CN107342344B - A kind of ultraviolet avalanche probe and preparation method thereof - Google Patents
A kind of ultraviolet avalanche probe and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1856—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising nitride compounds, e.g. GaN
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The invention discloses a kind of ultraviolet avalanche probe and preparation method thereof, it successively includes: p-type layer, the photosensitive absorbed layer of i type, p-type transition zone, i type avalanche layer, n-layer from substrate which is nipip structure from bottom to top；It is provided with N-shaped Ohmic electrode in the n-layer, p-type Ohmic electrode is provided in the p-type layer；The p-type layer is to receive the substrate that substrate described in the structure sheaf of incident light is light-permeable.Since the present invention provides a kind of new nipip structure, transparent material is set by substrate, therefore ultraviolet light can carry out detection operations across substrate from back incidence.It is subsequent when being integrated, when detector array is connect with reading circuit thereon by indium column, have no effect on the detection operations of ultraviolet light.
Description
Technical field
The present invention relates to semiconductor probe technologies more particularly to ultraviolet avalanche probe and preparation method thereof.
Background technique
Ultraviolet light is mostly derived from solar radiation, and Ozone in Atmosphere molecule is that 200~280nm ultraviolet light has strong absorption to wavelength
Effect, therefore be approximately zero in the ultraviolet radioactive of the adjacent ground surface wave band, i.e. " day is blind " area.And wavelength is the purple of 280~400nm
It after external radiation then penetrates atmosphere, is uniformly distributed in earth's surface, i.e. " visible blind " area.Ultraviolet detection technology operates mainly in 200~
400nm wave band plays more important role in military field, scientific research field and civil field.For example, in military field
It can be applied to Missile Plume detection and flight guidance；Chemical analysis, bioanalysis and astronomy are mainly used in scientific research field
Learn research etc.；Civil field be mainly used in optic communication and in terms of.
Existing ultraviolet detection technology is broadly divided into two classes, and one kind is the vacuum photomultiplier tube (PMT) based on photocathode,
Another kind of is all solid state detector based on semiconductor technology.Wherein, PMT has the advantages that high sensitivity, noise are low, but because of it
Volume is big, frangible and be difficult to integrate, and is restricted its development.Develop the spy of more mature silicon (Si) base in semiconductor detector
Device is surveyed, high sensitivity, integrated level are high, but because it is low-gap semiconductor, and work can largely decline in ultraviolet band
Subtract its service life.In recent years, with the research to semiconductor material with wide forbidden band, gallium nitrogen (GaN) base ultraviolet detector constantly has
New breakthrough.For example, this architecture provides a kind of high we have proposed a kind of GaN/AlN superlattices avalanche probe (APD)
Platform is amplified in sensitive snowslide, has many advantages, such as high-gain, low noise.
Fig. 1 is a kind of basic structure schematic diagram of ultraviolet avalanche probe in the prior art.As shown in Figure 1, this detection
Device can be pipin structure, and 1st area is p floor, and 2nd area are i floor, and 3rd area are p floor, and 4th area are i floor, and 5th area are n-layer.Wherein, 1st area and 5th area
Pn-junction is constituted, is a kind of basic structure of semiconductor devices.2nd area are absorbed layer, and it is wide higher than its forbidden band to be mainly used for absorption energy
The energy of the photon of degree, to generate electron hole pair.3rd area are transition zone, are mainly used for electric field controls.4th area are avalanche region, main
It is used for Ionized by Electrons collision, achievees the effect that snowslide.In practical application, ultraviolet avalanche probe further includes substrate, buffer layer
And electrode.When ultraviolet avalanche probe detects ultraviolet light, electric current can be generated, and by the electrode at both ends by electric signal transmission
It goes out, achievees the purpose that detection.
Although the ultraviolet avalanche probe of the prior art can successfully detect ultraviolet light, it is difficult in practical application
In integrated with reading circuit.As shown in Fig. 2, ultraviolet avalanche probe array is made of several detectors as shown in Figure 1,
And it is connected by indium column and reading circuit (ROIC, Read Out Inlegrated Circuit).Problem is, reading circuit
For silicon-based electronic circuits chip, itself is opaque.Therefore, when the ultraviolet light normal incidence for needing to detect, reading circuit plate can make it
At blocking, to can not normally be detected.
Summary of the invention
In view of this, guaranteeing just the purpose of the present invention is to provide a kind of ultraviolet avalanche probe and preparation method thereof
In the case where normal detection operations, it can also avoid the problem that being blocked when integrated by reading circuit plate.
In order to achieve the above objectives, technical solution provided by the invention is as follows:
A kind of ultraviolet avalanche probe, which is characterized in that the detector is nipip structure, from bottom to top successively from substrate
Include:
P-type layer, the photosensitive absorbed layer of i type, p-type transition zone, i type avalanche layer, n-layer；
It is provided with N-shaped Ohmic electrode in the n-layer, p-type Ohmic electrode is provided in the p-type layer；
The p-type layer is the structure sheaf for receiving incident light；
The substrate is the substrate of light-permeable.
