CN209447826U - A kind of low-dark current mesa snowslide single-photon detector - Google Patents

A kind of low-dark current mesa snowslide single-photon detector Download PDF

Info

Publication number
CN209447826U
CN209447826U CN201920036772.9U CN201920036772U CN209447826U CN 209447826 U CN209447826 U CN 209447826U CN 201920036772 U CN201920036772 U CN 201920036772U CN 209447826 U CN209447826 U CN 209447826U
Authority
CN
China
Prior art keywords
layer
type
dark current
mesa
snowslide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201920036772.9U
Other languages
Chinese (zh)
Inventor
李冠海
陈碧城
欧凯
郁菲茏
赵增月
陈金
陈效双
陆卫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Institute of Technical Physics of CAS
Original Assignee
Shanghai Institute of Technical Physics of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Institute of Technical Physics of CAS filed Critical Shanghai Institute of Technical Physics of CAS
Priority to CN201920036772.9U priority Critical patent/CN209447826U/en
Application granted granted Critical
Publication of CN209447826U publication Critical patent/CN209447826U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Light Receiving Elements (AREA)

Abstract

This patent discloses a kind of low-dark current mesa snowslide single-photon detectors, including P type substrate, I type to absorb dynode layer, N-type layer.P type substrate, I type absorb dynode layer, N-type layer and successively grow on substrate according to sequence from top to bottom；Photon connects the cathode of power supply from P type substrate incidence, P type substrate, and I layers as the avalanche multiplication region of carrier and the uptake zone of photon, the anode of N-type layer external power supply.This patent structure is simple, easily prepared, while can reduce the dark counting as caused by carrier concentration difference and defect density, improves signal-to-noise ratio.

