CN107342344A - A kind of ultraviolet avalanche probe and preparation method thereof - Google Patents
A kind of ultraviolet avalanche probe and preparation method thereof Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1856—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising nitride compounds, e.g. GaN
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of ultraviolet avalanche probe and preparation method thereof, the detector is nipip structures, is included successively from bottom to top from substrate：P-type layer, the photosensitive absorbed layer of i types, p-type transition zone, i types avalanche layer, n-layer；N-type Ohmic electrode is provided with the n-layer, p-type Ohmic electrode is provided with the p-type layer；The p-type layer be receive incident light structure sheaf described in substrate be light-permeable substrate.Because the present invention provides a kind of new nipip structures, substrate is arranged to transparent material, therefore ultraviolet light can be incident from back, and detection operations are carried out through substrate.Subsequently when carrying out integrated, when detector array is connected with reading circuit thereon by indium post, the detection operations of ultraviolet light are had no effect on.
Description
Technical field
The present invention relates to semiconductor probe technology, more particularly to ultraviolet avalanche probe and preparation method thereof.
Background technology
Ultraviolet light is mostly derived from solar radiation, and Ozone in Atmosphere molecule is that 200~280nm ultraviolet lights have strong absorption to wavelength
Effect, therefore be approximately zero in the ultraviolet radioactive of the adjacent ground surface wave band, i.e. " day is blind " area.And wavelength is 280~400nm purple
After external radiation then passes through air, it is uniformly distributed in earth's surface, i.e. " visible blind " area.Ultraviolet detection technology operates mainly in 200~
400nm wave bands, more important effect is played in military field, scientific research field and civil area.Such as in military field
It can apply to Missile Plume detection and flight guidance；Chemical analysis, bioanalysis and astronomy are mainly used in scientific research field
Learn research etc.；Optic communication and detection of Corona Discharge etc. are mainly used in civil area.
Existing ultraviolet detection technology is broadly divided into two classes, and one kind is the vacuum photomultiplier (PMT) based on photocathode,
Another kind of is all solid state detector based on semiconductor technology.Wherein, PMT has the advantages of high sensitivity, noise is low, but because of it
Volume is big, frangible and be difficult to integrate, and is restricted its development.Develop more ripe silicon (Si) base in semiconductor detector to visit
Device is surveyed, its high sensitivity, integrated level are high, but because it is low-gap semiconductor, being operated in ultraviolet band can largely decline
Subtract its service life.In recent years, as the research to semiconductor material with wide forbidden band, gallium nitrogen (GaN) base ultraviolet detector constantly have
New breakthrough.For example we have proposed a kind of GaN/AlN superlattices avalanche probe (APD), this architecture provides a kind of high
Sensitive snowslide amplification platform, has the advantages that high-gain, low noise.
Fig. 1 is a kind of basic structure schematic diagram of ultraviolet avalanche probe in the prior art.As shown in figure 1, this detection
Device can be pipin structures, and 1st area is p floor, and 2nd area are i floor, and 3rd area are p floor, and 4th area are i floor, and 5th area are n-layer.Wherein, 1st area and 5th area
Pn-junction is formed, is a kind of basic structure of semiconductor devices.2nd area are absorbed layer, and it is wide higher than its forbidden band to be mainly used in absorption energy
The energy of the photon of degree, so as to produce electron hole pair.3rd area are transition zone, are mainly used in electric field controls.4th area are avalanche region, main
It is used for Ionized by Electrons collision, reaches the effect of snowslide.In practical application, ultraviolet avalanche probe also includes substrate, cushion
And electrode.When ultraviolet avalanche probe detects ultraviolet light, electric current can be produced, and by the electrode at both ends by electric signal transmission
Go out, reach the purpose of detection.
It is difficult in practical application although the ultraviolet avalanche probe of prior art can be detected successfully to ultraviolet light
In integrated with reading circuit.As shown in Fig. 2 ultraviolet avalanche probe array is made up of some detectors as shown in Figure 1,
And it is connected by indium post and reading circuit (ROIC, Read Out Inlegrated Circuit).Problem is, reading circuit
For silicon-based electronic circuits chip, itself is light tight.Therefore, when the ultraviolet light normal incidence for needing to detect, reading circuit plate can be made to it
Into blocking, so as to can not normally be detected.
The content of the invention
In view of this, it is an object of the invention to provide a kind of ultraviolet avalanche probe and preparation method thereof, ensureing just
In the case of normal detection operations, the problem of can also avoiding being blocked by reading circuit plate when integrated.
To reach above-mentioned purpose, technical scheme provided by the invention is as follows：
A kind of ultraviolet avalanche probe, it is characterised in that the detector is nipip structures, from substrate from bottom to top successively
Including：
P-type layer, the photosensitive absorbed layer of i types, p-type transition zone, i types avalanche layer, n-layer；
N-type Ohmic electrode is provided with the n-layer, p-type Ohmic electrode is provided with the p-type layer；
The p-type layer is to receive the structure sheaf of incident light；
The substrate is the substrate of light-permeable.
