiment 1
The preparation method for the UV photodetector that first embodiment of the invention provides mainly comprises the steps that
S1 provides one and has the silicon base of silicon nitride dielectric layer, and cleans to the silicon base.
Specifically, the silicon base for having silicon nitride dielectric layer is provided, uses detergent, acetone, ethyl alcohol, deionization respectively
Water is cleaned by ultrasonic the silicon base 15 minutes；Then, the silicon base is dried up using stream of nitrogen gas, then to the silicon base
UV ozone is carried out to handle 15 minutes.
S2 prepares electrode layer in the silicon base using photoetching alignment process and evaporation coating technique.
Specifically, electrode layer, the electricity are prepared in the silicon base using photoetching alignment process and evaporation coating technique
Pole layer electrode rule arrangement, and between electrode between be divided into 10 μm；The electrode layer with a thickness of between 85nm.
S3, prepares ultraviolet detection film on the electrode layer, and the ultraviolet detection film is Mn doping
CsPbBr3xCl3(1-x)Ultraviolet detection film is by the way that PbCl is successively deposited on the electrode layer2Layer, CsBr layers, CsCl layers
And MnCl2Layer and formed.
Specifically, ultraviolet detection film is prepared on the electrode layer, the ultraviolet detection film is Mn doping
CsPbBr3xCl3(1-x)Ultraviolet detection film.The ultraviolet detection film is that PbCl is deposited by multistep2Layer, CsBr layers, CsCl layers
And MnCl2What layer was prepared into, whole preparation process is in pressure less than 1 × 10-3It is carried out in the high-vacuum chamber of Pa.
In present embodiment, firstly, the PbCl of 180nm thickness is deposited on the electrode layer2CsBr is successively deposited in presoma
Layer, CsCl layers and PbCl2Layer, wherein by changing CsBr layers, CsCl layers and PbCl2The thickness proportion of layer changes
CsPbBr3xCl3(1-x)Nanocrystalline ingredient, wherein x is controlled between 0.05~0.1, and each layer evaporation rate controlsThen, the MnCl of 10nm thickness is prepared on the CsCl layer by being vaporized on2Layer is to CsPbBr3xCl3(1-x)
Nano-crystal film carries out Mn doping, and thin film evaporation rate isFinally, promoting Mn doping with 300 DEG C of annealing 15min
CsPbBr3xCl3(1-x)Crystallization.
S4 prepares packaging protection layer on the ultraviolet detection film using drop coating mode, and the ultraviolet detection is thin
Film is packaged, and thus obtains the UV photodetector.
Specifically, packaging protection layer is prepared on the ultraviolet detection film in a manner of drop coating, then is heated at 85 DEG C
18min is dried.So far, it completes to adulterate CsPbBr based on Mn3xCl3(1-x)The system of the UV photodetector of nano-crystal film
It is standby.In present embodiment, the packaging protection layer is low cost, compactness is good, high stability and high hydrophobicity PDMS layer.
Embodiment 2
The preparation method for the UV photodetector that second embodiment of the invention provides mainly comprises the steps that
B1 provides one and has the silicon base of silicon nitride dielectric layer, and cleans to the silicon base.
Specifically, the silicon base for having silicon nitride dielectric layer is provided, uses detergent, acetone, ethyl alcohol, deionization respectively
Water is cleaned by ultrasonic the silicon base 20 minutes；Then, the silicon base is dried up using stream of nitrogen gas, then to the silicon base
UV ozone is carried out to handle 30 minutes.
B2 prepares electrode layer in the silicon base using photoetching alignment process and evaporation coating technique.
Specifically, electrode layer, the electricity are prepared in the silicon base using photoetching alignment process and evaporation coating technique
Pole layer electrode rule arrangement, and between electrode between be divided into 40 μm；The electrode layer with a thickness of between 90nm.
B3, prepares ultraviolet detection film on the electrode layer, and the ultraviolet detection film is Mn doping
CsPbBr3xCl3(1-x)Ultraviolet detection film is by the way that PbCl is successively deposited on the electrode layer2Layer, CsBr layers, CsCl layers
And MnCl2Layer and formed.
Specifically, ultraviolet detection film is prepared on the electrode layer, the ultraviolet detection film is Mn doping
CsPbBr3xCl3(1-x)Ultraviolet detection film.The ultraviolet detection film is that PbCl is deposited by multistep2Layer, CsBr layers, CsCl layers
And MnCl2What layer was prepared into, whole preparation process is in pressure less than 1 × 10-3It is carried out in the high-vacuum chamber of Pa.
