CN114709279A - Ultraviolet detector chip with inverted structure - Google Patents
Ultraviolet detector chip with inverted structure Download PDFInfo
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- CN114709279A CN114709279A CN202210631756.0A CN202210631756A CN114709279A CN 114709279 A CN114709279 A CN 114709279A CN 202210631756 A CN202210631756 A CN 202210631756A CN 114709279 A CN114709279 A CN 114709279A
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- 239000004065 semiconductor Substances 0.000 claims description 65
- 239000000758 substrate Substances 0.000 claims description 24
- 230000005525 hole transport Effects 0.000 claims description 13
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 238000002955 isolation Methods 0.000 claims description 7
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
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- 239000001257 hydrogen Substances 0.000 description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to the technical field of ultraviolet detectors, in particular to an ultraviolet detector chip with an inverted structure. The ultraviolet detector chip provided by the invention comprises a support, an electrode and an inverted AlGaN-based epitaxial structure which are sequentially arranged from bottom to top; the electrodes comprise an N electrode and a P electrode; and antireflection films are arranged on the upper surface and four side surfaces of the ultraviolet detector chip. According to the invention, the antireflection film is arranged on the upper surface of the ultraviolet detector chip, so that the reflection of ultraviolet rays on an interface can be reduced, the probability of ultraviolet rays entering a material body is improved, the efficiency of the ultraviolet detector chip for absorbing the ultraviolet rays is improved, and the responsivity of the ultraviolet detector chip to the ultraviolet rays is improved; meanwhile, the four side walls of the ultraviolet detector chip can be irradiated by ultraviolet rays, and the side walls are provided with the antireflection film, so that the ultraviolet absorption efficiency of the ultraviolet detector chip can be improved, and the ultraviolet responsivity of the ultraviolet detector chip can be further improved.
Description
Technical Field
The invention relates to the technical field of ultraviolet detectors, in particular to an ultraviolet detector chip with an inverted structure.
Background
The ultraviolet detector is a sensor which converts one form of electromagnetic radiation signal into another form of signal which is easy to receive and process, and the photoelectric detector converts optical radiation into an electrical signal by utilizing the photoelectric effect. In the photoelectric effect, photons excite a photocathode to generate photoelectrons, which are then collected and amplified, and the obtained optical signals (current and the like) are the received radiation conversion values. Semiconductor detection devices are widely used in many fields due to their excellent characteristics, and particularly, ultraviolet semiconductor detectors are receiving attention in military and civil fields.
GaN PIN type photodiodes, metal-semiconductor-metal (MSM) photodiodes, PN junction type photodiodes, schottky type photodiodes, and these detector structures have been widely studied and applied in the field of ultraviolet detection. However, the quality of the material is not high enough, and the structural design is not good enough, so that the problems of large dark current, high spectral response noise, low spectral responsivity and the like of the detector are caused, and the application of the detector in many fields is limited.
The deep ultraviolet light emitting diode based on the aluminum gallium nitride (AlGaN) material has the advantages of firmness, energy conservation, long service life, no mercury, environmental protection and the like, and gradually permeates into the traditional disinfection and sterilization application field of mercury lamps. In order to detect the strength and ultraviolet signals of the AlGaN optical fiber, a corresponding AlGaN detector is also prepared. However, due to the problems of AlGaN materials and chip structure design, the responsivity of the AlGaN ultraviolet detector chip is not high, which limits the wide-range popularization and application of the AlGaN ultraviolet detector chip.
Disclosure of Invention
The invention aims to provide an ultraviolet detector chip with a flip structure, which has higher responsivity.
In order to achieve the above object, the present invention provides the following technical solutions:
the invention provides an ultraviolet detector chip with an inverted structure, which comprises a bracket, an electrode and an inverted AlGaN-based epitaxial structure, wherein the bracket, the electrode and the inverted AlGaN-based epitaxial structure are sequentially arranged from bottom to top;
the electrodes comprise an N electrode and a P electrode;
and antireflection films are arranged on the upper surface and four side surfaces of the ultraviolet detector chip.