Further, the material of the p-type layer is AlxGa1-xN, wherein 0≤x≤1；
The material of the photosensitive absorbed layer of i type is AlyGa1-yN, wherein 0≤y≤1；
The material of the p-type transition zone is AlzGa1-zN, wherein 0≤z≤1.
The material of the n-layer is AlwGa1-wN, wherein 0≤w≤1.
Further, the material of the i type avalanche layer includes AluGa1-uN and AltGa1-tN, 0≤u≤1,0≤t≤1；
The AluGa1-uN and AltGa1-tTwo kinds of material periodicities of N are arranged alternately, wherein the AluGa1-uN is potential well
Layer, positioned at the lowest level of a cycle, close to the p-type transition zone；The AltGa1-tN is barrier layer, positioned at a cycle
Top layer, close to the n-layer；
The AluGa1-uThe forbidden bandwidth of N is less than AltGa1-tThe forbidden bandwidth of N.
Further, the AluGa1-uN and AltGa1-tIt further include stress regulating course Al between NvGa1-vN, wherein 0≤u
≤v≤t≤1；The stress regulating course AlvGa1-vThe forbidden bandwidth of N is less than the AltGa1-tThe forbidden bandwidth of N, and it is greater than institute
State AluGa1-uThe forbidden bandwidth of N.
Further, the stress regulating course is with a thickness of D (D > 0), stress regulating course AlvGa1-vComponent v is variable, u in N
≤ v≤t, the positional distance current period lower surface distance in stress regulating course where the component is d (0≤d≤D), then d is from 0
When being incremented to D, v increases to t from u, and component v is greater than 0 with the first derivative of the variation function of distance d.
The present invention also provides a kind of preparation methods of ultraviolet avalanche probe, are suitable for above-mentioned detector, this method comprises:
One layer of p-type layer is grown on the basis of substrate；
One layer of photosensitive absorbed layer of i type is grown in the p-type layer；
One layer of p-type transition zone is grown on the photosensitive absorbed layer of i type；
One layer of i type avalanche layer is grown on the p-type transition zone；
One layer of n-layer is grown on the i type avalanche layer；
It is provided with N-shaped Ohmic electrode in the n-layer, p-type Ohmic electrode is provided in p-type layer；The p-type layer is to receive
The structure sheaf of incident light；The substrate is the substrate of light-permeable.
Further, the material of the p-type layer is AlxGa1-xN, wherein 0≤x≤1；
The material of the photosensitive absorbed layer of i type is AlyGa1-yN, wherein 0≤y≤1；
The material of the p-type transition zone is AlzGa1-zN, wherein 0≤z≤1；
The material of the n-layer is AlwGa1-wN, wherein 0≤w≤1.
Further, the material of the i type avalanche layer includes AluGa1-uN and AltGa1-tN, 0≤u≤1,0≤t≤1；
The AluGa1-uN and AltGa1-tTwo kinds of material periodicities of N are arranged alternately, wherein the AluGa1-uN is potential well
Layer, positioned at the lowest level of a cycle, close to the p-type transition zone；The AltGa1-tN is barrier layer, positioned at a cycle
Top layer, close to the n-layer；
The AluGa1-uThe forbidden bandwidth of N is less than AltGa1-tThe forbidden bandwidth of N.
Further, the AluGa1-uN and AltGa1-tIt further include stress regulating course Al between NvGa1-vN, wherein 0≤u
≤v≤t≤1；The stress regulating course AlvGa1-vThe forbidden bandwidth of N is less than the AltGa1-tThe forbidden bandwidth of N is greater than described
AluGa1-uThe forbidden bandwidth of N.
Further, the stress regulating course is with a thickness of D (D > 0), stress regulating course AlvGa1-vComponent v is variable, u in N
≤ v≤t, the positional distance current period lower surface distance in stress regulating course where the component is d (0≤d≤D), then d is from 0
When being incremented to D, v increases to t from u, and component v is greater than 0 with the first derivative of the variation function of thickness d.
It is a kind of new due to providing it can be seen that a kind of ultraviolet avalanche probe provided by the invention and preparation method thereof
Nipip structure, and transparent material is set by substrate, therefore, ultraviolet light can be visited from back incidence across substrate
Survey work.It is subsequent when being integrated, when detector array is connect with reading circuit thereon by indium column, have no effect on ultraviolet
The detection operations of light.
Detailed description of the invention
Fig. 1 is a kind of basic structure schematic diagram of ultraviolet avalanche probe in the prior art.
Fig. 2 is that existing ultraviolet avalanche probe integrates situation schematic diagram.
Fig. 3 is the preparation method flow chart of the ultraviolet avalanche probe of the embodiment of the present invention one.
Fig. 4 is the structural schematic diagram of ultraviolet avalanche probe in the embodiment of the present invention one.
Fig. 5 is the schematic diagram that situation is integrated using the ultraviolet avalanche probe of the present invention program.
Fig. 6 is i type avalanche layer schematic diagram of internal structure in the ultraviolet avalanche probe of the prior art.
Fig. 7 is existing i type avalanche layer energy band diagram.
Fig. 8 is inside existing i type avalanche layer by the structure chart of infiltration.
