CN103258869A - Ultraviolet and infrared double-color detector based on zinc oxide materials and manufacturing method thereof - Google Patents
Ultraviolet and infrared double-color detector based on zinc oxide materials and manufacturing method thereof Download PDFInfo
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Abstract
The invention discloses an ultraviolet and infrared double-color detector based on zinc oxide materials and a manufacturing method thereof and belongs to the technical field of semiconductor photoelectric devices. The detector comprises a substrate (10), a buffer layer (11), a first n-type ohmic electrode contact layer (12), an infrared sensitive layer, a second n-type ohmic electrode contact layer (16), an ultraviolet sensitive layer (17) and a transparent electrode layer (19) which is arranged above the ultraviolet sensitive layer, wherein the buffer layer (11), the first n-type ohmic electrode contact layer (12), the infrared sensitive layer, the second n-type ohmic electrode contact layer (16), the ultraviolet sensitive layer (17) and the transparent electrode layer (19) are sequentially arranged on the substrate (10) in a growth mode. A bottom electrode (22), a middle electrode (21) and a top electrode (20) are arranged on the first n-type ohmic electrode contact layer (12), the second n-type ohmic electrode contact layer (16) and the transparent electrode layer (19) respectively. A three-electrode structure is adopted by the detector, namely, the middle electrode in the three-electrode structure serves as a common electrode of ultraviolet and infrared detection, an upper electrode and a lower electrode respectively serve as the other electrode of the ultraviolet and infrared detection, and the detector achieves the aim of simultaneously detecting ultraviolet radiation and infrared radiation.
Description
Technical field
The invention belongs to the semiconductor photoelectric device technical field, relate to a kind of ultraviolet infrared double-color detector based on zinc oxide material and preparation method thereof.
Background technology
Present informationization raises day by day to the requirement of optoelectronic component, and photodetector will be under complicated background and strong jamming, exactly detection of a target information.Single intrinsic weakness and limitation infrared, ultraviolet detector are more obvious.
Novel infrared detector based on GaAs/AlGaAs Multiple Quantum Well and InAs/InGaSb super crystal lattice material etc. has obtained development rapidly recently.Current, develop for infrared acquisition material of new generation with GaAs/AlGaAs, InAs/GaInSb etc.Wavelength is surveyed in the design of GaAs/AlGaAs QWIP can from 5 to 25 μ m, are one of ideal materials of infrared acquisition.But because membrane structure complexity, still need and carry out big quantity research in aspects such as high quality epitaxial growth technology and defective control, the error requirements of quantum well thickness and potential barrier component is quite harsh in the QWIP structure, as the GaAs/AlGaAs quantum well structure, the GaAs quantum well layer that general normal 550nm is thick, error is ± 20nm al composition error ± 1% of barrier layer.
Wavelength is in the ultra-violet radiation formula " solar spectrum blind area under the The atmospheric background " of 220-300 nm, and the ultraviolet detector that is operated in this wave band can effectively be followed the tracks of this wave band target.U.S., day, Germany man begin the research of ultraviolet detection material from the end of the nineties in last century.
In fact, many visible lights even infrared sensor can use at ultraviolet band, for example Si and SiC detector.Yet, suppressing visible light and need use filtering apparatus, this can increase the complexity of manufacturing undoubtedly and reduce performance.The Si detector is the best ultraviolet detector that is employed at present, and wavelength can be to 250 nm, but as indirect gap semiconductor, and it is the deadly defect of the spectral response device for preparing that sharp keen cut-off wavelength can't be provided.
In recent years, obtained certain progress at ultraviolet detector with investigation of materials both at home and abroad, succeeded in developing in succession based on SiC, ZnO, diamond thin, GaN, AlGaN thin-film material and the ultraviolet detector that can move under solar blind, it surveys wavelength at 250-300 nm.But some key issues wait to break through, and for example because AlGaN lacks the growth substrates of lattice coupling and heat coupling, defect concentration height, crystal mass are difficult to improve, thereby have limited device efficiency.
For improving the recognition capability to the detection of a target, following Detection Techniques development is that the radiation signal to target is surveyed simultaneously on multiband.