Description

A kind of low-dark current mesa snowslide single-photon detector
Technical field
This patent is related to detector technology, refers specifically to the list of a kind of high-quantum efficiency based on avalanche effect, low-dark current Photon detector.
Background technique
In near infrared band, water can absorb most infrared ray.Because near infrared band is closer from visible light wave range, visit The filter plate for surveying device surface blocks that ability is weaker to visible light, so the light in actual detection environment can be dry to its signal It disturbs, this detect detector can only at the dark night of unglazed no rain, and 3~5 μm of infrared detector believes these interference It number is not responding to, the working environment of explorer satellite can be enabled to be not limited thereto, considerably increase the working time of detector therefore The infrared detector that response wave length is developed at 3~5 μm is very promising.
Quantum communications are to carry unit using single photon as information.To detector, more stringent requirements are proposed for this: real Now to the detection of atomic weak signal.Single-photon detector can detect the least energy of light --- and photon is quantum information skill One of the device of art most critical.Single-photon detecting survey technology is in terms of biological detection, astronomical ranging, atmosphere survey dirty, super-distance ranging It suffers from and is widely applied.
The low energy gap width of mercury cadmium telluride results in the defect of big dark current, the great shadow of the order of magnitude of dark current size Detector sensitivity is rung.Dark current Crack cause in semiconductor material is very various, has because carrier concentration is uneven The dissufion current of even generation has tunnel caused by the recombination current generated because of defect capture and release carrier, quantum tunneling Wear electric current.Other than improving the preparation process of material, the order of magnitude of dark current can also be reduced by optimizing panel detector structure.
Summary of the invention
This patent, which essentially consists in, overcomes defect of the existing technology, provides a kind of low-dark current mesa snowslide single photon Panel detector structure and doping parameters.To achieve the above object, the technical solution of this patent is as follows:
A kind of low-dark current mesa snowslide single-photon detector structure disclosed in this patent, including substrate 1, buffer layer 2, P-type layer 3, intrinsic layer 4, N-type layer 5, cathode end 6, anode exit 7, passivating film 8.On the substrate 1 according to from Upward sequence successively grown buffer layer 2, P-type layer 3, intrinsic layer 4, N-type layer 5 and passivating film 8 down, cathode end 6 and anode Exit 7 is grown in P-type layer and N-type layer respectively by ion beam sputtering.
1 material of substrate is cadmium-zinc-teiluride, GaAs, cadmium telluride or silicon.
The buffer layer 2 is cadmium telluride, reduces the lattice mismatch of substrate material and mercury cadmium telluride, if substrate material is tellurium zinc Cadmium does not need grown buffer layer then.
The P-type layer 3 is the p-type mercury cadmium telluride of the vacancy Hg doping, and thickness range is 7~9 μm, and doping concentration is 5 × 1015 ~1 × 1016cm-3The order of magnitude.
The intrinsic layer 4 is the N-type HgCdTe Regional of unintentional doping, uniform high field intensity region, as photon The avalanche multiplication region of uptake zone and carrier.
The doping concentration of the N-type layer 5 is 1 × 1018cm-3~8 × 1018cm-3The order of magnitude, thickness range be 2.8 μm~ 3.2μm。
The cathode end 6 is Cr/Au or Sn/Au two-layer electrode, the Ohmic contact that lower layer contacts with mesa structure Layer is chromium or tin, and upper layer metal conducting layer is gold, is grown in P-type layer.
The anode exit 7 is Cr/Au or Sn/Au two-layer electrode, and ohm that lower layer contacts with mesa structure connects Contact layer is chromium or tin, and upper layer metal conducting layer is gold, absorbs the electronics of multiplication.
The passivating film 8 is CdTe and ZnS dual layer passivation film, ZnS in lower CdTe upper, to reach reduction device surface Electric leakage, reduces the effect of cross-talk.
This patent provides a kind of production method of low-dark current mesa snowslide single-photon detector, comprising the following steps:
1. on substrate 1, growing the CdTe buffer layer 2 of one layer of 0.8mm~1.2mm；
2. growing the tellurium cadmium of the vacancy Hg doping on the buffer layer by molecular beam epitaxy technique or vertical liquid phase epitaxial method Mercury forms 7 μm~9 μm of p-type mercury cadmium telluride thin layer 3；