Fig. 9 is the new i type avalanche layer internal structure chart designed in the embodiment of the present invention two.
Figure 10 is a kind of specific embodiment of the new i type avalanche layer of the embodiment of the present invention two.
Figure 11 is a kind of energy band diagram of specific implementation of the new i type avalanche layer of the embodiment of the present invention two.
Figure 12 is the method flow diagram of the embodiment of the present invention three.
Figure 13 is ultraviolet avalanche probe structural schematic diagram prepared by the embodiment of the present invention three.
Figure 14 is the method flow diagram of the embodiment of the present invention four.
Figure 15 is ultraviolet avalanche probe structural schematic diagram prepared by the embodiment of the present invention four.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention more comprehensible, develop simultaneously embodiment with reference to the accompanying drawings, right
The present invention is described in further detail.
The embodiment of the present invention provides a kind of new ultraviolet avalanche probe.The detector has redesigned structure, so that needing
The light to be detected can be from the back incidence of one side of substrate, and at the same time achieving the effect that detection.Using such detector into
It, can be to avoid reading circuit to the occlusion issue of light when row is integrated.
Fig. 3 is the preparation method flow chart of the ultraviolet avalanche probe of this implementation one.As shown in figure 3, the preparation method packet
It includes:
Step 301 grows one layer of p-type layer on the basis of substrate.It certainly, in practical applications would generally Mr. on substrate
Long one layer of buffer layer, this is well known to those skilled in the art technology, in the present invention without especially emphasizing.
Step 302 grows one layer of photosensitive absorbed layer of i type in the p-type layer.
Step 303 grows one layer of p-type transition zone on the photosensitive absorbed layer of i type.
Step 304 grows one layer of i type avalanche layer on the p-type transition zone.
Step 305 grows one layer of n-layer on the i type avalanche layer.
Fig. 4 is the structural schematic diagram for the ultraviolet avalanche probe prepared according to the above method.As shown in figure 4, the detection
Device is nipip structure, from bottom to top successively includes: p-type layer, low temperature buffer layer, the photosensitive absorbed layer of i type, p-type transition from substrate
Layer, i type avalanche layer, n-layer.One layer of buffer layer is had in practical application, on substrate, is provided with N-shaped Ohmic electrode, p in n-layer
P-type Ohmic electrode is provided on type layer.Wherein, p-type layer and n-layer constitute pn-junction, are the most bases that semiconductor has electric conductivity
This structure.The photosensitive absorbed layer of i type is mainly used for absorbing the energy for the photon that energy is higher than its forbidden bandwidth, generates electron hole
It is right.P-type transition zone, is mainly used for electric field controls.I type avalanche layer is mainly used for Ionized by Electrons collision, achievees the effect that snowslide.
It should be noted that the substrate in the embodiment of the present invention one is the substrate of light-permeable, and p-type layer is to receive incidence
The structure sheaf of light.The incident light described here that receives is meant that, in this nipip structure, p-type layer is to enter to come at first
Structure sheaf.That is, detected ultraviolet light will pass through substrate directive detector, i.e. this hair in the embodiment of the present invention one
Bright " back incident-type ".UV light permeability substrate, buffer layer and p-type layer are irradiated to the photosensitive absorbed layer of i type.The photosensitive suction of i type
Receive layer generate under action of ultraviolet light, electron hole pair will be generated, electronics is transported to n-type electrode direction, by p-type transition zone into
Enter i type avalanche layer, the hole of generation is transported to p-type electrode direction.Snowslide is electronically activated in i type avalanche layer, generates a large amount of electricity
Sub- hole pair.The electronics of generation continues to transport to n-type electrode direction, and the hole of generation continues to transport to p-type electrode direction, is formed
Electric current, to successfully be detected to ultraviolet light.
In practical application, the material for preparing ultraviolet light detector may be different, can use AlGaN ternary alloy three-partalloy.It needs
Illustrate, AlGaN ternary alloy three-partalloy described here not necessarily includes these three elements, be can also be according to the difference of component
The combination of the binary or ternaries such as AlN, GaN, AlGaN.It is different with the component of element below in order to clearly show that the material of different layers
To distinguish.Such as:
The material of p-type layer is AlxGa1-xN, wherein 0≤x≤1；
The material of the photosensitive absorbed layer of i type is AlyGa1-yN, wherein 0≤y≤1；
The material of p-type transition zone is AlzGa1-zN, wherein 0≤z≤1；
The material of i type avalanche layer includes AluGa1-uN and AltGa1-tN, 0≤u≤1,0≤t≤1, wherein AluGa1-uN and
AltGa1-tTwo kinds of material periodicities of N are arranged alternately；
The material of n-layer is AlwGa1-wN, wherein 0≤w≤1.
In practical application, the selection of other additional level materials of detector can also use AlGaN ternary alloy three-partalloy, herein
It repeats no more.But it should be noted that substrate can be the material of heterogeneous or homogeneity light-permeable.For example, substrate can be indigo plant
The transparent foreigns substrate such as jewel, silicon carbide, or be the transparent homo-substrates such as GaN, AlN, or after being thinned by technique
The non-transparent materials such as the silicon single crystal of light-permeable.No matter which kind of material substrate selects, as long as can be with light transmission, allow to detect be ultraviolet
Light penetrates substrate, is not limited by material recited herein.
