CN209675319U

CN209675319U - A kind of gallium oxide MIS structure ultraviolet detector

Info

Publication number: CN209675319U
Application number: CN201920442189.8U
Authority: CN
Inventors: 谢峰; 杨国锋
Original assignee: Nanjing Purple Light Technology Co Ltd
Current assignee: Nanjing Purple Light Technology Co Ltd
Priority date: 2019-04-03
Filing date: 2019-04-03
Publication date: 2019-11-22
Anticipated expiration: 2029-04-03

Abstract

The utility model discloses a kind of gallium oxide MIS structure ultraviolet detectors, including N-type β-Ga₂O₃Substrate, unintentional doping β-Ga₂O₃Light absorbing layer, Schottky barrier dielectric barrier, ohmic electrode layer, translucent Schottky electrode, dielectric passivation layer and contact electrode.The utility model has the advantage of the height of Schottky barrier is improved using the design of Schottky barrier barrier layer, so that thermal noise and dislocation etc. be inhibited to generate the factor of dark current, reduces the dark current of device and then promote the ability of device detection small-signal.The device is not necessarily to etching using vertical structure design simultaneously, so as to avoid etching injury bring device reliability issues.

Description

A kind of gallium oxide MIS structure ultraviolet detector

Technical field

The utility model relates to semiconductor photoelectric device fields, and in particular to a kind of gallium oxide MIS structure ultraviolet detector.

Background technique

Ultraviolet detection technology is the another dual-use detection skill to grow up after infrared and Laser Detection Technique Art.The core of ultraviolet detection technology is to develop highly sensitive ultraviolet detector.Currently used ultraviolet detector includes ultraviolet increasing The ultraviolet detectors such as strong type silicon photoelectric diode, ultraviolet avalanche diode, GaAs and GaP and the purple based on wide bandgap semiconductor External detector.Although the ultraviolet detector technique based on silicon materials and other conventional Group III-V compound semiconductors compared at It is ripe, but since these materials have lesser forbidden bandwidth, corresponding detector, which has to install expensive filter additional, just may be used Selectively to work in ultraviolet band.In addition, being influenced by the larger weight of filter, these detectors are in aerospace etc. The application in field is restricted.

The appearance of semiconductor material with wide forbidden band (forbidden bandwidth > 2.5eV) of new generation, such as: GaN, SiC and Ga₂O₃Deng being The research and application and development of high-performance ultraviolet detector are filled with new vitality.However GaN and SiC material are due to its forbidden bandwidth Corresponding optical detection wavelength is in visible-blind, when carrying out deep ultraviolet detection still by the interference of solar ultraviolet radiation. Although the AlGaN material of high Al contents can work in non-solar-blind band, due to its preparation need to carry out on sapphire it is heterogeneous Extension, biggish lattice mismatch and thermal mismatching cause the sensitive detection parts of preparation by high dark current and low device reliability. In recent years, with the demand of application, Ga₂O₃Investigation of materials increases, the advantage is that it is natural work non-solar-blind band without Install any filtering system additional, however its device dark current is still relatively high, influences it in the detection of faint ultraviolet radioactive object Ability.

Utility model content

The technical problems to be solved in the utility model is to provide a kind of extremely low dark current, without etching and simple process Novel oxidized gallium MIS structure ultraviolet detector.

The utility model achieves the above object through the following technical schemes:

A kind of gallium oxide MIS structure ultraviolet detector, including

N-type β-Ga₂O₃Substrate；

In the N-type β-Ga₂O₃The unintentional doping β-Ga of substrate face extension₂O₃Light absorbing layer；

In the unintentional doping β-Ga₂O₃The Schottky barrier dielectric barrier of light absorbing layer front deposit；

In the N-type β-Ga₂O₃The ohmic electrode layer of substrate back production；

In the translucent Schottky electrode of Schottky barrier dielectric barrier front production；

It is etched with and can show in the dielectric passivation layer of the translucent Schottky electrode front deposit, the dielectric passivation layer Reveal the fairlead of translucent Schottky electrode；

In the contact electrode that the position of the fairlead makes, the contact electrode extend to fairlead it is interior and with it is translucent Schottky electrode connection.

Further improvement lies in that the Schottky barrier dielectric barrier is SiO₂Layer or Al₂O₃Layer.

Further improvement lies in that the translucent Schottky electrode shape is rectangular, round or interdigitation.

Further improvement lies in that the translucent Schottky electrode selects Ni/Au electrode, Pt/Au electrode or graphene Electrode.

Further improvement lies in that the dielectric passivation layer is SiO₂Layer.

Further improvement lies in that the N-type β-Ga₂O₃Substrate with a thickness of 350 μm, carrier concentration is 5 × 10¹⁷cm^-3, the unintentional doping β-Ga₂O₃Light absorbing layer with a thickness of 1 μm, the Schottky barrier dielectric barrier with a thickness of 2nm, the ohmic electrode layer with a thickness of 2 μm, the translucent Schottky electrode with a thickness of 5nm, the medium is blunt Change layer with a thickness of 150nm, the contact electrode with a thickness of 2 μm.

The principles of the present invention and beneficial effect are: improving Schottky barrier using the design of Schottky barrier barrier layer Height, thus inhibit thermal noise and dislocation etc. generate dark current factor, reduce device dark current so that promoted device visit The ability of micrometer weak signal.The device is not necessarily to etching using vertical structure design simultaneously, so as to avoid etching injury bring Device reliability issues.