3. taking MBE Multi layer Growth original position doping techniques, precisely the intrinsic layer 4 of original position 0.2 μm~1 μ m thick of doped growing And 2.8 μm~3.2 μ m thick N-type layer 5, formed PIN structural；
4. wet etch techniques is taken to form micro- table top, land depth is about 5 μm~7 μm；
5. ZnS is in lower CdTe upper in mesa surfaces growth CdTe and ZnS dual layer passivation film 8；
6. using hydrochloric acid and the dual layer passivation membrane material of bichromate solution removal electrode hole site；
7. utilizing ion beam sputtering in electrode position, good gold is formed on growth Cr/Au electrode, with p-type HgCdTe Half contacts, and as cathode end 6, Cr/Au electrode is grown on N-type HgCdTe as anode exit 7, is finally completed this specially The preparation of the low-dark current mesa snowslide single-photon detector of benefit.
After above-mentioned technical proposal, this patent have it is below the utility model has the advantages that
The tunnelling current that device under low temperature is greatly reduced by adjusting the parameter of intrinsic layer improves avalanche diode list The signal-to-noise ratio and response rate of photon detector.
Detailed description of the invention
Fig. 1 is the feature cross-section schematic diagram of this patent；
Fig. 2 is the dark current of 1 mesa avalanche diode structure of embodiment in this patent with voltage relationship, and ordinate is pair Number coordinate；
Fig. 3 is the dark current of 2 mesa avalanche diode structure of embodiment in this patent with voltage relationship, and ordinate is pair Number coordinate；
Fig. 4 is the dark current of 3 mesa avalanche diode structure of embodiment in this patent with voltage relationship, and ordinate is pair Number coordinate；
Fig. 5 is the dark current of 4 mesa avalanche diode structure of embodiment in this patent with voltage relationship, and ordinate is pair Number coordinate；
Label in Fig. 1 are as follows:
1 is substrate；
2 be buffer layer；
3 be P-type layer；
4 be intrinsic layer；
5 be N-type layer；
6 be cathode end；
7 be anode exit；
8 be passivating film.
Specific embodiment
Embodiment 1
See Fig. 1, the low-dark current mesa snowslide single-photon detector structure of the present embodiment.
Detector includes cadmium-zinc-teiluride substrate 1, P-type layer 3, intrinsic layer 4, N-type layer 5, cathode end 6,7 and of anode exit Passivating film 8.
P-type layer 3, intrinsic layer 4, N-type layer 5, CdTe/ZnS dual layer passivation film 8 are raw in cadmium-zinc-teiluride according to sequence from bottom to top On substrate 1；P-type layer material is the mercury cadmium telluride of Hg vacancy doping, and with a thickness of 9 μm, doping concentration is 1 × 1016cm-3, 120 μm wide； 20 μm wide by two, it is equal to intrinsic layer electric field to avoid electric field near electrode that 120 μm of long rectangular electrodes are added in P-type layer both ends The influence of evenness；Intrinsic layer doping concentration is 5 × 1014cm-3, with a thickness of 1 μm；The doping concentration of N-type layer is 1 × 1018cm-3, thick Degree is 2.8 μm, has anode exit in N-type layer, the ohmic contact layer of electrode lower part is tin, with a thickness of 10 μm, the metal on top Conductive layer Au, with a thickness of 30 μm, 8 lower layer of dual layer passivation film is that the upper layer CdTe is ZnS, and infra-red radiation is carried on the back incident from p-type.
The production method of above-mentioned low-dark current mesa snowslide single-photon detector structure, comprising the following steps:
1. growing the CdTe buffer layer (2) of one layer of 0.8mm in substrate silicon；
2. growing the tellurium cadmium of the vacancy Hg doping on the buffer layer by molecular beam epitaxy technique or vertical liquid phase epitaxial method Mercury forms 9 μm of p-type mercury cadmium telluride thin layer (3)；
3. taking MBE Multi layer Growth original position doping techniques, precisely the intrinsic layer (4) and 2.8 of original position 1 μ m thick of doped growing The N-type layer (5) of μ m thick；
4. wet etch techniques is taken to form micro- table top, land depth is about 6 μm；
5. ZnS is in lower CdTe upper in mesa surfaces growth CdTe and ZnS dual layer passivation film (8)；
6. using hydrochloric acid and the dual layer passivation membrane material of bichromate solution removal electrode hole site；
7. utilizing ion beam sputtering in electrode position, Sn/Au two-layer electrode, the Europe that lower layer contacts with mesa structure are grown Nurse contact layer is tin, and upper layer metal conducting layer is gold, it partly contacts with good gold is formed on p-type HgCdTe, is drawn as cathode It holds (6), Sn/Au electrode is grown on N-type HgCdTe as anode exit (7).