Low temperature buffer layer thickness usually can be set to 10nm~5 μm, p-type layer with a thickness of 10nm~1 μm, i type is photosensitive
Absorbed layer with a thickness of 1nm~1 μm, p-type transition zone with a thickness of 10nm~1 μm, the periodicity of i type avalanche layer be 1~100 it
Between, n-layer is with a thickness of 10nm~5 μm.
Using the technical solution of the embodiment of the present invention one, nipip structure, substrate setting are set by ultraviolet avalanche probe
For the substrate of light-permeable.As shown in figure 5, ultraviolet light is no longer as in the prior art from forward entrance, but carried on the back from substrate it is incident,
By the reception incident light of lowermost layer.Therefore, if it is desirable to be integrated, so that it may pass through indium column and reading circuit phase thereon
Even, it had both realized integrated, and had in turn avoided circuit board and detector is blocked.
Embodiment two
On the basis of example 1, it is also found that: during growing i type avalanche layer, different structures is set inventor
Meter mode will affect the gain effect of detector.Fig. 6 is i type avalanche layer internal structure in ultraviolet avalanche probe in the prior art
Schematic diagram.As shown in fig. 6, existing i type avalanche layer includes AluGa1-uN and AltGa1-tN (0≤u≤1,0≤t≤1), AluGa1-uN
And AltGa1-tTwo kinds of material periodicities of N are arranged alternately.Wherein, AluGa1-uN is potential well layer, AltGa1-tN is barrier layer, potential barrier
Layer is close to substrate.Assuming that u=0, t=1, i.e. AluGa1-uN is GaN, AltGa1-tN is AlN.That is, two kinds of materials of GaN and AlN
Material is periodically arranged alternately, and the forbidden bandwidth of GaN is less than the forbidden bandwidth of AlN.This design method is likely to cause decrease
The gain of detector.Its reason is: the light induced electron that signal light generates drifts about under electric field driven enters avalanche region, then electricity
Son moves in the Γ paddy of GaN obtains 2eV energy, when entering back into AlN, by the conservation of energy it is found that reaching the Γ paddy paddy of AlN
Bottom.Then movement obtains other 2eV energy in the Γ paddy of AlN.In the movement of a cycle, electronics is more than
The energy of 4eV, and transported in Γ paddy always, therefore equivalent Γ paddy depth is more than 4eV.It, can when electronics returns in GaN
Expeditiously to trigger dissociative collisions.
It is described in further detail with reference to Fig. 7, the broken line above Fig. 7 indicates conduction band, and broken line below indicates valence band.Electronics
It is obtained under the action of electric field from the GaN potential well layer in N period into the AlN barrier layer (forbidden bandwidth 6.2eV) in N period
Into the GaN potential well layer (forbidden bandwidth 3.4eV) in the N+1 period, energy assigns in DC Electric Field for energy more than 4eV
To the ionization threshold value (5.3eV) of GaN, dissociative collisions occur in GaN.Hereafter, electronics is crossed the N+1 weeks under electric field action
Then in the GaN potential well layer in the N+2 period dissociative collisions occur for phase barrier layer AlN, and with this periodically dissociative collisions,
It is finally reached the effect of snowslide.
And problem is, and during preparing i type avalanche layer, in each period in growing AIN on the GaN of relaxation, by
It will form one layer of AlGaN permeable formation between growth temperature and lattice mismatch, the AlN and the GaN in N+1 period in N period, seep
The forbidden bandwidth of permeable layers is between GaN and AlN.Fig. 8 is inside i type avalanche layer by the structure chart of infiltration.As shown in figure 8,
During electronics enters GaN potential well layer from AlN barrier layer, due to the presence of permeable formation, the energy of electronics is likely to be dissipated
It penetrates, is not enough to that dissociative collisions occur in GaN potential well layer, to reduce the gain of ultraviolet avalanche probe.
Inventor in view of the problems of the existing technology, it is further proposed that a kind of new i type avalanche layer.As shown in figure 9, should
I type avalanche layer includes AluGa1-uN and AltGa1-tN (0≤u≤1,0≤t≤1), AluGa1-uN and AltGa1-tTwo kinds of material weeks of N
Phase property is arranged alternately.Wherein, AluGa1-uN is potential well layer, AltGa1-tN is barrier layer, and potential well layer is close to substrate.AluGa1-uN and
AltGa1-tIt further include stress regulating course Al between NvGa1-vN,0≤u≤v≤t≤1.Stress regulating course AlvGa1-vThe forbidden band of N is wide
Degree is less than the AltGa1-tThe forbidden bandwidth of N is greater than the AluGa1-uThe forbidden bandwidth of N.
