CN103474503A - Ultraviolet single-wavelength MSM photoelectric detector based on two-dimensional crystal lattices - Google Patents
Ultraviolet single-wavelength MSM photoelectric detector based on two-dimensional crystal lattices Download PDFInfo
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- CN103474503A CN103474503A CN2013104617472A CN201310461747A CN103474503A CN 103474503 A CN103474503 A CN 103474503A CN 2013104617472 A CN2013104617472 A CN 2013104617472A CN 201310461747 A CN201310461747 A CN 201310461747A CN 103474503 A CN103474503 A CN 103474503A
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Abstract
The invention discloses an ultraviolet single-wavelength MSM photoelectric detector, and belongs to the technical field of semiconductor photoelectric devices. The ultraviolet single-wavelength MSM photoelectric detector based on two-dimensional crystal lattices uses the quantum restriction effect to achieve the adjustable single wavelength and can develop the advantage of high quantum level state density more easily. The ultraviolet single-wavelength MSM photoelectric detector comprises a substrate, the two-dimensional crystal lattices with the quantum level and a metal interdigital electrode. The two-dimensional crystal lattices grow on the substrate alternatively, and the number of the alternative growth periods is at least 20. Each two-dimensional crystal lattice in each alternative growth period is composed of a first dielectric film layer and a second dielectric film layer, wherein the forbidden band of the first dielectric film layer is arranged in the forbidden band of the second dielectric film layer and forms a semiconductor I-class superlattice, the first dielectric film is used as a potential well, and the second dielectric film is used as a potential barrier; the Schottky contact is formed between the metal interdigital electrode and the two-dimensional crystal lattices.
Description
Technical field
The invention belongs to the semiconductor photoelectronic device technical field, relate to a kind of metal-semiconductor-metal (MSM) photodetector, relate in particular to the single wavelength MSM of a kind of ultraviolet based on two-dimensional crystal lattice photodetector.
Background technology
The ultraviolet detection technology has broad application prospects in the military and civilian field.It can be used for missile guidance, missile warning, ultraviolet communication etc. at military aspect; Aspect civilian, can be used for flame detection, environmental monitoring, biological medicine analysis etc., become in recent years one of study hotspot of detecting technique in the world.The structure of the solid state detector that the ultraviolet detection technology is common comprises the structures such as metal-semiconductor-metal (MSM), photoconduction, p-i-n type.By contrast, the MSM structure rely on that electric capacity is little, plane, simple without doping, preparation technology, be convenient to the plurality of advantages such as monolithic optoelectronic integration and enjoy favor.
Current, people develop day blind ultraviolet 200～280nm wave band MSM photodetector mainly based on the direct wide band gap semiconducter of III group-III nitride.The ternary mixed crystal Al wherein formed by GaN and AlN
xga
1-xn material energy gap can regulate and control to 6.2eV from 3.4eV with the Al component, and corresponding absorption band edge changes to 200nm from 365nm serially, therefore is regarded as making day ideal material of blind region ultraviolet detector device.Yet, conventional Al
xga
1-xn base semiconductor UV photodetector is shorter than for wavelength the ultraviolet light that absorbs band edge all can respond (A.Knigge; et.al; " AlGaN photodetectors for the UV-C spectral region on planar and epitaxial laterally overgrown AlN/sapphire templates; " Physica Status Solidi (C); vol.10; no.3, pp.294-297, Mar.2013.; F.Xie, et.al, " Large-area solar-blind AlGaN-based MSM photodetectors with ultra-low dark current; " Electronics Letters, vol.47, no.16, p.930,2011.) and to the ultraviolet signal of specific wavelength in this response range not tool differentiate and detectivity, restricted the application of semiconductor ultraviolet electric explorer; On the other hand, due to high Al contents Al
xga
1-xn(x>0.4) the thin film epitaxial growth technology is still immature, the film defects density of growth high (Y.-L.Tsai, et.al, " Observation of compositional pulling phenomenon in Al
xga
1-xn (0.4<x<1.0) films grown on (0001) sapphire substrates, " Applied Physics Letters, vol.82, no.1, p.31, and 2003.), restricting Al
xga
1-xn base ultraviolet light electric explorer is toward the development of short wavelength's direction.