After the nineties, the GaN blue-light device made a breakthrough, ZnO became the new focus of the short-wavelength light electric material of people's concern.ZnO is a kind of direct gap semiconductor material of hexagonal structure, energy gap under the room temperature is 3.37 eV, exciton bind energy much larger than exciton bind energy and the room temperature heat energy (26 meV) of GaN, is the ideal material of the efficient ultraviolet excitonic luminescence of room temperature and Laser Devices up to 60 meV.With respect to wide bandgap semiconductor materials such as GaN and SiC, ZnO can be lower than the high-quality film of formation under 500 ℃ of temperature.In addition, the ZnO raw material resources is abundant, and nontoxic to environment, thermal stability and chemical stability height have great application prospect.In addition, the absorption of the visible light of ZnO is very little, and these character all are conducive to prepare high performance ultraviolet detector.Zinc oxide (ZnO) and oxygen zinc-magnesium (MgZnO) material are because growth temperature is low, defect concentration is low, and nontoxic, abundant raw material and the wide advantages such as (3.37 ~ 7.8 eV, 370～159 nm) of band gap modulation range, are more suitable for the preparation of detector.Utilize i-MgZnO/n-ZnO or i-Zn
yMg
1-yO/n
+-Zn
xMg
1-xPhotoelectron emissions effect (HEIWIP) can realize infrared acquisition in O (x〉y) the heterojunction boundary work function.So ZnO material (comprising ZnO, ZnMgO) provides good material foundation for the preparation of the infrared multicolour detector spare of ultraviolet.
It mainly is to utilize the ZnO of non-doping or ZnMgO material intrinsic to absorb the intraband transition realization that ultraviolet band is surveyed mechanism.What the absorption of infrared band response mechanism free carrier caused is excited charge carrier at highly doped ZnO or Zn
xMg
1-xThe Zn of O layer and non-doping
yMg
1-yO(x〉y, guarantee that the band gap of heavily doped layer is less than the band gap of the intrinsic layer of non-doping) generation of layer band-to-band transition, its process mainly comprises: the free carrier that height is mixed in the layer absorbs; Be excited charge carrier and cross height and mix layer and non-ly mix potential barrier between the layer; Last charge carrier forms photoelectric current under effect of electric field, realize the purpose of photodetection.
Summary of the invention
In view of the ZnO/ZnMgO structure can prepare the ultraviolet detection device, the invention provides ultraviolet infrared double-color detector of a kind of ZnO/ZnMgO of employing heterojunction structure and preparation method thereof.The present invention adopts the ZnO of non-doping or ZnMgO material intrinsic to absorb intraband transition and realizes ultraviolet detection, and that utilizes free carrier to absorb to cause is excited charge carrier at highly doped ZnO or Zn
xMg
1-xThe Zn of O layer and non-doping
yMg
1-yO(x〉y, guarantee that the band gap of heavily doped layer is less than the band gap of the intrinsic layer of non-doping) layer band-to-band transition produces infrared band and surveys, thus the purpose that realization ultraviolet infrared double color is surveyed.
Ultraviolet infrared double-color detector based on zinc oxide material of the present invention, device architecture comprises substrate, resilient coating, a n type Ohmic electrode contact layer, infrared-sensitive layer, the 2nd n type Ohmic electrode contact layer, the ultraviolet sensitivity layer of on substrate, growing successively, and be arranged on transparent electrode layer on the ultraviolet sensitivity layer, be respectively arranged with bottom electrode, target and top electrodes at a described n type Ohmic electrode contact layer, the 2nd n type Ohmic electrode contact layer and transparent electrode layer.
Ultraviolet detection obtains by the electric current that detects between top electrodes and the target, and infrared acquisition obtains by the electric current that detects between target and the bottom electrode, can realize the detection of ultraviolet and infrared double color simultaneously.
For achieving the above object, ultraviolet infrared double-color detector of the present invention specific requirement is as follows:
Substrate: the material of employing is sapphire, zinc oxide or magnesium oxide.
Resilient coating: be grown on the substrate, the material of employing is ZnO, and thickness is 0.02 μ m to 0.2 μ m.
The one n type Ohmic electrode contact layer: be grown on the resilient coating, the material of employing is ZnO, and thickness is between 0.5 μ m to 1 μ m, and doping content n exists
Extremely
, the impurity that mixes is Al or Ga.