Fig. 2 is the dark current of 1 mesa avalanche diode structure of embodiment in this patent with voltage relationship.It is in substrate Material is cadmium-zinc-teiluride, and electrode material is tin/gold, and intrinsic layer thickness is 1 μm, and intrinsic layer doping concentration is 5 × 1014cm-3, P-type layer With a thickness of 9 μm, doping concentration is 1 × 1016cm-3, the doping concentration of N-type layer is 1 × 1018cm-3, corresponding when with a thickness of 2.8 μm Dark current with voltage relationship.
Embodiment 2
See Fig. 1, the low-dark current mesa snowslide single-photon detector structure of the present embodiment.
Detector includes gallium arsenide substrate 1, P-type layer 3, intrinsic layer 4, N-type layer 5, cathode end 6,7 and of anode exit Passivating film 8.
P-type layer 3, intrinsic layer 4, N-type layer 5, CdTe/ZnS dual layer passivation film 8 are raw in GaAs according to sequence from bottom to top On substrate 1；P-type layer material is the mercury cadmium telluride of Hg vacancy doping, and with a thickness of 8 μm, doping concentration is 5 × 1015cm-3, 120 μm wide； 20 μm wide by two, it is equal to intrinsic layer electric field to avoid electric field near electrode that 120 μm of long rectangular electrodes are added in P-type layer both ends The influence of evenness；Intrinsic layer doping concentration is 1 × 1015cm-3, with a thickness of 0.5 μm；The doping concentration of N-type layer is 5 × 1018cm-3, There is anode exit with a thickness of 3 μm, in N-type layer, the ohmic contact layer of electrode lower part is tin, with a thickness of 10 μm, the metal on top Conductive layer Au, with a thickness of 30 μm, 8 lower layer of dual layer passivation film is that the upper layer CdTe is ZnS, and infra-red radiation is carried on the back incident from p-type.
The production method of above-mentioned low-dark current mesa snowslide single-photon detector structure, comprising the following steps:
1. growing the CdTe buffer layer (2) of one layer of 1mm on substrate GaAs；
2. growing the tellurium cadmium of the vacancy Hg doping on the buffer layer by molecular beam epitaxy technique or vertical liquid phase epitaxial method Mercury forms 8 μm of p-type mercury cadmium telluride thin layer (3)；
3. taking MBE Multi layer Growth original position doping techniques, precisely the intrinsic layer (4) and 3 of original position 0.5 μ m thick of doped growing The N-type layer (5) of μ m thick；
4. wet etch techniques is taken to form micro- table top, land depth is about 6 μm；
5. in mesa surfaces growth CdTe and ZnS double layer passivation layer (8)；
6. using hydrochloric acid and the dual layer passivation membrane material of bichromate solution removal electrode hole site；
7. utilizing ion beam sputtering in electrode position, good gold is formed on growth Sn/Au electrode, with p-type HgCdTe Half contacts, and as cathode end (6), Sn/Au electrode is grown on N-type HgCdTe as anode exit (7).
Fig. 3 is the dark current of 2 mesa avalanche diode structure of embodiment in this patent with voltage relationship.It is in substrate Material is GaAs, and electrode material is tin/gold, and intrinsic layer thickness is 0.5 μm, and intrinsic layer doping concentration is 1 × 1015cm-3, p-type For layer with a thickness of 8 μm, doping concentration is 5 × 1015cm-3, the doping concentration of N-type layer is 5 × 1018cm-3, corresponding when with a thickness of 3 μm Dark current with voltage relationship.
Embodiment 3
See Fig. 1, the low-dark current mesa snowslide single-photon detector structure of the present embodiment.
Detector includes cadmium telluride substrate 1, P-type layer 3, intrinsic layer 4, N-type layer 5, cathode end 6,7 and of anode exit Passivating film 8.
P-type layer 3, intrinsic layer 4, N-type layer 5, CdTe/ZnS dual layer passivation film 8 are raw in cadmium telluride according to sequence from bottom to top On substrate 1；P-type layer material is the mercury cadmium telluride of Hg vacancy doping, and with a thickness of 7 μm, doping concentration is 1 × 1016cm-3, 120 μm wide； 20 μm wide by two, it is equal to intrinsic layer electric field to avoid electric field near electrode that 120 μm of long rectangular electrodes are added in P-type layer both ends The influence of evenness；Intrinsic layer doping concentration is 5 × 1015cm-3, with a thickness of 0.5 μm；The doping concentration of N-type layer is 8 × 1018cm-3, There is anode exit with a thickness of 3 μm, in N-type layer, the ohmic contact layer of electrode lower part is chromium, with a thickness of 10 μm, the metal on top Conductive layer Au, with a thickness of 30 μm, 8 lower layer of dual layer passivation film is that the upper layer CdTe is ZnS, and infra-red radiation is carried on the back incident from p-type.
The production method of above-mentioned low-dark current mesa snowslide single-photon detector structure, comprising the following steps:
