CN109980040A - A kind of gallium oxide MIS structure ultraviolet detector - Google Patents

A kind of gallium oxide MIS structure ultraviolet detector Download PDF

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Publication number
CN109980040A
CN109980040A CN201910264632.1A CN201910264632A CN109980040A CN 109980040 A CN109980040 A CN 109980040A CN 201910264632 A CN201910264632 A CN 201910264632A CN 109980040 A CN109980040 A CN 109980040A
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China
Prior art keywords
electrode
layer
schottky
gallium oxide
translucent
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CN201910264632.1A
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Chinese (zh)
Inventor
谢峰
杨国锋
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Nanjing Purple Light Technology Co Ltd
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Nanjing Purple Light Technology Co Ltd
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Priority to CN201910264632.1A priority Critical patent/CN109980040A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264Inorganic materials
    • H01L31/032Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
    • H01L31/1085Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)

Abstract

The invention discloses a kind of gallium oxide MIS structure ultraviolet detectors, including N-type β-Ga2O3Substrate, unintentional doping β-Ga2O3Light absorbing layer, Schottky barrier dielectric barrier, ohmic electrode layer, translucent Schottky electrode, dielectric passivation layer and contact electrode.The advantage of the invention is that designing the height for improving Schottky barrier using Schottky barrier barrier layer, so that thermal noise and dislocation etc. be inhibited to generate the factor of dark current, reduces the dark current of device and then promote the ability of device detection small-signal.The device is not necessarily to etching using vertical structure design simultaneously, so as to avoid etching injury bring device reliability issues.

Description

A kind of gallium oxide MIS structure ultraviolet detector
Technical field
The present invention relates to semiconductor photoelectric device fields, and in particular to a kind of gallium oxide MIS structure ultraviolet detector.
Background technique
Ultraviolet detection technology is the another dual-use detection skill to grow up after infrared and Laser Detection Technique Art.The core of ultraviolet detection technology is to develop highly sensitive ultraviolet detector.Currently used ultraviolet detector includes ultraviolet increasing The ultraviolet detectors such as strong type silicon photoelectric diode, ultraviolet avalanche diode, GaAs and GaP and the purple based on wide bandgap semiconductor External detector.Although the ultraviolet detector technique based on silicon materials and other conventional Group III-V compound semiconductors compared at It is ripe, but since these materials have lesser forbidden bandwidth, corresponding detector, which has to install expensive filter additional, just may be used Selectively to work in ultraviolet band.In addition, being influenced by the larger weight of filter, these detectors are in aerospace etc. The application in field is restricted.
The appearance of semiconductor material with wide forbidden band (forbidden bandwidth > 2.5eV) of new generation, such as: GaN, SiC and Ga2O3Deng being The research and application and development of high-performance ultraviolet detector are filled with new vitality.However GaN and SiC material are due to its forbidden bandwidth Corresponding optical detection wavelength is in visible-blind, when carrying out deep ultraviolet detection still by the interference of solar ultraviolet radiation. Although the AlGaN material of high Al contents can work in non-solar-blind band, due to its preparation need to carry out on sapphire it is heterogeneous Extension, biggish lattice mismatch and thermal mismatching cause the sensitive detection parts of preparation by high dark current and low device reliability. In recent years, with the demand of application, Ga2O3Investigation of materials increases, the advantage is that it is natural work non-solar-blind band without Install any filtering system additional, however its device dark current is still relatively high, influences it in the detection of faint ultraviolet radioactive object Ability.
Summary of the invention
The technical problem to be solved by the present invention is to, a kind of extremely low dark current is provided, without etching and simple process it is novel Gallium oxide MIS structure ultraviolet detector.
The present invention through the following technical solutions to achieve the above objectives:
A kind of gallium oxide MIS structure ultraviolet detector, including
N-type β-Ga2O3Substrate;
In the N-type β-Ga2O3The unintentional doping β-Ga of substrate face extension2O3Light absorbing layer;
In the unintentional doping β-Ga2O3The Schottky barrier dielectric barrier of light absorbing layer front deposit;
In the N-type β-Ga2O3The ohmic electrode layer of substrate back production;
In the translucent Schottky electrode of Schottky barrier dielectric barrier front production;
It is etched with and can show in the dielectric passivation layer of the translucent Schottky electrode front deposit, the dielectric passivation layer Reveal the fairlead of translucent Schottky electrode;
In the contact electrode that the position of the fairlead makes, the contact electrode extend to fairlead it is interior and with it is translucent Schottky electrode connection.
Further improvement lies in that the Schottky barrier dielectric barrier is SiO2Layer or Al2O3Layer.
Further improvement lies in that the translucent Schottky electrode shape is rectangular, round or interdigitation.
Further improvement lies in that the translucent Schottky electrode selects Ni/Au electrode, Pt/Au electrode or graphene Electrode.
Further improvement lies in that the dielectric passivation layer is SiO2Layer.
Further improvement lies in that the N-type β-Ga2O3Substrate with a thickness of 350 μm, carrier concentration is 5 × 1017cm-3, the unintentional doping β-Ga2O3Light absorbing layer with a thickness of 1 μm, the Schottky barrier dielectric barrier with a thickness of 2nm, the ohmic electrode layer with a thickness of 2 μm, the translucent Schottky electrode with a thickness of 5nm, the medium is blunt Change layer with a thickness of 150nm, the contact electrode with a thickness of 2 μm.
Further improvement lies in that the ohmic electrode layer, translucent Schottky electrode and contact electrode are to use Electron beam evaporation method is made.
The principle of the present invention and beneficial effect are: the height for improving Schottky barrier is designed using Schottky barrier barrier layer Degree reduces the dark current of device and then promotion device detection is micro- so that thermal noise and dislocation etc. be inhibited to generate the factor of dark current The ability of weak signal.The device is not necessarily to etching using vertical structure design simultaneously, so as to avoid etching injury bring device Integrity problem.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of novel oxidized gallium MIS structure ultraviolet detector of the present invention;
Fig. 2 is traditional gallium oxide ultraviolet detector (a) and a kind of novel oxidized gallium MIS structure ultraviolet detector of the present invention (b) band structure comparison diagram;
In figure: 101, N-type β-Ga2O3Substrate;102, unintentional doping β-Ga2O3Light absorbing layer;103, Schottky barrier is situated between Matter barrier layer;104, ohmic electrode layer;105, translucent Schottky electrode;106, dielectric passivation layer;107, electrode is contacted.
Specific embodiment
The application is described in further detail with reference to the accompanying drawing, it is necessary to it is indicated herein to be, implement in detail below Mode is served only for that the application is further detailed, and should not be understood as the limitation to the application protection scope, the field Technical staff can make some nonessential modifications and adaptations to the application according to above-mentioned application content.
As shown in Figure 1, the embodiment of the present invention uses N-type β-Ga2O3Substrate 101, with a thickness of 350 μm, substrate carrier concentration It is 5 × 1017cm-3;In N-type β-Ga2O3The unintentional doping β-Ga of one layer of 1 μ m-thick of extension on substrate 1012O3Light absorbing layer 102; In unintentional doping β-Ga2O3On light absorbing layer 102, using PECVD (plasma enhanced chemical vapor deposition method) deposition techniques The SiO of one layer of 2nm thickness2Schottky barrier dielectric barrier 103;
The Ti/Au ohmic electrode layer 104 of 2 μ m-thicks is made at the total back side using electron beam evaporation;Using electricity Beamlet evaporation production total front makes Pt/Au (2.5nm/2.5nm) translucent Schottky electrode 105;In translucent Xiao The SiO of 150nm thickness is deposited on special base electrode 1052Dielectric passivation layer 106, dielectric passivation layer 106 play the work of antireflection simultaneously With;Fairlead (being not marked in figure) is etched using wet chemical etching technique;The Ti/ of 2 μ m-thicks is finally made of electron beam evaporation Au contacts electrode 107.
Device is designed using the Schottky barrier type structure of vertical structure, reduces etching injury bring device reliability Problem.One layer of dielectric barrier barrier layer is inserted between metal and semiconductor simultaneously.
As shown in Fig. 2, Fig. 2 (a) shows traditional gallium oxide ultraviolet detector (a) band structure figure, Fig. 2 (b) exhibition What is shown is detector band structure figure of the present invention.It can be seen that the present invention further improves the schottky barrier height of device, To inhibit the dark current of device, the ability of detection small-signal is improved.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously Limitations on the scope of the patent of the present invention therefore cannot be interpreted as.It should be pointed out that for those of ordinary skill in the art For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to guarantor of the invention Protect range.

