CN112490305B - Visible-ultraviolet double-color detector - Google Patents

Visible-ultraviolet double-color detector Download PDF

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CN112490305B
CN112490305B CN202011337520.3A CN202011337520A CN112490305B CN 112490305 B CN112490305 B CN 112490305B CN 202011337520 A CN202011337520 A CN 202011337520A CN 112490305 B CN112490305 B CN 112490305B
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topological insulator
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张云霄
李爱民
张远祥
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Tianjin Jinhang Institute of Technical Physics
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Abstract

The invention belongs to the technical field of semiconductor photoelectric detectors, and particularly relates to a visible-ultraviolet double-color detector which adopts a longitudinal integrated structure and comprises an nGaN substrate, an n-type GaN contact layer, a lower metal electrode, an AlGaN matching layer, an AlGaN ultraviolet absorption layer, a two-dimensional boron nitride film barrier layer, a topological insulator visible light absorption layer, an n-type topological insulator film contact layer, an upper metal electrode and a passivation layer. The detectors with two wave bands in the detector have a bottom-up integrated structure, visible and ultraviolet double-color detection can be realized by controlling bias voltage, the false alarm rate is reduced, the size of a device is reduced, and the complexity of a preparation process and a detection system is reduced.

Description

Visible-ultraviolet double-color detector
Technical Field
The invention belongs to the technical field of semiconductor photoelectric detectors, and particularly relates to a visible-ultraviolet double-color detector.
Background
The photoelectric detector has wide application in various fields such as national economy, military and the like. The photoelectric detector based on different wave band detection has important effect on detection in different fields. In visible and near infrared, the photoelectric detector is mainly applied to the aspects of ray measurement and detection, industrial automatic control, photometric measurement and the like; the ultraviolet band is mainly used in military and civil fields such as ultraviolet guidance, ultraviolet alarm, ultraviolet communication, ultraviolet countermeasure, electric power monitoring and the like. The traditional group III nitride material system represented by a gallium nitride/aluminum gallium nitride system is an optimal material for realizing ultraviolet detection, but the detection of visible light and near infrared is difficult to realize, and the photodetectors based on silicon and GaAs are increasingly mature in the aspects of visible light and near infrared, but are difficult to expand towards ultraviolet detection, so that the detection of ultraviolet and visible multiband is difficult to realize by one material system, and a new way for realizing adjustable ultraviolet-visible two-color integrated detection is urgently needed.
Disclosure of Invention
Technical problem to be solved
The technical problem to be solved by the invention is as follows: in view of the above technical shortcomings and needs for improvement, how to provide a visible-ultraviolet dual-color detector capable of multiband response.
(II) technical scheme
In order to solve the above technical problem, the present invention provides a visible-ultraviolet two-color detector, which adopts a longitudinal integrated structure, comprising: the GaN-based LED chip comprises an n-type GaN substrate, an n-type GaN contact layer, a lower metal electrode layer, an n-type AlGaN matching layer, an AlGaN ultraviolet absorption layer, a two-dimensional boron nitride film barrier layer, an n-type topological insulator visible light absorption layer, an n-type topological insulator film contact layer, an upper metal electrode layer and a passivation layer;
the n-type GaN contact layer is extended on the n-type GaN substrate;
the lower metal electrode layer is arranged on the upper surface of the n-type GaN contact layer, is an annular electrode and is provided with an n-type bonding pad;
the n-type AlGaN matching layer is arranged on the n-type GaN contact layer and is positioned in an area within the annular lower metal electrode layer;
the AlGaN ultraviolet absorption layer is extended on the n-type AlGaN matching layer;
the two-dimensional boron nitride film barrier layer is arranged on the AlGaN ultraviolet absorption layer;
the n-type topological insulator visible light absorption layer is arranged on the two-dimensional boron nitride film barrier layer;
the n-type topological insulator thin film contact layer is arranged on the n-type topological insulator visible light absorption layer;
the upper metal electrode layer is arranged on the n-type topological insulator thin film contact layer, is an annular electrode and is provided with an n-type bonding pad;
the passivation layer is arranged on the side walls of the n-type AlGaN matching layer, the AlGaN ultraviolet absorption layer, the two-dimensional boron nitride film barrier layer, the n-type topological insulator visible light absorption layer and the n-type topological insulator film contact layer, and the area, which is not covered with the electrode, of the upper surfaces of the n-type GaN contact layer and the n-type topological insulator film contact layer.
