CN202134542U - AlGaN ultraviolet detector with secondary table top wrapped electrode - Google Patents
AlGaN ultraviolet detector with secondary table top wrapped electrode Download PDFInfo
- Publication number
- CN202134542U CN202134542U CN201120142481U CN201120142481U CN202134542U CN 202134542 U CN202134542 U CN 202134542U CN 201120142481 U CN201120142481 U CN 201120142481U CN 201120142481 U CN201120142481 U CN 201120142481U CN 202134542 U CN202134542 U CN 202134542U
- Authority
- CN
- China
- Prior art keywords
- type
- table top
- thin layer
- algan
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Landscapes
- Light Receiving Elements (AREA)
Abstract
The utility model discloses an AlGaN ultraviolet detector device with a secondary table top wrapped electrode. A structure of the AlGaN ultraviolet detector device is characterized in that: a buffer layer, an n-type thin layer, an intrinsic thin layer, a p-type thin layer and a p-type cap layer are grown on a substrate in order, the p-type cap layer and part of the p-type thin layer are etched to form a p-type micro table top, the p-type micro table top is square shaped or circular shaped; a p-wrapped-type Ohmic electrode is deposited, the p-wrapped-type Ohmic electrode is square shaped or circular shaped, the p-type micro table top is wrapped by the p-wrapped-type Ohmic electrode, an edge is located at a surface of the p-type thin layer under the p-type micro table top; the p-type thin layer and the intrinsic thin layer are etched to form a device table top, the device table top is square shaped or circular shaped, the side length or the radius of the device table top is 20-100 [mu]m greater than the side length or the radius of the p-type micro table top; and an annular-shaped or a long-strip-shaped n-type Ohmic electrode is deposited. The structure of the AlGaN ultraviolet detector device of the utility model is beneficial to raise external quantum efficiency, response inhibition ratio and sensitivity of the device, and to further reduce dark current of the device.
Description
Technical field
The utility model relates to the AlGaN ultraviolet detector, specifically refers to a kind of AlGaN ultraviolet detector with secondary table top parcel electrode.
Background technology
At present, the AlGaN material becomes the leader of uv materials with physics, chemistry, the electrology characteristic of uniqueness.The AlGaN material has covered the 200-365nm wave band, and its device quantum efficiency is high, highly sensitive, the UV, visible light rejection ratio is big, can work in the non-solar-blind band (240-280nm) of low background fully.The AlGaN ultraviolet detector can be applicable to fields such as biochemical sensor, flame detecting (fire alarm system and Plane Tail Fire Based are surveyed), ultraviolet communication, ultraviolet imagery; Can carry out real-time detection or effectively tracking to the airbound target that discharges a large amount of ultra-violet radiations in wake flame or the plumage cigarette, under faint background, detect target.
Along with the ultraviolet device develops to the shortwave direction, the promotion that particularly low background non-solar-blind band is used, the component of AlGaN device intrinsic constantly increases, and the research of high aluminium component AlGaN device receives extensive concern.But along with the increase of Al component in the AlGaN material, the resistivity of material index increases, and the activation energy index of impurity increases, and carrier mobility reduces.The high aluminium component properties of materials has caused the difficulty of carrier transport and ohmic contact preparation, and this is the principal element that influences the AlGaN device performance at present.
In recent years, for oxidation that prevents high aluminium component AlGaN material and the resistivity that reduces the p type material, deposition one deck p-GaN film is as ohmic contact layer on the p-AlGaN thin layer of being everlasting on the technology.The preparation difficulty that the existing in of P type GaN cap layer reduced p type material ohmic contact to a certain extent; But the heterojunction between p-GaN and p-AlGaN film has produced certain influence to device performance; Near the 360nm wavelength, add a visible blind wave band response, reduced the sensitivity and the rejection ratio of device.
Summary of the invention
The purpose of the utility model is to overcome p type high aluminium component AlGaN film ohmic contact preparation difficulty; A kind of AlGaN ultraviolet detector with secondary table top parcel electrode type is proposed; Two-dimensional hole gas transmission charge carrier between this devices use p type GaN cap layer and p-AlGaN film in the heterojunction; Improved the sensitivity and the rejection ratio of device, the secondary table top can reduce the dark current of device, the follow-up passivation that helps device be connected.
