CN109980040A - A kind of gallium oxide MIS structure ultraviolet detector - Google Patents
A kind of gallium oxide MIS structure ultraviolet detector Download PDFInfo
- Publication number
- CN109980040A CN109980040A CN201910264632.1A CN201910264632A CN109980040A CN 109980040 A CN109980040 A CN 109980040A CN 201910264632 A CN201910264632 A CN 201910264632A CN 109980040 A CN109980040 A CN 109980040A
- Authority
- CN
- China
- Prior art keywords
- electrode
- layer
- schottky
- gallium oxide
- translucent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims abstract description 15
- 229910001195 gallium oxide Inorganic materials 0.000 title claims abstract description 15
- 230000004888 barrier function Effects 0.000 claims abstract description 31
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000002161 passivation Methods 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 229910021389 graphene Inorganic materials 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 7
- 238000005530 etching Methods 0.000 abstract description 6
- 208000027418 Wounds and injury Diseases 0.000 abstract description 3
- 230000006378 damage Effects 0.000 abstract description 3
- 208000014674 injury Diseases 0.000 abstract description 3
- 230000008901 benefit Effects 0.000 abstract description 2
- 238000013461 design Methods 0.000 abstract description 2
- 230000006872 improvement Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000000825 ultraviolet detection Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000011896 sensitive detection Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
- H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses a kind of gallium oxide MIS structure ultraviolet detectors, including N-type β-Ga2O3Substrate, unintentional doping β-Ga2O3Light absorbing layer, Schottky barrier dielectric barrier, ohmic electrode layer, translucent Schottky electrode, dielectric passivation layer and contact electrode.The advantage of the invention is that designing the height for improving Schottky barrier using Schottky barrier barrier layer, so that thermal noise and dislocation etc. be inhibited to generate the factor of dark current, reduces the dark current of device and then promote the ability of device detection small-signal.The device is not necessarily to etching using vertical structure design simultaneously, so as to avoid etching injury bring device reliability issues.
Description
Technical field
The present invention relates to semiconductor photoelectric device fields, and in particular to a kind of gallium oxide MIS structure ultraviolet detector.
Background technique
Ultraviolet detection technology is the another dual-use detection skill to grow up after infrared and Laser Detection Technique
Art.The core of ultraviolet detection technology is to develop highly sensitive ultraviolet detector.Currently used ultraviolet detector includes ultraviolet increasing
The ultraviolet detectors such as strong type silicon photoelectric diode, ultraviolet avalanche diode, GaAs and GaP and the purple based on wide bandgap semiconductor
External detector.Although the ultraviolet detector technique based on silicon materials and other conventional Group III-V compound semiconductors compared at
It is ripe, but since these materials have lesser forbidden bandwidth, corresponding detector, which has to install expensive filter additional, just may be used
Selectively to work in ultraviolet band.In addition, being influenced by the larger weight of filter, these detectors are in aerospace etc.
The application in field is restricted.
The appearance of semiconductor material with wide forbidden band (forbidden bandwidth > 2.5eV) of new generation, such as: GaN, SiC and Ga2O3Deng being
The research and application and development of high-performance ultraviolet detector are filled with new vitality.However GaN and SiC material are due to its forbidden bandwidth
Corresponding optical detection wavelength is in visible-blind, when carrying out deep ultraviolet detection still by the interference of solar ultraviolet radiation.
Although the AlGaN material of high Al contents can work in non-solar-blind band, due to its preparation need to carry out on sapphire it is heterogeneous
Extension, biggish lattice mismatch and thermal mismatching cause the sensitive detection parts of preparation by high dark current and low device reliability.
In recent years, with the demand of application, Ga2O3Investigation of materials increases, the advantage is that it is natural work non-solar-blind band without
Install any filtering system additional, however its device dark current is still relatively high, influences it in the detection of faint ultraviolet radioactive object
Ability.
Summary of the invention
The technical problem to be solved by the present invention is to, a kind of extremely low dark current is provided, without etching and simple process it is novel
Gallium oxide MIS structure ultraviolet detector.