Further, the material of the p-type layer is AlxGa1-xN, wherein 0≤x≤1；
The material of the photosensitive absorbed layer of i types is AlyGa1-yN, wherein 0≤y≤1；
The material of the p-type transition zone is AlzGa1-zN, wherein 0≤z≤1.
The material of the n-layer is AlwGa1-wN, wherein 0≤w≤1.
Further, the material of the i types avalanche layer includes AluGa1-uN and AltGa1-tN, 0≤u≤1,0≤t≤1；
The AluGa1-uN and AltGa1-tTwo kinds of material periodicities of N are arranged alternately, wherein, the AluGa1-uN is potential well
Layer, positioned at the orlop of a cycle, close to the p-type transition zone；The AltGa1-tN is barrier layer, positioned at a cycle
The superiors, close to the n-layer；
The AluGa1-uN energy gap is less than AltGa1-tN energy gap.
Further, the AluGa1-uN and AltGa1-tAlso include stress regulating course Al between NvGa1-vN, wherein, 0≤u
≤v≤t≤1；The stress regulating course AlvGa1-vN energy gap is less than the AltGa1-tN energy gap, and it is more than institute
State AluGa1-uN energy gap.
Further, the stress regulating course thickness is D (D>0), stress regulating course AlvGa1-vComponent v is variable in N, u
≤ v≤t, the positional distance current period lower surface distance in stress regulating course where the component is d (0≤d≤D), then d is from 0
When being incremented to D, v increases to t from u, and component v is more than 0 with the first derivative of distance d change function.
The present invention also provides a kind of preparation method of ultraviolet avalanche probe, and suitable for above-mentioned detector, this method includes：
One layer of p-type layer is grown on the basis of substrate；
One layer of photosensitive absorbed layer of i types is grown in the p-type layer；
One layer of p-type transition zone is grown on the photosensitive absorbed layer of i types；
One layer of i type avalanche layer is grown on the p-type transition zone；
One layer of n-layer is grown on the i types avalanche layer；
N-type Ohmic electrode is provided with the n-layer, p-type Ohmic electrode is provided with p-type layer；The p-type layer is reception
The structure sheaf of incident light；The substrate is the substrate of light-permeable.
Further, the material of the p-type layer is AlxGa1-xN, wherein 0≤x≤1；
The material of the photosensitive absorbed layer of i types is AlyGa1-yN, wherein 0≤y≤1；
The material of the p-type transition zone is AlzGa1-zN, wherein 0≤z≤1；
The material of the n-layer is AlwGa1-wN, wherein 0≤w≤1.
Further, the material of the i types avalanche layer includes AluGa1-uN and AltGa1-tN, 0≤u≤1,0≤t≤1；
The AluGa1-uN and AltGa1-tTwo kinds of material periodicities of N are arranged alternately, wherein, the AluGa1-uN is potential well
Layer, positioned at the orlop of a cycle, close to the p-type transition zone；The AltGa1-tN is barrier layer, positioned at a cycle
The superiors, close to the n-layer；
The AluGa1-uN energy gap is less than AltGa1-tN energy gap.
Further, the AluGa1-uN and AltGa1-tAlso include stress regulating course Al between NvGa1-vN, wherein, 0≤u
≤v≤t≤1；The stress regulating course AlvGa1-vN energy gap is less than the AltGa1-tN energy gap, more than described
AluGa1-uN energy gap.
Further, the stress regulating course thickness is D (D>0), stress regulating course AlvGa1-vComponent v is variable in N, u
≤ v≤t, the positional distance current period lower surface distance in stress regulating course where the component is d (0≤d≤D), then d is from 0
When being incremented to D, v increases to t from u, and component v is more than 0 with the first derivative of the change function of thickness d.
As can be seen here, a kind of ultraviolet avalanche probe provided by the invention and preparation method thereof is a kind of new due to providing
Nipip structures, and substrate is arranged to transparent material, therefore, ultraviolet light can be incident from back, is visited through substrate
Survey work.Subsequently when carrying out integrated, when detector array is connected with reading circuit thereon by indium post, have no effect on ultraviolet
The detection operations of light.
Brief description of the drawings
Fig. 1 is a kind of basic structure schematic diagram of ultraviolet avalanche probe in the prior art.
Fig. 2 is that existing ultraviolet avalanche probe integrates situation schematic diagram.
Fig. 3 is the preparation method flow chart of the ultraviolet avalanche probe of the embodiment of the present invention one.
Fig. 4 is the structural representation of ultraviolet avalanche probe in the embodiment of the present invention one.
Fig. 5 is the schematic diagram that situation is integrated using the ultraviolet avalanche probe of the present invention program.
Fig. 6 is i types avalanche layer internal structure schematic diagram in the ultraviolet avalanche probe of prior art.
Fig. 7 is existing i types avalanche layer energy band diagram.
Fig. 8 is by the structure chart of infiltration inside existing i types avalanche layer.
Fig. 9 is the new i type avalanche layer cut-away views designed in the embodiment of the present invention two.
Figure 10 is a kind of embodiment of the new i types avalanche layer of the embodiment of the present invention two.
Figure 11 is a kind of energy band diagram of specific implementation of the new i types avalanche layer of the embodiment of the present invention two.
Figure 12 is the method flow diagram of the embodiment of the present invention three.
Figure 13 is ultraviolet avalanche probe structural representation prepared by the embodiment of the present invention three.
Figure 14 is the method flow diagram of the embodiment of the present invention four.
Figure 15 is ultraviolet avalanche probe structural representation prepared by the embodiment of the present invention four.
Embodiment
For the objects, technical solutions and advantages of the present invention are more clearly understood, develop simultaneously embodiment with reference to the accompanying drawings, right
The present invention is described in further detail.
The embodiment of the present invention provides a kind of new ultraviolet avalanche probe.The detector has redesigned structure so that needs
The light to be detected can be incident from the back of substrate side, while reaching the effect of detection.Entered using such detector
When row is integrated, occlusion issue of the reading circuit to light can be avoided.
Fig. 3 is the preparation method flow chart of the ultraviolet avalanche probe of this implementation one.As shown in figure 3, the preparation method bag
Include：
Step 301, one layer of p-type layer is grown on the basis of substrate.Certainly, in actual applications would generally on substrate Mr.
Long one layer of cushion, this is well known to a person skilled in the art technology, in the present invention without especially emphasizing.
Step 302, one layer of photosensitive absorbed layer of i types is grown in the p-type layer.
Step 303, one layer of p-type transition zone is grown on the photosensitive absorbed layer of i types.
Step 304, one layer of i type avalanche layer is grown on the p-type transition zone.
Step 305, one layer of n-layer is grown on the i types avalanche layer.
Fig. 4 is the structural representation for the ultraviolet avalanche probe prepared according to the above method.As shown in figure 4, the detection
Device is nipip structures, is included successively from bottom to top from substrate：P-type layer, low temperature buffer layer, the photosensitive absorbed layer of i types, p-type transition
Layer, i types avalanche layer, n-layer.One layer of cushion is had in practical application, on substrate, n-type Ohmic electrode, p are provided with n-layer
P-type Ohmic electrode is provided with type layer.Wherein, p-type layer and n-layer form pn-junction, are the most bases that semiconductor possesses electric conductivity
This structure.The photosensitive absorbed layer of i types is mainly used in absorbing energy of the energy higher than the photon of its energy gap, produces electron hole
It is right.P-type transition zone, is mainly used in electric field controls.I type avalanche layers are mainly used in Ionized by Electrons collision, reach the effect of snowslide.
It should be noted that the substrate in the embodiment of the present invention one is the substrate of light-permeable, and p-type layer is incident to receive
The structure sheaf of light.The incident light described here that receives is meant that, in this nipip structure, p-type layer is to enter to come at first
Structure sheaf.That is, in the embodiment of the present invention one, detected ultraviolet light will pass through substrate directive detector, i.e. this hair
Bright described " back incident-type ".UV light permeability substrate, cushion and p-type layer are irradiated to the photosensitive absorbed layer of i types.The photosensitive suction of i types
Receive layer to produce under action of ultraviolet light, electron hole pair will be produced, electronics transports to n-type electrode direction, enters by p-type transition zone
Enter i type avalanche layers, caused hole transports to p-type electrode direction.Snowslide is electronically activated in i type avalanche layers, produces a large amount of electricity
Sub- hole pair.Caused electronics continues to transport to n-type electrode direction, and caused hole continues to transport to p-type electrode direction, is formed
Electric current, so as to successfully be detected to ultraviolet light.
In practical application, the material for preparing ultraviolet light detector may be different, can use AlGaN ternary alloy three-partalloys.Need
Illustrate, AlGaN ternary alloy three-partalloys described here not necessarily include these three elements, can also be according to the difference of component
The combination of the binary such as AlN, GaN, AlGaN or ternary.It is different with the component of element below in order to clearly show that the material of different layers
To make a distinction.Such as：
The material of p-type layer is AlxGa1-xN, wherein 0≤x≤1；
The material of the photosensitive absorbed layer of i types is AlyGa1-yN, wherein 0≤y≤1；
The material of p-type transition zone is AlzGa1-zN, wherein 0≤z≤1；
The material of i type avalanche layers includes AluGa1-uN and AltGa1-tN, 0≤u≤1,0≤t≤1, wherein, AluGa1-uN and
AltGa1-tTwo kinds of material periodicities of N are arranged alternately；
The material of n-layer is AlwGa1-wN, wherein 0≤w≤1.