1. grow the mercury cadmium telluride of the vacancy Hg doping on substrate by molecular beam epitaxy technique or vertical liquid phase epitaxial method, Form 7 μm of p-type mercury cadmium telluride thin layer (3)；
2. taking MBE Multi layer Growth original position doping techniques, precisely the intrinsic layer (4) and 3 of original position 0.5 μ m thick of doped growing The N-type layer (5) of μ m thick；
3. wet etch techniques is taken to form micro- table top, land depth is about 6 μm；
4. in mesa surfaces growth CdTe and ZnS double layer passivation layer (8)；
5. using hydrochloric acid and the dual layer passivation membrane material of bichromate solution removal electrode hole site；
6. utilizing ion beam sputtering in electrode position, good gold is formed on growth Cr/Au electrode, with p-type HgCdTe Half contacts, and as cathode end (6), Cr/Au electrode is grown on N-type HgCdTe as anode exit (7).
Fig. 4 is the dark current of 3 mesa avalanche diode structure of embodiment in this patent with voltage relationship.It is in substrate Material is cadmium telluride, and electrode material is chrome gold, and intrinsic layer thickness is 0.5 μm, and intrinsic layer doping concentration is 5 × 1015cm-3, p-type For layer with a thickness of 7 μm, doping concentration is 1 × 1016cm-3, the doping concentration of N-type layer is 8 × 1018cm-3, corresponding when with a thickness of 3 μm Dark current with voltage relationship.
Embodiment 4
See Fig. 1, the low-dark current mesa snowslide single-photon detector structure of the present embodiment.
Detector includes that substrate 1, CdTe buffer layer 2, P-type layer 3, intrinsic layer 4, N-type layer 5, cathode end 6, anode draw Outlet 7 and passivating film 8.
CdTe buffer layer 2, P-type layer 3, intrinsic layer 4, N-type layer 5, CdTe/ZnS dual layer passivation film 8 are suitable according to from bottom to top Sequence is raw on Si substrate 1；P-type layer material is the mercury cadmium telluride of Hg vacancy doping, and with a thickness of 9 μm, doping concentration is 1 × 1016cm-3, It is 120 μm wide；20 μm wide by two, 120 μm of long rectangular electrodes are added in P-type layer both ends to avoid electric field near electrode to intrinsic The influence of layer electric fields uniform degree；Intrinsic layer doping concentration is 1 × 1016cm-3, with a thickness of 0.2 μm；The doping concentration of N-type layer is 1 ×1018cm-3, have anode exit with a thickness of 3.2 μm, in N-type layer, the ohmic contact layer of electrode lower part is chromium, with a thickness of 10 μ M, the metal conducting layer Au on top, with a thickness of 30 μm, it is ZnS that 8 lower layer of dual layer passivation film, which is the upper layer CdTe, and infra-red radiation is from p-type Back is incident.
The production method of above-mentioned low-dark current mesa snowslide single-photon detector structure, comprising the following steps:
1. growing the CdTe buffer layer (2) of one layer of 1mm in substrate silicon；
2. growing the tellurium cadmium of the vacancy Hg doping on the buffer layer by molecular beam epitaxy technique or vertical liquid phase epitaxial method Mercury forms 9 μm of p-type mercury cadmium telluride thin layer (3)；
3. take MBE Multi layer Growth original position doping techniques, precisely the intrinsic layer (4) of original position doped growing 0.2 μ m thick and The N-type layer (5) of 3.2 μ m thicks；
4. wet etch techniques is taken to form micro- table top, land depth is about 6 μm；
5. in mesa surfaces growth CdTe and ZnS double layer passivation layer (8)；
6. using hydrochloric acid and the dual layer passivation membrane material of bichromate solution removal electrode hole site；
7. utilizing ion beam sputtering in electrode position, good gold is formed on growth Cr/Au electrode, with p-type HgCdTe Half contacts, and as cathode end (6), Cr/Au electrode is grown on N-type HgCdTe as anode exit (7).
Fig. 5 is the dark current of 4 mesa avalanche diode structure of embodiment in this patent with voltage relationship.It is in substrate Material is silicon, and electrode material is chrome gold, and intrinsic layer thickness is 0.2 μm, and intrinsic layer doping concentration is 1 × 1016cm-3, P-type layer thickness Degree is 9 μm, and doping concentration is 1 × 1016cm-3, the doping concentration of N-type layer is 1 × 1018cm-3, corresponding when with a thickness of 3.2 μm Dark current is with voltage relationship.
Particular embodiments described above has carried out further in detail the purpose of this patent, technical scheme and beneficial effects Describe in detail it is bright, it is all it should be understood that be not limited to this patent the foregoing is merely specific implementation of the patent example Within the spirit and principle of this patent, any modification, equivalent substitution, improvement and etc. done should be included in the guarantor of this patent Within the scope of shield.