Wherein the thickness of the n-type GaN substrate is 0.3-0.5 mm;
the doping concentration of the n-type GaN contact layer is more than or equal to 1018cm3The thickness is 400nm +/-20 nm;
the n-type AlGaN matching layer has a doping concentration of 1017cm3～1018cm3Within the range, the thickness is 200nm plus or minus 20 nm;
the doping concentration of the AlGaN ultraviolet absorption layer is 1016cm3The thickness is 150nm plus or minus 10 nm;
the doping concentration of the two-dimensional boron nitride film barrier layer is 1016cm3The thickness is 30-50 nm;
the doping concentration of the n-type topological insulator visible light absorption layer is 1016cm3Within.
The doping concentration of the n-type topological insulator thin film contact layer is 1018cm3Above, 10nm to 30nm thick.
The n-type GaN substrate is formed by epitaxial growth of the n-type GaN contact layer, the n-type AlGaN matching layer and the AlGaN ultraviolet absorption layer on the n-type GaN substrate in sequence through MBE technology.
And the diameters of the annular electrodes of the lower metal electrode layer and the upper metal electrode layer are reduced in sequence.
The n-type topological insulator thin film contact layer is a bismuth selenide or bismuth-oxygen-selenium thin film layer, and the thickness of the n-type topological insulator thin film contact layer is 10nm to 60 nm;
the two-dimensional boron nitride film barrier layer and the n-type topological insulator film contact layer are prepared on the n-type AlGaN absorption layer by adopting a film transfer method.
Wherein the energy gap of the AlGaN ultraviolet absorption layer is within the range of 3.4-6.2 eV;
wherein the forbidden band width of the topological insulator thin film layer is in the range of 1.2-3.4 eV;
wherein, lower metal electrode layer, last metal electrode layer are: ti and Au electrodes, wherein the thickness of the lower layer Ti is 20-40nm, and the thickness of the upper layer Au is 60-120 nm.
Wherein the passivation layer is made of silicon oxide, silicon nitride, polyimide or BCB.
(III) advantageous effects
Aiming at the technical defects and improvement requirements, the invention provides a visible-ultraviolet double-color detector capable of multiband response, which integrates an AlGaN material and a topological insulator thin film material, combines the advantages of the AlGaN material in ultraviolet detection with the advantages of the topological insulator thin film material in visible light detection, solves a series of problems of limited response, limited detection waveband and the like of a single-material photodetector, can ensure that a device has the characteristics of high speed, broadband response, low dark current and the like, and can improve the monolithic integration level of the device by adopting a longitudinal vertical device structure.
Compared with the prior art, the AlGaN material adopted by the invention has good light absorption characteristic in an ultraviolet band and high responsivity, and the topological insulator thin film material has good light absorption characteristic in a visible light band and is easy to integrate with other semiconductor materials;
the invention adopts a vertical n-type AlGaN material/BN/n-type topological insulator thin film material heterojunction structure, realizes dual-band detection by adjusting bias voltage applied by an upper electrode and a lower electrode, and adopts an nBn-type single carrier detection structure to mainly rely on minority hole transport to generate photo-generated current, thereby reducing the generation of composite current and surface leakage current.
The heterojunction structure of the vertical n-type AlGaN material/BN/n-type topological insulator thin film material can improve the responsivity of the device, solves the problems of low optical responsivity, narrow waveband range, difficult integration and the like of the optical detector based on a single material system, and has great potential for realizing a wide-spectrum detector.
Drawings
Fig. 1 is a cross-sectional view of a visible-ultraviolet two-color detector according to an embodiment of the present invention.
Fig. 2 is a top view of a visible-ultraviolet two-color detector according to an embodiment of the present invention.
Detailed Description
In order to make the objects, contents, and advantages of the present invention clearer, the following detailed description of the embodiments of the present invention will be made in conjunction with the accompanying drawings and examples.
In recent years, two-dimensional layered materials attract great attention, and particularly, free-hanging bonds on the surfaces of the two-dimensional materials enable the two-dimensional materials to be combined with other semiconductors, so that the limitation of crystal lattices is overcome, and an ideal design platform is provided for the realization of a multi-band detector. Particularly, the bismuth oxide topological insulator is a brand new two-dimensional semiconductor chip material (bismuth selenide and bismuth selenide) which has the characteristics of ultrahigh electron mobility, proper band gap, stable environment and batch preparation, the energy gap is adjustable in the range of 0.91-2.3eV, and the bismuth oxide topological insulator has excellent performance in the aspect of visible light detection. Therefore, high-performance adjustable ultraviolet-visible double-color integrated detection can be realized by constructing the bismuth topological insulator film and the GaN heterojunction device.