The present invention through the following technical solutions to achieve the above objectives:
A kind of gallium oxide MIS structure ultraviolet detector, including
N-type β-Ga2O3Substrate；
In the N-type β-Ga2O3The unintentional doping β-Ga of substrate face extension2O3Light absorbing layer；
In the unintentional doping β-Ga2O3The Schottky barrier dielectric barrier of light absorbing layer front deposit；
In the N-type β-Ga2O3The ohmic electrode layer of substrate back production；
In the translucent Schottky electrode of Schottky barrier dielectric barrier front production；
It is etched with and can show in the dielectric passivation layer of the translucent Schottky electrode front deposit, the dielectric passivation layer
Reveal the fairlead of translucent Schottky electrode；
In the contact electrode that the position of the fairlead makes, the contact electrode extend to fairlead it is interior and with it is translucent
Schottky electrode connection.
Further improvement lies in that the Schottky barrier dielectric barrier is SiO2Layer or Al2O3Layer.
Further improvement lies in that the translucent Schottky electrode shape is rectangular, round or interdigitation.
Further improvement lies in that the translucent Schottky electrode selects Ni/Au electrode, Pt/Au electrode or graphene
Electrode.
Further improvement lies in that the dielectric passivation layer is SiO2Layer.
Further improvement lies in that the N-type β-Ga2O3Substrate with a thickness of 350 μm, carrier concentration is 5 × 1017cm-3, the unintentional doping β-Ga2O3Light absorbing layer with a thickness of 1 μm, the Schottky barrier dielectric barrier with a thickness of
2nm, the ohmic electrode layer with a thickness of 2 μm, the translucent Schottky electrode with a thickness of 5nm, the medium is blunt
Change layer with a thickness of 150nm, the contact electrode with a thickness of 2 μm.
Further improvement lies in that the ohmic electrode layer, translucent Schottky electrode and contact electrode are to use
Electron beam evaporation method is made.
The principle of the present invention and beneficial effect are: the height for improving Schottky barrier is designed using Schottky barrier barrier layer
Degree reduces the dark current of device and then promotion device detection is micro- so that thermal noise and dislocation etc. be inhibited to generate the factor of dark current
The ability of weak signal.The device is not necessarily to etching using vertical structure design simultaneously, so as to avoid etching injury bring device
Integrity problem.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of novel oxidized gallium MIS structure ultraviolet detector of the present invention；
Fig. 2 is traditional gallium oxide ultraviolet detector (a) and a kind of novel oxidized gallium MIS structure ultraviolet detector of the present invention
(b) band structure comparison diagram；
In figure: 101, N-type β-Ga2O3Substrate；102, unintentional doping β-Ga2O3Light absorbing layer；103, Schottky barrier is situated between
Matter barrier layer；104, ohmic electrode layer；105, translucent Schottky electrode；106, dielectric passivation layer；107, electrode is contacted.
Specific embodiment
The application is described in further detail with reference to the accompanying drawing, it is necessary to it is indicated herein to be, implement in detail below
Mode is served only for that the application is further detailed, and should not be understood as the limitation to the application protection scope, the field
Technical staff can make some nonessential modifications and adaptations to the application according to above-mentioned application content.
As shown in Figure 1, the embodiment of the present invention uses N-type β-Ga2O3Substrate 101, with a thickness of 350 μm, substrate carrier concentration
It is 5 × 1017cm-3；In N-type β-Ga2O3The unintentional doping β-Ga of one layer of 1 μ m-thick of extension on substrate 1012O3Light absorbing layer 102；
In unintentional doping β-Ga2O3On light absorbing layer 102, using PECVD (plasma enhanced chemical vapor deposition method) deposition techniques
The SiO of one layer of 2nm thickness2Schottky barrier dielectric barrier 103；
The Ti/Au ohmic electrode layer 104 of 2 μ m-thicks is made at the total back side using electron beam evaporation；Using electricity
Beamlet evaporation production total front makes Pt/Au (2.5nm/2.5nm) translucent Schottky electrode 105；In translucent Xiao
The SiO of 150nm thickness is deposited on special base electrode 1052Dielectric passivation layer 106, dielectric passivation layer 106 play the work of antireflection simultaneously
With；Fairlead (being not marked in figure) is etched using wet chemical etching technique；The Ti/ of 2 μ m-thicks is finally made of electron beam evaporation
Au contacts electrode 107.