In practical application, the selection of other additional level materials of detector can also use AlGaN ternary alloy three-partalloys, herein
Repeat no more.But should be noted that substrate can be the material of heterogeneous or homogeneity light-permeable.For example substrate can be indigo plant
The transparent foreign substrate such as jewel, carborundum, or be the transparent homo-substrates such as GaN, AlN, or after being thinned by technique
The non-transparent materials such as the silicon single crystal of light-permeable.No matter which kind of material substrate selects, as long as can be with printing opacity, it is allowed to which what need to be detected is ultraviolet
Light passes through substrate, is not limited by material recited herein.
Low temperature buffer layer thickness generally could be arranged to 10nm~5 μm, and the thickness of p-type layer is 10nm~1 μm, and i types are photosensitive
The thickness of absorbed layer is 1nm~1 μm, and the thickness of p-type transition zone is 10nm~1 μm, the periodicities of i type avalanche layers for 1~100 it
Between, n-layer thickness is 10nm~5 μm.
Using the technical scheme of the embodiment of the present invention one, ultraviolet avalanche probe is arranged to nipip structures, substrate is set
For the substrate of light-permeable.As shown in figure 5, ultraviolet light is no longer as in the prior art from forward entrance, but carried on the back from substrate it is incident,
By the reception incident light of lowermost layer.Therefore, if it is desirable to integrated, it is possible to pass through indium post and reading circuit phase thereon
Even, both realized integrated, and turn avoid circuit board and detector is blocked.
Embodiment two
On the basis of embodiment one, inventor also found：During i type avalanche layers are grown, different structures is set
Meter mode can influence the gain effect of detector.Fig. 6 is i type avalanche layer internal structures in ultraviolet avalanche probe in the prior art
Schematic diagram.As shown in fig. 6, existing i types avalanche layer includes AluGa1-uN and AltGa1-tN (0≤u≤1,0≤t≤1), AluGa1-uN
And AltGa1-tTwo kinds of material periodicities of N are arranged alternately.Wherein, AluGa1-uN is potential well layer, AltGa1-tN is barrier layer, potential barrier
Layer is close to substrate.Assuming that u=0, t=1, i.e. AluGa1-uN is GaN, AltGa1-tN is AlN.That is, two kinds of materials of GaN and AlN
Material is periodically arranged alternately, and GaN energy gap is less than AlN energy gap.This design method is likely to cause decrease
The gain of detector.Its reason is：Light induced electron caused by flashlight drifts about under electric field driven enters avalanche region, then electricity
Son motion in GaN Γ paddy obtains 2eV energy, when entering back into AlN, from the conservation of energy, reaches AlN Γ paddy paddy
Bottom.Then motion obtains other 2eV energy in AlN Γ paddy.In the motion of a cycle, electronics is exceeded
4eV energy, and transported always in Γ paddy, therefore equivalent Γ paddy depth is more than 4eV., can when electronics is returned in GaN
Expeditiously to trigger dissociative collisions.
It is described in further detail with reference to figure 7, the broken line above Fig. 7 represents conduction band, and broken line below represents valence band.Electronics
From the GaN potential well layers in N cycles in the presence of electric field, into the AlN barrier layers (energy gap 6.2eV) in N cycles, obtain
Energy more than 4eV enters the GaN potential well layers (energy gap 3.4eV) in the N+1 cycle, and its energy is assigned in DC Electric Field
To GaN ionization threshold value (5.3eV), dissociative collisions occur in GaN.Hereafter, electronics is crossed the N+1 weeks under electric field action
Phase barrier layer AlN, then the GaN potential well layers the N+2 cycle occur dissociative collisions, and with this periodically dissociative collisions,
It is finally reached the effect of snowslide.
And problem is, during i type avalanche layers are prepared, in each cycle in growing AIN on the GaN of relaxation, by
One layer of AlGaN permeable formation can be formed between growth temperature and lattice mismatch, the AlN and the GaN in N+1 cycles in N cycles, is oozed
The energy gap of permeable layers is between GaN and AlN.Fig. 8 is by the structure chart of infiltration inside i types avalanche layer.As shown in figure 8,
During electronics is from AlN barrier layers into GaN potential well layers, due to the presence of permeable formation, the energy of electronics is likely to be dissipated
Penetrate, be not enough to that dissociative collisions occur in GaN potential well layers, so as to reduce the gain of ultraviolet avalanche probe.
The problem of inventor exists for prior art, it is further proposed that a kind of new i type avalanche layers.As shown in figure 9, should
I types avalanche layer includes AluGa1-uN and AltGa1-tN (0≤u≤1,0≤t≤1), AluGa1-uN and AltGa1-tTwo kinds of material weeks of N
Phase property is arranged alternately.Wherein, AluGa1-uN is potential well layer, AltGa1-tN is barrier layer, and potential well layer is close to substrate.AluGa1-uN and
AltGa1-tAlso include stress regulating course Al between NvGa1-vN,0≤u≤v≤t≤1.Stress regulating course AlvGa1-vN forbidden band is wide
Degree is less than the AltGa1-tN energy gap, more than the AluGa1-uN energy gap.