Recently, received increasing concern based on two-dimensional crystal lattice material development novel photoelectric-detection device.Two-dimensional crystal lattice refers to a kind of two-dimensional material of only having single or several atomic layer level thickness, its electronic structure is discrete quantum state, and Effective band gap is wider than its body material energy gap, therefore the UV photodetector based on the two-dimensional crystal lattice material will be conducive to overcome conventional Al
xga
1-xthe problems referred to above that N base photodetector exists, bring new opportunity for researching and developing novel solar blind UV electric explorer.
Summary of the invention
Purpose of the present invention is intended to overcome current Al
xga
1-xthe deficiency of N base ultraviolet MSM photodetector, provide a kind of single wavelength MSM of the ultraviolet based on two-dimensional crystal lattice photodetector that utilizes the quantum limitation effect realization can regulate and control single wavelength and more easily bring into play high this advantage of the quantum level density of states.
The present invention includes substrate, there is two-dimensional crystal lattice and the metal interdigital electrode of quantum level;
Described two-dimensional crystal lattice is alternately growth on substrate, and the cycle of alternating growth is at least 20; The two-dimensional crystal lattice in each alternating growth cycle is formed by first medium rete and second medium rete, the forbidden band of first medium rete is dropped in the forbidden band of second medium rete, become semiconductor I class superlattice, the first medium rete is as potential well, the second medium rete is as potential barrier, and metal interdigital electrode and two-dimensional crystal lattice form Schottky contacts.
Described substrate can be homo-substrate or foreign substrate; Described homo-substrate can be gallium nitride or aluminum-nitride single crystal etc.; Described foreign substrate can be sapphire or carborundum etc.
The cycle of described alternating growth can be 20～200; Preferably 80～110.
Described first medium rete can be gallium nitride single crystal or aluminum gallium nitride mixed crystal etc.
Described second medium rete can be aluminum-nitride single crystal or aluminum gallium nitride mixed crystal etc.
Described metal interdigital electrode can be titanium/gold, nickel/gold or titanium/platinum/gold combination etc.
There is the AlN hypothallus on described foreign substrate surface preferably epitaxial growth, and AlN hypothallus thickness can be 100nm～1 μ m.The AlN hypothallus is as resilient coating.The AlN hypothallus can discharge stress, reduces the lattice mismatch of Sapphire Substrate and two-dimensional crystal lattice material, guarantees the good quality of crystal growth.
Compared with the prior art, beneficial effect of the present invention is as follows:
1, the single wavelength MSM of a kind of ultraviolet based on two-dimensional crystal lattice of the present invention photodetector, introduce two-dimensional crystal lattice.By epitaxial growth first medium rete and second medium rete, form two-dimensional crystal lattice.The forbidden band of first medium rete is dropped in the forbidden band of second medium rete fully.Because the first medium thicknesses of layers is only single or several atomic layers, form the two-dimensional crystal lattice of first medium rete.At this moment, charge carrier is restricted along moving of two-dimensional crystal lattice normal direction, forms discrete quantum level, but not continuous can being with under the corresponding body materials behavior of first medium rete.When UV-irradiation is arranged, be excited after the Electron absorption photon energy and transit to the electronics quantum level on the quantum level of hole, form electron hole pair.Under the applying bias voltage effect, electronics, hole form photoelectric current to the positive and negative electrode drift respectively.Therefore, the present invention introduces the two-dimensional crystal lattice with quantum level, is conducive to realize the detection of single wavelength.
2, the single wavelength MSM of a kind of ultraviolet based on two-dimensional crystal lattice of the present invention photodetector, can be by changing the thickness of potential well first medium rete, and regulating and controlling can be poor between quantum level, can design the photodetector of different single wavelength.And, along with potential well layer narrows down (the fixing base in thick situation), can differ from increasing energy gap under the corresponding body materials behavior of first medium rete between electronics and hole quantum level, response wave length moves to the shortwave direction, is conducive to realize the detection of deep UV (ultraviolet light).