Claims (9)

1. a kind of low-dark current mesa snowslide single-photon detector, including it is substrate (1), buffer layer (2), P-type layer (3), intrinsic Layer (4), N-type layer (5), cathode end (6), anode exit (7), passivation layer (8), it is characterised in that:
The structure of the detector are as follows: on the substrate (1) successively grown buffer layer (2), P-type layer (3), intrinsic layer (4), N-type layer (5), passivation layer (8)；The cathode end (6) is on (4) 20 μm of lateral distance intrinsic layer of substrate (1), anode Exit (7) is located at N-type layer (5) above.
2. a kind of low-dark current mesa snowslide single-photon detector according to claim 1, which is characterized in that described Substrate (1) material is cadmium-zinc-teiluride, GaAs, cadmium telluride or silicon.
3. a kind of low-dark current mesa snowslide single-photon detector according to claim 1, which is characterized in that described Buffer layer (2) is cadmium telluride, and thickness range is 0.8mm~1.2mm.
4. a kind of low-dark current mesa snowslide single-photon detector according to claim 1, which is characterized in that described P-type layer (3) is the p-type mercury cadmium telluride of the vacancy Hg doping, and thickness range is 7 μm~9 μm.
5. a kind of low-dark current mesa snowslide single-photon detector according to claim 1, which is characterized in that described The N-type mercury cadmium telluride that layer (4) are unintentional doping is levied, thickness range is at 0.2 μm~1 μm.
6. a kind of low-dark current mesa snowslide single-photon detector according to claim 1, which is characterized in that described The thickness range of N-type layer (5) is 2.8 μm~3.2 μm.
7. a kind of low-dark current mesa snowslide single-photon detector according to claim 1, which is characterized in that described Cathode end (6) be Cr and Au or Sn and Au two-layer electrode, the ohmic contact layer that lower layer contacts with mesa structure be chromium or tin, Upper layer metal conducting layer is gold, and position is apart from 18 μm~22 μm of mesa edge.
8. a kind of low-dark current mesa snowslide single-photon detector according to claim 1, which is characterized in that described Anode exit (7) be Cr and Au or Sn and Au two-layer electrode, the ohmic contact layer that lower layer contacts with mesa structure be chromium or tin, Upper layer metal conducting layer is gold, is located at N-type layer (5) center.
9. a kind of low-dark current mesa snowslide single-photon detector according to claim 1, which is characterized in that described Passivation layer (8) is CdTe and ZnS dual layer passivation film, and ZnS is in lower CdTe upper.
CN201920036772.9U 2019-01-10 2019-01-10 A kind of low-dark current mesa snowslide single-photon detector Active CN209447826U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201920036772.9U CN209447826U (en) 2019-01-10 2019-01-10 A kind of low-dark current mesa snowslide single-photon detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201920036772.9U CN209447826U (en) 2019-01-10 2019-01-10 A kind of low-dark current mesa snowslide single-photon detector