Figure 10 is a kind of embodiment of i types snowslide Rotating fields described in Fig. 9.As shown in Figure 10, for convenience of description, it is assumed that u
=0, t=1, i.e. AluGa1-uN is GaN, AltGa1-tN is AlN.GaN is potential well layer, and AlN is barrier layer, close with GaN in the cycle
Substrate.GaN, rear growing AIN are first grown in a cycle.Due to growth temperature and lattice mismatch, in the case of GaN relaxation
During growing AIN, AlGaN stress regulating courses will be formed between the GaN and the AlN in N cycles in N cycles.Figure 11 is Figure 10 institutes
Show the energy band diagram of i type avalanche layers.From Figure 11 it is recognised that electronics is introduced into GaN potential well layers from p-type transition zone, in electric field action
Lower acquisition energy.One skilled in the art will appreciate that the energy gap of AlN barrier layers is much larger than the energy gap of GaN potential well layers, electricity
Son is difficult directly to enter AlN barrier layers from GaN potential well layers.In the present embodiment, one is included between GaN potential well layers and AlN barrier layers
AlGaN stress regulating courses.Because the energy gap of AlGaN stress regulating courses is less than the energy gap of AlN barrier layers, its barrier is small
In AlN barrier layers, electronics is easier to enter AlGaN stress regulating courses.Under electric field action, electronics continues to obtain energy, enters
AlN barrier layers.Now, because AlN energy gap is 6.2eV, the energy of electronics is still not enough to bring it about dissociative collisions.
When GaN potential well layer of the electronics from AlN barrier layers into next cycle, its energy is easier to the ionization threshold value for reaching GaN
(5.3eV).Unlike the prior art, the present embodiment redesigns the band structure of superlattices avalanche region, improves electronics
Transport, reduce its probability scattered, so as to further improve the dissociative collisions coefficient of electronics, and then improve the increasing of detector
Benefit.
That is, in the present embodiment electronics in each cycle from GaN potential well layers to AlGaN stress regulating courses, then to AlN
Barrier layer all progressively obtains energy, and dissociative collisions occur in the GaN potential well layers of next cycle, is finally reached the effect of snowslide
Fruit, improve the gain of detector.
Stress regulating course can be because of growth temperature and lattice mismatch and self-assembling formation or in N cycles GaN and
One layer of AlGaN is specially designed between N cycles AlN.In addition, in order to preferably help electronics to enter AlN potential barriers from GaN potential well layers
Layer, can also be arranged to gradual change by the component of AlGaN stress regulating courses.Assuming that the component of AlGaN stress regulating courses utilizes change
Measure v to represent, Al is expressed as the material at d away from the stress regulating course lower surface vertical range in the cyclevGa1-vN(0≤u≤v
≤t≤1).When d increases to the thickness D of stress regulating course from 0, v increases to t from u.I.e.：Al components are with stress in stress regulating course
The first derivative of the change function of regulating course thickness d is more than 0.Certainly, in practical application Al components how in stress regulating course
How not fixed mode is changed, as long as increasing to potential well layer from potential well layer.AlGaN stress regulating courses are set as requested
Put some cycles, for example 1~100 cycle can be set, the thickness in each cycle is 1nm~1 μm.
The present embodiment can also meet gain requirement using the periodicity set, without making ultraviolet avalanche probe
Geiger mode angular position digitizer is operated in, but is operated in linear model, to reduce circuit complexity.It is one skilled in the art will appreciate that purple
Outer avalanche probe undergoes non-ionization area, monopole ionization area and bipolar ionization area during reversed bias voltage is from small become greatly.Its
In, in monopole ionization area, device can be operated under constant bias, and gain stabilization, this mode of operation is called linear work mould
Formula.The ratio of gains of the existing ultraviolet avalanche probe under linear model it is relatively low, it is necessary to by bias voltage be placed in breakdown voltage it
On trigger bipolar ionization.Because avalanche process overlaps to form positive feedback loop to both direction, gain is very big, but simultaneously
Device can not be stably operated on breakdown voltage, it is necessary to periodically device voltage is reduced under breakdown point to be quenched
Snowslide, this mode of operation are called Geiger mode angular position digitizer.Therefore, existing ultraviolet avalanche probe always needs to quench circuit to detection
State is controlled.If integrated to detector, with the increase of probe unit, quenching circuit will be more complicated.Moreover,
Due to quenching the limitation in cycle, Geiger mode angular position digitizer cannot be distinguished by number of photons, and the interval opened twice is longer.This is due to that detector is opened
Carrier has been captured when opening, it is necessary to which the time gradually discharges.If interval time is too short, the carrier of previous window initiation
Snowslide pulse can be produced in next window, cause dark counting, i.e. afterpulsing effects.