Figure 10 is a kind of embodiment of i type avalanche layer structure described in Fig. 9.As shown in Figure 10, for convenience of description, it is assumed that u
=0, t=1, i.e. AluGa1-uN is GaN, AltGa1-tN is AlN.GaN is potential well layer, and AlN is barrier layer, close with GaN in the period
Substrate.GaN, rear growing AIN are first grown in one cycle.Due to growth temperature and lattice mismatch, in the case where GaN relaxation
When growing AIN, AlGaN stress regulating course will be formed between the GaN and the AlN in N period in N period.Figure 11 is Figure 10 institute
Show the energy band diagram of i type avalanche layer.From Figure 11 it is recognised that electronics is introduced into GaN potential well layer from p-type transition zone, in electric field action
Lower acquisition energy.One skilled in the art will appreciate that the forbidden bandwidth of AlN barrier layer is much larger than the forbidden bandwidth of GaN potential well layer, electricity
Son is difficult directly to enter AlN barrier layer from GaN potential well layer.It include one between GaN potential well layer and AlN barrier layer in the present embodiment
AlGaN stress regulating course.Since the forbidden bandwidth of AlGaN stress regulating course is less than the forbidden bandwidth of AlN barrier layer, barrier is small
In AlN barrier layer, electronics is easier to enter AlGaN stress regulating course.Under electric field action, electronics continues to obtain energy, enters
AlN barrier layer.At this point, the forbidden bandwidth due to AlN is 6.2eV, the energy of electronics is still not enough to bring it about dissociative collisions.
When GaN potential well layer of the electronics from AlN barrier layer into next period, energy is easier to reach the ionization threshold value of GaN
(5.3eV).Unlike the prior art, the present embodiment redesigns the band structure of superlattices avalanche region, improves electronics
It transports, reduces its probability scattered, to further increase the dissociative collisions coefficient of electronics, and then improve the increasing of detector
Benefit.
That is, in the present embodiment electronics in each period from GaN potential well layer to AlGaN stress regulating course, then arrive AlN
Barrier layer all gradually obtains energy, and dissociative collisions occur in the GaN potential well layer of next cycle, is finally reached the effect of snowslide
Fruit improves the gain of detector.
Stress regulating course can be because of growth temperature and self-assembling formation due to lattice mismatch, be also possible in N period GaN and
One layer of AlGaN is specially designed between N period AlN.In addition, in order to preferably help electronics to enter AlN potential barrier from GaN potential well layer
Layer, can also set gradual change for the component of AlGaN stress regulating course.Assuming that the component of AlGaN stress regulating course utilizes change
Measuring v indicates, is expressed as Al away from the stress regulating course lower surface vertical range in the period for the material at dvGa1-vN(0≤u≤v
≤t≤1).When d increases to the thickness D of stress regulating course from 0, v increases to t from u.That is: Al component is with stress in stress regulating course
The first derivative of the variation function of regulating course thickness d is greater than 0.Certainly, in practical application Al component how in stress regulating course
How not fixed mode is changed, as long as increasing to potential well layer from potential well layer.AlGaN stress regulating course is according to requiring to set
Set several periods, for example 1~100 period can be set, each period with a thickness of 1nm~1 μm.
The present embodiment can also meet gain requirement using the periodicity of setting, without making ultraviolet avalanche probe
Work works in Geiger mode angular position digitizer in linear model, to reduce circuit complexity.One skilled in the art will appreciate that purple
Outer avalanche probe undergoes non-ionization area, monopole ionization area and bipolar ionization area during reversed bias voltage is from small become larger.Its
In, in monopole ionization area, device can work under constant bias, and gain stabilization, this operating mode is called linear work mould
Formula.Gain of the existing ultraviolet avalanche probe under linear model is relatively low, need for bias voltage to be placed in breakdown voltage it
On trigger bipolar ionization.Since avalanche process forms positive feedback loop to both direction is overlapping, gain is very big, but simultaneously
Device can not steadily work on breakdown voltage, need periodically device voltage to be reduced under breakdown point to be quenched
Snowslide, this operating mode are called Geiger mode angular position digitizer.Therefore, existing ultraviolet avalanche probe always needs to quench circuit to detection
State is controlled.If integrated to detector, with the increase of probe unit, quenching circuit will be more complicated.Moreover,
Due to quenching the limitation in period, number of photons is cannot be distinguished in Geiger mode angular position digitizer, and the interval opened twice is longer.This is because detector is opened
Carrier has been captured when opening, and the time is needed gradually to release.If interval time is too short, the carrier of previous window initiation
Avalanche pulse can be generated in next window, cause dark counting, i.e. afterpulsing effect.
And the structure of the i type avalanche layer of the back incidence designed in the present embodiment, it is big using conduction band difference between GaN and AlN
(2eV), and the characteristics of valence band difference small (0.7eV), i.e., electronics is transported in conduction band only needs the extra electric field of very little that can reach
The threshold value of dissociative collisions.Therefore, under existing fringing field, only dissociative collisions, i.e. monopole ionization occur for electrons.So, from above-mentioned
Illustrate it is recognised that ultraviolet avalanche probe work is in linear operation mode in the case of monopole ionization.As for detector
Gain then can be with the increase exponentially property growth of the periodicity of i type avalanche layer.That is, utilizing the present embodiment design
I type avalanche layer structure, detector can reach high-gain under linear operation mode, only by control periodicity.Such as:
Assuming that the quantity of carrier becomes 2 times after dissociative collisions occur for each period of i type avalanche layer, then, if there is 10 week
Phase, gain is up to 1000 times (2^10)；20 periods, gain reach 1000000 times (2^20), and so on.
