CN213242573U - Medium-short wave double-color infrared detector based on Sb compound - Google Patents

Medium-short wave double-color infrared detector based on Sb compound Download PDF

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CN213242573U
CN213242573U CN202022474611.3U CN202022474611U CN213242573U CN 213242573 U CN213242573 U CN 213242573U CN 202022474611 U CN202022474611 U CN 202022474611U CN 213242573 U CN213242573 U CN 213242573U
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马晓乐
郭杰
郝瑞亭
艾尔肯·阿不都瓦衣提
魏国帅
孙帅辉
方水柳
李晓明
王云鹏
刘慧敏
王国伟
徐应强
牛智川
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Yunnan University YNU
Yunnan Normal University
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Abstract

The utility model discloses a double-colored infrared detector of medium and short wave based on Sb thing, this detector include the GaSb substrate and deposit the epitaxial structure on the GaSb substrate, and the epitaxial structure is from supreme including down: the detector comprises a Te doped N-type GaSb buffer layer, a medium wave infrared InAs/GaSb superlattice N-type layer, a medium wave infrared InAs/GaSb superlattice unintended doped absorption layer, a medium wave infrared InAs/GaSb superlattice P-type layer, a short wave infrared GaSb body material unintended doped absorption layer and a short wave infrared GaSb body material N-type layer, wherein a NIPPIN type back-to-back double diode structure is adopted, different absorption channels can be in working modes through bias modulation, so that the short wave infrared and the medium wave infrared are respectively detected, the detector has two absorption channels, the interference resistance and the detection effect are improved, the absorption coefficient can be improved by adopting the two absorption layers with the thickness of more than or equal to 1.5 mu m, the quantum efficiency and the detection rate are improved, the structure is simple, the preparation process is simple, and the repeatability is strong.

Description

Medium-short wave double-color infrared detector based on Sb compound
Technical Field
The utility model relates to an infrared detector, especially a medium short wave double-colored infrared detector based on Sb thing.
Background
Infrared detection belongs to a passive detection technology and has extremely important application in the military and civil fields. The double-color infrared detection can acquire information of different wave bands of a target, improve the anti-interference performance and the recognition capability and reduce the false alarm rate. Under normal conditions, the wavelength of the radiation of most objects is in the range of short wave infrared (1-3 μm) and medium wave infrared (3-5 μm), so that the medium-short two-color infrared detector is widely applied to the fields of infrared early warning, missile guidance, medical imaging and the like.
Currently, the materials used for medium wave infrared absorption are mainly InSb, mercury cadmium telluride (HgCdTe), multiple quantum wells (AlGaAs/GaAs) and class II superlattices (InAs/GaSb). InSb has high quantum efficiency, but has a lattice constant of
Figure BDA0002754558250000011
Lattice mismatch with the most common substrate materials is not suitable for a two-color detector; hg element in mercury cadmium telluride (HgCdTe) is very unstable, is very easy to volatilize to cause defects and cause poor material uniformity, and the element is toxic and high in cost; the multiple quantum well material cannot absorb normal incident light due to the selection of the transition matrix elements, and the quantum efficiency is low; the InAs/GaSb superlattice energy band is adjustable, the effective mass of electrons can inhibit Auger recombination, the large area uniformity is good, and the quantum efficiency is high by absorbing normal incident light.
The materials for short-wave infrared absorption are mainly InGaAs, InGaAsSb and AlGaAsSb ternary or quaternary compound semiconductors at present, but all of the materials have the problems of substrate lattice mismatch, poor repeatability and high cost due to difficult component control, and are not beneficial to large-scale production. The GaSb semiconductor band gap width is 0.75eV, the corresponding cut-off wavelength is not 1.65 μm, the GaSb semiconductor band gap can be used for absorbing and detecting short wave infrared, is perfectly matched with a GaSb substrate and an InAs/GaSb superlattice lattice, does not need complex component regulation and control, and has high material stability, wide growth temperature range and strong repeatability.
In the infrared detector with the PMP structure, the M-type InAs/GaSb/AlSb/GaSb superlattice can reduce dark current and improve quantum efficiency theoretically, but the improvement effect is limited, and the introduction of AlSb components increases the complexity of component adjustment, reduces repeatability and improves the cost.
Disclosure of Invention
In order to overcome the defects of the prior art, the utility model provides a medium-short wave double-color infrared detector based on Sb compound, which has high quantum efficiency, long carrier service life and no need of complex component adjustment in the growth process, has strong repeatability and low cost and is beneficial to large-scale production.
The utility model provides a technical scheme that its technical problem adopted is:
the utility model provides a two-tone infrared detector of medium-short wave based on Sb thing, this detector includes the GaSb substrate and deposits the epitaxial structure on the GaSb substrate, the epitaxial structure includes from bottom to top: the epitaxial structure comprises a Te doped N-type GaSb buffer layer, a medium wave infrared InAs/GaSb superlattice N-type layer, a medium wave infrared InAs/GaSb superlattice unintended doped absorption layer, a medium wave infrared InAs/GaSb superlattice P-type layer, a short wave infrared GaSb body material unintended doped absorption layer and a short wave infrared GaSb body material N-type layer, wherein a step is arranged on the side surface of the epitaxial structure and extends to the medium wave infrared InAs/GaSb superlattice N-type layer; an annular metal upper electrode is arranged on the upper table top of the step, the metal upper electrode is in contact with the N-type layer of the short-wave infrared GaSb material, and a circular hole in the center of the annular metal upper electrode is a light through hole; the outer side wall of the step is sequentially provided with a vulcanized layer and SiO from inside to outside2A passivation layer, wherein the metal lower electrode, the metal upper electrode and the light through hole are free of the sulfide layer and SiO2And a passivation layer covers the substrate.
The SiO2The thickness of the passivation layer was 200 nm.
The metal lower electrode and the metal upper electrode sequentially comprise a Ti layer, a Pt layer and an Au layer from bottom to top.
The Te doped N-type GaSb buffer layer is doped with gallium telluride (GaTe) with the doping concentration of 1.54 multiplied by 1018cm-3The thickness is 800 nm.
The medium-wave infrared InAs/GaSb superlattice N-type layer has a growth period of 8ML InAs/8ML GaSb, a growth period of 4.86nm and a total of 103 weeksThe period is 500nm, wherein the InAs layer is doped with silicon Si with the doping concentration of 2.8 multiplied by 1018cm-3。
The medium-wave infrared InAs/GaSb superlattice unintentionally doped absorption layer has the growth period of 8ML InAs/8ML GaSb, the thickness of 4.86nm in each growth period, the total 309 periods are 1500nm, and the concentration of undoped lower current carriers is 1015cm-3-1016cm-3。
The medium-wave infrared InAs/GaSb superlattice P-type layer has a growth period of 8ML InAs/8ML GaSb, a growth period thickness of 4.86nm and a total period of 103 of 500nm, wherein the GaSb layer is doped with beryllium Be and has a doping concentration of 2.15 multiplied by 1018cm-3。
The short-wave infrared GaSb material P-type layer is doped with beryllium Be, and the doping concentration is 2.15 multiplied by 1018cm-3The thickness is 500 nm.
The concentration of the carrier under the condition that the short wave infrared GaSb bulk material is not doped with the impurity of the unintentional doped absorption layer is 1015cm-3-1016cm-3And the thickness is 1500 nm.
The N-type layer of the short-wave infrared GaSb material is doped with gallium telluride (GaTe) with the doping concentration of 1.54 multiplied by 1018cm-3And the thickness is 500 nm.
The utility model has the advantages that: by adopting the NIPPIN type back-to-back double-diode structure, different absorption channels can be in a working mode through bias modulation, so that the respective detection of short wave infrared and medium wave infrared is realized, the two absorption channels are provided, the anti-interference performance and the detection effect are improved, the absorption coefficient can be improved by adopting two absorption layers with the thickness of more than or equal to 1.5 mu m, the quantum efficiency and the detection rate are improved, and the structure is simple, the preparation process is simple, and the repeatability is strong.
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The present invention will be further explained with reference to the drawings and examples.
Fig. 1 is a schematic structural diagram of the present invention;
fig. 2 is a top view of the structure of the present invention.