The infrared-sensitive layer: the multicycle layer that first intrinsic layer of the mutual alternating growth of serving as reasons and heavy doping n type layer constitute, its periodicity is m, m is between 1 ~ 30.Wherein, first intrinsic layer is grown on the n type ohmic contact layer, and energy gap is
, material is the Zn of involuntary doping
yMg
1-yO, electronic carrier concentration is
Extremely
, thickness is 0.02 to 0.4 μ m; Heavy doping n type layer growth is on first intrinsic layer, and energy gap is
, and
, the material of employing is ZnO or Zn
xMg
1-xO (x〉y), n type doping content concentration is
Extremely
, thickness is 0.02 to 0.4 μ m.
The 2nd n type Ohmic electrode contact layer: be grown on the infrared-sensitive layer (multicycle top layer), the material of employing is ZnO, and n type doping content is
Extremely
, thickness is between 0.1 to 0.6 μ m.
Ultraviolet sensitivity layer: be grown on the 2nd n type ohmic contact layer, for energy gap is
Second intrinsic layer, and
The material that adopts is ZnO or ZnMgO, and electronic carrier concentration n is
Extremely
, thickness is between 0.2 to 0.6 μ m.
Transparent electrode layer: being formed at energy gap is
Second intrinsic layer on;
Top electrodes is formed at a zonule on the transparent electrode layer;
Target is formed at the electrode window through ray of the 2nd n type ohmic contact layer;
Bottom electrode is formed at the electrode window through ray of a n type ohmic contact layer.
The present invention makes above-mentioned ultraviolet infrared double-color detector according to following steps:
Step 1: grown buffer layer, a n type Ohmic electrode contact layer, infrared-sensitive layer, the 2nd n type Ohmic electrode contact layer, ultraviolet sensitivity layer successively on Sapphire Substrate;
Step 2: through the first time photoetching process and dry etching exposed portions serve the 2nd n type ohmic contact layer; Pass through photoetching process and dry etching exposed portions serve the one n type ohmic contact layer for the second time again, in order to do Ohm contact electrode thereon;
Step 3: form the transparent metal window through photoetching process for the third time at the ultraviolet sensitivity layer, with electron beam filming equipment or sputtering equipment deposit sheet metal successively Ni/Au, thickness is respectively 2nm/2nm, formation transparent electrode layer through annealing after;
Step 4: form the transparency electrode window at transparent electrode layer through the 4th photoetching process, with electron beam filming equipment or sputtering equipment depositing metal Ni/Au/Ti/Au successively on transparent electrode layer, thickness is respectively 10nm/200nm/50nm/200nm, forms the top electrodes of double-color detector;
Step 5: form first, second n type ohmic contact layer window through the 5th photoetching process, on the second and the one n type ohmic contact layer that etching is exposed in step 2 and 3, with electron beam filming equipment or sputtering equipment depositing metal Ti/Al/Ti/Au successively, thickness is respectively 10nm/200nm/50nm/200nm, forms target and the bottom electrode of double-color detector.
In the zno-based ultraviolet infrared double-color detector of the present invention, ultraviolet detection partly adopts Schottky barrier structure or p-i-n structure: be transparent electrode layer/intrinsic ZnO(ZnMgO when adopting the Schottky barrier structure); When adopting the p-i-n structure, be p-ZnO/i-ZnO/n-ZnO or p-ZnMgO/i-ZnMgO/n-ZnMgO.The UV absorption district is at the top of device.Because the penetration depth of infrared radiation in the zno-based material be more much bigger than ultraviolet, the INFRARED ABSORPTION coefficient of intrinsic zno-based material is little than heavy doping respective material also, and infrared acquisition adopts below the UV absorption district, multiply periodic i-ZnMgO/n
+-ZnO or i-Zn
yMg
1-yO/n
+-Zn
xMg
1-xO (x〉y) as the infrared-sensitive district, take full advantage of the HEIWIP effect after the employing multicycle structure, improve infrared response.Utilize highly doped i-ZnMgO and n
+-ZnO or highly doped i-Zn
yMg
1-yO and n
+-Zn
xMg
1-xWork function difference on the heterojunction boundary that O constitutes
EV is by highly doped ZnO or Zn
xMg
1-xO district absorption infrared radiation (
(μ m)) realize passing through heterojunction boundary after the interior photoelectron emissions, being added in intrinsic layer ZnMgO or Zn
yMg
1-yThe electric field of O is collected the generation signal of telecommunication and is reached infrared acquisition.
