CN103413827A - CdTe/PbTe heterojunction interface two-dimensional electronic gas structure - Google Patents

CdTe/PbTe heterojunction interface two-dimensional electronic gas structure Download PDF

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CN103413827A
CN103413827A CN2013102372343A CN201310237234A CN103413827A CN 103413827 A CN103413827 A CN 103413827A CN 2013102372343 A CN2013102372343 A CN 2013102372343A CN 201310237234 A CN201310237234 A CN 201310237234A CN 103413827 A CN103413827 A CN 103413827A
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cdte
pbte
dimensional electron
electron gas
solar cell
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CN103413827B (en
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吴惠桢
蔡春锋
金树强
张兵坡
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Zhejiang University ZJU
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Abstract

The invention specifically relates to a CdTe/PbTe heterojunction interface two-dimensional electronic gas structure. According to the CdTe/PbTe heterojunction interface two-dimensional electronic gas structure, a two-dimensional electronic gas structure is characterized in that CdTe grows on a PbTe surface along polar surfaces (111), (100) and (211) of CdTe crystals or PbTe grows on the polar surfaces (111), (100) and (211) of the CdTe crystals, and the interface forms a high-concentration two-dimensional electronic gas due to charge transfer. The CdTe/PbTe interface two-dimensional electronic gas is generated due to the heterojunction polar interface characteristics, is free of artificial adulteration, not only has high electron density, but also has high electron mobility, such as the electron mobility below 77 DEG K is more than three times that of bulk CdTe materials. By utilizing the characteristics of high electron density and high mobility, the power and speed of transistors can be improved; the contact resistance of CdTe and metal in CdTe in solar cells can be reduced; and the infrared luminous intensity of a narrow band-gap semiconductor can be enhanced, and the effect is very obvious.