In order to solve the above technical problem, the present invention provides a visible-ultraviolet two-color detector, as shown in fig. 1, the visible-ultraviolet two-color detector adopts a longitudinal integrated structure, including: the GaN-based LED chip comprises an n-type GaN substrate, an n-type GaN contact layer, a lower metal electrode layer, an n-type AlGaN matching layer, an AlGaN ultraviolet absorption layer, a two-dimensional boron nitride film barrier layer, an n-type topological insulator visible light absorption layer, an n-type topological insulator film contact layer, an upper metal electrode layer and a passivation layer;
the n-type GaN contact layer is extended on the n-type GaN substrate;
the lower metal electrode layer is arranged on the upper surface of the n-type GaN contact layer, is an annular electrode and is provided with an n-type bonding pad;
the n-type AlGaN matching layer is arranged on the n-type GaN contact layer and is positioned in an area within the annular lower metal electrode layer;
the AlGaN ultraviolet absorption layer is extended on the n-type AlGaN matching layer;
the two-dimensional boron nitride film barrier layer is arranged on the AlGaN ultraviolet absorption layer;
the n-type topological insulator visible light absorption layer is arranged on the two-dimensional boron nitride film barrier layer;
the n-type topological insulator thin film contact layer is arranged on the n-type topological insulator visible light absorption layer;
the upper metal electrode layer is arranged on the n-type topological insulator thin film contact layer, is an annular electrode and is provided with an n-type bonding pad;
the passivation layer is arranged on the side walls of the n-type AlGaN matching layer, the AlGaN ultraviolet absorption layer, the two-dimensional boron nitride film barrier layer, the n-type topological insulator visible light absorption layer and the n-type topological insulator film contact layer, and the area, which is not covered with the electrode, of the upper surfaces of the n-type GaN contact layer and the n-type topological insulator film contact layer.
Wherein the thickness of the n-type GaN substrate is 0.3-0.5 mm;
the doping concentration of the n-type GaN contact layer is more than or equal to 1018cm3The thickness is 400nm +/-20 nm;
the n-type AlGaN matching layer has a doping concentration of 1017cm3～1018cm3Within the range, the thickness is 200nm plus or minus 20 nm;
the doping concentration of the AlGaN ultraviolet absorption layer is 1016cm3The thickness is 150nm plus or minus 10 nm;
the doping concentration of the two-dimensional boron nitride film barrier layer is 1016cm3The thickness is 30-50 nm;
the doping concentration of the n-type topological insulator visible light absorption layer is 1016cm3Within.
The doping concentration of the n-type topological insulator thin film contact layer is 1018cm3Above, 10nm to 30nm thick.
The n-type GaN substrate is formed by epitaxial growth of the n-type GaN contact layer, the n-type AlGaN matching layer and the AlGaN ultraviolet absorption layer on the n-type GaN substrate in sequence through MBE technology.
And the diameters of the annular electrodes of the lower metal electrode layer and the upper metal electrode layer are reduced in sequence.
The n-type topological insulator thin film contact layer is a bismuth selenide or bismuth-oxygen-selenium thin film layer, and the thickness of the n-type topological insulator thin film contact layer is 10nm to 60 nm;
the two-dimensional boron nitride film barrier layer and the n-type topological insulator film contact layer are prepared on the n-type AlGaN absorption layer by adopting a film transfer method.
Wherein the energy gap of the AlGaN ultraviolet absorption layer is within the range of 3.4-6.2 eV;
wherein the forbidden band width of the topological insulator thin film layer is in the range of 1.2-3.4 eV;
wherein, lower metal electrode layer, last metal electrode layer are: ti and Au electrodes, wherein the thickness of the lower layer Ti is 20-40nm, and the thickness of the upper layer Au is 60-120 nm.
Wherein the passivation layer is made of silicon oxide, silicon nitride, polyimide or BCB.