In present embodiment, firstly, the PbCl of 160nm thickness is deposited on the electrode layer2CsBr is successively deposited in presoma
Layer, CsCl layers and PbCl2Layer, wherein by changing CsBr layers, CsCl layers and PbCl2The thickness proportion of layer changes
CsPbBr3xCl3(1-x)Nanocrystalline ingredient, wherein x is controlled between 0.05~0.1, and each layer evaporation rate controlsThen, the MnCl of 15nm thickness is prepared on the CsCl layer by being vaporized on2Layer is to CsPbBr3xCl3(1-x)
Nano-crystal film carries out Mn doping, and thin film evaporation rate isFinally, promoting Mn doping with 280 DEG C of annealing 15min
CsPbBr3xCl3(1-x)Crystallization.
B4 prepares packaging protection layer on the ultraviolet detection film using drop coating mode, and the ultraviolet detection is thin
Film is packaged, and thus obtains the UV photodetector.
Specifically, packaging protection layer is prepared on the ultraviolet detection film in a manner of drop coating, then is heated at 90 DEG C
18min is dried.So far, it completes to adulterate CsPbBr based on Mn3xCl3(1-x)The system of the UV photodetector of nano-crystal film
It is standby.In present embodiment, the packaging protection layer is low cost, compactness is good, high stability and high hydrophobicity PDMS layer.
Embodiment 3
The preparation method for the UV photodetector that third embodiment of the invention provides mainly comprises the steps that
T1 provides one and has the silicon base of silicon nitride dielectric layer, and cleans to the silicon base.
Specifically, the silicon base for having silicon nitride dielectric layer is provided, uses detergent, acetone, ethyl alcohol, deionization respectively
Water is cleaned by ultrasonic the silicon base 18 minutes；Then, the silicon base is dried up using stream of nitrogen gas, then to the silicon base
UV ozone is carried out to handle 22 minutes.
T2 prepares electrode layer in the silicon base using photoetching alignment process and evaporation coating technique.
Specifically, electrode layer, the electricity are prepared in the silicon base using photoetching alignment process and evaporation coating technique
Pole layer electrode rule arrangement, and between electrode between be divided into 20 μm；The electrode layer with a thickness of between 80nm.
T3, prepares ultraviolet detection film on the electrode layer, and the ultraviolet detection film is Mn doping
CsPbBr3xCl3(1-x)Ultraviolet detection film is by the way that PbCl is successively deposited on the electrode layer2Layer, CsBr layers, CsCl layers
And MnCl2Layer and formed.
Specifically, ultraviolet detection film is prepared on the electrode layer, the ultraviolet detection film is Mn doping
CsPbBr3xCl3(1-x)Ultraviolet detection film.The ultraviolet detection film is that PbCl is deposited by multistep2Layer, CsBr layers, CsCl layers
And MnCl2What layer was prepared into, whole preparation process is in pressure less than 1 × 10-3It is carried out in the high-vacuum chamber of Pa.
In present embodiment, firstly, the PbCl of 150nm thickness is deposited on the electrode layer2CsBr is successively deposited in presoma
Layer, CsCl layers and PbCl2Layer, wherein by changing CsBr layers, CsCl layers and PbCl2The thickness proportion of layer changes
CsPbBr3xCl3(1-x)Nanocrystalline ingredient, wherein x is controlled between 0.05~0.1, and each layer evaporation rate controlsThen, the MnCl of 12nm thickness is prepared on the CsCl layer by being vaporized on2Layer is to CsPbBr3xCl3(1-x)It is nanocrystalline
Film carries out Mn doping, and thin film evaporation rate isFinally, promoting Mn doping with 250 DEG C of annealing 15min
CsPbBr3xCl3(1-x)Crystallization.
T4 prepares packaging protection layer on the ultraviolet detection film using drop coating mode, and the ultraviolet detection is thin
Film is packaged, and thus obtains the UV photodetector.
Specifically, packaging protection layer is prepared on the ultraviolet detection film in a manner of drop coating, then is heated at 100 DEG C
20min is dried.So far, it completes to adulterate CsPbBr based on Mn3xCl3(1-x)The system of the UV photodetector of nano-crystal film
It is standby.In present embodiment, the packaging protection layer is low cost, compactness is good, high stability and high hydrophobicity PDMS layer.
Embodiment 4
The preparation method for the UV photodetector that fourth embodiment of the invention provides mainly comprises the steps that
H1 provides one and has the silicon base of silicon nitride dielectric layer, and cleans to the silicon base.
Specifically, the silicon base for having silicon nitride dielectric layer is provided, uses detergent, acetone, ethyl alcohol, deionization respectively
Water is cleaned by ultrasonic the silicon base 19 minutes；Then, the silicon base is dried up using stream of nitrogen gas, then to the silicon base
UV ozone is carried out to handle 25 minutes.
H2 prepares electrode layer in the silicon base using photoetching alignment process and evaporation coating technique.
Specifically, electrode layer, the electricity are prepared in the silicon base using photoetching alignment process and evaporation coating technique
Pole layer electrode rule arrangement, and between electrode between be divided into 30 μm；The electrode layer with a thickness of between 100nm.
