CN103474503B - A kind of ultraviolet single-wavelength MSM photoelectric detector based on two-dimensional crystal lattice - Google Patents
A kind of ultraviolet single-wavelength MSM photoelectric detector based on two-dimensional crystal lattice Download PDFInfo
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Abstract
Based on a ultraviolet single-wavelength MSM photoelectric detector for two-dimensional crystal lattice, belong to semiconductor photoelectronic device technical field.There is provided a kind of utilize quantum limitation effect to realize controllable Single wavelength and more easily play the ultraviolet single-wavelength MSM photoelectric detector based on two-dimensional crystal lattice of the quantum level density of states this advantage high.Comprise substrate, there is the two-dimensional crystal lattice of quantum level and metal interdigital electrode; Described two-dimensional crystal lattice alternating growth on substrate, the cycle of alternating growth is at least 20; The two-dimensional crystal lattice in each alternating growth cycle is formed by first medium rete and second medium rete, the forbidden band of first medium rete is dropped in the forbidden band of second medium rete, become semiconductor I class superlattice, first medium rete is as potential well, second medium rete is as potential barrier, and metal interdigital electrode and two-dimensional crystal lattice form Schottky contacts.
Description
Technical field
The invention belongs to semiconductor photoelectronic device technical field, relate to a kind of metal-semiconductor-metal (MSM) photodetector, particularly relate to a kind of ultraviolet single-wavelength MSM photoelectric detector based on two-dimensional crystal lattice.
Background technology
Ultraviolet detection technology has broad application prospects in military and civilian field.It is at military aspect, can be used for missile guidance, missile warning, ultraviolet communication etc.; In civilian, can be used for fire defector, environmental monitoring, biological medicine analysis etc., become in recent years one of study hotspot of detecting technique in the world.The structure of the solid state detector that ultraviolet detection technology is common comprises the structures such as metal-semiconductor-metal (MSM), photoconduction, p-i-n type.By contrast, MSM structure rely on little, the plane of electric capacity, simple without the need to doping, preparation technology, be convenient to the plurality of advantages such as monolithic optoelectronic integration and enjoy favor.
Current, people develop day blind ultraviolet 200 ~ 280nm wave band MSM photoelectric detector mainly based on the direct wide band gap semiconducter of III group-III nitride.The ternary mixed crystal Al be wherein made up of GaN and AlN
xga
1-xn material energy gap can regulate and control to 6.2eV from 3.4eV with Al component, and corresponding absorption band edge changes to 200nm from 365nm serially, is therefore regarded as the ideal material making day-old chick ultraviolet detector.But, conventional Al
xga
1-xn base semiconductor UV photodetector is shorter than for wavelength the ultraviolet light absorbing band edge all can respond (A.Knigge; et.al; " AlGaNphotodetectorsfortheUV-Cspectralregiononplanarandep itaxiallaterallyovergrownAlN/sapphiretemplates; " PhysicaStatusSolidi (C); vol.10; no.3, pp.294-297, Mar.2013.; F.Xie, et.al, " Large-areasolar-blindAlGaN-basedMSMphotodetectorswithult ra-lowdarkcurrent; " ElectronicsLetters, vol.47, no.16, p.930,2011.) and to the ultraviolet signal of specific wavelength in this response range not tool differentiate and detectivity, constrain the application of semiconductor ultraviolet electric explorer; On the other hand, due to high Al contents Al
xga
1-xn(x>0.4) thin film epitaxial growth technology is still immature, film defects density high (Y.-L.Tsai, the et.al, " ObservationofcompositionalpullingphenomenoninAl of growth
xga
1-xn (0.4<x<1.0) filmsgrownon (0001) sapphiresubstrates, " AppliedPhysicsLetters, vol.82, no.1, p.31, and 2003.), govern Al
xga
1-xn base ultraviolet light electric explorer is toward the development in short wavelength direction.
Recently, increasing concern is received based on two-dimensional crystal lattice material development novel photoelectric-detection device.Two-dimensional crystal lattice refers to a kind of two-dimensional material only having single or several atomic layer level thickness, its electronic structure is discrete quantum state, and Effective band gap is wider than its body material energy gap, the UV photodetector therefore based on two-dimensional crystal lattice material will be conducive to overcoming conventional Al
xga
1-xthe problems referred to above that N base photodetector exists, bring new opportunity for researching and developing novel solar blind UV electric explorer.