Preferably, the refractive index of the antireflection film is between the refractive index of the upper surface of the ultraviolet detector chip and the refractive index of air.
Preferably, the antireflection film is made of SiO2Or SixN; the value range of x is 0-1.
Preferably, the thickness of the antireflection film is 20-200 nm.
Preferably, the N electrode and the P electrode are diagonally disposed on the surface of the AlGaN-based epitaxial structure, and the N electrode and the P electrode are not in contact with each other.
Preferably, the N electrode and the P electrode are isolated by an isolating material.
Preferably, the percentage of the area of the N electrode in the surface area of the AlGaN-based epitaxial structure is less than or equal to 10%.
Preferably, the material of the N electrode comprises one or more of Ti, Al, Ni, Au and Cr;
the material of the P electrode comprises one or more of ITO, Ni, Au and Al.
Preferably, the AlGaN-based epitaxial structure includes a substrate layer, a non-doped AlGaN semiconductor buffer layer, a non-doped AlGaN semiconductor material layer, an N-type AlGaN contact layer, a non-doped AlGaN semiconductor ultraviolet absorption layer, a P-type AlGaN hole transport layer, and a P-type semiconductor contact layer, which are sequentially stacked from bottom to top.
Preferably, the P electrode is in contact with the N-type AlGaN contact layer;
the N electrode is in contact with the P-type semiconductor contact layer.
The invention provides an ultraviolet detector chip with an inverted structure, which comprises a bracket, an electrode and an inverted AlGaN-based epitaxial structure, wherein the bracket, the electrode and the inverted AlGaN-based epitaxial structure are sequentially arranged from bottom to top; the electrodes comprise an N electrode and a P electrode; and antireflection films are arranged on the upper surface and four side surfaces of the ultraviolet detector chip. According to the invention, the antireflection film is arranged on the upper surface of the ultraviolet detector chip, so that the reflection of ultraviolet rays on an interface can be reduced, the probability of ultraviolet rays entering a material body is improved, the efficiency of the ultraviolet detector chip for absorbing the ultraviolet rays is improved, and the responsivity of the ultraviolet detector chip to the ultraviolet rays is improved; meanwhile, the four side walls of the ultraviolet detector chip can be irradiated by ultraviolet rays, and the side walls are provided with the antireflection film, so that the ultraviolet absorption efficiency of the ultraviolet detector chip can be improved, and the ultraviolet responsivity of the ultraviolet detector chip can be further improved.
Drawings
FIG. 1 is a schematic structural view of an AlGaN-based epitaxial structure according to the present invention; the semiconductor device comprises a substrate layer 101, a substrate layer 102, an undoped AlGaN semiconductor buffer layer 103, an undoped AlGaN semiconductor material layer 104, an N-type AlGaN contact layer 105, an undoped AlGaN semiconductor ultraviolet absorption layer 106, a P-type AlGaN hole transmission layer 107 and a P-type semiconductor contact layer;
FIG. 2 is a schematic structural diagram of an ultraviolet detector chip of a flip-chip structure without an antireflection film, wherein 201-a support, 202-an electrode bonding material, 203-an electrode pad, 204-a electrode bonding material, 205-a electrode, 206-an isolation material, 207-an electrode, and 208-a P-type semiconductor contact layer; the solar cell comprises a 209-P type AlGaN hole transport layer, a 210-undoped AlGaN semiconductor ultraviolet absorption layer, a 211-N type AlGaN contact layer, a 212-undoped AlGaN semiconductor material layer, a 213-undoped AlGaN semiconductor buffer layer and a 214-substrate layer;
fig. 3 is a schematic structural diagram of an ultraviolet detector chip with a flip-chip structure according to the present invention, wherein 301-a support, 302-an electrode welding material, 303-an electrode pad, 304-a electrode welding material, 305-a P electrode, 306-an isolation material, 307-an electrode, 308-a P-type semiconductor contact layer, 309-a P-type AlGaN hole transport layer, 310-an undoped AlGaN semiconductor ultraviolet absorption layer, 311-an N-type AlGaN contact layer, 312-an undoped AlGaN semiconductor material layer, 313-an undoped AlGaN semiconductor buffer layer, 314-a substrate layer, 315-an antireflection film on a side surface of the ultraviolet detector chip, and 316-an antireflection film on an upper surface of the ultraviolet detector chip;
fig. 4 is a schematic diagram of the position relationship between the N electrode and the P electrode in the ultraviolet detector chip with the flip-chip structure, wherein the electrode is 401-N electrode, and the electrode is 402-P electrode.
Detailed Description
As shown in fig. 3, the invention provides an ultraviolet detector chip with a flip structure, which comprises a support, an electrode and a flip AlGaN-based epitaxial structure, wherein the support, the electrode and the flip AlGaN-based epitaxial structure are sequentially arranged from bottom to top;
the electrodes comprise an N electrode and a P electrode;
and antireflection films are arranged on the upper surface and four side surfaces of the ultraviolet detector chip.
The support is not limited in any way, and the support for preparing the ultraviolet detector chip is well known to those skilled in the art.
The specific structure of the AlGaN-based epitaxial structure is not limited in any way, and any epitaxial structure known to those skilled in the art can be used. In a specific embodiment of the present invention, the AlGaN-based epitaxial structure includes, sequentially stacked from bottom to top, a substrate layer, a non-doped AlGaN semiconductor buffer layer, a non-doped AlGaN semiconductor material layer, an N-type AlGaN contact layer, a non-doped AlGaN semiconductor ultraviolet absorption layer, a P-type AlGaN hole transport layer, and a P-type semiconductor contact layer (as shown in fig. 1).
In the invention, the ultraviolet transmittance of the substrate is preferably 60% to 100%. The material of the substrate is preferably sapphire, AlN or Ga2O3. In a specific embodiment of the present invention, the substrate is preferably a sapphire substrate.
The thickness of the undoped AlGaN semiconductor buffer layer, the undoped AlGaN semiconductor material layer, the N-type AlGaN contact layer, the undoped AlGaN semiconductor ultraviolet absorption layer and the P-type AlGaN hole transmission layer and the atomic proportion relation of AlGaN are not limited by any special limit, and the thickness and atomic proportion relation known by the technicians in the field can be adopted. The N-type doping concentration in the N-type AlGaN contact layer is not limited in any way, and may be a doping concentration known to those skilled in the art. The P-type doping concentration in the P-type AlGaN hole transport layer is not limited in any way, and the doping concentration known to those skilled in the art can be adopted.
In the present invention, the material of the P-type semiconductor contact layer is preferably a P-type AlGaN material or a P-type GaN material. The thickness of the P-type semiconductor contact layer is not limited in any way, and the atomic ratio relationship in the P-type AlGaN material or the P-type GaN material is not limited in any way, so that the thickness and the atomic ratio relationship which are well known to those skilled in the art can be adopted.
In a specific embodiment of the present invention, the undoped AlGaN semiconductor buffer layer is specifically an AlN semiconductor buffer layer having a thickness of 20 nm; the non-doped AlGaN semiconductor material layer is specifically A with the thickness of 3 mu mAn lN semiconductor material layer; the N-type AlGaN contact layer is 1 mu m thick and 1 multiplied by 10N-type doping concentration18cm-3Al of (2)0.6Ga0.4An N contact layer with a thickness of 1 μm and an N-type doping concentration of 5 × 1018cm-3Al of (2)0.5Ga0.5An N contact layer; the non-doped AlGaN semiconductor ultraviolet absorption layer is specifically Al with the thickness of 200nm0.6Ga0.4N absorption layer of 200nm thick Al0.25Ga0.75The N absorption layer is a GaN absorption layer with the thickness of 200 nm; the P-type AlGaN hole transport layer is specifically 50nm thick and 1 x 10 of P-type doping concentration19cm-3P type Al of (1)0.4Ga0.6An N hole transport layer with a thickness of 50nm and a P-type doping concentration of 2 × 1019cm-3P type Al of (1)0.2Ga0.8N hole transport layer with thickness of 50nm and P-type doping concentration of 3 × 1019cm-3P-type GaN hole transport layer of (1); the P-type semiconductor contact layer has a thickness of 20nm and a P-type doping concentration of 5 × 1019cm-3The P-type GaN semiconductor contact layer has a thickness of 20nm and a P-type doping concentration of 5 × 1019cm-3The P-type GaN semiconductor contact layer has a thickness of 20nm and a P-type doping concentration of 5 × 1019cm-3P-type GaN semiconductor contact layer of (1).
In the present invention, the N electrode is in contact with the N-type AlGaN contact layer (as shown in fig. 3); the P electrode is in contact with the P-type semiconductor contact layer.
In the present invention, the N electrode and the P electrode are preferably disposed diagonally on the surface of the AlGaN-based epitaxial structure, and the N electrode and the P electrode are not in contact (as shown in fig. 4). In the present invention, the N electrode and the P electrode are preferably isolated from each other by a separator (as shown in fig. 3). In the present invention, the percentage of the area of the N electrode to the surface area of the AlGaN-based epitaxial structure is preferably 10% or less, more preferably 8% or less, and most preferably 5% or less.
In the present invention, the area of the N electrode is controlled within the above range, so that the area of the light absorbing layer can be increased, and the ultraviolet rays irradiated onto the substrate surface can be absorbed more easily.
In the invention, the material of the N electrode preferably comprises one or more of Ti, Al, Ni, Au and Cr, and when the material of the N electrode is one or more of Ti, Al, Ni, Au and Cr, the material of the N electrode is an alloy consisting of the above metal elements. In the invention, the material of the P electrode preferably comprises one or more of ITO, Ni, Au and Al, and when the material of the P electrode is one or more of ITO, Ni, Au and Al, the material of the P electrode is an alloy consisting of the metal elements. In a specific embodiment of the present invention, the material of the P electrode is specifically ITO or Ni; the N electrode is made of Ti/Al/Ti/Au, and the Ti/Al/Ti/Au is a Ti layer, an Al layer, a Ti layer and an Au layer which are arranged in a layered mode.
In the invention, the surface of the N electrode is preferably provided with an N electrode pad, and the N electrode pad is preferably welded with the bracket through an N electrode welding material; the P-electrode is preferably welded to the support by a P-electrode welding material. In the present invention, the N-electrode bonding material and the P-electrode bonding material are independently preferably Au and/or Sn, and when the N-electrode bonding material or the P-electrode bonding material is Au and Sn, an alloy of Au and Sn is understood.
In the invention, the thickness of the antireflection film is preferably 20-200 nm, and more preferably 30-50 nm.
In a specific embodiment of the invention, the thickness of the antireflection film on the upper surface of the ultraviolet detector chip is specifically 50 nm; the thicknesses of the antireflection films on the four side surfaces of the ultraviolet detector chip are 30nm or 50nm.
In the present invention, the refractive index of the antireflection film is preferably between the refractive index of the upper surface of the ultraviolet detector chip and the refractive index of air. In the invention, the refractive index of the antireflection film is preferably 1.2-2, and more preferably 1.5. In the invention, the antireflection film is made of SiO2Or SixN; the value range of x is 0-1.
In the invention, because the refractive index of air is 1, the refractive index of the substrate in the AlGaN-based epitaxial structure is 1.7-2.0, and the higher refractive index of the substrate can cause the angle of ultraviolet rays incident to enter the absorption layer to be lower, so that most of ultraviolet rays do not enter the material absorption layer and are wasted, the angle of ultraviolet rays incident to enter the absorption layer can be effectively improved by the arrangement of the antireflection film and the arrangement of the refractive index of the antireflection film, the ultraviolet absorption efficiency is improved, and the ultraviolet responsivity level is further improved.
In the present invention, the process for preparing the ultraviolet detector chip with the flip-chip structure preferably includes:
firstly cleaning the surface of a substrate, and then sequentially growing a non-doped AlGaN semiconductor buffer layer, a non-doped AlGaN semiconductor material layer, an N-type AlGaN contact layer, a non-doped AlGaN semiconductor ultraviolet absorption layer, a P-type AlGaN hole transmission layer and a P-type semiconductor contact layer on the surface of the substrate to obtain an epitaxial structure;
determining the position of an N electrode area, etching the epitaxial structure to the middle position of an N-type AlGaN contact layer by adopting a dry etching mode, evaporating an N electrode on the surface of the N-type AlGaN contact layer, evaporating a P electrode on the surface of a P-type semiconductor contact layer, separating the N electrode from the P electrode by adopting an isolation material, arranging the N electrode and the P electrode diagonally, evaporating an N electrode bonding pad on the surface of the N electrode, and respectively welding the N electrode bonding pad and the P electrode bonding pad to the bracket through an N electrode welding material and a P electrode welding material to obtain an ultraviolet detector chip (shown in figure 2) with an inverted structure and without an antireflection film;
and evaporating antireflection films on the upper surface and four side surfaces of the ultraviolet detector chip without the antireflection film and in the flip structure to obtain the ultraviolet detector chip in the flip structure.
In the invention, the cleaning is preferably carried out by putting the substrate into a high-temperature MOCVD device, introducing hydrogen, baking at 1100 ℃, and cleaning the oxide and the impurity on the surface of the substrate.
The invention has no special limitation on the mode of growing the undoped AlGaN semiconductor buffer layer, the undoped AlGaN semiconductor material layer, the N-type AlGaN contact layer, the undoped AlGaN semiconductor ultraviolet absorption layer, the P-type AlGaN hole transmission layer and the P-type semiconductor contact layer, and can adopt the mode which is well known by the technicians in the field.
The flip-chip ultraviolet detector chip provided by the present invention is described in detail with reference to the following examples, but they should not be construed as limiting the scope of the present invention.
Example 1
Placing the sapphire patterned substrate into a high-temperature MOCVD device, introducing hydrogen, baking at 1100 ℃, cleaning oxides and impurities on the surface of the substrate, sequentially growing an AlN semiconductor buffer layer with the thickness of 20nm, an AlN semiconductor material layer with the thickness of 3 mu m and an N-type doping concentration of 1 multiplied by 10 with the thickness of 1 mu m18cm-3Al of (2)0.6Ga0.4N contact layer of 200nm thick Al0.6Ga0.4An N absorption layer with a thickness of 50nm and a P-type doping concentration of 1 × 1019cm-3P type Al of (1)0.4Ga0.6N hole transport layer with thickness of 20nm and P-type doping concentration of 5 × 1019cm-3Obtaining an epitaxial structure by the P-type GaN semiconductor contact layer;
preparing an ultraviolet detection chip of a flip structure according to the sizes of 0.5mm and 0.5mm respectively:
determining the position of the N electrode region, and etching the epitaxial structure to Al by adopting a dry etching mode0.6Ga0.4After the intermediate position of the N contact layer, in the Al0.6Ga0.4Evaporating an N electrode (the length and the width of the N electrode are 0.1mm and 0.1mm respectively, the material of the N electrode is Ti/Al/Ti/Au), evaporating a P electrode (the material of the P electrode is ITO) on the surface of the P type semiconductor contact layer, separating the N electrode from the P electrode by adopting an isolation material, arranging the N electrode and the P electrode diagonally, evaporating an N electrode pad on the surface of the N electrode, and welding the N electrode pad and the P electrode pad to the bracket through an N electrode welding material and a P electrode welding material respectively to obtain an anti-reflection film-free ultraviolet detector chip (the wavelength response range is 220-280 nm) with a flip structure;
evaporating antireflection films on the upper surface and four side surfaces of the ultraviolet detector chip with the inverted structure without the antireflection film (the antireflection film is made of SiO2The thickness of the antireflection film on the upper surface of the ultraviolet detector chip is 50 nm; the thicknesses of the antireflection films on the four side surfaces of the ultraviolet detector chip are 30 nm),and obtaining the ultraviolet detector chip with the flip structure (the wavelength response range is 220-280 nm). The spectral responsivity was 0.2A/W.
Example 2
Placing the sapphire patterned substrate into a high-temperature MOCVD device, introducing hydrogen, baking at 1100 ℃, cleaning oxides and impurities on the surface of the substrate, sequentially growing an AlN semiconductor buffer layer with the thickness of 20nm and an AlN semiconductor material layer with the thickness of 3 mu m, wherein the doping concentration of 1 mu m and N type is 1 multiplied by 1018Al of (2)0.5Ga0.5N contact layer of 200nm thick Al0.25Ga0.75N absorption layer with thickness of 50nm and P-type doping concentration of 5 × 1018P type Al of (1)0.2Ga0.8N hole transport layer with thickness of 20nm and P-type doping concentration of 5 × 1019Obtaining an epitaxial structure on the P-type GaN semiconductor contact layer;
preparing an ultraviolet detection chip of a flip structure according to the sizes of 0.5mm and 0.5mm respectively:
determining the position of the N electrode region, and etching the epitaxial structure to Al by adopting a dry etching mode0.5Ga0.5After the intermediate position of the N contact layer, in the Al0.5Ga0.5Evaporating an N electrode (the length and the width of the N electrode are 0.1mm and 0.1mm respectively, the material of the N electrode is Ti/Al/Ti/Au), evaporating a P electrode (the material of the P electrode is Ni) on the surface of the P type semiconductor contact layer, separating the N electrode from the P electrode by adopting an isolation material, arranging the N electrode and the P electrode diagonally, evaporating an N electrode pad on the surface of the N electrode, and welding the N electrode pad and the P electrode pad to the bracket through an N electrode welding material and a P electrode welding material respectively to obtain an anti-reflection film-free ultraviolet detector chip with a flip structure (the wavelength response spectrum is 220-320 nm);
evaporating antireflection films on the upper surface and four side surfaces of the ultraviolet detector chip with the inverted structure without the antireflection film (the antireflection film is made of SiO2The thickness of the anti-reflection film on the upper surface of the ultraviolet detector chip is 50 nm; the thicknesses of the antireflection films on the four side surfaces of the ultraviolet detector chip are 50 nm), and the ultraviolet detector chip with the flip-chip structure is obtained (wavelength response)The spectrum is 220-320 nm), and the spectral responsivity is 0.3A/W.