The utility model is a kind of to have an AlGaN ultraviolet detector of secondary table top parcel electrode, and its structure is grown buffer layer 2, n type thin layer 3, thin intrinsic rete 4, p type thin layer 5 and a p type cap layer 6 successively on substrate 1, wherein:
Described substrate 1 adopts sapphire, silicon, carborundum or gallium nitride material;
Described resilient coating 2 is not less than AlN or the GaN film of 10nm for thickness;
Described n type thin layer 3 is that electron concentration is greater than 1 * 10
18Cm
-3The AlGaN film;
Described thin intrinsic rete 4 is the AlGaN film of thickness 100nm-300nm, and wherein the Al component is not more than the Al component in the n type thin layer 3, and free carrier concentration is less than 5 * 10
16Cm
-3
Described p type thin layer 5 is the AlGaN film of 100-200nm for thickness, and wherein the Al component is not less than the Al component in the thin intrinsic rete 4, and hole concentration is greater than 1 * 10
17Cm
-3
Described p type cap layer 6 is InGaAs, InGaN or the AlGaN film of 10-100nm for thickness, and hole concentration is greater than 1 * 10
17Cm
-3
Described AlGaN ultraviolet detector is square or circular configuration; The p type thin layer 5 of p type cap layer 6 and following 10-40nm is made into and the corresponding square or circular micro-mesa of device architecture; Its length of side or radius are 10-200 μ m; P coated Ohmic electrode 8 is wrapped in the centre of electrode with whole little table top, and thin intrinsic rete 4 constitutes part tables with p type thin layer 5, and its shape is made into device architecture corresponding square or circular; The big 20-100 μ of the length of side of its length of side or the little table top of radius ratio or radius m, preparation has that n type Ohmic electrode 7 its shapes are corresponding with square or circular device to be strip and loop configuration on n type thin layer 3.
Device is the preparation method comprise the steps:
Step 1: grown buffer layer, n type thin layer, thin intrinsic rete, p type thin layer and p type cap layer successively on substrate;
Step 2: p type cap layer and part p type thin layer are carried out etching, form the little table top of p type;
Step 3: preparation p coated Ohmic electrode on the little table top of p type;
Step 4: p type thin layer and thin intrinsic rete are carried out etching, form part table;
Step 5: preparation n type Ohmic electrode on n type thin layer;
Step 6: device is carried out passivation, scribing, welding and encapsulation, accomplish the device preparation.
The utility model provides a kind of AlGaN ultraviolet detector with secondary table top parcel electrode, and its characteristics are: be micro-mesa after the p type thin layer etching, for p coated Ohmic electrode provides the contact table top; Device p type Ohmic electrode is a coated, and the little table top of p type is wrapped up, and the edge falls within on the p type thin layer; Device p coated Ohmic electrode utilizes the conduction of the two-dimensional hole gas in the heterojunction between p type cap layer and p type AlGaN thin layer; Avoided the obstruction of surface potential barrier to charge carrier; Improved the external quantum efficiency of device; Wrap up the additional response shielding of electrode simultaneously, the response rejection ratio and the sensitivity that have improved device with p type cap layer; P type cap layer is that the follow-up passivation of device provides secondary to contact table top with little table top between the p type AlGaN thin layer, has improved passivation layer contacts side surfaces effect, can further reduce the device dark electric current.
Description of drawings
Fig. 1 is the structural representation of the AlGaN ultraviolet detector device with secondary table top parcel electrode of the utility model;
Wherein: 1---substrate;
2---resilient coating;
3---n type thin layer;
4---the thin intrinsic rete;
5---p type thin layer;
6---p type cap layer;
7---n type Ohmic electrode;
8---p coated Ohmic electrode.
Embodiment
See also accompanying drawing 1, the secondary table top that has of the utility model wraps up electrode type AlGaN ultraviolet detector device, and its device architecture comprises:
One substrate 1, this substrate 1 is sapphire, silicon, carborundum or gallium nitride material;
One resilient coating 2, this resilient coating 2 is grown on the substrate 1, is not less than AlN or the GaN film of 10nm for thickness;
One n type thin layer 3, this n type thin layer 3 is grown on the resilient coating 2, for electron concentration greater than 1 * 10
18Cm
-3The AlGaN film;
One thin intrinsic rete 4, this thin intrinsic rete 4 are grown on the n type thin layer 3, for thickness greater than the AlGaN film of 100nm less than 300nm, the Al component is not more than the Al component of n type thin layer 3, free carrier concentration is less than 5 * 10
16Cm
-3
One p type thin layer 5, this p type thin layer 5 is grown on the thin intrinsic rete 4, and for the Al component is not less than the AlGaN film of thin intrinsic rete, thickness is 100-200nm, and hole concentration is greater than 1 * 10
17Cm
-3
One p type cap layer 6, this p type cap layer 6 is grown on the p type thin layer 5, and for thickness is the semiconducting compound InGaAs of III-V family, InGaN or the AlGaN film of 10-100nm, hole concentration is greater than 1 * 10
17Cm
-3
One n type Ohmic electrode 7, this n type Ohmic electrode 7 is prepared on the n type thin layer 3, is annular or strip structure;
One p coated Ohmic electrode 8, this p coated Ohmic electrode 8 is prepared on the p type cap layer 6, and electrode shape is square or circular, and area is greater than the little footprint of p type, and the edge falls within p type thin layer 5 surfaces, and p type cap layer 6 and p type thin layer 5 tops are wrapped up.
Please consult accompanying drawing 1 again, the secondary table top that has of the utility model wraps up electrode type AlGaN ultraviolet detector device, and its device preparation process comprises:
Step 1: grown buffer layer 2, n type thin layer 3, thin intrinsic rete 4, p type thin layer 5 and p type cap layer 6 successively on substrate 1, this substrate 1 is for being sapphire, silicon, carborundum or gallium nitride material;
Step 2: p type cap layer 5 and part p type thin layer 5 are carried out etching, form the little table top of p type, the little table top degree of depth of this p type is p type cap layer 6 following 10-40nm, is shaped as squarely or circular, and the length of side or radius are 10-200 μ m;
Step 3: preparation p coated Ohmic electrode 8 on the little table top of p type, this p coated Ohmic electrode 8 is square or circular, and the little table top of p type is wrapped up, the edge falls within p type thin layer 5 surfaces under little table top;
Step 4: p type thin layer 5 and thin intrinsic rete 4 are carried out etching, form part table, mesa is square or circular, and the length of side or radius are greater than the little table top length of side of p type or radius 20-100 μ m;
Step 5: preparation n type Ohmic electrode 7 on n type thin layer 3, this n type thin layer 3 is that electron concentration is greater than 1 * 10
18Cm
-3The AlGaN film, these n type Ohmic electrode 7 shapes are corresponding with square or circular device to be strip and loop configuration;
Step 6: device is carried out passivation, scribing, welding and encapsulation, accomplish the device preparation.
For further specifying the structure that the secondary table top wraps up the AlGaN ultraviolet detector of electrode that has of the utility model proposition; We are example with the blind detector of back illumination AlGaN day that response wave band is positioned at 240nm-280nm; The structure and the preparation process of this device are described, specific as follows: with the sapphire is substrate 1, use MOCVD equipment successively deposit thickness as the AlN low temperature buffer layer 2 of 600nm, (the Al component is 0.65 to highly doped n type AlGaN thin layer 3; Thickness is 600nm, and electron concentration is 1 * 10
18Cm
-3), (the Al component is 0.45 to non-doping intrinsic AlGaN film 4, and thickness is 150nm, and concentration of background carriers is 5 * 10
15Cm
-3) and p type AlGaN thin layer 5 (the Al component is 0.45, and thickness is 100nm, and hole concentration is 1 * 10
17Cm
-3), the hole concentration that the last layer thickness of on p type AlGaN thin layer 5, growing is 10nm is 1 * 10
17Cm
-3The GaN film as p type cap layer 6.Utilize photoetching, etching to prepare the little table top of p type; Thermal evaporation low temperature depositing p coated Ohmic electrode 8 (Ni/Au/Ni/Au multilayers subsequently; Thickness is 20nm/20nm/20nm/20nm); Utilize technologies such as photoetching, burn into remove photoresist to confirm p coated Ohmic electrode 8 figures, and then utilize photoetching, etching to prepare the response device table top, and utilize photoetching, thermal evaporation techniques to prepare n type Ohmic electrode 7 (Ti/Al/Ti/Au multi-layered electrode; Thickness is 50nm/50nm/30nm/30nm)), accomplish preparation with secondary table top parcel electrode type AlGaN ultraviolet detector.