3, the single wavelength MSM of a kind of ultraviolet based on two-dimensional crystal lattice of the present invention photodetector, two-dimensional crystal lattice is controlled by potential barrier at the Electronic Transport Properties perpendicular to the heterogeneous interface direction.Here quantum tunneling effect plays dominating role.The present invention is thick by controlling second medium rete base, forms charge carrier tunnelling between quantum level, strengthens between adjacent potential well and is coupled, and is beneficial to charge carrier transporting in vertical two-dimensional crystal lattice z direction.Although the quantum level density of states is high, due to every layer of two-dimensional crystal lattice thin thickness, the ultraviolet light that can absorb is limited, and more traditional only according to the photoelectric current of one deck two-dimensional crystal lattice response to take the MSM photodetector that the body material is substrate more weak.Photodetector of the present invention, by the quantum tunneling of two-dimensional crystal lattice interlayer, is more easily brought into play the advantage that the quantum level density of states is high, to obtain higher quantum efficiency and responsiveness.
The accompanying drawing explanation
The structural representation that Fig. 1 is the embodiment of the present invention (before encapsulation).In Fig. 1, each mark means: 1. substrate; 2. the two-dimensional crystal lattice of one-period; 3. first medium rete; 4. second medium rete; 5. metal interdigital electrode; 6. resilient coating.
The response light electric current spectral line that Fig. 2 is the embodiment of the present invention.In Fig. 2, abscissa means wavelength (nm), and ordinate means photoelectric current (A).
Embodiment
Below in conjunction with drawings and Examples, the present invention is further illustrated.
The present invention includes substrate 1, resilient coating 6, a plurality of on substrate 1 alternately the two-dimensional crystal lattice 2(with quantum level of growth cycle by first medium rete 3 and second medium rete 4, formed) and metal interdigital electrode 5.
Substrate 1 is sapphire (foreign substrate), and described sapphire surface epitaxial growth has the AlN hypothallus, and AlN hypothallus thickness can be 100nm～1 μ m.The AlN hypothallus is as resilient coating 6.The AlN hypothallus can discharge stress, reduces the lattice mismatch of Sapphire Substrate and two-dimensional crystal lattice material, guarantees the good quality of crystal growth.The two-dimensional crystal lattice 2 in each alternating growth cycle is formed by first medium rete 3 and second medium rete 4, the forbidden band of first medium rete 3 is dropped in the forbidden band of second medium rete 4 fully, become semiconductor I class superlattice, first medium rete 3 is as potential well, second medium rete 4 is as potential barrier, and metal interdigital electrode 5 forms Schottky contacts with two-dimensional crystal lattice 2.
Described first medium film material is GaN.Described second medium film material is AlN.The interdigital electrode material of described metal is titanium/gold (Ti/Au).
The length of described interdigital electrode 5 is 300 μ m, and width is 6 μ m, and the spacing of interdigital electrode 5 is 6 μ m.
The manufacture method of the single wavelength MSM of the described ultraviolet based on two-dimensional crystal lattice of the present embodiment photodetector is as follows:
1) adopt edge [0001] the direction epitaxial growth on the foreign substrate sapphire of gas phase epitaxy of metal organic compound (MOVPE) technology.In growth course, adopt trimethyl gallium (TMG), trimethyl aluminium (TMA) as the III clan source, high-purity ammon (NH
3) as group V source, high-purity hydrogen (H
2) as carrier gas;
2) high temperature epitaxy AlN hypothallus on the described foreign substrate as step 1), thickness is about 1 μ m;
3) as step 2) first medium rete GaN and the second medium rete in some cycles of alternately growing on described AlN host material, first medium rete GaN and second medium rete AlN form potential well and potential barrier, form two-dimensional crystal lattice.By controlling TMG, TMA and NH
3flow and epitaxial growth time, regulate the thickness of two-dimensional crystal lattice first medium rete GaN and second medium rete AlN.(thickness of the single atomic layer of GaN is 2 atomic layers of thickness extension of first medium rete GaN potential well layer
).The growth step in each cycle of two-dimensional crystal lattice is:
The potential well of the band gap of a. growing relative narrower, i.e. first medium rete GaN;