Claims (7)

1. a kind of gallium oxide MIS structure ultraviolet detector, it is characterised in that: including
N-type β-Ga2O3Substrate (101);
In the N-type β-Ga2O3The unintentional doping β-Ga of substrate (101) front extension2O3Light absorbing layer (102);
In the unintentional doping β-Ga2O3The Schottky barrier dielectric barrier (103) of light absorbing layer (102) front deposit;
In the N-type β-Ga2O3The ohmic electrode layer (104) of substrate (101) back side production;
In the translucent Schottky electrode (105) of Schottky barrier dielectric barrier (103) front production;
In the dielectric passivation layer (106) of translucent Schottky electrode (105) the front deposit, the dielectric passivation layer (106) On be etched with the fairlead that can appear translucent Schottky electrode (105);
In the contact electrode (107) that the position of the fairlead makes, the contact electrode (107) extend to fairlead it is interior and with Translucent Schottky electrode (105) connection.
2. a kind of gallium oxide MIS structure ultraviolet detector according to claim 1, it is characterised in that: the Schottky gesture Building dielectric barrier (103) is SiO2Layer or Al2O3Layer.
3. a kind of gallium oxide MIS structure ultraviolet detector according to claim 1, it is characterised in that: translucent Xiao Special base electrode (105) shape is rectangular, round or interdigitation.
4. a kind of gallium oxide MIS structure ultraviolet detector according to claim 1, it is characterised in that: translucent Xiao Special base electrode (105) selects Ni/Au electrode, Pt/Au electrode or Graphene electrodes.
5. a kind of gallium oxide MIS structure ultraviolet detector according to claim 1, it is characterised in that: the dielectric passivation Layer (106) is SiO2Layer.
6. a kind of gallium oxide MIS structure ultraviolet detector according to claim 1, it is characterised in that: the N-type β-Ga2O3 Substrate (101) with a thickness of 350 μm, carrier concentration is 5 × 1017cm-3, the unintentional doping β-Ga2O3Light absorbing layer (102) with a thickness of 1 μm, the Schottky barrier dielectric barrier (103) with a thickness of 2nm, the ohmic electrode layer (104) with a thickness of 2 μm, the translucent Schottky electrode (105) with a thickness of 5nm, the thickness of the dielectric passivation layer (106) Degree be 150nm, it is described contact electrode (107) with a thickness of 2 μm.
7. a kind of gallium oxide MIS structure ultraviolet detector according to claim 1, it is characterised in that: the Ohmic contact Electrode layer (104), translucent Schottky electrode (105) and contact electrode (107) be using electron beam evaporation method production and At.
CN201910264632.1A 2019-04-03 2019-04-03 A kind of gallium oxide MIS structure ultraviolet detector Pending CN109980040A (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111696698A (en) * 2020-06-22 2020-09-22 厦门理工学院 Gallium oxide Schottky isotope battery and preparation method thereof
CN112186065A (en) * 2020-09-08 2021-01-05 华南理工大学 MSM type detector based on impurity blocking zone and preparation method thereof
CN113193037A (en) * 2021-04-01 2021-07-30 北京大学 Ga2O3Base resonance tunneling diode and preparation method thereof
CN113410330A (en) * 2021-06-22 2021-09-17 金华紫芯科技有限公司 Solar blind ultraviolet detector of graphene amorphous gallium oxide film
CN114267747A (en) * 2021-12-21 2022-04-01 河北工业大学 Ga having metal gate structure2O3AlGaN/GaN solar blind ultraviolet detector and preparation method thereof
CN114709271A (en) * 2022-03-18 2022-07-05 中国科学院微电子研究所 Microstrip detector and preparation method thereof
CN115810694A (en) * 2022-12-19 2023-03-17 吉林大学 Low-noise high-response Ga 2 O 3 Avalanche photodiode and preparation method thereof