Detailed description of the invention

Fig. 1 is a kind of structural schematic diagram of novel oxidized gallium MIS structure ultraviolet detector of the utility model；

Fig. 2 is traditional gallium oxide ultraviolet detector (a) and a kind of novel oxidized ultraviolet spy of gallium MIS structure of the utility model Survey the band structure comparison diagram of device (b)；

In figure: 101, N-type β-Ga₂O₃Substrate；102, unintentional doping β-Ga₂O₃Light absorbing layer；103, Schottky barrier is situated between Matter barrier layer；104, ohmic electrode layer；105, translucent Schottky electrode；106, dielectric passivation layer；107, electrode is contacted.

Specific embodiment

The application is described in further detail with reference to the accompanying drawing, it is necessary to it is indicated herein to be, implement in detail below Mode is served only for that the application is further detailed, and should not be understood as the limitation to the application protection scope, the field Technical staff can make some nonessential modifications and adaptations to the application according to above-mentioned application content.

As shown in Figure 1, the utility model embodiment uses N-type β-Ga₂O₃Substrate 101, with a thickness of 350 μm, substrate carrier Concentration is 5 × 10¹⁷cm^-3；In N-type β-Ga₂O₃The unintentional doping β-Ga of one layer of 1 μ m-thick of extension on substrate 101₂O₃Light absorbing layer 102；In unintentional doping β-Ga₂O₃On light absorbing layer 102, using PECVD (plasma enhanced chemical vapor deposition method) technology Deposit the SiO of one layer of 2nm thickness₂Schottky barrier dielectric barrier 103；

The Ti/Au ohmic electrode layer 104 of 2 μ m-thicks is made at the total back side using electron beam evaporation；Using electricity Beamlet evaporation production total front makes Pt/Au (2.5nm/2.5nm) translucent Schottky electrode 105；In translucent Xiao The SiO of 150nm thickness is deposited on special base electrode 105₂Dielectric passivation layer 106, dielectric passivation layer 106 play the work of antireflection simultaneously With；Fairlead (being not marked in figure) is etched using wet chemical etching technique；The Ti/ of 2 μ m-thicks is finally made of electron beam evaporation Au contacts electrode 107.

Device is designed using the Schottky barrier type structure of vertical structure, reduces etching injury bring device reliability Problem.One layer of dielectric barrier barrier layer is inserted between metal and semiconductor simultaneously.

As shown in Fig. 2, Fig. 2 (a) shows traditional gallium oxide ultraviolet detector (a) band structure figure, Fig. 2 (b) exhibition What is shown is the utility model detector band structure figure.It can be seen that the utility model further improves the Schottky gesture of device Height is built, to inhibit the dark current of device, improves the ability of detection small-signal.

Above-described embodiments merely represent several embodiments of the utility model, the description thereof is more specific and detailed, But it should not be understood as limiting the scope of the patent of the utility model.It should be pointed out that for the common of this field For technical staff, without departing from the concept of the premise utility, various modifications and improvements can be made, these all belong to In the protection scope of the utility model.

Claims

1. a kind of gallium oxide MIS structure ultraviolet detector, it is characterised in that: including

N-type β-Ga₂O₃Substrate (101)；

In the N-type β-Ga₂O₃The unintentional doping β-Ga of substrate (101) front extension₂O₃Light absorbing layer (102)；

In the unintentional doping β-Ga₂O₃The Schottky barrier dielectric barrier (103) of light absorbing layer (102) front deposit；

In the N-type β-Ga₂O₃The ohmic electrode layer (104) of substrate (101) back side production；

In the translucent Schottky electrode (105) of Schottky barrier dielectric barrier (103) front production；

In the dielectric passivation layer (106) of translucent Schottky electrode (105) the front deposit, the dielectric passivation layer (106) On be etched with the fairlead that can appear translucent Schottky electrode (105)；

In the contact electrode (107) that the position of the fairlead makes, the contact electrode (107) extend to fairlead it is interior and with Translucent Schottky electrode (105) connection.

2. a kind of gallium oxide MIS structure ultraviolet detector according to claim 1, it is characterised in that: the Schottky gesture Building dielectric barrier (103) is SiO₂Layer or Al₂O₃Layer.

3. a kind of gallium oxide MIS structure ultraviolet detector according to claim 1, it is characterised in that: translucent Xiao Special base electrode (105) shape is rectangular, round or interdigitation.

4. a kind of gallium oxide MIS structure ultraviolet detector according to claim 1, it is characterised in that: translucent Xiao Special base electrode (105) selects Ni/Au electrode, Pt/Au electrode or Graphene electrodes.

5. a kind of gallium oxide MIS structure ultraviolet detector according to claim 1, it is characterised in that: the dielectric passivation Layer (106) is SiO₂Layer.

6. a kind of gallium oxide MIS structure ultraviolet detector according to claim 1, it is characterised in that: the N-type β-Ga₂O₃ Substrate (101) with a thickness of 350 μm, carrier concentration is 5 × 10¹⁷cm^-3, the unintentional doping β-Ga₂O₃Light absorbing layer (102) with a thickness of 1 μm, the Schottky barrier dielectric barrier (103) with a thickness of 2nm, the ohmic electrode layer (104) with a thickness of 2 μm, the translucent Schottky electrode (105) with a thickness of 5nm, the thickness of the dielectric passivation layer (106) Degree be 150nm, it is described contact electrode (107) with a thickness of 2 μm.