B. the potential barrier that the band gap of growing is relatively wide, i.e. second medium rete AlN;
C. finish the growth of one-period, extension enters circulation next time.
4) adopt the process of standard on the described two-dimensional crystal lattice as step 3), adopt photoetching (Karlsuss MA6/BA6), electron beam evaporation (Temescal FC2000) and lift-off technology to prepare the Ti/Au metal interdigital electrode of 10nm/200nm.The length of interdigital electrode is 300 μ m, and width is 6 μ m, and interdigital spacing is 6 μ m.
5) step 4) is prepared to device rapid thermal annealing 300s in 400 ℃ of nitrogen atmospheres of metal interdigital electrode, make metal interdigital electrode and two-dimensional crystal lattice form Schottky contacts, thereby make the single wavelength MSM of the described ultraviolet based on two-dimensional crystal lattice of the present embodiment photodetector.
The single wavelength MSM of the described ultraviolet based on two-dimensional crystal lattice of the present embodiment photodetector is tested by following experimental provision.Its dark current, photoelectric current and spectral response are tested by Keithley2410 type power meter and Keithley6514 type electrometer.Adopting the xenon lamp of 450W as light source, is the one side incident of metal interdigital electrode from MSM photodetector front.As shown in Figure 2, the response wave length of detector is positioned near 250nm, and during additional 3V voltage, the halfwidth of response peak is about 278meV, has realized the detection to single deep ultraviolet wavelength light signal.As seen from Figure 2, the response light electric current increases with the increase of applying bias voltage.
Show that by the present embodiment the single wavelength MSM of a kind of ultraviolet based on two-dimensional crystal lattice of the present invention photodetector can be realized the unicity of deep ultraviolet regionally detecting wavelength.And by changing the thickness of potential well first medium rete, can be poor between the regulation and control quantum level, can realize the detection to the different single wavelength light signals in deep ultraviolet zone.
Claims (10)
1. the single wavelength MSM of the ultraviolet based on a two-dimensional crystal lattice photodetector, is characterized in that the two-dimensional crystal lattice and the metal interdigital electrode that comprise substrate, have quantum level;
Described two-dimensional crystal lattice is alternately growth on substrate, and the cycle of alternating growth is at least 20; The two-dimensional crystal lattice in each alternating growth cycle is formed by first medium rete and second medium rete, the forbidden band of first medium rete is dropped in the forbidden band of second medium rete, become semiconductor I class superlattice, the first medium rete is as potential well, the second medium rete is as potential barrier, and metal interdigital electrode and two-dimensional crystal lattice form Schottky contacts.
2. the single wavelength MSM of a kind of ultraviolet based on two-dimensional crystal lattice as claimed in claim 1 photodetector, is characterized in that described substrate is homo-substrate or foreign substrate.
3. the single wavelength MSM of a kind of ultraviolet based on two-dimensional crystal lattice as claimed in claim 2 photodetector, is characterized in that described homo-substrate is gallium nitride or aluminum-nitride single crystal.
4. the single wavelength MSM of a kind of ultraviolet based on two-dimensional crystal lattice as claimed in claim 2 photodetector, is characterized in that described foreign substrate is sapphire or carborundum.
5. the single wavelength MSM of a kind of ultraviolet based on two-dimensional crystal lattice as claimed in claim 1 photodetector, the cycle that it is characterized in that described alternating growth is 20～200.
6. the single wavelength MSM of a kind of ultraviolet based on two-dimensional crystal lattice as claimed in claim 5 photodetector, the cycle that it is characterized in that described alternating growth is 80～110.
7. the single wavelength MSM of a kind of ultraviolet based on two-dimensional crystal lattice as claimed in claim 1 photodetector, is characterized in that described first medium rete is gallium nitride single crystal or aluminum gallium nitride mixed crystal.
8. the single wavelength MSM of a kind of ultraviolet based on two-dimensional crystal lattice as claimed in claim 1 photodetector, is characterized in that described second medium rete is aluminum-nitride single crystal or aluminum gallium nitride mixed crystal.