The secondary table top that has that the utility model proposes wraps up electrode type AlGaN ultraviolet detector device; This device architecture is different with traditional mesa devices structure; It has response device table top and two table tops of the little table top of p type, and p type AlGaN thin layer is micro-mesa behind etching technics, and p coated electrode utilizes the heterojunction between p type cap layer and p type AlGaN thin layer to carry out hole conduction; A contact difficult problem of having avoided p type material high work function to bring has improved the sensitivity and the responsiveness of device; The use of parcel electrode has shielded the additional response that p type cap layer brings, and has effectively improved the response rejection ratio of device, has improved the response characteristic of device; The preparation that is used for thickness passivation layer film of secondary table top provides good technology basis, can effectively improve the passivation effect of passivation layer, reduces the device dark electric current.
Claims (1)
1. AlGaN ultraviolet detector with secondary table top parcel electrode, its structure is: grown buffer layer (2), n type thin layer (3), thin intrinsic rete (4), p type thin layer (5) and p type cap layer (6) successively on substrate (1) is characterized in that:
Described substrate (1) adopts sapphire, silicon, carborundum or gallium nitride material;
Described resilient coating (2) is not less than AlN or the GaN film of 10nm for thickness;
Described n type thin layer (3) is that electron concentration is greater than 1 * 10
18Cm
-3The AlGaN film;
Described thin intrinsic rete (4) is the AlGaN film of thickness 100nm-300nm, and wherein free carrier concentration is less than 5 * 10
16Cm
-3
Described p type thin layer (5) is the AlGaN film of 100-200nm for thickness, and wherein hole concentration is greater than 1 * 10
17Cm
-3
Described p type cap layer (6) is InGaAs, InGaN or the AlGaN film of 10-100nm for thickness, and hole concentration is greater than 1 * 10
17Cm
-3
Described AlGaN ultraviolet detector is square or circular configuration; The p type thin layer (5) of p type cap layer (6) and following 10-40nm is made into and the corresponding square or circular micro-mesa of device architecture; Its length of side or radius are 10-200 μ m; P coated Ohmic electrode (8) is wrapped in whole little table top the centre of electrode; Thin intrinsic rete (4) and p type thin layer (5) constitute part table, and its shape is made into device architecture corresponding square or circular, the length of side of its length of side or the little table top of radius ratio or the big 20-100 μ of radius m; Going up preparation at n type thin layer (3) has n type Ohmic electrode (7), and its shape is corresponding with square or circular device to be strip or loop configuration.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120142481U CN202134542U (en) | 2011-05-06 | 2011-05-06 | AlGaN ultraviolet detector with secondary table top wrapped electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120142481U CN202134542U (en) | 2011-05-06 | 2011-05-06 | AlGaN ultraviolet detector with secondary table top wrapped electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202134542U true CN202134542U (en) | 2012-02-01 |
Family
ID=45523304
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201120142481U Expired - Lifetime CN202134542U (en) | 2011-05-06 | 2011-05-06 | AlGaN ultraviolet detector with secondary table top wrapped electrode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202134542U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102201484A (en) * | 2011-05-06 | 2011-09-28 | 中国科学院上海技术物理研究所 | AlGaN ultraviolet detector with secondary mesa wrapping electrode and manufacturing method thereof |
| CN107195701A (en) * | 2017-05-12 | 2017-09-22 | 中国电子科技集团公司第五十研究所 | Platform-type Doped GaAs silicon stops impurity band terahertz detector and preparation method thereof |
| CN107195700A (en) * | 2017-05-12 | 2017-09-22 | 中国电子科技集团公司第五十研究所 | The uniform silicon p-doped of Electric Field Distribution stops impurity band detector and preparation method thereof |
| CN109301007A (en) * | 2018-09-21 | 2019-02-01 | 中国科学院微电子研究所 | Ultraviolet detector and preparation method thereof |
-
2011