Detailed Description
Medium-short wave based on Sb compoundDouble-colored infrared detector, this detector include GaSb substrate 1 and deposit the epitaxial structure on GaSb substrate 1, the epitaxial structure includes from supreme down: the structure comprises a Te doped N-type GaSb buffer layer 2, a medium wave infrared InAs/GaSb superlattice N-type layer 3, a medium wave infrared InAs/GaSb superlattice unintended doped absorption layer 4, a medium wave infrared InAs/GaSb superlattice P-type layer 5, a short wave infrared GaSb body material P-type layer 6, a short wave infrared GaSb body material unintended doped absorption layer 7, a short wave infrared GaSb body material N-type layer 8, wherein a step is arranged on the side face of the epitaxial structure and extends to the medium wave infrared InAs/GaSb superlattice N-type layer 3, the upper surface of the Te doped N-type GaSb buffer layer 2 is a step lower table, the upper surface of the short wave infrared GaSb body material N-type layer 8 is a step upper table, a ring-shaped metal lower electrode 11 is arranged on the step lower table, and the metal lower electrode 11 is in contact with the Te doped N-type GaSb buffer layer 2; an annular metal upper electrode 12 is arranged on the upper table top of the step, the metal upper electrode 12 is in contact with the short-wave infrared GaSb material N-type layer 8, and a circular hole in the center of the annular metal upper electrode 12 is a light through hole 13; the outer side wall of the step is sequentially provided with a vulcanized layer 9 and SiO from inside to outside2A passivation layer 10, the metal lower electrode 11, the metal upper electrode 12 and the light-passing hole 13 are free of the sulfide layer 9 and SiO2A passivation layer 10 covers.
The metal lower electrode 11 and the metal upper electrode 12 sequentially comprise a Ti layer, a Pt layer and an Au layer from bottom to top.
The GaSb substrate 1 is an N-type GaSb substrate in the (001) direction.
The Te doped N-type GaSb buffer layer 2 is doped by gallium telluride (GaTe) with the doping concentration of 1.54 multiplied by 1018cm-3The thickness is 800 nm.
The medium-wave infrared InAs/GaSb superlattice N-type layer 3 has the growth period of 8ML InAs/8ML GaSb, the thickness of 4.86nm in each growth period and the total period of 103 being 500nm, wherein the InAs layer is doped with silicon Si, and the doping concentration is 2.8 multiplied by 1018cm-3。
The medium-wave infrared InAs/GaSb superlattice unintentionally doped absorption layer 4 has the growth period of 8ML InAs/8ML GaSb, the thickness of 4.86nm in each growth period, the total 309 periods are 1500nm, and the concentration of undoped lower current carriersIs 1015cm-3-1016cm-3。
The medium-wave infrared InAs/GaSb superlattice P-type layer 5 has the growth period of 8ML InAs/8ML GaSb, the thickness of 4.86nm in each growth period and the total period of 103 being 500nm, wherein the GaSb layer is doped with beryllium Be, and the doping concentration is 2.15 multiplied by 1018cm-3。
The short-wave infrared GaSb material P-type layer 6 is doped with beryllium Be, and the doping concentration is 2.15 multiplied by 1018cm-3The thickness is 500 nm.
The concentration of the carrier under the condition that the short wave infrared GaSb bulk material is not doped with the unintentional doping absorption layer 7 is 1015cm-3-1016cm-3And the thickness is 1500 nm.
The N-type layer 8 of the short-wave infrared GaSb material is doped with gallium telluride (GaTe) with the doping concentration of 1.54 multiplied by 1018cm-3And the thickness is 500 nm.
The epitaxial growth of the epitaxial structure uses a molecular beam epitaxy system to control the growth precision.
The metal lower electrode 11 and the metal upper electrode 12 sequentially comprise a Ti layer, a Pt layer and an Au layer from bottom to top, the thickness of the Ti layer is 50nm, the thickness of the Pt layer is 50nm, the thickness of the Au layer is 300nm, the Ti layer and a material can form good ohmic contact at the lowest layer, the Au layer is adopted on the most surface for good conductivity, and the Au layer is used for easy routing in the subsequent process and keeping good adhesiveness and firmness.
The medium wave infrared InAs/GaSb superlattice N-type layer 3, the medium wave infrared InAs/GaSb superlattice unintentionally doped absorption layer 4 and the medium wave infrared InAs/GaSb superlattice P-type layer 5 form a medium wave absorption layer, the InAs/GaSb superlattice diode is adopted to respond to medium wave infrared (3-5 mu m), and the regulation and control of absorption wavelength can be realized through the regulation of the period thickness, so that the medium wave infrared and even long wave infrared in a wide range can be absorbed, the effective quality of electrons is large, the service life of carriers is long, and the quantum efficiency is high.