And the structure of the i type avalanche layers of the back of the body incidence designed in the present embodiment, it is big using conduction band difference between GaN and AlN
(2eV), and the characteristics of valence band difference small (0.7eV), i.e., electronics transports in conduction band only needs the extra electric field can of very little to reach
The threshold value of dissociative collisions.Therefore, under existing fringing field, only dissociative collisions, i.e. monopole ionization occur for electrons.So, from above-mentioned
Illustrate that ultraviolet avalanche probe is operated in linear operation mode it is recognised that in the case of monopole ionization.As for detector
Gain then can be with the increase exponentially property growth of the periodicity of i type avalanche layers.That is, utilize the present embodiment design
I type snowslide Rotating fields, detector reach high-gain under linear operation mode, only by controlling cycle number can.Such as：
Assuming that after dissociative collisions occur for each cycle of i type avalanche layers, the quantity of carrier is changed into 2 times, then, if 10 week
Phase, its gain is up to 1000 times (2^10)；20 cycles, gain reach 1000000 times (2^20), by that analogy.
In a word, the present embodiment two re-starts design on the basis of embodiment one to the internal structure of i type avalanche layers,
New stress regulating course avoids carrier scattering, there is provided the ability of its transition so that detector is easier that dissociative collisions occur.
Further, because detector can be operated in linear model, without quenching circuit, in the case where ensureing high-gain, reduce
Circuit complexity, the defects of avoiding cannot be distinguished by number of photons.
Embodiment three
In order to which the present invention program is better described, a kind of more specifically embodiment is set forth below.Figure 12 is this implementation
The method flow diagram of example three, Figure 13 are the ultraviolet avalanche probe structural representations prepared using this method.Assuming that：The present embodiment
Material by the use of this light-permeable of sapphire is used as substrate；P-type layer AlxGa1-xX=0 in N；The photosensitive absorbed layer Al of i typesyGa1-yN
In y=0；P-type transition zone AlzGa1-zZ=0 in N；The material of i type avalanche layers includes AluGa1-uN and AltGa1-tN, wherein u
=0, as Potential well layer materials, t=1, as abarrier layer material；N-layer AlwGa1-wW=0 in N.
In addition, the present embodiment also uses metallo-organic compound chemical gaseous phase deposition (MOCVD) method, and utilize trimethyl
Gallium (TMGa) is used as gallium source, high purity N H3As nitrogen source, two luxuriant magnesium make p-type dopant.In practical application, detector mistake is prepared
Journey also needs to etch table top, depositing electrode and the step such as is passivated, and its method is same as the prior art, does not repeat herein.
With reference to figure 12 and 13, the preparation method of the present embodiment three includes：
Step 1201：In 2 μm of GaN low temperature buffer layers of Grown one layer, doping concentration is about 1019cm-3。
Step 1202：One layer of 100nm p-type GaN is grown on the cushion, doping concentration is about 1019cm-3。
Step 1203：The one layer of 300nm photosensitive absorbed layers of i types GaN are grown on the p-type GaN.
Step 1204：One layer of 16nm p-type GaN transition layer, doping concentration are grown on the photosensitive absorbed layers of the i types GaN
About 1019cm-3。
Step 1205：Make silicon source using trimethyl aluminium (TMAl), 5 cycle i type avalanche layers, i types are grown on p-type transition zone
Avalanche layer includes GaN and AlN, and two kinds of material periodicities alternating growths, wherein GaN thickness are 10nm, and AlN thickness is 20nm；This
I types avalanche layer described in step only has two layers, not including stress regulating course, falls within superlattices dynode layer, can also serve as
The snowslide amplification region of photo-generated carrier.
Step 1206：One layer of 500nm of growth GaN is about as n-layer, its doping concentration on the i types avalanche layer
1019cm-3。
In practical application, it can also continue to carve depth on surface using inductively coupled plasma (ICP) lithographic technique
For 1200nm table top, layer of Ni/Au electrodes, thermal annealing, in n-type are deposited in p-type layer using electron beam evaporation (EB) technology
Layer one layer of Cr/Au electrode of deposition, 200nm SiO is then deposited on table top using PECVD technique2Passivation layer.
The embodiment of the present invention make use of transparent sapphire as substrate, and photosensitive growing p-type layer, i types successively thereon
Absorbed layer, p-type transition zone, i types avalanche layer, n-layer, i.e. nipip structures.So, when ultraviolet light incides the spy from the substrate back of the body
When surveying in device, UV light permeability Sapphire Substrate and GaN low temperature buffer layers are irradiated to p-type layer, and itself forbidden band of p-type layer absorptance is wide
The high photon of energy corresponding to degree, the not low photon of energy corresponding to absorptance itself energy gap.The low photon of energy will be saturating
P-type layer is crossed to be absorbed by the photosensitive absorbed layer of i types.The photosensitive absorbed layer of i types is produced under action of ultraviolet light, will produce electron hole pair,
Electronics transports to n-type electrode direction, enters i type avalanche layers by p-type transition zone.I type avalanche layers are the superlattices for having 5 cycles
Area, alternately including two kinds of GaN and AlN, and the triggering avalanche in GaN, produce a large amount of electron hole pairs.Caused electronics continues
Being transported to n-type electrode (Cr/Au) direction, caused hole continues to transport to p-type electrode (Ni/Au) direction, forms electric current, so as to
Successfully ultraviolet light is detected.