The present invention has following beneficial effect:
1, zno-based ultraviolet infrared double-color detector provided by the invention, ultraviolet detection partly adopts Schottky barrier structure or p-i-n structure, and infrared acquisition adopts multiply periodic i-ZnMgO/n
+-ZnO or i-Zn
yMg
1-yO/n
+-Zn
xMg
1-xO (x〉y) as the infrared-sensitive district, take full advantage of the HEIWIP effect after the employing multicycle structure, can significantly improve infrared response.
2, zno-based ultraviolet infrared double-color detector provided by the invention, adopt three-electrode structure, be that target in the three-electrode structure is as the common electrode of ultraviolet, infrared acquisition, top electrodes and bottom electrode are made another electrode of ultraviolet, infrared acquisition respectively, realize surveying simultaneously ultraviolet, infrared radiation.
3, zno-based ultraviolet infrared double-color detector provided by the invention, can be to ultraviolet sensitivity district applying bias, rely on the depletion region electric field of device itself can realize ultraviolet detection, be that the ultraviolet detection part is owing to adopt Schottky barrier or p-i-n structure, do not need applying bias and reach the purpose of surveying ultra-violet radiation, can avoid the photoconductive influence of zno-based material.
4, zno-based ultraviolet infrared double-color detector provided by the invention, ultraviolet detection partly adopts Schottky barrier or p-i-n structure simultaneously, surveys ultraviolet portion and has advantages such as dark current is little, response speed is fast.Because ZnO, ZnMgO material are big to the absorption coefficient of the ultra-violet radiation more than the energy gap, reach 10
5/ cm the order of magnitude, the material in the infrared-sensitive of the intrinsic ZnO in the ultraviolet sensitivity district or ZnMgO district is ultraviolet filter, thereby significantly reduces ultra-violet radiation to the influence in infrared-sensitive district.
Description of drawings
Fig. 1 is that ultraviolet infrared double-color detector Schottky barrier of the present invention-HEIWIP structure is implemented illustration;
Fig. 2 is that ultraviolet infrared double-color detector p-i-n-HEIWIP structure of the present invention is implemented illustration;
Fig. 3 is ultraviolet infrared double-color detector Schottky barrier of the present invention-HEIWIP device architecture schematic diagram;
Fig. 4 is ultraviolet infrared double-color detector p-i-n-HEIWIP device architecture schematic diagram of the present invention.
Embodiment
Embodiment one: in the ultraviolet infrared double-color detector material therefor structure of present embodiment, Schottky barrier or p-i-n structure are adopted in the ultraviolet detection zone, are placed on the top of device, and infrared acquisition adopts multiply periodic i-ZnMgO/n
+-ZnO or i-Zn
yMg
1-yO/n
+-Zn
xMg
1-xO (x〉y) as the infrared-sensitive district, take full advantage of the HEIWIP effect, improve infrared response.The infrared-sensitive district is below device ultraviolet detection zone, between the two by the 2nd n Ohmic electrode contact layer (n type concentration
Extremely
) connect.
The ultraviolet infrared double-color detector that present embodiment provides adopts three-electrode structure, comprises successively from bottom to up:
Substrate carries out the growth that the ultraviolet infrared double-color detector is used material structure at this substrate;
Resilient coating is grown on the substrate;
The one n type ohmic contact layer is grown on the resilient coating, is used for ohmic contact;
The infrared-sensitive layer, the multicycle layer that first intrinsic layer of the mutual alternating growth of serving as reasons and heavy doping n type layer constitute, wherein, first intrinsic layer is grown on the n type ohmic contact layer, and energy gap is
, and be involuntary doping; Heavy doping n type layer growth is on first intrinsic layer, and energy gap is
, and
The 2nd n type ohmic contact layer is grown on the multicycle layer, and the subregion is used as n type Ohm contact electrode;
The ultraviolet sensitivity layer: energy gap is
Intrinsic layer, be grown on the 2nd n type ohmic contact layer, and
Transparent electrode layer is formed at energy gap and is
Intrinsic layer (being the ultraviolet sensitivity layer) on;
Top electrodes is formed at a zonule on the transparent electrode layer;
Target is formed at the electrode window through ray of the 2nd n type ohmic contact layer;
Bottom electrode is formed at the electrode window through ray of a n type ohmic contact layer.