The InAs/GaSb superlattice theoretically can cover short wave to long wave infrared bands, but short wave cut-off wavelength is longer, long wave component adjustment complex influence factors are multiple and have low repeatability, the most mature application band is a medium wave infrared band of 3-5 mu M, the M-type InAs/GaSb/AlSb/GaSb superlattice with a PMP structure can reduce dark current and improve quantum efficiency theoretically, but the improvement effect is limited, AlSb components are introduced to increase the complexity of component adjustment and reduce repeatability, the cost is improved, and the traditional PIN-type InAs/GaSb superlattice has simpler component adjustment, strong repeatability and low cost on the premise of achieving the same detection effect, the dark current can be reduced through proper doping adjustment, the quantum efficiency is improved, and crosstalk is reduced.
The short-wave infrared GaSb material P-type layer 6, the short-wave infrared GaSb material unintended doped absorption layer 7 and the short-wave infrared GaSb material N-type layer 8 form a short-wave absorption layer, the short-wave infrared (0.9-1.7 mu m) response of the GaSb material is adopted, and the short-wave infrared GaSb material N-type layer is matched with a GaSb substrate and an InAs/GaSb superlattice lattice, so that the complex component regulation and control are omitted, the growth temperature range is wide, the growth process is simple and has strong repeatability, the industrial production is facilitated, and the bulk material adopts a carrier working mode of interband transition, so that the quantum efficiency is high, and the detection rate is high.
The used GaSb material has high quantum efficiency by adopting an interband transition working mode, the band gap of GaSb is larger than 0.75eV, the corresponding cut-off wavelength is 1.65 mu m, and compared with an InAs/GaSb superlattice, the cut-off wavelength of the InAs/GaSb superlattice is adjusted to be 2 mu m by the periodic thickness, the cut-off wavelength of the GaSb material is shorter, higher contrast can be provided in a medium-short bicolor infrared detector, the growth temperature range of the GaSb is wide, complex component adjustment is not needed, and compared with an InGaAsSb material used for a short-wave material, the GaSb material has stronger growth controllability, strong repeatability and lower cost.
In the prior art, when designing a middle-short double-color infrared detector with a similar PIN structure, a short wave channel uses an InGaAsSb body material, a middle wave channel uses an InAsSb body material, and a GaSb buffer layer is arranged to separate two wave band devices, so that the quality of the material is improved, the two materials are respectively used as components of a short wave absorption layer and a middle wave absorption layer, the lattice constants of the two materials are different, although the two materials can be theoretically adjusted to be matched with the lattice of GaSb but are not suitable to be controlled, the deviation is large, therefore, the GaSb buffer layer is required to be arranged between the two wave band devices to make up the lattice constant difference between the two devices, the epitaxial quality of the material is improved, the GaSb buffer layer is used as a barrier layer between the two channels: firstly, the material lattice matching with the two channels, secondly, the band gap width is larger than the band gap of the material of the two channels, so that the crosstalk of carrier transportation between the two channels can be reduced, the dark current is reduced, and the detection performance of the detector is improved.
The utility model adopts the NIPPIN type back-to-back double diode structure, the middle wave channel adopts InAs/GaSb superlattice, the short wave channel adopts GaSb material, one of the two materials is lattice matched, therefore, no buffer layer between two wave band devices is needed, and no complex component adjustment is needed, the short wave channel of the invention uses GaSb material, the band gap is 0.75eV, because the band gap is larger, the material which is lattice matched with the short wave channel and has larger band gap is seldom used as barrier layer, therefore, no barrier layer is adopted between the two channels of the utility model, but the barrier height difference between the P area and the N area is increased by increasing the doping concentration to reduce the crosstalk between the two channels, the dark current is reduced, through theoretical simulation and experimental verification, the detection performance of low crosstalk, low dark current, high quantum efficiency and high detectivity can be realized by changing the doping mode without the barrier layer, compared with the prior art, the preparation method has the advantages of simple preparation process, strong repeatability and lower cost under the condition of realizing the same detection effect.
The above embodiments are not intended to limit the scope of the present invention, and those skilled in the art will not depart from the present invention as it relates to the whole concept of the present invention, and the equal modification and change will still belong to the scope of the present invention.