Device is designed using the Schottky barrier type structure of vertical structure, reduces etching injury bring device reliability
Problem.One layer of dielectric barrier barrier layer is inserted between metal and semiconductor simultaneously.
As shown in Fig. 2, Fig. 2 (a) shows traditional gallium oxide ultraviolet detector (a) band structure figure, Fig. 2 (b) exhibition
What is shown is detector band structure figure of the present invention.It can be seen that the present invention further improves the schottky barrier height of device,
To inhibit the dark current of device, the ability of detection small-signal is improved.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
Limitations on the scope of the patent of the present invention therefore cannot be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to guarantor of the invention
Protect range.
Claims (7)
1. a kind of gallium oxide MIS structure ultraviolet detector, it is characterised in that: including
N-type β-Ga2O3Substrate (101)；
In the N-type β-Ga2O3The unintentional doping β-Ga of substrate (101) front extension2O3Light absorbing layer (102)；
In the unintentional doping β-Ga2O3The Schottky barrier dielectric barrier (103) of light absorbing layer (102) front deposit；
In the N-type β-Ga2O3The ohmic electrode layer (104) of substrate (101) back side production；
In the translucent Schottky electrode (105) of Schottky barrier dielectric barrier (103) front production；
In the dielectric passivation layer (106) of translucent Schottky electrode (105) the front deposit, the dielectric passivation layer (106)
On be etched with the fairlead that can appear translucent Schottky electrode (105)；
In the contact electrode (107) that the position of the fairlead makes, the contact electrode (107) extend to fairlead it is interior and with
Translucent Schottky electrode (105) connection.
2. a kind of gallium oxide MIS structure ultraviolet detector according to claim 1, it is characterised in that: the Schottky gesture
Building dielectric barrier (103) is SiO2Layer or Al2O3Layer.
3. a kind of gallium oxide MIS structure ultraviolet detector according to claim 1, it is characterised in that: translucent Xiao
Special base electrode (105) shape is rectangular, round or interdigitation.
4. a kind of gallium oxide MIS structure ultraviolet detector according to claim 1, it is characterised in that: translucent Xiao
Special base electrode (105) selects Ni/Au electrode, Pt/Au electrode or Graphene electrodes.
5. a kind of gallium oxide MIS structure ultraviolet detector according to claim 1, it is characterised in that: the dielectric passivation
Layer (106) is SiO2Layer.
6. a kind of gallium oxide MIS structure ultraviolet detector according to claim 1, it is characterised in that: the N-type β-Ga2O3
Substrate (101) with a thickness of 350 μm, carrier concentration is 5 × 1017cm-3, the unintentional doping β-Ga2O3Light absorbing layer
(102) with a thickness of 1 μm, the Schottky barrier dielectric barrier (103) with a thickness of 2nm, the ohmic electrode layer
(104) with a thickness of 2 μm, the translucent Schottky electrode (105) with a thickness of 5nm, the thickness of the dielectric passivation layer (106)
Degree be 150nm, it is described contact electrode (107) with a thickness of 2 μm.