Wherein, substrate is sapphire.Buffer growth is on substrate, and the material of employing is zinc oxide, thickness 0.02 ~ 0.2 μ m.The one n type ohmic contact layer is grown on the resilient coating, and the material of employing is ZnO, and thickness is between 0.5 to 1 μ m, and doping content n exists
Extremely
, the impurity that mixes is Al, Ga.The forbidden band is
First intrinsic layer be grown on the n type ohmic contact layer, material is the Zn of involuntary doping
yMg
1-yO, electronic carrier concentration is
Extremely
, thickness is 0.02 to 0.4 μ m.Energy gap is
Heavy doping n type layer growth in energy gap be
First intrinsic layer on, the material of employing is ZnO or Zn
xMg
1-xO, (x〉y), n type doping content concentration is
Extremely
, thickness is 0.02 to 0.4 μ m.The multicycle floor that is made of first intrinsic layer and the heavy doping n type floor of mutual alternating growth is the infrared-sensitive district, and its periodicity is m, and m is between 1 ~ 30.The 2nd n type ohmic contact layer is to be grown on the multicycle floor in infrared-sensitive district, and the subregion will contact usefulness as target, and the material of employing is ZnO, and n type doping content is
Extremely
, thickness is between 0.1 to 0.6 μ m.Energy gap is
Intrinsic layer is grown on the 2nd n type ohmic contact layer, and the material of employing is ZnO or ZnMgO, and electronic carrier concentration n is
Extremely
, thickness is between 0.2 to 0.6 μ m.
When ultraviolet detection partly adopts the Schottky barrier structure, in energy gap be
Intrinsic layer on deposit sheet metal Ni/Au or Pt/Au, thickness is respectively 2 ~ 5nm/2 ~ 5nm, 500 ℃ of nitrogen oxygen mixed gas atmosphere down annealing formed transparent electrode layers in 5 minutes, this transparent electrode layer and energy gap are
Intrinsic layer form Schottky barrier, wherein energy gap is
Intrinsic layer be the ultraviolet sensitivity district; When ultraviolet detection partly adopts the p-i-n structure, in energy gap be
Intrinsic layer on the growth one p-type layer, material is ZnO or ZnMgO, thickness 0.02 ~ 0.2 μ m, the p-type doping content exists
Extremely
Deposit sheet metal Ni/Au or Pt/Au on the p-type layer then, thickness is respectively 2 ~ 5nm/2 ~ 5nm, 500 ℃ of nitrogen oxygen mixed gas atmosphere down annealing formed transparent electrode layers in 5 minutes, energy gap is
Intrinsic layer be the ultraviolet sensitivity layer.
Top electrodes, target and bottom electrode constitute three-electrode structure, ultraviolet detection top electrodes and target, infrared acquisition target and bottom electrode.The bottom electrode that infrared acquisition is used is produced on the n type ohmic contact layer through exposing after the etching, the target that infrared acquisition and ultraviolet detection share is produced on the 2nd n type ohmic contact layer through exposing after the etching, the material of two electrodes is followed successively by Ti/Al/Ti/Au, and thickness is respectively 10nm/200nm/50nm/200nm; The top electrodes that ultraviolet detection is used is produced on the zonule on the transparent electrode layer, and electrode material is followed successively by Ni/Au/Ti/Au, and thickness is respectively 10nm/200nm/50nm/200nm.