In short, the present embodiment two is on the basis of example 1, design is re-started to the internal structure of i type avalanche layer,
New stress regulating course avoids carrier scattering, provides the ability of its transition, so that detector is easier that dissociative collisions occur.
Further, it since detector can work in linear model, without quenching circuit, in the case where guaranteeing high-gain, reduces
Circuit complexity avoids the defect that number of photons cannot be distinguished.
Embodiment three
A kind of more specifically embodiment is set forth below in scheme in order to better illustrate the present invention.Figure 12 is this implementation
The method flow diagram of example three, Figure 13 are the ultraviolet avalanche probe structural schematic diagrams using this method preparation.Assuming that: the present embodiment
Using the material of this light-permeable of sapphire as substrate；P-type layer AlxGa1-xX=0 in N；The photosensitive absorbed layer Al of i typeyGa1-yN
In y=0；P-type transition zone AlzGa1-zZ=0 in N；The material of i type avalanche layer includes AluGa1-uN and AltGa1-tN, wherein u
=0, as Potential well layer materials, t=1, as abarrier layer material；N-layer AlwGa1-wW=0 in N.
In addition, the present embodiment also uses metallo-organic compound chemical gaseous phase deposition (MOCVD) method, and utilize trimethyl
Gallium (TMGa) is used as gallium source, high purity N H3As nitrogen source, two luxuriant magnesium make p-type dopant.In practical application, detector mistake is prepared
Journey also needs to etch table top, depositing electrode and is passivated, and method is same as the prior art, does not repeat herein.
With reference to Figure 12 and 13, the preparation method of the present embodiment three includes:
Step 1201: growing one layer 2 μm of GaN low temperature buffer layer on substrate, doping concentration is about 1019cm-3。
Step 1202: the p-type GaN of one layer of 100nm is grown on the buffer layer, doping concentration is about 1019cm-3。
Step 1203: the photosensitive absorbed layer of i type GaN of one layer of 300nm is grown on the p-type GaN.
Step 1204: the p-type GaN transition layer of one layer of 16nm, doping concentration are grown on the photosensitive absorbed layer of the i type GaN
About 1019cm-3。
Step 1205: making silicon source using trimethyl aluminium (TMAl), 5 period i type avalanche layers, i type are grown on p-type transition zone
Avalanche layer includes GaN and AlN, and two kinds of material periodicities alternating growths, wherein GaN is with a thickness of 10nm, and AlN is with a thickness of 20nm；This
I type avalanche layer described in step only has two layers, does not include stress regulating course, also belongs to superlattices dynode layer, can also serve as
The snowslide amplification region of photo-generated carrier.
Step 1206: the GaN of one layer of 500nm is grown on the i type avalanche layer as n-layer, doping concentration is about
1019cm-3。
In practical application, it can also continue to carve depth on surface using inductively coupled plasma (ICP) lithographic technique
For the table top of 1200nm, layer of Ni/Au electrode, thermal annealing, in N-shaped are deposited in p-type layer using electron beam evaporation (EB) technology
Layer one layer of Cr/Au electrode of deposition, then deposits the SiO of 200nm using PECVD technique on table top2Passivation layer.
Transparent sapphire is utilized as substrate in the embodiment of the present invention, and it is photosensitive successively to grow p-type layer, i type on it
Absorbed layer, p-type transition zone, i type avalanche layer, n-layer, i.e. nipip structure.In this way, when ultraviolet light is incident on the spy from substrate back
When surveying in device, UV light permeability Sapphire Substrate and GaN low temperature buffer layer are irradiated to p-type layer, itself forbidden band of p-type layer absorptance is wide
The high photon of corresponding energy is spent, not the low photon of energy corresponding to absorptance itself forbidden bandwidth.The low photon of energy will be saturating
P-type layer is crossed to be absorbed by the photosensitive absorbed layer of i type.The photosensitive absorbed layer of i type generates under action of ultraviolet light, will generate electron hole pair,
Electronics is transported to n-type electrode direction, enters i type avalanche layer by p-type transition zone.I type avalanche layer is the superlattices for having 5 periods
Area, alternately includes GaN and two kinds of AlN, and the triggering avalanche in GaN generates a large amount of electron hole pairs.The electronics of generation continues
It being transported to the direction n-type electrode (Cr/Au), the hole of generation continues to transport to the direction p-type electrode (Ni/Au), electric current is formed, thus
Successfully ultraviolet light is detected.