7. a kind of gallium oxide MIS structure ultraviolet detector according to claim 1, it is characterised in that: the Ohmic contact
Electrode layer (104), translucent Schottky electrode (105) and contact electrode (107) be using electron beam evaporation method production and
At.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910264632.1A CN109980040A (en) | 2019-04-03 | 2019-04-03 | A kind of gallium oxide MIS structure ultraviolet detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910264632.1A CN109980040A (en) | 2019-04-03 | 2019-04-03 | A kind of gallium oxide MIS structure ultraviolet detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109980040A true CN109980040A (en) | 2019-07-05 |
Family
ID=67082639
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910264632.1A Pending CN109980040A (en) | 2019-04-03 | 2019-04-03 | A kind of gallium oxide MIS structure ultraviolet detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109980040A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111696698A (en) * | 2020-06-22 | 2020-09-22 | 厦门理工学院 | Gallium oxide Schottky isotope battery and preparation method thereof |
| CN112186065A (en) * | 2020-09-08 | 2021-01-05 | 华南理工大学 | MSM type detector based on impurity blocking zone and preparation method thereof |
| CN113193037A (en) * | 2021-04-01 | 2021-07-30 | 北京大学 | Ga2O3Base resonance tunneling diode and preparation method thereof |
| CN113410330A (en) * | 2021-06-22 | 2021-09-17 | 金华紫芯科技有限公司 | Solar blind ultraviolet detector of graphene amorphous gallium oxide film |
| CN114267747A (en) * | 2021-12-21 | 2022-04-01 | 河北工业大学 | Ga having metal gate structure2O3AlGaN/GaN solar blind ultraviolet detector and preparation method thereof |
| CN114709271A (en) * | 2022-03-18 | 2022-07-05 | 中国科学院微电子研究所 | Microstrip detector and preparation method thereof |
| CN115810694A (en) * | 2022-12-19 | 2023-03-17 | 吉林大学 | Low-noise high-response Ga 2 O 3 Avalanche photodiode and preparation method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101997010A (en) * | 2009-08-11 | 2011-03-30 | 元太科技工业股份有限公司 | Digital X-ray detection panel and manufacturing method thereof |
| CN102034902A (en) * | 2010-11-03 | 2011-04-27 | 上海大学 | Method for preparing silicon-based SIS heterojunction photoelectric device |
| CN102832286A (en) * | 2012-09-12 | 2012-12-19 | 中国电子科技集团公司第三十八研究所 | Two-operation-mode ultraviolet detector with vertical structure and preparation method thereof |
| US20150372175A1 (en) * | 2014-06-23 | 2015-12-24 | Zena Technologies, Inc. | Vertical Pillar Structured Infrared Detector and Fabrication Method for the Same |
| CN108878576A (en) * | 2018-07-03 | 2018-11-23 | 中国科学院微电子研究所 | Gallium oxide-based ultraviolet detector |
| CN209675319U (en) * | 2019-04-03 | 2019-11-22 | 南京紫科光电科技有限公司 | A kind of gallium oxide MIS structure ultraviolet detector |
-
2019
- 2019-04-03 CN CN201910264632.1A patent/CN109980040A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101997010A (en) * | 2009-08-11 | 2011-03-30 | 元太科技工业股份有限公司 | Digital X-ray detection panel and manufacturing method thereof |
| CN102034902A (en) * | 2010-11-03 | 2011-04-27 | 上海大学 | Method for preparing silicon-based SIS heterojunction photoelectric device |
| CN102832286A (en) * | 2012-09-12 | 2012-12-19 | 中国电子科技集团公司第三十八研究所 | Two-operation-mode ultraviolet detector with vertical structure and preparation method thereof |
| US20150372175A1 (en) * | 2014-06-23 | 2015-12-24 | Zena Technologies, Inc. | Vertical Pillar Structured Infrared Detector and Fabrication Method for the Same |
| CN108878576A (en) * | 2018-07-03 | 2018-11-23 | 中国科学院微电子研究所 | Gallium oxide-based ultraviolet detector |
| CN209675319U (en) * | 2019-04-03 | 2019-11-22 | 南京紫科光电科技有限公司 | A kind of gallium oxide MIS structure ultraviolet detector |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111696698A (en) * | 2020-06-22 | 2020-09-22 | 厦门理工学院 | Gallium oxide Schottky isotope battery and preparation method thereof |