This detector is used for surveying simultaneously the ultraviolet infrared radiation, surveys the long wavelength threshold of ultra-violet radiation by the Schottky barrier structure in ultraviolet sensitivity district or the energy gap of the intrinsic layer in the p-i-n structure
Determine; The long wavelength threshold of surveying infrared radiation by energy gap is
First intrinsic layer and energy gap be
Work function difference on the heterojunction boundary that heavy doping n type layer constitutes
Determine, and
Embodiment two: it is example (material structure such as Fig. 1 and device architecture such as Fig. 3) that present embodiment adopts Schottky barrier-HEIWIP structure with the infrared and ultraviolet double-color detector, specifies ultraviolet infrared double-color detector implementation step.Be to utilize MOCVD or MBE equipment grown buffer layer 11:ZnO successively in Sapphire Substrate 10 as its structure of Fig. 1, thickness is at 0.02 ~ 0.2 μ m.At resilient coating 11 growths the one n type ohmic contact layer 12:ZnO, thickness is at 0.5 ~ 1 μ m, and doping content n exists
~
Scope.First intrinsic layer, 13/ heavily doped layer 14:i-ZnMgO/n successively grows on a n type ohmic contact layer 12
+-ZnO or i-Zn
yMg
1-yO/ n
+-Zn
xMg
1-xO (x〉y); First intrinsic layer, 13/ heavily doped layer 14 of alternating growth forms multicycle layer 15, wherein, and the electronic carrier concentration of i-ZnMgO
Extremely
, thickness is 0.02 ~ 0.4 μ m; n
+-ZnO or n
+-Zn
xMg
1-xThe concentration n of O exists
Extremely
Scope, thickness are 0.02 ~ 0.4 μ m; At i-ZnMgO/n
+-ZnO or i-Zn
yMg
1-yO/n
+-Zn
xMg
1-xGrowth the 2nd n ohmic contact layer 16:n on the top layer of O (x〉y) multicycle layer 15
+-ZnO, n type concentration exists
Extremely
Scope, thickness is at 0.1 ~ 0. 5 mu m range.At the 2nd n type ohmic contact layer 16 growth second intrinsic layer 17:i-ZnO or i-ZnMgO, electronic carrier concentration is
Extremely
, thickness is between 0.2 ~ 0.6 μ m.
When ultraviolet detection adopted the Schottky barrier structure, epitaxial growth finished.Device architecture as shown in Figure 3.Its concrete manufacture method may further comprise the steps:
Step 1: grown buffer layer 11, a n type ohmic contact layer 12, the multicycle layer 15, the 2nd n type ohmic contact layer 16, second intrinsic layer 17 that are formed by first intrinsic layer, 13/ heavily doped layer 14 of alternating growth successively on Sapphire Substrate 10;
Step 2: through the first time photoetching process and dry etching exposed portions serve the 2nd n type ohmic contact layer 16; Pass through photoetching process and dry etching exposed portions serve the one n type ohmic contact layer 12 for the second time again, in order to do Ohm contact electrode thereon.
Step 3: through the transparent metal of photoetching process formation for the third time window, with electron beam filming equipment or sputtering equipment deposit sheet metal successively Ni/Au, thickness is respectively 2 ~ 5nm/2 ~ 5nm, forms transparent electrode layer 19 after annealing; (as Fig. 3)
Step 3: form the transparency electrode window through the 4th photoetching process, with electron beam filming equipment or sputtering equipment depositing metal Ni/Au/Ti/Au successively on transparent electrode layer, thickness is respectively 10nm/200nm/50nm/200nm, forms the top electrodes 20 of double-color detector;
Step 4: form first, second n type ohmic contact layer window through the 5th photoetching process, with electron beam filming equipment or sputtering equipment depositing metal Ti/Al/Ti/Au successively, thickness is respectively 10nm/200nm/50nm/200nm, forms target 21, the bottom electrode 22 of double-color detector.
Embodiment three: what present embodiment and embodiment two were different is that when ultraviolet detection adopted the p-i-n structure, then at second intrinsic layer, 17 growth one deck p-type layer 18:p-ZnO or p-ZnMgO, hole concentration was
Extremely
Scope, thickness 0.02 ~ 0.2 μ m, p-i-n-HEIWIP structure as shown in Figure 2, device architecture is as shown in Figure 4.
Claims (10)
1. based on the ultraviolet infrared double-color detector of zinc oxide material, it is characterized in that described detector comprises substrate (10), the resilient coating (11) of on substrate (10), growing successively, the one n type Ohmic electrode contact layer (12), the infrared-sensitive layer, the 2nd n type Ohmic electrode contact layer (16), ultraviolet sensitivity layer (17), and be arranged on transparent electrode layer (19) on the ultraviolet sensitivity layer, at a described n type Ohmic electrode contact layer (12), be respectively arranged with bottom electrode (22) on the 2nd n type Ohmic electrode contact layer (16) and the transparent electrode layer (19), target (21) and top electrodes (20).
2. the ultraviolet infrared double-color detector based on zinc oxide material according to claim 1 is characterized in that the material that described substrate (10) adopts is sapphire, zinc oxide or magnesium oxide; The material that resilient coating (11) adopts is ZnO, and thickness is 0.02 μ m to 0.2 μ m.