H3, prepares ultraviolet detection film on the electrode layer, and the ultraviolet detection film is Mn doping
CsPbBr3xCl3(1-x)Ultraviolet detection film is by the way that PbCl is successively deposited on the electrode layer2Layer, CsBr layers, CsCl layers
And MnCl2Layer and formed.
Specifically, ultraviolet detection film is prepared on the electrode layer, the ultraviolet detection film is Mn doping
CsPbBr3xCl3(1-x)Ultraviolet detection film.The ultraviolet detection film is that PbCl is deposited by multistep2Layer, CsBr layers, CsCl layers
And MnCl2What layer was prepared into, whole preparation process is in pressure less than 1 × 10-3It is carried out in the high-vacuum chamber of Pa.
In present embodiment, firstly, the PbCl of 200nm thickness is deposited on the electrode layer2CsBr is successively deposited in presoma
Layer, CsCl layers and PbCl2Layer, wherein by changing CsBr layers, CsCl layers and PbCl2The thickness proportion of layer changes
CsPbBr3xCl3(1-x)Nanocrystalline ingredient, wherein x is controlled between 0.05~0.1, and each layer evaporation rate controlsThen, the MnCl of 13nm thickness is prepared on the CsCl layer by being vaporized on2Layer is to CsPbBr3xCl3(1-x)Nano-crystalline thin
Film carries out Mn doping, and thin film evaporation rate isFinally, promoting Mn doping with 250 DEG C of annealing 15min
CsPbBr3xCl3(1-x)Crystallization.
H4 prepares packaging protection layer on the ultraviolet detection film using drop coating mode, and the ultraviolet detection is thin
Film is packaged, and thus obtains the UV photodetector.
Specifically, packaging protection layer is prepared on the ultraviolet detection film in a manner of drop coating, then is heated at 80 DEG C
15min is dried.So far, it completes to adulterate CsPbBr based on Mn3xCl3(1-x)The system of the UV photodetector of nano-crystal film
It is standby.In present embodiment, the packaging protection layer is low cost, compactness is good, high stability and high hydrophobicity PDMS layer.
UV photodetector provided by the invention and preparation method thereof, the preparation method using multistep evaporation coating method come
Full-inorganic ultraviolet detection film is prepared, the ultraviolet detection film is that Mn adulterates CsPbBr3xCl3(1-x)Ultraviolet detection film, has
Cost of material is lower and be more easy to get, preparation process is simpler, the absorption coefficient of light is higher, carrier transport more rapidly, detection it is sensitive
A series of advantages such as higher and dark current is smaller are spent, are the ideal structures of new ultra-violet photodetector.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should all include
Within protection scope of the present invention.
Claims (9)
1. a kind of preparation method of UV photodetector, which is characterized in that the preparation method the following steps are included:
(1) electrode layer is prepared in the silicon base with silicon nitride dielectric layer using photoetching alignment process and evaporation coating technique；
(2) ultraviolet detection film is prepared on the electrode layer, the ultraviolet detection film is Mn doping CsPbBr3xCl3(1-x)It is purple
Outer detection film is by the way that PbCl is successively deposited on the electrode layer2Layer, CsBr layers, CsCl layers and MnCl2Layer and formed
's；Wherein, x is 0.05~0.1；
(3) packaging protection layer is prepared on the ultraviolet detection film using drop coating mode, by the ultraviolet detection film into
Row encapsulation, thus obtains the UV photodetector.
2. the preparation method of UV photodetector as described in claim 1, it is characterised in that: the electrode of the electrode layer is advised
Rule arrangement, and the spacing between electrode is 10 μm~40 μm.
3. the preparation method of UV photodetector as described in claim 1, it is characterised in that: the steaming used in step (2)
Sending out speed is
4. the preparation method of UV photodetector as described in claim 1, it is characterised in that: described ultraviolet in step (2)
Film is detected with 250 DEG C~350 DEG C annealing 15min.
5. the preparation method of UV photodetector according to any one of claims 1-4, it is characterised in that: in step (3),
The packaging protection layer heats 15min~20min at 80 DEG C~100 DEG C is dried.
6. a kind of UV photodetector, it is characterised in that: the UV photodetector is using any one of claim 1-5 institute
What the preparation method for the UV photodetector stated was prepared.
7. UV photodetector as claimed in claim 6, it is characterised in that: the PbCl2Layer with a thickness of 150nm~
200nm；The MnCl2Layer with a thickness of 10nm~15nm.
8. UV photodetector as claimed in claim 6, it is characterised in that: the electrode layer with a thickness of 80nm~
100nm。
9. UV photodetector as claimed in claim 6, it is characterised in that: the packaging protection layer is PDMS layer；It is described
The forbidden band of ultraviolet detection film is 2.85eV.
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