Summary of the invention
Object of the present invention is intended to overcome current Al
xga
1-xthe deficiency of N base ultraviolet MSM photoelectric detector, provides a kind of and utilizes quantum limitation effect to realize controllable Single wavelength and more easily play the ultraviolet single-wavelength MSM photoelectric detector based on two-dimensional crystal lattice of the quantum level density of states this advantage high.
The present invention includes substrate, there is the two-dimensional crystal lattice of quantum level and metal interdigital electrode;
Described two-dimensional crystal lattice alternating growth on substrate, the cycle of alternating growth is at least 20; The two-dimensional crystal lattice in each alternating growth cycle is formed by first medium rete and second medium rete, the forbidden band of first medium rete is dropped in the forbidden band of second medium rete, become semiconductor I class superlattice, first medium rete is as potential well, second medium rete is as potential barrier, and metal interdigital electrode and two-dimensional crystal lattice form Schottky contacts.
Described substrate can be homo-substrate or foreign substrate; Described homo-substrate can be gallium nitride or aluminum-nitride single crystal etc.; Described foreign substrate can be sapphire or carborundum etc.
The cycle of described alternating growth can be 20 ~ 200; Preferably 80 ~ 110.
Described first medium rete can be gallium nitride single crystal or aluminum gallium nitride mixed crystal etc.
Described second medium rete can be aluminum-nitride single crystal or aluminum gallium nitride mixed crystal etc.
Described metal interdigital electrode can be titanium/gold, nickel/gold or titanium/platinum/gold combination etc.
There is AlN hypothallus on described foreign substrate surface preferably epitaxial growth, and AlN hypothallus thickness can be 100nm ~ 1 μm.AlN hypothallus is as resilient coating.AlN hypothallus can discharge stress, reduces the lattice mismatch of Sapphire Substrate and two-dimensional crystal lattice material, guarantees the good quality of crystal growth.
Compared with the prior art, beneficial effect of the present invention is as follows:
1, a kind of ultraviolet single-wavelength MSM photoelectric detector based on two-dimensional crystal lattice of the present invention, introduces two-dimensional crystal lattice.By epitaxial growth first medium rete and second medium rete, form two-dimensional crystal lattice.The forbidden band of first medium rete is dropped in the forbidden band of second medium rete completely.Because first medium thicknesses of layers is only single or several atomic layer, form the two-dimensional crystal lattice of first medium rete.At this moment, charge carrier is restricted along moving of two-dimensional crystal lattice normal direction, forms discrete quantum level, but not the continuous energy band under the corresponding body materials behavior of first medium rete.When there being UV-irradiation, hole quantum level being excited after electronics absorb photons energy and transitting to electronics quantum level, form electron hole pair.Under applying bias voltage effect, electronics, hole form photoelectric current respectively to positive and negative electrode drift.Therefore, the present invention introduces the two-dimensional crystal lattice with quantum level, is conducive to the detection realizing single wavelength.
2, a kind of ultraviolet single-wavelength MSM photoelectric detector based on two-dimensional crystal lattice of the present invention, by changing the thickness of potential well first medium rete, can be poor between regulation and control quantum level, the photodetector of different Single wavelength can be designed.And narrow (fixing build thick situation under) along with potential well layer, can differ from increasing energy gap under first medium rete correspondence body materials behavior between electronics and hole quantum level, response wave length moves to shortwave direction, is conducive to the detection realizing deep UV (ultraviolet light).
3, a kind of ultraviolet single-wavelength MSM photoelectric detector based on two-dimensional crystal lattice of the present invention, two-dimensional crystal lattice is controlled by potential barrier at the Electronic Transport Properties perpendicular to heterogeneous interface direction.Here quantum tunneling effect plays dominating role.The present invention builds thick by controlling second medium rete, forms charge carrier tunnelling between quantum level, strengthens between adjacent potential well and be coupled, be beneficial to charge carrier transporting in vertical two-dimensional crystal lattice z direction.Although the quantum level density of states is high, because every layer of two-dimensional crystal lattice thickness is thin, the ultraviolet light that can absorb is limited, and what the photoelectric current only according to the response of one deck two-dimensional crystal lattice was more traditional is substrate with body material, and MSM photoelectric detector is more weak.Photodetector of the present invention, by the quantum tunneling of two-dimensional crystal lattice interlayer, more easily plays the high advantage of the quantum level density of states, to obtain higher quantum efficiency and responsiveness.