Example 1
Referring to fig. 1, the present embodiment provides a visible-ultraviolet two-color detector, which sequentially includes, from bottom to top, an n-type GaN substrate 1, an n-type GaN contact layer 2, a lower metal electrode layer 3, an n-type AlGaN matching layer 4, an AlGaN ultraviolet absorption layer 5, a two-dimensional boron nitride thin film barrier layer 6, a topological insulator visible light absorption layer 7, an n-type topological insulator thin film contact layer 8, an upper metal electrode layer 10, and a passivation layer 9.
Heterojunction is formed among the n-type GaN substrate 1, the n-type GaN contact layer 2, the lower metal electrode layer 3, the n-type AlGaN matching layer 4, the AlGaN ultraviolet absorption layer 5, the two-dimensional boron nitride film barrier layer 6, the topological insulator visible light absorption layer 7 and the n-type topological insulator film contact layer 8, and the upper metal electrode layer and the lower metal electrode layer are used as two output stages to form the nBn-type heterojunction bicolor detector structure.
The thickness of the n-type GaN substrate 1 is 0.3-0.5 mm;
the doping concentration of the n-type GaN contact layer 2 is more than or equal to 1018cm3The thickness is 400nm +/-20 nm, and the film is extended on the substrate;
the lower metal electrode layer 3 is arranged on the upper surface of the n-type GaN contact layer, is an annular electrode and is provided with an n-type bonding pad 3-1, and the basic structure is shown in FIG. 2;
the n-type AlGaN matching layer 4 has a doping concentration of 1017cm3～1018cm3Within the range, the thickness is 200nm plus or minus 20nm, the n-type GaN contact layer 2 is arranged on the n-type GaN contact layer, and the n-type GaN contact layer is positioned in the inner area of the annular electrode;
the AlGaN ultraviolet absorption layer 5 has a doping concentration of 1016cm3The thickness is 150nm +/-10 nm, and the AlGaN/GaN film is extended on the n-type AlGaN matching layer 4;
the two-dimensional boron nitride film barrier layer 6 has a doping concentration of 1016cm3The AlGaN ultraviolet absorption layer is arranged on the AlGaN ultraviolet absorption layer 5, and the thickness of the AlGaN ultraviolet absorption layer is 30-50 nm;
the n-type topological insulator visible light absorption layer 7 has a doping concentration of 1016cm3The two-dimensional boron nitride film is arranged on the two-dimensional boron nitride film barrier layer 6;
the n-type topological insulator thin film contact layer 8 has the doping concentration of 1018cm3Above, 10nm to 30nm in thickness, disposed on the n-type topological insulator visible light absorbing layer 7;
the upper metal electrode layer 10 is arranged on the n-type topological insulator thin film contact layer 8, is an annular electrode and is provided with an n-type bonding pad 10-1, and the basic structure is shown in figure 2;
the passivation layer 9 is arranged on the side walls of the AlGaN matching layer 4, the AlGaN ultraviolet absorption layer 5, the two-dimensional boron nitride film barrier layer 6, the topological insulator visible light absorption layer 7, the n-type topological insulator film contact layer 8 and the like, and in the areas, which are not covered with the electrodes (3 and 10), of the upper surfaces of the n-type GaN contact layer 2 and the n-type topological insulator film contact layer 8;
the diameters of the annular electrodes of the lower metal electrode layer 3 and the upper metal electrode layer 10 are reduced in sequence;
the n-type GaN contact layer 2, the n-type AlGaN matching layer 4 and the AlGaN ultraviolet absorption layer 5 are formed by epitaxial growth on the n-type GaN substrate 1 in sequence through MBE technology;
the topological insulator thin film layer 7 is a bismuth selenide or bismuth-oxygen-selenium thin film layer, and the thickness is 10nm to 60 nm;
the two-dimensional boron nitride film 6 and the topological insulator film layer 7 are prepared on the n-type AlGaN absorption layer 5 by adopting a common film transfer method;
the forbidden band width of the AlGaN absorption layer 5 is within the range of 3.4-6.2 eV;
the energy gap of the flapping insulator layer 7 is in the range of 1.2-3.4 eV;
the lower metal electrode layer 3 and the upper metal electrode layer 10 are: ti and Au electrodes, wherein the thickness of the lower layer Ti is 20-40nm, and the thickness of the upper layer Au is 60-120 nm;
the passivation layer material 9 is silicon oxide, silicon nitride, polyimide, BCB, etc.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.