Publications (1)

Publication Number Publication Date
CN209447826U true CN209447826U (en) 2019-09-27

Family

ID=68017516

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201920036772.9U Active CN209447826U (en) 2019-01-10 2019-01-10 A kind of low-dark current mesa snowslide single-photon detector

Country Status (1)

Country Link
CN (1) CN209447826U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109545883A (en) * 2019-01-10 2019-03-29 中国科学院上海技术物理研究所 A kind of low-dark current mesa snowslide single-photon detector and preparation method
CN114420783A (en) * 2022-02-10 2022-04-29 中国科学院上海技术物理研究所 Mesa type avalanche single photon detector based on double avalanche mechanism

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109545883A (en) * 2019-01-10 2019-03-29 中国科学院上海技术物理研究所 A kind of low-dark current mesa snowslide single-photon detector and preparation method
CN109545883B (en) * 2019-01-10 2023-12-26 中国科学院上海技术物理研究所 Low dark current mesa type avalanche single photon detector and preparation method thereof
CN114420783A (en) * 2022-02-10 2022-04-29 中国科学院上海技术物理研究所 Mesa type avalanche single photon detector based on double avalanche mechanism

Similar Documents

Publication Publication Date Title
CN107863413B (en) A kind of AlGaN base day blind ultraviolet snowslide heterojunction phototransistor detector and preparation method thereof
CN104576805B (en) A kind of shortwave/medium wave/long wave three look Infrared Detectors based on InAs/GaSb II class super crystal lattice material
Echendu et al. High short-circuit current density CdTe solar cells using all-electrodeposited semiconductors
CN109285911A (en) A kind of three wave band infrared detector of shortwave/medium wave/long wave and preparation method thereof
CN111244203B (en) Based on Ga2O3Sunlight blind ultraviolet detector of/CuI heterojunction PN junction
CN109545883A (en) A kind of low-dark current mesa snowslide single-photon detector and preparation method
CN103258869A (en) Ultraviolet and infrared double-color detector based on zinc oxide materials and manufacturing method thereof
CN106711249A (en) Preparation method of two-color infrared detector based on indium-arsenic-antimony (InAsSb) material
CN107403848B (en) Backside illuminated cascade multiplication avalanche photodiode
CN109686844B (en) Photosensitive sensor based on perovskite self-powered behavior
CN109037374A (en) Based on NiO/Ga2O3Ultraviolet photodiode and preparation method thereof
CN101872798A (en) Ultraviolet and infrared double-color detector and manufacturing method thereof
CN209447826U (en) A kind of low-dark current mesa snowslide single-photon detector
CN106684200A (en) Fabrication method of three-color infrared detector
CN106206832A (en) A kind of single-stage barrier structure narrow bandpass ultraviolet detector
Gwozdz et al. Deep traps in the ZnO nanorods/Si solar cells
Guo et al. Polarization assisted interdigital AlGaN/GaN heterostructure ultraviolet photodetectors
CN114038926A (en) High-gain planar avalanche single photon detector and preparation method thereof
CN112420397B (en) Polarity inversion type wavelength-distinguishable photodetector based on gallium nitride and preparation method thereof
CN115513315A (en) High-saturation-threshold mercury cadmium telluride detector chip and preparation method thereof
CN111211196B (en) High-sensitivity high-linearity detector
Cao et al. Fabrication of high quantum efficiency pin AlGaN detector and optimization of p-layer and i-layer thickness
CN217086583U (en) High-gain planar avalanche single photon detector
CN108649095A (en) Field-effect tube structure photoelectric device and preparation method thereof based on nano-crystal structure carbon film
Hwang et al. Base-width modulation effects on the optoelectronic characteristics of n-ITO/p-NiO/n-ZnO heterojunction bipolar phototransistors

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant