CN109148623B - AlGaN-based avalanche photodiode with low noise and preparation method thereof - Google Patents
AlGaN-based avalanche photodiode with low noise and preparation method thereof Download PDFInfo
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- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title abstract description 5
- 238000010521 absorption reaction Methods 0.000 claims abstract description 17
- 238000005530 etching Methods 0.000 claims abstract description 13
- 238000002161 passivation Methods 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 7
- 230000005684 electric field Effects 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 2
- 230000001629 suppression Effects 0.000 abstract description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000825 ultraviolet detection Methods 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
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- 229960001701 chloroform Drugs 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
- H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
- H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
Abstract
The invention discloses an AlGaN-based avalanche photodiode with low noise and a preparation method thereof0.45Ga0.55N layer, N-type Al0.45Ga0.55N layer, multiplication region unintentionally doped AlN layer, p-type Al0.45Ga0.55N layer, weak p-type Al in absorption region0.45Ga0.55N layer, absorption region p-type Al0.45Ga0.55An N layer, a p-type GaN cap layer; on the p-type GaN cap layer and the n-type Al0.45Ga0.55P-type and N-type ohmic contact electrodes are respectively arranged on the N layer; a passivation layer covering the etched n-type Al0.45Ga0.55And protecting the etching table-board on the table-board of the N layer. The device has the greatest advantage of utilizing weak p-type Al0.45Ga0.55The N layer is used as an absorption region, and the AlN is used as a multiplication region, so that the excessive noise of the AlGaN-based avalanche diode can be effectively reduced, the signal-to-noise ratio of the device is improved, and the ultraviolet suppression ratio of the device is improved.
Description
Technical Field
The invention relates to an ultraviolet detector, in particular to an AlGaN-based avalanche photodiode with low noise and a preparation method thereof.
Background
At present, the AlGaN-based semiconductor photoelectric detector has the advantages of direct forbidden band due to the energy band structure, high quantum efficiency and sharp cut-off wavelength, can adjust the response waveband by doping Al element during the material growth, can realize the response of only solar blind ultraviolet waveband when the Al component is more than 0.45, and is more and more valued by people in the field of ultraviolet detection. An AlGaN-based Avalanche Photodiodes (APD) is one of AlGaN-based semiconductor photodetectors, and compared with other types of detectors, the AlGaN-based Avalanche photodiode has the advantages of high response speed, internal gain and capability of being made into an area array device, so that the AlGaN-based Avalanche photodiode is very suitable for being applied to the field of weak ultraviolet detection and gradually becomes a research hotspot in the field of ultraviolet detectors in recent years.
However, the AlGaN-based avalanche photodiode has a problem of excessive avalanche excess noise, which makes it difficult to improve the signal-to-noise ratio of the device, and severely restricts the practical application of the device. According to the avalanche excess noise theory, the excess noise of the device is closely related to the collision ionization coefficient of carriers in the material, and the noise of the device is minimum only when carrier avalanches with high collision ionization coefficients dominate. Based on the thought, the patent designs a novel AlGaN-based avalanche photodiode with low noise.
The references referred to above are as follows:
[1]McClintock R,Yasan A,Minder K,et al.Avalanche multiplication inAlGaN based solar-blind photodetectors[J].Applied physics letters,2005,87(24):241123.
[2]Mcintyre R J.Multiplication noise in uniform avalanche diodes[J].IEEE Transactions of Electron Devices,1966,13(1):164-168.
[3]Enrico Bellotti,Francesco Bertazzi,Sara Shishehchi,MasahikoMatsubara,and Michele Goano,Theory of Carriers Transport in III-NitrideMaterials:State of the Art and Future Outlook[J].IEEE Transactions ofElectron Devices,2013,60(10):3204-3215.
disclosure of Invention
The invention aims to provide an AlGaN-based avalanche photodiode with low noise and a manufacturing method thereof.