Example IV：
Specifically enumerate another embodiment again below.Figure 14 is the method flow diagram of the present embodiment four, and Figure 15 is to utilize to be somebody's turn to do
Ultraviolet avalanche probe structural representation prepared by method.Assuming that：The present embodiment by the use of this transparent material of sapphire as
Substrate, p-type layer AlxGa1-xX=0.4 in N；The photosensitive absorbed layer Al of i typesyGa1-yY=0.4 in N；P-type transition zone AlzGa1-zN
In z=0.4；The material of i type avalanche layers includes AluGa1-uN and AltGa1-tN, wherein u=0, as Potential well layer materials, t=1,
As abarrier layer material；N-layer AlwGa1-wW=0 in N.
Using metallo-organic compound chemical gaseous phase deposition (MOCVD) method, trimethyl gallium (TMGa) is used as gallium source, high-purity
Spend NH3As nitrogen source, two luxuriant magnesium make p-type dopant.
Step 1401：In Grown 20nm Al0.4Ga0.6N low temperature buffer layers.
Step 1402：One layer of 300nm p-type Al is grown on above-mentioned cushion0.4Ga0.6N, doping concentration are about 1019cm-3。
Step 1403：In p-type Al0.4Ga0.6One layer of 300nm i types Al is deposited on N layers0.4Ga0.6The photosensitive absorbed layers of N.
Step 1404：In i types Al0.4Ga0.6One layer of 16nm p-type Al is deposited on the photosensitive absorbed layers of N0.4Ga0.6N transition zones,
Doping concentration is about 1019cm-3。
Step 1405：On p-type transition zone, i types GaN (the 7nm)/Al in 10 cycles is grown0.4Ga0.6N(5nm)/AlN
Snowslide amplification region of (8nm) the superlattices dynode layer as photo-generated carrier.
Step 1406：Make n-type dopant using silane, in i types GaN (7nm)/Al0.4Ga0.6N (5nm)/AlN (8nm) is super
One layer of 500nm n-type GaN layer is grown on lattice dynode layer, doping concentration is about 1019cm-3。
In practical application, it can also continue to carve depth on surface using inductively coupled plasma (ICP) lithographic technique
For 1.5 μm of table top, layer of Ni/Au electrodes, thermal annealing, in n-layer are deposited in p-type layer using electron beam evaporation (EB) technology
One layer of Cr/Au electrode is deposited, then deposits 200nm SiO on table top using PECVD technique2Passivation layer.
Equally, the embodiment of the present invention make use of transparent sapphire as substrate, and grow p-type layer, i types successively thereon
Photosensitive absorbed layer, p-type transition zone, i types avalanche layer, n-layer, i.e. nipip structures.When ultraviolet light incides the detection from the substrate back of the body
When in device, UV light permeability Sapphire Substrate and GaN low temperature buffer layers are irradiated to p-type layer, itself energy gap of p-type layer absorptance
The high photon of corresponding energy, the not low photon of energy corresponding to absorptance itself energy gap.The low photon of energy will transmit through p
Type layer is absorbed by the photosensitive absorbed layer of i types.The photosensitive absorbed layer of i types is produced under action of ultraviolet light, will produce electron hole pair, electronics
Transported to n-type electrode direction, enter i type avalanche layers by p-type transition zone.I type avalanche layers are the regions of superlattice for having 10 cycles,
Alternately GaN (7nm)/Al0.4Ga0.6N (5nm)/three kinds of AlN (8nm), and the triggering avalanche in GaN, produce a large amount of electron holes
It is right.Caused electronics continues to transport to n-type electrode (Cr/Au) direction, and caused hole is continued to p-type electrode (Ni/Au) direction
Transport, form electric current, so as to successfully be detected to ultraviolet light.
It is emphasized that the i type avalanche layers of the present embodiment include stress regulating course, its energy gap be in GaN and
Between AlN, electronics is not only set to be more prone to transit to AlN from GaN, and detector can be operated in linear model, without quenching
Ignition circuit, the complexity of circuit can be greatly reduced.
Although the present invention only gives the structure of a formula, the core content of the present invention is in back incident-type
In the preparation of the ultraviolet avalanche probe of AlGaN base Compositional Superlattice structures, as long as being related to back incident-type AlGaN base Compositional Superlattices
The back incident-type detector of material is the content that the present invention includes.
It is described above that further detailed description has been carried out to the purpose of the present invention, technical scheme and beneficial effect, answer
Understand, described above to be not intended to limit the invention, within the spirit and principles of the invention, that is done any repaiies
Change, equivalent substitution, improvement etc., should be included in the scope of the protection.