Example 3
Placing the sapphire patterned substrate into a high-temperature MOCVD device, introducing hydrogen, baking at 1100 ℃, cleaning oxides and impurities on the surface of the substrate, sequentially growing an AlN semiconductor buffer layer with the thickness of 20nm and an AlN semiconductor material layer with the thickness of 3 mu m, wherein the doping concentration of 1 mu m and N type is 1 multiplied by 1018Al of (2)0.5Ga0.5N contact layer, GaN absorption layer with thickness of 200nm, thickness of 50nm, and P-type doping concentration of 2 × 1019The P-type GaN hole transport layer has a thickness of 20nm and a P-type doping concentration of 5 × 1019Obtaining an epitaxial structure by the P-type GaN semiconductor contact layer;
preparing an ultraviolet detection chip of a flip structure according to the sizes of 0.5mm and 0.5mm respectively:
determining the position of the N electrode region, and etching the epitaxial structure to Al by adopting a dry etching mode0.5Ga0.5After the intermediate position of the N contact layer, in the Al0.5Ga0.5Evaporating an N electrode (the length and the width of the N electrode are 0.1mm and 0.1mm respectively, the material of the N electrode is Ti/Al/Ti/Au), evaporating a P electrode (the material of the P electrode is Ni) on the surface of the P type semiconductor contact layer, separating the N electrode from the P electrode by adopting an isolation material, arranging the N electrode and the P electrode diagonally, evaporating an N electrode pad on the surface of the N electrode, and welding the N electrode pad and the P electrode pad to the bracket through an N electrode welding material and a P electrode welding material respectively to obtain an anti-reflection film-free ultraviolet detector chip with a flip structure (the wavelength response spectrum is 220-370 nm);
evaporating antireflection films on the upper surface and four side surfaces of the ultraviolet detector chip with the inverted structure without the antireflection film (the antireflection film is made of SiO2The thickness of the antireflection film on the upper surface of the ultraviolet detector chip is 50 nm; and the thicknesses of the antireflection films on the four side surfaces of the ultraviolet detector chip are 50 nm), so that the ultraviolet detector chip with the flip structure (the wavelength response spectrum is 220-370 nm) is obtained, and the spectral responsivity is 0.4A/W.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. An ultraviolet detector chip with an inverted structure is characterized by comprising a support, electrodes and an inverted AlGaN-based epitaxial structure which are sequentially arranged from bottom to top;
the electrodes comprise an N electrode and a P electrode;
and antireflection films are arranged on the upper surface and four side surfaces of the ultraviolet detector chip.
2. The flip-chip ultraviolet detector chip of claim 1, wherein the antireflection film has a refractive index between a refractive index of an upper surface of the ultraviolet detector chip and a refractive index of air.
3. The ultraviolet detector chip with the flip-chip structure as claimed in claim 2, wherein the material of the antireflection film is SiO2Or SixN; the value range of x is 0-1.
4. The ultraviolet detector chip with the flip-chip structure as claimed in any one of claims 1 to 3, wherein the thickness of the antireflection film is 20 to 200 nm.
5. The ultraviolet detector chip with the flip-chip structure as claimed in claim 1, wherein the N electrode and the P electrode are diagonally disposed on the surface of the AlGaN-based epitaxial structure, and the N electrode and the P electrode are not in contact with each other.
6. The ultraviolet detector chip with the flip-chip structure as claimed in claim 5, wherein the N electrode and the P electrode are isolated from each other by an isolation material.
7. The ultraviolet detector chip with the flip-chip structure as claimed in claim 6, wherein the percentage of the area of the N electrode to the surface area of the AlGaN-based epitaxial structure is 10% or less.
8. The ultraviolet detector chip with the flip structure as claimed in claim 7, wherein the material of the N electrode comprises one or more of Ti, Al, Ni, Au and Cr;
the material of the P electrode comprises one or more of ITO, Ni, Au and Al.
9. The ultraviolet detector chip with the flip structure according to claim 1, wherein the AlGaN-based epitaxial structure comprises a substrate layer, a non-doped AlGaN semiconductor buffer layer, a non-doped AlGaN semiconductor material layer, an N-type AlGaN contact layer, a non-doped AlGaN semiconductor ultraviolet absorption layer, a P-type AlGaN hole transport layer and a P-type semiconductor contact layer which are sequentially stacked from bottom to top.
10. The ultraviolet detector chip in a flip-chip configuration according to claim 9, wherein the P electrode is in contact with the N-type AlGaN contact layer;
the N electrode is in contact with the P-type semiconductor contact layer.
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| CN115084116A (en) * | 2022-08-22 | 2022-09-20 | 至善时代智能科技(北京)有限公司 | AlInGaN luminescence and detection integrated chip |
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