3. the ultraviolet infrared double-color detector based on zinc oxide material according to claim 1, the multicycle layer (15) that it is characterized in that serving as reasons described infrared-sensitive layer first intrinsic layer (13) and the heavy doping n type layer (14) of mutual alternating growth constitute, its periodicity is m, and m is between 1 ~ 30; First intrinsic layer (13) is grown on the n type ohmic contact layer (12), and energy gap is
, material is the Zn of involuntary doping
yMg
1-yO, electronic carrier concentration is
Extremely
, thickness is 0.02 to 0.4 μ m; Heavy doping n type layer (14) is grown on first intrinsic layer (13), and energy gap is
, and
, the material of employing is ZnO or Zn
xMg
1-xO (x〉y), n type doping content concentration is
Extremely
, thickness is 0.02 to 0.4 μ m.
4. the ultraviolet infrared double-color detector based on zinc oxide material according to claim 1 is characterized in that the material that a described n type Ohmic electrode contact layer (12) adopts is ZnO, and thickness is between 0.5 μ m to 1 μ m, and doping content n exists
Extremely
, the impurity that mixes is Al or Ga; The material that the 2nd n type Ohmic electrode contact layer (16) adopts is ZnO, and n type doping content is
Extremely
, thickness is between 0.1 to 0.6 μ m.
5. the ultraviolet infrared double-color detector based on zinc oxide material according to claim 1 is characterized in that described ultraviolet sensitivity layer (17) for energy gap is
Second intrinsic layer, and
The material that adopts is ZnO or ZnMgO, and electronic carrier concentration n is
Extremely
, thickness is between 0.2 to 0.6 μ m.
6. the ultraviolet infrared double-color detector based on zinc oxide material according to claim 1 is characterized in that described transparent electrode layer (19) is Ni/Au or Pt/Au layer, and thickness is respectively 2 ~ 5nm/2 ~ 5nm.
7. the ultraviolet infrared double-color detector based on zinc oxide material according to claim 1 is characterized in that described top electrodes (20) Ni/Au/Ti/Au electrode; Target (21) and bottom electrode (22) are the Ti/Al/Ti/Au electrode.
8. the ultraviolet infrared double-color detector based on zinc oxide material according to claim 1, it is characterized in that when the p-i-n structure is adopted in the ultraviolet detection zone, described detector also comprises P type layer (18), P type layer (18) is grown on the ultraviolet sensitivity layer (17), and transparent electrode layer (19) is arranged on the P type layer (18); The material that P type layer (18) adopts is ZnO or ZnMgO, and thickness is respectively 0.02 ~ 0.2 μ m, and the p-type doping content exists
Extremely
9. the manufacture method of the described ultraviolet infrared double-color detector based on zinc oxide material of a claim 1-7 is characterized in that described method comprises the steps:
Step 1: grown buffer layer (11), a n type Ohmic electrode contact layer (12), infrared-sensitive layer, the 2nd n type Ohmic electrode contact layer (16), ultraviolet sensitivity layer (17) successively on substrate (10);
Step 2: through the first time photoetching process and dry etching exposed portions serve the 2nd n type ohmic contact layer (16); Pass through photoetching process and dry etching exposed portions serve the one n type ohmic contact layer (12) for the second time again;
Step 3: form the transparent metal window through photoetching process for the third time at ultraviolet sensitivity layer (17), with electron beam filming equipment or sputtering equipment deposit sheet metal successively, formation transparent electrode layer (19) through annealing after;
Step 4: form the transparency electrode window through the 4th photoetching process at transparent electrode layer (19), go up depositing metal with electron beam filming equipment or sputtering equipment at transparent electrode layer (19), form the top electrodes (20) of double-color detector;
Step 5: form a n type ohmic contact layer window, the 2nd n type ohmic contact layer window through the 5th photoetching process, on etching is exposed in step 2 and 3 the 2nd n type ohmic contact layer (16) and a n type ohmic contact layer (12), with electron beam filming equipment or sputtering equipment depositing metal, form target (21) and the bottom electrode (22) of double-color detector.