Accompanying drawing explanation
Fig. 1 is the structural representation (before encapsulation) of the embodiment of the present invention.In FIG, respectively expression is marked: 1. substrate; 2. the two-dimensional crystal lattice of one-period; 3. first medium rete; 4. second medium rete; 5. metal interdigital electrode; 6. resilient coating.
Fig. 2 is the response light electric current spectral line of the embodiment of the present invention.In fig. 2, abscissa represents wavelength (nm), and ordinate represents photoelectric current (A).
Embodiment
Below in conjunction with drawings and Examples, the present invention is further illustrated.
The present invention includes substrate 1, resilient coating 6, the two-dimensional crystal lattice 2(with quantum level in multiple cycle of alternating growth be on substrate 1 made up of first medium rete 3 and second medium rete 4) and metal interdigital electrode 5.
Substrate 1 is sapphire (foreign substrate), and described sapphire surface epitaxial growth has AlN hypothallus, and AlN hypothallus thickness can be 100nm ~ 1 μm.AlN hypothallus is as resilient coating 6.AlN hypothallus can discharge stress, reduces the lattice mismatch of Sapphire Substrate and two-dimensional crystal lattice material, guarantees the good quality of crystal growth.The two-dimensional crystal lattice 2 in each alternating growth cycle is formed by first medium rete 3 and second medium rete 4, the forbidden band of first medium rete 3 is dropped in the forbidden band of second medium rete 4 completely, become semiconductor I class superlattice, first medium rete 3 is as potential well, second medium rete 4 is as potential barrier, and metal interdigital electrode 5 and two-dimensional crystal lattice 2 form Schottky contacts.
Described first medium film material is GaN.Described second medium film material is AlN.The interdigital electrode material of described metal is titanium/gold (Ti/Au).
The length of described interdigital electrode 5 is 300 μm, and width is 6 μm, and the spacing of interdigital electrode 5 is 6 μm.
The manufacture method of the ultraviolet single-wavelength MSM photoelectric detector based on two-dimensional crystal lattice described in the present embodiment is as follows:
1) gas phase epitaxy of metal organic compound (MOVPE) technology is adopted on foreign substrate sapphire along [0001] direction epitaxial growth.Adopt trimethyl gallium (TMG), trimethyl aluminium (TMA) as III source in growth course, high-purity ammon (NH
3) as group V source, high-purity hydrogen (H
2) as carrier gas;
2) high temperature epitaxy AlN hypothallus in the foreign substrate as described in step 1), thickness is about 1 μm;
3) as step 2) as described in AlN host material on the first medium rete GaN in alternating growth some cycles and second medium rete, first medium rete GaN and second medium rete AlN forms potential well and potential barrier, namely forms two-dimensional crystal lattice.By control TMG, TMA and NH
3flow and the epitaxial growth time, regulate the thickness of two-dimensional crystal lattice first medium rete GaN and second medium rete AlN.(thickness of the single atomic layer of GaN is thickness-extensional 2 atomic layers of first medium rete GaN potential well layer
).The growth step in two-dimensional crystal lattice each cycle is:
A. the potential well of band gap relative narrower is grown, i.e. first medium rete GaN;
B. the relatively wide potential barrier of band gap is grown, i.e. second medium rete AlN;
C. terminate the growth of one-period, extension enters and circulates next time.
4) on the two-dimensional crystal lattice as described in step 3), adopt the process of standard, adopt photoetching (KarlsussMA6/BA6), electron beam evaporation (TemescalFC2000) and lift-off technology to prepare the Ti/Au metal interdigital electrode of 10nm/200nm.The length of interdigital electrode is 300 μm, and width is 6 μm, and interdigital spacing is 6 μm.
5) step 4) is prepared device rapid thermal annealing 300s in 400 DEG C of nitrogen atmospheres of metal interdigital electrode, make metal interdigital electrode and two-dimensional crystal lattice form Schottky contacts, thus make the ultraviolet single-wavelength MSM photoelectric detector based on two-dimensional crystal lattice described in the present embodiment.
The ultraviolet single-wavelength MSM photoelectric detector based on two-dimensional crystal lattice described in the present embodiment is tested by following experimental provision.Its dark current, photoelectric current and spectral response are tested by Keithley2410 type power meter and Keithley6514 type electrometer.Adopt the xenon lamp of 450W as light source, from MSM photoelectric detector front and the incidence of metal interdigital electrode side.As shown in Figure 2, the response wave length of detector is positioned near 250nm, and during additional 3V voltage, the halfwidth of response peak is about 278meV, achieves the detection to single deep ultraviolet wavelength channels.As seen from Figure 2, response light electric current increases with the increase of applying bias voltage.