Example IV:
Specifically enumerate another embodiment again below.Figure 14 is the method flow diagram of the present embodiment four, and Figure 15 is to utilize to be somebody's turn to do
The ultraviolet avalanche probe structural schematic diagram of method preparation.Assuming that: the present embodiment using this transparent material of sapphire as
Substrate, p-type layer AlxGa1-xX=0.4 in N；The photosensitive absorbed layer Al of i typeyGa1-yY=0.4 in N；P-type transition zone AlzGa1-zN
In z=0.4；The material of i type avalanche layer includes AluGa1-uN and AltGa1-tN, wherein u=0, as Potential well layer materials, t=1,
As abarrier layer material；N-layer AlwGa1-wW=0 in N.
Using metallo-organic compound chemical gaseous phase deposition (MOCVD) method, trimethyl gallium (TMGa) is used as gallium source, high-purity
Spend NH3As nitrogen source, two luxuriant magnesium make p-type dopant.
Step 1401: growing the Al0.4Ga0.6N low temperature buffer layer of 20nm on substrate.
Step 1402: the p-type Al of one layer of 300nm is grown on above-mentioned buffer layer0.4Ga0.6N, doping concentration are about 1019cm-3。
Step 1403: in p-type Al0.4Ga0.6The i type Al of one layer of 300nm is deposited on N layer0.4Ga0.6The photosensitive absorbed layer of N.
Step 1404: in i type Al0.4Ga0.6The p-type Al of one layer of 16nm is deposited on the photosensitive absorbed layer of N0.4Ga0.6N transition zone,
Doping concentration is about 1019cm-3。
Step 1405: on p-type transition zone, growing i type GaN (the 7nm)/Al in 10 periods0.4Ga0.6N(5nm)/AlN
Snowslide amplification region of (8nm) the superlattices dynode layer as photo-generated carrier.
Step 1406: making n-type dopant using silane, in i type GaN (7nm)/Al0.4Ga0.6N (5nm)/AlN (8nm) is super
The n-type GaN layer of one layer of 500nm is grown on lattice dynode layer, doping concentration is about 1019cm-3。
In practical application, it can also continue to carve depth on surface using inductively coupled plasma (ICP) lithographic technique
For 1.5 μm of table top, layer of Ni/Au electrode, thermal annealing, in n-layer are deposited in p-type layer using electron beam evaporation (EB) technology
One layer of Cr/Au electrode is deposited, then deposits the SiO of 200nm on table top using PECVD technique2Passivation layer.
Equally, transparent sapphire is utilized as substrate in the embodiment of the present invention, and successively grows p-type layer, i type on it
Photosensitive absorbed layer, p-type transition zone, i type avalanche layer, n-layer, i.e. nipip structure.When ultraviolet light is incident on the detection from substrate back
When in device, UV light permeability Sapphire Substrate and GaN low temperature buffer layer are irradiated to p-type layer, itself forbidden bandwidth of p-type layer absorptance
The high photon of corresponding energy, the not low photon of energy corresponding to absorptance itself forbidden bandwidth.The low photon of energy will transmit through p
Type layer is absorbed by the photosensitive absorbed layer of i type.The photosensitive absorbed layer of i type generates under action of ultraviolet light, will generate electron hole pair, electronics
It is transported to n-type electrode direction, enters i type avalanche layer by p-type transition zone.I type avalanche layer is the regions of superlattice for having 10 periods,
Alternately GaN (7nm)/Al0.4Ga0.6N (5nm)/three kinds of AlN (8nm), and the triggering avalanche in GaN, generate a large amount of electron holes
It is right.The electronics of generation continues to transport to the direction n-type electrode (Cr/Au), and the hole of generation is continued to the direction p-type electrode (Ni/Au)
It transports, electric current is formed, to successfully detect to ultraviolet light.
It is emphasized that the i type avalanche layer of the present embodiment includes stress regulating course, forbidden bandwidth be in GaN and
Between AlN, electronics is not only set to be more easier to transit to AlN from GaN, and detector can work in linear model, without quenching
Ignition circuit can greatly reduce the complexity of circuit.
Although the present invention only gives the structure of a formula, core of the invention content is in back incident-type
In the preparation of the ultraviolet avalanche probe of AlGaN base Compositional Superlattice structure, as long as being related to back incident-type AlGaN base Compositional Superlattice
The back incident-type detector of material is the content that the present invention includes.
The above has carried out further detailed description to the purpose of the present invention, technical scheme and beneficial effects, is answered
Understand, the above is not intended to limit the invention, and all within the spirits and principles of the present invention, that is done any repairs
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of ultraviolet avalanche probe, which is characterized in that the detector is nipip structure, is successively wrapped from bottom to top from substrate
It includes:
P-type layer, the photosensitive absorbed layer of i type, p-type transition zone, i type avalanche layer, n-layer；
It is provided with N-shaped Ohmic electrode in the n-layer, p-type Ohmic electrode is provided in the p-type layer；
The p-type layer is the structure sheaf for receiving incident light；
The substrate is the substrate of light-permeable；
Wherein, the material of the i type avalanche layer includes the potential well layer and barrier layer being periodically arranged alternately, the potential well layer and gesture
Conduction band difference between barrier layer is poor greater than valence band, and potential well layer is located at the lowest level of a cycle, close to the p-type transition zone, potential barrier
Layer is located at the top layer of a cycle, includes stress tune between the potential well layer and barrier layer in the n-layer, a cycle
Ganglionic layer, the forbidden bandwidth of the stress regulating course are less than the forbidden bandwidth of the barrier layer, and the forbidden band greater than the potential well layer is wide
Degree.