Claims (10)

1. The utility model provides a short-wave double-colored infrared detector in intermediate wave based on Sb compound, characterized in that, this detector includes GaSb substrate (1) and deposits the epitaxial structure on GaSb substrate (1), epitaxial structure includes from bottom to top: a Te doped N-type GaSb buffer layer (2), a medium wave infrared InAs/GaSb superlattice N-type layer (3), a medium wave infrared InAs/GaSb superlattice unintended doped absorption layer (4), a medium wave infrared InAs/GaSb superlattice P-type layer (5), a short wave infrared GaSb body material P-type layer (6)The epitaxial structure comprises a wave infrared GaSb body material unintended doped absorption layer (7), a short wave infrared GaSb body material N-type layer (8), a step is arranged on the side face of the epitaxial structure, the step is deep to a medium wave infrared InAs/GaSb superlattice N-type layer (3), the upper surface of a Te doped N-type GaSb buffer layer (2) is a step lower table, the upper surface of the short wave infrared GaSb body material N-type layer (8) is the step upper table, a ring-shaped metal lower electrode (11) is arranged on the step lower table, and the metal lower electrode (11) is in contact with the Te doped N-type GaSb buffer layer (2); an annular metal upper electrode (12) is arranged on the upper table top of the step, the metal upper electrode (12) is in contact with the short-wave infrared GaSb material N-type layer (8), and a circular hole in the center of the annular metal upper electrode (12) is a light through hole (13); the outer side wall of the step is sequentially provided with a vulcanized layer (9) and SiO from inside to outside2A passivation layer (10), the metal lower electrode (11), the metal upper electrode (12) and the light through hole (13) being free of the sulfide layer (9) and SiO2A passivation layer (10) covers.
2. The Sb-compound-based medium short wave bicolor infrared detector according to claim 1, wherein the metal lower electrode (11) and the metal upper electrode (12) comprise a Ti layer, a Pt layer and an Au layer in this order from bottom to top.
3. The Sb-based medium short wave two-color infrared detector according to claim 1, wherein the GaSb substrate (1) uses an N-type GaSb substrate in the (001) direction.
4. Sb-compound-based medium-short wave bicolor infrared detector according to claim 1, characterised in that the Te-doped N-type GaSb buffer layer (2) is doped with gallium telluride (GaTe) in a concentration of 1.54 x 1018cm-3The thickness is 800 nm.
5. Sb-compound-based medium short wave bicolor infrared detector according to claim 1, characterised in that said medium wave infrared InAs/GaSb superlattice N-type layer (3)Each growth cycle is 8ML InAs/8ML GaSb, the thickness of each growth cycle is 4.86nm, the total growth cycle is 103 cycles of 500nm, wherein the InAs layer is doped with silicon Si, and the doping concentration is 2.8 multiplied by 1018cm-3。
6. The Sb compound-based medium short wave bicolor infrared detector according to claim 1, wherein the medium wave infrared InAs/GaSb superlattice unintentionally doped absorption layer (4) has a thickness of 4.86nm per growth cycle, a total of 309 cycles of 1500nm, and an undoped lower carrier concentration of 1015cm-3-1016cm-3。
7. The Sb-based medium short wavelength dual color infrared detector according to claim 1, wherein the medium wavelength infrared InAs/GaSb superlattice P-type layer (5) has a thickness of 4.86nm per growth cycle and a total period of 103 of 500nm at 8ML InAs/8ML GaSb per growth cycle, and wherein the GaSb layer is doped with beryllium Be at a doping concentration of 2.15 x 1018cm-3。
8. Medium short wave dual color infrared detector based on Sb-compounds according to claim 1 characterized in that the short wave infrared GaSb bulk material P-type layer (6) is doped with beryllium Be with a doping concentration of 2.15 x 1018cm-3The thickness is 500 nm.
9. Sb-hydride based mid-short wavelength two-color infrared detector according to claim 1, characterised in that the short wavelength infrared GaSb bulk material is not deliberately doped with an absorber layer (7) having a carrier concentration of 1015cm-3-1016cm-3And the thickness is 1500 nm.
10. Sb-compound-based medium short wave bicolor infrared detector according to claim 1, characterised in that the N-type layer (8) of short wave infrared GaSb body material is doped with gallium telluride (GaTe) in a concentration of 1.54 x 1018cm-3And the thickness is 500 nm.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113972296A (en) * 2021-10-25 2022-01-25 中国科学院半导体研究所 Infrared detector and preparation method thereof
CN115036378A (en) * 2022-04-28 2022-09-09 南昌大学 AlInGaN-based single pn junction multicolor detector and signal detection method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113972296A (en) * 2021-10-25 2022-01-25 中国科学院半导体研究所 Infrared detector and preparation method thereof
CN115036378A (en) * 2022-04-28 2022-09-09 南昌大学 AlInGaN-based single pn junction multicolor detector and signal detection method
CN115036378B (en) * 2022-04-28 2023-11-28 南昌大学 AlInGaN-based single pn junction polychromatic detector and signal detection method

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