Description

A kind of CdTe/PbTe heterojunction boundary two-dimensional electron gas structure
Technical field
The present invention is specifically related to a kind of CdTe/PbTe heterojunction boundary two-dimensional electron gas structure.
Background technology
The PbTe/CdTe system receives people's concern as the novel heterostructure of rare structural mismatch.The semi-conducting material PbTe of narrow band gap IV-VI family has the NaCl lattice structure, the L point of band gap between turned letter; And the material C dTe of II-VI family has zinc blende lattice structure, the Γ point of band gap between turned letter, this bi-material has common anion Te, and they have different interfacial characteristicses by different growth orientation ([100], [110], [111]) in conjunction with the heterojunction obtained.PbTe prepares for example ideal material of middle-infrared band laser and detector, solar cell of electronic device and opto-electronic device, and is widely used in fields such as civilian, Aero-Space and national defence.People have obtained take (100), (110), (111) the embedded water chestnut side octahedral bodily form PbTe quantum dot as interface by the CdTe/PbTe/CdTe quantum well annealing of [100] orientation, have greatly improved the fluorescence efficiency of PbTe.CdTe/PbTe (111) interface with respect to quantum dot, epitaxially grown PbTe/CdTe (111) interface has diverse structure, and PbTe and CdTe have (111) polarity atomic plane, when epitaxial film was very thin, built-in polarized electric field can change the physical characteristic of film.The change of this thin film physics characteristic of being brought by polarized electric field can be played the key effect that improves quantum efficiency in the PbTe photoelectric device, be expected to succeed in developing the novel mid-infrared light electric device of low threshold current, elevated operating temperature.In addition, due to the existence of the heavy elements such as Pb, Te, in the low dimensional structures that the PbTe/CdTe heterojunction forms, have larger spin(-)orbit coupling break-up energy, the application aspect spin electric device has larger prospect.For this reason, paper has been carried out the research work about the physical characteristic of the novel heterogeneous system of PbTe/CdTe and low dimensional structures thereof from theoretical and experiment two aspects.
Discovery is due to Pb in PbTe 2+Ion s 2Isolated electron right effect, make PbTe near interface serious distortion distortion, lost complete NaCl structure, had simultaneously larger metallicity.Polarized electric field strong in CdTe pulls down near interface part CdTe conduction band below Fermi level, a part of free electron is contributed in the partial ionization of Pb, Cd, Te atom, at near interface, formed two-dimensional electron gas (2DEG), the concentration calculated can reach 6.0 * 10 13Cm -2.We carry out to this system the body electron concentration that Hall effect test obtains and are up to 6 * 10 19Cm -3, and reduce rapidly along with the increase of CdTe thickness.During normal temperature, electron mobility is 300-400 cm 2/ Vs, under 77 K, mobility is up to 6700 cm 2/ Vs, and almost not variation of carrier concentration, it be very rare under so high electron concentration, keeping so high electron mobility in the other materials system.
Summary of the invention
The present invention be directed to the research invention of PbTe/CdTe system, at CdTe/PbTe polarity interface, found the two-dimensional electron gas of high electron density, two-dimensional electron gas has extremely important application in opto-electronic device, electronic device, solar cell.Concrete technical scheme of the present invention is as follows:
The present invention is a kind of CdTe/PbTe heterojunction boundary two-dimensional electron gas structure, described two-dimensional electron gas structure is the polar surface (111) of CdTe along its crystal, (100) and (211) are grown on the PbTe surface or PbTe is grown in the polar surface (111) of CdTe crystal, (100) and (211) upper, its interface forms the high concentration two-dimensional electron gas because electric charge shifts.
As further improvement, the electron concentration of two-dimensional electron gas of the present invention is higher than 1 * 10 18Cm -3, and charge carrier has high mobility.
As further improvement, the implementation of CdTe/PbTe of the present invention interface two-dimensional electron gas can be molecular beam epitaxy (MBE) or metal organic chemical vapor deposition (MOCVD) or thermal evaporation or electron beam evaporation or close-spaced sublimation (Close Space Sublimation) or magnetron sputtering.
The invention discloses a kind of application process of CdTe/PbTe heterojunction boundary two-dimensional electron gas structure, the formed two-dimensional electron gas of described two-dimensional electron gas structure can be applicable to opto-electronic device, electronic device and solar cell.
As further improvement, two-dimensional electron gas of the present invention can be applied to High Electron Mobility Transistor (HEMT).
As further improvement, solar cell of the present invention comprises the CdTe solar cell, CdS solar cell, CuInGaSe solar cell and CuZnSnSe solar cell.
As further improvement, two-dimensional electron gas of the present invention can form surface plasma with the photon coupling of incident, to the luminous generation effect of narrow gap semiconductor.
Beneficial effect of the present invention is as follows: CdTe/PbTe interface two-dimensional electron gas is produced by heterojunction polarity interfacial characteristics, it does not need artificial doping, it not only has high electron density, but also have high electron mobility, for example the electron mobility at the 77K temperature is that block CdTe material is more than three times.Utilize high electron density and high mobility characteristic, can improve transistorized power and speed; Can reduce the contact resistance of CdTe and metal in the CdTe solar cell; Can strengthen the intensity of narrow gap semiconductor infraluminescence.Effect is fairly obvious.
Embodiment
The invention discloses a kind of CdTe/PbTe heterojunction boundary two-dimensional electron gas structure, refer to the polar surface (111) of CdTe along its crystal, (100) and (211) are grown in PbTe or PbTe is grown on the CdTe surface of above-mentioned crystal face, its interface forms the high concentration two-dimensional electron gas because electric charge shifts; The high concentration Two-dimensional electron is so incensed that key character is that electron concentration is higher than 1 * 10 18Cm -3, and charge carrier has high mobility; It can be molecular beam epitaxy (MBE) or metal organic chemical vapor deposition (MOCVD) or thermal evaporation or electron beam evaporation or close-spaced sublimation (Close Space Sublimation) that CdTe/PbTe interface Two-dimensional electron is so incensed that to realize, or magnetron sputtering etc.;
CdTe/PbTe interface two-dimensional electron gas can be applied to High Electron Mobility Transistor (HEMT), because high concentration charge carrier and high mobility are the major parameters of HEMT material; Solar cell, comprise the CdTe solar cell, CdS solar cell, CuInGaSe solar cell and CuZnSnSe solar cell etc.; Because the solar cell material such as CdTe, CdS, because carrier concentration is on the low side, often forms schottky junction with Metal Contact, have higher junction resistance, affect the performance of solar cell.Forming CdTe/PbTe or the narrow band gap of CdS/PbTe heterojunction boundary high concentration two-dimensional electron gas and PbTe and the electrode contact that high electron concentration characteristic can make metal and solar cell is ohmic contact.CdTe/PbTe heterojunction boundary two-dimensional electron gas can form surface plasma with the photon coupling of incident, to semiconductor light emitting generation effect, for example strengthen the absorption to incident light, or change semi-conductive luminosity, thereby be applied at luminescent device and light-detecting device.
Below by specific embodiment, technical scheme of the present invention is further described in detail:
With molecular beam epitaxy, realize the structure of CdTe/PbTe heterojunction boundary two-dimensional electron gas
(a) at [111] crystal orientation Grown one deck PbTe crystal film, growing method adopts the method for PbTe distillation, and at the PbTe film between 200nm ~ 3000nm of deposit film thickness on substrate, depositing temperature is 80～500 ° of C again;
(b) at PbTe (111) surface molecular beam epitaxial growth CdTe (111) crystal film, adopt CdTe source sublimation method, growth temperature is at 50～500 ° of C, and CdTe thickness is 30nm ~ 3000nm;
(c) the above-mentioned CdTe/PbTe made (111) heterojunction boundary has intrinsic two-dimensional electron gas feature, measures charge carrier and carrier mobility as shown in Fig. 1 and Fig. 2 by Hall effect.
CdTe/PbTe heterojunction boundary two-dimensional electron gas is applied to metal/CdTe/CdS/ transparent conductive oxide film (TCO) solar cell
Existing CdTe solar cell, metal/CdTe/CdS/ conductive film the battery structures that adopt more, its back electrode adopts contacting of metal and CdTe more, because CdTe has than large band gap width (1.51eV during the 300K temperature), (be less than 10 because the carrier concentration of the CdTe in above-mentioned solar battery structure is on the low side 16Cm -3) metal often forms Schottky contacts with contacting of CdTe, thereby bring large contact resistance, affect open circuit voltage and the short circuit current of solar cell, we utilize has higher carrier concentration (>=5 * 10 at gap semiconductor PbTe (band gap 0.32 eV under room temperature) 15Cm -3) and the two-dimensional electron gas at CdTe/PbTe interface, guarantee to obtain ohmic contact, greatly reduce contact resistance, thereby promote the performance of CdTe solar cell, the PbTe film is as hearth electrode.
CdS in the CdTe thin-film solar cell structure, CdTe and PbTe film adopt close-spaced sublimation (Close Space Sublimation) method to obtain, transparent conductive oxide film (TCO) thickness 100nm, 1 micron of CdS thickness, 250 ° of C of growth temperature, 250 ° of C of 2～3 microns growth temperatures of CdTe thickness, PbTe thickness 500 nm, 300 ° of C of growth temperature, the PbTe film is as hearth electrode.
Finally, it is also to be noted that, what more than enumerate is only a specific embodiment of the present invention.Obviously, the invention is not restricted to above embodiment, many distortion can also be arranged.All distortion that those of ordinary skill in the art can directly derive or associate from content disclosed by the invention, all should think protection scope of the present invention.

Claims (7)

1. CdTe/PbTe heterojunction boundary two-dimensional electron gas structure, it is characterized in that, described two-dimensional electron gas structure is the polar surface (111) of CdTe along its crystal, (100) and (211) are grown on the PbTe surface or PbTe is grown in the polar surface (111) of CdTe crystal, (100) and (211) upper, its interface forms the high concentration two-dimensional electron gas because electric charge shifts.
2. CdTe/PbTe heterojunction boundary two-dimensional electron gas structure according to claim 1, is characterized in that, the electron concentration of described two-dimensional electron gas is higher than 1 * 10 18Cm -3, and charge carrier has high mobility.
3. CdTe/PbTe heterojunction boundary two-dimensional electron gas structure according to claim 1, it is characterized in that, the implementation of described CdTe/PbTe interface two-dimensional electron gas can be molecular beam epitaxy (MBE) or metal organic chemical vapor deposition (MOCVD) or thermal evaporation or electron beam evaporation or close-spaced sublimation (Close Space Sublimation) or magnetron sputtering.
4. the application process of a CdTe/PbTe heterojunction boundary two-dimensional electron gas structure as claimed in claim 1, is characterized in that, the formed two-dimensional electron gas of described two-dimensional electron gas structure can be applicable to opto-electronic device, electronic device and solar cell.
5. the application process of CdTe/PbTe heterojunction boundary two-dimensional electron gas structure according to claim 4, is characterized in that, described two-dimensional electron gas can be applied to High Electron Mobility Transistor (HEMT).
6. the application process of CdTe/PbTe heterojunction boundary two-dimensional electron gas structure according to claim 4, is characterized in that, described solar cell comprises the CdTe solar cell, CdS solar cell, CuInGaSe solar cell and CuZnSnSe solar cell etc.
7. the application process of CdTe/PbTe heterojunction boundary two-dimensional electron gas structure according to claim 4, is characterized in that, described two-dimensional electron gas can form surface plasma with the photon coupling of incident, to semiconductor light emitting generation effect.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105845759A (en) * 2016-04-15 2016-08-10 武汉锦隆工程技术有限公司 Solar cell and solar barricade with anti-collision alarm function
CN109873047A (en) * 2019-02-02 2019-06-11 浙江大学 A kind of novel heterojunction photon type infrared detector and preparation method and application

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102364704A (en) * 2011-03-07 2012-02-29 浙江大学 CdTe/PbTe middle infrared luminescence device and preparation method thereof

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
CN102364704A (en) * 2011-03-07 2012-02-29 浙江大学 CdTe/PbTe middle infrared luminescence device and preparation method thereof

Non-Patent Citations (2)

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Title
CHUNFENG CAI, ET AL: "Plasmon-enhanced mid-infrared luminescence from polar and lattice-structure-mismatched CdTe/PbTe single heterojunctions", 《APPLIED PHYSICS LETTERS》 *
R. LEITSMANN, ET AL: "Electronic-structure calculations for polar lattice-structure-mismatched interfaces: PbTe/CdTe(100)", 《PHYSICAL REVIEW B》 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105845759A (en) * 2016-04-15 2016-08-10 武汉锦隆工程技术有限公司 Solar cell and solar barricade with anti-collision alarm function
CN109873047A (en) * 2019-02-02 2019-06-11 浙江大学 A kind of novel heterojunction photon type infrared detector and preparation method and application

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