Claims (10)
1. a kind of ultraviolet avalanche probe, it is characterised in that the detector is nipip structures, is wrapped successively from bottom to top from substrate
Include：
P-type layer, the photosensitive absorbed layer of i types, p-type transition zone, i types avalanche layer, n-layer；
N-type Ohmic electrode is provided with the n-layer, p-type Ohmic electrode is provided with the p-type layer；
The p-type layer is to receive the structure sheaf of incident light；
The substrate is the substrate of light-permeable.
2. detector according to claim 1, it is characterised in that
The material of the p-type layer is AlxGa1-xN, wherein 0≤x≤1；
The material of the photosensitive absorbed layer of i types is AlyGa1-yN, wherein 0≤y≤1；
The material of the p-type transition zone is AlzGa1-zN, wherein 0≤z≤1.
The material of the n-layer is AlwGa1-wN, wherein 0≤w≤1.
3. detector according to claim 2, it is characterised in that
The material of the i types avalanche layer includes AluGa1-uN and AltGa1-tN, 0≤u≤1,0≤t≤1；
The AluGa1-uN and AltGa1-tTwo kinds of material periodicities of N are arranged alternately, wherein, the AluGa1-uN is potential well layer, position
In the orlop of a cycle, close to the p-type transition zone；The AltGa1-tN is barrier layer, positioned at the most upper of a cycle
Layer, close to the n-layer；
The AluGa1-uN energy gap is less than AltGa1-tN energy gap.
4. detector according to claim 3, it is characterised in that
The AluGa1-uN and AltGa1-tAlso include stress regulating course Al between NvGa1-vN, wherein, 0≤u≤v≤t≤1；It is described
Stress regulating course AlvGa1-vN energy gap is less than the AltGa1-tN energy gap, and it is more than the AluGa1-uN taboo
Bandwidth.
5. detector according to claim 4, it is characterised in that
The stress regulating course thickness is D (D>0), stress regulating course AlvGa1-vComponent v is variable in N, u≤v≤t, the component
Positional distance current period lower surface distance in the stress regulating course of place is d (0≤d≤D), then d from 0 be incremented to D when, v is from u
Increase to t, component v is more than 0 with the first derivative of distance d change function.
6. a kind of preparation method of ultraviolet avalanche probe, suitable for the detector described in claim 1, it is characterised in that should
Method includes：
One layer of p-type layer is grown on the basis of substrate；
One layer of photosensitive absorbed layer of i types is grown in the p-type layer；
One layer of p-type transition zone is grown on the photosensitive absorbed layer of i types；
One layer of i type avalanche layer is grown on the p-type transition zone；
One layer of n-layer is grown on the i types avalanche layer；
N-type Ohmic electrode is provided with the n-layer, p-type Ohmic electrode is provided with p-type layer；The p-type layer is incident to receive
The structure sheaf of light；The substrate is the substrate of light-permeable.
7. according to the method for claim 6, it is characterised in that
The material of the p-type layer is AlxGa1-xN, wherein 0≤x≤1；
The material of the photosensitive absorbed layer of i types is AlyGa1-yN, wherein 0≤y≤1；
The material of the p-type transition zone is AlzGa1-zN, wherein 0≤z≤1；
The material of the n-layer is AlwGa1-wN, wherein 0≤w≤1.
8. according to the method for claim 7, it is characterised in that
The material of the i types avalanche layer includes AluGa1-uN and AltGa1-tN, 0≤u≤1,0≤t≤1；
The AluGa1-uN and AltGa1-tTwo kinds of material periodicities of N are arranged alternately, wherein, the AluGa1-uN is potential well layer, position
In the orlop of a cycle, close to the p-type transition zone；The AltGa1-tN is barrier layer, positioned at the most upper of a cycle
Layer, close to the n-layer；
The AluGa1-uN energy gap is less than AltGa1-tN energy gap.
9. according to the method for claim 8, it is characterised in that
The AluGa1-uN and AltGa1-tAlso include stress regulating course Al between NvGa1-vN, wherein, 0≤u≤v≤t≤1；It is described
Stress regulating course AlvGa1-vN energy gap is less than the AltGa1-tN energy gap, more than the AluGa1-uN forbidden band
Width.
10. according to the method for claim 9, it is characterised in that
The stress regulating course thickness is D (D>0), stress regulating course AlvGa1-vComponent v is variable in N, u≤v≤t, the component
Positional distance current period lower surface distance in the stress regulating course of place is d (0≤d≤D), then d from 0 be incremented to D when, v is from u
Increase to t, component v is more than or equal to 0 with the first derivative of distance d change function.
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| CN109980039A (en) * | 2019-04-04 | 2019-07-05 | 南通大学 | A kind of high-temperature stability ultraviolet avalanche photodetector and preparation method thereof |
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