10. the manufacture method of the ultraviolet infrared double-color detector based on zinc oxide material according to claim 9, it is characterized in that in the described step (1), when ultraviolet detection adopts the p-i-n structure, then at second intrinsic layer (17) growth one deck p-type layer (18); The material that P type layer (18) adopts is ZnO or ZnMgO, and thickness is 0.02 ~ 0.2 μ m, and the p-type doping content exists
Extremely
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| CN103646986A (en) * | 2013-12-26 | 2014-03-19 | 中国科学院半导体研究所 | AlGaN-based bicolor solar blind ultraviolet detector and manufacturing method thereof |
| US9806125B2 (en) | 2015-07-28 | 2017-10-31 | Carrier Corporation | Compositionally graded photodetectors |
| US9865766B2 (en) | 2015-07-28 | 2018-01-09 | Carrier Corporation | Ultraviolet photodetectors and methods of making ultraviolet photodetectors |
| US9928727B2 (en) | 2015-07-28 | 2018-03-27 | Carrier Corporation | Flame detectors |
| CN108321244A (en) * | 2018-03-26 | 2018-07-24 | 厦门芯荣光电科技有限公司 | UV photodetector and preparation method thereof for ultraviolet IR dual spectral detection |
| CN108615783A (en) * | 2018-04-19 | 2018-10-02 | 中芯集成电路（宁波）有限公司 | A kind of Schottky ultraviolet detector and its manufacturing method |
| CN108615782A (en) * | 2018-04-19 | 2018-10-02 | 中芯集成电路（宁波）有限公司 | A kind of ultraviolet detector and its manufacturing method |
| US10126165B2 (en) | 2015-07-28 | 2018-11-13 | Carrier Corporation | Radiation sensors |
| CN109103267A (en) * | 2018-08-09 | 2018-12-28 | 镇江镓芯光电科技有限公司 | A kind of AlGaN base MSM structure solar-blind UV detector and preparation method thereof |
| CN111139449A (en) * | 2019-12-31 | 2020-05-12 | 深圳信息职业技术学院 | Zinc oxide based transparent electrode photoelectric detector and preparation method thereof |
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| CN103646986B (en) * | 2013-12-26 | 2016-08-17 | 中国科学院半导体研究所 | A kind of double-colored solar blind ultraviolet detector of AlGaN base and manufacture method |
| CN103646986A (en) * | 2013-12-26 | 2014-03-19 | 中国科学院半导体研究所 | AlGaN-based bicolor solar blind ultraviolet detector and manufacturing method thereof |
| US10718662B2 (en) | 2015-07-28 | 2020-07-21 | Carrier Corporation | Radiation sensors |
| US9806125B2 (en) | 2015-07-28 | 2017-10-31 | Carrier Corporation | Compositionally graded photodetectors |
| US9865766B2 (en) | 2015-07-28 | 2018-01-09 | Carrier Corporation | Ultraviolet photodetectors and methods of making ultraviolet photodetectors |
| US9928727B2 (en) | 2015-07-28 | 2018-03-27 | Carrier Corporation | Flame detectors |
| US10126165B2 (en) | 2015-07-28 | 2018-11-13 | Carrier Corporation | Radiation sensors |
| US11029202B2 (en) | 2015-07-28 | 2021-06-08 | Carrier Corporation | Radiation sensors |
| CN108321244A (en) * | 2018-03-26 | 2018-07-24 | 厦门芯荣光电科技有限公司 | UV photodetector and preparation method thereof for ultraviolet IR dual spectral detection |
| CN108321244B (en) * | 2018-03-26 | 2024-03-29 | 厦门三优光电股份有限公司 | Ultraviolet photoelectric detector for ultraviolet and infrared double-color detection and preparation method thereof |
| CN108615783A (en) * | 2018-04-19 | 2018-10-02 | 中芯集成电路（宁波）有限公司 | A kind of Schottky ultraviolet detector and its manufacturing method |
| CN108615782A (en) * | 2018-04-19 | 2018-10-02 | 中芯集成电路（宁波）有限公司 | A kind of ultraviolet detector and its manufacturing method |
| CN109103267A (en) * | 2018-08-09 | 2018-12-28 | 镇江镓芯光电科技有限公司 | A kind of AlGaN base MSM structure solar-blind UV detector and preparation method thereof |
| CN111139449A (en) * | 2019-12-31 | 2020-05-12 | 深圳信息职业技术学院 | Zinc oxide based transparent electrode photoelectric detector and preparation method thereof |
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Application publication date: 20130821 |