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CN101997010A (en) * 2009-08-11 2011-03-30 元太科技工业股份有限公司 Digital X-ray detection panel and manufacturing method thereof
CN102034902A (en) * 2010-11-03 2011-04-27 上海大学 Method for preparing silicon-based SIS heterojunction photoelectric device
CN102832286A (en) * 2012-09-12 2012-12-19 中国电子科技集团公司第三十八研究所 Two-operation-mode ultraviolet detector with vertical structure and preparation method thereof
US20150372175A1 (en) * 2014-06-23 2015-12-24 Zena Technologies, Inc. Vertical Pillar Structured Infrared Detector and Fabrication Method for the Same
CN108878576A (en) * 2018-07-03 2018-11-23 中国科学院微电子研究所 Gallium oxide-based ultraviolet detector
CN209675319U (en) * 2019-04-03 2019-11-22 南京紫科光电科技有限公司 A kind of gallium oxide MIS structure ultraviolet detector

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Publication number Priority date Publication date Assignee Title
CN101997010A (en) * 2009-08-11 2011-03-30 元太科技工业股份有限公司 Digital X-ray detection panel and manufacturing method thereof
CN102034902A (en) * 2010-11-03 2011-04-27 上海大学 Method for preparing silicon-based SIS heterojunction photoelectric device
CN102832286A (en) * 2012-09-12 2012-12-19 中国电子科技集团公司第三十八研究所 Two-operation-mode ultraviolet detector with vertical structure and preparation method thereof
US20150372175A1 (en) * 2014-06-23 2015-12-24 Zena Technologies, Inc. Vertical Pillar Structured Infrared Detector and Fabrication Method for the Same
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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111696698A (en) * 2020-06-22 2020-09-22 厦门理工学院 Gallium oxide Schottky isotope battery and preparation method thereof
CN112186065A (en) * 2020-09-08 2021-01-05 华南理工大学 MSM type detector based on impurity blocking zone and preparation method thereof
CN113193037A (en) * 2021-04-01 2021-07-30 北京大学 Ga2O3Base resonance tunneling diode and preparation method thereof
CN113410330A (en) * 2021-06-22 2021-09-17 金华紫芯科技有限公司 Solar blind ultraviolet detector of graphene amorphous gallium oxide film
CN113410330B (en) * 2021-06-22 2022-07-22 金华紫芯科技有限公司 Solar blind ultraviolet detector for graphene amorphous gallium oxide film
CN114267747A (en) * 2021-12-21 2022-04-01 河北工业大学 Ga having metal gate structure2O3AlGaN/GaN solar blind ultraviolet detector and preparation method thereof
CN114267747B (en) * 2021-12-21 2023-06-02 河北工业大学 Ga with metal gate structure 2 O 3 AlGaN/GaN solar blind ultraviolet detector and preparation method thereof
CN114709271A (en) * 2022-03-18 2022-07-05 中国科学院微电子研究所 Microstrip detector and preparation method thereof
CN115810694A (en) * 2022-12-19 2023-03-17 吉林大学 Low-noise high-response Ga 2 O 3 Avalanche photodiode and preparation method thereof
CN115810694B (en) * 2022-12-19 2024-10-18 吉林大学 Low-noise and high-response Ga2O3Base avalanche photodiode and preparation method thereof

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