9. the single wavelength MSM of a kind of ultraviolet based on two-dimensional crystal lattice as claimed in claim 1 photodetector, is characterized in that described metal interdigital electrode is titanium/gold, nickel/gold or titanium/platinum/gold combination.
10. the single wavelength MSM of a kind of ultraviolet based on two-dimensional crystal lattice as claimed in claim 1 photodetector, is characterized in that described foreign substrate surface epitaxial growth has the AlN hypothallus, and AlN hypothallus thickness is 100nm～1 μ m, and the AlN hypothallus is as resilient coating.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108428763A (en) * | 2018-04-18 | 2018-08-21 | 厦门大学 | A kind of stress regulation and control ultraviolet multi-wavelength MSM photoelectric detector and preparation method thereof |
| CN108878547A (en) * | 2018-07-02 | 2018-11-23 | 厦门大学 | A kind of deep ultraviolet MSM photoelectric detector of high external quantum efficiency |
| CN109285910A (en) * | 2018-08-09 | 2019-01-29 | 西安电子科技大学 | Based on (AlxGa1-x)2O3The UV photodetector and preparation method thereof of material MSM structure |
| CN109301002A (en) * | 2018-08-09 | 2019-02-01 | 西安电子科技大学 | Based on (AlxGa1-x)2O3The UV photodetector and preparation method thereof of material MSM structure |
| CN109326680A (en) * | 2018-08-09 | 2019-02-12 | 西安电子科技大学 | Based on (AlxGa1-x)2O3Two stage ultraviolet electric explorer of material and preparation method thereof |
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| CN1696670A (en) * | 2005-06-14 | 2005-11-16 | 中国科学院上海技术物理研究所 | Ultraviolet-infrared bichromatic integrated detector based on gallium nitride |
| US20130020491A1 (en) * | 2011-07-19 | 2013-01-24 | Stmicroelectronics S.R.L. | Photodetector device with protective and antireflective cover, and manufacturing method thereof |
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2013
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Patent Citations (2)
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| CN1696670A (en) * | 2005-06-14 | 2005-11-16 | 中国科学院上海技术物理研究所 | Ultraviolet-infrared bichromatic integrated detector based on gallium nitride |
| US20130020491A1 (en) * | 2011-07-19 | 2013-01-24 | Stmicroelectronics S.R.L. | Photodetector device with protective and antireflective cover, and manufacturing method thereof |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108428763A (en) * | 2018-04-18 | 2018-08-21 | 厦门大学 | A kind of stress regulation and control ultraviolet multi-wavelength MSM photoelectric detector and preparation method thereof |
| CN108878547A (en) * | 2018-07-02 | 2018-11-23 | 厦门大学 | A kind of deep ultraviolet MSM photoelectric detector of high external quantum efficiency |
| CN109285910A (en) * | 2018-08-09 | 2019-01-29 | 西安电子科技大学 | Based on (AlxGa1-x)2O3The UV photodetector and preparation method thereof of material MSM structure |
| CN109301002A (en) * | 2018-08-09 | 2019-02-01 | 西安电子科技大学 | Based on (AlxGa1-x)2O3The UV photodetector and preparation method thereof of material MSM structure |
| CN109326680A (en) * | 2018-08-09 | 2019-02-12 | 西安电子科技大学 | Based on (AlxGa1-x)2O3Two stage ultraviolet electric explorer of material and preparation method thereof |
| CN109285910B (en) * | 2018-08-09 | 2020-06-19 | 西安电子科技大学 | Based on (Al)xGa1-x)2O3Ultraviolet photoelectric detector of material MSM structure and preparation method thereof |
| CN109326680B (en) * | 2018-08-09 | 2020-06-19 | 西安电子科技大学 | Based on (Al)xGa1-x)2O3Dual-band ultraviolet photoelectric detector of material and preparation method thereof |
| CN109301002B (en) * | 2018-08-09 | 2020-06-19 | 西安电子科技大学 | Based on (Al)xGa1-x)2O3Ultraviolet photoelectric detector of material MSM structure and preparation method thereof |
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