Claims (10)

1. A visible-ultraviolet dual-color detector, characterized in that the visible-ultraviolet dual-color detector adopts a longitudinal integrated structure, comprising: the GaN-based LED chip comprises an n-type GaN substrate, an n-type GaN contact layer, a lower metal electrode layer, an n-type AlGaN matching layer, an AlGaN ultraviolet absorption layer, a two-dimensional boron nitride film barrier layer, an n-type topological insulator visible light absorption layer, an n-type topological insulator film contact layer, an upper metal electrode layer and a passivation layer;
the n-type GaN contact layer is extended on the n-type GaN substrate;
the lower metal electrode layer is arranged on the upper surface of the n-type GaN contact layer, is an annular electrode and is provided with an n-type bonding pad;
the n-type AlGaN matching layer is arranged on the n-type GaN contact layer and is positioned in an area within the annular lower metal electrode layer;
the AlGaN ultraviolet absorption layer is extended on the n-type AlGaN matching layer;
the two-dimensional boron nitride film barrier layer is arranged on the AlGaN ultraviolet absorption layer;
the n-type topological insulator visible light absorption layer is arranged on the two-dimensional boron nitride film barrier layer;
the n-type topological insulator thin film contact layer is arranged on the n-type topological insulator visible light absorption layer;
the upper metal electrode layer is arranged on the n-type topological insulator thin film contact layer, is an annular electrode and is provided with an n-type bonding pad;
the passivation layer is arranged on the side walls of the n-type AlGaN matching layer, the AlGaN ultraviolet absorption layer, the two-dimensional boron nitride film barrier layer, the n-type topological insulator visible light absorption layer and the n-type topological insulator film contact layer, and the region, which is not covered with the electrode, of the upper surfaces of the n-type GaN contact layer and the n-type topological insulator film contact layer;
the n-type topological insulator thin film contact layer is a bismuth selenide or bismuth-oxygen-selenium thin film layer.
2. The visible-ultraviolet dual-color detector of claim 1, wherein the n-type GaN substrate has a thickness of 0.3-0.5 mm;
the doping concentration of the n-type GaN contact layer is more than or equal to 1018cm3The thickness is 400nm +/-20 nm;
the n-type AlGaN matching layer has a doping concentration of 1017cm3～1018cm3Within the range, the thickness is 200nm plus or minus 20 nm;
the doping concentration of the AlGaN ultraviolet absorption layer is 1016cm3The thickness is 150nm plus or minus 10 nm;
the doping concentration of the two-dimensional boron nitride film barrier layer is 1016cm3The thickness is 30-50 nm;
the doping concentration of the n-type topological insulator visible light absorption layer is 1016cm3The content of the compound is less than the content of the compound;
the doping concentration of the n-type topological insulator thin film contact layer is 1018cm3Above, 10nm to 30nm thick.
3. The visible-ultraviolet dual-color detector as claimed in claim 1, wherein the n-type GaN contact layer, the n-type AlGaN matching layer and the AlGaN ultraviolet absorption layer are sequentially epitaxially grown on the n-type GaN substrate by MBE technology.
4. The visible-ultraviolet dual-color detector of claim 1, wherein the diameters of the annular electrodes of the lower metal electrode layer and the upper metal electrode layer are sequentially reduced.
5. The visible-ultraviolet dual color detector of claim 1, wherein the n-type topological insulator thin film contact layer is 10nm to 60nm thick.
6. The visible-ultraviolet dual-color detector as claimed in claim 1, wherein the two-dimensional boron nitride film barrier layer and the n-type topological insulator film contact layer are prepared on the n-type AlGaN absorption layer by a film transfer method.
7. The visible-ultraviolet dual color detector of claim 1, wherein the AlGaN ultraviolet absorption layer has a forbidden band width in a range of 3.4 to 6.2 eV.
8. The visible-ultraviolet dual color detector of claim 1, wherein the topological insulator thin film layer has a forbidden bandwidth in the range of 1.2-3.4 eV.
9. The visible-ultraviolet dual-color detector of claim 1, wherein the lower metal electrode layer and the upper metal electrode layer are: ti and Au electrodes, wherein the thickness of the lower layer Ti is 20-40nm, and the thickness of the upper layer Au is 60-120 nm.
10. The visible-ultraviolet dual-color detector of claim 1, wherein the passivation layer material is silicon oxide, silicon nitride, polyimide, or BCB.
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