The structure of an AlGaN-based avalanche photodiode with low noise is shown in FIG. 1, and is characterized in that the device structure comprises:
a sapphire substrate 1, the thickness of the substrate is between 0.3 mm and 0.6 mm;
a buffer layer 2 made of AlN material with a thickness of 500 nm;
an unintentionally doped Al0.45Ga0.55The thickness of the N layer 3 is about 1 mu m;
an n-type Al0.45Ga0.55N layer 4 with thickness of 0.6-1 μm and electron concentration of 5-8 × 1017cm-3；
An n-type ohmic contact electrode 5 formed on the n Al0.45Ga0.55On N, the metal film is Ti/Al/Au, and the thickness is 50nm/50nm/40 nm;
a multiplication region for unintentionally doping AlN layer 6, the material type is intrinsic, and the carrier concentration is less than 1 × 1016cm-3The thickness is 200-250 nm;
a p-type Al0.45Ga0.55N layer 7 with thickness of 100-120nm and hole concentration of 6-8 × 1017cm-3；
Weak p-type Al in absorption region0.45Ga0.55N layer 8 of weak p type with carrier concentration less than 5 × 1016cm-3The thickness is 200 nm;
an absorption region of p-type Al0.45Ga0.55 N layer 9 with thickness of 150-200nm and hole concentration of 2-5 × 1017cm-3；
A p-type GaN cap layer 10 with a thickness of 100nm, which is a heavily doped layer for making ohmic contact and has a hole concentration greater than 1 × 1018cm-3；
A passivation layer 11 made of SiO2Thickness of 250-300 nm;
a p-type ohmic contact electrode 12 formed on the p GaN cap layer, the metal film being Ni/Au and having a thickness of 30nm/30 nm;
the multiplication region unintentionally doped AlN layer 6 is an avalanche multiplication region which is a key region influencing the performance of the whole avalanche photodiode, and the AlN material quality is required to be higher;
8 and 9 form an absorption region of a low electric field region, light generates electron-hole pairs in the region, electrons drift to a lower avalanche region under the action of an electric field, and holes drift to a p electrode;
the p-type GaN cap layer 10 is heavily doped and is used as an ohmic contact layer to reduce the specific contact resistance of a p electrode; however, the region can respond to longer-wavelength ultraviolet rays and can reduce the ultraviolet suppression ratio of the avalanche photodiode, so that the p GaN layer exposed outside the p electrode needs to be etched away, and only 20-30nm is reserved;
wherein the passivation layer 11 is SiO2The anti-reflection coating is prepared by a magnetron sputtering method, the thickness is 300-400nm, and the anti-reflection coating is used as an anti-reflection layer.
The manufacturing process of the AlGaN-based avalanche photodiode with low noise comprises the following steps:
the method comprises the following steps: growing an AlGaN material epitaxial wafer by using an MOCVD method according to the structure of the figure 1;
step two: cleaning an epitaxial wafer;
step three: manufacturing a p-type ohmic contact electrode on the surface of the p-type GaN cap layer 10;
step four: etching the p GaN cap layer;
step five: etching the material to n-type Al in the second etching0.45Ga0.55An N layer 4;
step six: in n-type Al0.45Ga0.55Preparing an N-type ohmic contact electrode on the N layer 4;
step seven: growing a passivation layer SiO2And openings are formed at the p-electrode and the n-electrode.
The invention has the greatest advantage that a novel AlGaN avalanche photodiode structure is designed, so that photogenerated electron-hole pairs are generated in a low electric field region, then electrons drift into an AlN avalanche multiplication region under the action of an electric field to generate avalanche, and because the collision ionization coefficient of the electrons in an AlN material is far higher than that of the holes, the electrons are multiplied in the region, so that not only can enough avalanche gain be generated, but also the avalanche excess noise is reduced to the lowest.
Drawings
FIG. 1 is a schematic diagram of an AlGaN-based avalanche photodiode with low noise according to the present invention;
in the figure: 1. a sapphire substrate;
2. a buffer layer;
3. unintentionally doped with Al0.45Ga0.55N layers;
n type Al0.45Ga0.55N layers;
an n-type ohmic contact electrode;
6. the multiplication region is not intentionally doped with an AlN layer;
p type Al0.45Ga0.55N layers;
8. weak p-type Al in absorption region0.45Ga0.55N layers;
9. absorption region p-type Al0.45Ga0.55N layers;
a GaN cap layer;
11. a passivation layer;
a p-type ohmic contact electrode.
Detailed Description
Specific examples of such detectors are provided below and further illustrate the present invention.
1, preparing materials:
and sequentially epitaxially growing each layer of material in the structure shown in the figure 1 on a double-polished transparent sapphire substrate (0001).
2, material cleaning:
selecting an epitaxial growth AlGaN material, sequentially cleaning the AlGaN material by adopting trichloromethane, diethyl ether, acetone and alcohol to remove oil stains and impurities on the surface, then washing the AlGaN material clean by using deionized water, and then drying the AlGaN material by using high-purity nitrogen.
Preparing a 3 p-type ohmic contact electrode:
a p-type ohmic contact electrode 12 was prepared on the GaN cap layer 10, the metal film system was Ni/Au with a thickness of 30nm/30nm, and rapid annealing was performed at 550 ℃ in an air atmosphere for 3 minutes to form an ohmic contact.