- 2011-05-06 CN CN201120142481U patent/CN202134542U/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102201484A (en) * | 2011-05-06 | 2011-09-28 | 中国科学院上海技术物理研究所 | AlGaN ultraviolet detector with secondary mesa wrapping electrode and manufacturing method thereof |
| CN102201484B (en) * | 2011-05-06 | 2013-01-09 | 中国科学院上海技术物理研究所 | AlGaN ultraviolet detector with secondary mesa wrapping electrode and manufacturing method thereof |
| CN107195701A (en) * | 2017-05-12 | 2017-09-22 | 中国电子科技集团公司第五十研究所 | Platform-type Doped GaAs silicon stops impurity band terahertz detector and preparation method thereof |
| CN107195700A (en) * | 2017-05-12 | 2017-09-22 | 中国电子科技集团公司第五十研究所 | The uniform silicon p-doped of Electric Field Distribution stops impurity band detector and preparation method thereof |
| CN107195701B (en) * | 2017-05-12 | 2019-09-17 | 中国电子科技集团公司第五十研究所 | Platform-type Doped GaAs silicon stops impurity band terahertz detector and preparation method thereof |
| CN107195700B (en) * | 2017-05-12 | 2019-09-17 | 中国电子科技集团公司第五十研究所 | The uniform silicon p-doped of field distribution stops impurity band detector and preparation method thereof |
| CN109301007A (en) * | 2018-09-21 | 2019-02-01 | 中国科学院微电子研究所 | Ultraviolet detector and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102201484B (en) | AlGaN ultraviolet detector with secondary mesa wrapping electrode and manufacturing method thereof | |
| CN106847933B (en) | Monolithic integrated ultraviolet-infrared bicolor avalanche photodiode and preparation method thereof | |
| CN109119508B (en) | Back incidence solar blind ultraviolet detector and preparation method thereof | |
| CN101814537B (en) | Gallium nitride based avalanche detector and preparation method thereof | |
| CN106960887B (en) | A kind of aluminum gallium nitride base solar blind ultraviolet detector and preparation method thereof | |
| CN101872798B (en) | Ultraviolet and infrared double-color detector and manufacturing method thereof | |
| CN102214705B (en) | AlGan polarized ultraviolet photoelectric detector and manufacturing method thereof | |
| CN110660882B (en) | Grid-controlled PIN structure GaN ultraviolet detector and preparation method thereof | |
| CN103050498A (en) | Ultraviolet avalanche photo detector having microware or nanowire array structure and manufacturing method thereof | |
| CN106960885B (en) | A kind of PIN structural UV photodetector and preparation method thereof | |
| CN111739960B (en) | Gain type heterojunction ultraviolet photoelectric detector | |
| CN109935655B (en) | AlGaN/SiC bicolor ultraviolet detector | |
| CN202134542U (en) | AlGaN ultraviolet detector with secondary table top wrapped electrode | |
| US8350290B2 (en) | Light-receiving device and manufacturing method for a light-receiving device | |
| CN109285914B (en) | AlGaN-based ultraviolet heterojunction phototransistor detector and preparation method thereof | |
| CN109686809A (en) | A kind of III nitride semiconductor visible light avalanche photodetector and preparation method | |
| CN102361046A (en) | Solar blind ultraviolet detector with AlGaN-based MSM (Metal-Semiconductor-Metal) structure and manufacturing method thereof | |
| Han et al. | Self-powered Au/MgZnO/nanolayered Ga-doped ZnO/In metal–insulator–semiconductor UV detector with high internal gain at deep UV light under low voltage | |
| CN109545883B (en) | Low dark current mesa type avalanche single photon detector and preparation method thereof | |
| CN101777600A (en) | Gallium nitride based ultraviolet-infrared two-colour detector and manufacturing method thereof | |
| CN112490305B (en) | Visible-ultraviolet double-color detector | |
| CN110690323B (en) | Preparation method of ultraviolet photoelectric detector and ultraviolet photoelectric detector | |
| CN114678439B (en) | 2DEG ultraviolet detector with symmetrical interdigital structure and preparation method thereof | |
| Chen et al. | Improved performance of a back-illuminated GaN-based metal-semiconductor-metal ultraviolet photodetector by in-situ modification of one-dimensional ZnO nanorods on its screw dislocations | |
| CN100454585C (en) | Gallium nitride-base ultraviolet detector with PIN structure and production thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20120201 Effective date of abandoning: 20130227 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20120201 Effective date of abandoning: 20130227 |
|
| RGAV | Abandon patent right to avoid regrant |