2. detector according to claim 1, which is characterized in that
The material of the p-type layer is AlxGa1-xN, wherein 0≤x≤1；
The material of the photosensitive absorbed layer of i type is AlyGa1-yN, wherein 0≤y≤1；
The material of the p-type transition zone is AlzGa1-zN, wherein 0≤z≤1；
The material of the n-layer is AlwGa1-wN, wherein 0≤w≤1.
3. detector according to claim 2, which is characterized in that
The material of the i type avalanche layer includes AluGa1-uN and AltGa1-tN, 0≤u≤1,0≤t≤1；
The AluGa1-uN and AltGa1-tTwo kinds of material periodicities of N are arranged alternately, wherein the AluGa1-uN is potential well layer, position
In the lowest level of a cycle, close to the p-type transition zone；The AltGa1-tN is barrier layer, positioned at the most upper of a cycle
Layer, close to the n-layer；
The AluGa1-uThe forbidden bandwidth of N is less than AltGa1-tThe forbidden bandwidth of N.
4. detector according to claim 3, which is characterized in that
The AluGa1-uN and AltGa1-tIt further include stress regulating course Al between NvGa1-vN, wherein 0≤u≤v≤t≤1；It is described
Stress regulating course AlvGa1-vThe forbidden bandwidth of N is less than the AltGa1-tThe forbidden bandwidth of N, and it is greater than the AluGa1-uThe taboo of N
Bandwidth.
5. detector according to claim 4, which is characterized in that
The stress regulating course is with a thickness of D (D > 0), stress regulating course AlvGa1-vComponent v is variable, u≤v≤t, the component in N
Positional distance current period lower surface distance in the stress regulating course of place is d (0≤d≤D), then d from 0 be incremented to D when, v is from u
Increase to t, component v is greater than 0 with the first derivative of the variation function of distance d.
6. a kind of preparation method of ultraviolet avalanche probe is suitable for detector described in claim 1, which is characterized in that should
Method includes:
One layer of p-type layer is grown on the basis of substrate；
One layer of photosensitive absorbed layer of i type is grown in the p-type layer；
One layer of p-type transition zone is grown on the photosensitive absorbed layer of i type；
One layer of i type avalanche layer is grown on the p-type transition zone；
One layer of n-layer is grown on the i type avalanche layer；
It is provided with N-shaped Ohmic electrode in the n-layer, p-type Ohmic electrode is provided in p-type layer；The p-type layer is to receive incidence
The structure sheaf of light；The substrate is the substrate of light-permeable；The material of the i type avalanche layer includes the potential well being periodically arranged alternately
Layer and barrier layer, the conduction band difference between the potential well layer and barrier layer is poor greater than valence band, and potential well layer is located at the most lower of a cycle
Layer, close to the p-type transition zone, barrier layer is located at the top layer of a cycle, the gesture in the n-layer, a cycle
It include stress regulating course between well layer and barrier layer, the forbidden band that the forbidden bandwidth of the stress regulating course is less than the barrier layer is wide
Degree, greater than the forbidden bandwidth of the potential well layer.
7. according to the method described in claim 6, it is characterized in that,
The material of the p-type layer is AlxGa1-xN, wherein 0≤x≤1；
The material of the photosensitive absorbed layer of i type is AlyGa1-yN, wherein 0≤y≤1；
The material of the p-type transition zone is AlzGa1-zN, wherein 0≤z≤1；
The material of the n-layer is AlwGa1-wN, wherein 0≤w≤1.
8. the method according to the description of claim 7 is characterized in that
The material of the i type avalanche layer includes AluGa1-uN and AltGa1-tN, 0≤u≤1,0≤t≤1；
The AluGa1-uN and AltGa1-tTwo kinds of material periodicities of N are arranged alternately, wherein the AluGa1-uN is potential well layer, position
In the lowest level of a cycle, close to the p-type transition zone；The AltGa1-tN is barrier layer, positioned at the most upper of a cycle
Layer, close to the n-layer；
The AluGa1-uThe forbidden bandwidth of N is less than AltGa1-tThe forbidden bandwidth of N.
9. according to the method described in claim 8, it is characterized in that,
The AluGa1-uN and AltGa1-tIt further include stress regulating course Al between NvGa1-vN, wherein 0≤u≤v≤t≤1；It is described
Stress regulating course AlvGa1-vThe forbidden bandwidth of N is less than the AltGa1-tThe forbidden bandwidth of N is greater than the AluGa1-uThe forbidden band of N
Width.
10. according to the method described in claim 9, it is characterized in that,
The stress regulating course is with a thickness of D (D > 0), stress regulating course AlvGa1-vComponent v is variable, u≤v≤t, the component in N
Positional distance current period lower surface distance in the stress regulating course of place is d (0≤d≤D), then d from 0 be incremented to D when, v is from u
Increase to t, component v is more than or equal to 0 with the first derivative of the variation function of distance d.
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