4, etching:
the etching adopts ICP (inductively coupled plasma) etching, and is divided into two steps: etching the GaN cap layer outside the p electrode in the first step and only keeping 20 nm; second step, etching the material to n-type Al0.45Ga0.55And the N layer 4 is over-etched by 150nm to form a mesa structure in the figure 1.
Preparing a 5 n type ohmic contact electrode:
in n-type Al0.45Ga0.55Preparing an N-type ohmic contact electrode 5 on the N layer 4, wherein the contact electrode film is Ti/Al/Au, has a thickness of 50nm/50nm/40nm, and is coated on the N layer2Rapid thermal annealing at 750 deg.c for 30 seconds to form ohmic contacts.
6 growing a passivation layer 11, and growing SiO by adopting a magnetron sputtering method2And the thickness is 250nm, and openings are formed at the p electrode and the n electrode, so that the p ohmic contact electrode 12 and the n ohmic contact electrode 5 are exposed.
And 7, scribing and packaging the substrate to complete the preparation of the low-noise AlGaN-based avalanche photodiode device.
Claims (2)
1. An AlGaN-based avalanche photodiode with low noise includes a sapphire substrate (1), a buffer layer (2), and Al doped unintentionally0.45Ga0.55N layer (3), N-type Al0.45Ga0.55An N layer (4), an N-type ohmic contact electrode (5), a multiplication region unintentionally doped with AlN (6), p-type Al0.45Ga0.55N layer (7), absorption region weak p-type Al0.45Ga0.55N layer (8), absorption region p-type Al0.45Ga0.55N layer (9), p type GaN cap layer (10), passivation layer (11), p type ohmic contact electrode (12), its characterized in that:
said AlGaN-based avalancheThe photodiode is characterized in that light rays enter from the front side of the device and sequentially pass through the passivation layer (11), the p-type GaN cap layer (10) and the absorption region p-type Al from top to bottom0.45Ga0.55An N layer (9); weak p-type Al in absorption region0.45Ga0.55An N layer (8); p type Al0.45Ga0.55An N layer (7), a multiplication region unintentionally doped with AlN (6), N-type Al0.45Ga0.55N layer (4) unintentionally doped with Al0.45Ga0.55The buffer layer (2) is arranged on the N layer (3), and the sapphire substrate (1) is arranged on the buffer layer; the n-type ohmic contact electrode (5) is positioned on the n-type Al0.45Ga0.55On the N layer (4), a p-type ohmic contact electrode (12) is positioned on the p-type GaN cap layer (10), and a photocurrent is formed between the N-type ohmic contact electrode (5) and the p-type ohmic contact electrode (12);
the multiplication region (6) is an unintentionally doped AlN layer, the material type is an intrinsic type, and the carrier concentration is less than 1 × 1016cm-3The thickness is 200-220 nm;
the absorption region is weak p-type Al0.45Ga0.55N layer (8) with carrier concentration less than 5 × 1016cm-3The thickness is 200 nm;
the absorption region is p-type Al0.45Ga0.55N layer (9) with a thickness of 150-200nm and a hole concentration of 2-5 × 1017cm-3；
Wherein the absorption region is weak p-type Al0.45Ga0.55N layer (8) and absorption region p-type Al0.45Ga0.55The N layer (9) forms an absorption region of a low electric field region, light generates electron-hole pairs in the region, electrons drift to a lower avalanche region under the action of an electric field, and holes drift to a p electrode;
the p-type GaN cap layer (10) is 100nm thick, is a heavily doped layer for manufacturing ohmic contact, and has a hole concentration greater than 1 × 1018cm-3。
2. A method of manufacturing the AlGaN-based avalanche photodiode with low noise according to claim 1, comprising the steps of:
the method comprises the following steps: growing an AlGaN material epitaxial wafer by using an MOCVD method;
step two: cleaning an epitaxial wafer;
step three: manufacturing a p-type ohmic contact electrode on the surface of the p-type GaN cap layer (10);
step four: etching the p-type GaN cap layer (10), and etching the 100nm cap layer material to 80nm, and only remaining 20 nm;
step five: etching the material to n-type Al in the second etching0.45Ga0.55An N layer (4);
step six: in n-type Al0.45Ga0.55Preparing an N-type ohmic contact electrode on the N layer (4);
step seven: and growing a passivation layer (11) and opening holes at the p electrode and the n electrode.
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