Shown by the present embodiment, a kind of ultraviolet single-wavelength MSM photoelectric detector based on two-dimensional crystal lattice of the present invention, can realize the unicity of deep ultraviolet regionally detecting wavelength.And by changing the thickness of potential well first medium rete, can be poor between regulation and control quantum level, the detection to the different Single wavelength light signal in deep ultraviolet region can be realized.
Claims (10)
1. based on a ultraviolet single-wavelength MSM photoelectric detector for two-dimensional crystal lattice, the two-dimensional crystal lattice that it is characterized in that comprising substrate, there is quantum level and metal interdigital electrode;
Described two-dimensional crystal lattice alternating growth on substrate, the cycle of alternating growth is at least 20; The two-dimensional crystal lattice in each alternating growth cycle is formed by first medium rete and second medium rete, the forbidden band of first medium rete is dropped in the forbidden band of second medium rete, become semiconductor I class superlattice, first medium rete is as potential well, second medium rete is as potential barrier, and metal interdigital electrode and two-dimensional crystal lattice form Schottky contacts.
2. a kind of ultraviolet single-wavelength MSM photoelectric detector based on two-dimensional crystal lattice as claimed in claim 1, is characterized in that described substrate is homo-substrate or foreign substrate.
3. a kind of ultraviolet single-wavelength MSM photoelectric detector based on two-dimensional crystal lattice as claimed in claim 2, is characterized in that described homo-substrate is gallium nitride or aluminum-nitride single crystal.
4. a kind of ultraviolet single-wavelength MSM photoelectric detector based on two-dimensional crystal lattice as claimed in claim 2, is characterized in that described foreign substrate is sapphire or carborundum.
5. a kind of ultraviolet single-wavelength MSM photoelectric detector based on two-dimensional crystal lattice as claimed in claim 1, is characterized in that the cycle of described alternating growth is 20 ~ 200.
6. a kind of ultraviolet single-wavelength MSM photoelectric detector based on two-dimensional crystal lattice as claimed in claim 5, is characterized in that the cycle of described alternating growth is 80 ~ 110.
7. a kind of ultraviolet single-wavelength MSM photoelectric detector based on two-dimensional crystal lattice as claimed in claim 1, is characterized in that described first medium rete is gallium nitride single crystal or aluminum gallium nitride mixed crystal.
8. a kind of ultraviolet single-wavelength MSM photoelectric detector based on two-dimensional crystal lattice as claimed in claim 1, is characterized in that described second medium rete is aluminum-nitride single crystal or aluminum gallium nitride mixed crystal.
9. a kind of ultraviolet single-wavelength MSM photoelectric detector based on two-dimensional crystal lattice as claimed in claim 1, is characterized in that described metal interdigital electrode is titanium/gold, nickel/gold or titanium/platinum/gold combination.
10. a kind of ultraviolet single-wavelength MSM photoelectric detector based on two-dimensional crystal lattice as claimed in claim 2, it is characterized in that described foreign substrate surface epitaxial growth has AlN hypothallus, AlN hypothallus thickness is 100nm ~ 1 μm, and AlN hypothallus is as resilient coating.
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| CN108428763B (en) * | 2018-04-18 | 2024-06-04 | 厦门大学 | Stress-regulation ultraviolet multi-wavelength MSM photoelectric detector and preparation method thereof |
| CN108878547B (en) * | 2018-07-02 | 2019-10-22 | 厦门大学 | Deep ultraviolet MSM photoelectric detector based on nano-pore configuration super short period superlattices |
| CN109301002B (en) * | 2018-08-09 | 2020-06-19 | 西安电子科技大学 | Based on (Al)xGa1-x)2O3Ultraviolet photoelectric detector of material MSM structure and preparation method thereof |
| CN109285910B (en) * | 2018-08-09 | 2020-06-19 | 西安电子科技大学 | Based on (Al)xGa1-x)2O3Ultraviolet photoelectric detector of material MSM structure and preparation method thereof |
| CN109326680B (en) * | 2018-08-09 | 2020-06-19 | 西安电子科技大学 | Based on (Al)xGa1-x)2O3Dual-band ultraviolet photoelectric detector of material and preparation method thereof |
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