| CN112186065A (en) * | 2020-09-08 | 2021-01-05 | 华南理工大学 | MSM type detector based on impurity blocking zone and preparation method thereof |
| CN113193037A (en) * | 2021-04-01 | 2021-07-30 | 北京大学 | Ga2O3Base resonance tunneling diode and preparation method thereof |
| CN113410330A (en) * | 2021-06-22 | 2021-09-17 | 金华紫芯科技有限公司 | Solar blind ultraviolet detector of graphene amorphous gallium oxide film |
| CN113410330B (en) * | 2021-06-22 | 2022-07-22 | 金华紫芯科技有限公司 | Solar blind ultraviolet detector for graphene amorphous gallium oxide film |
| CN114267747A (en) * | 2021-12-21 | 2022-04-01 | 河北工业大学 | Ga having metal gate structure2O3AlGaN/GaN solar blind ultraviolet detector and preparation method thereof |
| CN114267747B (en) * | 2021-12-21 | 2023-06-02 | 河北工业大学 | Ga with metal gate structure 2 O 3 AlGaN/GaN solar blind ultraviolet detector and preparation method thereof |
| CN114709271A (en) * | 2022-03-18 | 2022-07-05 | 中国科学院微电子研究所 | Microstrip detector and preparation method thereof |
| CN115810694A (en) * | 2022-12-19 | 2023-03-17 | 吉林大学 | Low-noise high-response Ga 2 O 3 Avalanche photodiode and preparation method thereof |
| CN115810694B (en) * | 2022-12-19 | 2024-10-18 | 吉林大学 | Low-noise and high-response Ga2O3Base avalanche photodiode and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109980040A (en) | A kind of gallium oxide MIS structure ultraviolet detector | |
| CN107863413B (en) | A kind of AlGaN base day blind ultraviolet snowslide heterojunction phototransistor detector and preparation method thereof | |
| CN106847933B (en) | Monolithic integrated ultraviolet-infrared bicolor avalanche photodiode and preparation method thereof | |
| Jabbar et al. | Gallium nitride–based photodiode: a review | |
| CN108305911B (en) | It absorbs, III group-III nitride semiconductor avalanche photodetector of dynode layer separated structure | |
| CN104465853B (en) | Avalanche photodiode and manufacturing method thereof | |
| CN106711253B (en) | A kind of III nitride semiconductor avalanche photodiode detector | |
| CN106571405B (en) | A kind of ultraviolet detector with GaN nano wire array and preparation method thereof | |
| CN102386269B (en) | GaN-based ultraviolet detector with p-i-p-i-n structure and preparation method thereof | |
| CN102332456A (en) | Photodetector integrated device and manufacturing method thereof | |
| CN111244203B (en) | Based on Ga2O3Sunlight blind ultraviolet detector of/CuI heterojunction PN junction | |
| CN104282793A (en) | Three-mesa p-Pi-n structured III-nitride semiconductor avalanche photodetector and preparation method thereof | |
| CN111403505B (en) | Bipolar visible light detector and preparation method thereof | |
| CN108022985A (en) | Extension wavelength mesa avalanche photodide and preparation method thereof | |
| CN108630779B (en) | Silicon carbide detector and preparation method thereof | |
| CN106960885B (en) | A kind of PIN structural UV photodetector and preparation method thereof | |
| CN109686809A (en) | A kind of III nitride semiconductor visible light avalanche photodetector and preparation method | |
| CN109494275A (en) | A kind of AlGaN base solar blind UV electric transistor detector and preparation method thereof | |
| CN110047955A (en) | A kind of AlGaN ultraviolet avalanche photodiode detector and preparation method thereof | |
| CN107452820A (en) | A kind of homogeneity interface two dimension δ doping type PIN ultraviolet detectors | |
| Xie et al. | Large-area solar-blind AlGaN-based MSM photodetectors with ultra-low dark current | |
| Guo et al. | Polarization assisted interdigital AlGaN/GaN heterostructure ultraviolet photodetectors | |
| CN209675319U (en) | A kind of gallium oxide MIS structure ultraviolet detector | |
| CN114678439B (en) | 2DEG ultraviolet detector with symmetrical interdigital structure and preparation method thereof | |
| Chen et al. | Improved performances of InGaN schottky photodetectors by inducing a thin insulator layer and mesa process |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |